CN117580390A - Display device and method of manufacturing the same - Google Patents
Display device and method of manufacturing the same Download PDFInfo
- Publication number
- CN117580390A CN117580390A CN202211266668.1A CN202211266668A CN117580390A CN 117580390 A CN117580390 A CN 117580390A CN 202211266668 A CN202211266668 A CN 202211266668A CN 117580390 A CN117580390 A CN 117580390A
- Authority
- CN
- China
- Prior art keywords
- layer
- stack structure
- energy level
- charge
- emitting stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 claims description 52
- 238000004770 highest occupied molecular orbital Methods 0.000 claims description 51
- 125000000524 functional group Chemical group 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 230000005525 hole transport Effects 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 13
- 125000006615 aromatic heterocyclic group Chemical group 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 238000004020 luminiscence type Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 303
- -1 anilino, diphenylamino Chemical group 0.000 description 23
- 239000000463 material Substances 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000000259 cinnolinyl group Chemical group N1=NC(=CC2=CC=CC=C12)* 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004414 alkyl thio group Chemical group 0.000 description 2
- 125000000304 alkynyl group Chemical group 0.000 description 2
- 125000005013 aryl ether group Chemical group 0.000 description 2
- 150000004832 aryl thioethers Chemical class 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 2
- 125000004618 benzofuryl group Chemical group O1C(=CC2=C1C=CC=C2)* 0.000 description 2
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 2
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 2
- 125000004541 benzoxazolyl group Chemical group O1C(=NC2=C1C=CC=C2)* 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 2
- 125000004623 carbolinyl group Chemical group 0.000 description 2
- 125000000392 cycloalkenyl group Chemical group 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 125000004987 dibenzofuryl group Chemical group C1(=CC=CC=2OC3=C(C21)C=CC=C3)* 0.000 description 2
- 125000004988 dibenzothienyl group Chemical group C1(=CC=CC=2SC3=C(C21)C=CC=C3)* 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000002541 furyl group Chemical group 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 125000001072 heteroaryl group Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 125000004857 imidazopyridinyl group Chemical group N1C(=NC2=C1C=CC=N2)* 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 125000001041 indolyl group Chemical group 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 125000004593 naphthyridinyl group Chemical group N1=C(C=CC2=CC=CN=C12)* 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 125000003373 pyrazinyl group Chemical group 0.000 description 2
- 125000002098 pyridazinyl group Chemical group 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 125000000714 pyrimidinyl group Chemical group 0.000 description 2
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 2
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 2
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 125000004306 triazinyl group Chemical group 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- HLOMXSGLLYIWSP-UHFFFAOYSA-N [N+](=O)([O-])[SiH2]N Chemical compound [N+](=O)([O-])[SiH2]N HLOMXSGLLYIWSP-UHFFFAOYSA-N 0.000 description 1
- 150000001343 alkyl silanes Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 1
- 150000008378 aryl ethers Chemical class 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000003917 carbamoyl group Chemical group [H]N([H])C(*)=O 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 125000004093 cyano group Chemical group *C#N 0.000 description 1
- 150000003950 cyclic amides Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000002433 cyclopentenyl group Chemical group C1(=CCCC1)* 0.000 description 1
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 125000004431 deuterium atom Chemical group 0.000 description 1
- 125000005299 dibenzofluorenyl group Chemical group C1(=CC=CC2=C3C(=C4C=5C=CC=CC5CC4=C21)C=CC=C3)* 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000002485 formyl group Chemical class [H]C(*)=O 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- AQRLNPVMDITEJU-UHFFFAOYSA-N triethylsilane Chemical group CC[SiH](CC)CC AQRLNPVMDITEJU-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- AKQNYQDSIDKVJZ-UHFFFAOYSA-N triphenylsilane Chemical group C1=CC=CC=C1[SiH](C=1C=CC=CC=1)C1=CC=CC=C1 AKQNYQDSIDKVJZ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Abstract
The present disclosure provides a display device and a method of manufacturing the same. The display device includes a substrate, a first electrode, a first light emitting stack structure, a charge donor-acceptor layer, a second light emitting stack structure, and a second electrode. The first electrode is disposed on the substrate. The first light-emitting stack structure is arranged on the first electrode. The charge donor acceptor layer is disposed on the first light emitting stack structure. The second light emitting stack structure is disposed on the charge donor-acceptor layer. The second electrode is disposed on the second light-emitting stack structure.
Description
Technical Field
The present disclosure relates to a display device, and more particularly, to a display device including a charge donor-acceptor layer.
Background
Display devices including an optical element layer have been widely used in most electronic apparatuses, and there has been a demand for larger display devices in recent years. However, in the method of manufacturing the display device, there is a step of poor yield. In fact, one of the challenges recognized in the art is to improve the yield of manufacturing while forming a display device having an optical element layer. Accordingly, the display device industry is seeking ways to address the issues described above.
Disclosure of Invention
A display device includes a substrate, a first electrode, a first light emitting stack structure, a charge donor-acceptor layer, a second light emitting stack structure, and a second electrode. The first electrode is disposed on the substrate. The first light-emitting stack structure is arranged on the first electrode. The charge donor acceptor layer is disposed on the first light emitting stack structure. The second light emitting stack structure is disposed on the charge donor-acceptor layer. The second electrode is disposed on the second light-emitting stack structure.
In certain embodiments, wherein the first light-emitting stack structure comprises an electron transport layer, the energy level of the lowest unoccupied molecular orbital of the electron transport layer of the first light-emitting stack structure is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In some embodiments, wherein the second light-emitting stack structure comprises a hole transport layer, the highest occupied molecular orbital of the hole transport layer of the second light-emitting stack structure has an energy level greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In some embodiments, the display device includes a buffer layer disposed between the first light emitting stack structure and the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the lowest unoccupied molecular orbital of the buffer layer is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the highest occupied molecular orbital of the buffer layer is greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the charge donor acceptor layer comprises a charge donor functionality and a charge acceptor functionality.
In certain embodiments, wherein the charge donor functionality comprises an electron donating nitrogen structure.
In certain embodiments, wherein the charge acceptor functionality comprises an aromatic heterocyclic structure that attracts electronic nitrogen.
In certain embodiments, the ratio of charge donor functionality to charge acceptor functionality is between 5:1 and 1:5.
The present disclosure provides a method of manufacturing a display device, including: providing a substrate; forming a first electrode on a substrate; forming a first light-emitting stack structure on the first electrode; forming a charge donor acceptor layer on the first light emitting stack structure; forming a second light emitting stack structure on the charge donor acceptor layer; and forming a second electrode on the second light-emitting stack structure.
In certain embodiments, wherein the first light-emitting stack structure comprises an electron transport layer, the energy level of the lowest unoccupied molecular orbital of the electron transport layer of the first light-emitting stack structure is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In some embodiments, wherein the second light-emitting stack structure comprises a hole transport layer, the highest occupied molecular orbital of the hole transport layer of the second light-emitting stack structure has an energy level greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In some embodiments, the display device includes a buffer layer disposed between the first light emitting stack structure and the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the lowest unoccupied molecular orbital of the buffer layer is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the highest occupied molecular orbital of the buffer layer is greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the charge donor acceptor layer comprises a charge donor functionality and a charge acceptor functionality.
In certain embodiments, wherein the charge donor functionality comprises an electron donating nitrogen structure.
In certain embodiments, wherein the charge acceptor functionality comprises an aromatic heterocyclic structure that attracts electronic nitrogen.
In certain embodiments, the ratio of charge donor functionality to charge acceptor functionality is between 5:1 and 1:5.
Drawings
Fig. 1 is a cross-sectional view of a display device according to some embodiments.
Fig. 2 is a level diagram of some components in a display device, according to some embodiments.
Fig. 3 is a cross-sectional view of a display device, according to some embodiments.
Fig. 4 is a level diagram of some components in a display device, according to some embodiments.
Fig. 5 is a cross-sectional view of a display device, according to some embodiments.
Description of the drawings
100a display device
100b display device
100c display device
10. Substrate and method for manufacturing the same
11. Electrode
12. Electrode
21. Light-emitting stack structure
211. Carrier transport layer
212. Light-emitting layer
213. Carrier transport layer
22. Light-emitting stack structure
221. Carrier transport layer
222. Light-emitting layer
223. Carrier transport layer
23. Light-emitting stack structure
231. Carrier transport layer
232. Light-emitting layer
233. Carrier transport layer
31. Buffer layer
32. Buffer layer
41. Charge donor receptor layer
42. Charge donor receptor layer
ΔE1- ΔE6 energy step difference
Detailed Description
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the application. For example, the following description of forming a first feature over or on a second feature may include embodiments in which first and second features are formed in direct contact, and may also include embodiments in which other features are formed between the first and second features, such that the first and second features are not in direct contact. Furthermore, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or architectures discussed.
Furthermore, the application may use spatially relative terms, such as "under," "below," "lower," "above," "higher," and the like, for example, to describe one element's or feature's relationship to another element's or feature in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be positioned (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contains certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Further, as used herein, "about" generally refers to within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" refers to within an acceptable standard error of average value considered by one of ordinary skill in the art. Except in the operating/working examples, or where otherwise indicated, all numerical ranges, amounts, values, and ratios of materials, time periods, temperatures, operating conditions, amounts, and the like disclosed herein are to be understood as modified in all instances by the term "about. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and claims are approximations that may vary as desired. Each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges can be expressed herein as from one end point to another, or between two end points. Unless specifically stated otherwise, all ranges disclosed herein are inclusive of the endpoints.
Fig. 1 is a cross-sectional view of a display device 100a, according to some embodiments. In some embodiments, the display device 100a may be used for organic light-emitting diode (oled), micro LED or mini LED, quantum dot LED (QLED), or other suitable light-emitting unit.
In some embodiments, display device substrate 100a includes substrate 10, electrode 11, electrode 12, light emitting stack structure 21, light emitting stack structure 22, buffer layer 31, and charge donor acceptor layer 41.
In some embodiments, the substrate 10 includes a substrate (not shown), a dielectric layer (not shown), and one or more circuits (not shown) disposed on or within the substrate. In some embodiments, the substrate is a transparent substrate, or at least a portion is transparent. In some embodiments, the substrate is a non-flexible substrate, and the material of the substrate may include glass, quartz, low temperature polysilicon (low temperature poly-silicon, LTPS), or other suitable materials. In some embodiments, the substrate is a flexible substrate, and the material of the substrate may include transparent epoxy, polyimide, polyvinyl chloride, methyl methacrylate, or other suitable materials. The dielectric layer may be optionally disposed on the substrate. In some embodiments, the dielectric layer may comprise silicon oxide, silicon nitride, silicon oxynitride, or other suitable material.
In some embodiments, the circuit may comprise a Complementary Metal Oxide Semiconductor (CMOS) circuit, or may comprise a plurality of transistors and a plurality of capacitors adjacent to the transistors, wherein the transistors and the capacitors are formed on a dielectric layer. In some embodiments, the transistor is a thin-film transistor (TFT). Each transistor includes a source/drain region (including at least a source region and a drain region), a channel (channel) region between the source/drain regions, a gate electrode disposed over the channel region, and a gate insulator between the channel region and the gate electrode. The channel region of the transistor may be made of a semiconductor material, such as silicon or other elements selected from group IV or group III and group V.
The gate electrode may be made of a conductive material such as a metal, silicide, or metal alloy. In some embodiments, the gate electrode may be a composite structure comprising several different layers, and the different layers may be distinguished from each other by applying an etchant and observing under a microscope. In some embodiments, the substrate 10 includes an interlayer dielectric structure and a first metal layer. The interlayer dielectric structure is arranged on the circuit or the transistor. The first metal layer and other circuit layers can be used for electrical connection to the electrode 11.
The electrode 11 is disposed on the surface of the substrate 10. The electrode 11 is configured to: one side is connected to circuitry embedded or electrically connected in the substrate 10 and the other side contacts the light emitting stack structure 21. The electrode 11 contains a metal material such as Ag, mg, or the like. In some embodiments, the electrode 11 comprises Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), or other suitable materials.
The light emitting stack structure 21 may be disposed on the electrode 11. In some embodiments, the light emitting stack structure 21 may be configured to emit white light, red light (e.g., light having a wavelength between 620nm and 780 nm), green light (e.g., light having a wavelength between 500nm and 580 nm), blue light (e.g., light having a wavelength between 400nm and 500 nm), or other wavelengths of light. In some embodiments, the light emitting stack structure 21 may include a carrier transport layer 211, a light emitting layer 212, and a carrier transport layer 213.
A carrier transport layer 211 (or charge transport layer) may be disposed on the electrode 11. In some embodiments, the carrier transport layer 211 is a hole transport layer (hole transportation layer, HTL). In some embodiments, the carrier transport layer 211 is an electron transport layer (electron transportation layer, ETL). In some embodiments, the carrier transport layer 211 has the property of unidirectionally transporting electrons or holes (e.g., in a direction from the electrode 11 toward the electrode 12).
The light emitting layer 212 may be disposed on the carrier transporting layer 211. The light emitting layer 212 may entirely cover the carrier transport layer 211. The light emitting layer 212 may be configured to emit white light, red light, green light, blue light, or light of other wavelengths.
The carrier transporting layer 213 (or charge transporting layer) may be disposed on the light emitting layer 212. In some embodiments, carrier transport layer 213 is an ETL. In some embodiments, the carrier transport layer 213 is an HTL. In some embodiments, the carrier transport layer 213 has the property of unidirectionally transporting electrons or holes (e.g., in a direction from the electrode 12 toward the electrode 11).
In some embodiments, the light emitting stack structure 21 may further include an electron injection layer, a hole injection layer, an electron blocking layer, and a hole blocking layer.
In some embodiments, the buffer layer 31 may be disposed on the light emitting stack structure 21. In some embodiments, the buffer layer 31 may contact the carrier transport layer 213 of the light emitting stack structure 21. In some embodiments, a buffer layer 31 may be disposed between the light emitting stack structures 21 and 22. In some embodiments, a buffer layer 31 may be disposed between the light emitting stack structure 21 and the charge donor acceptor layer 41. The buffer layer 31 may be used to enhance the light emitting efficiency of the light emitting stack structure 21 and/or the light emitting stack structure 22. In some embodiments, buffer layer 31 may be configured to reduce the energy level difference between charge donor acceptor layer 41 and carrier transport layer 213. In some embodiments, buffer layer 31 may be configured to reduce the energy level difference of the lowest unoccupied molecular orbital (lowest unoccupied molecular orbital, LUMO) of charge donor acceptor layer 41 and the LUMO of carrier transport layer 213. In some embodiments, buffer layer 31 may be configured to reduce the energy level difference of the highest occupied molecular orbital (highest occupied molecular orbital, HOMO) of charge donor acceptor layer 41 and the HOMO of carrier transport layer 213. In some embodiments, buffer layer 31 may comprise an n-type doped charge generation layer. In some embodiments, the buffer layer 31 may be composed of an n-type doped charge generation layer. In some embodiments, buffer layer 31 may comprise a p-type doped charge generation layer. In some embodiments, the buffer layer 31 may be composed of a p-type doped charge generation layer.
In some embodiments, the charge donor-acceptor layer 41 (or carrier-providing layer) may be disposed on the buffer layer 31. In some embodiments, the charge donor acceptor layer 41 may contact the light emitting stack structure 22. In some embodiments, charge donor-acceptor layer 41 may contact buffer layer 31. In some embodiments, the charge donor acceptor layer 41 may be disposed between the light emitting stack structure 21 and the light emitting stack structure 22. In some embodiments, a charge donor acceptor layer 41 may be disposed between the light emitting stack structure 22 and the buffer layer 31. The charge-donor acceptor layer 41 may be used to increase the light-emitting efficiency of the light-emitting stack structure 21 and/or the light-emitting stack structure 22. In some embodiments, the charge donor acceptor layer 41 may be configured to generate a carrier, or to separate the carrier into a charge and a hole, to provide the charge and/or hole to the light emitting stack structures 21 and 22.
In some embodiments, the charge donor acceptor layer 41 may provide both charge and hole to the light emitting stack structure 21 and the light emitting stack structure 22 (or the light emitting stack structure 22 and the light emitting stack structure 21), respectively. In some embodiments, charge donor acceptor layer 41 may comprise a compound having both a charge donor functionality and a charge acceptor functionality. In some embodiments, the charge donor acceptor layer 41 may be composed of one compound having both a charge donor functionality and a charge acceptor functionality. In some embodiments, the charge donor acceptor layer 41 has the general formula:
A-B-C
wherein a is a charge donor functional group. C is a charge acceptor functional group. B is a structure for connecting A and C.
In some embodiments, a comprises an electron donating nitrogen structure. The electron donating nitrogen may refer to a nitrogen atom having only a single bond with an adjacent atom. In some embodiments, the electron donating nitrogen can include anilino, diphenylamino, triphenylamino, methylamino, dimethylamino, trimethylamino, methylanilino, other suitable functional groups, and derivatives thereof. In some embodiments, the electron donating nitrogen can include aromatic ring groups and derivatives thereof, such as having pyrrole groups and derivatives thereof.
In some embodiments, B may include a substituted or unsubstituted alkyl, cycloalkyl, heterocyclyl, alkenyl, cycloalkenyl, alkynyl, hydroxy, thiol, alkoxy, alkylthio, aryl ether, aryl thioether, aryl, heteroaryl, halogen, cyano, aldehyde, carbonyl, carboxyl, ester, carbamoyl, amino, nitro, silane, siloxane, oxyboronyl, or other suitable structures of 6-40 carbon atoms. Wherein "unsubstituted" means that a hydrogen atom or deuterium atom is substituted.
The alkyl group comprises methyl, ethyl, n-propyl, isopropyl, n-butyl, second butyl, third butyl, or other suitable functional groups.
The cycloalkane comprises cyclopropyl, cyclohexyl, norbornyl, adamantane, or other suitable functional groups.
The heterocyclic group comprises a pyran ring, a piperidine ring, a cyclic amide or other suitable functional group.
Alkenyl groups comprise vinyl, allyl, butadiene, or other suitable functional groups.
The cycloalkenyl group comprises a cyclopentenyl, cyclopentadienyl, cyclohexene or other suitable functional group.
Alkynyl groups include ethynyl or other suitable functional groups.
Alkoxy groups include methoxy, ethoxy, propoxy, or other suitable functional groups.
The alkylthio group contains an ether bond of an alkoxy group, and an oxygen atom is substituted with a sulfur atom.
The aryl ether group includes a functional group such as a phenoxy group to which an aromatic hydrocarbon group having an ether bond interposed therebetween is bonded.
The aryl thioether group contains an ether bond of the aryl ether group, and the oxygen atom is substituted with a sulfur atom.
Aryl groups include phenyl, biphenyl, terphenyl, naphthyl, fluorenyl, benzofluorenyl, and the like dibenzofluorenyl, phenanthryl, anthryl, benzophenanthryl, benzanthraceyl,A group, pyrenyl group, or other suitable functional group.
Heteroaryl groups include pyridyl, furyl, thienyl, quinolinyl, isoquinolinyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, naphthyridinyl, cinnolinyl, phthalazinyl, quinoxalinyl, quinazolinyl, benzofuryl, benzothienyl, indolyl, dibenzofuryl, dibenzothienyl, carbazolyl, benzocarbazolyl, carbolinyl, indolocarbazolyl, benzofuranocarbazolyl, benzothiocarbazolyl, indanocarbazolyl, benzoquinolinyl, acridinyl, dibenzoacridinyl, benzimidazolyl, imidazopyridinyl, benzoxazolyl, benzothiazolyl, cinnolinyl, or other suitable functional groups.
Halogen includes fluorine, chlorine, bromine and iodine.
The silane group includes an alkylsilane group such as trimethylsilyl group, triethylsilane group, tributyldimethylsilyl group, propyldimethylsilyl group, and vinyldimethylsilyl group, an arylsilane group such as phenyldimethylsilyl group, tributyldiphenylsilane group, triphenylsilane group, and trinaphthylsilane group, and other suitable functional groups.
The siloxane groups comprise trimethylsiloxane groups or other suitable functional groups.
In some embodiments, C comprises an aromatic heterocyclic structure that attracts electronic nitrogen. The electron withdrawing nitrogen-containing aromatic heterocyclic structure may contain a nitrogen atom having multiple bonds formed between adjacent atoms. The aromatic heterocyclic structure of the electron withdrawing nitrogen includes pyridyl, furyl, thienyl, quinolinyl, isoquinolinyl, pyrazinyl, pyrimidinyl, pyridazinyl, triazinyl, naphthyridinyl, cinnolinyl, phthalazinyl, quinoxalinyl, quinazolinyl, benzofuryl, benzothienyl, indolyl, dibenzofuryl, dibenzothienyl, carbazolyl, benzocarbazolyl, carbolinyl, indolocarbazolyl, benzofurocarbazolyl, benzothiophenocarbazolyl, indanocarbazolyl, benzoquinolinyl, acridinyl, dibenzoacridinyl, benzimidazolyl, imidazopyridinyl, benzoxazolyl, benzothiazolyl, phenanthroline, other suitable functional groups and derivatives thereof.
In some embodiments, the ratio of the number of charge donor and charge acceptor functional groups is between 5:1 and 1:5.
In some embodiments, the charge donor acceptor layer 41 may be formed by a process such as evaporation.
The light emitting stack structure 22 may be disposed on the charge donor-acceptor layer 41. In some embodiments, the light emitting stack structure 22 may be configured to emit light of white, red, green, blue, or other wavelengths. In some embodiments, the light emitting stack structure 22 may include a carrier transport layer 221, a light emitting layer 222, and a carrier transport layer 223.
The carrier transport layer 221 may be disposed on the charge donor-acceptor layer 41. In some embodiments, the carrier transport layer 221 may contact the charge donor acceptor layer 41. In some embodiments, the carrier transport layer 221 is an HTL. In some embodiments, carrier transport layer 221 is an ETL. In some embodiments, the carrier transport layer 221 has the property of unidirectionally transporting electrons or holes (e.g., from the electrode 11 toward the electrode 12).
The light emitting layer 222 may be disposed on the carrier transporting layer 221. The light emitting layer 222 may cover the carrier transporting layer 221. The light emitting layer 222 may be configured to emit white light, red light, green light, blue light, or light of other wavelengths.
The carrier transport layer 223 may be disposed on the light emitting layer 222. In some embodiments, the carrier transport layer 223 is an ETL. In some embodiments, the carrier transport layer 223 is an HTL. In some embodiments, the carrier transport layer 223 has the property of unidirectionally transporting electrons or holes (e.g., in a direction from the electrode 12 toward the electrode 11).
In some embodiments, the light emitting stack structure 22 may further include an electron injection layer, a hole injection layer, an electron blocking layer, and a hole blocking layer.
The electrode 12 is disposed on the carrier transport layer 223. The electrode 12 comprises a metallic material, such as Ag, mg, or the like. In some embodiments, the electrode 12 comprises Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), or other suitable materials.
Fig. 2 is an energy level (energy level) diagram of the carrier transport layer 213, the buffer layer 31, the charge donor acceptor layer 41, and the carrier transport layer 221 of fig. 1.
In some embodiments, the energy level of the HOMO of the charge donor acceptor layer 41 is lower than the energy level of the HOMO of the buffer layer 31.
In some embodiments, the energy level of the HOMO of the charge donor acceptor layer 41 is lower than the energy level of the HOMO of the carrier transport layer 221.
In some embodiments, the energy level of the HOMO of the charge donor acceptor layer 41 is lower than the energy level of the HOMO of the carrier transport layer 213.
In some embodiments, the energy level of the HOMO of buffer layer 31 is lower than the energy level of the HOMO of carrier-transporting layer 213.
In some embodiments, the energy level of the LUMO of the charge donor acceptor layer 41 is lower than the energy level of the LUMO of the buffer layer 31.
In some embodiments, the energy level of the LUMO of the charge donor acceptor layer 41 is lower than the energy level of the LUMO of the carrier transport layer 221.
In some embodiments, the energy level of the LUMO of the charge donor acceptor layer 41 is lower than the energy level of the LUMO of the carrier transport layer 213.
In some embodiments, the energy level of the LUMO of buffer layer 31 is lower than the energy level of the LUMO of carrier-transporting layer 213.
The energy level of the HOMO of the charge donor acceptor layer 41 and the energy level of the HOMO of the carrier transport layer 221 have an energy level difference Δe1 therebetween. In some embodiments, the energy level difference Δe1 is in a range of about 0.5eV to about 1.5eV, such as 0.5eV, 0.7eV, 1eV, 1.3eV, or 1.5eV.
The energy level of the LUMO of the charge donor acceptor layer 41 and the energy level of the LUMO of the carrier transport layer 221 have an energy level difference Δe2 therebetween. In some embodiments, the energy level difference Δe2 is in a range of about 1.5eV to about 2.5eV, such as 1.5eV, 1.7eV, 2eV, 2.3eV, or 2.5eV.
The energy level of the HOMO of the charge-donor acceptor layer 41 and the energy level of the HOMO of the buffer layer 31 have a level difference Δe3 therebetween. In some embodiments, the energy level difference Δe3 is in a range of about 0.3eV to about 1.3eV, such as 0.3eV, 0.5eV, 0.8eV, 1eV, or 1.3eV. In this embodiment, the buffer layer 31 may be composed of an n-type doped charge generation layer.
The energy level of the LUMO of the charge donor acceptor layer 41 and the energy level of the LUMO of the buffer layer 31 have a difference Δe4 therebetween. In some embodiments, the energy level difference Δe4 is in a range of about 1eV to about 2eV, such as 1eV, 1.3eV, 1.5eV, 1.8eV, or 2eV. In this embodiment, the buffer layer 31 may be composed of an n-type doped charge generation layer.
The energy level of HOMO of the buffer layer 31 and the energy level of HOMO of the carrier transport layer 213 have a step difference Δe5 therebetween. In some embodiments, the energy level difference Δe5 is in a range of about 1eV to about 2eV, such as 1eV, 1.3eV, 1.5eV, 1.8eV, or 2eV. In this embodiment, the buffer layer 31 may be composed of an n-type doped charge generation layer.
The energy level of the LUMO of the buffer layer 31 and the energy level of the LUMO of the carrier-transporting layer 213 have a step difference Δe6 therebetween. In some embodiments, the energy level difference Δe6 is in a range from about 1.5eV to about 2.5eV, such as 1.5eV, 1.7eV, 2eV, 2.3eV, or 2.5eV. In this embodiment, the buffer layer 31 may be composed of an n-type doped charge generation layer.
In an embodiment of the present disclosure, the display device substrate 100a includes a charge donor-acceptor layer 41. The charge donor acceptor layer 41 includes a compound having both a charge donor functional group and a charge acceptor functional group. The structure having the charge donor functional group and the structure having the charge acceptor functional group are separate two layers and have a thicker thickness than the conventional display device. Compared with the other display device in the past, the charge generating material and the hole generating material are formed on the same layer, but the process is complex, the cost is high, and the yield is low. The process of manufacturing the display device substrate 100a is simpler and has a thinner thickness than the conventional display device. When the energy levels of the respective layers are controlled within the above-described ranges, a display device having excellent luminous efficiency can be obtained.
Fig. 3 is a cross-sectional view of a display device substrate 100b, according to some embodiments. In some embodiments, the display device substrate 100b may be similar to the display device substrate 100a, with the differences described below.
In some embodiments, the display device substrate 100b may not have the buffer layer 31. In some embodiments, the charge donor acceptor layer 41 may contact the carrier transport layer 213 of the light emitting stack structure 21. In some embodiments, the charge donor acceptor layer 41 may contact the carrier transport layer 221 of the light emitting stack structure 22.
Fig. 4 is an energy level diagram of the carrier transport layer 213, the charge donor acceptor layer 41, and the carrier transport layer 221 of fig. 2.
In some embodiments, the energy level of the HOMO of the charge donor acceptor layer 41 is lower than the energy level of the HOMO of the carrier transport layer 221.
In some embodiments, the energy level of the HOMO of the charge donor acceptor layer 41 is lower than the energy level of the HOMO of the carrier transport layer 213.
In some embodiments, the energy level of the LUMO of the charge donor acceptor layer 41 is lower than the energy level of the LUMO of the carrier transport layer 221.
In some embodiments, the energy level of the LUMO of the charge donor acceptor layer 41 is lower than the energy level of the LUMO of the carrier transport layer 213.
The energy level of the HOMO of the charge donor acceptor layer 41 and the energy level of the HOMO of the carrier transport layer 221 have an energy level difference Δe7 therebetween. In some embodiments, the energy level difference Δe7 is in a range from about 0.5eV to about 1.5eV, such as 0.5eV, 0.7eV, 1eV, 1.3eV, or 1.5eV.
The energy level of the LUMO of the charge donor acceptor layer 41 and the energy level of the LUMO of the carrier transport layer 221 have an energy level difference Δe8 therebetween. In some embodiments, the energy level difference Δe8 is in a range from about 1.5eV to about 2.5eV, such as 1.5eV, 1.7eV, 2eV, 2.3eV, or 2.5eV.
The energy level of HOMO of the carrier transport layer 213 of the charge donor acceptor layer 41 has an energy level difference Δe9. In some embodiments, the energy level difference Δe9 is in a range of about 1eV to about 2eV, such as 1eV, 1.3eV, 1.5eV, 1.8eV, or 2eV.
The energy level of the LUMO of the charge-donor acceptor layer 41 and the energy level of the LUMO of the carrier transport layer 213 have a step difference Δe of the substrate 10. In some embodiments, the level difference ΔE substrate 10 is in a range of between about 1.5eV and about 2.5eV, such as 1.5eV, 1.7eV, 2eV, 2.3eV, or 2.5eV.
The display device substrate 100b may have a thinner thickness. When the energy levels of the respective material layers of the display device substrate 100b are controlled within the above-described ranges, a display device with excellent light-emitting efficiency can be obtained.
Fig. 5 is a cross-sectional view of a display device substrate 100c, according to some embodiments. In some embodiments, the display device substrate 100c may be similar to the display device substrate 100a, with the differences described below.
In some embodiments, the display device substrate 100c further includes a buffer layer 32, a charge donor-acceptor layer 42, and a light emitting stack structure 23.
In some embodiments, the buffer layer 32 may be disposed on the light emitting stack structure 22. In some embodiments, buffer layer 32 may contact carrier transport layer 223 of light emitting stack structure 22. In some embodiments, a buffer layer 32 may be disposed between the light emitting stack structure 22 and the light emitting stack structure 23. In some embodiments, buffer layer 32 may be disposed between light emitting stack structure 22 and charge donor acceptor layer 42. Buffer layer 32 may function the same as or similar to buffer layer 31. In some embodiments, buffer layer 32 may be configured to reduce the energy level difference of the LUMO of charge donor acceptor layer 42 and the LUMO of carrier transport layer 223. In some embodiments, buffer layer 32 may be configured to reduce the energy level difference of the HOMO of charge donor acceptor layer 42 and the HOMO of carrier transport layer 223.
In some embodiments, the charge donor acceptor layer 42 may be disposed on the buffer layer 32. In some embodiments, the charge donor acceptor layer 42 may contact the light emitting stack structure 23. In some embodiments, charge donor acceptor layer 42 may contact buffer layer 32. In some embodiments, the charge donor acceptor layer 42 may be disposed between the light emitting stack structure 22 and the light emitting stack structure 23. In some embodiments, a charge donor acceptor layer 42 may be disposed between the light emitting stack structure 23 and the buffer layer 32. The function and material of the charge donor acceptor layer 42 may be the same as or similar to the charge donor acceptor layer 41.
The light emitting stack structure 23 may be disposed on the charge donor-acceptor layer 42. In some embodiments, the light emitting stack structure 23 may be configured to emit white, red, green, blue, or other wavelengths of light. In some embodiments, the light emitting stack structure 23 may include a carrier transport layer 231, a light emitting layer 232, and a carrier transport layer 233.
The carrier transport layer 231 may be disposed on the charge donor-acceptor layer 42. In some embodiments, the carrier transport layer 231 may contact the charge donor acceptor layer 42. In some embodiments, the carrier transport layer 231 is an HTL. In some embodiments, carrier transport layer 231 is an ETL. In some embodiments, the carrier transport layer 231 has the property of unidirectionally transporting electrons or holes (e.g., in a direction from the electrode 11 toward the electrode 12).
The light emitting layer 232 may be disposed on the carrier transport layer 231. The light emitting layer 232 may cover the carrier transport layer 231. The light emitting layer 232 may be configured to emit white light, red light, green light, blue light, or light of other wavelengths.
And on carrier transport layer 233. In some embodiments, carrier transport layer 233 is an ETL. In some embodiments, the carrier transport layer 233 is an HTL. In some embodiments, the carrier transport layer 233 has the property of unidirectionally transporting electrons or holes (e.g., in a direction from the electrode 12 toward the electrode 11).
In some embodiments, the light emitting stack structure 23 may further include an electron injection layer, a hole injection layer, an electron blocking layer, and a hole blocking layer.
The display device substrate 100c may be a tandem (tandem) structure. Which may include a plurality of light emitting stack structures and a charge donor acceptor layer. By controlling the number of stacks, a display device having more desirable properties can be manufactured.
The present disclosure accordingly provides a display device. A display device includes a substrate, a first electrode, a first light emitting stack structure, a charge donor-acceptor layer, a second light emitting stack structure, and a second electrode. The first electrode is disposed on the substrate. The first light-emitting stack structure is arranged on the first electrode. The charge donor acceptor layer is disposed on the first light emitting stack structure. The second light emitting stack structure is disposed on the charge donor-acceptor layer. The second electrode is disposed on the second light-emitting stack structure.
In certain embodiments, wherein the first light-emitting stack structure comprises an electron transport layer, the energy level of the lowest unoccupied molecular orbital of the electron transport layer of the first light-emitting stack structure is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In some embodiments, wherein the second light-emitting stack structure comprises a hole transport layer, the highest occupied molecular orbital of the hole transport layer of the second light-emitting stack structure has an energy level greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In some embodiments, the display device includes a buffer layer disposed between the first light emitting stack structure and the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the lowest unoccupied molecular orbital of the buffer layer is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the highest occupied molecular orbital of the buffer layer is greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the charge donor acceptor layer comprises a charge donor functionality and a charge acceptor functionality.
In certain embodiments, wherein the charge donor functionality comprises an electron donating nitrogen structure.
In certain embodiments, wherein the charge acceptor functionality comprises an aromatic heterocyclic structure that attracts electronic nitrogen.
In certain embodiments, the ratio of charge donor functionality to charge acceptor functionality is between 5:1 and 1:5.
The present disclosure provides a method of manufacturing a display device, including: providing a substrate; forming a first electrode on a substrate; forming a first light-emitting stack structure on the first electrode; forming a charge donor acceptor layer on the first light emitting stack structure; forming a second light emitting stack structure on the charge donor acceptor layer; and forming a second electrode on the second light-emitting stack structure.
In certain embodiments, wherein the first light-emitting stack structure comprises an electron transport layer, the energy level of the lowest unoccupied molecular orbital of the electron transport layer of the first light-emitting stack structure is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In some embodiments, wherein the second light-emitting stack structure comprises a hole transport layer, the highest occupied molecular orbital of the hole transport layer of the second light-emitting stack structure has an energy level greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In some embodiments, the display device includes a buffer layer disposed between the first light emitting stack structure and the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the lowest unoccupied molecular orbital of the buffer layer is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the energy level of the highest occupied molecular orbital of the buffer layer is greater than the energy level of the highest occupied molecular orbital of the charge donor acceptor layer.
In certain embodiments, wherein the charge donor acceptor layer comprises a charge donor functionality and a charge acceptor functionality.
In certain embodiments, wherein the charge donor functionality comprises an electron donating nitrogen structure.
In certain embodiments, wherein the charge acceptor functionality comprises an aromatic heterocyclic structure that attracts electronic nitrogen.
In certain embodiments, the ratio of charge donor functionality to charge acceptor functionality is between 5:1 and 1:5.
The foregoing outlines features of some embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments of the present application. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Furthermore, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. Those of skill in the art will appreciate from the disclosure of the present disclosure that a process, machine, manufacture, composition of matter, means, methods, or steps, presently existing or later to be developed that perform the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the present disclosure. Accordingly, such processes, machines, manufacture, compositions of matter, means, methods, or steps, are included in the claims of the present application.
Claims (20)
1. A display device, comprising:
a substrate;
a first electrode disposed on the substrate;
a first light emitting stack structure disposed on the first electrode;
a charge donor acceptor layer disposed on the first light emitting stack structure;
a second light emitting stack structure disposed on the charge donor acceptor layer; and
and the second electrode is arranged on the second luminous stack structure.
2. The display apparatus of claim 1, wherein the first light emitting stack structure comprises an electron transport layer and an energy level of a lowest unoccupied molecular orbital of the electron transport layer of the first light emitting stack structure is greater than an energy level of a lowest unoccupied molecular orbital of the charge donor acceptor layer.
3. The display apparatus of claim 1, wherein the second light-emitting stack structure comprises a hole transport layer and an energy level of a highest occupied molecular orbital of the hole transport layer of the second light-emitting stack structure is greater than an energy level of a highest occupied molecular orbital of the charge donor acceptor layer.
4. The display device of claim 1, further comprising:
and the buffer layer is arranged between the first luminescence stack structure and the charge donor acceptor layer.
5. The display device of claim 4, wherein an energy level of a lowest unoccupied molecular orbital of the buffer layer is greater than an energy level of a lowest unoccupied molecular orbital of the charge donor acceptor layer.
6. The display device of claim 4, wherein an energy level of a highest occupied molecular orbital of the buffer layer is greater than an energy level of a highest occupied molecular orbital of the charge donor acceptor layer.
7. The display apparatus of claim 1, wherein the charge donor acceptor layer comprises a charge donor functional group and a charge acceptor functional group.
8. The display device of claim 7, wherein the charge donor functional group comprises an electron donating nitrogen structure.
9. The display device of claim 7, wherein the charge acceptor functionality comprises an aromatic heterocyclic structure that attracts electronic nitrogen.
10. The display device of claim 7, wherein the ratio of the charge donor functionality and the charge acceptor functionality is between 5:1 and 1:5.
11. A method of manufacturing a display device, comprising:
providing a substrate;
forming a first electrode on the substrate;
forming a first light-emitting stack structure on the first electrode;
forming a charge donor acceptor layer on the first light emitting stack structure;
forming a second light emitting stack structure on the charge donor acceptor layer; and
forming a second electrode on the second light-emitting stack structure.
12. The method of claim 11, wherein the first light emitting stack structure comprises an electron transport layer and an energy level of a lowest unoccupied molecular orbital of the electron transport layer of the first light emitting stack structure is greater than an energy level of a lowest unoccupied molecular orbital of the charge donor layer.
13. The method of claim 11, wherein the second light emitting stack structure comprises a hole transport layer and an energy level of a highest occupied molecular orbital of the hole transport layer of the second light emitting stack structure is greater than an energy level of a highest occupied molecular orbital of the charge donor acceptor layer.
14. The method of claim 11, further comprising:
a buffer layer is formed on the first light-emitting stack structure.
15. The method of claim 14, wherein the energy level of the lowest unoccupied molecular orbital of the buffer layer is greater than the energy level of the lowest unoccupied molecular orbital of the charge donor acceptor layer.
16. The method of claim 14, wherein an energy level of a highest occupied molecular orbital of the buffer layer is greater than an energy level of a highest occupied molecular orbital of the charge donor acceptor layer.
17. The method of claim 11, wherein the charge donor acceptor layer comprises a charge donor functional group and a charge acceptor functional group.
18. The method of claim 17, wherein the charge donor functional group comprises an electron donating nitrogen structure.
19. The method of claim 11, wherein the charge acceptor functional group comprises an aromatic heterocyclic structure that attracts an electronic nitrogen.
20. The method of claim 17, wherein the ratio of the charge donor functionality and the charge acceptor functionality is between 5:1 and 1:5.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263370265P | 2022-08-03 | 2022-08-03 | |
| US63/370,265 | 2022-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117580390A true CN117580390A (en) | 2024-02-20 |
Family
ID=89861229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211266668.1A Pending CN117580390A (en) | 2022-08-03 | 2022-10-17 | Display device and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117580390A (en) |
-
2022
- 2022-10-17 CN CN202211266668.1A patent/CN117580390A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101003267B1 (en) | Organic Light Emitting Device and Method for Manufacturing the Same | |
| CN103137879B (en) | Organic light-emitting diode including multi-layered hole transporting layer, and flat display device | |
| EP2629346B1 (en) | Organic light-emitting device having improved efficiency characteristics and organic light-emitting display apparatus including the same | |
| KR100690348B1 (en) | Organic electronic devices | |
| CN103515537B (en) | Organic light emitting apparatus including multilamellar hole transmission layer and the oganic light-emitting display device including this device | |
| KR100721656B1 (en) | Organic electronic devices | |
| CN104168682B (en) | Light-emitting component, light-emitting device, electronic equipment and illuminator | |
| US20120326137A1 (en) | Organic light-emitting diode and flat display device including the same | |
| EP2474026B1 (en) | Current-amplifying transistor device and current-amplifying, light-emitting transistor device | |
| Ganesan et al. | En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review | |
| TW200926475A (en) | Organic semiconductor light emitting device | |
| CN117580390A (en) | Display device and method of manufacturing the same | |
| CN116264810A (en) | Organic light emitting diode and organic light emitting display device including the same | |
| EP3435437A1 (en) | Organic light-emitting element | |
| US20170229672A1 (en) | Organic light emitting devices and methods of making them | |
| TW201900847A (en) | Organic electroluminescent device | |
| US20230209992A1 (en) | Organic light emitting diode and organic light emitting display device including the same | |
| EP4207967A2 (en) | Organic light emitting diode and organic light emitting display device including the same | |
| US20230200231A1 (en) | Organic light emitting diode and organic light emitting display device including the same | |
| US20230189642A1 (en) | Emitting Compound and Organic Light Emitting Device Including the Same | |
| WO2023206274A1 (en) | Organic electroluminescent diode and display panel | |
| US10026919B2 (en) | Organic light-emitting device | |
| KR102667321B1 (en) | Organic compounds, organic light emitting diode and orgnic light emitting diode display device having the compounds | |
| US20060147649A1 (en) | Photoelectric devices | |
| CN116264781A (en) | Organic light emitting diode and organic light emitting display device including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |