CN117577538A - Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film - Google Patents
Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film Download PDFInfo
- Publication number
- CN117577538A CN117577538A CN202311482285.2A CN202311482285A CN117577538A CN 117577538 A CN117577538 A CN 117577538A CN 202311482285 A CN202311482285 A CN 202311482285A CN 117577538 A CN117577538 A CN 117577538A
- Authority
- CN
- China
- Prior art keywords
- film
- spin
- solution
- substrate
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000004528 spin coating Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 23
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 58
- 238000000137 annealing Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000010445 mica Substances 0.000 claims description 6
- 229910052618 mica group Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 6
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 7
- 238000011160 research Methods 0.000 abstract description 5
- 238000001308 synthesis method Methods 0.000 abstract description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 abstract 3
- 238000000089 atomic force micrograph Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000002135 nanosheet Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical class O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002064 nanoplatelet Substances 0.000 description 3
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical class C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 1
- 241001354791 Baliga Species 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses an ultrathin atomic-level flat Ga based on a solution-assisted spin-coating method 2 O 3 A preparation method of a film belongs to the field of semiconductor film materials. The Ga 2 O 3 The film is prepared by using Ga (NO) 3 ) 3 ·xH 2 O and ethylene glycol (CH) 2 OH) 2 Ga (NO) 3 ) 3 ·xH 2 O is dissolved in (CH) 2 OH) 2 A colorless transparent solution was formed. The solution is coated on a selected substrate by spin coating and annealed in an atmospheric environment to obtain the target Ga 2 O 3 A film. The method is economical, efficient and simple to operate, and can accurately control the thickness of the film to be as thin as 3nm. More remarkably, the synthesis method produces Ga 2 O 3 The film exhibits high film on centimeter-scale substratesUniform degree and flat atomic level. The research result has remarkable academic and application value in the field of semiconductor films.
Description
Technical Field
The invention belongs to the field of semiconductor film materials, and particularly relates to an ultrathin atomic level flat Ga based on a solution-assisted spin-coating method 2 O 3 A method for preparing a film.
Background
With the increasing maturity of Integrated Circuit (IC) technology, its core position in modern electronic and communication systems is more prominent. Although conventional semiconductor materials, such as silicon (Si), have achieved excellent results in various aspects, the performance requirements of semiconductor materials are more stringent in specific fields such as high power and high frequency electronics. Thus, gallium oxide (Ga 2 O 3 ) Is being widely concerned and studied as an emerging semiconductor material, especially its most stable crystalline phase beta-Ga 2 O 3 The high-voltage high-power electronic device has a large energy band gap, a high breakdown electric field and an excellent Baliga quality factor, so that the high-voltage high-power electronic device has remarkable potential in the fields of high-voltage high-power electronic devices, ultraviolet/X-ray detectors, anti-radiation applications and the like. However, any semiconductor material is successful in electronic applications, and one of its key factors is the ability to synthesize high quality thin films by efficient, scalable and cost-effective methods. Compared with the traditional film synthesis technology such as Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE), the solution assisted spin coating method has the advantages of simple preparation, low cost, uniform height of the obtained film and suitability for various substrates, and is characterized by Ga 2 O 3 The preparation of the film has obvious advantages. By preparing ultra-thin flat Ga 2 O 3 The film not only can widen the application range of the film in the fields of electronic and optoelectronic equipment and improve the performance of devices, but also is helpful to promote the progress of related scientific research fields.
However, ultra-thin, atomically flat Ga is currently being prepared 2 O 3 In the aspect of films, researches are blank, and an economical and simple synthesis method is lacked. Thus, the exploration and development of new synthetic routes for achieving high quality ultra-thin planar Ga 2 O 3 The film has profound research and application value.
Disclosure of Invention
The invention aims to provide an ultrathin atomic-level flat Ga 2 O 3 A method for preparing a film.
The technical problems to be solved are as follows: the invention is based on supervisors critical in industrial applicationsWide band gap semiconductor gallium oxide (Ga 2 O 3 ) Provides a simple, efficient and extensible solution auxiliary synthesis method, thereby successfully realizing high-quality ultrathin atomic-level flat Ga 2 O 3 And (3) preparing a film. The method involves the steps of adding Ga (NO 3 ) 3 ·xH 2 O and (CH) 2 OH) 2 The mixed precursor solution is coated on the surface of a substrate in a spin coating mode, and then is annealed in air, so that Ga which has uniform cm size, flat atomic scale and controllable thickness and is applicable to various substrates is decomposed and synthesized 2 O 3 A film. Notably, synthesized Ga 2 O 3 The film has an atomically flat surface roughness, as low as 0.12nm, on substrates of centimeter size. In addition, the thickness of the thin film can be precisely adjusted by adjusting the spin coating speed or using different concentrations of Ga precursor. This study is innovative not only in terms of scientific research, but also shows wide applicability and important value in practical industrial applications.
The method for preparing the ultra-thin atomic level flat Ga 2 O 3 A method of forming a film comprising the steps of:
with Ga (NO) 3 ) 3 ·xH 2 O and (CH) 2 OH) 2 Ga (NO) 3 ) 3 ·xH 2 O is dissolved in (CH) 2 OH) 2 A colorless transparent solution was formed. A spin coating method is used to obtain a film precursor, and annealing is performed in air to obtain the Ga 2 O 3 Film samples.
In the above method, the Ga (NO 3 ) 3 ·xH 2 O is 0.5g-3g, (CH) 2 OH) 2 10ml.
The spin coating is performed on a substrate.
The substrate is specifically a silicon wafer, and the chemical formula is Si/SiO 2 The method comprises the steps of carrying out a first treatment on the surface of the Mica with chemical formula of KMg 3 (AlSi 3 0 10 )F 2 。
The substrate is pretreated in an oxygen Plasma atmosphere.
The plasma power is 50-100W, and can be 50W or 100W.
The flow rate of oxygen is 300-500cc/min, specifically 400s.c.c.m.;
the treatment time is 5-10 min, specifically 5min.
In the spin coating step, the substrate is fixed at the center of the spin coater, and a dropper is used to prepare Ga (NO 3 ) 3 /(CH 2 OH) 2 The solution is dropped onto the substrate and the solution is spin-coated.
The rotating speed of the spin coater is 3000-8000r/min, specifically 4000r/min and 6000r/min;
the spin-coating time is 40-60 seconds, and may be 60 seconds in particular.
In the spin coating step, the spin-coated substrate is placed on a heating table, and the solvent is evaporated.
The temperature of the heating table is 180-210 ℃, and can be 180 ℃ specifically;
the heating time is 5-10 seconds, and may be specifically 8 seconds.
The substrate was placed in the center of a horizontal tube furnace and annealed in air to obtain Ga 2 O 3 A film;
the annealing temperature is 480-800 ℃, specifically 480 ℃, 600 ℃ and 800 ℃.
The annealing time is 30-60 minutes, specifically 30 minutes and 60 minutes;
the heating rate is 5-10deg.C/min, specifically 5 deg.C/min, 10deg.C/min.
The method further comprises the steps of: after the annealing step, the system is naturally cooled to room temperature.
The Ga 2 O 3 The films all exhibited atomically flat surface roughness on cm-sized substrates, as low as 0.12nm.
Ga prepared according to the above method 2 O 3 The thin film is also applied to devices and the like in the field of semiconductors, and also belongs to the protection scope of the invention.
The invention has the technical effects that:
the invention provides a method for preparing ultrathin atomic level flat based on a solution-assisted spin coating methodGallium oxide (Ga) 2 O 3 ) A method of forming a film. The method realizes the high-quality ultrathin atomic-level flattening of Ga for the first time 2 O 3 The thickness of the film can be controlled by adjusting the spin-coating speed or the concentration of Ga precursor, and the function is as follows:where h is the thickness of the resulting film, μ is the viscosity of the solution, t is the spin time, ω is the spin speed. The preparation method is simple, controllable, economical and efficient, and can realize that substrates with the size of centimeters all show atomically flat surface roughness, R a Can be as low as 0.12nm, can be controlled to be as thin as 3nm, and has various substrate suitability such as Si/SiO 2 And a mica substrate. Thus, the invention is ultra-thin atomically flat Ga 2 O 3 The synthesis of the film provides an effective method selection, and provides a novel synthesis path and platform of high-performance photoelectronic devices for research and development of the microelectronics fields such as low-dimensional electronics, optoelectronics and the like.
Drawings
FIG. 1 shows the synthesis of ultra-thin atomic level flat Ga based on solution-assisted spin-coating 2 O 3 Schematic representation of the film;
FIG. 2 shows Ga obtained in example 1 of the present invention 2 O 3 Optical photomicrographs and Atomic Force Microscope (AFM) images of the films;
FIG. 3 shows Ga obtained in example 1 of the present invention 2 O 3 X-ray photoelectron spectroscopy (XPS) of the film;
FIG. 4 shows Ga obtained by photolithography and wet etching in example 1 of the present invention 2 O 3 Optical photomicrographs of discrete nanoplatelets of the film;
FIG. 5 shows Ga obtained in example 1 of the present invention 2 O 3 Atomic Force Microscope (AFM) image comparison of nanoplatelets;
FIG. 6 shows Ga obtained in example 2 of the present invention 2 O 3 Optical photomicrographs and Atomic Force Microscope (AFM) images of the films;
FIG. 7 is a schematic diagram of a preferred embodiment of the present inventionGa obtained in example 2 of the present invention 2 O 3 X-ray diffraction (XRD) patterns of the films were compared;
FIG. 8 Ga on mica substrate obtained in example 3 of the present invention 2 O 3 Optical photomicrographs and Atomic Force Microscope (AFM) images of the films.
Detailed Description
The invention will be further illustrated with reference to the following specific examples, but the invention is not limited to the following examples. The methods are conventional methods unless otherwise specified. The starting materials are available from published commercial sources unless otherwise specified.
Example 1
1g Ga (NO) is weighed 3 ) 3 ·xH 2 O、10ml(CH 2 OH) 2 Ga (NO) 3 ) 3 ·xH 2 O is dissolved in (CH) 2 OH) 2 A colorless transparent solution was formed.
To Si/SiO 2 The substrate is placed in an oxygen Plasma atmosphere for pretreatment; plasma power 50W; the flow rate of oxygen is 400s.c.c.m.; the treatment time was 5 minutes.
Preparation of Ga according to the invention 2 O 3 A schematic of a solution-assisted spin-coating process for thin films is shown in fig. 1. Ga (NO) 3 ) 3 /(CH 2 OH) 2 The solution was dropped on the pretreated silicon wafer substrate and the coating solution was spun at 4000rpm for 60 seconds. Ga (NO) 3 ) 3 /(CH 2 OH) 2 The film was heated at 180 ℃ for a few seconds to evaporate the solvent.
Ga (NO) 3 ) 3 The film was placed in the center of a horizontal tube furnace and annealed in air to obtain Ga 2 O 3 A film. The heating rate of the heating furnace was set at 8℃per minute, and it was maintained at 480℃for 30 minutes. Naturally cooling to room temperature, and depositing Ga 2 O 3 Taking out the silicon wafer substrate of the film to obtain the Ga provided by the invention 2 O 3 A film.
FIG. 2 shows Ga obtained in this example 1 2 O 3 Optical photomicrographs and Atomic Force Microscope (AFM) images of the films. From the graphGa is known 2 O 3 The film has good uniformity, shows atomically flat surface roughness, and has a roughness as low as 0.12nm.
FIG. 3 shows Ga obtained in example 1 2 O 3 XPS spectrum of film; as can be seen from the figure, the obtained film contains two elements of Ga and O, and the synthesis of Ga is proved 2 O 3 A film.
FIG. 4 shows Ga obtained in example 1 2 O 3 A nano-sheet. Using standard photolithography techniques, using 5350 photoresist as a mask, by uv exposure and wet chemical etching methods: 85% concentration of H 3 PO 4 Etching the solution at 100deg.C for 5min to obtain Ga 2 O 3 The continuous film (3.3 nm) was converted into discrete 40 x 20 μm 2 Ga 2 O 3 The nano-sheet has good film integrity and etching effect.
FIG. 5 shows Ga obtained in example 1 of the present invention 2 O 3 Atomic Force Microscope (AFM) image comparison of thin film discrete nanoplatelets. At 1 x 1cm 2 Ga at the center and edge of a silicon wafer substrate is selected 2 O 3 The nano-sheets, wherein a is the thickness of the nano-sheets in the central region of the substrate, and b and c are the thicknesses of the nano-sheets at the edges of the substrate. As can be seen, ga is obtained by solution-assisted spin-coating on a wafer-level silicon wafer substrate 2 O 3 The thin film was highly uniform with a height difference of 0.1nm.
Example 2
The procedure is as in example 1, except that Ga (NO 3 ) 3 ·xH 2 The O powder mass was raised to 3g.
The Plasma power of the substrate process was increased to 100W.
The temperature rising speed of annealing in air is reduced to 5 ℃/min, the annealing temperature is increased to 800 ℃, the annealing time is increased to 60 minutes, the temperature is naturally reduced to room temperature, and Ga is deposited 2 O 3 Taking out the silicon wafer substrate of the film to obtain the Ga provided by the invention 2 O 3 A film.
FIG. 6 shows Ga obtained in example 2 2 O 3 Optical microscopy images and Atomic Force Microscopy (AFM) images of the films. From the following componentsThe figure shows that the method can still maintain Ga under the conditions of high solution concentration and high annealing temperature 2 O 3 The film has good uniformity and is still atomically flat and has roughness R a ～0.16nm。
FIG. 7 is Ga obtained in example 2 2 O 3 X-ray diffraction (XRD) patterns of the films were compared. As can be seen from the figure, ga is obtained 2 O 3 Diffraction peak of film and beta-Ga 2 O 3 Is described as synthesized beta-Ga 2 O 3 A film.
Example 3
The procedure is as in example 1, except that the base material is selected to be mica (KMg 3 (AlSi 3 O 10 )F 2 ) A substrate.
FIG. 8 shows Ga obtained in this example 3 2 O 3 Optical photomicrographs and Atomic Force Microscope (AFM) images of the films. From the figure, it can be seen that Ga is obtained on a mica substrate by this method 2 O 3 The films also have good uniformity, exhibit atomically flat surface roughness, as low as 0.12nm.
Example 4
The procedure is as in example 1, except that Ga (NO 3 ) 3 ·xH 2 The O powder mass was reduced to 0.5g.
Example 5
The procedure is as in example 1, except for Ga (NO 3 ) 3 /(CH 2 OH) 2 The rotational speed of the solution spin-coated substrate was raised to 6000rpm.
Although embodiments of the present invention have been described above, it should be understood that the above embodiments are illustrative and not to be construed as limiting the present invention, and that variations, modifications, alternatives, and variations may be made to the above embodiments by those skilled in the art within the scope of the present invention.
Claims (9)
1. Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 The preparation method of the film is characterized in that:
with Ga (NO) 3 ) 3 ·xH 2 O and (CH) 2 OH) 2 Ga (NO) 3 ) 3 ·xH 2 O is dissolved in (CH) 2 OH) 2 Forming colorless transparent solution, spin-coating to obtain film precursor, annealing in air to obtain Ga 2 O 3 Film sample, ga obtained 2 O 3 The thickness of the thin film is adjusted by changing the spin-coating speed or the concentration of the Ga precursor.
2. The method according to claim 1, characterized in that: the spin coating is performed on a substrate, the substrate is silicon slice or mica, and chemical formulas are Si/SiO respectively 2 And KMg 3 (AlSi 3 O 10 )F 2 。
3. The method according to claim 2, characterized in that: the substrate is pretreated in an oxygen Plasma atmosphere;
the Plasma power is 50-100W;
the flow rate of oxygen is 300-500s.c.c.m.;
the treatment time is 5-10 minutes.
4. A method according to any one of claims 1-3, characterized in that: spin coating is carried out on a spin coater; the substrate is fixed at the center of the spin coater, a dropper is used for dripping the solution on the substrate, and the solution is coated in a rotating way;
the rotating speed of the spin coater is 3000-8000r/min;
the spin coating time is 40-60s.
5. The method according to claim 1, characterized in that: ga (NO) 3 ) 3 ·xH 2 0.5-3 g of O Crystal (CH) 2 OH) 2 The solution was 10ml.
6. The method according to claim 4, wherein: placing the spin-coated substrate on a heating table, and evaporating the solvent;
the temperature of the heating table is 180-210 ℃;
the heating time is 5-10s.
7. The method according to claim 6, wherein: the substrate was placed in the center of a horizontal tube furnace and annealed in air to obtain Ga 2 O 3 A film;
the annealing temperature is 480-800 ℃;
the annealing time is 30-60 minutes;
the heating rate is 5-10 ℃/min.
8. An ultra-thin atomically flat Ga prepared by the method of any one of claims 1-7 2 O 3 A film.
9. Ga according to claim 8 2 O 3 The film is characterized in that: ga 2 O 3 The film has an atomically flat surface roughness in cm dimensions, the roughness R a And can be as low as 0.12nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311482285.2A CN117577538A (en) | 2023-11-09 | 2023-11-09 | Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311482285.2A CN117577538A (en) | 2023-11-09 | 2023-11-09 | Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117577538A true CN117577538A (en) | 2024-02-20 |
Family
ID=89889059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311482285.2A Pending CN117577538A (en) | 2023-11-09 | 2023-11-09 | Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117577538A (en) |
-
2023
- 2023-11-09 CN CN202311482285.2A patent/CN117577538A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1284306B1 (en) | Silane composition, silicon film forming method and solar cell production method | |
| Ma et al. | Atomic-layer-deposition of indium oxide nano-films for thin-film transistors | |
| EP1085560B1 (en) | Method for forming a silicon film | |
| JP4042327B2 (en) | Thin film transistor manufacturing method | |
| CN103194729B (en) | The preparation method of metal chalcogenide film | |
| KR101820554B1 (en) | p-Doped Silicon Layers | |
| US8946068B2 (en) | Patterned doping of semiconductor substrates using photosensitive monolayers | |
| TW201041835A (en) | Indium alkoxide-containing compositions, process for preparation thereof and use thereof | |
| EP0417942B1 (en) | Manufacture of polycrystalline silicon thin films and of transistors therefrom | |
| US9340678B2 (en) | Process to form aqueous precursor and aluminum oxide film | |
| CN109811307B (en) | Preparation method of two-dimensional material nano belt or micro belt | |
| CN110551986A (en) | Method for direct patterned growth of atomic layer transition metal dichalcogenides | |
| Esro et al. | Solution‐Processed Neodymium Oxide/ZnO Thin‐Film Transistors with Electron Mobility in Excess of 65 cm V− 1 s− 1 | |
| CN113428845A (en) | Method for preparing two-dimensional molybdenum ditelluride nano material by limited-area chemical vapor deposition | |
| Das | A novel approach towards silicon nanotechnology | |
| TW201137169A (en) | Process for production of silicon layers | |
| JPH04174517A (en) | Manufacture of diamond semiconductor | |
| CN117577538A (en) | Ultra-thin atomic-level flat Ga based on solution-assisted spin-coating method 2 O 3 Method for producing film | |
| JP2001308020A (en) | Silicon film and method of forming its pattern | |
| CN115341273A (en) | Preparation of large-size two-dimensional thermoelectric material bismuth telluride single crystal | |
| Yang et al. | Solution‐Processed Metal Oxide Thin‐Film Transistor at Low Temperature via A Combination Strategy of H2O2‐Inducement Technique and Infrared Irradiation Annealing | |
| Wang et al. | MoSe2 thin films and thin-film transistors prepared by electron beam evaporation | |
| Almaimouni et al. | Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation | |
| CN117800390A (en) | Method for preparing two-dimensional bismuth oxide sulfur film by solution auxiliary method | |
| CN117630067A (en) | Janus MoSSe preparation method based on metal substrate and Janus MoSSe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |