CN117568782A

CN117568782A - Chemical reaction source supply system and semiconductor processing device

Info

Publication number: CN117568782A
Application number: CN202311419668.5A
Authority: CN
Inventors: 董斌; 苏扬杨; 卞达开; 罗际蔚
Original assignee: Yanwei Jiangsu Semiconductor Technology Co ltd
Current assignee: Yanwei Jiangsu Semiconductor Technology Co ltd
Priority date: 2023-10-30
Filing date: 2023-10-30
Publication date: 2024-02-20

Abstract

The present invention provides a chemical reaction source supply system, comprising: the reaction source container, the heating cabinet, the reaction source supply pipeline, the first control valve, the heating device and the cooling device are positioned in the heating cabinet, and the inside of the heating cabinet is in an atmospheric pressure environment; the bottom valve body of the first control valve is arranged in the heating cabinet, the working temperature is more than or equal to 200 ℃, the actuator of the first control valve is arranged outside the heating cabinet, and the working temperature of the actuator is less than or equal to 120 ℃; the heating device comprises a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet and used for heating the reaction source container, and the second heating unit is arranged outside the heating cabinet and used for heating the heating cabinet; the cooling device is arranged outside the heating cabinet. The improved structural design of the invention greatly simplifies the structure of the whole system, greatly reduces the volume and can obviously reduce the use and maintenance cost. The semiconductor processing device provided by the invention is beneficial to reducing the production cost.

Description

Chemical reaction source supply system and semiconductor processing device

Technical Field

The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a chemical reaction source supply system and a semiconductor processing apparatus.

Background

Semiconductor thin film deposition apparatuses generally use a liquid source or a solid source as a reaction source. Wherein the supply and delivery of solid state sources is one of the key technical difficulties in semiconductor thin film deposition. Since solids have fluidity unlike liquids and the saturated vapor pressure is relatively low and heating to about 200 ℃ is required, in a solid chemical reaction source supply system (solid distribution system, abbreviated as SDS), uniformity of heating has a critical influence on whether a solid source can be stably supplied. In order to uniformly heat the reaction source container without dead angle, the common practice is to place the reaction source container, the control valve and other parts in a vacuum environment with a certain pressure. Too high or too low a pressure may destabilize the ambient temperature around the reaction source vessel. Therefore, in order to maintain a vacuum environment, it is necessary to provide a vacuum chamber for accommodating the reaction source container, a vacuum pump, and sealing members such as an O-ring and a flange, and to design a sealed passage for the entrance and exit of the gas supply line and the electric heating wire. In addition, the valve placed in the vacuum cabinet needs to withstand the high temperature of 220 ℃ or higher, so that a high-temperature DH valve with higher cost needs to be selected. These designs greatly increase the cost and maintenance difficulty of existing SDS.

It should be noted that the foregoing description of the background art is only for the purpose of facilitating a clear and complete description of the technical solutions of the present application and for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background section of the present application.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a chemical reaction source supply system and a semiconductor processing apparatus, which are used for solving the problems that in the prior art, the way of heating the whole components such as a reaction source container and a control valve in a closed vacuum cabinet is complex, and high-cost high-temperature resistant valves must be used because all the components are arranged in the heating cabinet, and the cost and maintenance difficulty of the chemical reaction source supply system are increased.

To achieve the above and other related objects, the present invention provides a chemical reaction source supply system including: a reaction source container, a heating cabinet, a reaction source supply pipeline, a first control valve, a heating device and a cooling device, wherein,

the reaction source container is arranged in the heating cabinet and used for accommodating a chemical reaction source, and the inside of the heating cabinet is in an atmospheric pressure environment;

the first control valve is arranged above the reaction source container and is arranged on a reaction source supply pipeline communicated with the reaction source container and used for controlling the supply of chemical reaction sources in the reaction source container;

the bottom valve body of the first control valve is arranged in the heating cabinet, the working temperature of the bottom valve body is more than or equal to 200 ℃, the actuator of the first control valve is arranged outside the heating cabinet and used for controlling the opening and closing of the bottom valve body, and the working temperature of the actuator is less than or equal to 120 ℃;

the heating device comprises a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet and used for heating the reaction source container, and the second heating unit is arranged outside the heating cabinet and used for heating the heating cabinet;

the cooling device is arranged outside the heating cabinet.

Optionally, the first heating unit includes heating plates respectively contacting the bottom and the top of the reaction source container, and the second heating unit includes heating strips disposed outside the heating cabinet.

Optionally, the chemical reaction source supply system further comprises a thermal insulation layer, wherein the thermal insulation layer is arranged outside the heating cabinet, is close to the heating belt and is away from the outer surface of the heating cabinet.

Optionally, the chemical reaction source supply system further comprises a reflecting plate arranged on the inner surface of the heating cabinet.

Optionally, the chemical reaction source supply system further includes a second control valve, the second control valve is disposed on a reaction source supply line communicating with the reaction source container, the second control valve is disposed in the same manner as the first control valve, or the second control valve is disposed outside the heating cabinet.

In an alternative, when the second control valve is disposed outside the heating cabinet, the second control valve includes a non-high temperature valve, and the chemical reaction source supply system further includes a heating unit to heat the second control valve.

In another alternative, the first control valve comprises an ALD valve; the chemical reaction source supply system further comprises a heat dissipation device which is arranged outside the heating cabinet and used for dissipating heat of the actuator of the first control valve.

Optionally, at least one internal channel for accommodating a chemical reaction source is arranged inside the reaction source container, and a carrier gas inlet of the reaction source container is communicated with the internal channel.

Optionally, the heating device further comprises a third heating unit and/or a fourth heating unit, wherein the third heating unit is positioned on an air outlet pipeline communicated with the air outlet of the reaction source container, and the fourth heating unit is used for heating the carrier gas pipeline.

The invention also provides a semiconductor processing device, which comprises a process chamber for semiconductor processing and the chemical reaction source supply system according to any scheme, wherein the process chamber is provided with an air inlet and an air outlet, the air inlet of the process chamber is communicated with the air outlet of the reaction source container, and the air outlet of the process chamber is communicated to an exhaust pipeline.

As described above, the chemical reaction source supply system and the semiconductor processing apparatus of the present invention have the following advantageous effects: according to the chemical reaction source supply system provided by the invention, the bottom valve body of the first control valve is arranged in the heating cabinet, the actuator is arranged outside the heating cabinet, and the heating devices are arranged inside and outside the heating cabinet, so that the inside and outside of the heating cabinet are in distinct temperature environments, the heating temperature of the reaction source container can be met, the working temperature of the actuator can be reduced, and the service life of the first control valve can be prolonged. Meanwhile, because the actuator of the first control valve does not need to work in a high-temperature environment, the first control valve does not need to use a DH valve and other high-temperature valves, and the system cost can be reduced; the inside atmospheric pressure environment that is in of heating cabinet is through ingenious heating device who sets up in order to ensure that the reaction source container in the heating cabinet is in ideal reaction source heating temperature, can realize the even heating to the reaction source container under the circumstances that need not to use sealing member such as vacuum pump and flange. The improved structural design of the invention greatly simplifies the structure of the whole system, greatly reduces the volume and can obviously reduce the use and maintenance cost. The semiconductor processing device provided by the invention is beneficial to reducing the production cost.

Drawings

Fig. 1 to 3 are schematic structural views of a chemical reaction source supply system according to the present invention in different examples.

FIG. 4 is an illustrative top view of the bottom surface of a reaction source container provided by the present invention.

Fig. 5 is a schematic cross-sectional view of a semiconductor processing apparatus according to the present invention.

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex. In order to make the illustration as concise as possible, not all structures are labeled in the drawings.

The existing SDS (solid distribution system, chemical reaction source supply system) needs a vacuum cabinet to maintain the uniformity and stability of the ambient temperature around the reaction source container. For this purpose, SDS is generally composed of the following parts: the reaction source container, a pneumatic valve (high temperature resistant to 220 ℃ or higher) arranged above the container and used for controlling the supply of the solid source, a vacuum cabinet for accommodating all the components and a heater respectively used for heating the container and the whole vacuum cabinet. The vacuum cabinet is externally connected with a vacuum pump to keep the pressure in the cabinet between 3Torr and 6Torr, so as to maintain a stable and uniform heating environment around the reaction source container. In addition, the internal and external communication lines and/or pipes, such as the lines of the heating wires and the gas pipes going into and out of the reaction source container, need to pass through special sealing components to enter the vacuum cabinet. These constructions make the existing SDS bulky, complex in structure, and costly to manufacture and maintain. To this end, the invention proposes an improvement.

Specifically, as shown in fig. 1, the present invention provides a chemical reaction source supply system 100, the chemical reaction source supply system 100 comprising: a reaction source container 11, a heating cabinet 12, a reaction source supply line, and a first control valve 13. The reaction source container 11 is used to house a chemical reaction source, which is typically a solid source. The reaction source container 11 is disposed in the heating cabinet 12, and the inside of the heating cabinet 12 is in an atmospheric pressure environment. That is, since the heating chamber 12 and the reaction source container 11 do not operate in a vacuum state, it is not necessary to use a sealing member such as a flange for sealing the chamber and a vacuum pump for evacuating the chamber as in the conventional technique. That is, the chemical reaction source supply system provided in this embodiment is preferably not provided with a vacuum sealing device such as a vacuum pump, so that the fixing manner of various source wires penetrating inside and outside the heating cabinet is also more selected without considering the sealing problem.

The first control valve 13 is provided above the reaction source container 11 and on a reaction source supply line communicating with the reaction source container 11. In some examples, the reaction source container 11 includes a container base provided with, for example, an internal passage for placing a chemical reaction source, and a cover, and the first control valve 13 is provided, for example, on the cover and communicates to the inside of the reaction source container 11 through an inlet and outlet passage of the cover. The first control valve 13 is used to control the supply of the chemical reaction source. In the embodiment provided by the invention, the bottom valve body of the first control valve 13 is arranged inside the heating cabinet 12, and the working temperature of the bottom valve body is more than or equal to 200 ℃. And an actuator at the upper part of the first control valve 13 is disposed outside the heating cabinet 12. The actuator is used for controlling the opening and closing of the bottom valve body, and the working temperature of the actuator is less than or equal to 120 ℃. That is, the actuator of the first control valve 13 does not need to operate in a high temperature environment. This gives the first control valve 13 more options. For example, the first control valve 13 may be a relatively lower cost ALD valve. And the actuator does not work in a high-temperature environment any more, the service life and the stability of the actuator can be improved, and the system cost is reduced and the stability of the system is improved. In the existing SDS, because the control valve for controlling the supply of the reaction source is completely positioned in the high-temperature vacuum cabinet, a DH valve and other high-temperature valves are needed, and because the whole control valve is in a high-temperature working environment for a long time, the service life is reduced, and the whole use cost of the system is increased.

In this embodiment, the chemical reaction source supply system 100 further includes a heating device including a first heating unit 141 and a second heating unit 142; the first heating unit 141 is disposed in the heating cabinet 12, and is configured to heat the reaction source container 11. The second heating unit 142 is disposed outside the heating cabinet 12, and is used for heating the heating cabinet 12. By designing the heating units inside and outside the heating cabinet 12, the reaction source container 11 located inside the heating cabinet 12 can be heated uniformly and stably.

Furthermore, in this embodiment, a cooling device (not shown) is further provided outside the heating cabinet 12. The cooling device is a cooling pipeline arranged in a groove on the outer surface of the cabinet body, and the cooling pipeline can be filled with cooling media such as cooling water, cooling gas, phase change inhibiting materials and the like, or other cooling modes such as a semiconductor refrigerating sheet attached to the outer surface of the heating cabinet can be adopted. The cooling device is used for rapidly cooling the cabinet body when the reaction source container is replaced or maintained so as to ensure the operation safety.

The chemical reaction source supply system provided by the embodiment has the advantages that through the improved structural design, the whole structure is greatly simplified, the volume is obviously reduced, the use and maintenance cost can be obviously reduced, and the system installation position can be flexibly adjusted according to the production requirement because the occupied space is small, so that different process requirements in a semiconductor factory are met.

The existing SDS is large in size, and the vacuum equipment required by the SDS is matched with other factory facilities in a factory, so that the position of the SDS cannot be replaced after the SDS is designed in factory construction, and a plurality of inconveniences exist.

As described above, the heating device includes the first heating unit 141 that heats the reaction source container 11. The reaction source is preferably powder, and the kinetic energy of the reaction source molecules in the reaction source container 11 is increased by heating the reaction source container 11, and then the reaction source molecules are carried out by carrier gas such as nitrogen. And the higher the temperature is, the more small powder molecules are carried out by the carrier gas, and the more uniformly dispersed powder is beneficial to improving the deposition uniformity. In order to improve the heating uniformity of the reaction source container 11 as much as possible, the first heating unit 141 should cover the entire reaction source container 11 as much as possible. For example, in some examples, the reaction source container 11 may be placed in a constant temperature bath, but the heating temperature of the constant temperature bath is limited to hardly meet the evaporation temperature requirement of the solid source within the reaction source container 11, so in preferred examples provided by the present invention, the first heating unit 141 for heating the reaction source container 11 includes heating plates respectively contacting the bottom and top of the reaction source container 11, preferably covering the entire surface of the reaction source container 11. The heating plate may be a unitary body, for example, it may be a sleeve structure in which the reaction source container 11 is integrally disposed. The heating plate may also be formed of separate plates, for example comprising at least a portion covering the container cover. The heating plate is preferably a stainless steel plate with heating wires distributed inside, and may also be provided with a temperature control device (not shown) connected to the heating plate. In other examples, the heating medium in the heating plate may also be a fluid, such as a gas or a liquid. When the heating medium is a fluid, the reaction source container 11 is preferably placed in the first heating unit 141 by being supported by a bracket. Compared with the prior art, the heating plate with the heating wires distributed inside is used for heating, so that the whole structure of the system is simpler, and the heating temperature is easier to control.

By way of example, the second heating unit 142 includes a heating band that surrounds the entire heating cabinet 12, preferably but not limited to a flexible heating band such as a silicon tape with resistance wires disposed therein, so that the heating cabinet 12 may be more fully covered. Likewise, a temperature control device (not shown) may be provided in connection with the second heating unit 142.

The first control valve 13 controls the on-off of the chemical reaction source of the reaction source container 11, and generally includes an air inlet valve, an air outlet valve, etc., and the number thereof can be set as required, which is not strictly limited. The actuators at the upper part of the first control valves 13 are all located outside the heating cabinet 12. Therefore, the volume of the heating cabinet 12 used in the present invention can be significantly reduced compared to the design in which the valve member such as the air-operated valve is integrally located inside the heating cabinet in the prior art. Accordingly, the space in the heating cabinet 12 except the reaction source container 11 is greatly reduced, and the difficulty in maintaining the temperature stability of the internal environment of the heating cabinet 12 is significantly reduced. The heating cabinet 12 for heating the reaction source container 11 only covers the reaction source container 11 and the communication part thereof with the control valve 13 (usually only the valve body part of about 25mm-35mm below the first control valve 13), and the actuator which is not high temperature resistant in the first control valve 13 specifically comprises a valve rod, a valve rod nut, a valve clack, a pneumatic control mechanism, an electric control mechanism and other parts which are positioned at the upper part of a diaphragm of the first control valve 13, and the parts of the heating cabinet 12 are positioned outside, and the parts do not need to work in a high temperature environment, so that the first control valve 13 does not need to use a high temperature resistant valve such as a DH valve with higher cost.

In a preferred example, the first control valve 13 is preferably an ALD valve. ALD valve not only cheaper than DH valve etc. high temperature valve, but also has long service life, fast starting speed, high flow coefficient etc. and is used with hot actuator, position sensor and solenoid valve cooperation, can realize splendid performance in atomic layer deposition application occasion. Of course, the first control valve 13 is not limited thereto.

In some examples, as shown in fig. 2, the chemical reaction source supply system 100 further includes a second control valve 13a disposed on a reaction source supply line in communication with the reaction source container 11. The second control valve 13a includes, for example, a flow control valve, a pipe control valve (relief valve, check valve, shutoff valve), and the like. The arrangement of the second control valve 13a may be flexibly selected according to the type and/or function of the second control valve 13a. For example, the second control valve 13a can be arranged in the same way as the first control valve 13, i.e. the bottom valve body of the second control valve 13a is located inside the heating cabinet 12 and the upper actuator is located outside the heating cabinet 12. In this case, the first control valve 13 and the second control valve 13a may be provided in a concentrated manner, for example, provided on the same valve plate in a unified manner. The unified arrangement mode can shorten the length of the connecting pipeline, save space and is convenient for uniformly heating the lower parts of all the control valves.

In other examples, the second control valve 13a may also be located entirely outside the heating cabinet 12. When the second control valve 13a is provided outside the heating cabinet 12, the second control valve 13a may employ a non-high temperature valve, but is not limited thereto. When the second control valve 13a is provided outside the heating cabinet 12, the chemical reaction source supply system 100 may be further provided with a heating unit (not shown) for heating the second control valve 13a.

In some examples, several thermocouples (not shown) may be provided within the heating cabinet 12 to detect the temperature at various locations within the heating cabinet 12, and then optimize the heating effect by adjusting the output power of the first heating unit 141 and/or the second heating unit 142, among other devices. Before adjusting the power, software can be adopted to simulate the radiation thermal field distribution of each heating device under the preset power, and the power of the heating device is correspondingly and adaptively adjusted according to the simulation result of the thermal field distribution so as to achieve the ideal heating effect of the reaction source container in the heating cabinet.

The structure of the reaction source container 11 may be set as needed. For example, in one embodiment, the reaction source container 11 is a substantially cylindrical tank, so as to minimize resistance of the reaction source molecules during movement and avoid accumulation on the inner surface of the tank, especially at the corners of the tank. The tank body of the reaction source container 11 and the lid body for sealing the tank body may be of an integrally formed structure or may be detachably connected. For example, in the case of a removable connection, the exterior surface of the top of the can may be provided with external threads and the interior surface of the cap provided with corresponding internal threads to threadably engage the cap to the top of the can. Of course, the technical solution of the present invention is not limited thereto, and other alternative ways may be adopted for connecting the cover and the tank. In addition, sealing components such as sealing rings and the like can be arranged between the tank body and the cover body. The materials of the tank and the cover are determined according to the materials of the reaction source (the reaction source is usually a solid source), and the materials which do not react with the vapor of the reaction source or are corroded and can bear the evaporation temperature of the reaction source are required to be ensured. The materials of the cover and the can may be the same or different, and preferably the same, so that the reaction source container 11 has uniform thermal conductivity throughout. For example, the tank body and the cover body can be made of metal materials such as stainless steel, titanium alloy and the like, and the inner surface can be plated with an anti-corrosion coating. The use of the metal material not only makes the reaction source container 11 have good mechanical strength, which is convenient for long-distance transportation, but also makes the reaction source container 11 have good thermal conductivity, so that the reaction source loaded in the container can be heated by the heating device arranged outside the container. The reaction source container 11 in the single heating cabinet 12 may be single or plural. When there are plural (e.g., two or more), the plural reaction source containers 11 may be used to house the same reaction source, or each may be used to house a different reaction source having the same vaporization temperature. When a plurality of reaction source containers 11 are used to accommodate the same reaction source, the gas outlets of the plurality of reaction source containers are preferably communicated with each other, so that the vapors of different reaction source containers 11 are mixed and then delivered into the reaction chamber, which helps to improve deposition uniformity. The heating cabinet is arranged in the reaction source supply and distribution system of the invention, which not only can protect the reaction source container 11, but also can enable the placement position of the chemical reaction source supply system 100 to be more selected, and is not limited to a constant temperature environment.

In order to reduce heat transfer to the surrounding environment and improve the thermal stability of the overall system, in one example, as shown in fig. 3, the chemical reaction source supply system 100 further includes an insulating layer 15, where the insulating layer 15 is located outside the heating cabinet, near the heating belt and away from the outer surface of the heating cabinet 12. The heat insulating layer 15 may be attached to the second heating unit 142 or may be slightly spaced apart. The heat insulating layer 15 may be made of organic and/or inorganic materials, and preferably has a certain elastic soft felt or other form, so that the heat insulating layer 15 can play a role in heat insulation and also play a certain role in protecting the heating cabinet 12, for example, damage to the heating cabinet 12 caused by external impact can be reduced.

In one example, the chemical reaction source supply system 100 further includes a reflective plate 16 disposed on an inner surface of the heating cabinet 12. The reflection plate 16 may reflect heat radiation inside the heating cabinet 12 back to the reaction source vessel 11 to further improve the heating effect. The material of the reflecting plate 16 is preferably a metal material such as a stainless steel plate with a mirror-finished surface, so that the reflecting plate 16 has good impact resistance in addition to reflection. In addition, the reflection plate 16 may be grounded to eliminate environmental static electricity.

In a further example, the chemical reaction source supply system 100 may further include a heat dissipation device 17 disposed outside the heating cabinet 12 for dissipating heat from an actuator or the like having the first control valve 13 disposed outside the heating cabinet 12. The heat sink 17 includes, but is not limited to, a fan, such as a bladeless fan, located on one side of the first control valve 13. The cooling device 17 is used for cooling the first control valve 13, so that the working environment temperature of the first control valve 13 can be further reduced, for example, the temperature is ensured to be reduced to be within 120 ℃, the service life of the first control valve 13 is prolonged, and the use cost of the system is further reduced. The heat insulating layer 15 and the heat dissipating device 17 may be alternatively or simultaneously arranged.

In practical use, the reaction source may be placed inside the process equipment or may be separated by a certain distance, for example, the process equipment is usually disposed in a clean room, while for safety reasons, the reaction source container 11 may be centrally placed in a factory temperature-controlled room, so it is important to prevent the raw material vapor formed by evaporation from condensing during the transportation process. Preferably, the reaction source is provided inside the process equipment to shorten the length of the piping and reduce the risk of condensation of the steam. In an example, the heating apparatus further includes a third heating unit 143 located on the gas outlet line 113 communicating with the gas outlet of the reaction source container 11 and/or a fourth heating unit 144 for heating the carrier gas line 112 (refer to fig. 3 may be continued). The third heating unit 143 and the fourth heating unit 144 are preferably configured in the same manner as the second heating unit 142, and are, for example, flexible heating tapes such as a silicone tape having a resistance wire disposed therein. The carrier gas used may be, for example, an inert gas such as nitrogen or argon, and nitrogen having a relatively low cost is preferably used. The third heating unit 143 and the fourth heating unit 144 are arranged so that the temperature of the carrier gas introduced into the reaction source container 11 is not lower than the saturated vapor pressure of the solid source, and so that the raw gas flow does not cool down and settle during transportation. The third heating unit 143 and the fourth heating unit 144 may be connected to a temperature control device.

In an example, a plurality of temperature measuring devices, such as thermocouples, may be disposed in the heating cabinet 12, and the plurality of thermocouples are distributed at different positions of the heating cabinet 12 to measure the temperature of the corresponding area. During initial installation, the radiation thermal field distribution of each heating unit under the set power is simulated through software to adjust the output power of each heating unit, and in actual work, the heating power of each heating unit is adjusted according to the detection result of the thermocouple so as to enable the temperature in the heating cabinet 12 to reach the requirement.

The internal structure of the reaction source container 11 may be set as needed. For example, if the reaction source material has a certain volume and shape and is suitable for a fixed block or strip structure, the bottom of the reaction source container 11 may be a flat surface, and the reaction source material is tiled inside the container. With this structure, the carrier gas inlet can be arranged at a position slightly higher than the upper surface of the reaction source on the side wall of the reaction source container 11, so as to avoid the direct blowing of the carrier gas toward the reaction source. However, to increase the evaporation efficiency, the reaction source material is usually in the form of powder. To prevent carrier gas from carrying the reactant particles out of the container, in one example, the base of the reactant container 11 is provided with at least one internal channel, such as a recess 111, for receiving a chemical reactant, and the carrier gas inlet of the reactant container 11 communicates with the recess, such as a protrusion 116 between the recesses 111, so that the carrier gas outlet is naturally located above the upper surface of the reactant material. The internal channels for receiving the reaction sources may be helical grooves as shown in fig. 4, with the protrusions 116 between the grooves being provided with a number of carrier gas inlets. Of course, in other examples, the grooves may be distributed in concentric circular arcs, serpentine, or other shapes, and the grooves may be mutually communicated or not communicated, or the carrier gas inlet may be disposed outside the grooves (i.e., away from the center of the container), which is not strictly limited. However, by adopting the grooves 111 distributed in a spiral shape or in a concentric circular shape, more grooves 111 can be distributed in a limited space to accommodate the materials of the reaction source, and the heating uniformity of the reaction source can be improved. When the reaction source is placed, it is preferable to keep the reaction source in the same annular groove 111 to improve heating uniformity.

In the case of the aforementioned heating units, which use heating resistance wires, the heating wires 18 may be led out through the same outlet on the heating cabinet 12. Because the heating cabinet does not need to work in a vacuum state, the outlet of the heating wire does not need to be sealed by using sealing elements such as a vacuum flange, a sealing ring and the like, and the installation and use cost of the system can be reduced.

The chemical reaction source supply system of the present embodiment is suitable for supplying chemical reaction sources of various materials, including but not limited to hafnium sources, zirconium sources, etc. The heating temperature of each heating unit depends on the reaction source, and this is not developed in detail.

As shown in fig. 5, the present invention also provides a semiconductor processing apparatus that can be used to form a desired film layer during the manufacture of a semiconductor device. The semiconductor processing apparatus includes a process chamber 200 for semiconductor processing and a chemical reaction source supply system 100 as described in any of the above aspects. The foregoing description of the chemical reaction source supply system 100 may be referred to herein in its entirety, and is not repeated for brevity.

The process chamber 200 may be, for example, a vapor deposition chamber, more specifically, for example, an atomic layer deposition chamber, but is not limited thereto. Atomic layer deposition is a method of plating a substance onto a substrate surface layer by layer in the form of a monoatomic film, and has the advantage of high film formation quality, but the requirement on a reaction source is very high, so that the chemical reaction source supply system 100 provided by the invention is very suitable. The process chamber 200 may be single or multiple, and when the process chamber 200 is multiple, a staging chamber and/or a preheating chamber (not shown) may also be provided on the apparatus to form a cluster tool. Each process chamber 200 comprises a reaction cavity 21, an air inlet and an air outlet are arranged on the reaction cavity 21, the air inlet of the reaction cavity 21 is communicated with the air outlet of the reaction source container 11 so as to convey the reaction source gas formed by evaporation in the reaction source container 11 into the reaction cavity 21, and the air outlet of the process chamber is communicated with an exhaust pipeline. Other structures of the reaction chamber are not the focus of the invention and are not further developed.

By adopting the chemical reaction source supply system provided by the invention, the occupied space of the semiconductor processing device can be reduced, and the use and maintenance cost can be reduced.

In summary, the chemical reaction source supply system provided by the invention enables the inside of the heating cabinet to be in an atmospheric pressure environment, ensures that the reaction source container in the heating cabinet is at an ideal heating temperature through ingenious arrangement of the heating and cooling devices, and can realize uniform heating of the reaction source container under the condition that sealing components such as a vacuum pump, a flange and the like are not required by arranging the actuator at the upper part of the control valve outside the heating cabinet. The whole system has greatly simplified structure, greatly reduced volume and obviously reduced use and maintenance cost. The semiconductor processing device provided by the invention is beneficial to reducing the production cost. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. A chemical reaction source supply system, the chemical reaction source supply system comprising: a reaction source container, a heating cabinet, a reaction source supply pipeline, a first control valve, a heating device and a cooling device, wherein,

the heating device comprises a first heating unit and a second heating unit; the first heating unit is arranged in the heating cabinet and is used for heating the reaction source container; the second heating unit is arranged outside the heating cabinet and is used for heating the heating cabinet;

the cooling device is arranged outside the heating cabinet.

2. The chemical reaction source supply system of claim 1, wherein the first heating unit comprises heating plates respectively contacting the bottom and the top of the reaction source container, and the second heating unit comprises heating belts disposed outside the heating cabinet.

3. The chemical reaction source supply system of claim 2, further comprising a thermal insulation layer disposed outside the heating cabinet, proximate the heating belt and facing away from an outer surface of the heating cabinet.

4. The chemical reaction source supply system of claim 1, further comprising a reflective plate disposed on an inner surface of the heating cabinet.

5. The chemical reaction source supply system according to claim 1, further comprising a second control valve provided on a reaction source supply line communicating with the reaction source container, the second control valve being provided in the same manner as the first control valve or being disposed outside the heating cabinet.

6. The chemical reaction source supply system of claim 5, wherein the second control valve comprises a non-high temperature valve when the second control valve is disposed outside the heating cabinet, the chemical reaction source supply system further comprising a heating unit that heats the second control valve.

7. The chemical reaction source supply system of claim 1, wherein the first control valve comprises an ALD valve; the chemical reaction source supply system further comprises a heat dissipation device which is arranged outside the heating cabinet and used for dissipating heat of the actuator of the first control valve.

8. The chemical reaction source supply system according to claim 1, wherein the inside of the reaction source container is provided with at least one internal passage for accommodating a chemical reaction source, and a carrier gas inlet of the reaction source container is communicated to the internal passage.

9. A chemical reaction source supply system according to claim 1, wherein the heating means further comprises a third heating unit and/or a fourth heating unit, the third heating unit being located on an outlet pipe line communicating with the outlet port of the reaction source container, the fourth heating unit being for heating the carrier gas pipe line.

10. A semiconductor processing apparatus, characterized in that the apparatus comprises a process chamber for semiconductor processing and a chemical reaction source supply system according to any one of claims 1 to 9, wherein the process chamber is provided with an air inlet and an air outlet, the air inlet of the process chamber is communicated with the air outlet of the reaction source container, and the air outlet of the process chamber is communicated to an exhaust pipeline.