CN117558675A - Electrostatic chuck with multiple independent power supplies - Google Patents

Electrostatic chuck with multiple independent power supplies Download PDF

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Publication number
CN117558675A
CN117558675A CN202311779118.4A CN202311779118A CN117558675A CN 117558675 A CN117558675 A CN 117558675A CN 202311779118 A CN202311779118 A CN 202311779118A CN 117558675 A CN117558675 A CN 117558675A
Authority
CN
China
Prior art keywords
electrostatic chuck
negative electrode
adsorption
voltage power
electrode region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311779118.4A
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Chinese (zh)
Inventor
张劲
陈炯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xinyu Semiconductor Shanghai Co ltd
Original Assignee
Xinyu Semiconductor Shanghai Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xinyu Semiconductor Shanghai Co ltd filed Critical Xinyu Semiconductor Shanghai Co ltd
Priority to CN202311779118.4A priority Critical patent/CN117558675A/en
Publication of CN117558675A publication Critical patent/CN117558675A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention relates to an electrostatic chuck with a plurality of independent power supplies, which belongs to the technical field of semiconductor process devices, wherein the electrostatic chuck is provided with more than two groups of adsorption areas, and each group of adsorption areas comprises an anode area and a cathode area; the power supply also comprises more than two high-voltage power supplies, wherein each high-voltage power supply is provided with an anode output end and a cathode output end; in one set of adsorption regions, the positive electrode region and the negative electrode region are connected to the positive electrode output terminal and the negative electrode output terminal of the same high-voltage power supply, respectively. According to the scheme, the working plane of the electrostatic chuck is divided into a plurality of mutually independent adsorption areas, each adsorption area is connected with an independent high-voltage power supply, so that when one adsorption area or the high-voltage power supply thereof fails like high-voltage discharge and loses adsorption energy, other adsorption areas can still play a role in adsorption, the stability of adsorbing wafers is guaranteed, and wafer displacement and even falling are avoided.

Description

Electrostatic chuck with multiple independent power supplies
Technical Field
The invention belongs to the technical field of semiconductor process devices, and particularly relates to an electrostatic chuck with a plurality of independent power supplies.
Background
Electrostatic chucks are devices commonly used in semiconductor devices today that require high voltage power to generate a small current, such as 1-2 milliamps, to electrostatically attract a wafer placed thereon. The structure and principles of the existing electrostatic chuck are described in the chinese patent application publication No. CN 105374727B. In practical application, because the gap between the wafer and the electrostatic chuck is smaller, the high-voltage discharge phenomenon can occur at probability, and the existing electrostatic chuck only has one power supply, so that when the existing electrostatic chuck is damaged due to spark discharge, the electrostatic chuck can completely lose the adsorption capacity, and serious consequences such as wafer falling can be caused.
Disclosure of Invention
Based on the technical problems in the prior art, the invention provides the electrostatic chuck with a plurality of independent power supplies, solves the problem that the existing electrostatic chuck possibly fails in adsorption due to the high-voltage discharge phenomenon, and can ensure that the adsorption effect cannot completely disappear even if the discharge failure occurs, so that the wafer can be prevented from falling off and other conditions.
According to the technical scheme, the invention provides an electrostatic chuck with a plurality of independent power supplies, wherein more than two groups of adsorption areas are arranged on the electrostatic chuck, and each group of adsorption areas comprises an anode area and a cathode area; the power supply also comprises more than two high-voltage power supplies, wherein each high-voltage power supply is provided with an anode output end and a cathode output end; in one set of adsorption regions, the positive electrode region and the negative electrode region are connected to the positive electrode output terminal and the negative electrode output terminal of the same high-voltage power supply, respectively.
Preferably, the positive electrode region and the negative electrode region are spaced apart on the electrostatic chuck.
Preferably, the boundary between the adjacent positive electrode region and negative electrode region is a curved line, so that the positive electrode region and the negative electrode region form a structure surrounding each other at the adjacent place.
Preferably, the positive electrode region and the negative electrode region of the set of adsorption regions are disposed adjacently.
Preferably, the boundary line of the suction region extends outward from the center of the electrostatic chuck.
Preferably, the number of high voltage power supplies is the same as and corresponds to the number of groups of the adsorption regions one by one.
Preferably, the number of high voltage power sources and the number of groups of adsorption areas are three.
According to some embodiments, the electrostatic chuck is circular; the positive electrode areas and the negative electrode areas are distributed at intervals in the circumferential direction of the electrostatic chuck; the positive electrode area and the negative electrode area of the group of adsorption areas are adjacently arranged; the boundary between the positive electrode region and the negative electrode region extends outward from the center of the electrostatic chuck.
Further, the positive electrode region and the negative electrode region are basically identical in shape, and are concave on one side and convex on the other side on the basis of a sector with a central angle of 60 degrees.
Preferably, the electrostatic chuck is used for a scanning robot of the ion implanter, the scanning robot comprises a mechanical arm and a scanning head which are connected, and the electrostatic chuck is arranged on the scanning head.
Compared with the prior art, the invention has the following beneficial technical effects:
according to the electrostatic chuck with the multiple independent power supplies, the working plane of the electrostatic chuck is divided into the multiple independent adsorption areas, and each adsorption area is connected with the independent high-voltage power supply, so that when one adsorption area or the high-voltage power supply thereof fails, such as high-voltage discharge and loses adsorption energy, other adsorption areas can still play a role in adsorption, the stability of adsorbing wafers is ensured, and wafer displacement and even dropping are avoided.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention.
Fig. 2 is a schematic structural view of a scanning robot according to an embodiment of the present invention.
Reference numerals in the drawings illustrate: 1. an electrostatic chuck; 2. a positive electrode region; 3. a negative electrode region; 4. a mechanical arm; 5. a scanning head.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. Embodiments of the invention and features of the embodiments may be combined with each other without conflict.
It should be noted that the terms "first," "second," and the like herein are merely used for distinguishing between different devices, modules, or units and not for limiting the order or interdependence of the functions performed by such devices, modules, or units.
It should be noted that references to "one", "a plurality" and "a plurality" in this disclosure are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that "one or more" is intended to be construed as "one or more" unless the context clearly indicates otherwise.
The invention provides an electrostatic chuck with a plurality of independent power supplies, which solves the problem that the existing electrostatic chuck is likely to fail in adsorption due to high-voltage discharge phenomenon, and can ensure that the adsorption effect is not completely disappeared even if discharge failure occurs, so that the situation that a wafer falls off and the like can be avoided.
Referring to fig. 1, an electrostatic chuck with multiple independent power sources according to an embodiment of the present invention has more than two groups of adsorption regions on the electrostatic chuck 1, each group of adsorption regions including a positive electrode region 2 and a negative electrode region 3. The high-voltage power supply also comprises more than two high-voltage power supplies, and each high-voltage power supply is provided with a positive electrode output end and a negative electrode output end. In one set of adsorption regions, the positive electrode region and the negative electrode region are connected to the positive electrode output terminal and the negative electrode output terminal of the same high-voltage power supply, respectively. In other words, on one high voltage power supply, the positive output is connected to the positive electrode region 2 of one or more groups of adsorption regions, and the negative output is connected to the negative electrode region 3 of the same group; only one group of high-voltage power supplies can supply power to a plurality of groups of adsorption areas simultaneously. The invention has the main core points that a plurality of (i.e. two or more) independent power supplies are adopted to supply power to different areas of one electrostatic chuck, so that the situation that the wafer falls off due to high-voltage discharge of one area is prevented, when one power supply or an adsorption area fails, other adsorption areas can still adsorb the wafer to avoid falling off, and the waste of the wafer is reduced. Especially for some advanced semiconductor processes at present, the cost of the wafer is very high, and the adoption of the scheme can relieve the concern of production enterprises, so that the semiconductor equipment or the components adopting the scheme can also improve the competitiveness in the industry, and have extremely high practical significance and commercial value.
According to some embodiments, the positive electrode region 2 and the negative electrode region 3 are distributed at intervals on the electrostatic chuck. Further, the boundary between the adjacent positive electrode region 2 and negative electrode region 3 is a curved line, so that the positive electrode region 2 and negative electrode region 3 are formed to surround each other at adjacent positions. Under the action of a high-voltage power supply, positive charges are distributed in the positive electrode region 2, negative charges are distributed in the negative electrode region 3, the positive electrode region 2 and the negative electrode region 3 are close to each other, and the strength of adsorption force can be ensured according to the principle of electrostatic adsorption. The special shape that the dividing line is curved is further adopted, and compared with the regular shape, the shortest distance between positive charges and negative charges everywhere in the area is closer, so that stable adsorption is facilitated. Of course, the adjacent positive electrode region 2 and negative electrode region 3 are not in conductive contact with each other, and may be provided with a gap or an insulating material. Preferably, the positive electrode region 2 and the negative electrode region 3 of one set of adsorption regions (i.e., connected to the same high-voltage power supply) are disposed adjacently, so that design and installation are facilitated, and the like.
According to some embodiments, the boundary of the attraction zones extends from the center of the electrostatic chuck 1 to the outside, for example, for a circular electrostatic chuck 1, the attraction zones are distributed in a substantially fan shape. Each of the positive electrode region 2 or the negative electrode region 3 is a plate-like thin electrode so as to form an overall positive or negative electricity in one region after power is turned on. In other embodiments, the positive electrode region 2 and the negative electrode region 3 of the adsorption region have other shapes and arrangements, such as concentric distribution, etc. It should be noted that, the concentric circles may cause different forces of electrostatic adsorption along with different radii, so the uniformity of the forces in each region is poor; the scheme preferably adopts a sector-shaped partition design, is more uniform in distribution and is very little in interference from different power supplies, so that acting force is more uniform and stable.
According to some embodiments, the number of high voltage power sources is the same as and corresponds to one-to-one to the number of groups of adsorption regions, in other words, one high voltage power source connects only one positive electrode region 2 and one negative electrode region 3 of one group. Further, for example, the number of high voltage power supplies and the number of groups of adsorption regions are three. Such a preferred arrangement ensures that adequate adsorption is provided in the event of a fault, while the structural complexity is low.
More specifically, in the embodiment shown in fig. 1, the electrostatic chuck 1 is circular and is configured to carry a circular wafer. The positive electrode region 2 and the negative electrode region 3 are distributed at intervals in the circumferential direction of the electrostatic chuck 1. The boundary between the positive electrode region 2 and the negative electrode region 3 extends outward from the center of the electrostatic chuck 1, and the working plane of the electrostatic chuck 1 is divided into three groups of adsorption regions, and is divided into six regions (positive electrode region 2 and negative electrode region 3) substantially uniformly, and three high-voltage power supplies are connected. The positive electrode area 2 and the negative electrode area 3 of the adsorption area are adjacently arranged and are connected with the same high-voltage power supply; therefore, if one adsorption area has high-voltage discharge faults, the influence of the faults can be controlled within the range of about one third of the circumference, and the wafer can be adsorbed in the range of the other two thirds of the circumference, so that the wafer is prevented from falling. Further, the positive electrode region 2 and the negative electrode region 3 are basically the same in shape, and are in a special curved shape on the basis of a sector with a central angle of 60 degrees, and one side is concave and the other side is convex, so that the shortest distance between positive charges and negative charges in each region is closer to that in the regular sector, and stable adsorption is facilitated.
In addition, in the middle part of the sector-shaped partition shown in fig. 1, a square and strip-shaped splicing pattern mode is adopted, specifically, for example, strip-shaped areas extending upwards are arranged at the middle ends of four areas at the lower part and are arranged side by side, and the four strip-shaped areas are symmetrically surrounded by the middle ends of two areas at the upper part; the contours of each of the positive electrode region 2 and the negative electrode region 3 form a closed loop, which facilitates wiring and also better insulates the regions from each other.
The solution of the present invention is preferably used for a scanning robot of an ion implanter, for example, as shown in fig. 2, the scanning robot includes a mechanical arm 4 and a scanning head 5 connected, and the electrostatic chuck 1 is disposed on the scanning head 5. The scanning robot is arranged in a process cavity of the ion implanter, the mechanical arm 4 is connected with the cavity, and the mechanical arm 4 can control the electrostatic chuck 1 to move and turn over, so that scanning implantation of wafers and the like are realized. The backside of the electrostatic chuck 1 is connected with a cable, the inside of the mechanical arm 4 and the scanning head 5 is a hollow structure, and the cable is arranged in the hollow structure and is further connected to a high-voltage power supply and a control system. The scanning robot needs to fix the wafer through the electrostatic chuck 1, erect the wafer and then move, so that the adsorption stability is particularly important, and the situation that the wafer is displaced or even falls due to high-voltage discharge can be avoided by adopting the scheme.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. An electrostatic chuck with a plurality of independent power supplies is characterized in that the electrostatic chuck is provided with more than two groups of adsorption areas, and each group of adsorption areas comprises a positive electrode area and a negative electrode area;
the power supply also comprises more than two high-voltage power supplies, wherein each high-voltage power supply is provided with an anode output end and a cathode output end;
in one set of adsorption regions, the positive electrode region and the negative electrode region are connected to the positive electrode output terminal and the negative electrode output terminal of the same high-voltage power supply, respectively.
2. The electrostatic chuck of claim 1, wherein the positive and negative electrode regions are spaced apart on the electrostatic chuck.
3. The electrostatic chuck of claim 2, wherein the parting line between adjacent positive and negative electrode regions is a curved line, such that the positive and negative electrode regions form a mutually enclosed structure adjacent to each other.
4. The electrostatic chuck of claim 1, wherein the positive and negative electrode regions of a set of clamping regions are disposed adjacent to each other.
5. The electrostatic chuck of claim 1, wherein the dividing line of the chucking zone extends outwardly from a center of the electrostatic chuck.
6. The electrostatic chuck of claim 1, wherein the number of high voltage power supplies is the same as and one-to-one correspondence to the number of groups of suction areas.
7. The electrostatic chuck of claim 6, wherein the number of high voltage power supplies and the number of groups of chucking zones are each three.
8. The electrostatic chuck of claim 7, wherein the electrostatic chuck is circular; the positive electrode areas and the negative electrode areas are distributed at intervals in the circumferential direction of the electrostatic chuck; the positive electrode area and the negative electrode area of the group of adsorption areas are adjacently arranged; the boundary between the positive electrode region and the negative electrode region extends outward from the center of the electrostatic chuck.
9. The electrostatic chuck of claim 8, wherein the positive and negative electrode regions are substantially identical in shape, each having a concave side and a convex side on the basis of a fan shape having a 60 degree central angle.
10. An electrostatic chuck with multiple independent power supplies according to any of claims 1-9, characterized in that it is used for a scanning robot of an ion implanter, the scanning robot comprising a robot arm and a scanning head connected, the electrostatic chuck being arranged on the scanning head.
CN202311779118.4A 2023-12-22 2023-12-22 Electrostatic chuck with multiple independent power supplies Pending CN117558675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311779118.4A CN117558675A (en) 2023-12-22 2023-12-22 Electrostatic chuck with multiple independent power supplies

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311779118.4A CN117558675A (en) 2023-12-22 2023-12-22 Electrostatic chuck with multiple independent power supplies

Publications (1)

Publication Number Publication Date
CN117558675A true CN117558675A (en) 2024-02-13

Family

ID=89814825

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311779118.4A Pending CN117558675A (en) 2023-12-22 2023-12-22 Electrostatic chuck with multiple independent power supplies

Country Status (1)

Country Link
CN (1) CN117558675A (en)

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