CN117555168A - On-chip integrated magneto-optical isolator - Google Patents
On-chip integrated magneto-optical isolator Download PDFInfo
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- CN117555168A CN117555168A CN202410031738.8A CN202410031738A CN117555168A CN 117555168 A CN117555168 A CN 117555168A CN 202410031738 A CN202410031738 A CN 202410031738A CN 117555168 A CN117555168 A CN 117555168A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
- G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
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Abstract
The application relates to an on-chip integrated magneto-optical isolator, wherein the on-chip integrated magneto-optical isolator comprises: an incident waveguide array for inputting light of at least one wavelength; the magneto-optical isolator is connected with the incident waveguide array and is used for realizing forward transmission and reverse isolation of light; the magneto-optical isolator comprises an array waveguide grating, a magneto-optical film and a magnetic field applying device; the magneto-optical film is arranged on the surface of the array waveguide grating, the light with at least one wavelength propagates in the array waveguide grating, and the magnetic field applying device is used for applying a magnetic field perpendicular to the light transmission direction of the array waveguide grating; the emergent waveguide array connected with the magneto-optical isolator is used for outputting light with at least one wavelength, has the functions of forward transmission and reverse isolation of light waves, can meet the link application of the wavelength range up to hundred nanometers, and improves the isolation effect of the light, thereby realizing the protection effect on the laser.
Description
Technical Field
The present application relates to the technical field of silicon-based optoelectronic devices, and in particular to an on-chip integrated magneto-optical isolator.
Background
On-chip integrated magneto-optical isolator is an indispensable important component in the field of silicon-based optoelectronic devices. In the optical transmission link, the characteristic of only allowing unidirectional transmission can filter out reflected light generated by mode mismatch or waveguide roughness and the like at all parts of the link, and the stability of the transmission of the whole link can be greatly improved.
Optical isolators are commonly used in semiconductor laser back ends to protect the laser from reflected light in the link, thereby improving the life of the laser and the stability of the overall optical system. In multi-wavelength link applications, it is often desirable for the isolator to have a large bandwidth to achieve the optical isolation function of multiple waveguides. However, the bandwidth of the on-chip magneto-optical isolator prepared based on the Mach-Zehnder interferometer (MZI, mach-Zehnder interferometer) configuration is still in the range of a few nanometers, and the application of related broadband link multi-wavelength multiplexing is difficult to meet.
Disclosure of Invention
Based on this, it is necessary to provide an on-chip integrated magneto-optical isolator in view of the above technical problems.
In a first aspect, embodiments of the present application provide an on-chip integrated magneto-optical isolator comprising:
an incident waveguide array for inputting light of at least one wavelength;
the magneto-optical isolator is connected with the incident waveguide array and is used for realizing forward transmission and reverse isolation of light; the magneto-optical isolator comprises an array waveguide grating, a magneto-optical film and a magnetic field applying device; the magneto-optical film is arranged on the surface of the array waveguide grating, the light with at least one wavelength propagates in the array waveguide grating, and the magnetic field applying device is used for applying a magnetic field perpendicular to the light transmission direction of the array waveguide grating;
and the emergent waveguide array is connected with the magneto-optical isolator and is used for outputting light with all the incident wavelengths.
In one embodiment, the arrayed waveguide grating comprises a plurality of waveguides, a plurality of magneto-optical waveguides are formed by depositing or bonding the magneto-optical film on each of the waveguides, and the lengths of the magneto-optical waveguides are sequentially increased in multiple;
the magnetic field applying device is positioned at two sides of the arrayed waveguide grating and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
In one embodiment, the arrayed waveguide grating comprises a plurality of waveguides, the magneto-optical isolator further comprises a transparent film, the transparent film is arranged on the surface of the arrayed waveguide grating, and the refractive index of the transparent film is the same as that of the magneto-optical film;
sequentially depositing or bonding the magneto-optical films on the waveguides from inside to outside by taking a central waveguide of the array waveguide grating as a symmetry axis to form a plurality of magneto-optical waveguides, sequentially increasing the length of each magneto-optical film by a multiple with the central waveguide as the symmetry axis, and depositing or bonding the transparent films on the waveguides from inside to outside, wherein the length of each transparent film sequentially decreases by a multiple with the central waveguide as the symmetry axis, and the total length of the magneto-optical films on each waveguide is equal to the total length of the transparent film;
the magnetic field applying device is positioned at the center of the arrayed waveguide grating, and uses the central waveguide as a symmetrical axis to externally apply two magnetic fields perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
In one embodiment, the arrayed waveguide grating comprises a plurality of waveguides, the magneto-optical isolator further comprises a transparent film, the transparent film is arranged on the surface of the arrayed waveguide grating, and the refractive index of the transparent film is the same as that of the magneto-optical film;
sequentially depositing or bonding the magneto-optical films on the waveguides from inside to outside by taking a central waveguide of the array waveguide grating as a symmetry axis to form a plurality of magneto-optical waveguides, sequentially increasing the length of each magneto-optical film by a multiple with the central waveguide as the symmetry axis, and depositing or bonding the transparent films on the waveguides from inside to outside, wherein the length of each transparent film sequentially decreases by a multiple with the central waveguide as the symmetry axis, and the total length of the magneto-optical films on each waveguide is equal to the total length of the transparent film;
the magnetic field applying device is positioned at two sides of the arrayed waveguide grating and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
In one embodiment, the magneto-optical isolator further includes a first free transmission area unit and a second free transmission area unit, the light with at least one wavelength is input by the incident waveguide array, is divided into a plurality of beams of light after being transmitted by the first free transmission area unit, enters the arrayed waveguide grating, is transmitted for a certain distance, enters the second free transmission area unit, and is output from the emergent waveguide array after being transmitted.
In one embodiment, the length of each waveguide in the arrayed waveguide grating satisfies a fixed length difference.
In one embodiment, the magneto-optical film includes, but is not limited to, rare earth doped yttrium iron garnet.
In one embodiment, the transparent film is a material with a loss of light below a preset value in the working band of the magneto-optical isolator, including but not limited to doped silicon nitride, chalcogenide glass and polymer macromolecule.
In one embodiment, the magnetic field applying device includes, but is not limited to, a permanent magnet, a charged coil.
In one embodiment, the magneto-optical isolator further comprises a light splitting device for splitting incident light into a plurality of wavelengths of light; the input end of the light splitting device is used for receiving the incident light, and the output end of the light splitting device is connected with the incident waveguide array and used for outputting the light with the multiple wavelengths to the incident waveguide array.
The on-chip integrated magneto-optical isolator comprises: an incident waveguide array for inputting light of at least one wavelength; the magneto-optical isolator is connected with the incident waveguide array and is used for realizing forward transmission and reverse isolation of light; the magneto-optical isolator comprises an array waveguide grating, a magneto-optical film and a magnetic field applying device; the magneto-optical film is arranged on the surface of the array waveguide grating, the light with at least one wavelength propagates in the array waveguide grating, and the magnetic field applying device is used for applying a magnetic field perpendicular to the light transmission direction of the array waveguide grating; the emergent waveguide array is connected with the magneto-optical isolator and is used for outputting light with at least one wavelength, has the functions of forward transmission and reverse isolation of light waves, and can meet the application of the wavelength range up to hundred nanometers according to the on-chip integrated magneto-optical isolator, improve the isolation effect of light and realize the protection effect on a laser.
The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below to provide a more thorough understanding of the other features, objects, and advantages of the application.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute an undue limitation to the application. In the drawings:
FIG. 1 is a schematic diagram of an application environment for an on-chip integrated magneto-optical isolator in one embodiment;
FIG. 2 is a schematic diagram of an on-chip integrated magneto-optical isolator in one embodiment;
FIG. 3 is a schematic diagram of an on-chip integrated magneto-optical isolator in another embodiment;
FIG. 4 is a schematic diagram of an on-chip integrated magneto-optical isolator in another embodiment;
FIG. 5 is a schematic diagram of an on-chip integrated magneto-optical isolator in another embodiment;
FIG. 6 is a side view of a magneto-optical waveguide of a magneto-optical isolator in one embodiment;
FIG. 7 is a plot of the amount of non-reciprocal phase shift phase versus insertion loss and isolation of an on-chip integrated magneto-optical isolator in one embodiment;
FIG. 8 is a graph of forward and reverse transmission curves of an on-chip integrated single wavelength magneto-optical isolator in one embodiment;
FIG. 9 is a graph of forward and reverse transmission curves of an on-chip integrated four-wavelength magneto-optical isolator in one embodiment;
FIG. 10 is a schematic diagram of an on-chip integrated magneto-optical isolator in another embodiment.
102, a laser; 104. an optical isolator; 106. a detector; 20. an incident waveguide array; 30. a magneto-optical isolator; 40. an exit waveguide array; 31. an arrayed waveguide grating; 32. a magnetic field applying device; 50. and a spectroscopic device.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described and illustrated below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden on the person of ordinary skill in the art based on the embodiments provided herein, are intended to be within the scope of the present application.
It is apparent that the drawings in the following description are only some examples or embodiments of the present application, and it is possible for those of ordinary skill in the art to apply the present application to other similar situations according to these drawings without inventive effort. Moreover, it should be appreciated that while such a development effort might be complex and lengthy, it would nevertheless be a routine undertaking of design, fabrication, or manufacture for those of ordinary skill having the benefit of this disclosure, and thus should not be construed as having the benefit of this disclosure.
Reference in the specification to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is to be expressly and implicitly understood by those of ordinary skill in the art that the embodiments described herein can be combined with other embodiments without conflict.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. Reference to "a," "an," "the," and similar terms herein do not denote a limitation of quantity, but rather denote the singular or plural. The terms "comprising," "including," "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, article, or apparatus that comprises a list of steps or modules (elements) is not limited to only those steps or elements but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus. The terms "connected," "coupled," and the like in this application are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The term "plurality" as used herein refers to two or more. "and/or" describes an association relationship of an association object, meaning that there may be three relationships, e.g., "a and/or B" may mean: a exists alone, A and B exist together, and B exists alone. The character "/" generally indicates that the context-dependent object is an "or" relationship. The terms "first," "second," "third," and the like, as used herein, are merely distinguishing between similar objects and not representing a particular ordering of objects.
The on-chip integrated magneto-optical isolator provided by the application can be applied to a multi-wavelength long-chain application environment shown in figure 1. The multi-wavelength long-chain path mainly comprises three parts, wherein the first part is formed by arranging semiconductor lasers 102 in an array manner, and the output wavelengths of the arrays of the lasers 102 are lambda respectively 1 、λ 2 …，λ N Light of N different wavelengths is coupled into the silicon optical chip via an on-chip coupling structure; the second part is an optical isolator 104, and N lights with different wavelengths are converged into a single channel to be output and transmitted to a detector 106 after being input through one end of the optical isolator 104.
The embodiment of the application provides an on-chip integrated magneto-optical isolator, as shown in fig. 2, the on-chip integrated magneto-optical isolator sequentially comprises: an incident waveguide array 20, a magneto-optical isolator 30, and an exit waveguide array 40.
The incident waveguide array 20 is used for inputting light of at least one wavelength; a magneto-optical isolator 30 connected to the incident waveguide array 20 for effecting forward transmission and reverse isolation of light; the magneto-optical isolator 30 comprises an arrayed waveguide grating 31, a magneto-optical film and a magnetic field applying device 32; wherein the magneto-optical film is on the surface of the arrayed waveguide grating 31, the light with at least one wavelength propagates in the arrayed waveguide grating 31, and the magnetic field applying device 32 is configured to apply a magnetic field perpendicular to the light transmission direction of the arrayed waveguide grating 31; an exit waveguide array 40 coupled to the magneto-optical isolator 30 is configured to output light of the at least one wavelength.
The incident waveguide array 20 is formed by one or N waveguides and cladding layers, the structure of which should satisfy the condition of supporting the single-mode transmission of light, and the exit waveguide array 40 is formed by one or N waveguides and cladding layers, the structure of which should satisfy the condition of supporting the single-mode transmission of light. The waveguide core layers of the incident waveguide array 20 and the emergent waveguide array 40 are made of the same material, the cladding layers are made of the same material, the number and the geometric dimensions of the waveguides can be the same or different, and the refractive index of the material of the waveguide core layers is larger than that of the material of the cladding layers.
The magneto-optical isolator in the embodiment of the application realizes the functions of forward transmission and reverse isolation of light waves, thereby realizing the protection effect on a laser. Compared with the related on-chip magneto-optical isolator, the method can solve the defect of narrow application bandwidth of the existing on-chip integrated magneto-optical isolator, can meet the application scene of multiple wavelengths, such as a multi-channel transmission technology in a wavelength division multiplexing system, can expand the application bandwidth to be within hundred nanometers, can meet the link application of the wavelength range up to hundred nanometers, and has wider application prospect in the link of the wavelength division multiplexing system.
In one embodiment, the arrayed waveguide grating comprises a plurality of waveguides, a plurality of magneto-optical waveguides are formed by depositing or bonding the magneto-optical film on each of the waveguides, and the lengths of the magneto-optical waveguides are sequentially increased in multiple; the magnetic field applying device is positioned at two sides of the arrayed waveguide grating and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
Specifically, the magneto-optical waveguide is composed of a waveguide and a magneto-optical film positioned on the waveguide, and the magneto-optical film and the waveguide can be in direct contact or a dielectric layer with a certain thickness exists between the magneto-optical film and the waveguide, and the thinner the dielectric layer is, the better the thickness is. As shown in fig. 3, the arrayed waveguide grating includes m waveguides, a magneto-optical film material with a certain thickness is deposited/bonded above the waveguides in the central area of the arrayed waveguide grating, and distributed and arranged according to a certain length, the magneto-optical waveguide length is increased by multiple from bottom to top, if the required shortest magneto-optical waveguide length is L1, the lengths of the m magneto-optical waveguides from bottom to top are L1, 2×l1, 3×l … m×l1 respectively, and the functions of forward transmission and reverse isolation of light waves are realized under the action of an external unidirectional magnetic field.
In one embodiment, the arrayed waveguide grating comprises a plurality of waveguides, the magneto-optical isolator further comprises a transparent film, the transparent film is arranged on the surface of the arrayed waveguide grating, and the refractive index of the transparent film is the same as that of the magneto-optical film.
The distribution of magneto-optical film materials in the arrayed waveguide grating area is shown in fig. 4, the arrayed waveguide grating is composed of m waveguides, the central waveguide of the arrayed waveguide grating is used as a symmetrical axis, a plurality of magneto-optical waveguides are formed by depositing or bonding the magneto-optical films on the waveguides from inside to outside in sequence, the length of each magneto-optical film is increased in multiple in sequence by taking the central waveguide as the symmetrical axis, the transparent film is deposited or bonded on the waveguides from inside to outside to form an index matching area, the length of each transparent film is decreased in multiple in sequence by taking the central waveguide as the symmetrical axis, and the total length of the magneto-optical film on each waveguide is equal to the total length of the transparent film. The magnetic field applying device is positioned at the center of the array waveguide grating, and applies two magnetic fields perpendicular to the light transmission directions of the plurality of magneto-optical waveguides upwards and downwards by taking the central waveguide as a symmetrical axis.
Specifically, the central array waveguide is free of magneto-optical film materials, the magneto-optical waveguide lengths on two sides of the central array waveguide are L2, and the magneto-optical waveguide lengths from inside to outside are L2, 2 xL 2, 3 xL 2 … (m-1)/2 xL 2 respectively. In order to realize the condition that the phase difference of the array waveguide is integral multiple, a material which has the same refractive index as that of the magneto-optical film material needs to be additionally introduced. In each array waveguide, the length of the index matching region should be complementary to the magneto-optical waveguide length. Under the action of an externally-applied push-pull magnetic field, the forward transmission and reverse isolation of light waves are realized.
In some embodiments, the transparent film material has an index of refraction equal to or near that of the magneto-optical film material. The effective refractive indexes of the magneto-optical waveguide and the refractive index matching waveguide are equal or close, and the matching of the effective refractive indexes can be realized by changing the refractive index or the size of the transparent film material, such as changing the thickness of the transparent film material, and the like.
In one embodiment, to simplify the direction of the applied magnetic field, the distribution of the magneto-optical waveguides and the refractive index matching regions may also be as shown in fig. 5, where the magnetic field applying device is located at two sides of the arrayed waveguide grating, and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
Fig. 3 to 5 show the case of N entrance ports and 1 exit port. In fig. 3 to 5, when no external magnetic field is applied, the phase difference between the array waveguides 1 and 2 … m is ΔΦ; when a forward magnetic field is applied, the phase difference between the array waveguides 1 and 2 … m is delta phi-delta phi mo; when a reverse magnetic field is applied, the phase difference between the array waveguides 1 and 2 … m is delta phi+delta phi mo; in other words, when light is transmitted in the forward direction (i.e. when light is input from the incident port and output from the emergent port) in the fixed magnetic field direction, the phase difference between the array waveguides 1 and 2 … m is Δφ - Δφmo; when light is transmitted in reverse (i.e., when light is input from the exit port and output from the entrance port), the phase difference between the arrayed waveguides 1, 2 … m is ΔΦ+ΔΦmo.
Fig. 6 shows a side view of a magneto-optical waveguide with the direction of the applied magnetic field perpendicular to the direction of transmission of the optical waveguide. When light is transmitted along the +z direction, the propagation constant of the magneto-optical waveguide is recorded as beta f; when light is transmitted along the-z direction, the propagation constant of the magneto-optical waveguide is recorded as beta b; the difference between the propagation constants is recorded as NRPS, and the calculation formula is as follows:
wherein,βis a propagation constant;ωis the optical frequency; epsilon 0 Is vacuum dielectric constant;Sis the energy flow in the light propagation direction (z direction);γa non-diagonal element of the dielectric constant tensor of the magneto-optical material;n 0 refractive index of magneto-optical material;H x is a horizontal component of the magnetic field in the light field;is the partial derivative in the vertical direction.
In one embodiment, the magneto-optical isolator further includes a first free transmission area unit and a second free transmission area unit, the light with at least one wavelength is input by the incident waveguide array, is divided into a plurality of beams of light after being transmitted by the first free transmission area unit, enters the arrayed waveguide grating, is transmitted for a certain distance, enters the second free transmission area unit, and is output from the emergent waveguide array after being transmitted.
In one embodiment, the length of each waveguide in the arrayed waveguide grating satisfies a fixed length difference to satisfy a fixed phase difference.
In one embodiment, the magneto-optical film includes, but is not limited to, rare earth doped yttrium iron garnet.
In one embodiment, the transparent film is a material with a loss of light below a preset value in the working band of the magneto-optical isolator, including but not limited to doped silicon nitride, chalcogenide glass and polymer macromolecule.
In one embodiment, the incident waveguide array is comprised of one or more waveguides and cladding layers, and the exit waveguide array is comprised of one or more waveguides and cladding layers. The material of the waveguide can be, but not limited to, silicon nitride, germanium, lithium niobate, chalcogenide glass or other combinations, and the material of the cladding layer can be, but not limited to, silicon dioxide, silicon nitride, high molecular polymer or other combinations, and the refractive index of the waveguide material is only required to be larger than that of the cladding layer, the magneto-optical film material is rare earth doped yttrium iron garnet, and the transparent film material can be doped materials which have the loss of middle infrared band lower than a preset value and are matched with the refractive index of the magneto-optical film material, such as doped silicon nitride, chalcogenide glass and the like. In some embodiments, the material of the waveguide is silicon nitride and the material of the cladding layer is silicon dioxide. The type of waveguide is not particularly limited, and any suitable type may be employed, and as a non-limiting example, the waveguide may be a rectangular waveguide, a ridge waveguide, or the like.
In one embodiment, the magnetic field applying device includes, but is not limited to, a permanent magnet, a charged coil. The external magnetic field can be provided by a permanent magnet or can be realized by generating an induced magnetic field by an electrified wire integrated on the optical chip, and the magnetic field needs to magnetize the magneto-optical film material to a saturated state in the plane.
FIG. 7 provides exemplary simulation results for an on-chip integrated single wavelength magneto-optical isolator of an embodiment of the present application. Taking C-band application as an example, the width of the silicon nitride waveguide is 1000nm and the thickness is 400nm, the first free transmission region and the second free transmission region are in confocal configuration (Confocal configuration) or rowland-circle configuration (Rowland configuration), the length of the first free transmission region or the second free transmission region (Free Propagation region, FPR) is 20.9 μm, and the number of arrayed waveguides m=11. Fig. 7 shows the non-reciprocal phase shift amount (abscissa) versus insertion loss (left ordinate) and isolation (right ordinate) of the single wavelength magneto-optical isolator device. The device insertion loss and the increase of the nonreciprocal phase shift amount are in a linear increasing trend, the extinction ratio of the device is increased along with the increase of the nonreciprocal phase shift amount, and the extinction ratio tends to be stable when the phase shift amount reaches about 60 degrees. The insertion loss of the device mainly comes from the absorption loss of the magneto-optical film material in the near infrared band. The magneto-optical film material in the simulation is cerium-doped yttrium iron garnet (Ce-substitutedYttrium Iron Garnets, ce: YIG), the magneto-optical Faraday rotation angle of which at the wavelength of 1550nm is 5900 DEG/cm, and the optical loss is 137dB/cm. Fig. 7 shows that the amount of non-reciprocal phase shift required is 50 deg. when the extinction ratio is 30dB, with an overall insertion loss of the device of 2dB.
FIG. 8 provides a forward transmission curve and a reverse transmission curve of the on-chip integrated single-wavelength magneto-optical isolator in the embodiment of the application, wherein the transmittance of the device in forward transmission is-1.98 dB and the transmittance in reverse transmission is-31.1 dB when the wavelength is 1551nm, so that the forward passing and reverse isolation effects of light are realized.
FIG. 9 provides exemplary simulation results for an on-chip integrated multi-wavelength magneto-optical isolator of an embodiment of the present application. Taking the C wave band application as an example, wavelengths are respectively λ1=1512 nm, λ2=1532 nm, λ3=1552 nm and λ4=1572 nm, the transmittance in forward transmission is respectively-3.4 dB, -1.1dB, -1.3dB, -3.3dB, the transmittance in reverse transmission is-12.0 dB, -9.6dB, -8.7dB, -3.3dB, and thus the forward passing and reverse isolation effects of light under the condition of multiple wavelengths are realized. The insertion loss and extinction ratio do not represent the final performance of the device, and the improvement of the extinction ratio and the non-uniformity of the insertion loss can be achieved by further optimizing the parameters such as the number of array waveguides in the magneto-optical isolator, the length of the FPR, the spacing between the array waveguides, etc., and fig. 8 and 9 only use the array wave derivative m=11 as an example.
In one embodiment, as shown in fig. 10, the magneto-optical isolator further includes a light splitting device 50, where the light splitting device 50 is configured to split incident light into light with multiple wavelengths; the input end of the light splitting device 50 is configured to receive the incident light, and the output end of the light splitting device 50 is connected to the incident waveguide array 20 and configured to output the light with the multiple wavelengths to the incident waveguide array 20.
The on-chip integrated magneto-optical isolator of the present application may be used with the optical splitter 50 to form a broadband magneto-optical isolator of a single input waveguide, and fig. 10 shows only one structure of the optical splitter 50, where the optical splitter 50 of the present application includes but is not limited to arrayed waveguide gratings, echelle gratings, and other structures. The number of waveguides n in the spectroscopic assembly 50 may be the same as or different from the number of waveguides m of the on-chip integrated magneto-optical isolator.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. An on-chip integrated magneto-optical isolator, comprising:
an incident waveguide array for inputting light of at least one wavelength;
the magneto-optical isolator is connected with the incident waveguide array and is used for realizing forward transmission and reverse isolation of light; the magneto-optical isolator comprises an array waveguide grating, a magneto-optical film and a magnetic field applying device; the magneto-optical film is arranged on the surface of the array waveguide grating, the light with at least one wavelength propagates in the array waveguide grating, and the magnetic field applying device is used for applying a magnetic field perpendicular to the light transmission direction of the array waveguide grating;
and the emergent waveguide array is connected with the magneto-optical isolator and is used for outputting light with at least one wavelength.
2. The on-chip integrated magneto-optical isolator of claim 1, wherein the arrayed waveguide grating comprises a plurality of waveguides, a plurality of magneto-optical waveguides being formed by depositing or bonding the magneto-optical film on each of the waveguides, the length of each of the magneto-optical waveguides being sequentially increased by a multiple;
the magnetic field applying device is positioned at two sides of the arrayed waveguide grating and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
3. The integrated magneto-optical isolator on a chip of claim 1, wherein the arrayed waveguide grating comprises a plurality of waveguides, the magneto-optical isolator further comprising a transparent film disposed on a surface of the arrayed waveguide grating, the transparent film having a refractive index that is the same as a refractive index of the magneto-optical film;
sequentially depositing or bonding the magneto-optical films on the waveguides from inside to outside by taking a central waveguide of the array waveguide grating as a symmetry axis to form a plurality of magneto-optical waveguides, sequentially increasing the length of each magneto-optical film by a multiple with the central waveguide as the symmetry axis, and depositing or bonding the transparent films on the waveguides from inside to outside, wherein the length of each transparent film sequentially decreases by a multiple with the central waveguide as the symmetry axis, and the total length of the magneto-optical films on each waveguide is equal to the total length of the transparent film;
the magnetic field applying device is positioned at the center of the arrayed waveguide grating, and uses the central waveguide as a symmetrical axis to externally apply two magnetic fields perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
4. The integrated magneto-optical isolator on a chip of claim 3, wherein the arrayed waveguide grating comprises a plurality of waveguides, the magneto-optical isolator further comprising a transparent film disposed on a surface of the arrayed waveguide grating, the transparent film having a refractive index that is the same as a refractive index of the magneto-optical film;
sequentially depositing or bonding the magneto-optical films on the waveguides from inside to outside by taking a central waveguide of the array waveguide grating as a symmetry axis to form a plurality of magneto-optical waveguides, sequentially increasing the length of each magneto-optical film by a multiple with the central waveguide as the symmetry axis, and depositing or bonding the transparent films on the waveguides from inside to outside, wherein the length of each transparent film sequentially decreases by a multiple with the central waveguide as the symmetry axis, and the total length of the magneto-optical films on each waveguide is equal to the total length of the transparent film;
the magnetic field applying device is positioned at two sides of the arrayed waveguide grating and applies a magnetic field perpendicular to the light transmission directions of the plurality of magneto-optical waveguides.
5. The integrated magneto-optical isolator of claim 1, further comprising a first free transmission area unit and a second free transmission area unit, wherein light of at least one wavelength is input by the incident waveguide array, is split into multiple beams after being transmitted by the first free transmission area unit, enters the arrayed waveguide grating, is transmitted for a distance, and is output from the emergent waveguide array after being transmitted by the second free transmission area unit.
6. The integrated magneto-optical isolator on chip of claim 1, wherein the length of each waveguide in the arrayed waveguide grating satisfies a fixed length difference.
7. The integrated magneto-optical isolator on a chip of claim 1, wherein the magneto-optical film comprises, but is not limited to, rare earth doped yttrium-iron garnet.
8. An integrated magneto-optical isolator on a chip according to claim 3 or claim 4 wherein the transparent film is a material with a loss of light below a predetermined value in the magneto-optical isolator operating band, including but not limited to silicon nitride, chalcogenide glass, polymer polymers.
9. The integrated magneto-optical isolator on chip of claim 1, wherein the magnetic field applying means includes, but is not limited to, permanent magnets, charged coils.
10. The integrated magneto-optical isolator on a chip according to any one of claims 1 to 7 or 9, further comprising a light splitting means for splitting incident light into a plurality of wavelengths of light; the input end of the light splitting device is used for receiving the incident light, and the output end of the light splitting device is connected with the incident waveguide array and used for outputting the light with the multiple wavelengths to the incident waveguide array.
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0732709A1 (en) * | 1995-03-17 | 1996-09-18 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical element and optical magnetic field sensor using the same |
| KR20050035412A (en) * | 2003-10-13 | 2005-04-18 | 한국과학기술연구원 | Integrated optical isolator using multi-mode interference structure |
| CN101148753A (en) * | 2007-10-10 | 2008-03-26 | 电子科技大学 | Yttrium-iron garnet thin film material and preparation method thereof |
| CN101261372A (en) * | 2008-04-16 | 2008-09-10 | 浙江大学 | Polarization irrelevant magneto- optic waveguide light isolator |
| CN101672987A (en) * | 2008-09-12 | 2010-03-17 | 华为技术有限公司 | Optical isolator, optical add/drop multiplexer and optical combiner |
| EP2341378A1 (en) * | 2009-12-18 | 2011-07-06 | Alcatel Lucent | A photonic integrated circuit with optical isolator |
| CN202057829U (en) * | 2011-02-21 | 2011-11-30 | 中国计量学院 | Array waveguide grating insensitive to temperature and polarization |
| CN103926663A (en) * | 2014-04-25 | 2014-07-16 | 武汉光迅科技股份有限公司 | Multi-wavelength light source and low-cost manufacturing method thereof |
| CN105842883A (en) * | 2016-05-12 | 2016-08-10 | 深圳市芯思杰智慧传感技术有限公司 | Photoisolator |
| CN110596914A (en) * | 2019-08-21 | 2019-12-20 | 武汉光迅科技股份有限公司 | Array waveguide grating with adjustable wavelength and bandwidth and adjusting method thereof |
| JP2021021830A (en) * | 2019-07-26 | 2021-02-18 | 京セラ株式会社 | Isolator and optical transmitter |
| CN113937617A (en) * | 2021-10-11 | 2022-01-14 | 易锐光电科技(安徽)有限公司 | Multi-wavelength laser |
| CN114174902A (en) * | 2019-05-24 | 2022-03-11 | 洛克利光子有限公司 | Optical isolator |
| CN114384495A (en) * | 2021-12-02 | 2022-04-22 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | High-precision on-chip optical beam forming network |
-
2024
- 2024-01-09 CN CN202410031738.8A patent/CN117555168B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0732709A1 (en) * | 1995-03-17 | 1996-09-18 | Matsushita Electric Industrial Co., Ltd. | Magneto-optical element and optical magnetic field sensor using the same |
| KR20050035412A (en) * | 2003-10-13 | 2005-04-18 | 한국과학기술연구원 | Integrated optical isolator using multi-mode interference structure |
| CN101148753A (en) * | 2007-10-10 | 2008-03-26 | 电子科技大学 | Yttrium-iron garnet thin film material and preparation method thereof |
| CN101261372A (en) * | 2008-04-16 | 2008-09-10 | 浙江大学 | Polarization irrelevant magneto- optic waveguide light isolator |
| CN101672987A (en) * | 2008-09-12 | 2010-03-17 | 华为技术有限公司 | Optical isolator, optical add/drop multiplexer and optical combiner |
| EP2341378A1 (en) * | 2009-12-18 | 2011-07-06 | Alcatel Lucent | A photonic integrated circuit with optical isolator |
| CN202057829U (en) * | 2011-02-21 | 2011-11-30 | 中国计量学院 | Array waveguide grating insensitive to temperature and polarization |
| CN103926663A (en) * | 2014-04-25 | 2014-07-16 | 武汉光迅科技股份有限公司 | Multi-wavelength light source and low-cost manufacturing method thereof |
| CN105842883A (en) * | 2016-05-12 | 2016-08-10 | 深圳市芯思杰智慧传感技术有限公司 | Photoisolator |
| CN114174902A (en) * | 2019-05-24 | 2022-03-11 | 洛克利光子有限公司 | Optical isolator |
| JP2021021830A (en) * | 2019-07-26 | 2021-02-18 | 京セラ株式会社 | Isolator and optical transmitter |
| CN110596914A (en) * | 2019-08-21 | 2019-12-20 | 武汉光迅科技股份有限公司 | Array waveguide grating with adjustable wavelength and bandwidth and adjusting method thereof |
| CN113937617A (en) * | 2021-10-11 | 2022-01-14 | 易锐光电科技(安徽)有限公司 | Multi-wavelength laser |
| CN114384495A (en) * | 2021-12-02 | 2022-04-22 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | High-precision on-chip optical beam forming network |
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|---|---|
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