CN117554930B

CN117554930B - Frequency modulation continuous wave light source system and frequency modulation continuous wave laser radar

Info

Publication number: CN117554930B
Application number: CN202410046809.1A
Authority: CN
Inventors: 徐长达; 疏达
Original assignee: Benewake Beijing Co Ltd
Current assignee: Benewake Beijing Co Ltd
Priority date: 2024-01-12
Filing date: 2024-01-12
Publication date: 2024-03-12
Anticipated expiration: 2044-01-12
Also published as: CN117554930A

Abstract

The application provides a frequency modulation continuous wave light source system and a frequency modulation continuous wave laser radar, and relates to the technical field of photoelectrons. According to the frequency modulation continuous wave optical source system, the output light beam from the semiconductor single frequency laser is divided into the first light beam which needs to be transmitted to the self-injection feedback structure through the power divider and the second light beam which needs to be projected outwards as the detection light, and the light power of the first light beam is gradually increased to the actual light power which is just supported by the frequency modulation light beam fed back from the self-injection feedback structure through regulating and controlling the actual light power of the first light beam and the actual light power of the second light beam which are inherited from the output light beam, so that the semiconductor single frequency laser is placed into a self-injection locking state, the light source line width narrowing function and the high linear frequency modulation function are achieved, at the moment, the light power of the second light beam reaches the maximum output state on the basis of achieving the light source line width narrowing effect and the high linear frequency modulation effect, and the frequency modulation continuous wave optical source system is guaranteed to have the characteristics of narrow line width, large emergent laser power, high linear frequency modulation and the like.

Description

Frequency modulation continuous wave light source system and frequency modulation continuous wave laser radar

Technical Field

The application relates to the technical field of photoelectrons, in particular to a frequency modulation continuous wave light source system and a frequency modulation continuous wave laser radar.

Background

With the continuous development of scientific technology, the laser radar technology is widely applied to the fields of automatic driving of automobiles, cruising of robots, security monitoring, high-precision mapping and the like because of the advantages of high resolution, good directivity, strong anti-interference capability, high ranging precision, high response speed, no influence of ground clutter and the like, wherein the frequency modulation continuous wave (Frequency Modulated Continuous Wave, FMCW) laser radar technology is an important research direction of the current laser radar technology. In the actual use process of the frequency modulation continuous wave laser radar, a frequency modulation continuous wave optical signal corresponding to the periodic variation of the laser radar transmitting frequency along with time is generally required, an echo signal reflected by a detected object is received, and then the signal coherence condition between the transmitting wave (i.e. the frequency modulation continuous wave optical signal) and the received reflected wave (i.e. the echo signal) is analyzed to obtain the information of the distance, the moving speed and the like of the detected object relative to the corresponding laser radar.

It should be noted that the effective detection distance of the frequency-modulated continuous wave laser radar is limited by the spectral linewidth of the frequency-modulated continuous wave laser source and the optical power of the frequency-modulated continuous wave optical signal emitted by the corresponding frequency-modulated continuous wave laser source. The wider the spectral linewidth of the frequency modulation continuous wave laser source is, the lower the detection accuracy of the corresponding continuous wave laser radar is, and the shorter the corresponding effective detection distance is; the smaller the optical power of the frequency modulation continuous wave optical signal emitted by the frequency modulation continuous wave laser source is, the shorter the corresponding effective detection distance is. Therefore, how to provide a frequency modulation continuous wave laser light source with a narrow linewidth, high emergent laser power and supporting a high chirp function is an important problem to be solved in the current frequency modulation continuous wave laser radar technology.

Disclosure of Invention

In view of this, the purpose of this application is to provide a frequency modulation continuous wave light source system and frequency modulation continuous wave laser radar, can utilize the self-injection locking effect of laser instrument to realize light source linewidth narrow function and high linear frequency modulation function, and ensure through the power distribution function that the laser beam of final output possesses enough big optical power, in order to ensure that corresponding frequency modulation continuous wave light source system possesses characteristics such as narrow linewidth, emergent laser power is big, high linear frequency modulation, the frequency modulation continuous wave laser radar of being convenient for install this frequency modulation continuous wave laser has good detection accuracy and effective detection distance of sufficient, thereby make things convenient for aforesaid frequency modulation continuous wave laser radar place's vehicle, equipment such as robot realize high accurate automated function, improve equipment system's security performance.

In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

in a first aspect, the present application provides a frequency modulated continuous wave light source system comprising a first coupling waveguide, a power splitter, and a self-injection feedback structure;

the first optical transmission end of the power divider is coupled with the first coupling waveguide and receives an output light beam from the semiconductor single-frequency laser through the first coupling waveguide, wherein the power divider is used for outputting a first light beam and a second light beam based on the output light beam;

The second optical transmission end of the power divider is in optical path coupling with the self-injection feedback structure, the first light beam is injected into the self-injection feedback structure through the second optical transmission end, the power divider emits the second light beam through a third optical transmission end, the self-injection feedback structure is used for selecting a frequency modulation light beam from the first light beam, and the frequency modulation light beam is guided to the semiconductor single-frequency laser through the power divider and the first coupling wave to be sent; the power divider is further used for adjusting and controlling the optical power of the first light beam and/or the second light beam, so that the optical power of the first light beam is gradually increased until the semiconductor single-frequency laser enters a self-injection locking state under the action of the frequency-modulated light beam; the second beam is used for detection.

Therefore, the output light beam from the semiconductor single-frequency laser is divided into the first light beam which needs to be transmitted to the self-injection feedback structure and the second light beam which needs to be projected outwards through the power divider, the actual light power of the first light beam and the actual light power of the second light beam which inherit from the output light beam are regulated and controlled, the light power of the first light beam can be gradually increased to the frequency modulation light beam which just supports the feedback of the self-injection feedback structure, the semiconductor single-frequency laser is placed in a self-injection locking state (namely, the light beam frequency of the output light beam of the semiconductor single-frequency laser is locked to the light beam frequency of the frequency modulation light beam), so that the line width of the laser is narrow, the high-linearity frequency modulation function is realized through the feedback light frequency adjustable characteristic of the self-injection feedback structure, the light power of the second light beam can reach the maximum output state on the basis of realizing the line width narrowing effect and the high-linearity frequency modulation effect of a light source, the light power of the second light beam projected outwards is ensured to be large enough, the frequency of the second light beam projected outwards is also locked to the light beam frequency of the frequency modulation light beam, and the frequency of the second light beam is ensured to be locked to the light beam frequency of the frequency modulation light beam, so that the laser continuous wave continuous laser continuous wave radar has the continuous wave laser continuous wave device with high frequency modulation performance, and the continuous wave laser continuous wave device can be realized, and the continuous wave laser device can be realized, and the continuous wave device can be well, and the continuous laser device can be well, and the continuous device can be well, and the laser device can and the device.

In addition, the frequency modulation continuous wave light source system provided by the application can ensure that the frequency modulation continuous wave light source system is in a frequency modulation continuous wave light signal with narrow linewidth and high laser power for the externally projected detection light (namely the second light beam) by adjusting the light power of the injection light (namely the first light beam) of the self-injection feedback structure in real time when the frequency modulation continuous wave light source system is oriented to semiconductor single-frequency lasers with different types and/or different working parameters (such as injection current and/or environmental temperature) by means of the adjustable characteristic of the power distributor aiming at the injection light power of the self-injection feedback structure, so that the frequency modulation continuous wave light source system is ensured to be in an optimal working state continuously, and meanwhile, the working condition applicability and the laser applicability of the frequency modulation continuous wave light source system are improved.

In an alternative embodiment, the self-injection feedback structure includes a micro-ring resonator, an optical diffuser, and an optical transmission waveguide structure;

the light injection end of the light transmission waveguide structure is coupled with the second light transmission end light path of the power divider and is used for transmitting the first light beam injected by the power divider;

the micro-ring resonator is used for coupling the frequency-modulated light beam meeting the tunable vibration frequency of the micro-ring resonator from the first light beam transmitted by the light transmission waveguide structure, and then coupling the frequency-modulated light beam into the light transmission waveguide structure, so that the light transmission waveguide structure transmits the frequency-modulated light beam to the power distributor;

The light diverger is coupled with the light emergent end light path of the light transmission waveguide structure and is used for diverging the laser beam which is transmitted by the light transmission waveguide structure and does not meet the tunable vibration frequency.

Therefore, the self-injection feedback structure corresponding to the embodiment can feed back the frequency-modulated light beam with the adjustable vibration frequency to the semiconductor single-frequency laser, so that the self-injection locking effect of the laser is utilized to narrow the line width of the semiconductor single-frequency laser, and the characteristic of strong linear regulation performance of the resonance frequency of the micro-ring resonator included in the self-injection feedback structure is utilized, so that the corresponding frequency-modulated continuous wave light source system is ensured to have a high linear frequency modulation function.

In an alternative embodiment, the microring resonator includes a first optical coupling site and a second optical coupling site;

the first optical coupling part is used for coupling out the frequency-modulated light beam from the first light beam transmitted by the optical transmission waveguide structure;

the second optical coupling location is for coupling the frequency modulated light beam into the light transmission waveguide structure.

Therefore, the micro-ring resonator can ensure that the micro-ring resonator has the beam selection capability through the composition content of the micro-ring resonator corresponding to the embodiment, and can feed back the selected laser beam to the laser.

In an alternative embodiment, a first mode spot converter is formed at an end of the first coupling waveguide away from the power divider, wherein the first mode spot converter is used for matching the spot size of the semiconductor single-frequency laser with the spot size of the first coupling waveguide.

Therefore, the optical coupling efficiency between the semiconductor single-frequency laser and the power divider can be improved through the embodiment.

In an alternative embodiment, the light source system further comprises a single channel amplifying device;

the single-channel amplifying device is coupled with the third optical transmission end of the power distributor through a laser transmission waveguide, and is used for carrying out optical power amplification processing on the second light beam and outputting a laser light beam obtained through the optical power amplification processing.

Therefore, the frequency modulation continuous wave laser radar device can ensure that the frequency modulation continuous wave laser beam projected outwards through the power distributor can be amplified to the expected optical power and then output, so that the effective detection distance of the frequency modulation continuous wave laser radar corresponding to the frequency modulation continuous wave light source system can reach the state of the expected detection distance.

In an alternative embodiment, the light source system further comprises a light splitting unit and a plurality of second coupling waveguides;

the optical input end of the light splitting unit is coupled with the third optical transmission end of the power distributor through a laser transmission waveguide and is used for carrying out light splitting treatment on the second light beam to obtain a plurality of light splitting beams, wherein each light splitting beam corresponds to one optical output end of the light splitting unit;

each light output end of the light splitting unit is coupled with a second coupling waveguide light path, and the light splitting beam corresponding to the light output end is projected through the corresponding second coupling waveguide.

Therefore, through the implementation mode, the corresponding frequency modulation continuous wave light source system can be expanded from a single-channel output mode to a multi-channel output mode, and the radar point frequency of the laser radar where the frequency modulation continuous wave light source system is located is improved.

In an alternative embodiment, the light source system further comprises a multi-channel amplifying device, wherein the total number of channels of the multi-channel amplifying device is consistent with the total number of light output ends of the light splitting unit;

each second coupling waveguide is coupled with a waveguide channel light path of the multichannel amplifying device so as to carry out optical power amplification processing on the laser beam projected by the second coupling waveguide through the corresponding waveguide channel and output the laser beam obtained by the optical power amplification processing.

Therefore, according to the embodiment, the plurality of laser beams projected to the outside by the frequency modulation continuous wave light source system with the multi-channel output mode can be amplified to the expected light power, so that the effective detection distance of the frequency modulation continuous wave laser radar corresponding to the frequency modulation continuous wave light source system can reach the state of the expected detection distance.

In an alternative embodiment, a second mode spot converter is formed at one end of each second coupling waveguide near the multi-channel amplifying device, wherein each second mode spot converter is used for matching respective spot sizes of the second coupling waveguide and the waveguide channel which are connected correspondingly.

Therefore, the optical coupling efficiency between the light splitting unit and the multichannel amplifying device related to the multichannel output mode frequency modulation continuous wave light source system can be improved through the embodiment.

In an optional embodiment, the light source system further includes the semiconductor single-frequency laser, where the semiconductor single-frequency laser includes a laser light-emitting end and a non-light-emitting end opposite to the laser light-emitting end, a reflective film layer is formed on the non-light-emitting end, and an anti-reflection film layer is formed on the laser light-emitting end;

The laser light-emitting end of the semiconductor single-frequency laser is coupled with the first light transmission end light path of the power divider through the first coupling waveguide, wherein the semiconductor single-frequency laser is used for guiding the first light transmission end of the power divider through the first coupling waveguide to inject the output light beam.

In this way, according to the above embodiment, the use efficiency of the optical power of the semiconductor single-frequency laser can be improved, and the laser power of the output beam of the semiconductor single-frequency laser to be input to the first coupling waveguide can be increased.

In an alternative embodiment, the inclination angle range of the waveguide extending direction of the optical waveguide structure of the semiconductor single-frequency laser at the antireflection film layer relative to the surface normal direction of the light emitting end of the laser is 5-8 degrees.

Therefore, the anti-reflection capability of the corresponding semiconductor single-frequency laser at the light emitting end of the laser can be improved through the embodiment, and the optical coupling efficiency between the corresponding semiconductor single-frequency laser and the first coupling waveguide can be improved.

In alternative embodiments, the semiconductor single frequency laser is a distributed feedback DFB laser or a distributed bragg reflector DBR laser.

Therefore, the implementation mode of the laser corresponding to the frequency modulation continuous wave light source system can be expanded through the implementation mode.

In a second aspect, the present application provides a frequency modulated continuous wave laser radar, the laser radar including a frequency modulated continuous wave light source system according to any one of the preceding embodiments, wherein a beam frequency of a laser beam output by the frequency modulated continuous wave light source system varies according to a desired frequency modulated continuous wave signal.

Therefore, the implementation mode can ensure that the corresponding frequency modulation continuous wave laser radar has good detection accuracy and a long effective detection distance, ensure that equipment such as vehicles and robots where the frequency modulation continuous wave laser radar is located realize high-accuracy automatic functions, and improve the safety performance of equipment systems.

In a third aspect, the present application provides a terminal device, where the terminal device includes a lidar light source system according to any one of the possible implementation manners corresponding to the first aspect.

In a fourth aspect, the present application provides a terminal device, where the terminal device includes a frequency continuous wave lidar in any possible implementation manner corresponding to the second aspect.

The terminal equipment can be equipment such as vehicles, unmanned aerial vehicles, roadside traffic equipment, smart phones, smart home equipment, intelligent manufacturing equipment or robots; the technical effects that can be achieved by the above three aspects and the above fourth aspect may be described with reference to the beneficial effects of the first aspect, and the detailed description is not repeated here.

In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of a frequency modulated continuous wave light source system according to an embodiment of the present disclosure;

FIG. 2 is a second schematic diagram of a frequency modulated continuous wave light source system according to an embodiment of the present disclosure;

Fig. 3 is a schematic top view of a semiconductor single frequency laser according to an embodiment of the present disclosure;

fig. 4 is a schematic diagram of a power divider according to an embodiment of the present disclosure;

FIG. 5 is a schematic diagram of the self-injection feedback structure according to an embodiment of the present disclosure;

FIG. 6 is a second schematic diagram of the self-injection feedback structure according to the embodiment of the present application;

FIG. 7 is a third schematic diagram of the frequency modulated continuous wave light source system according to the embodiment of the present application;

FIG. 8 is a schematic diagram of a frequency modulated continuous wave light source system according to an embodiment of the present disclosure;

fig. 9 is a fifth schematic diagram of the composition of the fm continuous wave light source system according to the embodiment of the present application.

Icon: 10-a frequency modulation continuous wave light source system; 11-semiconductor single frequency lasers; 12-a first coupling waveguide; 13-a power divider; 14-self-injection feedback structure; 15-a laser transmission waveguide; 16-single channel amplifying device; 17-a spectroscopic unit; 18-a second coupling waveguide; 19-a multi-channel amplifying device; 141-an optical transmission waveguide structure; 142-a microring resonator; 143-light divergers.

Detailed Description

For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.

In the description of the present application, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on those shown in the drawings, or those conventionally put in place when the product of the application is used, or those conventionally understood by those skilled in the art, merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the application.

In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

Furthermore, in the description of the present application, it is to be understood that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

The narrow linewidth and high linearity frequency modulation optical frequency modulation continuous wave laser source provided by the frequency modulation continuous wave laser radar can be realized in the following modes:

(1) Independent light source and external independent modulator: according to the scheme, the light-emitting process of the independent light source and the modulation process of the independent modulator are mutually separated, so that the light-emitting process and the modulation process are not interfered with each other, the narrow linewidth characteristic is ensured by adopting the narrow linewidth laser as the independent light source, and the high linearity frequency modulation is ensured by the independent modulator. It is worth noting that this solution requires an additional independent modulator, and has the drawbacks of high price and low frequency modulation efficiency, which easily results in a significant attenuation of the optical power of the laser beam finally output.

(2) Direct modulation monolithically integrated laser chip: the main problem that this scheme exists is that the corresponding laser chip linewidth hardly narrows to below 300KHz, and the use demand of frequency modulation continuous wave laser radar can not be satisfied fine substantially, and this laser chip still can appear the linewidth problem of widening in direct modulation process simultaneously, leads to this laser chip's suitability greatly reduced.

(3) Direct modulation external cavity laser: although the output light of the external cavity laser passing through the scheme can meet the requirement of narrow linewidth, the scheme ensures the characteristic of narrow linewidth by arranging a resonant cavity with enough length, but the output light frequency change speed of the corresponding external cavity laser is slower just because of the limitation of the overlong resonant cavity length, so that the quick linear tuning effect is very difficult to realize, and meanwhile, the corresponding external cavity laser needs to control a plurality of independent electrodes in the tuning process to ensure that the corresponding output light frequency reaches the expected continuous wave (such as triangular wave, sine wave, square wave and other waveforms) effect.

Under the circumstances, in order to solve the above-mentioned problem, in this embodiment of the present application, by providing a fm continuous wave light source system and fm continuous wave laser radar, when implementing the light source linewidth narrowing function and the high-linearity frequency modulation function by using the self-injection locking effect of the laser, the power distribution function ensures that the finally output laser beam has enough optical power, so as to ensure that the corresponding fm continuous wave light source system has the characteristics of narrow linewidth, high emergent laser power, high-linearity frequency modulation, and the like, so that the fm continuous wave laser radar equipped with the fm continuous wave light source system has good detection accuracy and a sufficiently long effective detection distance, and is convenient for the vehicle, robot, and other equipment where the aforementioned fm continuous wave laser radar is located to implement the automation function with high accuracy, and improve the safety performance of the equipment system.

Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The embodiments described below and features of the embodiments may be combined with each other without conflict.

Referring to fig. 1, fig. 1 is a schematic diagram of a fm continuous wave light source system 10 according to an embodiment of the disclosure. In this embodiment of the present application, the fm continuous wave light source system 10 may be adapted to serve as a radar light source of the fm continuous wave laser radar, so that the fm continuous wave laser radar projects an fm continuous wave laser beam with high optical power and meeting the narrow linewidth requirement and the high chirp requirement from outside to outside through the fm continuous wave light source system 10, thereby effectively improving the detection accuracy and the effective detection distance of the corresponding fm continuous wave laser radar. The fm continuous wave light source system 10 can realize a light source linewidth narrowing function and a high-linearity frequency modulation function by using a self-injection locking effect of the laser, and ensure that the finally output laser beam has enough optical power by a power distribution function independently operated relative to the light source linewidth narrowing function and the high-linearity frequency modulation function, so as to ensure that the fm continuous wave light source system 10 has the characteristics of narrow linewidth, high emergent laser power, high-linearity frequency modulation and the like.

In addition, the fm continuous wave lidar equipped with the fm continuous wave light source system 10 described above may be mounted on a vehicle, an unmanned plane, a roadside traffic device, a smart phone, a smart home device, a smart manufacturing device, a robot, or the like. For example, the frequency modulated continuous wave lidar may be mounted on a vehicle for radar detection during driving/stopping of the vehicle to assist the vehicle in achieving unmanned, autopilot, assisted driving, intelligent stopping, etc. It can be understood that the above application scenario is only illustrative, and the fm continuous wave laser radar provided in the present application may also be applied in various other application scenarios, and is not limited to the above application scenario.

In the embodiment of the present application, the fm continuous wave light source system 10 may include a first coupling waveguide 12, a power splitter 13, and a self-injection feedback structure 14.

In the present embodiment, the first coupling waveguide 12 is disposed between the semiconductor single-frequency laser and the first optical transmission end (i.e., the T1 end in fig. 1) of the power divider 13, and is simultaneously optically coupled with the semiconductor single-frequency laser and the first optical transmission end of the power divider 13, so that the semiconductor single-frequency laser injects an output beam of the semiconductor single-frequency laser 11 (as indicated by a thick solid line with an arrow in fig. 1) into the first optical transmission end of the power divider 13 via the first coupling waveguide 12. The semiconductor single-frequency laser is used for generating a single-frequency laser beam, and the original line width range of the semiconductor single-frequency laser can be 500 KHz-5 MHz; the aforementioned first coupling waveguide 12 is for coupling the output beam of the semiconductor single-frequency laser to the first optical transmission end of the power divider 13 as much as possible; the aforementioned power splitter 13 is configured to split an output beam from the semiconductor single-frequency laser into a first beam and a second beam, so as to transmit the first beam to the outside through a second optical transmission end (i.e., a T2 end in fig. 1) of the power splitter 13 (as shown by a thin solid line with an upward diagonal in fig. 1), and transmit the second beam to the outside through a third optical transmission end (i.e., a T3 end in fig. 1) of the power splitter 13 (as shown by a thin solid line with a downward diagonal in fig. 1), and simultaneously, after splitting the first beam and the second beam, the aforementioned power splitter 13 can adjust the actual optical power level of each of the two laser beams inherited from the output beam of the aforementioned semiconductor single-frequency laser through the optical power of the first beam and/or the second beam, so as to ensure that the laser beams respectively transmitted from the second optical transmission end and the third optical transmission end to the outside each obtain an appropriate optical power level.

In this embodiment, the second optical transmission end of the power divider 13 is optically coupled to the self-injection feedback structure 14, and injects the first light beam into the self-injection feedback structure 14 through the second optical transmission end, so that the self-injection feedback structure 14 selects a frequency-modulated light beam with a frequency matching with the tunable vibration frequency of the self-injection feedback structure 14 from the first light beam under the action of the received actual optical power of the first light beam, and feeds the coupled frequency-modulated light beam (as shown by a dashed line with a downward diagonal arrow in fig. 1) back to the power divider 13, and the power divider 13 transmits the frequency-modulated light beam (as shown by a dashed line with a horizontal arrow in fig. 1) to the semiconductor single-frequency laser through the first coupling waveguide 12. When the semiconductor single-frequency laser receives the frequency-modulated light beam, stimulated radiation amplification is generated for the received feedback light (i.e. the frequency-modulated light beam), carriers generated by the semiconductor single-frequency laser due to current injection operation are consumed, the energy of the original output light of the semiconductor single-frequency laser is weakened, the output light beam frequency of the semiconductor single-frequency laser is continuously shifted towards the actual light beam frequency of the feedback light, when the actual light power of the feedback light reaches a certain level, the carriers in the semiconductor single-frequency laser are almost consumed by the feedback light, and at the moment, the light beam frequency of the output light beam of the semiconductor single-frequency laser is dependent on the light beam frequency of the feedback light, the self-injection locking state (i.e., the state that the beam frequency of the output beam of the semiconductor single-frequency laser is locked to the beam frequency of the frequency-modulated beam) is achieved, so that the self-injection locking effect of the laser is utilized to lock the output beam frequency of the semiconductor single-frequency laser to the actual beam frequency of the feedback light (i.e., the frequency-modulated beam), the laser output linewidth of the semiconductor single-frequency laser is narrowed to below 300KHz, and the characteristic of strong linear regulation performance of the resonance frequency of the self-injection feedback structure 14 is utilized to realize the high-linearity frequency modulation function in cooperation with the semiconductor single-frequency laser.

When the power divider 13 divides the received output beam into the first beam and the second beam, an initial optical power with a lower value is allocated to the first beam corresponding to the second optical transmission end, and then the optical power of the second beam corresponding to the second optical transmission end is gradually increased until the optical power of the first beam corresponding to the second optical transmission end just can support the frequency modulation beam fed back by the self-injection feedback structure 14 to place the semiconductor single frequency laser in a self-injection locking state, and at this time, the optical frequency of the second beam corresponding to the third optical transmission end correspondingly inherits the actual optical frequency of the output beam (i.e., the optical frequency of the second beam corresponding to the third optical transmission end keeps consistent with the optical frequency of the frequency modulation beam), and the actual optical power of the second beam can reach a maximum output state on the basis of realizing the line width narrowing effect and the high linearity effect of the light source, so as to ensure that the second beam has a sufficient optical power.

It will be appreciated that the actual optical power of the first beam when the semiconductor single frequency laser is in the self-injection locked state may be slightly greater than the actual optical power of the fm beam received by the semiconductor single frequency laser in the self-injection locked state, and that the optical power of the first beam that is greater than the fm beam may be used to characterize the total amount of optical transmission loss between the semiconductor single frequency laser and the self-injection feedback structure 14.

In this embodiment, the second beam may be used for detection; the third optical transmission end of the power divider 13 may be optically coupled to the laser transmission waveguide 15, and projects, through the laser transmission waveguide 15, a second light beam corresponding to the third optical transmission end, so that the second light beam output from the laser transmission waveguide 15 is used as the detection laser actually output by the fm continuous wave light source system 10, thereby ensuring that the detection laser finally output by the fm continuous wave light source system 10 has a sufficiently large optical power under the action of the power dividing function, and has a narrow linewidth characteristic and a high chirp characteristic under the action of the linewidth narrowing function and the high chirp function of the light source independently operated with respect to the power dividing function, so as to ensure that the fm continuous wave light source system 10 has the characteristics of narrow linewidth, large outgoing laser power, high chirp, and the like.

Therefore, the frequency modulation continuous wave light source system 10 provided by the application can be ensured to have the characteristics of narrow linewidth, high emergent laser power, high linear frequency modulation and the like by the light source system shown in the figure 1, so that the frequency modulation continuous wave laser radar provided with the frequency modulation continuous wave light source system 10 is convenient to have good detection accuracy and long enough effective detection distance, the automatic function of high accuracy of equipment such as vehicles, robots and the like where the frequency modulation continuous wave laser radar is located is ensured, and the safety performance of the equipment system is improved.

In addition, the tunable continuous wave light source system 10 provided in the present application can ensure that the continuous wave light source system 10 is continuously in an optimal working state by adjusting the light power of the injected light (i.e. the first light beam) from the injection feedback structure 14 in real time when the continuous wave light source system 10 is oriented to semiconductor single frequency lasers with different types and/or different working parameters (e.g. injection current and/or ambient temperature) by means of the tunable characteristic of the power divider for the injected light power of the self-injection feedback structure 14, so as to ensure that the continuous wave light source system 10 is continuously in an optimal working state, and improve the working condition applicability and the laser applicability of the continuous wave light source system 10.

Illustratively, the first coupling waveguide 12, the power splitter 13, the self-injection feedback structure 14 and the laser transmission waveguide 15 shown in fig. 1 may be disposed on the same silicon optical chip, and the tunable oscillation frequency of the self-injection feedback structure 14 is adjusted by electric tuning, thermal tuning or other adjustment methods, so that the laser frequency of the detection laser finally output by the fm continuous wave light source system 10 shown in fig. 1 can be changed according to the desired fm continuous wave signal, and the power ratio between the actual optical power levels respectively allocated by the power splitter 13 to the first light beam and the second light beam may also be adjusted by electric tuning, thermal tuning or other adjustment methods, so that the light intensity of the first light beam entering the aforementioned self-injection feedback structure 14 can be gradually increased from low to high until the actual light source linewidth of the fm continuous wave light source system 10 is narrowed to a desired state and the actual laser frequency reaches the desired frequency state, so as to ensure that more optical power can be allocated to the second light beam serving as radar detection laser.

Alternatively, please refer to fig. 2 and fig. 3 in combination, wherein fig. 2 is a second schematic diagram of the fm continuous wave light source system 10 according to the embodiment of the present application, and fig. 3 is a schematic diagram of the semiconductor single frequency laser 11 according to the embodiment of the present application in top view. In this embodiment, compared to the fm continuous wave light source system 10 shown in fig. 1, the fm continuous wave light source system 10 shown in fig. 2 may further include a semiconductor single frequency laser 11, where the semiconductor single frequency laser 11 may include a laser light emitting end and a non-light emitting end opposite to the laser light emitting end, and the semiconductor single frequency laser 11 emits a single frequency laser beam to the outside through the laser light emitting end and is optically coupled to the first coupling waveguide 12 through the laser light emitting end, so that the laser light emitting end of the semiconductor single frequency laser 11 is optically coupled to the first light transmitting end of the power splitter 13 through the first coupling waveguide 12, and at this time, the semiconductor single frequency laser 11 is used to inject an output beam into the first light transmitting end of the power splitter 13 through the first coupling waveguide 12.

The semiconductor single-frequency laser 11 is formed with a reflective film layer by vapor deposition on the non-light-emitting end, so that the output of the laser beam in the semiconductor single-frequency laser 11 at the non-light-emitting end is reduced through the reflective film layer, the laser beam in the semiconductor single-frequency laser 11 is prevented from emitting from the non-light-emitting end, and the light power utilization rate of the semiconductor single-frequency laser 11 to the internal laser beam is improved. Wherein, the internal laser beam of the semiconductor single-frequency laser 11 includes the laser beam originally generated by the semiconductor single-frequency laser 11 and the feedback light (i.e. the frequency modulation light beam) transmitted into the semiconductor single-frequency laser 11 through the power divider 13 and the first coupling waveguide; the light reflectivity value of the reflecting film layer is more than 90%, so that the reflecting film layer has enough strong light reflecting capability.

The semiconductor single-frequency laser 11 is formed with an antireflection film layer by vapor deposition on the laser light-emitting end, so that the output of the laser beam in the semiconductor single-frequency laser 11 at the laser light-emitting end is increased through the antireflection film layer, the laser beam in the semiconductor single-frequency laser 11 is restrained from emitting from the laser light-emitting end, and the light power utilization rate of the semiconductor single-frequency laser 11 to the internal laser beam is improved. The light reflectivity value of the anti-reflection film layer is below 0.5%, so that the anti-reflection film layer has strong enough anti-reflection capability.

Therefore, the utilization efficiency of the corresponding semiconductor single-frequency laser 11 on the optical power is improved through the cooperation between the reflection film layer and the antireflection film layer, the laser power of the output light beam input into the first coupling waveguide 12 by the semiconductor single-frequency laser 11 is increased, and the maximum utilization effect of the optical power of the semiconductor single-frequency laser 11 is realized.

Alternatively, in the present embodiment, the semiconductor single frequency laser 11 includes an angle of inclination (i.e., the angle in fig. 3) of the waveguide extension direction of the optical waveguide structure at the antireflection film layer with respect to the surface normal direction of the light emitting end of the laserθ) The range is 5-8 degrees, so that the anti-reflection capability of the semiconductor single-frequency laser 11 at the light emitting end of the laser is improved through a waveguide tilting means, and the optical coupling efficiency between the semiconductor single-frequency laser 11 and the first coupling waveguide 12 is synchronously improved.

Illustratively, the semiconductor single frequency laser 11 provided herein may be, but is not limited to, a distributed feedback (Distributed Feedback, DFB) laser, a distributed bragg reflection (Distributed Bragg Reflector, DBR) laser, or other single frequency laser output laser; the laser output wavelength range of the semiconductor single-frequency laser 11 is 1490 nm-1620 nm. In one implementation of this embodiment, the semiconductor single frequency laser 11 may be implemented by a DFB laser with an output wavelength between 1490nm and 1620nm.

Illustratively, the semiconductor single frequency laser 11 may be disposed on the same silicon optical chip as the first coupling waveguide 12, the power divider 13, the self-injection feedback structure 14, and the laser transmission waveguide 15; alternatively, the semiconductor single-frequency laser 11 may be disposed on a single chip.

Optionally, in the embodiment of the present application, a first mode spot converter is formed at an end of the first coupling waveguide 12 near the semiconductor single frequency laser 11 shown in fig. 1 or fig. 2, so that the spot size of the semiconductor single frequency laser and the spot size of the first coupling waveguide 12 are matched by the first mode spot converter, so as to improve the optical coupling efficiency between the semiconductor single frequency laser and the power divider 13, thereby ensuring that the first coupling waveguide 12 can couple the output beam of the semiconductor single frequency laser to the first optical transmission end of the power divider 13 as much as possible.

In one implementation of the present embodiment, the first mode spot-size converter formed on the first coupling waveguide 12 may be implemented in an inverted cone structure, where the mode spot-size of the first mode spot-size converter near the semiconductor single-frequency laser is smaller than the mode spot-size of the first mode spot-size converter near the power divider 13. The first mode spot converter and the first coupling waveguide 12 can be integrally formed, the width of the first mode spot converter on the surface of the waveguide close to the semiconductor single-frequency laser is within 60-150 nm, and the width of the first mode spot converter on the surface of the waveguide close to the power divider 13 is consistent with the width of the waveguide of the first coupling waveguide 12.

Optionally, referring to fig. 4, fig. 4 is a schematic diagram illustrating a composition of the power divider 13 according to an embodiment of the present application. In this embodiment, the power splitter 13 may be formed by using a MZI (Mach-Zender interferometer, mach-zehnder interferometer) component and at least one coupling device, where the at least one coupling device may be an MMI (Multimode Interference ) coupler shown in fig. 4 (a), a Y-waveguide shown in fig. 4 (b), or a directional coupler shown in fig. 4 (c) or fig. 4 (d); the MZI component can be used for regulating and controlling the optical power proportion relation between the two independent light beams. In one implementation of this embodiment, the power splitter 13 is implemented using a power splitter as shown in fig. 4 (c).

Optionally, please refer to fig. 5 and fig. 6 in combination, wherein fig. 5 is one of the schematic diagrams of the self-injection feedback structure 14 provided in the embodiment of the present application, and fig. 6 is the second schematic diagram of the self-injection feedback structure 14 provided in the embodiment of the present application. In this embodiment, the self-injection feedback structure 14 may include an optical transmission waveguide structure 141, an optical diffuser 143, and a micro-ring resonator 142, where the micro-ring resonator 142 includes two optical coupling sites (i.e., the optical coupling site 1 and the optical coupling site 2 shown in fig. 5 and 6) near the optical transmission waveguide structure 141.

The light injection end of the light transmission waveguide structure 141 is coupled with the second light transmission end of the power divider 13, and is used for transmitting the first light beam injected by the power divider 13 through the second light transmission end; the micro-ring resonator 142 couples out the frequency-modulated light beam satisfying the tunable vibration frequency of the micro-ring resonator 142 from the independent light beam transmitted by the light transmission waveguide structure 141 through a first light coupling part (for example, the light coupling part 1 in fig. 5), and couples the frequency-modulated light beam into the light transmission waveguide structure 141 through a second light coupling part (for example, the light coupling part 2 in fig. 5), so that the light transmission waveguide structure 141 can transmit the frequency-modulated light beam to the power divider 13, and the power divider 13 feeds back the received frequency-modulated light beam satisfying the tunable vibration frequency to the semiconductor single-frequency laser; the light diverger 143 is coupled to the light emitting end of the light transmission waveguide structure 141, and is configured to diverge the laser beam transmitted by the light transmission waveguide structure 141, which does not satisfy the tunable oscillation frequency.

In this process, the optical transmission waveguide structure 141 may include only one light emitting end, for example, the optical transmission waveguide structure 141 may include only a single light emitting end when implemented in the e-like structure shown in fig. 5, and the micro-ring resonator 142 may fixedly use a certain optical coupling portion as a first optical coupling portion to couple the frequency-modulated light beam satisfying the tunable vibration frequency through the first optical coupling portion for storage, and use the remaining other optical coupling portion as a second optical coupling portion to couple the stored frequency-modulated light beam to the optical transmission waveguide structure 141 through the second optical coupling portion for laser feedback processing.

Taking the self-injection feedback structure 14 shown in fig. 5 as an example, the micro-ring resonator 142 in fig. 5 may couple out the frequency-modulated light beam (as shown by the solid line with arrow in fig. 4) satisfying the tunable vibration frequency from the first light beam (as shown by the solid line with arrow in fig. 4) transmitted from the light transmission waveguide structure 141 only through the light coupling portion 1 (i.e., the first light coupling portion of the micro-ring resonator 142 shown in fig. 5), then the micro-ring resonator 142 in fig. 4 may couple the stored frequency-modulated light beam to the light transmission waveguide structure 141 through the light coupling portion 2 (i.e., the second light coupling portion of the micro-ring resonator 142 shown in fig. 5), and at this time, the frequency-modulated light beam (as shown by the four solid line with arrow in fig. 4) on the light transmission waveguide structure 141 may be transmitted from the light emitting end to the light injection end by the light transmission waveguide structure 141 and fed back to the semiconductor single frequency-modulated laser through the power splitter 13.

Meanwhile, the optical transmission waveguide structure 141 may also include two light emitting ends, for example, when the optical transmission waveguide structure 141 is implemented in a { shape-like structure as shown in fig. 6, the micro-ring resonator 142 may use any one of the optical coupling parts as a first optical coupling part to couple and store the frequency-modulated light beam satisfying the tunable vibration frequency, and use the remaining other optical coupling part as a second optical coupling part to couple the stored frequency-modulated light beam to the optical transmission waveguide structure 141 for performing the laser feedback processing.

Taking the self-injection feedback structure 14 shown in fig. 6 as an example, when the micro-ring resonator 142 in fig. 6 couples the optical coupling part 1 as the first optical coupling part from the lower waveguide branch of the optical transmission waveguide structure 141 (i.e. the waveguide branch connected to the optical diffuser 143 below in fig. 6), the frequency-modulated light beam satisfying the tunable vibration frequency (as shown by the solid line with arrow in fig. 6) is coupled out for storage, and then the micro-ring resonator 142 in fig. 6 couples the stored frequency-modulated light beam onto the upper waveguide branch of the optical transmission waveguide structure 141 (i.e. the waveguide branch connected to the optical diffuser 143 above in fig. 6) as the second optical coupling part, and the frequency-modulated light beam on the upper waveguide branch of the optical transmission waveguide structure 141 (as shown by the dashed line with arrow above in fig. 6) is transferred by the optical transmission waveguide structure 141 to the optical injection end, and is fed back to the semiconductor single-frequency laser via the power splitter 13; meanwhile, when the micro-ring resonator 142 in fig. 5 stores the frequency-modulated light beam satisfying the tunable oscillation frequency by coupling the optical coupling portion 2 as the first optical coupling portion from the first light beam transmitted from the upper waveguide branch of the optical transmission waveguide structure 141 (as indicated by the dashed arrow line inside the micro-ring resonator in fig. 6), and then the micro-ring resonator 142 in fig. 6 couples the stored frequency-modulated light beam to the lower waveguide branch of the optical transmission waveguide structure 141 by coupling the optical coupling portion 1 as the second optical coupling portion, the frequency-modulated light beam on the lower waveguide branch of the optical transmission waveguide structure 141 (as indicated by the dashed arrow line on the lower waveguide branch in fig. 6) is transmitted to the light injection end by the optical transmission waveguide structure 141, and the frequency-modulated light beam is fed back to the semiconductor single-frequency laser via the power divider 13.

In addition, for the above-mentioned micro-ring resonator 142, the resonance condition of the micro-ring resonator 142 for coupling the FM beam from the independent beam transmitted from the optical transmission waveguide structure 141 by using the tunable resonance frequency can be as follows'm λ=2/> π/> n R,mExpressed by =1, 2,3 … ", wherein @ is"λ"used to denote the beam wavelength of the aforementioned FM beam"n"used to denote the refractive index of the aforementioned microring resonator 142"R"is used to refer to the microring radius of the microring resonator 142 previously described. The refractive index of the micro-ring resonator 142 may be adjusted by electrically, thermally, or other adjustment methods to dynamically adjust the tunable resonant frequency of the micro-ring resonator 142, and vary the tunable resonant frequency according to the desired fm continuous wave signal, so as to ensure that the fm continuous wave light source system 10 projects an fm continuous wave laser beam outward.

For the above-described light diverger 143, the light diverger 143 is used to prevent the laser beam that does not satisfy the tunable oscillation frequency from being fed back to the semiconductor single-frequency laser 11. Wherein the light divergers 143 may be implemented in the form of grating couplers or tapered waveguides. In one implementation of this embodiment, the aforementioned light diverger 143 is implemented by using a tapered waveguide, and the size of the waveguide surface of the light diverger 143 near the light emitting end of the light transmission waveguide structure 141 is larger than the size of the other waveguide surface of the light diverger 143, so that the laser beam not satisfying the tunable vibration frequency can be slowly dissipated by utilizing the characteristic that the confinement capacity of the optical field decreases as the size of the waveguide surface decreases.

Therefore, according to the actual composition of the self-injection feedback structure 14, the self-injection feedback structure 14 can feed back the frequency-modulated light beam with the adjustable frequency to the semiconductor single-frequency laser 11, so as to narrow the line width of the semiconductor single-frequency laser 11 by utilizing the self-injection locking effect of the laser, and ensure the corresponding frequency-modulated continuous wave light source system 10 to have a high frequency-modulated function by utilizing the characteristic of strong linear adjustment performance of the resonant frequency of the micro-ring resonator 142 included in the self-injection feedback structure 14.

Optionally, referring to fig. 7, fig. 7 is a third schematic diagram of the fm continuous wave light source system 10 according to the embodiment of the present application. In this embodiment, compared to the fm continuous wave light source system 10 shown in fig. 2, the fm continuous wave light source system 10 shown in fig. 7 may further include a single-channel amplifying device 16, where the single-channel amplifying device 16 is coupled to the third optical transmission end optical path of the power splitter 13 through the laser transmission waveguide 15, and is configured to perform optical power amplification processing on the second light beam projected by the power splitter 13 through the laser transmission waveguide 15, and output a laser beam obtained by the optical power amplification processing, so that the fm continuous wave laser beam directly projected by the power splitter 13 is ensured to be amplified to a desired optical power by the single-channel amplifying device 16 and then output, so that an effective detection distance of the fm continuous wave laser radar where the corresponding fm continuous wave light source system 10 is located can reach a state of a desired detection distance.

Illustratively, the single channel amplifying device 16 may be, but is not limited to, an amplifier such as a semiconductor optical amplifier, a fiber amplifier, or the like. In one implementation of the present embodiment, the single-channel amplifying device 16 is a semiconductor optical amplifier, and the single-channel output power of the single-channel amplifying device 16 may be 100 mw-300 mw.

Optionally, referring to fig. 8, fig. 8 is a schematic diagram illustrating a composition of the fm continuous wave light source system 10 according to an embodiment of the present disclosure. In the embodiment of the present application, compared to the fm continuous wave light source system 10 shown in fig. 2, the fm continuous wave light source system 10 shown in fig. 8 may further include a light splitting unit 17 and a plurality of second coupling waveguides 18.

The optical input end (i.e., IN end IN fig. 8) of the optical splitting unit 17 is optically coupled to the third optical transmission end of the power splitter 13 via the laser transmission waveguide 15, and is configured to perform optical splitting processing on the second light beam projected by the power splitter 13 via the laser transmission waveguide 15, so as to obtain a plurality of split light beams, where each split light beam individually corresponds to one optical output end of the optical splitting unit 17, and at least two optical output ends (e.g., the 1O end, the 2O end, and the 3O end IN fig. 7) of the optical splitting unit 17 are provided.

Each of the light output ends of the light splitting unit 17 is optically coupled to one of the second coupling waveguides 18, and the split light beam corresponding to the light output end is projected through the corresponding second coupling waveguide 18.

Therefore, the corresponding frequency modulation continuous wave light source system 10 can be expanded from a single-channel output mode to a multi-channel output mode through the matching between the light splitting unit 17 and the plurality of second coupling waveguides 18, and the radar point frequency of the laser radar where the frequency modulation continuous wave light source system 10 is located is improved.

Illustratively, the light splitting unit 17 and the plurality of second coupling waveguides 18 may be disposed on the same silicon optical chip as the first coupling waveguide 12, the power splitter 13, the self-injection feedback structure 14, and the laser transmission waveguide 15; the aforementioned beam splitting unit 17 may be implemented using at least one beam splitter, and the type of the beam splitter may be, but is not limited to, a Y-waveguide, an MMI coupler, or the like.

Optionally, referring to fig. 9, fig. 9 is a schematic diagram of a fm continuous wave light source system 10 according to an embodiment of the present disclosure. In the embodiment of the present application, compared to the fm continuous wave light source system 10 shown in fig. 8, the fm continuous wave light source system 10 shown in fig. 9 may further include a multi-channel amplifying device 19, where the total number of channels of the multi-channel amplifying device 19 is consistent with the total number of light output ends of the aforementioned light splitting unit 17.

Each second coupling waveguide 18 is coupled to a waveguide path of the multi-channel amplifying device 19, so as to perform optical power amplification processing on the laser beam projected by the second coupling waveguide 18 through the corresponding waveguide path, and output the laser beam obtained by the optical power amplification processing, so that the multi-channel amplifying device 19 ensures that the multiple laser beams projected from the multi-channel output mode fm continuous wave optical source system 10 to the outside can be amplified to the desired optical power, so as to ensure that the effective detection distance of the fm continuous wave laser radar where the corresponding fm continuous wave optical source system 10 is located can reach the state of the desired detection distance.

Illustratively, the multi-channel amplifying device 19 may be, but is not limited to, an amplifier such as a semiconductor optical amplifier, a fiber amplifier, or the like. In one implementation manner of this embodiment, the multi-channel amplifying device 19 is a semiconductor optical amplifier, and the single-channel output power of the multi-channel amplifying device 19 configured for each waveguide channel may be 100 mw-300 mw.

Optionally, in this embodiment of the present application, a second mode spot converter is formed at an end of each second coupling waveguide 18 near the multichannel amplifying device 19, so that respective spot sizes of the second coupling waveguide 18 and the waveguide channels which are correspondingly connected are matched by the second mode spot converter, so as to improve optical coupling efficiency between the optical splitting unit 17 and the multichannel amplifying device 19 involved in the fm continuous wave optical source system 10 with a multichannel output mode, thereby ensuring that each laser beam split by the optical splitting unit 17 can be coupled to the corresponding waveguide channel as far as possible for performing optical power amplification processing.

In one implementation of this embodiment, the second spot-size converter formed on the second coupling waveguide 18 may be implemented with an inverted cone structure, where the spot-size of the second spot-size converter near the second coupling waveguide 18 is larger than the spot-size of the second spot-size converter near the multi-channel amplifying device 19. The second mode spot converter and the second coupling waveguide 18 may be integrally formed, the width of the first mode spot converter near the waveguide surface of the multi-channel amplifying device 19 is within 60 nm-150 nm, and the width of the second mode spot converter near the waveguide surface of the second coupling waveguide 18 is consistent with the waveguide width of the second coupling waveguide 18.

In addition, the implementation materials of the various waveguide structures related to the frequency modulation continuous wave light source system 10 may be at least one material of silicon, silicon nitride and lithium niobate, wherein the thickness of the waveguide structure prepared by adopting the silicon material may be 220nm, and the width of the waveguide structure prepared by adopting the silicon material may be 400 nm-600 nm; the thickness of the waveguide structure prepared by the silicon nitride material can be 400nm, and the width of the waveguide structure prepared by the silicon nitride material can be 400 nm-1100 nm.

In this application, the embodiment of the present application further provides a frequency-modulated continuous wave laser radar, where the frequency-modulated continuous wave laser radar may include any one of the foregoing frequency-modulated continuous wave light source systems 10, by controlling the tunable vibration frequency of the frequency-modulated continuous wave light source system 10 to change according to a desired frequency-modulated continuous wave signal, and controlling the power distributor 13 of the frequency-modulated continuous wave light source system 10, the beam frequency of the laser beam finally output by the frequency-modulated continuous wave light source system 10 changes according to the desired frequency-modulated continuous wave signal and has a sufficiently large optical power, so as to ensure that the frequency-modulated continuous wave laser radar has good detection accuracy and a sufficiently long effective detection distance, so that the vehicle, the robot, and other devices where the frequency-modulated continuous wave laser radar is located implement an automation function with high accuracy, and improve the safety performance of the device system.

The embodiment of the application also provides a terminal device, which comprises the laser radar light source system in any embodiment.

The embodiment of the application also provides another terminal device, which comprises the frequency continuous wave laser radar in any embodiment.

The terminal equipment can be equipment such as vehicles, unmanned aerial vehicles, roadside traffic equipment, smart phones, smart home equipment, intelligent manufacturing equipment or robots.

The foregoing is merely various embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered in the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A frequency modulated continuous wave light source system, wherein the light source system comprises a first coupling waveguide, a power divider and a self-injection feedback structure;

2. The light source system of claim 1, wherein the self-injection feedback structure comprises a micro-ring resonator, a light diffuser, and a light-transmitting waveguide structure;

3. The light source system of claim 2, wherein the microring resonator comprises a first optical coupling location and a second optical coupling location;

4. A light source system as recited in any one of claims 1-3, wherein an end of the first coupling waveguide remote from the power splitter is formed with a first mode spot-size converter, wherein the first mode spot-size converter is configured to match a spot-size of the semiconductor single-frequency laser with a spot-size of the first coupling waveguide.

5. A light source system according to any one of claims 1-3, further comprising a single channel amplifying device;

6. A light source system according to any one of claims 1-3, further comprising a light splitting unit and a plurality of second coupling waveguides;

7. The light source system of claim 6, further comprising a multi-channel amplifying device, wherein a total number of channels of the multi-channel amplifying device is consistent with a total number of light output ends of the light splitting unit;

8. The light source system of claim 7, wherein an end of each second coupling waveguide adjacent to the multi-channel amplifying device is formed with a second spot-size converter, wherein each second spot-size converter is configured to match respective spot sizes of the correspondingly connected second coupling waveguides and waveguide channels.

9. A light source system as recited in any one of claims 1-3, wherein the light source system further comprises the semiconductor single frequency laser, the semiconductor single frequency laser comprising a laser light exit end and a non-light exit end opposite the laser light exit end, the non-light exit end having a reflective film layer formed thereon, the laser light exit end having an anti-reflection film layer formed thereon;

10. The light source system according to claim 9, wherein an inclination angle of the waveguide extending direction of the optical waveguide structure of the semiconductor single-frequency laser at the antireflection film layer with respect to the surface normal direction of the light emitting end of the laser is in a range of 5 ° to 8 °.

11. A light source system as recited in any one of claims 1-3, wherein the semiconductor single frequency laser is a distributed feedback DFB laser or a distributed bragg reflector DBR laser.

12. A frequency modulated continuous wave lidar, characterized in that the lidar comprises a frequency modulated continuous wave light source system according to any of claims 1 to 11.