CN117524996A - Molded power semiconductor module and method for manufacturing same - Google Patents

Molded power semiconductor module and method for manufacturing same Download PDF

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Publication number
CN117524996A
CN117524996A CN202310977645.XA CN202310977645A CN117524996A CN 117524996 A CN117524996 A CN 117524996A CN 202310977645 A CN202310977645 A CN 202310977645A CN 117524996 A CN117524996 A CN 117524996A
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CN
China
Prior art keywords
power
molded
power semiconductor
molded body
semiconductor module
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Pending
Application number
CN202310977645.XA
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Chinese (zh)
Inventor
M·贝斯勒
P·H·琼斯
L·布施
E·拉明格
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Infineon Technologies AG
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Infineon Technologies AG
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Publication of CN117524996A publication Critical patent/CN117524996A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A molded power semiconductor module comprising: one or more power semiconductor die; a molded body at least partially encapsulating the one or more power semiconductor die, the molded body having a first side, an opposite second side, and a lateral side connecting the first side and the second side; first and second power contacts disposed laterally adjacent to each other at a first one of the lateral sides of the molded body and electrically coupled to the one or more power semiconductor die, the first and second power contacts each including a first side and an opposite second side; wherein the first sides of the first and second power contacts each comprise an exposed portion exposed from the molded body, and the second sides of the first and second power contacts comprise portions arranged vertically below the profile of the respective exposed portions of the first sides and at least partially covered by protruding portions of the molded body, the vertical direction being perpendicular to the first and second sides of the power contacts.

Description

Molded power semiconductor module and method for manufacturing same
Technical Field
The present disclosure relates generally to a molded power semiconductor module and a method for manufacturing such a molded power semiconductor module.
Background
The power semiconductor module may include an enclosure, such as a molded body, and a power contact exposed from the enclosure and configured to electrically couple the power semiconductor module to an external appliance. Manufacturing a low inductance joint between the power contact and the external appliance may, for example, include welding the power contact to the external appliance. The power contact may be mechanically pressed onto the external appliance during the manufacture of the joint. In order to prevent damage or bending deformation of the power contact due to mechanical pressure, special care may be taken and/or dedicated support may be provided for the power contact. This may, for example, increase the cost of mounting the power semiconductor module. Furthermore, the power contacts of the power semiconductor modules have to be arranged at a minimum distance with respect to each other in order to ensure a proper electrical isolation from each other. However, the larger the distance, the worse the inductance of the power semiconductor module may become. An improved molded power semiconductor module and an improved method for manufacturing a molded power semiconductor module may help solve these and other problems.
Disclosure of Invention
Various aspects relate to a molded power semiconductor module, comprising: one or more power semiconductor die; a molded body at least partially encapsulating the one or more power semiconductor die, the molded body having a first side, an opposite second side, and a lateral side connecting the first side and the second side; first and second power contacts disposed laterally adjacent to each other at a first one of the lateral sides of the molded body and electrically coupled to the one or more power semiconductor die, the first and second power contacts each including a first side and an opposite second side; wherein the first sides of the first and second power contacts each comprise an exposed portion exposed from the molded body, and the second sides of the first and second power contacts comprise portions arranged vertically below the profile of the respective exposed portions of the first sides and at least partially covered by protruding portions of the molded body, wherein the vertical direction is perpendicular to the first and second sides of the power contacts.
Various aspects relate to a method for manufacturing a molded power semiconductor module, the method comprising: providing one or more power semiconductor dies; electrically coupling first and second power contacts to the one or more power semiconductor dies, the first and second power contacts each including a first side and an opposite second side; and at least partially encapsulating the one or more power semiconductor die with a molded body, wherein the molded body has a first side, an opposite second side, and lateral sides connecting the first side and the second side such that the first and second power contacts are disposed at a first one of the lateral sides of the molded body; wherein a first side of the first and second power contacts each comprise an exposed portion exposed from the molded body, and a second side of the first and second power contacts comprises a portion arranged vertically below a contour of the respective exposed portion of the first side and at least partially covered by a protruding portion of the molded body, wherein the vertical direction is perpendicular to the first and second sides of the power contacts.
Drawings
The drawings illustrate examples and, together with the description, serve to explain the principles of the disclosure. Other examples of the present disclosure and many of the intended advantages will be readily appreciated as they become apparent in view of the detailed description that follows. The elements of the drawings are not necessarily drawn to scale relative to each other. Like reference numerals designate corresponding similar parts.
Fig. 1A and 1B show a top view (fig. 1A) and a cross-sectional view (fig. 1B) of a molded power semiconductor module, wherein protruding portions of the molded body are arranged below the power contacts and mechanically support the power contacts.
Fig. 2 shows a cross-sectional view of the molded power semiconductor module of fig. 1 according to one specific example.
Fig. 3 shows a cross-sectional view of the molded power semiconductor module of fig. 1 according to another specific example.
Fig. 4 shows a perspective view of another molded power semiconductor module including a power contact, a protruding portion of a molded body, and a control or sensing contact.
Fig. 5 shows a top view of another molded power semiconductor module comprising the components shown in fig. 1A and 1B and additionally comprising test contacts.
Fig. 6 is a flow chart of an exemplary method for manufacturing a molded power semiconductor module.
Detailed Description
In the following detailed description, directional terms, such as "top", "bottom", "left", "right", "up", "down", and the like, are used with reference to the orientation of the drawings being described. Because components of the present disclosure can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration only. It is to be understood that other examples may be utilized and structural or logical changes may be made.
In addition, while an example specific feature or aspect may have been disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be desired and advantageous for any given or particular application, unless otherwise particularly indicated or technically limited. Furthermore, to the extent that the terms "includes," has, "" with, "or other variants thereof are used in either the detailed description or the claims, such terms are intended to be inclusive in a manner similar to the term" comprising. The terms "coupled" and "connected," along with their derivatives, may be used. It should be understood that these terms may be used to indicate that two elements co-operate or interact with each other whether they are in direct physical or electrical contact or whether they are not in direct contact with each other; intervening elements or layers may be disposed between "joined," "attached," or "connected" elements. However, elements that are "joined," "attached," or "connected" may also be in direct contact with each other. Furthermore, the term "exemplary" is meant to be exemplary only, and not optimal or optimal.
Examples of molded power semiconductor modules may use various types of semiconductor die or circuits integrated in the semiconductor die, such as AC/DC or DC/DC converter circuits, power MOS transistors, power schottky diodes, JFETs (Junction Gate Field Effect Transistor, junction gate field effect transistors), power bipolar transistors, logic integrated circuits, analog integrated circuits, mixed signal integrated circuits, sensor circuits, power integrated circuits, and the like. Examples may also use semiconductor dies that include MOSFET transistor structures or vertical transistor structures, such as IGBT (insulated gate bipolar transistor) structures, or semiconductor dies that include such general transistor structures: at least one electrical contact pad is disposed on a first major face of the semiconductor die and at least one other electrical contact pad is disposed on a second major face of the semiconductor die opposite the first major face of the semiconductor die.
Efficient molding of power semiconductor modules may, for example, reduce material consumption, ohmic losses, chemical waste, etc., and thus energy and/or resource savings may be achieved. As specified in the present description, the improved molded power semiconductor module and the improved method for manufacturing a molded power semiconductor module may thus at least indirectly contribute to a green technical solution, i.e. a climate friendly solution, thereby alleviating the use of energy and/or resources.
Fig. 1A and 1B show a molded power semiconductor module 100. Fig. 1A shows a top view, and fig. 1B shows a cross-sectional view taken along line B-B' in fig. 1A.
The molded power semiconductor module 100 includes one or more power semiconductor die 110, a molded body 120, a first power contact 130, and a second power contact 140.
One or more power semiconductor die 110 may be configured to be capable of operating at high voltages and/or high currents. One or more power semiconductor die 110 may be electrically coupled to form any suitable type of circuit, such as a converter circuit, an inverter circuit, a half-bridge circuit, and the like.
In the case where the molded power semiconductor module 100 includes more than one power semiconductor die 110, the power semiconductor die 110 may all be of the same type, or the power semiconductor die 110 may be of different types.
According to one example, the molded power semiconductor module 100 includes one or more carriers 150, wherein the one or more power semiconductor die 110 are disposed on the carriers 150. Each power semiconductor die 110 may be arranged on a separate carrier 150, or multiple ones of the power semiconductor dies 110 or all of the power semiconductor dies 110 may be arranged on the same carrier 150. The one or more carriers 150 may be, for example, power electronics substrates. The carrier 150 may comprise a layer structure comprising at least one electrically conductive layer and at least one electrically isolating layer. The carrier 150 may be, for example, of the Direct Copper Bonding (DCB), direct Aluminum Bonding (DAB) or Active Metal Brazing (AMB) type. According to another example, carrier 150 may be a leadframe member.
The power contacts 130, 140 may be electrically coupled to the carrier 150 and/or the power semiconductor die 110, for example, using electrical connectors such as connecting wires, straps, or contact clips.
The molded body 120 at least partially encapsulates the one or more power semiconductor die 110. The molded body 120 has a first side 121, an opposite second side 122, and a lateral side 123 connecting the first side 121 and the second side 122.
The molded body 120 may comprise any suitable molding material. The molded body 120 may be manufactured, for example, by injection molding, transfer molding, or compression molding. The molded body 120 may include filler particles, particularly inorganic filler particles configured to reduce the thermal resistance of the molded body 120.
As shown in fig. 1B, one or more carriers 150 may be exposed from the molded body 120 at the second side 122. However, the carrier 150 may not be exposed from the molded body 120.
The second side 122 of the molded body 120 may be configured to be disposed over a substrate and/or a heat sink. The heat sink may be configured for air cooling, or the heat sink may be configured to use a cooling fluid to directly or indirectly liquid cool the molded power semiconductor module 100.
The first power contact 130 and the second power contact 140 are arranged laterally adjacent to each other at a first one of the lateral sides 123 of the molded body 120. The molded power semiconductor module 100 may include only two power contacts 130, 140, as shown in fig. 1A. However, the molded power semiconductor module 100 may also include one or more additional power contacts. The one or more further power contacts may be arranged laterally adjacent to the first power contact 130 and the second power contact 140 at a first one of the lateral sides 123 of the molded body 120. However, it is also possible that one or more further power contacts are arranged at one or more other of the lateral sides 123.
According to one example, the molded power semiconductor module 100 further includes one or more control or sensing contacts. The control or sensing contact may be arranged, for example, at the first side 121 and/or at one of the lateral sides 123 of the molded body. The control or sensing contact may for example comprise a pin, in particular a press fit pin, or a leadframe member. The control or sensing contact may be configured to couple the molded power semiconductor module 100 to an application board.
The first and second power contacts 130, 140 are electrically coupled to the one or more power semiconductor dies 110. The power contacts 130, 140 may, for example, be configured to provide respective supply voltages to the power semiconductor die 110. The corresponding supply voltage may be, for example, a positive supply voltage or a negative supply voltage. However, the power contacts 130, 140 may also be configured as output contacts of the power semiconductor die 110.
The power contacts 130, 140 may be, for example, leadframe members. The power contacts 130, 140 may, for example, include or consist of Al, cu or Fe. The power contacts 130, 140 may include a coating, such as a Ni coating.
The first and second power contacts 130, 140 include a first side 131, 141 and an opposite second side 132, 142, respectively. The first sides 131, 141 of the first and second power contacts 130, 140, respectively, include exposed portions exposed from the molded body 120. In fig. 1B, the exposed portion of the first side 141 of the second power contact 140 is marked by a vertical dashed line.
On the other hand, the second sides 132, 142 of the first and second power contacts 130, 140 comprise portions arranged vertically below the profile of the respective exposed portions of the respective first sides 131, 132. Furthermore, the portions of the second sides 132, 142 are at least partially covered by the protruding portion 120' of the molded body 120. In fig. 1B, the protruding portion 120' is a portion of the molded body 120 disposed between the vertical dotted lines. The protruding portion 120' may continue from the rest of the molded body 120.
For example, during installation of the molded power semiconductor module 100, mechanical forces may need to be applied to the power contacts 130, 140. The power contacts 130, 140 may, for example, be configured to be coupled (e.g., welded) to an external appliance, such as a bus bar. To create a secure bond, the power contacts 130, 140 may be pressed onto the bus bar during the welding process. The protruding portion 120' of the molded body 120 may be configured to mechanically support the power contact 130, 140 during the process and prevent the power contact 130, 140 from being bent and deformed. The molded power semiconductor module 100 including the protruding portion 120' may eliminate the need to provide dedicated external support for the power contacts 130, 140 during the mounting process (which may include, for example, a soldering process as described above).
The molded power semiconductor module 100 may thus have a simplified mounting process, which may lead to a cost reduction.
The protruding portion 120' may, for example, be configured to be able to support the power contacts 130, 140 against mechanical forces of 0.5N or greater, or 1N or greater, or 1.5N or greater, or 2N or greater. The protruding portion may, for example, have a thickness of 0.5mm or more, or 1mm or more, or 1.5mm or more, or 2mm or more, or 5mm or more, measured between the second side 122 of the molded body 120 and the second sides 132, 142 of the power contacts 130, 140. The protruding portion 120' may cover more than 50% or more than 70% or more than 90% of the surface area of the second side 132, 142 of the power contact 130, 140, or it may cover 100% of the surface area of the second side 132, 142 of the power contact 130, 140.
Fig. 2 shows a cross-sectional view of a particular example of the molded power semiconductor module 100 taken along line A-A' in fig. 1A.
As shown in fig. 2, the first and second power contacts 130, 140 may also include lateral sides 133, 143 respectively connecting the first and second sides 131, 132, 141, 142, respectively. Further, the lateral side 133 of the first power contact 130 is arranged opposite the lateral side 143 of the second power contact 140.
In the example shown in fig. 2, the molded body 120 completely shields the opposing lateral sides 133, 143 from each other such that the creepage distance between the first power contact 130 and the second power contact 140 increases. In other words, the molded body 120 may include a ridge 120", the ridge 120" being disposed between opposite lateral sides 133, 143 of the power contacts 130, 140. The first sides 131, 141 of the power contacts 130, 140 are arranged in a first plane (plane a) and the ridge 120 "extends to a second plane (plane B) arranged above the first plane. The creepage distance between the power contacts 130, 140 increases by a factor of two compared to the height difference between the two planes a and B. As shown in fig. 2, the molded body 120 does not necessarily have to extend above the plane a at the outer lateral sides of the power contacts 130, 140, since there is no need to increase the creepage distance.
In order to couple the molded power semiconductor module 100 comprising the ridge 120 "to an external appliance (e.g. a bus bar), it may be required that the external appliance comprises a contact having an adapted shape that takes into account the presence of the ridge 120".
According to one example, the molded power semiconductor module 100 does not comprise a ridge 120", which means that the molded body 120 does not extend above the plane a between the power contacts 130, 140. In this case, the creepage distance between the power contact parts 130, 140 does not increase.
Fig. 3 shows a cross-sectional view of another specific example of the molded power semiconductor module 100 taken along line A-A' in fig. 1A.
As shown in the specific example of fig. 3, the molded body 120 may at least partially cover edge portions of the first sides 131, 141 of the first and second power contacts 130, 140. By covering the edge portions of the first sides 131, 141, the creepage distance between the power contacts 130, 140 may be further increased.
The edge portion of the first side 131, 141 of the power contact 130, 140 covered by the molded body 120 may, for example, have a width w of 0.1mm or more, or 0.3mm or more, or 0.6mm or more, or 0.9mm or more, or 1.5mm or more, or 2mm or more, or 5mm or more.
Edge portions along the single lateral sides 133, 143 of the power contacts 130, 140 may be covered by the molded body 120, as shown in the example of fig. 3. However, edge portions along both lateral sides 133, 143 of the power contact 130, 140 may also be covered by the molded body 120.
Further, note that in fig. 1A, distal ends of the power contact portions 130, 140 (i.e., lateral sides 133, 143 disposed at the bottom of the drawing in fig. 1A) are exposed from the molded body 120. However, the molded body 120 may also cover the lateral sides 133, 143.
Fig. 4 shows a perspective view of another molded power semiconductor module 400, which molded power semiconductor module 400 may be similar or identical to molded power semiconductor module 100, except for the differences described below.
The molded power semiconductor module 400 includes the first and second power contacts 130, 140 and it also includes the third power contact 160. The third power contact 160 may be disposed laterally adjacent to the second power contact 140 at the same lateral side 123 of the molded body 120. The power contacts 130, 140, and 160 may be, for example, coplanar with one another. As further explained above, the protruding portion 120' may be configured to support all three power contacts 130, 140, and 160.
According to one example, the first and third power contacts 130, 160 are configured to carry a positive supply voltage and the second power contact 140 is configured to carry a negative supply voltage. According to another example, the situation is the opposite.
The molded power semiconductor module 400 may further include a fourth power contact 170. The fourth power contact 170 may be disposed at a lateral side 123 of the molded body 120 opposite to the lateral side 123 including the first, second, and third power contacts 130, 140, and 160. The fourth power contact 170 may be configured, for example, as a contact of the molded power semiconductor module 400.
According to one example, the fourth power contact 170 is not supported by the protruding portion 120' of the molded body 120. In other words, both the first and second sides of the fourth power contact 170 are exposed from the molded body 120. However, the fourth power contact 170 may also be supported by the protruding portion 120' similarly to the first, second and third power contacts 130, 140 and 160.
The molded power semiconductor module 400 may also include one or more control or sensing contacts 180. The control or sensing contact 180 may be arranged, for example, at the first side 121 of the molded body 120. The control or sense contacts 180 may be arranged in a substantially vertical direction relative to the orientation of the power contacts 130-170. The control or sensing contact 180 may be configured to provide a control signal for controlling the power semiconductor die 110 of the molded power semiconductor module 400 and/or to output a sensing signal, e.g., for temperature sensing. According to one example, the control or sense contact 180 includes a pin, such as a press fit pin.
Fig. 5 shows a top view of another molded power semiconductor module 500, which molded power semiconductor module 500 may be similar or identical to molded power semiconductor module 100 or 400, except for the differences described below.
In particular, the molded power semiconductor module 500 further includes one or more test contacts 190 exposed from the molded body 120. The one or more test contacts 190 are configured to provide electrical connection to the topside electrode of the one or more power semiconductor dies 110 for electrical testing.
The top-side electrodes are those electrodes of the power semiconductor die 110 that face the first side 121 of the molded body 120. After the molded body 120 has been formed, the topside electrode may be inaccessible from the outside. By providing test contacts 190 coupled to the top side electrode, electrical functional testing of the top side electrode may be performed.
According to one example, one or more of the test contacts 190 are arranged coplanar with the power contacts 130, 140, and 160. As shown in fig. 5, the test contact 190 may be disposed in a cutout region of the power contact (the second power contact 140 in fig. 5). The power contacts 130-170 and the test contact 190 may be, for example, part of the same leadframe.
Fig. 6 is a flow chart of a method 600 for manufacturing a molded power semiconductor module. The method 600 may be used, for example, for manufacturing molded power semiconductor modules 100, 400 and 500.
The method 600 includes: a process of providing one or more power semiconductor die at step 601; a process of electrically coupling first and second power contacts to one or more power semiconductor die at step 602, the first and second power contacts including a first side and an opposite second side, respectively; and a process of at least partially encapsulating the one or more power semiconductor die with a molded body at step 603, wherein the molded body has a first side, an opposite second side, and lateral sides connecting the first and second sides such that the first and second power contacts are disposed at a first one of the lateral sides of the molded body, wherein the first sides of the first and second power contacts each include an exposed portion exposed from the molded body, and the second sides of the first and second power contacts include portions disposed vertically below a contour of the respective exposed portion of the first side and at least partially covered by a protruding portion of the molded body, the vertical direction being perpendicular to the first and second sides of the power contacts.
Example
Hereinafter, the molded power semiconductor module and the method for manufacturing the molded power semiconductor module are further explained using specific examples.
Example 1 is a molded power semiconductor module, comprising: one or more power semiconductor die; a molded body at least partially encapsulating the one or more power semiconductor die, the molded body having a first side, an opposite second side, and a lateral side connecting the first side and the second side; first and second power contacts disposed laterally adjacent to each other at a first one of the lateral sides of the molded body and electrically coupled to the one or more power semiconductor die, the first and second power contacts including a first side and an opposite second side, respectively; wherein the first sides of the first and second power contacts each comprise an exposed portion exposed from the molded body, and the second sides of the first and second power contacts comprise portions arranged vertically below the profile of the respective exposed portions of the first sides and at least partially covered by protruding portions of the molded body, wherein the vertical direction is perpendicular to the first and second sides of the power contacts.
Example 2 is the molded power semiconductor module of example 1, wherein the first and second power contacts further comprise lateral sides connecting the first and second sides, wherein the lateral sides of the first power contact are disposed opposite the lateral sides of the second power contact, the molded body completely shielding the opposite lateral sides from each other such that a creepage distance between the first and second power contacts increases.
Example 3 is a molded power semiconductor module according to any one of the preceding examples, wherein the first power contact is configured to carry a positive supply voltage and the second power contact is configured to carry a negative supply voltage.
Example 4 is the molded power semiconductor module according to any one of the preceding examples, wherein the protruding portion is configured to support a respective one of the first and second power contacts to be capable of resisting a mechanical force of 1N or more pressed down onto a first side of the respective one of the first and second power contacts.
Example 5 is the molded power semiconductor module according to any one of the preceding examples, wherein the protruding portion of the molded body has a thickness of 1mm or more, the thickness being measured perpendicular to the first and second sides of the power contact.
Example 6 is the molded power semiconductor module according to any one of the preceding examples, further comprising: at least one further power contact arranged at a second of the lateral sides of the molded body, wherein the at least one further power contact is configured as a contact of the molded power semiconductor module.
Example 7 is the molded power semiconductor module according to any one of the preceding examples, further comprising: a test contact exposed from the molded body and configured to provide an electrical connection to a topside electrode of the one or more power semiconductor dies for electrical testing, wherein the power contact and the test contact are leadframe members.
Example 8 is the molded power semiconductor module according to any one of the preceding examples, further comprising: a control or sensing contact exposed from a first side of the molded body.
Example 9 is the molded power semiconductor module according to any one of the preceding examples, wherein the first and second power contacts are coplanar.
Example 10 is the molded power semiconductor module according to any one of the preceding examples, wherein the molded body further at least partially covers edge portions of the first sides of the first and second power contacts.
Example 11 is the molded power semiconductor module according to any one of the preceding examples, wherein the second side of the molded body is configured to be disposed over a heat sink.
Example 12 is a method for manufacturing a molded power semiconductor module, the method comprising: providing one or more power semiconductor dies; electrically coupling first and second power contacts to the one or more power semiconductor dies, the first and second power contacts each including a first side and an opposite second side; and at least partially encapsulating the one or more power semiconductor die with a molded body, wherein the molded body has a first side, an opposite second side, and lateral sides connecting the first side and the second side such that the first and second power contacts are disposed at a first one of the lateral sides of the molded body; wherein a first side of the first and second power contacts each comprise an exposed portion exposed from the molded body, and a second side of the first and second power contacts comprises a portion disposed vertically below a contour of the respective exposed portion of the first side and at least partially covered by a protruding portion of the molded body, the vertical direction being perpendicular to the first and second sides of the power contacts.
Example 13 is the method of example 12, wherein the protruding portion is configured to support a respective one of the first and second power contacts to be capable of resisting a mechanical force of 1N or more pressed down onto a first side of the respective one of the first and second power contacts.
Example 14 is an apparatus having means for performing the method according to example 12 or 13.
Although the disclosure has been shown and described with respect to one or more implementations, alterations and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular regard to the various functions performed by the above described components or structures (assemblies, devices, circuits, systems, etc.), the terms (including a reference to a "means") used to describe such components are intended to correspond, unless otherwise indicated, to any component or structure which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the disclosure.

Claims (13)

1. A molded power semiconductor module (100), comprising:
one or more power semiconductor die (110),
a molded body (120) at least partially encapsulating the one or more power semiconductor die (110), the molded body (120) having a first side (121), an opposite second side (122), and a lateral side (123) connecting the first side (121) and the second side (122),
a first power contact (130) and a second power contact (140) arranged laterally adjacent to each other at a first of the lateral sides (123) of the molded body (120) and electrically coupled to the one or more power semiconductor dies (110), the first power contact (130) and the second power contact (140) each comprising a first side (131, 141) and an opposite second side (132, 142),
wherein the first sides (131, 141) of the first and second power contacts (130, 140) comprise exposed portions exposed from the molded body (120), respectively, and the second sides (132, 142) of the first and second power contacts (130, 140) comprise portions arranged vertically below the contour of the respective exposed portions of the first sides (131, 141) and at least partially covered by protruding portions (120') of the molded body (120), the vertical direction being perpendicular to the first and second sides (131, 141, 142) of the first and second power contacts (130, 140).
2. The molded power semiconductor module (100) of claim 1, wherein the first and second power contacts (130, 140) further comprise lateral sides (133, 143) connecting the first and second sides (131, 141, 132, 142), wherein the lateral sides (133) of the first power contacts (130) are arranged opposite the lateral sides (143) of the second power contacts (140), and
wherein the molded body (120) completely shields the opposite lateral sides (133, 143) from each other such that a creepage distance between the first power contact (130) and the second power contact (140) increases.
3. The molded power semiconductor module (100) of any of the preceding claims, wherein the first power contact (130) is configured to carry a positive supply voltage and the second power contact (140) is configured to carry a negative supply voltage.
4. The molded power semiconductor module (100) of any of the preceding claims, wherein the protruding portion (120') is configured to support a respective one of the first power contact (130) and the second power contact (140) against a mechanical force of 1N or more pressed down onto a first side (131, 141) of the respective one of the first power contact (130) and the second power contact (140).
5. The molded power semiconductor module (100) of any of the preceding claims, wherein the protruding portion (120') of the molded body (120) has a thickness of 1mm or more, the thickness being measured perpendicular to the first (131, 141) and second (132, 142) sides of the first (130) and second (140) power contacts.
6. The molded power semiconductor module (400, 500) of any of the preceding claims, the molded power semiconductor module (400, 500) further comprising:
at least one further power contact (170) arranged at a second one of the lateral sides (123) of the molded body (120),
wherein the at least one further power contact (170) is configured as a phase contact of the molded power semiconductor module (400, 500).
7. The molded power semiconductor module (500) of any of the preceding claims, the molded power semiconductor module (500) further comprising:
test contacts (190) exposed from the molded body (120) and configured to provide electrical connection to topside electrodes of the one or more power semiconductor dies (110) for electrical testing,
wherein the first (130) and second (140) power contacts and the test contact (190) are leadframe members.
8. The molded power semiconductor module (400) of any of the preceding claims, the molded power semiconductor module (400) further comprising:
a control or sensing contact (180) exposed from the first side (121) of the molded body (120).
9. The molded power semiconductor module (100) of any of the preceding claims, wherein the first power contact (130) and the second power contact (140) are coplanar.
10. The molded power semiconductor module (100) of any of the preceding claims, wherein the molded body (120) further at least partially covers edge portions of the first sides (131, 141) of the first and second power contacts (130, 140).
11. The molded power semiconductor module (100) of any of the preceding claims, wherein the second side (122) of the molded body (120) is configured to be disposed over a heat sink.
12. A method (600) for manufacturing a molded power semiconductor module, the method (600) comprising:
one or more power semiconductor die are provided (601),
electrically coupling (602) first and second power contacts to the one or more power semiconductor die, the first and second power contacts each including a first side and an opposite second side, an
At least partially encapsulating (603) the one or more power semiconductor die with a molded body, wherein the molded body has a first side, an opposite second side, and lateral sides connecting the first side and the second side, such that the first and second power contacts are disposed at a first one of the lateral sides of the molded body,
wherein a first side of the first and second power contacts each comprise an exposed portion exposed from the molded body, and a second side of the first and second power contacts comprises a portion disposed vertically below a contour of the respective exposed portion of the first side and at least partially covered by a protruding portion of the molded body, wherein the vertical direction is perpendicular to the first and second sides of the first and second power contacts.
13. The method (600) of claim 12, wherein the protruding portion is configured to support the respective one of the first and second power contacts against a mechanical force of 1N or more pressed down onto the first side of the respective one of the first and second power contacts.
CN202310977645.XA 2022-08-04 2023-08-04 Molded power semiconductor module and method for manufacturing same Pending CN117524996A (en)

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