CN117519323A - Pressure control method and device for semiconductor process chamber - Google Patents

Pressure control method and device for semiconductor process chamber Download PDF

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Publication number
CN117519323A
CN117519323A CN202311428617.9A CN202311428617A CN117519323A CN 117519323 A CN117519323 A CN 117519323A CN 202311428617 A CN202311428617 A CN 202311428617A CN 117519323 A CN117519323 A CN 117519323A
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Prior art keywords
opening
angle
target
determining
throttle valve
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CN202311428617.9A
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俞鹏飞
钱心嘉
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Hangzhou Fuxin Semiconductor Co Ltd
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Hangzhou Fuxin Semiconductor Co Ltd
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Priority to CN202311428617.9A priority Critical patent/CN117519323A/en
Publication of CN117519323A publication Critical patent/CN117519323A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Plasma & Fusion (AREA)
  • Automation & Control Theory (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The present disclosure provides a pressure control method and apparatus for a semiconductor process chamber, the method comprising: when the semiconductor process chamber is determined to be pumped, the opening of a throttle valve of the process chamber is controlled, and the opening of the throttle valve is adjusted from the current opening to the target opening in a stepping adjustment mode. According to the embodiment of the disclosure, the opening angle and the opening speed of the throttle valve are controlled, so that the pressure in the process chamber is slowly and gradually reduced, the stability of air flow is ensured, the local instantaneous air countercurrent is eliminated, and the defect of a workpiece to be processed is further reduced.

Description

Pressure control method and device for semiconductor process chamber
Technical Field
The present disclosure relates to pressure control techniques for semiconductor process chambers, and more particularly, to a pressure control method and apparatus for a semiconductor process chamber.
Background
Plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) techniques are widely used in integrated circuit fabrication processes. Typically including gas activation, stabilization, deposition, purging, pumping, and the like. After the deposition step is completed, the unreacted gas and plasma in the gas chamber are pumped out of the gas chamber by pumping treatment to prepare for the next deposition. Normally, when pumping, a Throttle Valve (TV) is fully opened, so that the gas in the gas chamber can be pumped away at a maximum rate. However, the air pumping speed is too high, so that the air pressure in the front-stage pipeline is higher than that in the air chamber at a certain moment in the air pumping process, and the air flows back to the air chamber from the front-stage pipeline. The reverse flow of gas causes the particles being pumped back into the gas chamber, causing the particles to fall to the wafer surface and form defects.
Disclosure of Invention
The present disclosure provides a pressure control method and apparatus for a semiconductor process chamber to at least solve the above technical problems in the prior art.
According to a first aspect of the present disclosure, there is provided a pressure control method of a semiconductor process chamber, comprising:
when the semiconductor process chamber is determined to be pumped, the opening of a throttle valve of the process chamber is controlled, and the opening of the throttle valve is adjusted from the current opening to the target opening in a stepping adjustment mode.
In some embodiments, the adjusting the opening of the throttle valve from the current opening to the target opening in a step adjustment manner includes:
determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the time for adjusting to the target angle, and determining the angle adjusting speed of the throttle valve;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
In some embodiments, the adjusting the opening of the throttle valve from the current opening to the target opening in a step adjustment manner includes:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle amount to be adjusted for each step.
In some embodiments, the adjusting the opening of the throttle valve from the current opening to the target opening in a step adjustment manner includes:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted;
and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number.
In some embodiments, the method further comprises:
determining a target pressure to be adjusted within the semiconductor process chamber;
and determining the target opening of the throttle valve corresponding to the target pressure according to the target pressure and the air extraction speed.
According to a second aspect of the present disclosure, there is provided a pressure control apparatus of a semiconductor process chamber, comprising:
the first determining unit is used for determining whether the semiconductor process chamber is pumped, and triggering the adjusting unit during pumping;
and the adjusting unit is used for controlling the opening of the throttle valve of the process chamber and adjusting the opening of the throttle valve from the current opening to the target opening in a stepping adjustment mode.
In some embodiments, the adjusting unit is further configured to:
determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the time for adjusting to the target angle, and determining the angle adjusting speed of the throttle valve;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
In some embodiments, the adjusting unit is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle amount to be adjusted for each step.
In some embodiments, the adjusting unit is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted;
and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number.
In some embodiments, the apparatus further comprises:
a second determining unit for determining a target pressure to be adjusted in the semiconductor process chamber;
and the third determining unit is used for determining the target opening of the throttle valve corresponding to the target pressure according to the target pressure and the pumping speed.
According to the pressure control method and device for the semiconductor process chamber, when the semiconductor process chamber is determined to be pumped, the opening of the throttle valve of the process chamber is controlled, and the opening of the throttle valve is adjusted from the current opening to the target opening in a stepping adjustment mode. By slowly adjusting the opening of the throttle valve of the process chamber, the pressure of the gas in the foreline is not higher than that of the process chamber when the process chamber is pumped, and the gas is prevented from flowing back to the process chamber from the foreline. According to the embodiment of the disclosure, the opening angle and the opening speed of the throttle valve are controlled, so that the pressure of the process chamber is slowly and gradually reduced, the stability of air flow is ensured, the local instantaneous air countercurrent is eliminated, and the defect of a workpiece to be processed is further reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the disclosure, nor is it intended to be used to limit the scope of the disclosure. Other features of the present disclosure will become apparent from the following specification.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings, in which:
in the drawings, the same or corresponding reference numerals indicate the same or corresponding parts.
FIG. 1 illustrates a flow chart of a method of pressure control of a semiconductor process chamber in accordance with an embodiment of the present disclosure;
FIG. 2 illustrates a gas flow schematic of a Chemical Vapor Deposition (CVD) process chamber according to an embodiment of the disclosure;
fig. 3 is a schematic diagram showing the composition structure of a pressure control device of a semiconductor process chamber according to an embodiment of the present disclosure.
Detailed Description
In order to make the objects, features and advantages of the present disclosure more comprehensible, the technical solutions in the embodiments of the present disclosure will be clearly described in conjunction with the accompanying drawings in the embodiments of the present disclosure, and it is apparent that the described embodiments are only some embodiments of the present disclosure, but not all embodiments. Based on the embodiments in this disclosure, all other embodiments that a person skilled in the art would obtain without making any inventive effort are within the scope of protection of this disclosure.
Fig. 1 shows a flowchart of a pressure control method of a semiconductor process chamber according to an embodiment of the present disclosure, and as shown in fig. 1, the pressure control method of the semiconductor process chamber according to an embodiment of the present disclosure includes the following processing steps:
and 101, controlling the opening of a throttle valve of the process chamber when the semiconductor process chamber is determined to be pumped.
According to the technical scheme, a plurality of cleaning steps are added before air extraction, the opening angle and the opening speed of a Throttle Valve (TV) are controlled, the pressure in a process chamber is slowly and gradually reduced, so that the stability of air flow is ensured, the local instantaneous gas countercurrent is eliminated, and the generation of crystal defects is greatly reduced. According to the technical scheme, the pressure in the process chamber is gradually reduced mainly through controlling the opening angle of the throttle valve, so that the reverse flow of gas to the process chamber is prevented, and defects of semiconductor workpieces such as crystals or wafers are avoided.
Step 102, adjusting the opening of the throttle valve from the current opening to a target opening in a stepping adjustment mode.
Fig. 2 shows a schematic gas flow diagram of a Chemical Vapor Deposition (CVD) process chamber according to an embodiment of the disclosure, as shown in fig. 2, in a plasma CVD process of semiconductor processing, gas enters through a gas pipe (gasline) 1 under the driving action of a remote clean generator 2, and is delivered into the process chamber through a shower head (shower head) 3. As one implementation, nitrogen trifluoride NF may be selected 3 (nitrogen trifluoride). In NF 3 The related processing of the wafer can be realized under the strong pressure and protection of the pressure, and after the processing is finished, the gas in the process chamber needs to be pumped out through a gas pipeline between the process chamber and the pump. On the foreline of the gas pumping, a throttle valve 8 and an isolation valve 9 are provided, the throttle valve 8 being used to control the gas flow rate, and the isolation valve 9 being a switch of the foreline. As shown in fig. 2, in order to ensure the safety of the process chamber, a pressure equalization port is also provided in the process chamber (currently, NF needs to be rapidly performed after wafer processing is completed in order to ensure the efficiency of wafer processing) 3 The gas is pumped from the process chamber, so that the gas pumping process is a one-step in-place mode, namely, the throttle valve is directly and completely opened, so that the pumping speed reaches the maximum, and the gas pumping process can be completed within 2-5 seconds generally.
The embodiment of the disclosure aims at the technical problems, and the pressure in the process chamber is regulated by regulating the opening of the throttle valve in the air extraction process, so that the gas cannot generate a countercurrent phenomenon.
In an embodiment of the present disclosure, adjusting the opening of the throttle valve from a current opening to a target opening in a step adjustment manner specifically includes: and determining the current opening of the throttle valve and the current angle and the target angle corresponding to the target opening respectively, wherein the target opening is the opening to be adjusted, and finally the opening of the throttle valve is adjusted to the target opening so as to meet the processing requirement of the process chamber. In the embodiment of the disclosure, an adjustment stepping mode in the opening adjustment process, that is, the time for adjusting to a target angle needs to be determined, and the angle adjustment speed of the throttle valve is determined; and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
As an implementation manner, determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step; the target opening is the opening to be adjusted, and finally the opening of the throttle valve is adjusted to the target opening so as to meet the processing requirement of the process chamber. In the embodiment of the disclosure, the number of steps of opening adjustment needs to be determined to ensure the processing efficiency of the wafer in the process chamber, and the phenomenon of gas backflow is not caused. In the embodiment of the disclosure, the opening of the throttle valve needs to be adjusted from the current angle to the target angle based on the determined angle amount to be adjusted for each step.
As an implementation manner, determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step; determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted; and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number. In the embodiment of the disclosure, the angle amount to be adjusted for each step needs to be determined according to the target angle and the initial angle, and the gas backflow phenomenon is not caused under the condition of ensuring the adjustment efficiency.
Specifically, for the opening angle control of the throttle valve, the throttle opening angle (angle) at which the pressure is stable in the original-configuration purge step, for example, α, may be determined. In the embodiment of the present disclosure, n (n is a positive integer) cleaning steps may be added after the original configuration cleaning step, where n is determined by the following inequality:
75°<15°*(n+1)+α<90°
the meaning of the above inequality is that in order to ensure that the throttle valve is slowly and stably turned to a fully open state, for example, as an example, the maximum turning angle of all steps after the first cleaning is 15 °, in order to ensure that the throttle valve can be opened to 90 ° during the pumping step, the angle of the throttle valve needs to be adjusted to be between 75 ° and 90 ° during the previous step of pumping, so as to ensure that the gas pumped into the output pipe does not flow back when the gas in the process chamber is pumped.
In the embodiment of the present disclosure, by adjusting the angle corresponding to the opening degree of the TV to the range of 75 ° to 90 °, the throttle valve is considered to be in the fully closed state.
In embodiments of the present disclosure, the throttle valve control mode is changed from an adaptive pressure control to a configuration) controlled mode by changing the pumping mode of the process chamber in-situ to a pressure control mode.
In the embodiment of the disclosure, the throttle valve inclination rate parameter is increased in the configuration to control the throttle valve rotation rate, and the rotation rate can be set for the step of controlling the throttle valve rotation. Typically, the rotation rate is typically set to not more than 5 degrees/second (degree/s). The throttle rotational rate needs to be determined based on various electronically controlled throttle performance parameters.
In the embodiment of the disclosure, in view of the efficiency of wafer processing, the processing duration of the added cleaning step should not be too long, and is generally set to 5 seconds, and the throttle valve is respectively (α+15°), (α+2×15°), …, (α+n×15°), and move to lift (α+15° +n×15°) from front to back according to the sequence of the configuration steps. For the semiconductor processing technology, the processing efficiency and the processing time control need to be considered, and in the embodiment of the disclosure, the gradual adjustment of the pressure in the process chamber can be realized by adding a 2-step cleaning mode, so that the occurrence of gas backflow is avoided.
The manner of throttle angle control of embodiments of the present disclosure is further illustrated by specific examples below, taking undoped silicate glass (Undoped Silicate Glass, USG) as an example of processing of a substrate.
TABLE 1
TABLE 2
Referring to table 2, for the improved process of the embodiment of the disclosure, two steps of cleaning Step 5 and Step 6 are added On the basis of the original configuration, as shown in table 1, and the process steps of the original configuration mainly include 6 steps, namely, gas On, standing (Stab), deposition (Dep), cleaning (pure), removal (Move to Lift) and pumping (Pump), and the process parameter conditions of each Step are shown in table 1.
In embodiments of the present disclosure, the pressure within the process chamber may be slowly reduced in a gradient by increasing the purge, as an example pressure from 2.2 Torr to 0 Torr. The disclosed embodiments introduce a throttle position ramp rate (position ramp rate) and in steps 5,6 and 7, set the pressure mode (PressMode) to an absolute pressure control (AbsCtrl) mode to control the throttle to open slowly to better maintain the stability of the pumping rate. The pressure pattern and parameters may be modified based on the original configuration to accommodate the newly added cleaning step.
Taking the example of 36.5 deg. throttle valve angle when the purge step pressure in the original configuration is stable.
The following inequality is used:
75 ° <15 ° < n+1) +α <90 ° (n is a positive integer)
As can be seen, n=2.
In this example, two cleaning steps are added on the basis of the original configuration according to the technical scheme of the embodiment of the disclosure. The two-step parameter may be set to: time (Time) =5 s; pressure mode (PressMode) =absolute pressure control (AbsCtrl); pressure (Press) =0, throttle valve positions are 52 degrees and 67 degrees, respectively. The removal (Move to Lift) step is adjusted based on the original configuration (ziep) to: pressure mode (PressMode) =absolute pressure control (AbsCtrl); pressure (Press) =0, throttle position (TV position) =82 degrees. For other parameters, reference is made to the definition in the original configuration, and details thereof will not be repeated here.
Fig. 3 is a schematic diagram illustrating a composition structure of a pressure control apparatus of a semiconductor process chamber according to an embodiment of the present disclosure, and as shown in fig. 3, the pressure control apparatus of the semiconductor process chamber according to the embodiment of the present disclosure includes:
a first determining unit 30 for determining whether the semiconductor process chamber is pumped, and triggering the adjusting unit when the semiconductor process chamber is pumped;
and an adjusting unit 31 for controlling the opening of the throttle valve of the process chamber, and adjusting the opening of the throttle valve from the current opening to a target opening in a step-by-step adjustment manner.
In some embodiments, the adjusting unit 31 is further configured to:
determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the time for adjusting to the target angle, and determining the angle adjusting speed of the throttle valve;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
In some embodiments, the adjusting unit 31 is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle amount to be adjusted for each step.
In some embodiments, the adjusting unit 31 is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted;
and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number.
On the basis of the pressure control device of the semiconductor process chamber shown in fig. 3, the pressure control device of the semiconductor process chamber of the embodiment of the disclosure further includes:
a second determining unit (not shown in fig. 3) for determining a target pressure to be adjusted within the semiconductor process chamber;
and a third determining unit (not shown in fig. 3) for determining a target opening degree of the throttle valve corresponding to the target pressure according to the target pressure and the pumping speed.
In an exemplary embodiment, the first determining unit 30, the adjusting unit 31, the calling unit 52, the second determining unit, the third determining unit, etc. may be implemented by one or more central processing units, graphics processors, application specific integrated circuits, digital signal processors, programmable logic devices, complex programmable logic devices, field programmable gate arrays, general purpose processors, controllers, microcontrollers, microprocessors, or other electronic components.
The specific manner in which the various modules and units perform the operations in the apparatus of the above embodiments have been described in detail in connection with the embodiments of the method, and will not be described in detail herein.
According to an embodiment of the present disclosure, the present disclosure also describes a semiconductor workpiece processed under the control of the pressure control method of the semiconductor process chamber of the foregoing embodiment.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (10)

1. A method of pressure control of a semiconductor process chamber, the method comprising:
when the semiconductor process chamber is determined to be pumped, the opening of a throttle valve of the process chamber is controlled, and the opening of the throttle valve is adjusted from the current opening to the target opening in a stepping adjustment mode.
2. The method according to claim 1, wherein the adjusting the opening of the throttle valve from the current opening to a target opening in a stepwise adjustment manner includes:
determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the time for adjusting to the target angle, and determining the angle adjusting speed of the throttle valve;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
3. The method according to claim 1, wherein the adjusting the opening of the throttle valve from the current opening to a target opening in a stepwise adjustment manner includes:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle amount to be adjusted for each step.
4. The method according to claim 1, wherein the adjusting the opening of the throttle valve from the current opening to a target opening in a stepwise adjustment manner includes:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted;
and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number.
5. The method according to any one of claims 2 to 4, further comprising:
determining a target pressure to be adjusted within the semiconductor process chamber;
and determining the target opening of the throttle valve corresponding to the target pressure according to the target pressure and the air extraction speed.
6. A pressure control apparatus for a semiconductor process chamber, the apparatus comprising:
the first determining unit is used for determining whether the semiconductor process chamber is pumped, and triggering the adjusting unit during pumping;
and the adjusting unit is used for controlling the opening of the throttle valve of the process chamber and adjusting the opening of the throttle valve from the current opening to the target opening in a stepping adjustment mode.
7. The apparatus of claim 6, wherein the adjustment unit is further configured to:
determining a current angle and a target angle corresponding to the current opening and the target opening of the throttle valve respectively, determining the time for adjusting to the target angle, and determining the angle adjusting speed of the throttle valve;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle adjustment speed.
8. The apparatus of claim 6, wherein the adjustment unit is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
and adjusting the opening of the throttle valve from the current angle to a target angle based on the determined angle amount to be adjusted for each step.
9. The apparatus of claim 6, wherein the adjustment unit is further configured to:
determining a current opening of the throttle valve and a current angle and a target angle corresponding to a target opening respectively, determining the number of steps adjusted to the target angle, and determining the angle amount required to be adjusted for each step;
determining the time length of each step to be adjusted, and determining the angle adjustment speed of each step based on the angle amount and the time length of each step to be adjusted;
and based on the determined angle adjustment speed of each step, adjusting the opening of the throttle valve from the current angle to the target angle according to the determined step number.
10. The apparatus according to any one of claims 7 to 9, further comprising:
a second determining unit for determining a target pressure to be adjusted in the semiconductor process chamber;
and the third determining unit is used for determining the target opening of the throttle valve corresponding to the target pressure according to the target pressure and the pumping speed.
CN202311428617.9A 2023-10-27 2023-10-27 Pressure control method and device for semiconductor process chamber Pending CN117519323A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311428617.9A CN117519323A (en) 2023-10-27 2023-10-27 Pressure control method and device for semiconductor process chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311428617.9A CN117519323A (en) 2023-10-27 2023-10-27 Pressure control method and device for semiconductor process chamber

Publications (1)

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CN117519323A true CN117519323A (en) 2024-02-06

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