CN117505218A - Method for preparing super-hydrophobic low-refractive-index antireflection film - Google Patents

Method for preparing super-hydrophobic low-refractive-index antireflection film Download PDF

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CN117505218A
CN117505218A CN202311496537.7A CN202311496537A CN117505218A CN 117505218 A CN117505218 A CN 117505218A CN 202311496537 A CN202311496537 A CN 202311496537A CN 117505218 A CN117505218 A CN 117505218A
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polyacrylic acid
refractive index
antireflection film
preparing
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熊政伟
高志鹏
李俊
魏占涛
竹文坤
刘潇如
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Southwest University of Science and Technology
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Abstract

The invention discloses a method for preparing a super-hydrophobic low-refractive-index antireflection film, which comprises the following steps: mixing and stirring polyacrylic acid, absolute ethyl alcohol and ammonia water to obtain sol; adding a certain amount of ethyl orthosilicate into the obtained sol for aging according to a certain time; adding a certain proportion of hexamethyldisilazane into the aged sol, stirring, and standing to obtain sol A; performing plasma cleaning on the substrate by using a plasma cleaning machine; and plating the obtained sol A on a substrate by using a lifting film plating machine at different lifting speeds and immersion times to obtain the super-hydrophobic low-refractive-index antireflection film. The invention uses polyacrylic acid as raw material, prepares the antireflection film with superhydrophobicity and low refractive index by controlling the immersion time and the pulling speed of sol, and provides a new method for further reducing the refractive index of other films.

Description

Method for preparing super-hydrophobic low-refractive-index antireflection film
Technical Field
The invention belongs to the technical field of optical film materials, and particularly relates to a method for preparing a super-hydrophobic low-refractive-index antireflection film.
Background
In optical science, the refractive index of a medium is considered to be one of the most important physical quantities. Since the refractive index of the medium not only controls the phase velocity of the light, but also has an important influence on the refraction, reflection and diffraction of the light at the medium boundaries. To date, considerable research has been conducted on the theory of graded index broadband antireflection films having different refractive index linearities, especially where the surrounding environment is air. Refractive index n of ideal antireflection film 1 The following two conditions must be followed: n. 1 =(n 0* n s ) 1/2 Wherein n is 0 And n s Refractive indices of air and substrate, respectively; d=λ/4n 1 D is the film thickness and λ is the wavelength of incident light. It follows that for a particular substrate, an ideal single layer anti-reflection film is limited in both film refractive index and thickness, especially in refractive index. For example, for a BK7 glass substrate having a refractive index of 1.5151 (633 nm), the refractive index of the thin film is about 1.22 according to the single-layer film refractive index calculation formula; however, such low refractive index materials are common in natureIs not present. Ultra-low refractive index materials such as omnidirectional reflectors, distributed Bragg reflectors, optical microresonators, light emitting diodes are needed in many fields, and therefore, further reduction of the refractive index of the materials is needed to meet the application requirements. One effective way to reduce the refractive index is to introduce voids in the material due to the relationship between refractive index and porosity. Thus, porous SiO 2 The base film is an attractive material for preparing an antireflection film because of its high specific surface area, low dielectric constant, and easily adjustable refractive index value. In view of this, many studies have been conducted to prepare materials with low refractive index. Physical vapor deposition and chemical etching are the simplest two techniques and are currently used in a very large number of ways. However, this preparation method is very expensive and inconvenient to control the refractive index and film thickness of the thin film, and is not suitable for working on a large substrate. Mesoporous SiO may also be used 2 A porous film having a low refractive index and high transparency was prepared. However, the high temperature firing used therein is extremely disadvantageous for some polymer substrates and can generate stress on the glass substrate. Nano etching mesoporous SiO with hydrofluoric acid solution 2 The thin film is prepared by using a toxic and harmful etchant, which is very disadvantageous for mass production. Thus, a method for preparing porous materials in a mild environment is highly desirable.
Disclosure of Invention
It is an object of the present invention to address at least the above problems and/or disadvantages and to provide at least the advantages described below.
To achieve these objects and other advantages and in accordance with the purpose of the invention, there is provided a method of preparing a superhydrophobic, low refractive index antireflection film, comprising:
step one, mixing and stirring polyacrylic acid, absolute ethyl alcohol and ammonia water to obtain sol;
step two, adding a certain amount of ethyl orthosilicate into the sol obtained in the step one for aging according to a certain time;
step three, adding hexamethyldisilazane with a certain proportion into the aged sol, stirring, and standing to obtain sol A;
step four, using a plasma cleaner to clean the substrate by plasma;
and fifthly, plating the sol A obtained in the step three on a substrate by using a lifting film plating machine at different lifting speeds and immersion time to obtain the superhydrophobic low-refractive-index antireflection film.
Preferably, in the first step, the mass-volume ratio of the polyacrylic acid, the absolute ethyl alcohol and the ammonia water is 0.5-0.9 g, 120-160 mL and 5-10 mL.
Preferably, in the first step, the stirring temperature is 25-35 ℃ and the stirring time is 7h.
Preferably, in the second step, the ethyl orthosilicate is added into the mixture for five times, the time interval of the addition is 1h, and the mass-volume ratio of the polyacrylic acid to each time of the addition of the ethyl orthosilicate is 0.5-0.9 g/1 mL.
Preferably, in the third step, the volume mass ratio of the hexamethyldisilazane to the polyacrylic acid in the first step is 3-8 mL, 0.5-0.9 g, the stirring time is 20-40 min, and the standing time is 24h.
Preferably, in the fourth step, the plasma cleaning machine is PCE-6, the cleaning power is 10-60W, and the cleaning time is 2-10 min.
Preferably, in the fifth step, the SiO is plated by a pulling coater at the same pulling speed for a soaking time of 0.1-15 min 2 A film.
Preferably, in the fifth step, siO is plated by a pulling coater at a pulling speed of 20-200 mm/min under the same immersion time 2 A film.
Preferably, the surface of the superhydrophobic low-refractive-index antireflection film is further coated with a surface film, and the preparation method of the surface film comprises the following steps:
s1, anti-reflection modification is carried out on polyacrylic acid to obtain modified polyacrylic acid, and the specific method comprises the following steps:
adding polyacrylic acid into deionized water, stirring and dissolving at 30-50 ℃, and standing to obtain a polyacrylic acid solution; adding sorbitol powder into the polyacrylic acid solution, heating to 60-90 ℃ at a heating rate of 2-6 ℃/min, continuously stirring in the heating process, keeping the stirring rate at 100-300 rpm, keeping the temperature for 1-3 h, and evaporating, concentrating and drying to obtain modified polyacrylic acid solid;
s2, preparing sol B by using butyl titanate and modified polyacrylic acid, wherein the specific method comprises the following steps:
mixing butyl titanate and modified polyacrylic acid according to a certain mass ratio, then adding the mixture into absolute ethyl alcohol, and uniformly stirring to obtain a mixed solution; slowly adding deionized water into the mixed solution, stirring for 20-40 min, adding ammonia water, stirring, and standing for 2-6 h to obtain sol B
S3, lifting and plating the sol B on the surface of the antireflection film plated by the sol A, wherein the specific method comprises the following steps: immersing the substrate plated with the sol A into the sol B, and plating at a pulling speed of 80-120 mm/min to obtain a surface layer film, thereby preparing the antireflection film with the A/B structure.
Preferably, in the S1, the mass volume ratio of polyacrylic acid, sorbitol and deionized water is 10-20 g:2-5 g:120-300 mL;
in the S2, the mass volume ratio of the butyl titanate to the modified polyacrylic acid to the absolute ethyl alcohol to the deionized water to the ammonia water is 0.6-1.0 g to 0.4-0.8 g to 100-160 mL to 60-80 mL to 8-12 mL.
The invention at least comprises the following beneficial effects: the invention takes polyacrylic acid as a main raw material, and obtains the antireflection film with super-hydrophobic and low refractive properties through a sol-gel method.
Meanwhile, the polyacrylic acid is modified in an anti-reflection way by using sorbitol, the light transmittance of the polyacrylic acid is improved, and the anti-reflection film with an A/B double-layer structure is prepared by plating the mixed polyacrylic acid and butyl titanate on the surface of the sol B, so that the refractive index of the anti-reflection film is further reduced.
The invention plates SiO on the substrate by using different lifting speeds and immersion time through the lifting film plating machine 2 Thin films, prepared with a series of SiO's with refractive index varying with the pull rate and immersion time 2 A film; the basis for keeping the sol-gel system unchanged is obtained through summarizing the change ruleOn the basis, the refractive index of the film can be further reduced, the reflectivity can be reduced, the transmittance of the film can be increased, and the thickness of the film can be increased by prolonging the immersion time of the pulling method and increasing the pulling speed. The refractive index of the series of antireflection films can be reduced to 1.192 at the lowest, the transmittance is up to 99%, and the reflectivity is up to 0.5% at the lowest. The method regulates and controls the optical parameters such as film thickness, refractive index, transmittance and the like of the sol-gel film prepared by the Czochralski method under the condition of not changing the characteristics of raw materials and sol, and provides a new method for further reducing the refractive index of other films.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
FIG. 1 is a graph showing the transmittance of the antireflection films prepared in examples 1 to 7 and 12;
FIG. 2 is a graph showing the thickness and refractive index of the antireflection films prepared in examples 1 to 7;
fig. 3 is a graph showing the water contact angle of the antireflection film prepared in example 1 of the present invention.
Detailed Description
The present invention is described in further detail below with reference to the drawings to enable those skilled in the art to practice the invention by referring to the description.
It will be understood that terms, such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
Example 1
The embodiment provides a method for preparing a super-hydrophobic low-refractive-index antireflection film, which comprises the following steps:
step one, taking 0.7g of polyacrylic acid, 140mL of absolute ethyl alcohol and 7mL of ammonia water, mixing and sealing the 3 solutions in a double-neck flask, and magnetically stirring for 7h at the temperature of 30 ℃.
And step two, adding 1ml of ethyl orthosilicate every 1h during the stirring of the solution, adding 5 times in total, and aging for 48h after the stirring is finished.
Step three, adding 5.5mL of hexamethyldisilazane into the aged sol, stirring for 30min, and finally standing for 24h
And fourthly, cleaning the substrate by using a PCE-6 type plasma cleaner with cleaning power of 30W for 5min.
Step five, plating SiO by using a lifting coating machine according to a lifting speed of 200mm/min and a soaking time of 0.1min 2 The film thickness of the film obtained by plating was 244.5nm.
Example 2
The present example provided a method for preparing a superhydrophobic, low refractive index antireflection film, which was different from example 1 in that the pulling speed in step five was 20mm/min, and the remaining steps were the same as example 1, and the film thickness plated in this example was 90.6nm.
Example 3
The present example provided a method for preparing a superhydrophobic, low refractive index antireflection film, which was different from example 1 in that the pulling speed in step five was 50mm/min, and the remaining steps were the same as example 1, and the film thickness plated in this example was 117.3nm.
Example 4
The present example provided a method for preparing a superhydrophobic, low refractive index antireflection film, which was different from example 1 in that the pulling speed in step five was 80mm/min, and the remaining steps were the same as example 1, and the film thickness plated in this example was 137.2nm.
Example 5
The present example provides a method for producing a superhydrophobic, low refractive index antireflection film, which is different from example 1 in that the pulling speed in the fifth step is 120mm/min, the remaining steps are the same as those in example 1, and the film thickness plated in this example is 187.7nm
Example 6
The present example provided a method for preparing a superhydrophobic, low refractive index antireflection film, which was different from example 1 in that the pulling speed in step five was 150mm/min, and the remaining steps were the same as example 1, and the film thickness plated in this example was 224.5nm.
Example 7
The present example provided a method for preparing a superhydrophobic, low refractive index antireflection film, which was different from example 1 in that the pulling speed in step five was 180mm/min, and the remaining steps were the same as example 1, and the film thickness plated in this example was 231.4nm.
Example 8
The present example provides a method for preparing a superhydrophobic, low refractive index anti-reflection film, which is different from example 1 in that the immersion time in the fifth step is 1min, and the remaining steps are the same as example 1.
Example 9
The present example provides a method for preparing a superhydrophobic, low refractive index anti-reflection film, which is different from example 1 in that the immersion time in the fifth step is 5min, and the remaining steps are the same as example 1.
Example 10
The present example provides a method for preparing a superhydrophobic, low refractive index anti-reflection film, which is different from example 1 in that the immersion time in the fifth step is 10min, and the remaining steps are the same as example 1.
Example 11
The present example provides a method for preparing a superhydrophobic, low refractive index anti-reflection film, which is different from example 1 in that the immersion time in the fifth step is 15min, and the remaining steps are the same as example 1.
Example 12
The embodiment provides a method for preparing a superhydrophobic low refractive index antireflection film, which is different from embodiment 1 in that a layer of sol B is coated on the surface of sol A, a surface layer film is coated on the surface of sol A, so as to obtain a double-layer antireflection film with an A/B structure, and the method for preparing the surface layer film by coating the sol B comprises the following steps:
s1, anti-reflection modification is carried out on polyacrylic acid to obtain modified polyacrylic acid, and the specific method comprises the following steps:
adding 15g of polyacrylic acid into 250mL of deionized water, stirring and dissolving at 50 ℃, and standing to obtain a polyacrylic acid solution; adding 5g of sorbitol powder into a polyacrylic acid solution, heating to 80 ℃ at a heating rate of 2 ℃/min, continuously stirring in the heating process, keeping the stirring rate at 150rpm, keeping the temperature for 1h, and evaporating, concentrating and drying to obtain modified polyacrylic acid solid;
s2, preparing sol B by using butyl titanate and modified polyacrylic acid, wherein the specific method comprises the following steps:
1.0g of butyl titanate and 0.8g of modified polyacrylic acid are mixed, then added into 150mL of absolute ethyl alcohol, and uniformly stirred to obtain a mixed solution; slowly adding 60mL of deionized water into the mixed solution, stirring for 40min, adding 8mL of ammonia water, stirring, and standing for 5h to obtain sol B
S3, lifting and plating the sol B on the surface of the antireflection film plated by the sol A, wherein the specific method comprises the following steps: immersing the substrate plated with the sol A into the sol B, and plating at a pulling speed of 100mm/min to obtain a surface layer film, thereby preparing the antireflection film with the A/B double-layer structure.
The transmittance and refractive index of the antireflection films prepared in examples 1-7 and 12 were measured respectively to obtain fig. 1 and 2, and as can be seen from fig. 1 and 2, the antireflection film prepared in example 1 has a refractive index of 1.192 and a transmittance of up to 99% as measured by an ultraviolet spectrophotometer and an ellipsometer, while the antireflection film prepared in example 12 has an a/B bilayer structure prepared by mixing modified polyacrylic acid and butyl titanate and has a refractive index of 1.065, which indicates that the refractive index of the antireflection film prepared in example 12 is significantly better than that of the antireflection film prepared in example 1, and the transmittance of the antireflection film prepared in example 12 is also significantly better than that of example 1. Meanwhile, the water contact angle of the antireflection film prepared in example 1 was measured, and as shown in fig. 3, the water contact angle was 155 ° at any time, indicating that the antireflection film prepared in example 1 has superhydrophobicity.
The number of equipment and the scale of processing described herein are intended to simplify the description of the present invention. Applications, modifications and variations of the present invention will be readily apparent to those skilled in the art.
Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.

Claims (10)

1. A method for preparing a superhydrophobic, low refractive index antireflection film, comprising the steps of:
step one, mixing and stirring polyacrylic acid, absolute ethyl alcohol and ammonia water to obtain sol;
step two, adding a certain amount of ethyl orthosilicate into the sol obtained in the step one for aging according to a certain time;
step three, adding hexamethyldisilazane with a certain proportion into the aged sol, stirring, and standing to obtain sol A;
step four, using a plasma cleaner to clean the substrate by plasma;
and fifthly, plating the sol A obtained in the step three on a substrate by using a lifting film plating machine at different lifting speeds and immersion time to obtain the superhydrophobic low-refractive-index antireflection film.
2. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 1, wherein in the first step, the mass-volume ratio of polyacrylic acid, absolute ethyl alcohol and ammonia water is 0.5-0.9 g:120-160 mL:5-10 mL.
3. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 1, wherein in the first step, the stirring temperature is 25-35 ℃ and the stirring time is 7h.
4. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 1, wherein in the second step, the ethyl orthosilicate is added in five times, the time interval of addition is 1h, and the mass-volume ratio of the polyacrylic acid to each ethyl orthosilicate addition is 0.5-0.9 g/1 ml.
5. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 1, wherein in the third step, the volume mass ratio of hexamethyldisilazane to polyacrylic acid in the first step is 3-8 mL:0.5-0.9 g, the stirring time is 20-40 min, and the standing time is 24h.
6. The method for preparing an anti-reflection film with super-hydrophobic and low refractive index according to claim 1, wherein in the fourth step, the plasma cleaning machine is PCE-6, the cleaning power is 10-60W, and the cleaning time is 2-10 min.
7. The method for preparing an anti-reflection film with super-hydrophobic and low refractive index according to claim 1, wherein in the fifth step, siO is plated by a pulling coater at the same pulling speed for a soaking time of 0.1-15 min 2 A film.
8. The method for preparing an anti-reflection film with superhydrophobic and low refractive index according to claim 1, wherein in the fifth step, siO is plated by a pulling coater at a pulling speed of 20-200 mm/min under the same immersion time 2 A film.
9. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 1, wherein the surface of the super-hydrophobic low refractive index antireflection film is further coated with a surface layer film, and the preparation method of the surface layer film comprises the following steps:
s1, anti-reflection modification is carried out on polyacrylic acid to obtain modified polyacrylic acid, and the specific method comprises the following steps:
adding polyacrylic acid into deionized water, stirring and dissolving at 30-50 ℃, and standing to obtain a polyacrylic acid solution; adding sorbitol powder into the polyacrylic acid solution, heating to 60-90 ℃ at a heating rate of 2-6 ℃/min, continuously stirring in the heating process, keeping the stirring rate at 100-300 rpm, keeping the temperature for 1-3 h, and evaporating, concentrating and drying to obtain modified polyacrylic acid solid;
s2, preparing sol B by using butyl titanate and modified polyacrylic acid, wherein the specific method comprises the following steps:
mixing butyl titanate and modified polyacrylic acid according to a certain mass ratio, then adding the mixture into absolute ethyl alcohol, and uniformly stirring to obtain a mixed solution; slowly adding deionized water into the mixed solution, stirring for 20-40 min, adding ammonia water, stirring, and standing for 2-6 h to obtain sol B
S3, lifting and plating the sol B on the surface of the antireflection film plated by the sol A, wherein the specific method comprises the following steps: immersing the substrate plated with the sol A into the sol B, and plating at a pulling speed of 80-120 mm/min to obtain a surface layer film, thereby preparing the antireflection film with the A/B structure.
10. The method for preparing the super-hydrophobic low refractive index antireflection film according to claim 9, wherein in the S1, the mass volume ratio of polyacrylic acid, sorbitol and deionized water is 10-20 g:2-5 g:120-300 mL;
in the S2, the mass volume ratio of the butyl titanate to the modified polyacrylic acid to the absolute ethyl alcohol to the deionized water to the ammonia water is 0.6-1.0 g to 0.4-0.8 g to 100-160 mL to 60-80 mL to 8-12 mL.
CN202311496537.7A 2023-11-10 2023-11-10 Method for preparing super-hydrophobic low-refractive-index antireflection film Pending CN117505218A (en)

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