CN117499840B - Operation module with sound device - Google Patents
Operation module with sound device Download PDFInfo
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- CN117499840B CN117499840B CN202410007614.6A CN202410007614A CN117499840B CN 117499840 B CN117499840 B CN 117499840B CN 202410007614 A CN202410007614 A CN 202410007614A CN 117499840 B CN117499840 B CN 117499840B
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- 239000003990 capacitor Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000005236 sound signal Effects 0.000 description 23
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R3/00—Circuits for transducers, loudspeakers or microphones
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2420/00—Details of connection covered by H04R, not provided for in its groups
- H04R2420/03—Connection circuits to selectively connect loudspeakers or headphones to amplifiers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses an operation module with an acoustic device, which relates to an operation module with an acoustic function, and comprises a first connection terminal, a second connection terminal, a first transistor, a second MOS (metal oxide semiconductor) tube, a first resistor and a second resistor, wherein an emitter of the first transistor is connected with the first connection terminal, a base of the first transistor is connected with one end of the first resistor, a source of the second MOS tube is connected with a power supply, and a grid of the second MOS tube is connected with the second connection terminal.
Description
Technical Field
The present invention relates to an operation module with audio function, and more particularly, to an operation module with an audio device.
Background
The current operation equipment based on sound is various, the environments of different use of equipment are different, the sensitivity is limited by the strength of non-instruction audio signals, the existing equipment based on sound operation can only shield the audio signals generated by the environment, and the shielding state can not be changed to improve the sensitivity when the electronic equipment is used manually or the continuous non-instruction audio signals are exchanged by people.
Disclosure of Invention
The invention aims to provide an operation module with an acoustic device, the operation module comprises a first connection terminal P1, a second connection terminal P2, a first transistor Q1, a second MOS transistor Q2, a first resistor R1 and a second resistor R2, wherein an emitter of the first transistor Q1 is connected with the first connection terminal P1, a base of the first transistor Q1 is connected with one end of the first resistor R1, a source of the second MOS transistor Q2 is connected with a power supply, a grid of the second MOS transistor Q2 is connected with the second connection terminal P2, a drain of the second MOS transistor Q2 is connected between the base of the first transistor Q1 and the first resistor R1, one end of the second resistor R2 is connected between the drain of the second MOS transistor Q2, the base of the first transistor Q1 and the first resistor R1, and the other end of the first resistor R1 and the second resistor R2 are connected with a grounding end.
Further, the operation module further includes a first operational amplifier U1, a second operational amplifier U2, a third MOS transistor Q3, a fourth MOS transistor Q4, a first diode D1, a third resistor R3, and a fourth resistor R4, where the collector of the first transistor Q1 is connected to the same phase end of the first operational amplifier U1, one end of the third resistor R3 is connected to the power supply, one end of the fourth resistor R4 is connected to the other end of the third resistor R3, the source of the third MOS transistor Q3 is connected between the third resistor R3 and the fourth resistor R4, the drain of the third MOS transistor Q3 is connected to the anode of the first diode D1, the cathode of the first diode D1 is connected to the inverting end of the first operational amplifier U1, the gate of the third MOS transistor Q3 is connected to the same phase end of the first operational amplifier U1, the output end of the first operational amplifier U1 is connected to the gate of the fourth MOS transistor Q4, the drain of the fourth MOS transistor Q4 is connected between the first same phase end of the first transistor Q1 and the first operational amplifier U1, and the other end of the second MOS transistor Q2 is connected to the inverting end of the first diode D1, and the other end of the first transistor Q2 is connected to the inverting end of the first operational amplifier U1.
Further, the operation module further comprises a third connection terminal P3, a sixth resistor R6, a seventh resistor R7, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, an eleventh resistor R11, a twelfth resistor R12, a thirteenth resistor R13, a fourteenth resistor R14, a fifteenth resistor R15, a third operational amplifier U3, a fourth operational amplifier U4, a fifth operational amplifier U5, a fifth transistor Q5 and a sixth transistor Q6, wherein the non-inverting terminal of the third operational amplifier U3 is connected with the source electrode of the fourth MOS transistor Q4, the inverting terminal of the third operational amplifier U3 is connected with one end of the fifth resistor R5, the other end of the fifth resistor R5 is connected with the output terminal of the third operational amplifier U3, one end of the sixth resistor R6 is connected between the drain electrode of the fourth MOS transistor Q4 and the collector electrode of the first transistor Q1, one end of the seventh resistor R7 is connected with the other end of the sixth resistor R6, the same phase end of the fourth operational amplifier U4 is connected between the sixth resistor R6 and the seventh resistor R7, the output end of the fourth operational amplifier U4 is connected with one end of the eighth resistor R8, one end of the ninth resistor R9 is connected with the other end of the eighth resistor R8, the inverting end of the fourth operational amplifier U4 is connected between the eighth resistor R8 and the ninth resistor R9, the other end of the ninth resistor R9 is connected between the output end of the third operational amplifier U3 and the fifth resistor R5, one end of the eleventh resistor R11 is connected between the output end of the fourth operational amplifier U4 and the eighth resistor R8, one end of the tenth resistor R10 is connected with the other end of the eleventh resistor R11, the other end of the tenth resistor R10 is connected between the output end of the third operational amplifier U3, the fifth resistor R5 and the ninth resistor R9, the same phase end of the fifth operational amplifier U5 is connected between the tenth resistor R10 and the eleventh resistor R11, the output end of the fifth operational amplifier U5 is connected with one end of the twelfth resistor R12, one end of a thirteenth resistor R13 is connected with the other end of the twelfth resistor R12, the inverting end of a fifth operational amplifier U5 is connected between the twelfth resistor R12 and the thirteenth resistor R13, the emitter of the fifth transistor Q5 is connected between the output end of the fifth operational amplifier U5 and the twelfth resistor R12, the base of the fifth transistor Q5 is connected with one end of a fourteenth resistor R14, one end of a fifteenth resistor R15 is connected with the collector of the fifth transistor Q5, a third connecting terminal P3 is arranged between the fifteenth resistor R15 and the collector of the fifth transistor Q5, the collector of a sixth transistor Q6 is connected with the output end of a fourth operational amplifier U4, the base of the sixth transistor Q6 is connected with the output end of a second operational amplifier U2, the emitter of the sixth transistor Q6, the other end of the seventh resistor R7, the other end of the thirteenth resistor R13, the other end of the fourteenth resistor R14, and the other end of the fifteenth resistor R15 are connected with a grounding end.
Further, the operation module further includes a sixth operational amplifier U6, a sixteenth resistor R16, a second diode D2, and a first capacitor C1, where an in-phase end of the sixth operational amplifier U6 is connected between the gate of the third MOS transistor Q3 and the in-phase end of the first operational amplifier U1, an inverting end of the sixth operational amplifier U6 is connected to one end of the sixteenth resistor R16, another end of the sixteenth resistor R16 is connected to an output end of the sixth operational amplifier U6, an anode of the second diode D2 is connected between the sixteenth resistor R16 and the output end of the sixth operational amplifier U6, a cathode of the second diode D2 is connected between the cathode of the first diode D1, the inverting end of the first operational amplifier U1, and the in-phase end of the second operational amplifier U2, one end of the first capacitor C1 is connected to the cathode of the first diode D1, the cathode of the second diode D2, the inverting end of the first operational amplifier U1, and another end of the first capacitor C1 is connected to the ground.
Further, the operation module further includes a fourth connection terminal P4, a seventh MOS transistor Q7, and a third diode D3, where a drain of the seventh MOS transistor Q7 is connected between the non-inverting terminal of the second operational amplifier U2 and the inverting terminal of the first operational amplifier U1, a gate of the seventh MOS transistor Q7 is connected to an anode of the third diode D3, a fourth connection terminal P4 is disposed between the gate of the seventh MOS transistor Q7 and the anode of the third diode D3, a cathode of the third diode D3 is connected between a base of the fifth transistor Q5 and a fourteenth resistor R14, and a source of the seventh MOS transistor Q7 is connected to a ground terminal.
Further, the operation module further includes a seventeenth resistor R17 and a fourth light emitting diode D4, one end of the seventeenth resistor R17 is connected between the anode of the third diode D3 and the gate of the seventh MOS transistor Q7, one end of the fourth light emitting diode D4 is connected with the other end of the seventeenth resistor R17, and the other end of the fourth light emitting diode D4 is connected with the ground terminal.
Further, the operation module further includes an eighteenth resistor R18, one end of the eighteenth resistor R18 is connected to the gate of the second MOS transistor Q2, and the other end of the eighteenth resistor R18 is connected to the ground terminal.
Further, the operation module further includes a nineteenth resistor R19, one end of the nineteenth resistor R19 is connected between the gate of the fourth MOS transistor Q4 and the output end of the first operational amplifier U1, and the other end of the nineteenth resistor R19 is connected with the ground end.
Further, the operation module further includes a twentieth resistor R20, one end of the twentieth resistor R20 is connected between the source of the fourth MOS transistor Q4 and the in-phase end of the third operational amplifier U3, and the other end of the twentieth resistor R20 is connected with the ground end.
Further, the operation module further includes a second first resistor R21, one end of the second first resistor R21 is connected between the gate of the seventh MOS transistor Q7 and the seventeenth resistor R17, and the other end of the second first resistor R21 is connected with the ground terminal.
Compared with the prior art, the invention has the beneficial effects that:
The invention can operate the equipment in a voice instruction mode, can carry out solid-state shielding based on the maximum amplitude of the audio signal generated by environmental noise, can change the shielding state into a dynamic shielding state when the continuous non-instruction audio signal is generated by manually using the electronic equipment or exchanging personnel, and improves the operation sensitivity.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the drawings needed in the prior art and the embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of an overall structure provided by the present invention.
Detailed Description
In order that the objects and advantages of the invention will become more readily apparent, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings, it being understood that the following text is only intended to describe one or more specific embodiments of the invention and is not intended to limit the scope of the invention as defined in the appended claims.
Referring to fig. 1, in this embodiment, the second connection terminal P2 is connected to the switch, the working signal is given by an operator, when the operator gives the working signal, the signal is fed back to the gate of the second MOS transistor Q2 through the second connection terminal P2, the voltage difference between the gate of the second MOS transistor Q2 and the source of the second MOS transistor Q2 is lower than the conduction threshold, the second MOS transistor Q2 is turned off, the eighteenth resistor R18 is used for discharging the parasitic capacitance of the gate of the second MOS transistor Q2, the first connection terminal P1 is connected to the microphone, the voice command is converted into an audio pulse signal through the microphone and fed back to the emitter of the first transistor Q1 through the first connection terminal P1, and when the operator sends the voice command, the audio signal is fed back to the emitter of the first transistor Q1 through the emitter of the first transistor Q1, the base of the first transistor Q1, the first resistor R1 to the ground loop, so that the emitter of the first transistor Q1 and the base of the first transistor Q1 are forward biased, the first transistor Q1 is turned on, and the collector of the first transistor Q1 feeds back the audio signal.
Referring to fig. 1, in this embodiment, considering that a voice command is affected by an audio signal generated by an environment, the signal amplitude between the third resistor R3 and the fourth resistor R4 is the amplitude of a shielding signal, which is used for shielding the audio signal generated by the environmental noise, the signal between the third resistor R3 and the fourth resistor R4 is fed back to the inverting terminal of the first operational amplifier U1 through the source electrode of the third MOS transistor Q3, the drain electrode of the third MOS transistor Q3 and the first diode D1, the potential of the first capacitor C1 rises, the collector signal of the first transistor Q1 is fed back to the non-inverting terminal of the first operational amplifier U1, when the amplitude of the audio signal is higher than the amplitude of the shielding signal, the signal is fed back to the gate electrode of the fourth MOS transistor Q4, the differential pressure between the gate electrode of the fourth MOS transistor Q4 and the source electrode of the fourth MOS transistor Q4 is higher than the on threshold, the nineteenth resistor R19 is used for discharging parasitic capacitance of the gate electrode of the fourth MOS transistor Q4, when the amplitude of the audio signal is higher than the amplitude of the fourth MOS transistor Q4, and the parasitic capacitance is lower than the fourth MOS transistor Q4 in the normal state, and the fourth MOS transistor Q4 is in the normal state, and the parasitic state is discharged when the amplitude is in the fourth state.
Referring to fig. 1, in this embodiment, the collector signal of the first transistor Q1 is fed back to the ground loop through the drain of the fourth MOS transistor Q4, the source of the fourth MOS transistor Q4, and the twentieth resistor R20, the signal between the source of the fourth MOS transistor Q4 and the twentieth resistor R20 is fed back to the in-phase end of the third operational amplifier U3, when the amplitude of the audio signal rises to the amplitude of the conducting threshold voltage between the gate of the fourth MOS transistor Q4 and the source of the fourth MOS transistor Q4, and the amplitude of the audio signal continues to rise, the maximum amplitude of the signal feedback between the source of the fourth MOS transistor Q4 and the twentieth resistor R20 is lower than the amplitude of the audio signal, the in-phase end of the third operational amplifier U3 cannot obtain complete signal feedback, the inverting end of the third operational amplifier U3 is connected through the fifth resistor R5 and the negative feedback of the output end of the third operational amplifier U3 to prevent the signal interference of the lower circuit, and the collector signal of the first transistor Q1 is fed back to the ground loop through the sixth resistor R6 and the seventh resistor R7, the signals between the sixth resistor R6 and the seventh resistor R7 are fed back to the same phase end of the fourth operational amplifier U4, the signals at the output end of the fourth operational amplifier U4 are fed back to the position between the output end of the third operational amplifier U3 and the fifth resistor R5 after passing through the eighth resistor R8 and the ninth resistor R9, the signals between the eighth resistor R8 and the ninth resistor R9 are fed back to the inverting end of the fourth operational amplifier U4 so as to enable the output end of the fourth operational amplifier U4 to output compensation signals, the signals between the tenth resistor R10 and the eleventh resistor R11 are fed back to the same phase end of the fifth operational amplifier U5, the signals at the output end of the fifth operational amplifier U5 are fed back to a grounding end loop through the twelfth resistor R12 and the thirteenth resistor R13, the signals between the twelfth resistor R12 and the thirteenth resistor R13 are fed back to the inverting end of the fifth operational amplifier U5 so as to enable the signals at the output end of the fifth operational amplifier U5 to be integrated signals, meanwhile, the output end signal of the fifth operational amplifier U5 is fed back to the executing mechanism through the fifth transistor Q5 emitter, the fifth transistor Q5 base and the fourteenth resistor R14 to the grounding end loop, so that the fifth transistor Q5 emitter and the fifth transistor Q5 base are forward biased, the fifth transistor Q5 is conducted, the output end signal of the fifth operational amplifier U5 is fed back to the grounding end loop through the fifth transistor Q5 emitter, the fifth transistor Q5 collector and the fifteenth resistor R15, and the integrated audio instruction signal is fed back to the executing mechanism through the third connecting terminal P3, so that the shielding effect is improved, and meanwhile, the complete audio instruction signal is obtained.
Referring to fig. 1, in this embodiment, considering that an audio signal is continuously generated when an electronic device or a person exchanges, the audio signal is a non-instructive audio signal, the amplitude of the non-instructive audio signal is higher than the amplitude of an audio signal generated by ambient noise, when an executing mechanism does not make an executing command and the audio signal continuously exists, an output end of a sixth operational amplifier U6 is connected with an inverting end negative feedback of the sixth operational amplifier U6 through a sixteenth resistor R16, a collector signal of a first transistor Q1 is fed back to a gate electrode of a third MOS transistor Q3, a voltage difference between a gate electrode of the third MOS transistor Q3 and a source electrode of the third MOS transistor Q3 is lower than a conduction threshold value, the third MOS transistor Q3 is turned off, meanwhile, the collector signal of the first transistor Q1 is synchronously fed back to an in-phase end of the sixth operational amplifier U6, a potential between the output end of the sixth operational amplifier U6 and the sixteenth resistor R16 is increased again through a second diode D2, an increasing speed of the potential of the first capacitor C1 can be changed, the capacitance value of the first capacitor C1 is set as required, and when the potential of the first capacitor C1 is decreased, and the amplitude of the audio signal is continuously kept at the same state as the current state, or the amplitude of the electronic device is stopped.
Referring to fig. 1, in this embodiment, when the executing mechanism obtains signal feedback through the third connection terminal P3, the executing mechanism recognizes and executes a corresponding instruction and broadcasts an execution instruction code, during execution, the executing mechanism continuously feeds back a signal response piece in execution through the fourth connection terminal P4, the signal feedback is performed to the gate of the seventh MOS transistor Q7, the voltage difference between the gate of the seventh MOS transistor Q7 and the source of the seventh MOS transistor Q7 is higher than the conduction threshold, the seventh MOS transistor Q7 is turned on, the first capacitor C1 signal is fed back to the ground loop through the drain of the seventh MOS transistor Q7 and the source of the seventh MOS transistor Q7, meanwhile, the fourth connection terminal P4 signal is fed back between the base of the fifth transistor Q5 and the fourteenth resistor R14 through the third diode D3, the base of the fifth transistor Q5 and the emitter of the fifth transistor Q5 are reversely biased, the fifth transistor Q5 is turned off, the executing mechanism obtains the execution signal again when the execution is not completed, and meanwhile, the fourth connection terminal P4 signal is fed back to the ground loop through the seventeenth resistor R17 and the fourth light emitting diode D4 to the ground loop, and the fourth light emitting diode D4 is turned on, and the command is turned on.
Based on the scheme, the device can be operated in a voice instruction mode, solid shielding can be carried out based on the maximum amplitude of the audio signal generated by environmental noise, and the shielding state can be changed into a dynamic shielding state when the continuous non-instruction audio signal generated by manual use of the electronic device or personnel communication is carried out, so that the operation sensitivity is improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.
Claims (6)
1. An operation module with an acoustic device is characterized in that the operation module comprises a first connection terminal, a second connection terminal, a first transistor, a second MOS tube, a first resistor and a second resistor, wherein the emitter of the first transistor is connected with the first connection terminal, the base of the first transistor is connected with one end of the first resistor, the source of the second MOS tube is connected with a power supply, the grid of the second MOS tube is connected with the second connection terminal, the drain of the second MOS tube is connected between the base of the first transistor and the first resistor, one end of the second resistor is connected between the drain of the second MOS tube, the base of the first transistor and the first resistor, the other ends of the first resistor and the second resistor are connected with a grounding end, the second connection terminal P2 is connected with a switch, a working signal is given by an operator, the first connection terminal P1 is connected with a microphone, the voice command is converted into an audio pulse signal by a microphone and is fed back to the emitter of the first transistor through a first connecting terminal P1, the operation module further comprises a first operational amplifier, a second operational amplifier, a third MOS tube, a fourth MOS tube, a first diode, a third resistor and a fourth resistor, the collector electrode of the first transistor is connected with the same-phase end of the first operational amplifier, one end of the third resistor is connected with a power supply, one end of the fourth resistor is connected with the other end of the third resistor, the source electrode of the third MOS tube is connected between the third resistor and the fourth resistor, the drain electrode of the third MOS tube is connected with the anode of the first diode, the cathode of the first diode is connected with the inverting end of the first operational amplifier, the grid electrode of the third MOS tube is connected with the same-phase end of the first operational amplifier, the output end of the first operational amplifier is connected with the grid electrode of the fourth MOS tube, the drain electrode of the fourth MOS tube is connected between the collector electrode of the first transistor and the same-phase end of the first operational amplifier, the non-inverting terminal of the second operational amplifier is connected between the cathode of the first diode and the inverting terminal of the first operational amplifier, the inverting terminal of the second operational amplifier is connected between the non-inverting terminal of the first operational amplifier and the grid electrode of the third MOS tube, the other end of the fourth resistor is connected with the grounding terminal, the operational module also comprises a third connecting terminal, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, an eleventh resistor, a twelfth resistor, a thirteenth resistor, a fourteenth resistor, a fifteenth resistor, a third operational amplifier, a fourth operational amplifier, a fifth transistor and a sixth transistor, the non-inverting terminal of the third operational amplifier is connected with the source electrode of the fourth MOS tube, the inverting terminal of the third operational amplifier is connected with one end of the fifth resistor, the other end of the fifth resistor is connected with the output end of the third operational amplifier, one end of a sixth resistor is connected between the drain electrode of the fourth MOS tube and the collector electrode of the first transistor, one end of a seventh resistor is connected with the other end of the sixth resistor, the same-phase end of the fourth operational amplifier is connected between the sixth resistor and the seventh resistor, the output end of the fourth operational amplifier is connected with one end of an eighth resistor, one end of a ninth resistor is connected with the other end of the eighth resistor, the inverting end of the fourth operational amplifier is connected between the eighth resistor and the ninth resistor, the other end of the ninth resistor is connected between the output end of the third operational amplifier and the fifth resistor, one end of the eleventh resistor is connected between the output end of the fourth operational amplifier and the eighth resistor, the other end of the tenth resistor is connected between the output end of the third operational amplifier, the fifth resistor and the ninth resistor, the same-phase end of the fifth operational amplifier is connected between the tenth resistor and the eleventh resistor, the output end of the fifth operational amplifier is connected with one end of a twelfth resistor, one end of the thirteenth resistor is connected with the other end of the twelfth resistor, the inverting end of the fifth operational amplifier is connected between the twelfth resistor and the thirteenth resistor, the emitter of the fifth transistor is connected between the output end of the fifth operational amplifier and the twelfth resistor, the base of the fifth transistor is connected with one end of a fourteenth resistor, one end of the fifteenth resistor is connected with the collector of the fifth transistor, a third connecting terminal is arranged between the fifteenth resistor and the collector of the fifth transistor, the collector of the sixth transistor is connected with the output end of the fourth operational amplifier, the base of the sixth transistor is connected with the output end of the second operational amplifier, the integrated audio command signal is fed back to the executing mechanism through the third connecting terminal P3, the emitter of the sixth transistor, the other end of the seventh resistor, the other end of the thirteenth resistor, the other end of the fourteenth resistor, the other end of the fifteenth resistor and the grounding end are connected, the operational amplifier, the non-phase end of the sixteenth resistor, the second diode and the first capacitor are connected between the non-phase end of the sixteenth resistor and the first operational amplifier, the non-phase end of the sixteenth resistor and the sixteenth resistor are connected between the non-phase end of the sixth operational amplifier and the output end of the sixteenth resistor, the non-phase end of the sixteenth resistor and the sixteenth resistor is connected with the non-phase end of the output end of the sixth operational amplifier, the non-phase of the fourth operational amplifier is connected between the non-phase end of the sixth resistor and the output end of the integrated audio command signal is connected between the non-phase and the output end of the integrated output signal, the operation module further comprises a fourth connecting terminal, a seventh MOS tube and a third diode, wherein the drain electrode of the seventh MOS tube is connected between the non-inverting end of the second operational amplifier and the inverting end of the first operational amplifier, the grid electrode of the seventh MOS tube is connected with the anode of the third diode, the fourth connecting terminal is arranged between the grid electrode of the seventh MOS tube and the anode of the third diode, the executing mechanism continuously feeds back a signal response piece in execution through the fourth connecting terminal P4 in the execution process, the cathode of the third diode is connected between the base electrode of the fifth transistor and the fourteenth resistor, and the source electrode of the seventh MOS tube is connected with the grounding end.
2. The operation module with an acoustic device according to claim 1, further comprising a seventeenth resistor and a fourth light emitting diode, wherein one end of the seventeenth resistor is connected between the anode of the third diode and the gate of the seventh MOS transistor, one end of the fourth light emitting diode is connected to the other end of the seventeenth resistor, and the other end of the fourth light emitting diode is connected to the ground.
3. The operation module with the acoustic device according to claim 1, wherein the operation module further comprises an eighteenth resistor, one end of the eighteenth resistor is connected with the gate of the second MOS transistor, and the other end of the eighteenth resistor is connected with the ground terminal.
4. The operating module with an acoustic device according to claim 1, further comprising a nineteenth resistor, wherein one end of the nineteenth resistor is connected between the gate of the fourth MOS transistor and the output terminal of the first operational amplifier, and the other end of the nineteenth resistor is connected to the ground terminal.
5. The operation module with an acoustic device according to claim 1, further comprising a twentieth resistor, wherein one end of the twentieth resistor is connected between the source of the fourth MOS transistor and the in-phase end of the third operational amplifier, and the other end of the twentieth resistor is connected to the ground.
6. The operating module with an acoustic device according to claim 2, further comprising a second first resistor, wherein one end of the second first resistor is connected between the gate of the seventh MOS transistor and the seventeenth resistor, and the other end of the second first resistor is connected to the ground terminal.
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| CN202410007614.6A CN117499840B (en) | 2024-01-03 | 2024-01-03 | Operation module with sound device |
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| CN202410007614.6A CN117499840B (en) | 2024-01-03 | 2024-01-03 | Operation module with sound device |
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| CN117499840B true CN117499840B (en) | 2024-04-30 |
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| US5939945A (en) * | 1996-07-25 | 1999-08-17 | Siemens Aktiengesellschaft | Amplifier with neuron MOS transistors |
| CN105375884A (en) * | 2015-11-24 | 2016-03-02 | 宁波柏人艾电子有限公司 | Loudspeaker box power amplification circuit |
| CN210536928U (en) * | 2019-10-18 | 2020-05-15 | 北京声智科技有限公司 | Gating circuit, microphone array circuit and sound box |
| CN216957441U (en) * | 2022-01-12 | 2022-07-12 | 广东得胜电子有限公司 | Voice recognition opening and closing circuit for charging bin |
| CN114630235A (en) * | 2022-01-26 | 2022-06-14 | 惠州华阳通用电子有限公司 | Call voice acquisition system and control method thereof |
| CN218734958U (en) * | 2022-08-31 | 2023-03-24 | 深圳市声通科技有限公司 | Bone conduction type hearing aid wearing detection circuit and bone conduction type hearing aid |
| CN116709153A (en) * | 2023-06-13 | 2023-09-05 | 广州市锐丰数字科技有限公司 | Power amplifier equipment |
| CN116683878A (en) * | 2023-08-02 | 2023-09-01 | 深圳市橙视科技发展有限公司 | Audio output control circuit and audio player |
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| CN117499840A (en) | 2024-02-02 |
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