CN117498816A

CN117498816A - Matching circuit, power amplifier and radio frequency front end module

Info

Publication number: CN117498816A
Application number: CN202311514889.0A
Authority: CN
Inventors: 濮天鸿; 胡自洁; 张海兵; 杜兴宇; 苏力; 倪建兴
Original assignee: Radrock Shenzhen Technology Co Ltd
Current assignee: Radrock Shenzhen Technology Co Ltd
Priority date: 2023-11-13
Filing date: 2023-11-13
Publication date: 2024-02-02

Abstract

The embodiment of the application provides a matching circuit, a power amplifier and a radio frequency front end module, wherein the matching circuit comprises a matching inductance element, an adjusting inductance element and a control component, one end of the control component is connected with a sampling end of the matching circuit, and the other end of the control component is connected with one end of the adjusting inductance element; the other end of the adjusting inductance element is grounded, and when the signal of the sampling end is larger than or equal to a preset signal, the control component is conducted, so that the adjusting inductance element is electrified and is in mutual inductance coupling with the matching inductance element. The matching circuit can at least partially offset and even completely offset nonlinearity generated in the power amplifier due to different output power of the power amplifier when applied to the power amplifier, and improves the performance of the power amplifier.

Description

Matching circuit, power amplifier and radio frequency front end module

Technical Field

The application relates to the technical field of communication, in particular to a matching circuit, a power amplifier and a radio frequency front end module.

Background

Radio frequency power amplifiers (RF PAs) are an integral part of the transmission system. In the front-end circuit of the transmitter, the power of the radio frequency signal generated by the modulation oscillation circuit is very small, and the radio frequency signal can be fed to the antenna to radiate after a series of amplification (such as a buffer stage, an intermediate amplification stage and a final power amplification stage) is needed to obtain enough radio frequency power. In order to obtain a sufficiently large radio frequency output power, an RF PA is used. After the modulator generates the RF signal, the RF modulated signal is amplified by the RF PA to a sufficient power, passed through the matching network, and then transmitted by the antenna.

The RF PA includes GaAs HBT (Heterojunction Bipolar Transistor ) power amplifier and Si CMOS power amplifier in its process. Wherein the HBT is a bipolar transistor comprised of a gallium arsenide (GaAs) layer and an aluminum gallium arsenide (AlGaAs) layer.

The RF PA may include an input, a matching circuit, and an output, where the matching circuit generally includes at least one inductive element, the inductance of which is fixed, and since the HBT device is a nonlinear device, if the inductance of the matching circuit is fixed when the output power of the RF PA is different, the problem of nonlinearity of the RF PA may occur.

Disclosure of Invention

The embodiment of the application provides a matching circuit, a power amplifier and a radio frequency front end module, and the embodiment of the application can at least partially offset or even completely offset nonlinearity generated by the power amplifier due to different output power of the power amplifier, so that the performance of the power amplifier is improved.

The embodiment of the application provides a matching circuit, which comprises:

a sampling end;

matching the inductive element;

adjusting the inductive element; and

one end of the control component is connected with the sampling end, and the other end of the control component is connected with one end of the adjusting inductance element;

The control component is conducted when the signal of the sampling end is larger than or equal to a preset signal, so that the adjusting inductance element is electrified and is in mutual inductance coupling with the matching inductance element.

In an optional embodiment of the present application, the control component has at least one group, the adjusting inductance element has at least one group, the number of the control components is the same as the number of the adjusting inductance elements, and each control component is correspondingly connected with one adjusting inductance element.

In an alternative embodiment of the present application, the control assembly includes a first control assembly and a second control assembly, and the adjusting inductance element includes a first adjusting inductance element and a second adjusting inductance element;

one end of the first control component is connected with the sampling end, the other end of the first control component is connected with one end of the first adjusting inductance element, and the other end of the first adjusting inductance element is grounded;

one end of the second control component is connected with the sampling end, the other end of the second control component is connected with one end of the second adjusting inductance element, and the other end of the second adjusting inductance element is grounded.

one end of the second control component is connected with the other end of the first control component, the other end of the second control component is connected with one end of the second adjusting inductance element, and the other end of the second adjusting inductance element is grounded.

In an alternative embodiment of the present application, the adjusting inductance element has one, the matching inductance element has a plurality of matching inductance elements, a plurality of matching inductance elements are connected with each other, and a plurality of matching inductance elements are coupled with the same adjusting inductance element in a mutual inductance manner.

In an alternative embodiment of the present application, at least one of the matching inductance elements is wound around the tuning inductance element; and/or

At least one of the matching inductance elements and the tuning inductance element are located in different planes, and projections on a first plane are at least partially overlapped, and the first plane is approximately parallel to the plane in which the tuning inductance element is located.

In an alternative embodiment of the present application, the matching inductance element includes a first matching inductance element, a second matching inductance element, and a third matching inductance element;

one end of the first matching inductance element is connected with the input end of the matching circuit, one end of the second matching inductance element is connected between the other end of the first matching inductance element and one end of the third matching inductance element, the other end of the second matching inductance element is grounded, and the other end of the third matching inductance element is connected with the output end of the matching circuit;

in an alternative embodiment of the present application, the first matching inductance element and the adjusting inductance element are located on the same plane, and the first matching inductance element is wound around the adjusting inductance element;

the second matching inductance element and the third matching inductance element are located in different planes from the adjustment inductance element and at least partially overlap with the projection of the adjustment inductance element and the first matching inductance element on the first plane.

In an alternative embodiment of the present application, the adjusting inductance element has a plurality, and the matching inductance element has one;

A plurality of the adjusting inductance elements are in mutual inductance coupling with the same matching inductance element;

at least one of the plurality of regulated inductive elements is mutually inductive with the matching inductive element when the corresponding control component is conducted.

In an optional implementation manner of the present application, the sampling end is an input end or an output end of the matching circuit;

the matching inductance element is connected with the input end or the output end;

the control component is connected with the input end or the output end.

In an optional implementation manner, the control component is a unidirectional conduction device, and the control component can unidirectional conduct the inductance adjusting element according to a preset signal size of the sampling end.

In an alternative embodiment of the present application, the control component includes a diode, an anode of the diode is connected to the matching inductance element, and a cathode of the diode is connected to one end of the adjusting inductance element; or alternatively

The control assembly comprises a triode, wherein the base electrode of the triode is connected with the matching inductance element, the base electrode of the triode is in short circuit with the collector electrode of the triode, and the emitter electrode of the triode is connected with one end of the adjusting inductance element.

In an optional implementation manner of the present application, the matching circuit further includes a first capacitor, one end of the first capacitor is connected to one end of the matching inductance element, and the other end of the first capacitor is grounded or connected to one end of the adjusting inductance element.

In an alternative embodiment of the present application, the first capacitor is connected in parallel with the diode or the triode.

In an alternative embodiment of the present application, the control assembly further includes a second capacitor, and the second capacitor is connected in parallel with the diode or the triode.

In an optional implementation manner of the present application, when the power of the sampling end is greater than or equal to a first preset power, the first control component turns on the first adjusting inductance element and the matching inductance element, and the first adjusting inductance element and the matching inductance element are coupled in a mutual inductance manner;

when the power of the sampling end is larger than or equal to a second preset power, the second control component conducts the second adjusting inductance element and the matching inductance element, and the second adjusting inductance element and the matching inductance element are in mutual inductance coupling;

wherein the first preset power and the second preset power are different.

The embodiment of the application provides a power amplifier, which comprises:

At least one power amplifying circuit; and

the matching circuit is any one of the matching circuits, and the matching circuit is connected with at least one power amplifying circuit.

In an alternative embodiment, the power amplifier includes a plurality of power amplifying circuits, and the power amplifying circuits are connected to form a multi-stage power amplifying circuit;

the matching circuit is arranged at the input end of a first stage power amplifying circuit in the multi-stage power amplifying circuit, or the matching circuit is arranged at the output end of a last stage power amplifying circuit in the multi-stage power amplifying circuit, or the matching circuit is arranged between any two adjacent stages of power amplifying circuits in the multi-stage power amplifying circuit.

In an alternative embodiment of the present application, the power amplifier further includes at least one balun, and at least one primary coil and/or secondary coil of the balun is the matching inductance element.

In an alternative embodiment of the present application, the power amplifier is integrated within a GaAs HBT chip.

The embodiment of the application provides a radio frequency front end module, it includes:

a substrate; and

the chip is arranged on the substrate;

A power amplifier as claimed in any preceding claim, the power amplifying circuit in the power amplifier being integrated within the chip.

In an alternative embodiment of the present application, the substrate includes a plurality of metal layers;

the adjusting inductance element and at least one matching inductance element are arranged on the same metal layer of the substrate, or

The adjusting inductance element and at least one matching inductance element are arranged on different metal layers of the substrate, and at least one matching inductance element arranged on different metal layers of the substrate and the projection of the adjusting inductance element on one metal layer of the substrate are at least partially overlapped.

In an alternative embodiment of the present application, the matching circuit is integrated within the chip, and the chip includes a plurality of metal layers;

The embodiment of the application also provides a matching circuit, which is applied to the GaAs HBT power amplifier, and comprises a matching inductance element, an adjusting inductance element and a control component, wherein one end of the control component is connected with a sampling end of the matching circuit, the other end of the control component is connected with one end of the adjusting inductance element, the other end of the adjusting inductance element is grounded, and when the power of the sampling end is greater than or equal to preset power, the control component is conducted, so that the adjusting inductance element is electrified and is in mutual inductance coupling with the matching inductance element.

When the signal of the sampling end in the matching circuit is greater than or equal to the preset power, the control component is connected with the adjusting inductance element and the matching inductance element, mutual inductance coupling of the adjusting inductance element and the matching inductance element is achieved, and therefore inductance of the matching circuit can be changed by the adjusting inductance element. The inductance of the matching circuit is formed by the matching inductance element and the adjusting inductance element, and can be understood as the sum of the induced inductance and the intrinsic inductance.

In practical application, the control component and the inductance adjusting element can be set according to practical requirements, so that the induced inductance is determined according to the practical requirements. The matching circuit can be matched with different inductance values, when the matching circuit is applied to a power amplifier, the power amplifier can be matched with different inductance values under the condition of amplifying different powers, so that the gain and the phase offset of the power amplifier are the same, and the relation between the input power and the output power of the power amplifier is nearly linear or even linear.

Compared with the fixed inductance in the matching circuit of the related art, the matching circuit of the embodiment of the application is applied to the power amplifier, and can at least partially offset and even completely offset the nonlinearity generated by the power amplifier due to different output power of the power amplifier. Thereby improving the performance of the power amplifier.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person skilled in the art.

For a more complete understanding of the present application and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which like reference numerals represent like parts throughout the following description.

Fig. 1 is a first block diagram of a matching circuit according to an embodiment of the present application

Fig. 2 is a second block diagram of the matching circuit provided in the embodiment of the present application.

Fig. 3 is a third block diagram of the matching circuit provided in the embodiment of the present application.

Fig. 4 is a fourth block diagram of a matching circuit according to an embodiment of the present application.

Fig. 5 is a first circuit diagram of a matching circuit provided in an embodiment of the present application.

Fig. 6 is a second circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 7 is a third circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 8 is a fourth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 9 is a fifth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 10 is a sixth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 11 is a seventh circuit diagram of a matching circuit provided in an embodiment of the present application.

Fig. 12 is an eighth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 13 is a ninth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 14 is a tenth circuit diagram of the matching circuit provided in the embodiment of the present application.

Fig. 15 is a schematic structural diagram of a matching circuit according to an embodiment of the present application.

Fig. 16 is a first block diagram of a power amplifier provided in an embodiment of the present application.

Fig. 17 is a second block diagram of a power amplifier provided in an embodiment of the present application.

Fig. 18 is a third block diagram of a power amplifier according to an embodiment of the present application.

Fig. 19 is a fourth block diagram of a power amplifier according to an embodiment of the present application.

Fig. 20 is a fifth block diagram of a power amplifier according to an embodiment of the present application.

Fig. 21 is a circuit diagram of a power amplifier according to an embodiment of the present application.

Fig. 22 is a schematic layer structure of a rf front-end module according to an embodiment of the present disclosure.

Detailed Description

With the development of technology, the performance requirements of the power amplifier are higher and higher by the communication technology such as 5G application, so how to improve the performance of the power amplifier is an important topic in the communication field. The power amplifier matching circuit is adaptively improved based on the technical development requirement, so that the power amplifier matching circuit is applied to the power amplifier, and the performance of the power amplifier is improved.

The embodiment of the application provides a matching circuit, which can be applied to a power amplifier, wherein the power amplifier can be a GaAs HBT power amplifier, a Si CMOS power amplifier or other types of power amplifiers with matching circuits. The present application does not limit the type of power amplifier. For ease of illustration, a GaAs HBT power amplifier is described below as an example.

The GaAs HBT power amplifier may be a single ended amplifier or a differential amplifier. And a power amplifying circuit and an impedance matching circuit are connected between the input end and the output end of the GaAs HBT power amplifier. The matching circuit of GaAs HBT power amplifiers typically has one or more inductive elements, with different inductive elements being able to have different effects on the impedance value. Generally, the inductance of the inductance element of the GaAs HBT power amplifier is constant, and the power output by the GaAs HBT power amplifier is variable and different output powers, and when the inductance of the inductance element is fixed, the output power of the GaAs HBT power amplifier is different, which causes a problem of non-linearity and a large energy loss.

For example, in the GaAs HBT power amplifier in the related art, a fixed inductance element is adopted, and under the condition of different output powers, the matching degree of the input end and the output end of the GaAs HBT power amplifier is different, so that the problem of nonlinearity is generated.

Based on this, when the matching circuit provided in the embodiment of the present application is applied to a GaAs HBT power amplifier, the matching circuit in the embodiment of the present application can provide different inductance values for impedance matching, and can adaptively change the provided inductance value under the condition that the output power of the GaAs HBT power amplifier changes, so as to compensate for nonlinearity caused by the change of the output power of the GaAs HBT power amplifier, so that the gain and the phase offset of the GaAs HBT power amplifier remain substantially the same even under the condition that the output powers are different, that is, the relationship between the input power and the output power of the GaAs HBT power amplifier is approximately linear or even linear. Compared with the fixed inductance in the matching circuit of the related art, the matching circuit of the embodiment of the application is applied to the GaAs HBT power amplifier, and can at least partially offset and even completely offset nonlinearity generated in the GaAs HBT power amplifier due to different output power of the GaAs HBT power amplifier, so that the performance of the GaAs HBT power amplifier is improved.

It should be noted that when the matching circuit of the embodiment of the present application is applied to other types of power amplifiers, the problem of nonlinearity generated in the power amplifier itself can be solved.

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses, to other embodiments, and all other embodiments, which may be contemplated by those skilled in the art to which the application pertains without inventive faculty, are contemplated as falling within the scope of the application.

Reference herein to "an embodiment" or "an implementation" means that a particular feature, structure, or characteristic described in connection with the embodiment or implementation may be included in at least one embodiment of the present application. The appearances of such phrases in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Those of skill in the art will explicitly and implicitly appreciate that the embodiments described herein may be combined with other embodiments.

Referring to fig. 1, fig. 1 is a first block diagram of a matching circuit provided in an embodiment of the present application, and a matching circuit 100A may include a sampling end 101, a control component 110, an adjusting inductance element 120, and a matching inductance element 130. It should be understood that the portions of the matching circuit 100A shown in fig. 1 are exemplary illustrations of the matching circuit 100A according to the embodiments of the present application, and the matching circuit 100A shown in fig. 1 is not to be construed as limiting the portions of the matching circuit according to the embodiments of the present application.

In an alternative embodiment of the present application, the sampling end 101 may be connected to the control component 110, one end of the control component 110 is connected to the sampling end 101, the other end of the control component 110 is connected to one end of the adjusting inductance element 120, and the other end of the adjusting inductance element 120 is grounded. Illustratively, the control component 110 is capable of effecting conduction to the regulated inductive element 120. For example, when the signal at one end of the control component 110, that is, the signal at the sampling end 101 is greater than or equal to the preset signal, the control component 110 is turned on, so that the adjusting inductance element 120 is energized to generate a magnetic field, so that the adjusting inductance element 120 and the matching inductance element 130 are coupled in a mutual inductance manner. Adjusting the magnetic field generated by inductive element 120 causes matching inductive element 130 to generate an induced inductance, thereby changing the inductance of matching inductive element 130. When the adjusting inductance element 120 is not electrified, the inductance of the matching inductance element 130 is the intrinsic inductance thereof; after the inductance element 120 is energized, the inductance of the matching inductance element 130 is the sum of the induced inductance and the intrinsic inductance. Alternatively, the winding directions of the adjusting inductance element 120 and the matching inductance element 130 may be the same or opposite; the induced inductance can strengthen the intrinsic inductance and weaken the intrinsic inductance. Thus, the sum of the induced inductance and the intrinsic inductance may be greater than the intrinsic inductance or less than the intrinsic inductance.

In practical applications, the control component 110 and the inductance adjusting element 120 can be set according to practical requirements, so as to determine the induced inductance according to the practical requirements. The matching circuit 100A according to the embodiment of the present application can provide different inductance values, and when the matching circuit 100A is applied to a power amplifier, the provided inductance values can be adaptively changed when the output power of the power amplifier changes, so that the gain and the phase offset of the power amplifier remain substantially the same even when the output power of the power amplifier is different, that is, the relationship between the input power and the output power of the power amplifier is approximately linear or even linear. Compared with the fixed inductance in the matching circuit of the related art, the matching circuit 100A of the embodiment of the present application is applied to a power amplifier, and can at least partially cancel or even completely cancel the nonlinearity generated by the power amplifier due to the different output power of the power amplifier. Thereby improving the performance of the power amplifier.

It is understood that the control component 110 is connected to the sampling terminal 101, and the control component 110 and the sampling terminal 101 may be directly connected, so that the signal of the control component 110 may be understood as the signal of the sampling terminal 101. For example, when the signal at the sampling end 101 is greater than or equal to the preset signal, the control component 110 turns on the adjusting inductance element 120, so that the adjusting inductance element 120 and the matching inductance element 130 are coupled in a mutual inductance manner.

The signal at the sampling end 101 can be understood as the power or the voltage at the sampling end 101. Likewise, the signal of the control component 110 may be understood as the power or voltage of the control component 110. Likewise, the preset signal may be understood as a preset power or a preset voltage. When the power of the sampling end 101 is greater than or equal to the preset power, the control component 110 is turned on, so that the adjusting inductance element 120 is electrified and is in mutual inductance coupling with the matching inductance element 130. The preset signal can set a preset value, such as 0.7V, according to the actual requirement, or can set a plurality of preset values according to the actual requirement. The specific value of the preset signal and the number of the preset signals are not limited.

Illustratively, the control component 110 is capable of effecting a turn-off of the regulated inductive element 120. For example, when the signal of the control component 110 or the sampling end 101 is smaller than the preset signal, the control component 110 turns off to power off the adjusting inductance element 120, and the adjusting inductance element 120 is not coupled to the matching inductance element 130. So that adjusting the inductance element 120 does not change the inductance of the matching inductance element 130, when the inductance of the matching inductance element 130 is its own intrinsic inductance.

In practical applications, the intrinsic inductance and the induced inductance may not be equal. The matching circuit 100A is applied to a power amplifier, and can adaptively change the inductance provided under the condition that the output power of the power amplifier is changed, so as to better offset the nonlinearity generated by the power amplifier due to different output powers of the power amplifier. In other alternative embodiments, the intrinsic inductance and the induced inductance may be equal.

In practical applications, the matching circuit 100A may have induced inductances with different values according to practical requirements. The matching circuit 100A is applied to a power amplifier, and can adaptively change the inductance provided under the condition that the output power of the power amplifier is changed, so as to better offset the nonlinearity generated by the power amplifier due to different output powers of the power amplifier.

It should be noted that the sampling terminal 101 may also be connected to the matching inductance element 130.

Referring to fig. 2, a second block diagram of a matching circuit according to an embodiment of the present application is shown, and the matching circuit 100B shown in fig. 2 is different from the matching circuit 100A shown in fig. 1 in that a sampling end 101 of the matching circuit 100B is connected to a matching inductance element 130. Other components and connection relationships of the matching circuit 100B shown in fig. 2 may refer to components and connection relationships of the matching circuit 100A shown in fig. 1, and the embodiments of the present application are not repeated.

Sampling terminal 101 may be an input terminal of matching circuit 100A, and sampling terminal 101 may also be an output terminal of matching circuit 100A. The sampling terminal 101 may also be connected to any node inside the power amplifier when the matching circuit is applied in the power amplifier.

Referring to fig. 2, fig. 2 is a third block diagram of a matching circuit provided in the embodiment of the present application, and the matching circuit 100C shown in fig. 2 is different from the matching circuit 100B shown in fig. 2 in that an input end 102 of the matching circuit 100C is connected to one end of a matching inductance element 130, the other end of the matching inductance element 130 is connected to an output end 103 of the matching circuit 100C, and the input end 102 of the matching circuit 100C is connected to one end of a control component 110. The sampling terminal 101 of the matching circuit 100B shown in fig. 2 may be one of the input terminal 102 and the output terminal 103 of the matching circuit 100C shown in fig. 3. Other components and connection relationships of the matching circuit 100C shown in fig. 3 may refer to components and connection relationships of the matching circuit 100A shown in fig. 1, and the embodiments of the present application are not repeated.

Referring to fig. 4, fig. 4 is a fourth block diagram of a matching circuit provided in the embodiment of the present application, and the matching circuit 100D shown in fig. 4 is different from the matching circuit 100B shown in fig. 2 in that an input end 102 of the matching circuit 100D is connected to one end of a matching inductance element 130, the other end of the matching inductance element 130 is connected to an output end 103 of the matching circuit 100D, and one end of the matching circuit 100D is connected to one end of the control component 110 of the output end 103. The sampling terminal 101 of the matching circuit 100B shown in fig. 2 may be one of the input terminal 102 and the output terminal 103 of the matching circuit 100D shown in fig. 4. The other components and connection relationships of the matching circuit 100D shown in fig. 4 may refer to the components and connection relationships of the matching circuit 100A shown in fig. 1, and the embodiments of the present application are not repeated.

It should be noted that the sampling terminal 101 may also be another connection node in the matching circuit 100A, for example, the matching circuit 100A is applied to a power amplifier, the sampling terminal 101 may be a connection node in the power amplifier, such as the sampling terminal 101 is a connection node connected to a balun of the power amplifier, and further such as the sampling terminal 101 is a connection node connected to two adjacent stages of power amplifying circuits of the power amplifier.

When the sampling terminal 101 is used as the other connection node in the matching circuit 100A, the sampling terminal 101 may be connected to the control component 110, not to the matching inductance element 130.

Referring to fig. 1 to 4, when the sampling terminal 101 is an input terminal of the matching circuit, the control component 110 determines whether to turn on according to the magnitude of the input signal of the matching circuit. When the sampling terminal 101 is the output terminal of the matching circuit, the control component 110 determines whether to conduct according to the magnitude of the output signal of the matching circuit.

When the matching circuit is applied to the power amplifier, the matching circuit can be used for matching the input impedance of the power amplifier, and the signal at the output end of the matching circuit is the input signal of the power amplifier. The matching circuit may also be used for output impedance matching, where the signal at the input of the matching circuit is the output signal of the power amplifier. The matching circuit can also be used for impedance matching between power amplifier stages, wherein the signal of the input end of the matching circuit is the output signal of the previous stage in the adjacent two stages of the power amplifier, and the signal of the output end of the matching circuit is the output signal of the next stage in the adjacent two stages of the power amplifier.

The matching circuit can provide an inductance, i.e., an inductance between the input and output terminals. One or more matching inductive elements 130 are connected between the input and output terminals, and the amount of inductance that the matching circuit can provide includes the amount of inductance of one or more matching inductive elements 130.

The connection relation of each component in the matching circuit defined in the embodiment of the present application can be understood as electrical connection.

In an alternative embodiment of the present application, the control components 110 may be one group or multiple groups. It should be noted that the plural sets defined in the present application may be understood as at least two sets.

In an alternative embodiment of the present application, the inductance adjusting element 120 may be one or more. It should be noted that a plurality of the present application may be understood as at least two.

In an alternative embodiment of the present application, the number of adjusting inductance elements 120 is the same as the number of control components 110, and each control component is correspondingly connected to an adjusting inductance element 120.

In an alternative embodiment of the present application, the matching inductance element 130 may be one or multiple.

The respective components of the matching circuit are described in detail below in conjunction with a circuit diagram of the matching circuit.

Referring to fig. 5, fig. 5 is a first circuit diagram of a matching circuit provided in the embodiment of the present application, and referring to fig. 1 to fig. 4, in the matching circuit, a group of control components 110 is provided, one inductance adjusting element 120 is provided, and one inductance matching element 130 is provided. For example, the control component 110 includes a diode D10, the tuning inductance element 120 includes a tuning inductance element L10, and the matching inductance element 130 includes a matching inductance element L20.

The matching circuit includes a first end 104 and a second end 105, one of the first end 104 and the second end 105 being a sampling end, such as sampling end 101, and the first end 104 being a sampling end of the matching circuit. Illustratively, the first end 104 is an input of the matching circuit and the second end 105 is an output of the matching circuit. In other alternative examples, the first terminal 104 is an output terminal of the matching circuit, and the second terminal 105 is an input terminal of the matching circuit.

The first end 104 is connected to one end of the matching inductance element L20, the other end of the matching inductance element L20 is connected to the second end 105, the first end 104 is connected to the anode of the diode D10, the cathode of the diode D10 is connected to one end of the adjusting inductance element L10, and the other end of the adjusting inductance element L10 is grounded.

When the voltage at the first end 104 is greater than or equal to the conducting voltage of the diode D10, the diode D10 is turned on, so that the adjusting inductance element L10 is electrified, and the matching inductance element L20 and the adjusting inductance element L10 are coupled in a mutual inductance manner.

It will be appreciated that the matching circuit is applied to a power amplifier, such as a GaAs HBT power amplifier, including a diode, and that the diode D10 can be formed simultaneously during the actual processing of the diode of the power amplifier without adding any complicated processing steps. Compared with a related control component or a switch which is formed by adding a complex processing procedure in the related art, the embodiment of the application uses the processing procedure of the power amplifier to form the diode D10, so that the procedures can be reduced, and the cost can be saved. The more actual processing procedures are, the larger the influence on the performance of the power amplifier is, and in contrast, the performance of the power amplifier can be improved.

It should be noted that, the matching circuit is applied to the power amplifier, and the voltage of the first end 104 is related to the power of the power amplifier, so that the inductance element L10 can be adaptively turned on or off according to the power variation of the power amplifier, and no additional control logic is required. Compared with a power amplifier needing additional design control logic, the matching circuit of the embodiment of the application is applied to the power amplifier, and can simplify the processing technology and save the cost.

It is also understood that a power amplifier such as a GaAs HBT power amplifier includes a transistor. The diode D10 of the control assembly 110 shown in fig. 5 may also be replaced by a triode. The following is an exemplary description in connection with other circuit diagrams of the matching circuit.

Referring to fig. 6, fig. 6 is a second circuit diagram of the matching circuit provided in the embodiment of the present application, and the matching circuit shown in fig. 6 is different from the matching circuit shown in fig. 5 in that the control component 110 of the matching circuit shown in fig. 6 includes a transistor T10, a base B and a collector C of the transistor T10 are connected to achieve shorting of the base B and the collector C, and the base B and the collector C are connected to be equivalent to an anode of a diode. The base B is connected to the first terminal 104, and the base B and the collector C are connected to the first terminal 104. The emitter E of the transistor T10 is connected to the tuning inductance element L10.

When the voltage at the first end 104 is greater than or equal to the turn-on voltage of the transistor T10, the transistor T10 is turned on, so that the adjusting inductance element L10 is electrified and is coupled with the matching inductance element L20 in a mutual inductance manner.

It should be noted that, the device for adjusting the power on or off of the inductance element L10 by the control component 110 in the embodiment of the present application is not limited to a diode and a triode, and the control component 110 may also be other devices, which can be used to adjust the power on or off of the inductance element L10, or can be used to switch on or switch off the control component 110 itself, which is not limited by the type of the control component 110 in the embodiment of the present application.

In an alternative embodiment of the present application, the control component 110 is a unidirectional conduction device, and the control component 110 can adjust the inductance element 120 according to the voltage level of the sampling end in a unidirectional conduction manner. It is understood that the control component 110 may be turned on unidirectionally by a diode or unidirectionally by a triode. It is also understood that other devices that can achieve unidirectional conduction are also within the scope of the embodiments of the present application.

Referring to fig. 7, fig. 7 is a third circuit diagram of a matching circuit provided in the embodiment of the present application, and the matching circuit shown in fig. 7 is different from the matching circuit shown in fig. 5 in that the matching circuit shown in fig. 7 has a plurality of control components 110 and a plurality of inductance adjusting elements 120. The embodiment of the present application is described with reference to two control components 110 and two adjusting inductance elements 120. In other embodiments of the present application, the control component 110 is N groups, and the inductance component 120 is N, where N is an integer greater than 2.

Illustratively, the control assembly 110 includes a first control assembly including the first diode D11 and a second control assembly including the second diode D12. In other alternative examples, the first control component includes a transistor and the second control component includes a transistor. In other alternative examples, the first control component includes a diode and the second control component includes a triode. The connection manner of the transistor can refer to fig. 6, and is not described herein.

Illustratively, the regulated inductive 120 includes a first regulated inductive L11 and a second regulated inductive L12. Illustratively, the inductance of the first regulated inductive element L11 and the inductance of the second regulated inductive element L12 are different, such as the inductance of the second regulated inductive element L12 being greater than the inductance of the first regulated inductive element L11. In other examples, the inductance of the first regulated inductance element L11 is the same as the inductance of the second regulated inductance element L12.

Illustratively, one end of the first diode D11 is connected to the first end 104, the other end of the first diode D11 is connected to one end of the first tuning inductance element L11, and the other end of the first tuning inductance element L11 is grounded. One end of the second diode D12 is connected to the first end 104, the other end of the second diode D12 is connected to one end of the second inductance adjusting element L12, and the other end of the second inductance adjusting element L12 is grounded.

At least one of the plurality of tuning inductive elements 120 is mutually inductive with the matching inductive element 130 when the corresponding control component 110 is conductive. It is appreciated that multiple tuning inductive elements 120 can be mutually inductively coupled with the same matching inductive element 130.

When a signal such as the first terminal 104 is greater than or equal to a first preset signal, a first control component such as the first diode D11 is turned on, so that the first regulating inductance element L11 is energized and is coupled with the matching inductance element L20 in a mutual inductance manner. When the signal at the first end 104 is smaller than the first preset signal, the first diode D11 is turned off, so that the first adjusting inductance element L11 is powered off, and the first adjusting inductance element L11 and the matching inductance element L20 are not coupled.

For example, when the signal at the first end 104 is greater than or equal to the second preset signal, the second control component, such as the second diode D12, is turned on, so that the second adjusting inductance element L12 is electrified and is coupled with the matching inductance element L20 in a mutual inductance manner. When the signal at the first end 104 is smaller than the second preset signal, the second diode D12 is turned off, so that the second adjusting inductance element L12 is powered off, and the second adjusting inductance element L12 and the matching inductance element L20 are not coupled.

In an alternative embodiment of the present application, the first preset signal and the second preset signal are different. Such as the second preset signal being greater than the first preset signal. The first preset signal may be a first preset power or a first preset voltage. The second preset signal may be a second preset power or a second preset voltage. In an alternative embodiment, different doping concentrations may be used between the first diode D11 and the second diode D12, so that the first preset signal for turning on the first diode D11 is different from the second preset signal for turning on the second diode D12. It can be understood that the embodiments of the present application do not limit how to implement the first preset signal and the second preset signal, and any different ways of implementing the first preset signal and the second preset signal are within the protection scope of the embodiments of the present application.

Assuming that the second preset signal is greater than the first preset signal, when the signal at the first end 104 is greater than or equal to the first preset signal but less than the second preset signal, the first diode D11 is turned on, the second diode D12 is turned off, and only the first adjusting inductance element L11 of the two adjusting inductance elements is electrified to be coupled with the matching inductance element L20; when the signal at the first end 104 is greater than or equal to the second preset signal, the first diode D11 and the second diode D12 are both turned on, and the first adjusting inductance element L11 and the second adjusting inductance element L12 are both powered on and coupled with the matching inductance element L20. That is, embodiments of the present application may adjust the number of tuning inductive elements coupled with matching inductive element L20 based on the magnitude of the signal at first end 104, thereby providing a variety of different inductances.

In practical applications, since the difference between the turn-on voltages of the different diodes is smaller, the difference between the first preset signal and the second preset signal in fig. 7 is smaller, so that when the signal size of the first end 104 is slightly changed, the number of the adjusting inductance elements coupled with the matching inductance element L20 can be adaptively changed, and the inductance provided by the matching circuit can be further changed. The circuit configuration is very responsive to changes in the signal magnitude at the first end 104.

It should be noted that, when the control component 110 and the adjusting inductance element 120 are plural, the control component 110 and the adjusting inductance element 120 are correspondingly connected, which can be understood that the first preset signal corresponds to the first adjusting inductance element L11, and the second preset signal corresponds to the second adjusting inductance element L12. Therefore, the multiple groups of control components 110 and the multiple adjusting inductance elements 120 in the embodiment of the application can set different values according to actual demands, so that different induced inductances of the matching circuit can be determined according to the actual demands, and the method and the device can be suitable for the demands of various output power changes of the power amplifier. When the matching circuit is applied to a power amplifier, the inductance provided can be adaptively changed in the case of a change in the output power of the power amplifier, and the gain and phase offset remain substantially the same, i.e., the relationship between the input power and the output power of the power amplifier is nearly linear or even linear.

When the number of the control component 110 and the adjusting inductance component 120 is three or more, the specific connection relationship can refer to the first diode D11, the second diode D12, the first adjusting inductance component L11 and the second adjusting inductance component L12 shown in fig. 7, which are not described herein.

It should be noted that, when the number of the control component 110 and the number of the inductance adjusting component 120 are two or more, the connection method is not limited to the connection relationship shown in fig. 7. The following description is made in connection with circuit diagrams of other matching circuits.

Referring to fig. 8, fig. 8 is a fourth circuit diagram of a matching circuit according to an embodiment of the present application, and the matching circuit shown in fig. 8 is different from the matching circuit shown in fig. 7 in that one end of the second diode D12 of the control component 110 is connected to the other end of the first diode D11 in the matching circuit shown in fig. 8. It is understood that the first diode D11 and the second diode D12 in the matching circuit shown in fig. 7 are connected to the first terminal 104, and the second diode D12, the first diode D11 and the first terminal 104 in the matching circuit shown in fig. 8 are sequentially connected. Thus, in the matching circuit shown in fig. 8, the second diode D12 is turned on only when the first diode D11 is turned on and the voltage at the cathode of the first diode D11 is greater than the turn-on voltage of the second diode D12. In practical applications, since the turn-on voltage of a single diode is larger than the difference between turn-on voltages of different diodes, the difference between the second preset signal and the first preset signal in fig. 8 is larger than that in fig. 7, so that when the signal at the first end 104 changes significantly, the number of the adjusting inductance elements coupled with the matching inductance element L20 can be adaptively changed, and the inductance provided by the matching circuit can be further changed. The circuit configuration is capable of responding to a wide range of changes in the signal magnitude at the first end 104.

The other components and connection relationships of the matching circuit shown in fig. 8 may refer to the components and connection relationships of the matching circuit shown in fig. 7, and the embodiments of the present application will not be repeated. It should be noted that, when the number of the control component 110 and the adjusting inductance component 120 shown in fig. 8 is three or more, the specific connection relationship may refer to the first diode D11, the second diode D12, the first adjusting inductance component L11 and the second adjusting inductance component L12 shown in fig. 8, which are not described herein.

The inductance of the first inductance element L11 and the inductance of the second inductance element L12 shown in fig. 8 may be the same or different.

In an alternative embodiment of the present application, the two circuit structures of fig. 7 and 8 may be combined, so that the matching circuit can still respond to the change of the signal magnitude of the first end 104 relatively sensitively in a wider range, and adjust the inductance provided.

Referring to fig. 9, fig. 9 is a fifth circuit diagram of a matching circuit according to an embodiment of the present application, and the matching circuit shown in fig. 9 is different from the matching circuit shown in fig. 5 in that a plurality of matching inductance elements 130 of the matching circuit shown in fig. 9 are connected to each other. The embodiment of the present application will be described with reference to two matching inductance elements 130. In other embodiments of the present application, the number of matching inductance elements 130 is N, where N is an integer greater than 2, and the plurality of matching inductance elements 130 are connected to each other.

Illustratively, the matching inductive element 130 includes a first matching inductive element L21 and a third matching inductive element L23. Illustratively, one end of the first matching inductance element L21 is connected to the first end 104, the other end of the first matching inductance element L21 is connected to one end of the third matching inductance element L23, and the other end of the third matching inductance element L23 is connected to the second end 105.

One tuning inductive element 120 is in mutual inductance coupling with a plurality of matching inductive elements 130, and when the control assembly 110 is turned on, the tuning inductive element 120 energizes and creates mutual inductance with the plurality of matching inductive elements 130.

Illustratively, the first matching inductance element L21 and the third matching inductance element L23 are each capable of being inductively coupled with a tuning inductance element 120, such as the tuning inductance element L10, and when the signal at the first end 104 is greater than or equal to the predetermined signal, the control component 110, such as the diode D10, is turned on to energize the tuning inductance element L10 and to be inductively coupled with the first matching inductance element L21 and the third matching inductance element L23. When the signal at the first end 104 is smaller than the preset signal, the control component 110, such as the diode D12, turns off the adjusting inductance element L10, so that the adjusting inductance element L10 is not coupled with the first matching inductance element L21 and the third matching inductance element L23.

Note that, when there are two matching inductance elements 130, the connection relationship between the two matching inductance elements 130 is not limited to this. The following is described in connection with other circuit diagrams of the matching circuit.

Referring to fig. 10, fig. 10 is a sixth circuit diagram of a matching circuit provided in the embodiment of the present application, and the matching circuit shown in fig. 10 is different from the matching circuit shown in fig. 9 in that, in the matching circuit shown in fig. 10, one end of a first matching inductance element L21 of a matching inductance element 130 is connected to a first end 104, the other end of the first matching inductance element L21 is connected to a second end 105, one end of a third matching inductance element L23 is connected to the second end 105, and the other end of the third matching inductance element L23 is grounded. It should be noted that, in the matching circuit shown in fig. 10, the coupling relationship between the adjusting inductance element L10 and the first matching inductance element L21 and the third matching inductance element L23 may refer to the related description of the matching circuit shown in fig. 9, and will not be described herein.

Referring to fig. 11, fig. 11 is a seventh circuit diagram of a matching circuit provided in the embodiment of the present application, and the matching circuit shown in fig. 11 is different from the matching circuit shown in fig. 9 in that the matching inductance element 130 in the matching circuit shown in fig. 11 further includes a second matching inductance element L22, one end of the second matching inductance element L22 is connected between the other end of the first matching inductance element L21 and one end of the third matching inductance element L23, and the second matching inductance element L22 is grounded.

Illustratively, the first matching inductance element L21, the second matching inductance element L22, and the third matching inductance element L23 are each capable of being inductively coupled with a tuning inductance element 120, such as the tuning inductance element L10, and when the signal at the first end 104 is greater than or equal to the preset signal, the control component 110, such as the diode D10, is turned on to energize the tuning inductance element L10 and is inductively coupled with the first matching inductance element L21, the second matching inductance element L22, and the third matching inductance element L23. When the signal at the first end 104 is smaller than the preset signal, the control component 110, such as the diode D12, turns off the adjusting inductance element L10, so that the adjusting inductance element L10 is not coupled with the first matching inductance element L21, the second matching inductance element L22, and the third matching inductance element L23.

It should be noted that, the number of matching inductance elements in the matching circuit and the connection relationship of the matching inductance elements are set according to the actual requirement of the power amplifier when the matching circuit is applied to the power amplifier, and the above is a few exemplary descriptions of the matching inductance elements in the matching circuit in the embodiment of the present application, which do not limit the number of matching inductance elements and the connection relationship of the embodiment of the present application.

It should be noted that the matching circuit may further include other elements, such as a capacitive element. For example, the matching circuit further includes a first capacitor, one end of the first capacitor is connected to one end of the matching inductance element, and the other end of the first capacitor is grounded or connected to one end of the adjusting inductance element. The following is described in connection with other circuit diagrams of the matching circuit.

Referring to fig. 12, fig. 12 is an eighth circuit diagram of a matching circuit provided in the embodiment of the present application, where the matching circuit shown in fig. 12 is different from the matching circuit shown in fig. 11 in that the matching circuit shown in fig. 12 may further include one or more capacitance elements, and in the matching circuit of the embodiment of the present application, the capacitance element further includes a first capacitance C10, for example, the matching circuit further includes a first capacitance C10, one end of the first capacitance C10 is connected to one end of a first matching inductance element L21 in the matching inductance element 130, and the other end of the first capacitance C10 is connected to one end of an adjusting inductance element 120, such as the adjusting inductance element L10.

In an alternative embodiment of the present application, the first capacitor C10 is connected in parallel with the diode D10 of a control component 110. The first capacitor C10 may not only participate in impedance matching, but may also be multiplexed by the control component 110. For example, by connecting the first capacitor C10 in parallel with the diode D10, the voltage swing across the diode D10 can be changed, and the power point at which the diode D10 is turned on can be adjusted. Therefore, compared with the related art, the embodiment of the invention additionally designs the logic circuit to realize the conduction of the control component 110, so that the processing technology and the processing cost can be further saved.

In another alternative embodiment of the present application, the first capacitor C10 may not be connected in parallel with the diode D10 of the control component 110. For example, one end of the first capacitor C10 is connected to one end of the first matching inductance element L21, and the other end of the first capacitor C10 is grounded. At this time, the first capacitor C10 may provide a capacitance value, and participate in impedance matching of the power amplifier together with the first, second and third matching inductance elements L21, L22 and L23.

It should be noted that a control component 110 may also include a capacitive element. The following is described in connection with other circuit diagrams of the matching circuit.

Referring to fig. 13, fig. 13 is a ninth circuit diagram of a matching circuit according to an embodiment of the present application, and the matching circuit shown in fig. 13 is different from the matching circuit shown in fig. 5 in that the control component 110 of the matching circuit shown in fig. 13 may further include a capacitive element, such as the control component 110 includes a second capacitor C20, and the second capacitor C20 is connected in parallel with the diode D10 of the control component 110. The second capacitor C20 can change the voltage swing across the diode D10, and adjust the power point at which the diode D10 is turned on.

It is understood that when the control assembly 110 includes a transistor, the second capacitor C20 is connected in parallel with the transistor. Referring to fig. 14, fig. 14 is a tenth circuit diagram of a matching circuit according to an embodiment of the present application, and the matching circuit shown in fig. 14 is different from the matching circuit shown in fig. 6 in that, in the matching circuit shown in fig. 14, the control component 110 further includes a capacitive element, such as the control component 110 further includes a second capacitor C20, and the second capacitor C20 is connected in parallel with the transistor T10 of the control component 110. The second capacitor C20 can change the voltage swing at two ends of the transistor T10, and adjust the power point at which the transistor T10 is turned on.

It should be noted that any diode of any matching circuit in fig. 7 to 12 may be replaced by a triode shown in fig. 6, and will not be described herein.

In practical applications, the matching circuit is applied to a power amplifier, such as a GaAs HBT power amplifier, and the inductance of the matching circuit needs to be set according to the actual requirement of the power amplifier, so as to further offset the nonlinearity generated in the power amplifier due to different output powers of the power amplifier. The positional relationship of the adjusting inductance element and the matching inductance element can also be adjusted.

In the first case, at least one matching inductive element 130 is wound around the adjusting inductive element 120. It will be appreciated that when the control component 110 turns on the tuning inductive element 120, the tuning inductive element 120 has a current passing through it, and the tuning inductive element 120 and the matching inductive element 130 generate mutual inductance, which can change the inductance of the matching circuit within a certain range. Or the inductance of the induced inductance of the matching circuit varies only a limited amount from the inductance of the intrinsic inductance of the matching circuit.

In the second case, the at least one matching inductance element 130 and the adjustment inductance element 120 are located in different planes, and the projection portions of the at least one matching inductance element 130 and the adjustment inductance element 120 on the first plane overlap. When the control component 110 turns on the adjusting inductance element 120, the adjusting inductance element 120 has current passing through, the adjusting inductance element 120 and the matching inductance element 130 generate mutual inductance, and the inductance of the matching circuit can be changed in a larger range. Or the inductance of the induced inductance of the matching circuit varies significantly from the inductance of the intrinsic inductance of the matching circuit.

Wherein the first plane is substantially parallel to the plane in which the tuning inductive element 120 is located. It will be appreciated that in actual machining, there is a machining error, and that the first plane being substantially parallel to the plane in which the inductance element 120 is adjusted includes a machining error in the plane in which the inductance element 120 is adjusted.

In the third case, the at least one matching inductance element 130 and the tuning inductance element 120 are located in different planes, and the projections of the at least one matching inductance element 130 and the tuning inductance element 120 on the first plane are completely overlapped. When the control component 110 turns on the adjusting inductance element 120, the adjusting inductance element 120 has current passing through, the adjusting inductance element 120 and the matching inductance element 130 generate mutual inductance, and the inductance of the matching circuit can be changed within a larger range. Or the inductance of the induced inductance of the matching circuit varies more than the inductance of the intrinsic inductance of the matching circuit.

Therefore, the control component 110 turns on or off the adjusting inductance element 120 in the embodiment of the present application can improve the nonlinearity generated by the power amplifier in the power amplifier due to different output powers to a certain extent. The embodiment of the application can also better and even completely offset the nonlinearity generated by the power amplifier inside due to the difference of the output power of the power amplifier through the position relation of the matching inductance element 130 and the adjusting inductance element 120.

It should be noted that, in order to better offset the nonlinearity generated in the power amplifier due to the difference in output power of the power amplifier, the coil number of the inductance element 120 may be adjusted.

An exemplary description is given below with reference to a specific structural diagram of the matching circuit.

Referring to fig. 15, fig. 15 is a schematic structural diagram of a matching circuit according to an embodiment of the present application, and fig. 12 is combined. The first matching inductance element L21 and the adjusting inductance element 120 are located on the same plane as the adjusting inductance element L10, and the first matching inductance element L21 is wound around the adjusting inductance element L10. The second matching inductance element L22 and the third matching inductance element L23 are located in different planes from the adjustment inductance element L10 and at least partially overlap with projections of the adjustment inductance element L10 and the first matching inductance element L21 on the first plane.

It should be noted that each of the above circuit diagrams may be any of the matching circuits in fig. 1 to 4.

The following description will take an example in which the matching circuit is applied to a power amplifier. The matching circuit in any of the above embodiments is applied to a power amplifier, i.e. the power amplifier comprises the matching circuit. The power amplifier may be a GaAs HBT power amplifier, or may be another type of power amplifier, which embodiments of the present application are not limited.

It is understood that, since the power amplifier according to the embodiment of the present application includes the matching circuit in any of the above embodiments, the beneficial effects of the matching circuit in any of the above embodiments can be exhibited in the power amplifier. Or the power amplifier has the beneficial effects of the matching circuit in any of the embodiments.

The power amplifier may also include other devices, such as the power amplifier may also include at least one power amplifying circuit. The power amplifier further comprises at least one balun, for example. The following is an illustration in connection with a block diagram and a circuit diagram of a power amplifier.

Referring to fig. 16, fig. 16 is a first block diagram of a power amplifier according to an embodiment of the present application. The power amplifier 10A may include a matching circuit 100 and a power amplifying circuit 200, and the matching circuit 100 and the power amplifying circuit 200 are connected. Illustratively, the matching circuit 100 is disposed at an input of the power amplifying circuit 200. Illustratively, the matching circuit 100 is disposed at the output of the power amplifying circuit 200. The matching circuit 100 may be any of the matching circuits described in any of the above embodiments, and will not be described herein.

Under the condition that the output power of the power amplifier is changed, the inductance provided by the power amplifier can be adaptively changed, so that nonlinearity caused by the change of the output power of the power amplifier is compensated, the gain and the phase offset of the power amplifier are kept basically the same even under the condition that the output power is different, and the relation between the input power and the output power of the power amplifier is approximately linear or even linear. Compared with the fixed inductance in the power amplifier of the related art, the power amplifier of the embodiment of the application can at least partially offset and even completely offset the nonlinearity generated by the power amplifier inside due to different output powers of the power amplifier. Thereby improving the performance of the power amplifier.

It should be noted that the power amplifier may include a plurality of power amplifying circuits, and the plurality of power amplifying circuits are connected to form a multi-stage power amplifying circuit. When the power amplifier includes two, three, four or other power amplifying circuits, the matching circuit may be disposed at an input end of a first stage of the power amplifying circuits in the multi-stage power amplifying circuits, or the matching circuit may be disposed at an output end of a last stage of the power amplifying circuits in the multi-stage power amplifying circuits, or the matching circuit may be disposed between any adjacent two stages of the power amplifying circuits in the multi-stage power amplifying circuits. The power amplifier having a two-stage power amplifier circuit is illustrated in connection with other schematic diagrams of the power amplifier.

Referring to fig. 17, fig. 17 is a second block diagram of a power amplifier according to an embodiment of the present application. The power amplifier 10B may include a matching circuit 100, a first stage power amplifying circuit 210, and a second stage power amplifying circuit 220. The first stage power amplifying circuit 210 is connected to the second stage power amplifying circuit 220, and specifically, an output terminal of the first stage power amplifying circuit 210 is connected to an input terminal of the second stage power amplifying circuit 220. Illustratively, the matching circuit 100 is disposed at an input end of the first stage power amplifying circuit 210, and is configured to match an input impedance of the first stage power amplifying circuit 210. The matching circuit 100 may include any one of the matching circuits shown in fig. 1 to 15.

As an embodiment, the matching circuit 100 may further include an input impedance transformer, where the input impedance transformer is configured with a primary stage for receiving the rf input signal sent by the pre-stage circuit, and a secondary stage connected to the input terminal of the first stage power amplifying circuit 210. When the rf input signal is a single-ended signal and the first stage power amplifying circuit 210 is of a differential structure, the input impedance transformer is further configured to implement unbalanced-balanced conversion between the pre-stage circuit and the first stage power amplifying circuit 210, and can convert the unbalanced rf input signal into a balanced rf signal and send the balanced rf signal to the first stage power amplifying circuit 210.

Alternatively, when the matching circuit 100 further includes an input balun, the matching inductance element 130 may be a primary coil or a secondary coil of the input balun, or may be another matching inductance element other than the input balun.

It should be noted that the matching circuit 100 may be disposed at other portions of the power amplifier, and is described below with reference to schematic diagrams of other power amplifiers.

Referring to fig. 18, fig. 18 is a third block diagram of a power amplifier according to an embodiment of the present application. The power amplifier 10C shown in fig. 18 differs from the power amplifier 18B shown in fig. 17 in that: the matching circuit 100 is disposed between the first stage power amplifying circuit 210 and the second stage power amplifying circuit 220, that is, the matching circuit 100 is disposed between the output terminal of the first stage power amplifying circuit 210 and the input terminal of the second stage power amplifying circuit 220.

Referring to fig. 19, fig. 19 is a fourth block diagram of a power amplifier according to an embodiment of the present application. The power amplifier 10D shown in fig. 19 differs from the power amplifier 18B shown in fig. 17 in that: the matching circuit 100 is disposed at an output terminal of the second stage power amplifying circuit 220.

In practical applications, the matching circuit 100 may be disposed at a predetermined position of the power amplifier according to practical requirements.

Referring to fig. 20, fig. 20 is a fifth block diagram of a power amplifier according to an embodiment of the present application. The power amplifier 10E shown in fig. 20 may include a matching circuit 100 and a balun 300. Illustratively, the primary coil and/or the secondary coil of the balun 300 are matching inductance elements in the matching circuit 100, that is, the inductance of the primary coil and/or the secondary coil of the balun 300 in the embodiment of the present application may also be adaptively adjusted according to the power level of the sampling end. Alternatively, the sampling end may be an input end or an output end of the power amplifier, or a connection point of two adjacent stages of power amplifying circuits in the power amplifier, or other nodes of the power amplifier. In the case of a change in the output power of the power amplifier, the matching circuit 100 is capable of adaptively changing the inductance provided to compensate for the nonlinearity caused by the change in the output power of the power amplifier, so that the gain and phase offset of the power amplifier remain substantially the same even when the output power is different, i.e., so that the relationship between the input power and the output power of the power amplifier is nearly linear or even linear. Compared with the fixed inductance in the power amplifier of the related art, the power amplifier of the embodiment of the application can at least partially offset and even completely offset the nonlinearity generated by the power amplifier inside due to different output powers of the power amplifier. Thereby improving the performance of the power amplifier.

For example, the balun 300 includes a first coil 301 and a second coil 302, the sampling end is one end of the first coil 301 or a node on the first coil 301, one end of the control component 110 is connected to the first coil 301, the other end of the control component 110 is connected to one end of the adjusting inductance element 120, and the other end of the adjusting inductance element 120 is grounded. The regulating inductive element 120 is coupled to either the first coil 301 or the second coil 302 when a current is passed. The control component 110 can be turned on or off to change the coupling relationship between the tuning inductive element 120 and the first coil 301 or the second coil 302, and can achieve tuning of the inductance of the first coil 301 or the second coil 302 such that the relationship between the input power and the output power of the power amplifier is nearly linear or even linear.

It should be noted that, the matching circuit 100 may further include one or more matching inductance elements different from the first coil 301, which will not be described herein.

It should be understood that the matching circuit 100 may be any of the matching circuits described in the above embodiments, and will not be described herein.

Illustratively, the first coil 301 may be a primary coil of the balun 300 and the second coil 302 may be a secondary coil of the balun 300. Illustratively, the first coil 301 may be a secondary coil of the balun 300 and the second coil 302 may be a primary coil of the balun 300.

When the power amplifier includes a plurality of balun elements, the primary winding and/or the secondary winding of at least one balun element is a matching inductance element. In an alternative embodiment of the present application, at least one balun may be understood as part of the matching circuit 100.

Referring to fig. 21, fig. 21 is a circuit diagram of a power amplifier according to an embodiment of the present application. The power amplifier shown in fig. 21 may include an input port 11, an output port 12, a first stage power amplifying circuit 210, a matching circuit 100, a first balun 310, a second stage power amplifying circuit 220, and a second balun 320.

Optionally, one or more transistors, such as HBT or MOS transistors, are included in the first stage power amplification circuit 210, the second stage power amplification circuit 220, respectively. Fig. 21 illustrates an HBT tube as an example.

An input end of the first stage power amplifying circuit 210 is connected to the input port 11, an output end of the first stage power amplifying circuit 210 is connected to an input end of the matching circuit 100, an output end of the matching circuit 100 is connected to one end of the primary winding S31 of the first balun 310, and the other end of the primary winding S31 is grounded. Specifically, the base of the HBT tube T21 of the first stage power amplification circuit 210 is connected to the input port 11, the collector of the HBT tube T21 is connected to a control component of the matching circuit 100, such as the diode D10, and the collector of the HBT tube T21 is connected to one end of the matching inductance element L20 of the matching circuit 100, the other end of the diode D10 is connected to one end of the adjusting inductance element L10 of the matching circuit 100, and the other end of the adjusting inductance element L10 is grounded. The emitter of HBT tube T21 is grounded.

The secondary winding S32 of the first balun 310 is connected to the second-stage power amplifying circuit 220, specifically, one end of the secondary winding S32 is connected to the base of the HBT tube T22 of the second-stage power amplifying circuit 220, and the other end of the secondary winding S32 is connected to the base of the HBT tube T23 of the second-stage power amplifying circuit 220. The collector of HBT tube T22 is connected to second balun 320, the emitter of HBT tube T22 is grounded, the collector of HBT tube T23 is connected to second balun 320, and the emitter of HBT tube T23 is grounded. Specifically, the collector of HBT tube T22 is connected to one end of primary winding S33 of second balun 320, and the collector of HBT tube T23 is connected to the other end of primary winding S33 of second balun 320. One end of the secondary coil S34 of the second balun 320 is connected to the output port 12, and the other end of the secondary coil S34 is grounded.

When the signal, such as the power, at the output end of the first stage power amplifying circuit 210 is greater than or equal to the preset signal, that is, when the signal, such as the power, at the input end of the matching circuit 100 is greater than or equal to the preset signal, the control component, such as the diode D10, is enabled to be turned on, and the inductance element L10 is adjusted to be electrified and coupled with the matching inductance element L20 in a mutual inductance manner.

And when the signal, such as the power, at the output end of the first stage power amplifying circuit 210 is smaller than the preset signal, that is, when the signal, such as the power, at the input end of the matching circuit 100 is smaller than the preset signal, the control component, such as the diode D10, can be turned off, so that the adjusting inductance element L10 is powered off, and the adjusting inductance element L10 is not coupled with the matching inductance element L20. At this time, the matching inductance element L20 has a current, and the adjusting inductance element L10 has no current.

Under the condition that the output power of the power amplifier changes, the inductance provided can be adaptively changed, so that nonlinearity caused by the change of the output power of the GaAs HBT power amplifier is compensated, and the relation between the input power and the output power of the power amplifier is nearly linear or even linear.

Note that the matching circuit shown in fig. 21 is an example of the matching circuit. Any of the above matching circuits such as any of the matching circuits of fig. 6 to 15 may be substituted for the matching circuit shown in fig. 21. It is further understood that fig. 1 to 4 and the related content are applicable to the matching circuit shown in fig. 21, and are not described herein.

In the power amplifier shown in fig. 21, the sampling terminal of the matching circuit 100 can be understood as the input terminal of the matching circuit 100. It should be noted that, the sampling end of the matching circuit 100 may be connected to other positions of the power amplifier, for example, the sampling end of the matching circuit 100 is connected to the input port 11, for example, the sampling end of the matching circuit 100 is connected between the first balun 310 and the second-stage power amplifying circuit 220, for example, the sampling end of the matching circuit 100 is connected between the second balun 320 and the second-stage power amplifying circuit 220, for example, the sampling end of the matching circuit 100 is connected to the output port 12. The connection position of the sampling end of the matching circuit 100 is not limited in the embodiment of the present application.

In an alternative embodiment, the primary winding S31 and/or the secondary winding S32 of at least one balun, such as the first balun 310, may be understood as matching inductive elements in the matching circuit 100. For example, when a control component such as diode D10 turns on the tuning inductive element L10, the tuning inductive element L10 is inductively coupled with the matching inductive element L20. At the same time, the inductance element L10 is adjusted to be inductively coupled with the primary winding S31 and/or the secondary winding S32.

In an alternative embodiment of the present application, the power amplifier is a GaAs HBT power amplifier.

The power amplifier of any of the above embodiments can be applied to a chip or the power amplifier can be integrated in a chip. Such as GaAs HBT power amplifiers, are integrated within a GaAs HBT chip. The power amplifier of any of the embodiments described above has the beneficial effect that it can be presented in the chip. Or the chip has the beneficial effects of the power amplifier in any of the embodiments described above.

The power amplifier of any of the above embodiments can be applied to a radio frequency front end module, or the radio frequency front end module includes the power amplifier of any of the above embodiments. The power amplifier in any of the embodiments has the beneficial effects that the power amplifier can be presented in the radio frequency front end module. Or the radio frequency front end module has the beneficial effects of the power amplifier in any embodiment. The rf front-end module is described in exemplary detail below in connection with a layer structure of the rf front-end module.

Referring to fig. 22, fig. 22 is a schematic layer structure of a radio frequency front end module according to an embodiment of the present application. The rf front-end module 1 may include a substrate 30, a chip 20, and a power amplifier 10, the chip 20 is disposed on the substrate 30, at least a portion of devices of the power amplifier 10 are integrated within the chip 20, such as a power amplification circuit of the power amplifier 10 is integrated within the chip 20. The power amplifier 10 may be any of the power amplifiers described in the above embodiments, and will not be described herein.

The substrate 30 includes a plurality of metal layers, such as two metal layers disposed in a stacked manner, and three metal layers disposed in a stacked manner, and the number of metal layers of the substrate 30 is not limited in this embodiment. The substrate 30 may be, for example, a printed circuit board (Printed Circuit Board, PCB).

Illustratively, the tuning inductive element and the at least one matching inductive element are disposed on a same metal layer of the substrate.

Illustratively, the tuning inductive element and the at least one matching inductive element are disposed on different metal layers of the substrate 30, and the at least one matching inductive element disposed on different metal layers of the substrate 30 and the projected portion of the tuning inductive element on one of the metal layers of the substrate 30 overlap.

Illustratively, the tuning inductive element and the at least one matching inductive element are disposed on different metal layers of the substrate 30, and the at least one matching inductive element disposed on different metal layers of the substrate 30 and the projection of the tuning inductive element on one of the metal layers of the substrate 30 completely overlap.

Illustratively, the matching circuit of the power amplifier 10 is integrated within the chip 20. Wherein the matching circuit is any of the matching circuits described above.

Wherein the first plane defined by the above embodiments may be understood as a plane substantially parallel to the substrate 30.

Illustratively, the power amplifier 10 may further include at least one balun, the at least one balun being integrated within the chip 20. The balun refers to fig. 20 and 21, and is not described herein.

It will be appreciated that the rf front-end module 1 may also comprise other devices, such as that the rf front-end module 1 comprises an rf switch, a noise amplifier, a filter, etc. The embodiment of the application does not limit the devices contained in the radio frequency front end module and the connection relation of the devices.

It should be noted that the radio frequency front end module with the power amplifier can be applied to electronic equipment. Electronic devices include, but are not limited to: any electronic device or component having a PCB board assembly, such as an LED panel, a tablet computer, a notebook computer, a navigator, a mobile phone, and an electronic watch, is not particularly limited in this embodiment of the present application.

It will be appreciated that the electronic device may also include electronic devices such as personal digital assistants (Personal Digital Assistant, PDAs) and/or music player functions, such as cell phones, tablet computers, wearable electronic devices with wireless communication functions (e.g., smart watches), and the like. The electronic device may also be other electronic means, such as a Laptop computer (Laptop) or the like having a touch sensitive surface, e.g. a touch panel. In some embodiments, the electronic device may have a communication function, that is, may establish communication with the network through a communication mode that may occur in 2G (second generation mobile phone communication specification), 3G (third generation mobile phone communication specification), 4G (fourth generation mobile phone communication specification), 5G (fifth generation mobile phone communication specification), 6G (sixth generation mobile phone communication specification), or W-LAN (wireless local area network) or in future. For the sake of brevity, this embodiment is not further limited.

The matching circuit, the power amplifier and the radio frequency front end module provided by the embodiment of the application are described in detail, and specific examples are applied to the description of the principle and implementation of the application, and the description of the above embodiments is only used for helping to understand the method and core idea of the application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.

Claims

1. A matching circuit, comprising:

a sampling end;

matching the inductive element;

adjusting the inductive element; and

2. The matching circuit of claim 1, wherein said control assembly has at least one group, said tuning inductive elements have at least one, said number of control assemblies is the same as said number of tuning inductive elements, and each of said control assemblies is correspondingly connected to one of said tuning inductive elements.

3. The matching circuit of claim 2, wherein said control assembly comprises a first control assembly and a second control assembly, said tuning inductive element comprising a first tuning inductive element and a second tuning inductive element;

4. The matching circuit of claim 2, wherein said control assembly comprises a first control assembly and a second control assembly, said tuning inductive element comprising a first tuning inductive element and a second tuning inductive element;

5. The matching circuit of claim 2, wherein said tuning inductive element has one, said matching inductive element has a plurality, a plurality of said matching inductive elements are interconnected, and a plurality of said matching inductive elements are mutually inductively coupled with the same tuning inductive element.

6. The matching circuit of claim 5, wherein at least one of said matching inductive elements is wound around said tuning inductive element; and/or

7. The matching circuit of claim 6, wherein said matching inductive element comprises a first matching inductive element, a second matching inductive element, and a third matching inductive element;

one end of the first matching inductance element is connected with the input end of the matching circuit, one end of the second matching inductance element is connected between the other end of the first matching inductance element and one end of the third matching inductance element, the other end of the second matching inductance element is grounded, and the other end of the third matching inductance element is connected with the output end of the matching circuit.

8. The matching circuit of claim 7, wherein said first matching inductive element and said tuning inductive element are in the same plane and said first matching inductive element is wound around said tuning inductive element;

The second matching inductance element and the third matching inductance element are located in different planes than the tuning inductance element and at least partially overlap with projections of the tuning inductance element and the first matching inductance element on the first plane.

9. The matching circuit of claim 2, wherein said tuning inductive element has a plurality of said matching inductive elements, said matching inductive element having one;

10. The matching circuit according to any one of claims 1 to 6 or 9, wherein the sampling terminal is an input terminal or an output terminal of the matching circuit;

the control component is connected with the input end or the output end.

11. The matching circuit of any one of claims 1 to 9, wherein the control component is a unidirectional conduction device, and the control component is capable of unidirectional conduction of the tuning inductive element according to a preset signal magnitude of the sampling terminal.

12. The matching circuit of claim 11, wherein said control assembly comprises a diode, an anode of said diode being connected to said matching inductive element, a cathode of said diode being connected to one end of said tuning inductive element; or alternatively

13. The matching circuit of claim 12, further comprising a first capacitor having one end connected to one end of the matching inductive element and the other end connected to ground or one end of the tuning inductive element.

14. The matching circuit of claim 13, wherein said first capacitor is connected in parallel with said diode or transistor.

15. The matching circuit of claim 13, wherein said control component further comprises a second capacitor, said second capacitor being in parallel with said diode or transistor.

16. The matching circuit of claim 3 or 4, wherein the first control component turns on the first tuning inductive element and the matching inductive element when the power of the sampling end is greater than or equal to a first preset power, the first tuning inductive element and the matching inductive element being coupled in mutual inductance;

wherein the first preset power and the second preset power are different.

17. A power amplifier, comprising:

at least one power amplifying circuit; and

a matching circuit as claimed in any one of claims 1 to 16, said matching circuit being connected to at least one of said power amplifying circuits.

18. The power amplifier of claim 17, wherein the power amplifier comprises a plurality of the power amplifying circuits, the plurality of the power amplifying circuits being connected to form a multi-stage power amplifying circuit;

19. The power amplifier of claim 17, further comprising at least one balun, a primary and/or a secondary of at least one of the balun being the matching inductive element.

20. The power amplifier of claim 17, wherein the power amplifier is integrated within a GaAs HBT chip.

21. A radio frequency front end module, comprising:

a substrate; and

the chip is arranged on the substrate;

a power amplifier as claimed in any one of claims 17 to 20, the power amplifying circuit in the power amplifier being integrated within the chip.

22. The rf front end module of claim 21, wherein the substrate comprises a plurality of metal layers;

23. The radio frequency front end module of claim 21, wherein the matching circuit is integrated within the chip, the chip comprising a plurality of metal layers;

24. The utility model provides a matching circuit, is applied to GaAs HBT power amplifier, its characterized in that, matching circuit includes matching inductance element, adjusts inductance element and control assembly, control assembly's one end with matching circuit's sampling end is connected, control assembly's the other end with adjust inductance element's one end is connected, adjust inductance element's the other end ground connection, when the power of sampling end is greater than or equal to preset power, control assembly switches on, makes adjust inductance element the circular telegram and with matching inductance element mutual inductance coupling.