CN117492331A - Overlay error measurement method and system based on X-ray incidence angle optimization - Google Patents
Overlay error measurement method and system based on X-ray incidence angle optimization Download PDFInfo
- Publication number
- CN117492331A CN117492331A CN202311417295.8A CN202311417295A CN117492331A CN 117492331 A CN117492331 A CN 117492331A CN 202311417295 A CN202311417295 A CN 202311417295A CN 117492331 A CN117492331 A CN 117492331A
- Authority
- CN
- China
- Prior art keywords
- overlay
- overlay error
- incidence angle
- scattering intensity
- measurement method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005457 optimization Methods 0.000 title claims abstract description 26
- 238000000691 measurement method Methods 0.000 title claims abstract description 25
- 238000005259 measurement Methods 0.000 claims abstract description 21
- 238000013507 mapping Methods 0.000 claims abstract description 19
- 239000002086 nanomaterial Substances 0.000 claims abstract description 19
- 238000000333 X-ray scattering Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 43
- 238000000605 extraction Methods 0.000 claims description 9
- 238000004088 simulation Methods 0.000 claims description 8
- QYSXJUFSXHHAJI-YRZJJWOYSA-N vitamin D3 Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C\C=C1\C[C@@H](O)CCC1=C QYSXJUFSXHHAJI-YRZJJWOYSA-N 0.000 claims description 6
- 238000004590 computer program Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000012821 model calculation Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012634 optical imaging Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000235 small-angle X-ray scattering Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70541—Tagging, i.e. hardware or software tagging of features or components, e.g. using tagging scripts or tagging identifier codes for identification of chips, shots or wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention belongs to the field of overlay error measurement, and particularly discloses an overlay error measurement method and system based on X-ray incidence angle optimization, wherein the method comprises the following steps: determining the relation between the overlay error and the scattering intensity of the overlay structure based on X-ray scattering field modeling; further obtaining the approximate linear relation between the relative difference of the scattering intensity of the overlay structure and the ideal double-layer nano structure and the overlay error; based on a pair of alignment structures with positive and negative offset, determining an approximate mapping model of scattering intensity and alignment error of the alignment structures according to an approximate linear relation; adopting X-rays with different incidence angles to simulate, obtaining corresponding scattering intensity, calculating according to an approximate mapping model to obtain an overlay error, and determining an optimal incidence angle according to the overlay error precision; and measuring the overlay structure by adopting an optimal incidence angle to obtain an overlay error. The method can solve the problems of low measurement speed, multiple steps and complex data processing in overlay error measurement.
Description
Technical Field
The invention belongs to the field of overlay error measurement, and particularly relates to an overlay error measurement method and system based on X-ray incidence angle optimization.
Background
Overlay error is a very important parameter in integrated circuit manufacture, reflects the alignment accuracy of the current photolithography process layer and the front photolithography process layer, directly relates to the accuracy control of critical dimensions, the process consistency and the optimization of device performance, and is the key of process optimization.
The existing overlay error measurement method is mainly based on an optical imaging or non-imaging diffraction method. The overlay error measurement method based on optical imaging directly observes the overlay mark in the nanostructure through imaging equipment (such as a microscope) and measures the position offset of the overlay mark on the two process layers. The method has the advantages of low equipment cost and high measurement speed. However, due to limitations in optical resolution, microscopes may not be satisfactory in small-size, complex-structured integrated circuit measurements. Optical diffraction (scatterometry) is another commonly used overlay error measurement method, and by analyzing diffraction or scattering phenomena generated by interaction of incident light and an overlay mark and analyzing the intensity, phase or direction of the diffracted or scattered light, information of the overlay error can be deduced. The optical diffraction method can realize rapid and nondestructive measurement and is suitable for large-area overlay error evaluation. However, it places high demands on the surface topography and optical properties of the sample.
As semiconductor devices become smaller in size, structures become more complex, and diffraction-based measurement methods extend to short wavelength X-rays, forming nanostructure measurement techniques based on X-ray scattering. The patent with publication number CN107533020a discloses a computationally efficient X-ray based overlay error measurement, which indicates that when scanning measurement is performed along an incident angle, the overlay error causes an approximately linear shift in the minimum position of the scattering curve, so that a linear mapping relationship between the minimum position shift and the overlay error can be established, thereby realizing the measurement of the overlay error. The publication CN115790469a discloses a method and apparatus for measuring integrated circuit overlay error based on small angle X-ray scattering, which derives the approximate linear relationship. However, the existing methods all need to perform multi-incidence angle measurement, and have the disadvantages of long measurement time and high measurement complexity.
Therefore, there is a need for an overlay error measurement method with simple measurement configuration and high measurement speed, so as to solve the above problems in the prior art.
Disclosure of Invention
Aiming at the defects or improvement demands of the prior art, the invention provides an overlay error measurement method and system based on X-ray incidence angle optimization, and aims to realize high-precision extraction of the overlay error with simple measurement configuration and rapid measurement speed.
To achieve the above object, according to a first aspect of the present invention, there is provided an overlay error measurement method based on X-ray incidence angle optimization, comprising the steps of:
s1, determining the relation between the overlay error of the overlay structure and the scattering intensity based on X-ray scattering field modeling;
s2, based on the relation between the overlay error and the scattering intensity of the overlay structure, obtaining an approximate linear relation between the relative difference of the scattering intensity of the overlay structure and the ideal double-layer nano structure and the overlay error;
s3, setting a pair of overlay structures with upper and lower layer offsets of delta+D and delta-D, and a pair of ideal double-layer nano structures with corresponding upper and lower layer offsets of +D and-D, wherein delta is an overlay error; substituting the scattering intensities corresponding to the two structures into the approximate linear relation to obtain an approximate mapping model of the scattering intensity of the overlay structure and the overlay error;
s4, simulating by adopting X-rays with different incidence angles to obtain corresponding scattering intensity, so as to calculate an overlay error according to the approximate mapping model, and determining an optimal X-ray incidence angle according to the overlay error precision;
and S5, measuring the overlay structure to be measured by adopting an optimal X-ray incidence angle to obtain an overlay error.
As a further preferred aspect, in step S1, a relation between the overlay error and the overlay structure shape factor is determined, and then the scattering intensity is taken as the square of the overlay structure shape factor.
As a further preferred aspect, in step S1, the relationship between the overlay error and the scattering intensity of the overlay structure is:
P(q x ,q z )＝|F| 2 [(Δρ 1 +Δρ 2 cos Z) 2 +(Δρ 2 sin Z) 2 ]
wherein P (q) x ,q z ) For scattering intensity of overlay structure, Δρ 1 Electron density difference between the lower structure and the filling layer; Δρ 2 Is the electron density difference between the upper structure and the air layer; q x And q z X is the periodic direction of the overlay structure, and Z is the height direction of the overlay structure; s is the vertical distance between the lower layer structure and the upper layer structure, and F is the shape factor of the single-layer section of the overlay structure.
As a further preferred aspect, in step S2, the approximate linear relationship is:
wherein P is 0 (q x ,q z ) Scattering intensity for ideal bilayer nanostructure without overlay error, y=q z S，A＝Δρ 1 +Δρ 2 cos Y，B＝Δρ 2 sin Y。
As a further preferred aspect, in step S3, the approximate mapping model is:
wherein P is + ,P - Scattering intensity of the overlay structure with the upper layer and the lower layer offset delta+D and delta-D respectively; a is that + ＝Δρ 1 +Δρ 2 cos M,B + ＝Δρ 2 sin M,A - ＝Δρ 1 +Δρ 2 cos N,B - ＝Δρ 2 sin N；M＝+q x D+q z S,N＝-q x D+q z S。
As a further preferable mode, step S4 is to obtain, for a certain incident angle, scattering intensities under N preset overlay errors through simulation, so as to calculate N extraction overlay errors according to the approximate mapping model, and calculate a deviation between the N preset overlay errors and the extraction overlay errors; and selecting the incident angle with the smallest deviation as the optimal X-ray incident angle.
As a further preferred embodiment, step S4 is performed in a manner of calculating the deviation MSE between the preset overlay error and the extracted overlay error:
wherein delta input,i For the ith preset overlay error, delta extracted,i Overlay error is extracted for the ith.
According to a second aspect of the present invention, there is provided an overlay error measurement system based on X-ray incidence angle optimization, comprising a processor for performing the above described overlay error measurement method based on X-ray incidence angle optimization.
According to a third aspect of the present invention, there is provided a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the above described overlay error measurement method based on X-ray angle of incidence optimization.
In general, compared with the prior art, the above technical solution conceived by the present invention mainly has the following technical advantages:
1. according to the invention, a mapping model of the scattering intensity and the overlay error is established, the incidence angle scanning is avoided through experimental configuration optimization, the overlay sample is measured only under a single optimized incidence angle, the rapid high-precision overlay error extraction is realized, and the problems of low measurement speed, multiple steps and complex data processing in the current overlay error measurement are solved.
2. The invention skillfully obtains the approximate linear relation between the relative difference of the scattering intensity of the overlay structure and the corresponding ideal structure and the overlay error, and further sets the overlay structure with positive and negative offset, thereby determining the mapping model of the scattering intensity and the overlay error; therefore, the overlay error accuracy obtained under each incident angle can be rapidly determined through simulation, the incident angle optimization is rapidly realized, and the optimal X-ray incident angle is obtained.
Drawings
FIG. 1 is a flowchart of an overlay error measurement method based on X-ray incidence angle optimization according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for measuring X-ray scattering of a nanostructure according to an embodiment of the present invention;
FIG. 3 is a schematic illustration of an alignment nanostructure according to an embodiment of the present invention;
fig. 4 (a) and (b) are schematic diagrams of alignment structures for setting positive and negative bias amounts according to embodiments of the present invention;
fig. 5 is a schematic diagram of an approximate mapping relationship between the experimental configuration optimized backscatter intensity combination and overlay error δ according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The overlay error measurement method based on the optimization of the X-ray incidence angle provided by the embodiment of the invention, as shown in fig. 1, comprises the following steps:
s1, calculating the scattering intensity of the overlay nanostructure based on the X-ray scattering field modeling principle as shown in FIG. 2.
As shown in fig. 3, the overlay structure includes an upper layer structure, a filling layer and a lower layer structure from top to bottom; the form factor of the overlay structure can be written as:
wherein Δρ 1 ＝ρ 1 -ρ 2 ，ρ 1 Electron density ρ for the underlying structure 2 Electron density for the filling layer; Δρ 2 ＝ρ 3 -ρ 0 ，ρ 3 Electron density ρ for the upper layer structure 0 Is the electron density of the air layer; q x And q z X is the periodic direction of the overlay structure, and Z is the height direction of the overlay structure; delta is an overlay error, S is a vertical distance between the lower layer structure and the upper layer structure, and F is a shape factor of a single-layer section of the overlay structure.
Scattering intensity P (q) x ,q z ) Can be represented by the following formula:
P(q x ,q z )＝|F(q x ,q z )| 2 ＝|F| 2 [(Δρ 1 +Δρ 2 cos Z) 2 +(Δρ 2 sin Z) 2 ] (2)
wherein z=q x ·δ+q z S。
S2, calculating the relative difference between the scattering intensity of the overlay nanostructure and the scattering intensity of the ideal double-layer nanostructure, and obtaining the approximate linear relation between the overlay nanostructure and the overlay error.
In this embodiment, the approximate linear relationship is:
wherein P is 0 (q x ,q z ) Is free of overlayScattering intensity of ideal bilayer nanostructure of error, y=q z S，A＝Δρ 1 +Δρ 2 cos Y,B＝Δρ 2 sin Y。
S3, based on a pair of alignment structures with positive and negative offset, calculating the combination of the scattering intensities of the alignment structures according to an approximate linear relation to obtain an approximate mapping model of the scattering intensities and alignment errors.
As shown in fig. 4, an alignment structure with upper and lower layer offsets of delta+d and delta-D and a corresponding ideal double-layer nano structure with upper and lower layer offsets of +d and-D are provided;
from the approximate linear relationship, it is possible to obtain:
wherein P is + ,P - Scattering intensity when the upper layer and the lower layer are offset by delta+D and delta-D, P +D ,P -D The scattering intensity of the ideal double-layer nano structure with the upper layer and the lower layer being shifted to +D and-D respectively;
A + ＝Δρ 1 +Δρ 2 cos M,B + ＝Δρ 2 sin M,A - ＝Δρ 1 +Δρ 2 cos N,B - ＝Δρ 2 sin N; and M= +q x D+q z S,N＝-q x D+q z S。
The ideal bilayer nanostructure scattering intensity relationship for the upper and lower layer offset of +d, -D in equation (4) is: p (P) +D /P -D ＝K 3 ；
Wherein,
combining the equations, an approximate mapping model of the scattering intensity and overlay error is obtained:
and S4, optimizing the incident angle according to the overlay error extraction precision based on the approximate mapping model.
Specifically, the simulation is performed by using X-rays with different incidence angles, and for a certain incidence angle, the scattering intensity (i.e., P + 、P - ) Thereby obtaining a corresponding extraction overlay error according to the approximate mapping model calculation, and according to the deviation of the preset overlay error and the extraction overlay error; and selecting the incident angle with the smallest deviation as the optimal X-ray incident angle.
Further, N preset overlay errors are input in total during simulation; the calculation mode of the deviation MSE of the preset overlay error and the extracted overlay error is as follows:
wherein delta input,i For the i-th input preset overlay error, delta extracted,i And (5) extracting the overlay error obtained by calculation of the ith.
S5, adopting an optimal X-ray incidence angle, and extracting the overlay error with high precision under the optimal experimental configuration.
The following are specific examples:
measuring an overlay error of an integrated circuit, comprising: simulation of the trapezoid overlay structure shown in FIG. 3 is performed, and the simulation parameters include bottom width w 1 The alignment feature height h=100 nm, the period l=125 nm of the alignment structure in the X direction, the vertical distance s=150 nm between the front layer structure mark and the current layer structure mark, and the electron density ρ 1 ＝3、ρ 2 ＝2、ρ 3 =1; as shown in fig. 4, the offset d=20nm is set, the first-order scattering intensity is taken, and the overlay error adopted by the simulation is-10 nm to 10nm. After optimization, the determined optimal incident angle is 39.8 DEG, and the overlay error and the extraction are simulatedThe overlay error relationship is shown in fig. 5. This fig. 5 shows that the linear mapping exists and is quite obvious and is consistent with the analytical formula derived by the present invention.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (9)
1. An overlay error measurement method based on X-ray incidence angle optimization is characterized by comprising the following steps:
s1, determining the relation between the overlay error of the overlay structure and the scattering intensity based on X-ray scattering field modeling;
s2, based on the relation between the overlay error and the scattering intensity of the overlay structure, obtaining an approximate linear relation between the relative difference of the scattering intensity of the overlay structure and the ideal double-layer nano structure and the overlay error;
s3, setting a pair of overlay structures with upper and lower layer offsets of delta+D and delta-D, and a pair of ideal double-layer nano structures with corresponding upper and lower layer offsets of +D and-D, wherein delta is an overlay error; substituting the scattering intensities corresponding to the two structures into the approximate linear relation to obtain an approximate mapping model of the scattering intensity of the overlay structure and the overlay error;
s4, simulating by adopting X-rays with different incidence angles to obtain corresponding scattering intensity, so as to calculate an overlay error according to the approximate mapping model, and determining an optimal X-ray incidence angle according to the overlay error precision;
and S5, measuring the overlay structure to be measured by adopting an optimal X-ray incidence angle to obtain an overlay error.
2. The overlay error measurement method based on the optimization of the incident angle of X-rays according to claim 1, wherein in step S1, a relation between the overlay error and the overlay structure shape factor is determined, and then the scattering intensity is taken as the square of the overlay structure shape factor.
3. The overlay error measurement method based on the optimization of the X-ray incidence angle according to claim 2, wherein in step S1, the relationship between the overlay error and the scattering intensity of the overlay structure is:
P(q x ,q z )＝|F| 2 [(Δρ 1 +Δρ 2 cosZ) 2 +(Δρ 2 sinZ) 2 ]
wherein P (q) x ,q z ) For scattering intensity of overlay structure, Δρ 1 Electron density difference between the lower structure and the filling layer; Δρ 2 Is the electron density difference between the upper structure and the air layer; q x And q z X is the periodic direction of the overlay structure, and Z is the height direction of the overlay structure; s is the vertical distance between the lower layer structure and the upper layer structure, and F is the shape factor of the single-layer section of the overlay structure.
4. The overlay error measurement method based on X-ray incidence angle optimization as claimed in claim 3, wherein in step S2, the approximate linear relationship is:
wherein P is 0 (q x ,q z ) Scattering intensity for ideal bilayer nanostructure without overlay error, y=q z S，A＝Δρ 1 +Δρ 2 cosY，B＝Δρ 2 sinY。
5. The overlay error measurement method based on X-ray incidence angle optimization of claim 1, wherein in step S3, the approximate mapping model is:
wherein P is + ,P - Scattering intensity of the overlay structure with the upper layer and the lower layer offset delta+D and delta-D respectively; a is that + ＝Δρ 1 +Δρ 2 cosM,B + ＝Δρ 2 sinM,A - ＝Δρ 1 +Δρ 2 cosN,B - ＝Δρ 2 sinN；M＝+q x D+q z S,N＝-q x D+q z S。
6. The overlay error measurement method based on X-ray incidence angle optimization according to any one of claims 1-5, wherein step S4, for a certain incidence angle, acquires scattering intensities under N preset overlay errors respectively through simulation, thereby obtaining N extracted overlay errors according to the approximate mapping model calculation, and obtaining a deviation of the N preset overlay errors from the extracted overlay errors; and selecting the incident angle with the smallest deviation as the optimal X-ray incident angle.
7. The overlay error measurement method based on X-ray incidence angle optimization according to claim 6, wherein in step S4, the deviation MSE between the preset overlay error and the extracted overlay error is calculated by:
wherein delta input,i For the ith preset overlay error, delta extracted,i For the i-th extraction sleeveAnd (5) engraving errors.
8. An overlay error measurement system based on X-ray incidence angle optimization, comprising a processor for performing the X-ray incidence angle optimization-based overlay error measurement method of any one of claims 1-7.
9. A computer-readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the X-ray angle of incidence optimization-based overlay error measurement method according to any one of claims 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311417295.8A CN117492331A (en) | 2023-10-27 | 2023-10-27 | Overlay error measurement method and system based on X-ray incidence angle optimization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311417295.8A CN117492331A (en) | 2023-10-27 | 2023-10-27 | Overlay error measurement method and system based on X-ray incidence angle optimization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117492331A true CN117492331A (en) | 2024-02-02 |
Family
ID=89671849
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311417295.8A Pending CN117492331A (en) | 2023-10-27 | 2023-10-27 | Overlay error measurement method and system based on X-ray incidence angle optimization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117492331A (en) |
-
2023
- 2023-10-27 CN CN202311417295.8A patent/CN117492331A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI711096B (en) | Method of optical metrology, computer program product, and metrology module | |
| TWI620004B (en) | Method and system for pattern correction and related computer program product | |
| TWI733150B (en) | Measurement of multiple patterning parameters | |
| CN107533995B (en) | Hot spot monitoring based on model | |
| KR101281301B1 (en) | Scatterometry metrology target design optimization | |
| TWI631476B (en) | Method and system for on-device metrology | |
| TWI440984B (en) | Method and system for measuring in patterned structures | |
| CN110244527B (en) | Overlay mark morphology and measurement condition optimization method | |
| IL259489A (en) | X-ray scatterometry metrology for high aspect ratio structures | |
| TWI780470B (en) | Method and apparatus for lithographic process performance determination | |
| JP6924261B2 (en) | Hybrid weighing for characterizing patterned wafers | |
| CN108886006A (en) | It is measured using the semiconductor of the information from multiple processing steps | |
| CN109643672A (en) | The optical measurement based on model of semiconductor structure with anisotropy dielectric constant | |
| CN107408519A (en) | Single parameter measurement based on model | |
| TW201830161A (en) | Design and correction using stack difference | |
| KR20130047731A (en) | Method and system for optimizing optical inspection of patterned structures | |
| TW201303482A (en) | Methods and apparatus for calculating electromagnetic scattering properties of a structure and for reconstruction of approximate structures | |
| TW202104841A (en) | Methods and systems for combining x-ray metrology data sets to improve parameter estimation | |
| CN110347017A (en) | A kind of overlay error extracting method based on optical diffraction | |
| CN104482878A (en) | Large-area online measurement device and method for geometrical parameters of nano-structure | |
| CN114608494B (en) | Nano-structure three-dimensional shape small-angle X-ray scattering measurement method and device | |
| TW201506388A (en) | Pattern shape evaluation method and apparatus | |
| JP2020533643A (en) | Methods for Aligning a Set of Complementary Diffraction Patterns and Related Measurement Methods and Devices | |
| TWI401549B (en) | Method for designing two dimensional overlay array target and method and system for measureing overlay error using the same | |
| CN117492331A (en) | Overlay error measurement method and system based on X-ray incidence angle optimization |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |