CN117484382A - Diaphragm for grinding head of chemical mechanical grinding equipment - Google Patents

Diaphragm for grinding head of chemical mechanical grinding equipment Download PDF

Info

Publication number
CN117484382A
CN117484382A CN202311514733.2A CN202311514733A CN117484382A CN 117484382 A CN117484382 A CN 117484382A CN 202311514733 A CN202311514733 A CN 202311514733A CN 117484382 A CN117484382 A CN 117484382A
Authority
CN
China
Prior art keywords
diaphragm
separation structure
membrane
pressure
annular separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202311514733.2A
Other languages
Chinese (zh)
Inventor
左少杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Ziniu Yidong Technology Co ltd
Original Assignee
Beijing Ziniu Yidong Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Ziniu Yidong Technology Co ltd filed Critical Beijing Ziniu Yidong Technology Co ltd
Priority to CN202311514733.2A priority Critical patent/CN117484382A/en
Publication of CN117484382A publication Critical patent/CN117484382A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces

Abstract

The invention relates to the technical field of semiconductor integrated circuit manufacturing equipment, in particular to a diaphragm of a grinding head for chemical mechanical grinding equipment. The diaphragm for the grinding head of the chemical mechanical grinding equipment comprises the circular diaphragm, the annular separation structure and the pressure regulating part, and particularly, the diaphragm reduces the diameter of the circular diaphragm to correspondingly reduce the width of a first area of the diaphragm, and meanwhile, the pressure ring connected with the pressure regulator is arranged on the outer side of the first area of the diaphragm, so that the pressure ring directly contacts a wafer and acts on the edge part of the wafer, thereby realizing the accurate control of the edge pressure of the wafer, realizing the accurate control of the edge thickness of the wafer and realizing the planarization of the surface of the wafer.

Description

Diaphragm for grinding head of chemical mechanical grinding equipment
Technical Field
The invention relates to the technical field of semiconductor integrated circuit manufacturing equipment, in particular to a diaphragm of a grinding head for chemical mechanical grinding equipment.
Background
One of the cores of the integrated circuit industry is chip fabrication, which is in wafer processing. Chemical mechanical polishing (Chemical Mechanical Polish) is a core process in a wafer processing process, and is a precision processing technique for planarizing a wafer surface. The most central component of the cmp apparatus is the polishing head, and the most important component of the polishing head that acts directly on the wafer is the membrane.
Existing circular diaphragms are 300mm in diameter, completely cover the entire wafer, and the diaphragm is divided into a plurality of zones by an annular dividing structure. During the process, the diaphragm directly pressurizes the wafer, and in order to achieve planarization of the wafer surface, each region of the diaphragm is pressurized differently. Fig. 1 and 2 are schematic structural views of a conventional diaphragm, in which the diaphragm is fixed by a clamp at the extreme edge of the diaphragm, resulting in a very small control range of the first region of the diaphragm and the second region of the diaphragm at the extreme edge, and the air pressures are mutually affected, so that the thickness of the extreme edge of a wafer is difficult to control, and the conditions of more grinding and less grinding often occur.
Accordingly, the present invention has been made.
Disclosure of Invention
The invention aims to provide a diaphragm for a grinding head of chemical mechanical grinding equipment, which solves the problem that in the prior art, the thickness of an edge is difficult to control during the grinding processing of a wafer, so that more grinding and less grinding are frequently caused.
In a first aspect, the present invention provides a diaphragm for a polishing head of a chemical mechanical polishing apparatus, comprising:
the diameter of the circular membrane is smaller than that of the wafer to be processed, and the circular membrane is suitable for being pressed at the center of the upper surface of the wafer to be processed;
the annular separation structure comprises a top plate and a side wall, the top of the side wall is connected with one end of the top plate, and the bottom of the side wall is connected with the circular membrane; the annular separation structure comprises a first annular separation structure and a second annular separation structure which is arranged on the outer side of the first annular separation structure in a surrounding mode, and the side wall of the second annular separation structure is connected with the upper edge of the circular membrane;
the pressure adjusting part comprises a pressure regulator and a pressure ring, the pressure ring is sleeved on the outer side of the edge side wall, and the top of the pressure ring is connected with the pressure regulator; the inner diameter of the pressure ring is the same as the diameter of the circular diaphragm, and the outer diameter of the pressure ring is not smaller than the diameter of the wafer to be processed, and the pressure ring is suitable for being pressed on the edge of the wafer to be processed through the bottom surface.
The diaphragm for the polishing head of the chemical mechanical polishing apparatus according to the present invention may further have the following additional technical features:
in one embodiment of the present invention, the pressure regulator is a pressure air bag, the pressure air bag is disposed on the upper surface of the top plate of the second annular separation structure, and the edge of the pressure air bag is connected with the upper surface of the pressure ring.
In one specific embodiment of the present invention, the pressure adjusting part further includes an annular connection plate, the connection plate is disposed between the top plate of the second annular partition structure and the pressure air bag, and an outer edge is connected with an inner edge of an upper surface of the pressure ring.
In one specific embodiment of the invention, the bottom surface of the pressure ring is an inclined surface, the inner edge of the inclined surface and the lower surface of the circular diaphragm are positioned on the same plane, and the outer edge of the inclined surface protrudes out of the lower surface of the circular diaphragm.
In one specific embodiment of the invention, the device further comprises a first clamping ring and a second clamping ring, wherein the first clamping ring is arranged on the side wall of the first annular separation structure, and the second clamping ring is arranged on the side wall of the second annular separation structure.
In a specific embodiment of the invention, grooves are formed in the outer side walls of the first clamping ring and the second clamping ring, protrusions are formed in the inner sides of the side walls of the first annular separation structure and the second annular separation structure, and the protrusions are clamped in the corresponding grooves.
In one embodiment of the invention, the annular separation structure further comprises a third annular separation structure, which is surrounded by the second annular separation structure.
In one embodiment of the present invention, the annular separation structure is integrally formed with the circular membrane.
The second aspect of the present invention also provides a polishing head for a chemical mechanical polishing apparatus, comprising:
a polishing head body;
the membrane of any one of the above, the membrane being connected to the bottom of the polishing head body; and
and the check ring is sleeved on the periphery of the diaphragm.
The third aspect of the present invention also provides a chemical mechanical polishing apparatus, including the polishing head.
Compared with the prior art, the invention has the following advantages:
the diaphragm for the grinding head of the chemical mechanical grinding equipment comprises the circular diaphragm, the annular separation structure and the pressure regulating part, and particularly, the diaphragm reduces the diameter of the circular diaphragm to correspondingly reduce the width of a first area of the diaphragm, and meanwhile, the pressure ring connected with the pressure regulator is arranged on the outer side of the first area of the diaphragm, so that the pressure ring directly contacts a wafer and acts on the edge part of the wafer, thereby realizing the accurate control of the edge pressure of the wafer, realizing the accurate control of the edge thickness of the wafer and realizing the planarization of the surface of the wafer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a conventional separator.
Fig. 2 is an enlarged view of the square frame portion in fig. 1.
Fig. 3 is a schematic structural view of an exemplary separator of the present invention.
Fig. 4 is an enlarged view of the square frame portion in fig. 3.
Reference numerals illustrate:
100-separator;
10-a wafer to be processed;
20' -circular membrane, 30' -annular separation structure, 60' -membrane first zone, 70' -membrane second zone, 80' -clamp;
20-a circular membrane, 30-an annular separation structure, 30 a-a first annular separation structure, 30 b-a second annular separation structure, 30 c-a third annular separation structure; 40-pressure regulating part, 41-pressure air bag, 42-pressure ring, 43-connecting plate, 51-first snap ring, 52-second snap ring, 60-diaphragm first area, 70-diaphragm second area.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "below," "upper," "above," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein interpreted accordingly.
Fig. 1 and 2 are schematic structural views of a conventional diaphragm, wherein the diaphragm includes a circular diaphragm 20 'and an annular partition structure 30', wherein the diameter of the circular diaphragm 20 'is the same as that of a wafer 10 to be processed, the diaphragm is required to be fixed by a clamp 80' at the most edge, the control range of a diaphragm first area 60 'and a diaphragm second area 70' at the most edge is very small, and air pressures are affected each other, so that the thickness of the most edge of the wafer is difficult to control, and the situation of more grinding and less grinding often occurs.
The present invention proposes an improved diaphragm because the thickness of the extreme edge of the wafer is difficult to control in the existing diaphragm design, and more or less grinding often occurs. The separator of the present invention will be further described with reference to the accompanying drawings.
Fig. 3-4 present schematic structural views of an exemplary diaphragm of the present invention. As shown in the drawings, the diaphragm of the polishing head for the chemical mechanical polishing apparatus of the present invention comprises a circular diaphragm 20, an annular partition structure 30 and a pressure adjusting part 40, wherein the diameter of the circular diaphragm 20 is smaller than that of the wafer 10 to be processed, and is adapted to be pressed onto the center of the upper surface of the wafer 10 to be processed; the annular separation structure 30 comprises a top plate and a side wall, wherein the top of the side wall is connected with one end of the top plate, and the bottom of the side wall is connected with the circular membrane 20; the annular separation structure 30 comprises a first annular separation structure 30a and a second annular separation structure 30b which is arranged on the outer side of the first annular separation structure 30a in a surrounding mode, and the side wall of the second annular separation structure 30b is connected with the upper edge of the circular membrane 20; the pressure regulating part 40 comprises a pressure regulator and a pressure ring 42, the pressure ring 42 is sleeved on the outer side of the edge side wall, and the top is connected with the pressure regulator; the inner diameter of the pressure ring 42 is the same as the diameter of the circular diaphragm 20, and the outer diameter is not smaller than the diameter of the wafer 10 to be processed, and is suitable for being pressed on the edge of the wafer 10 to be processed through the bottom surface.
In the present invention, the first annular separation structure 30a, the second annular separation structure 30b and the circular membrane 20 together form a first region 60 of the membrane, and the second annular separation structure 30b and the circular membrane 20 together form a second region of the membrane. Because the diameter of the circular membrane 20 is smaller than that of the wafer 10 to be processed and is correspondingly pressed on the center of the upper surface of the wafer 10 to be processed, the circular membrane 20 corresponding to the first area 60 and the second area 70 of the membrane can act on the corresponding center area of the wafer 10 to be processed by inflating the first area 60 and the second area 70 of the membrane during the grinding process.
In the present invention, by providing the pressure regulating portion 40 including the pressure regulator and the pressure ring 42, it is possible to apply pressure to the pressure ring 42 through the pressure regulator, thereby acting on the corresponding edge region of the wafer 10 to be processed.
In this way, by controlling the air pressure introduced into the first diaphragm region 60 and the second diaphragm region 70 and controlling the pressure of the pressure regulator, the pressure control of each region on the wafer surface can be realized, and further the polishing degree of each region on the wafer surface can be precisely controlled, so that the polishing degree of the edge portion and the center portion of the wafer is the same, and the planarization of the wafer surface is realized.
According to the diaphragm provided by the embodiment of the invention, the diameter of the circular diaphragm 20 is reduced, and the pressure ring 42 connected with the pressure regulator is arranged outside the second annular separation structure 30b, so that the pressure ring 42 directly contacts a wafer and acts on the edge part of the wafer, thereby realizing the accurate control of the thickness of the edge of the wafer and realizing the planarization of the surface of the wafer.
Preferably, the diameter of the circular membrane 20 is more than 2mm smaller than the diameter of the wafer 10 to be processed. In one embodiment, the diameter of the wafer 10 to be processed is 300mm, the diameter of the circular diaphragm 20 may be 298mm, the inner diameter of the pressure ring 42 is 298mm, and the outer diameter is not less than 300mm, so that the circular diaphragm 20 and the pressure ring 42 cooperate to completely cover the wafer 10 to be processed and achieve precise control of the pressure of the wafer 10 to be processed.
In one embodiment, the pressure regulator is a pressure bladder 41, the pressure bladder 41 is provided on the upper surface of the top plate of the second annular separation structure 30b, and the rim is connected to the upper surface of the pressure ring 42.
Specifically, by setting the pressure regulator as the pressure bladder 41, the pressure regulating portion 40, the diaphragm first region 60, and the diaphragm second region 70 adopt the same control method, thereby facilitating overall control.
In one embodiment, the pressure regulating portion 40 further includes an annular connection plate 43, the connection plate 43 being provided between the top plate of the second annular partition structure 30b and the pressure bladder 41, and the outer edge being connected with the inner edge of the upper surface of the pressure ring 42.
The contact area between the pressure ring 42 and the pressure air bag 41 can be increased by arranging the connecting plate 43 connected with the pressure ring 42, so that the pressure in the pressure air bag 41 can be conveniently transmitted to the pressure ring 42.
In one embodiment, the bottom surface of the pressure ring 42 is beveled and the inner edge of the bevel is coplanar with the lower surface of the circular diaphragm 20 and the outer edge of the bevel protrudes from the lower surface of the circular diaphragm 20. In this way, the pressure ring 42 can be used to press the wafer 10 to be processed to achieve accurate control of the pressure at the edge of the wafer 10 to be processed, and the inclined surface can be used to limit the position of the wafer 10 to be processed, so as to avoid displacement of the wafer 10 to be processed.
In one embodiment, the device further comprises a first snap ring 51 and a second snap ring 52, wherein the first snap ring 51 is disposed on a side wall of the first annular separation structure 30a, and the second snap ring 52 is disposed on a side wall of the second annular separation structure 30 b.
By providing the first snap ring 51 and the second snap ring 52, the direction of expansion of the first and second regions 60, 60 of the diaphragm can be controlled, thereby precisely controlling the pressure of the first region 60 of the diaphragm against the upper surface of the diaphragm.
In one embodiment, the first snap ring 51 is smaller than the height of the side wall of the first annular separation structure 30a, and the top of the first snap ring 51 is abutted with the top plate of the first annular separation structure 30a, and a gap exists between the bottom of the first snap ring 51 and the circular membrane 20; similarly, the height of the second snap ring 52 is smaller than the height of the side wall of the second annular separation structure 30b, and the top of the second snap ring 52 is abutted to the top plate of the second annular separation structure 30b, and a gap exists between the bottom of the second snap ring 52 and the circular membrane 20. In this way, the first snap ring 51 and the second snap ring 52 can be prevented from contacting the circular diaphragm 20, thereby preventing the influence of the pressure applied to the wafer 10 to be processed.
In one embodiment, the outer side walls of the first snap ring 51 and the second snap ring 52 are provided with grooves, and the inner sides of the side walls of the first annular separation structure 30a and the second annular separation structure 30b are provided with protrusions, and the protrusions are clamped in the corresponding grooves.
Through set up recess and the arch of looks adaptation on first snap ring 51, second snap ring 52 and the lateral wall of its adaptation connection, and then make the connection of both inseparable and avoid first snap ring 51, second snap ring 52 to drop. Meanwhile, the protrusions are arranged on the side walls of the first annular separation structure 30a and the second annular separation structure 30b, so that the strength of the side walls can be further increased, the deformation resistance of the side walls is further improved, the mutual interference caused by different pressures between two adjacent isolated areas can be effectively avoided, the pressure regulation capacity of the areas corresponding to the boundaries between the two adjacent areas can be improved, and the quality control of wafer grinding is facilitated.
In one embodiment, the annular separation structure 30 further comprises a third annular separation structure 30c, the third annular separation structure 30c being surrounded by the second annular separation structure 30 b. Specifically, the third annular partition structure 30c may be one or more. When the third annular partition structures 30c are plural, the plural third annular partition structures 30c may be disposed in a nested manner so as to form plural annular partitions on the diaphragm, and the plural third annular partition structures 30c may be disposed at intervals from each other, so that plural independent partitions are formed in the annular diaphragm first region 60. The pressure of each subarea is independently controlled, so that the air pressure of each subarea is not influenced, and the accurate control of the thickness of the wafer edge is realized.
The distance of the side wall of the third annular separation structure 30c from the side wall of the first annular separation structure 30a is 1-15mm, for example 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 11mm, 12mm, 13mm, 14mm or 15mm. The distance from the side wall of the first annular separation structure 30a to the side wall of the second annular separation structure 30b is 1-15mm and slightly greater than the thickness of the second snap ring 52, for example 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm, 10mm, 11mm, 12mm, 13mm, 14mm or 15mm.
Preferably, the annular separation structure 30 is integrally formed with the circular membrane 20.
Preferably, the pressure ring 42 is a wear resistant material, such as ceramic, silicon carbide, or the like.
The membrane of the present invention can be used for various polishing heads of chemical mechanical polishing equipment, such as a three-zone polishing head, a five-zone polishing head, a six-zone polishing head or a seven-zone polishing head. The diaphragm of the present invention may be used in various chemical mechanical polishing processes, such as a silicon polishing process, a silicon oxide polishing process, a silicon carbide polishing process, a tungsten polishing process, or a copper polishing process.
The present invention also provides a polishing head for a chemical mechanical polishing apparatus, comprising: a polishing head body; the diaphragm is connected with the bottom of the grinding head body; and the check ring is sleeved on the periphery of the diaphragm.
Preferably, the inner diameter of the collar increases with the diameter of the circular diaphragm 20. Preferably, the retainer ring inner diameter increases to the same extent as the diameter of the circular diaphragm 20.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (10)

1. A diaphragm for a polishing head of a chemical mechanical polishing apparatus, comprising:
the diameter of the circular membrane is smaller than that of the wafer to be processed, and the circular membrane is suitable for being pressed at the center of the upper surface of the wafer to be processed;
the annular separation structure comprises a top plate and a side wall, the top of the side wall is connected with one end of the top plate, and the bottom of the side wall is connected with the circular membrane; the annular separation structure comprises a first annular separation structure and a second annular separation structure which is arranged on the outer side of the first annular separation structure in a surrounding mode, and the side wall of the second annular separation structure is connected with the upper edge of the circular membrane;
the pressure adjusting part comprises a pressure regulator and a pressure ring, the pressure ring is sleeved on the outer side of the edge side wall, and the top of the pressure ring is connected with the pressure regulator; the inner diameter of the pressure ring is the same as the diameter of the circular diaphragm, and the outer diameter of the pressure ring is not smaller than the diameter of the wafer to be processed, and the pressure ring is suitable for being pressed on the edge of the wafer to be processed through the bottom surface.
2. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 1, wherein the pressure regulator is a pressure bladder provided on an upper surface of the top plate of the second annular partition structure with an edge connected to an upper surface of the pressure ring.
3. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 2, wherein the pressure adjusting portion further comprises an annular connection plate provided between the top plate of the second annular partition structure and the pressure bladder, and an outer edge is connected with an inner edge of an upper surface of the pressure ring.
4. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 1, wherein a bottom surface of the pressure ring is inclined, and an inner edge of the inclined surface is located on the same plane as a lower surface of the circular membrane, and an outer edge of the inclined surface protrudes from the lower surface of the circular membrane.
5. The membrane for a polishing head of a chemical mechanical polishing apparatus of claim 1, further comprising a first snap ring disposed on a sidewall of the first annular separation structure and a second snap ring disposed on a sidewall of the second annular separation structure.
6. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 5, wherein the outer sidewalls of the first and second clamps are each provided with a groove, and the inner sides of the sidewalls of the first and second annular separation structures are each provided with a protrusion, the protrusions being clamped in the corresponding grooves.
7. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 1, wherein the annular separation structure further comprises a third annular separation structure surrounded by the second annular separation structure.
8. The membrane for a polishing head of a chemical mechanical polishing apparatus as recited in claim 1 or 7, wherein the annular separation structure is integrally formed with the circular membrane.
9. A polishing head for a chemical mechanical polishing apparatus, comprising:
a polishing head body;
the membrane of any one of claims 1-8, the membrane being connected to a bottom of the polishing head body; and
and the check ring is sleeved on the periphery of the diaphragm.
10. A chemical mechanical polishing apparatus comprising the polishing head of claim 9.
CN202311514733.2A 2023-11-14 2023-11-14 Diaphragm for grinding head of chemical mechanical grinding equipment Pending CN117484382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311514733.2A CN117484382A (en) 2023-11-14 2023-11-14 Diaphragm for grinding head of chemical mechanical grinding equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202311514733.2A CN117484382A (en) 2023-11-14 2023-11-14 Diaphragm for grinding head of chemical mechanical grinding equipment

Publications (1)

Publication Number Publication Date
CN117484382A true CN117484382A (en) 2024-02-02

Family

ID=89667253

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202311514733.2A Pending CN117484382A (en) 2023-11-14 2023-11-14 Diaphragm for grinding head of chemical mechanical grinding equipment

Country Status (1)

Country Link
CN (1) CN117484382A (en)

Similar Documents

Publication Publication Date Title
US11338409B2 (en) Three-zone carrier head and flexible membrane
JP7239539B2 (en) Single-side polishing head with flexible center with recess and cap
KR100727485B1 (en) Polish pad and method for manufacturing the polishing pad, and chemical mechanical polishing apparatus and method
US20020017365A1 (en) Substrate holding apparatus and substrate polishing apparatus
KR101293485B1 (en) Retainer ring of carrier head of chemical mechanical apparatus and membrane used therein
JP2002187060A (en) Substrate holding device, polishing device and grinding method
US20190270180A1 (en) Carrier head having abrasive structure on retainer ring
JPWO2006038259A1 (en) Method of manufacturing semiconductor device
US6699107B2 (en) Polishing head and apparatus with an improved pad conditioner for chemical mechanical polishing
KR101629161B1 (en) Carrier head of chemical mechanical apparatus and membrane used therein
US6746318B2 (en) Workpiece carrier with adjustable pressure zones and barriers
CN117484382A (en) Diaphragm for grinding head of chemical mechanical grinding equipment
CN114473853B (en) Diaphragm for grinding head of chemical mechanical grinding equipment
KR100719862B1 (en) Chemical-mechanical polishing device, damascene wiring forming device, and damascene wiring forming method
US6858171B1 (en) Method for making reinforced belt pad for linear chemical mechanical planarization
US20050159084A1 (en) Chemical mechanical polishing method and apparatus for controlling material removal profile
KR101411836B1 (en) Membrane of carrier head in chemical mechanical polishing apparatus and carrier head using same
WO2001094075A1 (en) Orbital polishing apparatus
KR20210045773A (en) Carrier head for chemical polishing device with connection structure between membrane and retaining ring
KR101387921B1 (en) Membrane of carrier head in chemical mechanical polishing apparatus and carrier head using same
US20240149391A1 (en) Processing apparatus
US11660721B2 (en) Dual loading retaining ring
KR100557914B1 (en) apparatus for chemical mechnical polishing in semiconductor manufacuring device
KR20180037356A (en) Bladder for carrier head in chemical mechanical polishing system
KR101621165B1 (en) Membrane for CMP

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination