CN117477336A - Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source - Google Patents
Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source Download PDFInfo
- Publication number
- CN117477336A CN117477336A CN202311417333.XA CN202311417333A CN117477336A CN 117477336 A CN117477336 A CN 117477336A CN 202311417333 A CN202311417333 A CN 202311417333A CN 117477336 A CN117477336 A CN 117477336A
- Authority
- CN
- China
- Prior art keywords
- layer
- mirror
- saturable absorber
- semiconductor saturable
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 113
- 239000004065 semiconductor Substances 0.000 title claims abstract description 101
- 239000000835 fiber Substances 0.000 title claims abstract description 92
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000013307 optical fiber Substances 0.000 claims abstract description 32
- 238000010521 absorption reaction Methods 0.000 claims abstract description 28
- 239000013590 bulk material Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 13
- 238000005086 pumping Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 46
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000002310 reflectometry Methods 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000013461 design Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 7
- 230000002745 absorbent Effects 0.000 claims description 5
- 239000002250 absorbent Substances 0.000 claims description 5
- 230000010287 polarization Effects 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 141
- 238000000034 method Methods 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 230000001105 regulatory effect Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000985 reflectance spectrum Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007526 fusion splicing Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094003—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light the pumped medium being a fibre
Abstract
The disclosure provides a semiconductor saturable absorber mirror, a preparation method and a picosecond fiber laser seed source, which can be applied to the technical field of laser. The semiconductor saturable absorber mirror includes: a substrate 10; a buffer layer 20 disposed on the substrate 10; a distributed bragg mirror layer 30 disposed on the buffer layer 20; an isolation layer 40 disposed on the distributed bragg mirror layer 30; an absorption layer 50 disposed on the isolation layer 40, the absorption layer 50 comprising a bulk material having a three-dimensional spatial structure, such that the semiconductor saturable absorber mirror has a stronger pulse narrowing capability at the same modulation depth, and a narrower pulse width is easier to obtain; a dielectric film layer 60 disposed on the absorber layer 50. The picosecond fiber laser seed source includes: the device comprises a semiconductor saturable absorber mirror, an optical fiber focusing mirror, a pumping source, a wavelength division multiplexer, a gain optical fiber, an optical fiber Bragg grating and an optical fiber isolator.
Description
Technical Field
The disclosure relates to the technical field of lasers, and more particularly relates to a semiconductor saturable absorber mirror, a preparation method thereof and a picosecond fiber laser seed source.
Background
The passive mode-locking fiber laser has the advantages of high beam quality, good environmental stability, easy heat dissipation and the like, and therefore has important application in scientific research and industrial production. The semiconductor saturable absorber formed by combining the semiconductor saturable absorber and the reflecting mirror structure has the characteristic that the reflectivity is increased along with the increase of the incident light intensity, and the pulse width can be narrowed. The semiconductor saturable absorber mirror has the advantages of self-starting, flexible design, small insertion loss, high integration level and the like, and is widely used as a key element for realizing passive mode locking.
The existing semiconductor saturable absorber mirror has the defects that the strain multiple quantum well materials are adopted as the absorbing layers, the growth of the strain multiple quantum well materials needs to be alternately switched among different growth source materials for a plurality of times, the growth thickness of each layer of material is in the nanometer level, the requirement on the growth time of a film material and the control precision of an interlayer interface is high in the material epitaxy process, the process tolerance is small, the minimum reflectivity wavelength and the design value of the semiconductor saturable absorber mirror are easily caused to deviate, and the mode locking effect of a picosecond seed source is influenced; meanwhile, because the strain multiple quantum well materials are grown in a metastable strain state, the total thickness must be controlled to be a critical thickness in order to avoid lattice mismatch, and thus the modulation depth increase amplitude of the semiconductor saturable absorber mirror is limited.
Disclosure of Invention
First, the technical problem to be solved
The prior semiconductor saturable absorber mirror adopts a strain multi-quantum well material as an absorbing layer, the strain multi-quantum well material has high preparation precision requirement and small process tolerance, and in order to solve the technical problem, the inventor finds that the consistency of the semiconductor saturable absorber mirror can be improved by adopting a bulk material to replace the strain multi-quantum well material, the deviation of the minimum reflectivity wavelength and the design value of the semiconductor saturable absorber mirror can be reduced, and a better mode locking effect can be obtained.
(II) technical scheme
In view of the above, the present disclosure provides a semiconductor saturable absorber mirror, a method for manufacturing the same, and a picosecond fiber laser seed source.
According to a first aspect of the present disclosure, there is provided a semiconductor saturable absorber mirror comprising: a substrate 10; a buffer layer 20 disposed on the substrate 10; a distributed bragg mirror layer 30 disposed on the buffer layer 20; an isolation layer 40 disposed on the distributed bragg mirror layer 30; an absorption layer 50 disposed on the isolation layer 40, the absorption layer 50 including a bulk material having a three-dimensional spatial structure; a dielectric film layer 60 disposed on the absorber layer 50.
According to an embodiment of the present disclosure, the absorbent layer 50 is prepared from materials including: indium gallium arsenide, the composition of indium in absorber layer 50 is 0.2 to 0.3; the thickness of the absorption layer 50 is 70nm to 80nm; the growth temperature of the absorber layer 50 is 450 to 600 ℃.
According to an embodiment of the present disclosure, the number of periods of the distributed bragg mirror layer 30 is 27 to 30, wherein the distributed bragg mirror layer 30 includes therein distributed bragg mirror units corresponding to the periods, the distributed bragg mirror units including: gallium arsenide sub-layer 31; and a gallium arsenide aluminum sub-layer 32 disposed on the gallium arsenide sub-layer 31; wherein the aluminum of the aluminum gallium arsenide sublayer 32 has a composition of 0.85 to 0.95; the optical thickness of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is 600 ℃ to 750 ℃.
According to an embodiment of the present disclosure, the number of periods of the dielectric film 60 is 1 to 4, wherein the dielectric film 60 includes a dielectric film unit corresponding to the period, and the dielectric film unit includes: a silicon dioxide sub-layer 61; and a silicon nitride sub-layer 62 disposed on the silicon dioxide sub-layer 61; wherein, the optical thickness of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 are respectively lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 is 250 ℃ to 300 ℃.
According to an embodiment of the present disclosure, the buffer layer 20 is a gallium arsenide material having a thickness of 0.5 μm to 2 μm.
According to an embodiment of the present disclosure, spacer layer 40 is a gallium arsenide material having a thickness of 70nm to 75nm.
A second aspect of the present disclosure provides a method for manufacturing a semiconductor saturable absorber mirror, comprising: step A: preparing a buffer layer 20 on a substrate 10; and (B) step (B): preparing a distributed bragg mirror layer 30 on the buffer layer 20; step C: preparing an isolation layer 40 on the distributed bragg mirror layer 30; step D: preparing an absorption layer 50 on the separation layer 40, wherein the absorption layer 50 includes a bulk material having a three-dimensional spatial structure; step E: a dielectric film layer 60 is prepared on the absorber layer 50.
A third aspect of the present disclosure provides a picosecond fiber laser seed source comprising: a semiconductor saturable absorber mirror prepared by the present disclosure; a fiber focusing mirror configured to be disposed opposite the semiconductor saturable absorber mirror; a pump source; a wavelength division multiplexer configured to receive light output from the pump source and output; a gain fiber configured to receive light output from the wavelength division multiplexer and output the light; a fiber bragg grating configured to oscillate the light output from the gain fiber with the semiconductor saturable absorber mirror a plurality of times and output a target light; an optical fiber isolator configured to receive a target light and output; and the optical fiber jumper is configured to receive the target light output by the optical fiber isolator and emit the target light from the picosecond fiber laser seed source.
According to the embodiment of the disclosure, the tail fibers of the optical fiber focusing mirror, the pumping source, the wavelength division multiplexer, the gain optical fiber, the optical fiber Bragg grating, the optical fiber isolator and the optical fiber jumper are all polarization maintaining optical fibers; the gain fiber comprises a polarization-maintaining ytterbium-doped fiber.
According to an embodiment of the present disclosure, a fiber optic focusing mirror is disposed opposite a semiconductor saturable absorber mirror such that incident light and outgoing light of the semiconductor saturable absorber mirror are kept in a same line, and the fiber optic focusing mirror is configured such that the light is focused on the semiconductor saturable absorber mirror and then reflected back into an optical fiber.
(III) beneficial effects
(1) The method has the advantages that the bulk material is adopted to replace the strain multi-quantum well material to prepare the absorption layer of the semiconductor saturable absorption mirror, so that the consistency of the semiconductor saturable absorption mirror is improved, the interface slow-change problem caused by alternately growing different material layers by changing the growth conditions for multiple times is avoided, the stability is higher, the growth conditions are easier to control, and the problem of small tolerance of the growth process of the strain multi-quantum well material is solved; the semiconductor saturable absorber mirror can easily achieve narrower pulse widths with the same thickness of the absorber layer. Under the same modulation depth requirement, the whole thickness of the absorption layer is thinner, the growth time and the manufacturing cost are reduced, and the method can be used for mode locking of the picosecond fiber laser with high modulation depth.
(2) Through the dielectric film layer, the semiconductor saturable absorber mirror has a good protection effect, and is beneficial to improving the damage threshold of the semiconductor saturable absorber mirror. The saturation flux and the modulation depth can be regulated and controlled by designing the reflectivity of the dielectric film layer. The unsaturated losses can be reduced by increasing the reflectivity of the distributed bragg mirror.
(3) The semiconductor saturable absorber mirror prepared by the method is used as a self-starting mode locking device in the picosecond fiber laser seed source, and has better mode locking effect and more remarkable pulse narrowing effect.
Drawings
The foregoing and other objects, features and advantages of the disclosure will be more apparent from the following description of embodiments of the disclosure with reference to the accompanying drawings, in which:
FIG. 1 schematically illustrates a structural framework diagram of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure;
FIG. 2 schematically illustrates a structural schematic of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure;
FIG. 3 schematically illustrates a flow chart of a method of fabricating a semiconductor saturable absorber mirror according to an embodiment of the present disclosure;
FIG. 4 schematically illustrates photoluminescence spectra of a semiconductor saturable absorber mirror according to an embodiment of the disclosure;
FIG. 5 schematically illustrates a reflectance spectrum of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure;
FIG. 6 schematically illustrates a schematic diagram of a picosecond fiber laser seed source according to an embodiment of the disclosure;
FIG. 7 schematically illustrates a mode-locked pulse sequence diagram of a picosecond fiber laser seed source according to an embodiment of the disclosure;
FIG. 8 schematically illustrates an output spectral diagram of a picosecond fiber laser seed source according to an embodiment of the disclosure;
FIG. 9 schematically illustrates an autocorrelation graph of an output pulse of a picosecond fiber laser seed source in accordance with an embodiment of the present disclosure;
fig. 10 schematically illustrates a plot of output power of a picosecond fiber laser seed source according to an embodiment of the disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Where expressions like at least one of "A, B and C, etc. are used, the expressions should generally be interpreted in accordance with the meaning as commonly understood by those skilled in the art (e.g.," a system having at least one of A, B and C "shall include, but not be limited to, a system having a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.).
Fig. 1 schematically illustrates a structural framework diagram of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure.
As shown in fig. 1, in a first aspect of the present disclosure, there is provided a semiconductor saturable absorber mirror comprising: a substrate 10; a buffer layer 20 disposed on the substrate 10; a distributed bragg mirror layer 30 disposed on the buffer layer 20; an isolation layer 40 disposed on the distributed bragg mirror layer 30; an absorption layer 50 disposed on the isolation layer 40, the absorption layer 50 including a bulk material having a three-dimensional spatial structure; a dielectric film layer 60 disposed on the absorber layer 50.
In accordance with an embodiment of the present disclosure, the substrate 10 is used to provide support for a semiconductor saturable absorber mirror.
According to embodiments of the present disclosure, bulk material refers to a material having a three-dimensional spatial structure, which may be a uniform crystalline or amorphous substance.
According to embodiments of the present disclosure, increasing the thickness of the absorber layer 50 may enhance its nonlinear absorption of light and increase the change in reflectivity such that the modulation depth, which is the change in reflectivity when the pulse flux is much greater than the saturated absorption flux, is increased.
According to the embodiment of the disclosure, the consistency of the semiconductor saturable absorber mirror is improved by adopting the bulk material to prepare the absorber layer of the semiconductor saturable absorber mirror, the stability is higher, and the growth condition is easier to control; under the condition of the same thickness of the absorption layer, the semiconductor saturable absorption mirror can easily obtain narrower pulse width; the overall thickness of the absorber layer 50 is thinner, reducing growth time and manufacturing costs, for the same modulation depth requirements. Through the dielectric film layer, the semiconductor saturable absorber mirror has a good protection effect, and is beneficial to improving the damage threshold of the semiconductor saturable absorber mirror. The saturation flux and the modulation depth can be regulated and controlled by designing the reflectivity of the dielectric film layer. The unsaturated losses can be reduced by increasing the reflectivity of the distributed bragg mirror.
According to an embodiment of the present disclosure, the absorbent layer 50 is prepared from materials including: indium gallium arsenide, the composition of indium in absorber layer 50 is 0.2 to 0.3; the thickness of the absorption layer 50 is 70nm to 80nm; the growth temperature of the absorber layer 50 is 450 to 600 ℃.
According to an embodiment of the present disclosure, the bulk material may be indium gallium arsenide (InGaAs), but the present disclosure is not limited to the choice of bulk material, and one skilled in the art may choose according to actual needs.
According to embodiments of the present disclosure, absorber layer 50 is grown at a corresponding reduction of 150 ℃ relative to other layer materials, the reduction being for improving the quality of the deposited material, reducing internal defects and lattice stresses.
According to the embodiments of the present disclosure, the semiconductor saturable absorber mirror based on bulk material is modulated to a greater depth at the same thickness of the absorber layer, and a narrower pulse width is easily obtained. Under the same modulation depth requirement, the required thickness of the InGaAs bulk material is 70nm to 80nm, the whole thickness of the strain multi-quantum well material is 120nm to 1500nm, and the InGaAs bulk material is thinner than the strain multi-quantum well material, so that the growth time and the manufacturing cost are reduced, and the strain multi-quantum well material can be used for clamping a picosecond fiber laser with high modulation depth.
According to an embodiment of the present disclosure, the number of periods of the distributed bragg mirror layer 30 is 27 to 30, wherein the distributed bragg mirror layer 30 includes therein distributed bragg mirror units corresponding to the periods, the distributed bragg mirror units including: gallium arsenide sub-layer 31; and a gallium arsenide aluminum sub-layer 32 disposed on the gallium arsenide sub-layer 31; wherein the aluminum of the aluminum gallium arsenide sublayer 32 has a composition of 0.85 to 0.95; the optical thickness of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is 600 ℃ to 750 ℃.
According to an embodiment of the present disclosure, the thickness of the gallium arsenide (GaAs) sub-layer is less than the thickness of the gallium arsenide aluminum (AlGaAs) sub-layer 32.
According to embodiments of the present disclosure, the reflectivity of the DBR mirror 30 is positively correlated with the refractive index difference and the number of periods of the material used. For AlGaAs materials, the refractive index decreases with increasing Al composition, so that there is a larger refractive index difference between AlGaAs materials of high Al composition and GaAs materials, which is advantageous for obtaining high reflectivity with fewer cycles. However, an excessive Al component may make the AlGaAs material more easily oxidized, and in the embodiment of the present disclosure, the reflectivity of the prepared distributed bragg reflector layer 30 may reach more than 99.9% by adopting an Al component of 0.9%, so that the unsaturated loss of the semiconductor saturable absorber mirror may be reduced, but the selection of the preparation material of the distributed bragg reflector 30 is not limited, and a person skilled in the art may select according to actual needs.
According to an embodiment of the present disclosure, the number of periods of the dielectric film 60 is 1 to 4, wherein the dielectric film 60 includes a dielectric film unit corresponding to the period, and the dielectric film unit includes: silicon dioxide (SiO) 2 ) A sub-layer 61; silicon nitride (Si) 3 N 4 ) A sub-layer 62 disposed on the silicon dioxide sub-layer 61; wherein, the optical thickness of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 are respectively lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 is 250 ℃ to 300 ℃.
The selection of the materials for preparing the dielectric film layer 60 is not limited in accordance with the embodiments of the present disclosure, and may be selected by those skilled in the art according to actual needs.
According to the embodiment of the disclosure, the semiconductor saturable absorber mirror is well protected by the dielectric film layer, so that the damage threshold of the semiconductor saturable absorber mirror is improved. The saturation flux and the modulation depth can be regulated and controlled by designing the reflectivity of the dielectric film layer.
According to an embodiment of the present disclosure, the buffer layer 20 is a gallium arsenide material having a thickness of 0.5 μm to 2 μm.
The buffer layer 20 is used to improve the quality of the AlGaAs material in the bragg mirror layer 30 according to the embodiment of the present disclosure, but the present disclosure is not limited to the choice of the preparation material of the buffer layer 20, and a person skilled in the art may choose according to actual needs.
According to an embodiment of the present disclosure, a buffer layer 20 is disposed on a substrate (10) of a semiconductor saturable absorber mirror.
According to an embodiment of the present disclosure, spacer layer 40 is a gallium arsenide material having a thickness of 70nm to 75nm.
The selection of the material from which the isolation layer 40 is made is not limited in accordance with the embodiments of the present disclosure, and may be selected by those skilled in the art according to actual needs.
Fig. 2 schematically illustrates a structural schematic of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure.
The semiconductor saturable absorber mirror with the structure shown in fig. 2 improves the consistency of the semiconductor saturable absorber mirror through the absorber layer 50 prepared from bulk materials, avoids the interface slow-changing problem caused by alternately growing different material layers by changing the growth conditions for multiple times, has higher stability and easier control of the growth conditions, and solves the problem of small tolerance of the growth process of the strain multi-quantum well material; the semiconductor saturable absorber mirror can easily achieve narrower pulse widths with the same thickness of the absorber layer. Under the same modulation depth requirement, the whole thickness of the absorption layer is thinner, the growth time and the manufacturing cost are reduced, and the method can be used for mode locking of the picosecond fiber laser with high modulation depth. Through the dielectric film layer, the semiconductor saturable absorber mirror has a good protection effect, and is beneficial to improving the damage threshold of the semiconductor saturable absorber mirror. The saturation flux and the modulation depth can be regulated and controlled by designing the reflectivity of the dielectric film layer. The unsaturated losses can be reduced by increasing the reflectivity of the distributed bragg mirror.
FIG. 3 schematically illustrates a flow chart of a method of fabricating a semiconductor saturable absorber mirror according to an embodiment of the disclosure
A method of fabricating a semiconductor saturable absorber mirror as shown in fig. 3, comprising:
step A: a buffer layer 20 is prepared on the substrate 10.
According to the present disclosureIn the open example, arsine (AsH) was introduced into the reaction chamber 3 ) The substrate (10) of the semiconductor saturable absorber mirror is subjected to high temperature heat treatment to remove surface oxide layer, improve the quality of material deposited thereon, and after high temperature deoxidization treatment, the buffer layer 20 is deposited with a thickness of 500nm.
According to embodiments of the present disclosure, asH 3 The method is used in the semiconductor industry, such as N-type doping of epitaxial silicon, N-type diffusion in silicon, ion implantation, growing GaAs and forming compound semiconductors with certain elements, and also used in organic synthesis, scientific research or certain special experiments.
And (B) step (B): a distributed bragg mirror layer 30 is fabricated on the buffer layer 20.
According to an embodiment of the present disclosure, step B is configured to alternately grow 27 to 30 periods, wherein the distributed bragg mirror layer 30 includes therein distributed bragg mirror units corresponding to the periods, the distributed bragg mirror units including: gallium arsenide sub-layer 31; and a gallium arsenide aluminum sub-layer 32 disposed on the gallium arsenide sub-layer 31; wherein the aluminum of the aluminum gallium arsenide sublayer 32 has a composition of 0.85 to 0.95; the optical thickness of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the gallium arsenide sub-layer 31 and the gallium arsenide aluminum sub-layer 32 is 600 ℃ to 750 ℃. In the examples of the present disclosure, the growth temperature was kept at 690℃and was alternately grown for 30 cycles with thicknesses of 71.81nm and 85.26nm, respectively, wherein the composition of Al was 0.9.
Step C: an isolation layer 40 is prepared on the distributed bragg mirror layer 30.
According to an embodiment of the present disclosure, spacer layer 40 is a gallium arsenide material having a thickness of 70nm to 75nm. In the embodiments of the present disclosure, the deposition of the spacer layer 40 is performed by selecting the reaction temperature to be 690 deg.c, and the material used is GaAs material with a thickness of 71.8nm.
Step D: an absorbent layer 50 is prepared on the separation layer 40, wherein the absorbent layer 50 includes a bulk material having a three-dimensional spatial structure.
According to an embodiment of the present disclosure, the absorbent layer 50 is prepared from materials including: indium gallium arsenide, the composition of indium in absorber layer 50 is 0.2 to 0.3; the thickness of the absorption layer 50 is 70nm to 80nm; the growth temperature of the absorber layer 50 is 450 to 600 ℃. In embodiments of the present disclosure, after the isolation layer deposition is completed, the reaction chamber temperature is reduced to 530 ℃, and after it is stabilized, the growth of the absorber layer is performed. Using InGaAs bulk material, the growth thickness was 74nm, with an In composition of 0.25.
Step E: a dielectric film layer 60 is prepared on the absorber layer 50.
According to the embodiment of the disclosure, after the absorption layer is deposited, the temperature is reduced, nitrogen is introduced, and annealing is performed under the protection of the nitrogen. The annealed wafer is subjected to plasma enhanced chemical vapor deposition to grow a dielectric film layer 60.
According to an embodiment of the present disclosure, the number of periods of the dielectric film 60 is 1 to 4, wherein the dielectric film 60 includes a dielectric film unit corresponding to the period, and the dielectric film unit includes: a silicon dioxide sub-layer 61; and a silicon nitride sub-layer 62 disposed on the silicon dioxide sub-layer 61; wherein, the optical thickness of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 are respectively lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror; the growth temperature of the silicon dioxide sub-layer 61 and the silicon nitride sub-layer 62 is 250 ℃ to 300 ℃. In embodiments of the present disclosure, a growth temperature of 280 ℃ is selected, monosilane (SiH 4 ) And nitrous oxide (N) 2 O) introducing into the reaction chamber to perform SiO 2 Deposition of sub-layer 61 at a deposition rate of 1nm/s and a thickness of 178.8nm; siO (SiO) 2 After deposition of sub-layer 61 is completed, N 2 O is changed into ammonia (NH) 3 ) Introducing into a reaction chamber to perform Si 3 N 4 The deposition of the sub-layer 62 likewise takes place at a growth rate of 1nm/s and a thickness of 128.8nm.
According to the embodiment of the disclosure, the semiconductor saturable absorber mirrors prepared through the steps A to E are tested to obtain the semiconductor saturable absorber mirror with the modulation depth of 23%, the absorption rate of 30%, the unsaturated loss of 10% and the damage threshold of 2.5mJ/cm 2 The relaxation time was 10ps.
Fig. 4 schematically illustrates photoluminescence spectra of a semiconductor saturable absorber mirror according to an embodiment of the disclosure.
As shown in fig. 4, in this embodiment, the semiconductor saturable absorber mirror obtained by using the preparation method of the present disclosure has a minimum reflectance wavelength of 1030.8nm and a bandwidth of 102nm.
Fig. 5 schematically illustrates a reflectance spectrum of a semiconductor saturable absorber mirror according to an embodiment of the present disclosure.
As shown in fig. 5, the dashed line is a reflectivity curve obtained by computer simulation, the solid line is a reflectivity curve obtained by testing, and when the thickness and the composition of the distributed bragg reflector layer and the absorption layer deviate from preset values, the epitaxial growth parameters of the distributed bragg reflector layer and the absorption layer can be correspondingly adjusted, so that the semiconductor saturable absorption mirror meeting the requirements can be finally obtained, wherein the epitaxial growth parameters can be the material thickness and the growth temperature.
According to the embodiment of the disclosure, the semiconductor saturable absorber mirror obtained by the preparation method of the disclosure has stronger pulse narrowing capability under the same modulation depth, and narrower pulse width is easier to obtain.
A third aspect of the present disclosure provides a picosecond fiber laser seed source 600 comprising: a fiber focusing mirror 602 configured to be disposed opposite the semiconductor saturable absorber mirror 601; a pump source 604; a wavelength division multiplexer 603 configured to receive and output light output from the pump source 604; a gain fiber 605 configured to receive the light output from the wavelength division multiplexer 603 and output; a fiber bragg grating 606 configured to oscillate the light output from the gain fiber 605 a plurality of times with the semiconductor saturable absorber mirror 601 and output a target light; a fiber isolator 607 configured to receive the target light and output; the optical fiber jumper 608 is configured to receive the target light output by the optical fiber isolator 607 and emit the target light from the picosecond fiber laser seed source 600.
According to an embodiment of the present disclosure, the pigtails of the fiber focusing mirror 602, the pump source 604, the wavelength division multiplexer 603, the gain fiber 605, the fiber bragg grating 606, the fiber isolator 607 and the fiber jumper 608 are polarization maintaining fibers; the gain fiber 605 comprises a polarization maintaining ytterbium doped fiber.
According to an embodiment of the present disclosure, the fiber focusing mirror 602 is used to focus the light beam, and control the spot diameter of the output light beam within a certain range.
According to an embodiment of the present disclosure, the optical fiber focusing mirror 602 of the resonant cavity is disposed opposite to the semiconductor saturable absorber mirror 601 so that the incident light and the outgoing light of the semiconductor saturable absorber mirror 601 are kept in the same line, and the optical fiber focusing mirror 602 is configured to focus the light on the semiconductor saturable absorber mirror 601 and then reflect the light back into the optical fiber.
According to an embodiment of the present disclosure, the pump source 604 is used as an energy source to excite the gain medium in the picosecond fiber laser seed source, and pump the particles at a low energy level to a high energy level, so as to realize the population inversion.
According to an embodiment of the present disclosure, wavelength division multiplexer 603 (WDM, wavelength Division Multiplexing) is a device that couples light from a pump source into an optical path and prevents light in the optical path from reflecting back to the pump source.
According to embodiments of the present disclosure, the gain fiber 605 is a specialty fiber that incorporates trace rare earth elements (e.g., erbium, ytterbium, etc.) into the quartz glass matrix of conventional transmission fibers, the purpose of the rare earth elements being to facilitate the conversion of a passive transmission fiber into a gain fiber 605 having gain amplification capabilities.
According to the embodiment of the present disclosure, the fiber bragg grating 606 is a fiber bragg grating with uniform and consistent grating pitch, the reflection wavelength is very small, the distance between the reflection points of the fiber bragg grating 606 is always equal, the fiber bragg grating comprises countless reflection points capable of reflecting specific wavelengths, and by precisely matching the distance between the reflection points, the light with the wavelength conforming to the bragg condition can be reflected by the grating, while the other wavelengths are not substantially reflected.
According to embodiments of the present disclosure, the fiber optic isolator 607 is used to pass forward transmitted light and isolate reverse transmitted light, thereby avoiding reflected light from affecting the stability of the system.
According to an embodiment of the present disclosure, fiber optic jumper 608 is used to output light.
According to an embodiment of the present disclosure, the fiber focusing mirror 602, the pump source 604, the wavelength division multiplexer 603, the gain fiber 605, the fiber bragg grating 606, the fiber isolator 607, and the fiber jumper 608 are all connected by fusion-splicing using a polarization maintaining fiber fusion splicer.
According to the embodiment of the disclosure, the pump source 604 sends pump light to the wavelength division multiplexer 603, the wavelength division multiplexer 603 transmits the light to the gain fiber 605 for gain amplification, the amplified light is focused on the semiconductor saturable absorber mirror 601 through the fiber focusing mirror 602, after the pulse width of the light is reduced on the semiconductor saturable absorber mirror 601, the light is reflected back to the fiber focusing mirror 602 and is input to one end of the fiber bragg grating 606, the fiber bragg grating 606 performs wavelength screening on the received light, the selected light is reflected back to the semiconductor saturable absorber mirror 601 through the fiber focusing mirror 602 again, the light is subjected to multiple oscillations between the semiconductor saturable absorber mirror 601 and the fiber bragg grating 606 to obtain target light, and the target light is transmitted to the fiber isolator 607 through the other end of the fiber bragg grating 606 and then is transmitted to the fiber jumper 608 to output the target light.
Fig. 7 schematically illustrates a mode-locked pulse sequence diagram of a picosecond fiber laser seed source according to an embodiment of the disclosure.
Fig. 8 schematically illustrates an output spectral diagram of a picosecond fiber laser seed source according to an embodiment of the disclosure.
Fig. 9 schematically illustrates an autocorrelation graph of an output pulse of a picosecond fiber laser seed source in accordance with an embodiment of the present disclosure.
Fig. 10 schematically illustrates a plot of output power of a picosecond fiber laser seed source according to an embodiment of the disclosure.
According to the embodiment of the disclosure, the semiconductor saturable absorber mirror 601 is used in a picosecond fiber laser seed source, stable mode locking can be realized, and the spectral width of 0.2nm-0.8nm and the pulse output of 4ps-18ps pulse width can be realized by adjusting the modulation depth of the absorption layer of the semiconductor saturable absorber mirror 601 and the reflection bandwidth of the fiber Bragg grating 606; by compensating for intra-cavity dispersion through fiber Bragg grating 606, shorter pulse output can be achieved; adjusting the reflectivity of fiber bragg grating 606 and the saturation flux of semiconductor saturable absorber mirror 601 can regulate the output power and the optical-to-optical conversion efficiency. The repetition frequency of the output pulse kHz-MHz can be regulated and controlled by regulating the length of the optical fiber in the cavity. In this example, the test results are shown in fig. 7 to 10, and the center wavelength of the mode-locked pulse obtained by the test is 1030nm, the pulse width is 9ps, the 3db spectral width is 0.3nm, the repetition frequency is 27MHz, the maximum output power is 6.56mW, and the optical-optical conversion efficiency is 15.5%.
According to the embodiment of the disclosure, the picosecond fiber laser seed source using the semiconductor saturable absorber mirror 601 of the disclosure for mode locking has narrower pulse width and higher peak power, and further improves the performance of the picosecond fiber laser seed source 600.
Those skilled in the art will appreciate that the features recited in the various embodiments of the disclosure and/or in the claims may be provided in a variety of combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, the features recited in the various embodiments of the present disclosure and/or the claims may be variously combined and/or combined without departing from the spirit and teachings of the present disclosure. All such combinations and/or combinations fall within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (10)
1. A semiconductor saturable absorber mirror, comprising:
a substrate (10);
a buffer layer (20) disposed on the substrate (10);
-a distributed bragg mirror layer (30) disposed on the buffer layer (20);
an isolation layer (40) disposed on the distributed Bragg reflector layer (30);
an absorption layer (50) disposed on the isolation layer (40), the absorption layer (50) including a bulk material having a three-dimensional spatial structure;
and a dielectric film layer (60) disposed on the absorption layer (50).
2. The semiconductor saturable absorber mirror of claim 1, wherein,
the absorbent layer (50) is made of materials comprising: indium gallium arsenide, the composition of indium in the absorber layer (50) being 0.2 to 0.3;
the thickness of the absorption layer (50) is 70nm to 80nm;
the growth temperature of the absorption layer (50) is 450 ℃ to 600 ℃.
3. The semiconductor saturable absorber mirror of claim 1, wherein,
the number of periods of the distributed bragg mirror layer (30) is 27 to 30, wherein the distributed bragg mirror layer (30) comprises distributed bragg mirror units corresponding to the periods, and the distributed bragg mirror units comprise:
a gallium arsenide sub-layer (31); and
a gallium arsenide aluminum sub-layer (32) disposed on the gallium arsenide sub-layer (31);
wherein the aluminum of the gallium arsenide aluminum sub-layer (32) has a composition of 0.85 to 0.95;
the optical thickness of the gallium arsenide sub-layer (31) and the gallium arsenide aluminum sub-layer (32) is lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror;
the growth temperature of the gallium arsenide sub-layer (31) and the gallium arsenide aluminum sub-layer (32) is 600 ℃ to 750 ℃.
4. The semiconductor saturable absorber mirror of claim 1, wherein,
the number of cycles of the dielectric film layer (60) is 1 to 4, wherein the dielectric film layer (60) comprises dielectric film layer units corresponding to the cycles, and the dielectric film layer units comprise:
a silicon dioxide sub-layer (61); and
a silicon nitride sub-layer (62) disposed on the silicon dioxide sub-layer (61);
wherein the optical thickness of the silicon dioxide sub-layer (61) and the silicon nitride sub-layer (62) are respectively lambda/4, lambda represents the design value of the lowest reflectivity wavelength of the semiconductor saturable absorber mirror;
the growth temperature of the silicon dioxide sub-layer (61) and the silicon nitride sub-layer (62) is 250 ℃ to 300 ℃.
5. The semiconductor saturable absorber mirror of claim 1, wherein,
the buffer layer (20) is made of gallium arsenide material and has a thickness of 0.5-2 μm.
6. The semiconductor saturable absorber mirror of claim 1, wherein,
the isolation layer (40) is made of gallium arsenide material and has a thickness of 70nm to 75nm.
7. A method for producing a semiconductor saturable absorber mirror according to any one of claims 1 to 6, comprising:
step A: preparing a buffer layer (20) on a substrate (10);
and (B) step (B): preparing a distributed Bragg reflector layer (30) on the buffer layer (20);
step C: preparing an isolation layer (40) on the distributed Bragg reflector layer (30);
step D: preparing an absorbent layer (50) on the barrier layer (40), wherein the absorbent layer (50) comprises a bulk material having a three-dimensional spatial structure;
step E: a dielectric film layer (60) is prepared on the absorber layer (50).
8. A picosecond fiber laser seed source comprising:
a semiconductor saturable absorber mirror according to claims 1 to 6;
a fiber focusing mirror configured to be disposed opposite the semiconductor saturable absorber mirror;
a pump source;
a wavelength division multiplexer configured to receive light output from the pump source and output the light;
a gain fiber configured to receive light output from the wavelength division multiplexer and output the received light;
a fiber bragg grating configured to oscillate the light output from the gain fiber multiple times with the semiconductor saturable absorber mirror and output a target light;
an optical fiber isolator configured to receive a target light and output;
and the optical fiber jumper is configured to receive the target light output by the optical fiber isolator and emit the target light from the picosecond fiber laser seed source.
9. The picosecond fiber laser seed source of claim 8 wherein,
the tail fibers of the optical fiber focusing mirror, the pumping source, the wavelength division multiplexer, the gain optical fiber, the optical fiber Bragg grating, the optical fiber isolator and the optical fiber jumper are all polarization maintaining optical fibers;
the gain fiber comprises a polarization-maintaining ytterbium-doped fiber.
10. The picosecond fiber laser seed source of claim 8 wherein,
the optical fiber focusing mirror is arranged opposite to the semiconductor saturable absorber mirror, so that incident light and emergent light of the semiconductor saturable absorber mirror are kept in the same straight line, and the optical fiber focusing mirror is configured to focus the light on the semiconductor saturable absorber mirror and then reflect the light back into an optical fiber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311417333.XA CN117477336A (en) | 2023-10-30 | 2023-10-30 | Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311417333.XA CN117477336A (en) | 2023-10-30 | 2023-10-30 | Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117477336A true CN117477336A (en) | 2024-01-30 |
Family
ID=89630513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311417333.XA Pending CN117477336A (en) | 2023-10-30 | 2023-10-30 | Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117477336A (en) |
-
2023
- 2023-10-30 CN CN202311417333.XA patent/CN117477336A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA2200925C (en) | Saturable bragg reflector structure and process for fabricating the same | |
| US9059565B1 (en) | Ring cavity laser device | |
| Gomes et al. | Picosecond SESAM-based ytterbium mode-locked fiber lasers | |
| Kuznetsov et al. | Design and characteristics of high-power (> 0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/beams | |
| US7933300B2 (en) | Resonant fabry-perot semiconductor saturable absorbers and two photon absorption power limiters | |
| US5463649A (en) | Monolithically integrated solid state laser and waveguide using spin-on glass | |
| MXPA97003090A (en) | Bragg saturable reflector structure and processed to manufacture the mi | |
| JP2847006B2 (en) | Optical device | |
| JP3168246B2 (en) | Mode-locked laser device | |
| US5666373A (en) | Laser having a passive pulse modulator and method of making same | |
| US6960486B2 (en) | Mid-IR microchip laser: ZnS:Cr2+ laser with saturable absorber material | |
| US8179943B2 (en) | Semiconductor saturable absorber reflector and method to fabricate thereof | |
| US20030169797A1 (en) | Monolithically integrated mode-locked vertical cavity surface emitting laser (vcsel) | |
| US6826219B2 (en) | Semiconductor saturable absorber device, and laser | |
| Bellancourt et al. | Modelocked integrated external-cavity surface emitting laser | |
| Priante et al. | In-well pumping of a membrane external-cavity surface-emitting laser | |
| JP2004528705A (en) | Quantum dot laser | |
| Zhang et al. | Gold-reflector-based semiconductor saturable absorber mirror for femtosecond mode-locked Cr4+: YAG lasers | |
| Xiang et al. | Broadband semiconductor saturable absorber mirrors in the 1.55-/spl mu/m wavelength range for pulse generation in fiber lasers | |
| CN117477336A (en) | Semiconductor saturable absorber mirror, preparation method thereof and picosecond fiber laser seed source | |
| Lecomte et al. | Diode-pumped passively mode-locked Nd: YVO/sub 4/lasers with 40-GHz repetition rate | |
| US5384801A (en) | Power lasers with semiconductor filter | |
| Chartier et al. | High slope efficiency and low threshold in a diode pumped epitaxially grown Yb: YAG waveguide laser | |
| JP2005191074A (en) | Rare earth element-added semiconductor optical amplifier and optical switch | |
| Yong-Gang et al. | A Bragg-mirror-based semiconductor saturable absorption mirror at 800 nm with low temperature and surface state hybrid absorber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |