CN117477235A - Miniaturized energy selection surface based on tortuous structure - Google Patents
Miniaturized energy selection surface based on tortuous structure Download PDFInfo
- Publication number
- CN117477235A CN117477235A CN202311542396.8A CN202311542396A CN117477235A CN 117477235 A CN117477235 A CN 117477235A CN 202311542396 A CN202311542396 A CN 202311542396A CN 117477235 A CN117477235 A CN 117477235A
- Authority
- CN
- China
- Prior art keywords
- electromagnetic response
- layer
- electromagnetic
- surface based
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004044 response Effects 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 238000005452 bending Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 241000607734 Yersinia <bacteria> Species 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000010287 polarization Effects 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 230000000737 periodic effect Effects 0.000 description 16
- 238000003780 insertion Methods 0.000 description 10
- 230000037431 insertion Effects 0.000 description 10
- 238000004088 simulation Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000004891 communication Methods 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
Landscapes
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention relates to a miniaturized energy selection surface based on a zigzag structure, and belongs to the field of electromagnetic protection design. The top layer electromagnetic response structure, the first medium substrate, the middle connecting layer structure, the second medium substrate and the bottom layer electromagnetic response structure are sequentially pressed together, the first medium substrate and the second medium substrate are square plate bodies with consistent outline dimensions, and the top layer electromagnetic response structure is consistent with the bottom layer electromagnetic response structure. The invention has the advantages that the PIN diode is utilized to realize the energy selection characteristic of sensing the incident electromagnetic wave, the working state of the PIN diode can be adaptively changed aiming at the space field intensity, and the PIN diode can adaptively shield strong electromagnetic pulse while the normal working signal is not influenced; the multi-layer cascade structure is used for expanding the protection bandwidth, improving the protection performance, increasing the equivalent capacitance and the equivalent inductance in the equivalent circuit by using the zigzag structure, improving the miniaturization degree, and realizing the reduction of the cell size and insensitivity to the changes of the incident angle and the polarization state of the electromagnetic wave.
Description
Technical Field
The invention belongs to the field of electromagnetic protection design, and particularly relates to a miniaturized energy selection surface based on a zigzag structure, which is suitable for strong electromagnetic pulse protection of communication equipment.
Background
In recent years, the rapid development of electronic science and technology makes communication equipment in modern war gradually tend to be intelligent and integrated, and the performance is greatly improved; on the other hand, the sensitivity of the device to electromagnetic attack is improved greatly, and the device is extremely easy to be damaged irreversibly. Meanwhile, as electromagnetic pulse weapons develop to high maneuverability, pulse waveform adjustability, wide frequency band and high power, electromagnetic pulse threats to communication equipment are also increasing. Therefore, in order to reduce the damage caused when the communication equipment is attacked by electromagnetic pulse in military war, effective strong electromagnetic pulse protection measures are required.
At present, the traditional electromagnetic compatibility design and the strong electromagnetic pulse suppression method mainly adopt a 'back door' suppression means such as filtering, shielding, grounding and the like, and the research is relatively intensive. The research on the suppression means of the front door is insufficient, and a high-power amplitude limiter is mainly added in a front-end circuit at present, and the high-power attenuator can greatly attenuate the current flowing into the circuit, but can influence the passing of normal signals while meeting the requirement of greatly attenuating signals; in addition, a filter or a frequency selective surface (Frequency Selective Surface, FSS) is added at the front end, so that the out-of-band high-power signal can be isolated, but the working state of the device cannot be adaptively changed according to the change of electromagnetic environment, and the strong electromagnetic pulse with the frequency in the passband cannot be effectively restrained.
The energy selection surface (Energy Selective Surface, ESS) allows electromagnetic waves having an energy less than a safety threshold to pass through while attenuating strong electromagnetic pulses having an energy greater than the safety threshold. The energy selection surface is formed by a periodic structure of the FSS and PIN diodes attached to the periodic structure on the basis of the FSS. The working principle is that when the high-power microwave is irradiated by the high-energy electromagnetic wave, the high voltage induced on the energy selection surface changes the energy selection surface from a high-resistance state to a low-resistance state rapidly by utilizing the strong electric field effect of the high-power microwave and the voltage-controlled conductive characteristic of the semiconductor, so that the high-energy electromagnetic wave is attenuated and the shielding effect is realized; when the small-energy electromagnetic wave is irradiated to the energy selection surface, the voltage induced on the energy selection surface is small, and the energy selection surface cannot be converted from the high-resistance state to the low-resistance state, so that the small-energy electromagnetic wave can be allowed to pass smoothly. The energy selection surface changes the surface impedance of the structure by utilizing the on-off state of the PIN diode, so that the transmission characteristic of the energy selection surface to electromagnetic waves is changed, and the aim of protecting an electronic equipment system from being damaged by high-power microwaves is fulfilled. Patent document CN116171034B proposes a C-band broadband energy selection surface that achieves adaptive protection against electromagnetic energy by loading switching diodes and aggregate capacitance between periodic structures. Patent document publication No. CN115458948A proposes a high-frequency ultra-wideband energy selection surface, which achieves broadband protection by adopting a multi-layer cascade structure.
However, the energy selecting surfaces proposed by the above patent are all applied to the high frequency band, when the energy selecting surfaces are used in the low frequency band, the problems of oversized size and high profile exist, so that the number of periodic units distributed in a limited space is reduced, when the energy selecting surfaces are used in special environments such as a non-plane wave irradiation area and a part with high tortuosity, the problems of forward grating lobes, high conformal difficulty of curved surface structures and the like are generated, the transmission performance of the energy selecting surfaces is influenced while the angle and polarization stability are poor. Therefore, when the energy selection surface applied to the low-frequency band strong electromagnetic pulse protection is designed, the unit structure size of the energy selection surface should be reduced as much as possible.
Disclosure of Invention
The invention provides a miniaturized energy selection surface based on a zigzag structure, which aims to solve the problem of insufficient miniaturization degree of the energy selection surface in a low frequency band.
The technical scheme adopted by the invention is that the electromagnetic response structure comprises five layers of structures, namely a top electromagnetic response structure, a first dielectric substrate, a middle connecting layer structure, a second dielectric substrate and a bottom electromagnetic response structure, from top to bottom, wherein the first dielectric substrate and the second dielectric substrate are square plate bodies with consistent external dimensions, the top electromagnetic response structure is completely consistent with the bottom electromagnetic response structure, and the five layers of structures are sequentially pressed together.
The top-layer electromagnetic response structure comprises top-layer electromagnetic response components and top-layer diodes, wherein the top-layer electromagnetic response components are arranged periodically, the top-layer diodes are loaded between the top-layer electromagnetic response components in a mutually orthogonal mode, the main structure of the top-layer electromagnetic response components is obtained by bending a typical Yersinia cooling structure, and the structure of the typical Yersinia cooling structure after bending is symmetrical about the center of the unit.
The zigzag line in the main body structure of the top electromagnetic response component is made of copper.
The top layer diode adopts a PIN diode.
The intermediate connecting layer structure comprises intermediate connecting layer response components which are arranged periodically, and the main body structure is obtained by bending a square ring structure.
The first dielectric substrate and the second dielectric substrate are made of the same material and are high-frequency circuit boards.
When a low-energy signal below 10kv/m is incident, the diode is in an off state because the voltage induced on the metal wire is lower than the threshold value of the conduction of the diode in the top-layer electromagnetic response structure and the bottom-layer electromagnetic response structure.
When a high-energy signal of more than 10kv/m acts on the energy selection surface, the induced voltage on two sides of the diode in the top electromagnetic response structure and the bottom electromagnetic response structure is far greater than a threshold value of conduction, and the diode is in a conduction state.
The invention has the advantages that:
1. the PIN diode is utilized to realize the energy selection characteristic of sensing electromagnetic energy, the working state of the PIN diode can be changed according to the space field intensity in a self-adaptive manner, the normal working signal is not influenced, meanwhile, the self-adaptive shielding strong electromagnetic pulse is adopted, the safety of electronic equipment is protected, the protection bandwidth is expanded by using the multi-layer cascade structure, and the protection performance is improved.
2. The resonant unit is formed by using the meandering metal strips, so that the length of the metal wire can be increased under the condition that the size of the unit is unchanged, the current path is increased, and the purpose of increasing the equivalent inductance is realized; meanwhile, the bending treatment also makes the coupling gap between adjacent metal wires smaller and increases the equivalent capacitance, and the structure makes the resonant unit have smaller periodic unit size and have good stability for transverse electric waves (TE waves) and transverse magnetic waves (TM waves) in the range of changing the incident angle from 0 DEG to 60 deg.
Drawings
FIG. 1 is an exploded view of the present invention;
FIG. 2 is a schematic diagram of a typical Yersinia cold construction tortuous process of the present invention;
FIG. 3 is a schematic diagram of a zigzag processing of the square ring structure of the present invention;
FIG. 4 is a schematic structural view of the top-level electromagnetic response structure of the present invention;
FIG. 5 is a schematic structural view of an intermediate link layer structure of the present invention;
fig. 6 is an equivalent circuit diagram of the PIN diode of the present invention when turned off and on;
fig. 7 is a graph of insertion loss and shielding effectiveness of the present invention;
FIG. 8 is an equivalent circuit diagram of the present invention;
fig. 9 is a microstrip line equivalent circuit diagram of the present invention;
FIG. 10 is a graph of the equivalent circuit of the present invention versus the results of a full wave simulation (insertion loss);
FIG. 11 is a graph of the equivalent circuit of the present invention versus the results of a full wave simulation (shielding effectiveness);
FIG. 12 is a graph of simulation results of insertion loss of a miniaturized energy selective surface at different angles of incidence for transverse electric waves (TE waves) of the present invention;
FIG. 13 is a graph of simulation results of insertion loss of a miniaturized energy selective surface at different angles of incidence for transverse magnetic waves (TM waves) of the present invention;
FIG. 14 is a graph showing simulation results of shielding effectiveness of a miniaturized energy selective surface at different angles of incidence under transverse electric waves (TE waves) of the present invention;
fig. 15 is a graph showing the results of simulation of the shielding effectiveness of a miniaturized energy selective surface at different angles of incidence for transverse magnetic waves (TM waves) of the present invention.
Detailed Description
Specific embodiments of the present invention will now be described in order to provide a clearer understanding of the technical features, objects and effects of the present invention. It should be understood that the particular embodiments described herein are illustrative only and are not intended to limit the invention, i.e., the embodiments described are merely some, but not all, of the embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without making any inventive effort, are intended to be within the scope of the present invention.
As shown in fig. 1, the electromagnetic response structure comprises five layers of structures, namely a top electromagnetic response structure 1, a first dielectric substrate 2, a middle connecting layer structure 3, a second dielectric substrate 4 and a bottom electromagnetic response structure 5 from top to bottom, wherein the first dielectric substrate 2 and the second dielectric substrate 4 are square plate bodies with consistent external dimensions, the top electromagnetic response structure 1 and the bottom electromagnetic response structure 5 are completely consistent, and the five layers of structures are sequentially pressed together.
As shown in fig. 2, the top-layer electromagnetic response structure 1 includes top-layer electromagnetic response components 101 and top-layer diodes 102, where the top-layer electromagnetic response components 101 are periodically arranged, and the top-layer diodes 102 are loaded between the top-layer electromagnetic response components 101 in a mutually orthogonal manner to realize adaptive protection against strong electromagnetic pulses, and the main structure of the top-layer electromagnetic response component 101 is obtained by a typical yersicolor structure after being subjected to a meandering process, the typical yersicolor structure after being subjected to the meandering process is symmetrical about the center of the unit, and the horizontal meander lines can be obtained by rotating the vertical meander lines by 90 °, so as to simplify the complexity of the unit.
The meander line in the main structure of the top electromagnetic response module 101 is made of copper.
The top layer diode 102 employs a PIN diode.
As shown in fig. 3, the intermediate connecting layer structure 3 includes intermediate connecting layer response components 301 arranged periodically, and the main structure is obtained by bending a square ring structure.
The materials adopted by the first dielectric substrate 2 and the second dielectric substrate 4 are the same, and are high-frequency circuit boards.
When a low-energy signal below 10kv/m is incident, the diode is in an off state because the voltage induced on the metal wire is lower than the threshold value of the conduction of the diode in the top-layer electromagnetic response structure and the bottom-layer electromagnetic response structure.
When a high-energy signal of more than 10kv/m acts on the energy selection surface, the induced voltage on two sides of the diode in the top electromagnetic response structure and the bottom electromagnetic response structure is far greater than a threshold value of conduction, and the diode is in a conduction state.
The invention is further illustrated by the following examples.
As shown in fig. 1, the top-layer electromagnetic response structure 1 contains 2×2 top-layer electromagnetic response components 101, and is arranged periodically, as shown in fig. 2, the main structure is obtained by a typical jersey cooling structure through a plurality of zigzag processes, the center of the structure is symmetrical about the unit, the horizontal zigzag lines can be obtained by rotating the vertical zigzag lines by 90 degrees, the complexity of the structure unit is simplified, and the top-layer diodes 102 are semiconductor diodes with switching characteristics and are loaded between the main structures of the top-layer components in a mutually orthogonal mode so as to realize self-adaptive protection against strong electromagnetic pulses.
In this embodiment, the first dielectric substrate 2 and the second dielectric substrate 4 are square plate bodies with identical external dimensions; as shown in fig. 1, the thicknesses of the first dielectric substrate 2 and the second dielectric substrate 4 are both h.
The intermediate connecting layer structure 3 contains 2×2 intermediate connecting layer response components 301, and is arranged periodically, as shown in fig. 3, and the main structure of the intermediate connecting layer response component 301 is obtained by performing multiple meandering processing on a square ring structure.
Top layerThe diode and the bottom layer diode are semiconductor diodes with the same type and the switching characteristic, and the PIN diode with the type BAP70-03 can be replaced by other semiconductor diodes with the switching characteristic. The PIN diode is directly conducted by utilizing the voltage induced on the metal strip in a self-adaptive way without externally applying bias voltage or a feeder line network. As shown in FIG. 6, when the power of the incident wave is low, the induced voltage across the PIN diode is smaller than the on threshold, the diode is turned off, the working signal can normally pass, and the PIN diode can be equivalent to an inductor L on And a resistor R on Is a series circuit of (a) and (b); when high-power microwave irradiates the energy selection surface, the induced voltage at two sides of the PIN diode exceeds the threshold to lead the diode to be conducted, the surface forms a metal grid or grid structure to shield electromagnetic waves, and the PIN diode can be equivalent to a capacitor C off 。
When the equivalent capacitance and the equivalent inductance in the equivalent circuit of the energy selection surface become large, the center resonance frequency of the energy selection surface may decrease. Based on the method, the periodic unit structure of the energy selection surface is subjected to meandering treatment, so that the length of the metal wire can be increased under the condition that the unit size is unchanged, the current path is increased, and the purpose of increasing the equivalent inductance is realized; and simultaneously, the bending treatment also enables the coupling gap between adjacent metal wires to be smaller, and the equivalent capacitance is increased. The simultaneous increase of the equivalent capacitance and the equivalent inductance causes the center frequency to decrease and move toward a low frequency, while the center frequency can be increased like the high frequency movement by reducing the cycle size of the energy selection surface, so the meandering process can achieve the purpose of miniaturizing the energy selection surface.
As shown in FIG. 4, the outer periphery of the structure after the typical Yersie cold structure is bent is E, the metal bent line is made of copper, and the metal bent line width w 1 And gap width w 2 The same, the spacing between adjacent structural units is L 1 。
As shown in FIG. 5, the outer periphery of the structure after the bending treatment of the square frame structure is H, the metal bending line is made of copper, and the bending line width is w 3 The width of the gap between adjacent curves is w 4 . The depth of the long groove in the zigzag square ring is F, the depth of the short groove is G, and the distance between adjacent structural units is L 2 . The specific parameters in the examples are shown in table 1.
Table 1 structural parameters (Unit: mm)
Referring to fig. 1, the first dielectric substrate and the second dielectric substrate are square plate bodies with uniform dimensions. The thicknesses of the first dielectric substrate and the second dielectric substrate meet h=0.75mm, and the first dielectric substrate and the second dielectric substrate serve as substrate materials to play a role of structural support, and meanwhile the top electromagnetic response structure, the middle layer structure and the bottom electromagnetic response structure are mutually spaced. The two dielectric substrates are made of the same material and are high-frequency circuit boards, and the size of each dielectric substrate is the same as the periodic size of the energy selection surface unit.
According to the invention, electromagnetic coupling exists between the three layers of metal structures, PIN diodes are loaded in the horizontal direction and the vertical direction, and strong electromagnetic pulses incident in different directions can be effectively protected. The effectiveness of the invention is illustrated by the simulation of the energy selection surface in the electromagnetic simulation software CST. The performance parameters of the energy selection surface in the incidence of the low-energy signal and the high-energy signal are shown in fig. 7, and it can be seen that when the low-energy signal (the signal below 10 kv/m) is incident, the voltage induced on the metal wire is lower than the threshold value of conducting the PIN diode, the diode is cut off, and the periodic structure can generate resonance phenomenon under a specific wavelength, so that the energy selection surface generates a frequency band for the low-loss passing of the signal. At this time, the energy selection surface is in a wave-transmitting mode, and the bandwidth with the L frequency band insertion loss smaller than 1dB is more than 770 MHz; when a high-energy signal (a signal above 10 kv/m) acts on the energy selection surface, the induced voltage at two sides of the PIN diode is far greater than a threshold value of conduction, the diode is in a conduction state, adjacent unit structures are connected together to form a metal grid capable of conducting so that the surface wave impedance is reduced, the energy selection surface is converted into a protection mode, and in-band signals are shielded outside the energy selection surface, so that a later-stage circuit is protected. It can be seen that the shielding effectiveness of the energy selection surface at the center resonant frequency can be above 40dB, the 10dB guard bandwidth is above 750MHz, and the relative bandwidth is above 50%.
Lambda in formula (1) is the wavelength of the incident wave, f is the frequency of the incident wave, P is the periodic cell size of the energy selection surface, d 1 The length of the metal wire for generating current due to excitation for the main structure of the top electromagnetic response component can be obtained by the formula (2):
d 1 ＝12E-72w 1 -60w 2 (2)
equivalent capacitance C in equivalent circuit 1 The value can be obtained from the formula (3):
wherein:
equivalent inductance L in equivalent circuit 1 The value can be obtained from the formula (5):
d in the formula 2 The length of the metal wire for generating current due to excitation for the main structure of the intermediate connection layer electromagnetic response component can be obtained by the formula (6):
d 2 ＝H+2F+4G (6)
equivalent capacitance C in equivalent circuit 2 The value can be obtained from formula (7):
in order to better understand the invention, the working principle of the electromagnetic equivalent circuit theory is utilized to analyze. The current distribution and the field distribution within each periodic cell structure are the same, and if the distribution of the near field is ignored, the propagation of electromagnetic waves in space can be equivalent to the transmission of voltage and current on a lossless transmission line. When an electric field is applied to the periodic unit, because of the induced electric potential difference between adjacent metal meander lines, electric energy can be stored as a capacitor, and the effect can be equivalent to a capacitor; the electric current generated by the excitation of the electric charge on the metal meander line can form a magnetic field, so that magnetic energy can be stored as the magnetic energy of the inductor, and the effect of the magnetic energy can be equivalent to the inductance. From the above, an equivalent circuit diagram as shown in fig. 8 is obtained. The main structure of the top electromagnetic response component can be equivalent to the equivalent inductance L 1 And equivalent capacitance C 1 The PIN diode is loaded between the main body structures of the top-layer electromagnetic response component, so the PIN diode and the C in the equivalent circuit 1 Is a parallel relationship. The main structure of the intermediate connecting layer can be equivalent to L 2 And equivalent capacitance C 2 Is a series of (a) and (b). The main structure of the bottom electromagnetic response component can be equivalent to the equivalent inductance L 3 And equivalent capacitance C 3 The PIN diode is loaded between the main structures of the bottom electromagnetic response component, so the PIN diode and C in the equivalent circuit 3 Is a parallel relationship.
Equivalent inductance L in equivalent circuit 1 The expression (1) can be used to obtain:
the F function in the above equation can be defined by equation (8):
because the main structure of the top layer component in the energy selection surface is identical to the main structure of the bottom layer in structure and size, the inductance L in the equivalent circuit 1 And inductance L 2 Equal in value, capacitance C 1 And capacitor C 2 Is equal in value.
The first dielectric substrate and the second dielectric substrate of the energy selection surface can be respectively equivalent to a section of characteristic impedance Z d Wherein Z is d The expression (9) can be used to obtain:
the length l of the transmission line is the same as the thickness h of the dielectric substrate, so the transmission line can be approximately equivalent to a parallel capacitor C d And series inductance L d ，C d Can be obtained from formula (10), L d The expression (11) can be used to obtain:
C d ＝ε o ε r h/2 (10)
L d ＝μ 0 μ r h (11)
wherein ε is r Sum mu r Dielectric constant and permeability, ε, of dielectric substrate material, respectively 0 Sum mu 0 The permittivity and permeability are vacuum respectively. In analyzing the equivalent circuit, a circuit model of the PIN diode shown in fig. 6 is used when it is turned on and off.
An equivalent circuit is built in the simulation software ADS. And comparing the result obtained by using the equivalent circuit simulation with the result of the full-wave simulation. It can be seen from fig. 10 and fig. 11 that the calculation results obtained by the two methods have good consistency, the insertion loss is basically consistent with the curve of shielding effectiveness, the center resonance frequency is consistent, and the energy selection surface provided by the invention has good protection performance and wave transmission performance from the circuit point of view while verifying the correctness of the equivalent circuit model. And it can be seen from the equivalent circuit that the energy selection surfaces interact mainly through transmission line coupling, so that the multi-layer cascade structure exhibits in-band ripple and edge dip characteristics similar to those of high order filters.
In practical engineering applications of energy selective surfaces, the polarization mode of the incident wave source is unknown in many cases, and the application often involves a curved surface, and the incident angle range of the electromagnetic wave is large. When the incidence angle is changed, the protection bandwidth and the central resonance frequency of the periodic structure are also changed, and when transverse electric waves (TE waves) are incident to the periodic structure of the metal patch, the bandwidth of the transmission coefficient of the periodic structure is increased in proportion to sec theta along with the increase of the incidence angle; when a transverse magnetic wave (TM wave) is incident, the bandwidth decreases in proportion to cos θ as the angle of incidence increases. Therefore, it is necessary to check polarization and angular stability of the energy selective surface
The incident angles of electromagnetic waves in TE and TM modes are changed from 0 DEG to 60 DEG at 15 DEG intervals, and the change of the insertion loss and the shielding energy of the energy selection surface under the conditions of different polarization and different incident angles is simulated. As a result, as shown in fig. 12, 13, 14 and 15, the energy selection surface has good polarization stability in both TE and TM polarization modes due to the use of the centrally symmetric periodic structure of the present invention. For TE mode electromagnetic wave, when the incident angle is increased from 0 degree to 60 degrees, the insertion loss is gradually increased, the shielding efficiency is gradually increased, the corresponding-10 dB protection bandwidth is gradually widened, the center resonance frequency is shifted to a high frequency, but the maximum shift amount is only 0.09%; for TM mode electromagnetic waves, when in the range of 0 ° to 60 °, the insertion loss increases with increasing angle, the shielding effectiveness decreases, the 10dB bandwidth also gradually decreases, and the center resonance frequency hardly changes. However, in general, the energy selective surface in both TE and TM modes maintains good angular stability at an incident angle of not more than 60 °, which is an advantage of miniaturization of the periodic cell size.
In summary, the miniaturized energy selection surface based on the zigzag structure provided by the invention realizes the energy selection characteristic of sensing the incident electromagnetic wave by utilizing the PIN diode, can adaptively change the working state of the surface according to the space field intensity, adaptively shield strong electromagnetic pulse while not affecting normal working signals, and protect the safety of electronic equipment; the multi-layer cascade structure is used for expanding the protection bandwidth and improving the protection performance; the unit equivalent capacitance and the equivalent inductance are increased by utilizing the zigzag structure, the miniaturization degree of the energy selection surface is improved, and the small size of the unit and insensitivity to the changes of the incident angle and the polarization state of electromagnetic waves are realized. The performance of the energy selection surface provided by the invention is analyzed through CST simulation and an equivalent circuit method, and the result shows that the energy selection surface has the advantages of compact size, high shielding efficiency, low insertion loss, bandwidth resistance, wide incident wave angle and the like.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (8)
1. A miniaturized energy selective surface based on a tortuous structure, characterized by: the structure comprises five layers of structures, namely a top electromagnetic response structure, a first medium substrate, a middle connecting layer structure, a second medium substrate and a bottom electromagnetic response structure from top to bottom in sequence, wherein the first medium substrate and the second medium substrate are square plate bodies with consistent overall dimensions, the top electromagnetic response structure and the bottom electromagnetic response structure are completely consistent, and the five layers of structures are sequentially pressed together.
2. A miniaturized energy selective surface based on a meandering structure according to claim 1, wherein: the top-layer electromagnetic response structure comprises top-layer electromagnetic response components and top-layer diodes, wherein the top-layer electromagnetic response components are arranged periodically, the top-layer diodes are loaded between the top-layer electromagnetic response components in a mutually orthogonal mode, the main structure of the top-layer electromagnetic response components is obtained by bending a typical Yersinia cooling structure, and the structure of the typical Yersinia cooling structure after bending is symmetrical about the center of the unit.
3. A miniaturized energy selective surface based on a meandering structure according to claim 2, wherein: the zigzag line in the main body structure of the top electromagnetic response component is made of copper.
4. A miniaturized energy selective surface based on a meandering structure according to claim 2, wherein: the top layer diode adopts a PIN diode.
5. A miniaturized energy selective surface based on a meandering structure according to claim 1, wherein: the intermediate connecting layer structure comprises intermediate connecting layer response components which are periodically arranged, and the main body structure is obtained by bending the square ring structure.
6. A miniaturized energy selective surface based on a meandering structure according to claim 1, wherein: the first dielectric substrate and the second dielectric substrate are made of the same material and are high-frequency circuit boards.
7. A miniaturized energy selective surface based on a meandering structure according to claim 1, wherein: when a low-energy signal below 10kv/m is incident, the diode is in an off state because the voltage induced on the metal wire is lower than the threshold value of the conduction of the diode in the top-layer electromagnetic response structure and the bottom-layer electromagnetic response structure.
8. A miniaturized energy selective surface based on a meandering structure according to claim 1, wherein: when a high-energy signal of more than 10kv/m acts on the energy selection surface, the induced voltage on two sides of the diode in the top electromagnetic response structure and the bottom electromagnetic response structure is far greater than a threshold value of conduction, and the diode is in a conduction state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311542396.8A CN117477235A (en) | 2023-11-18 | 2023-11-18 | Miniaturized energy selection surface based on tortuous structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311542396.8A CN117477235A (en) | 2023-11-18 | 2023-11-18 | Miniaturized energy selection surface based on tortuous structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117477235A true CN117477235A (en) | 2024-01-30 |
Family
ID=89629242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311542396.8A Pending CN117477235A (en) | 2023-11-18 | 2023-11-18 | Miniaturized energy selection surface based on tortuous structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117477235A (en) |
-
2023
- 2023-11-18 CN CN202311542396.8A patent/CN117477235A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109451718B (en) | Ultra-wideband energy selection surface | |
| CN112117546B (en) | C-band ultra-wideband energy selection surface | |
| CN102437399B (en) | High-power microwave impulse shield | |
| CN110265788B (en) | Novel two-three-dimensional combined dual-polarized band-pass radar wave absorber | |
| CN113410651B (en) | Broadband high-power microwave self-adaptive protection device | |
| CN114267958A (en) | Low-pass absorption type frequency selection structure with narrow transition band | |
| CN117477235A (en) | Miniaturized energy selection surface based on tortuous structure | |
| Wu et al. | Waveguide energy-selection-filter switch array | |
| Huang et al. | Self-switchable broadband waveguide protector against high power microwave | |
| Shah et al. | A flexible and ultrathin FSS for EM shielding applications | |
| US5394150A (en) | Broad-band radio wave absorber | |
| Wang et al. | A miniaturized self-actuated bandpass protection structure based on energy low-pass mechanism | |
| Shah et al. | A miniaturized fss based band-stop filter for emi shielding applications | |
| CN106617370A (en) | Electromagnetic pulse protection invisible cloak with oval structure | |
| CN109167180B (en) | Spatial polarization filter | |
| CN116565574A (en) | Low profile energy selective surface with ultra wideband protection | |
| CN106900167B (en) | The stealthy cape of the Spark gap of cylindrical structure based on equivalent circuit | |
| Wang et al. | A design method of ultra-wideband self-reconfigurable electromagnetic pulse protection surface | |
| CN217641793U (en) | Electromagnetic structure with wave-absorbing and wave-transmitting band wave-shape protection functions on two sides | |
| Huang et al. | A Design of Pluggable High Power Microwave Protection Device in Waveguide | |
| Lu et al. | Surface simulation and design of C-band energy selective surface | |
| Yadav et al. | A frequency selective surface for 2.25 GHz, WiMax and WLAN applications | |
| CN108736167B (en) | Novel three-dimensional wide-stop-band low-pass frequency selection structure | |
| CN113381200B (en) | Electromagnetic absorption structure with wide incident angle | |
| Burkholder | FEKO™ analysis of surface treatments for mitigating the EM coupling between conformal antennas |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |