CN117460273A - Phototransistor array based on polymer semiconductor/photosensitive quantum dot - Google Patents
Phototransistor array based on polymer semiconductor/photosensitive quantum dot Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/30—Devices controlled by radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
Abstract
The invention provides a phototransistor array based on polymer semiconductor/photosensitive quantum dots, comprising: a substrate and a plurality of phototransistors disposed on the substrate, each phototransistor comprising: a gate electrode disposed on the substrate; an insulating layer disposed over the gate electrode; the source electrode and the drain electrode are arranged above the insulating layer; a photosensitive layer disposed on the insulating layer and the source/drain electrodes; the carrier transmission layer is arranged above the photosensitive layer, wherein the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer are all patterned through a photoetching method, and each pattern of the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer which are positioned at the same position on the insulating layer, the insulating layer below and the gate electrode form a photoelectric transistor, and all the photoelectric transistors form a photoelectric transistor array. The invention also provides a preparation method of the photoelectric transistor array, and the prepared photoelectric transistor array has better photosensitivity and consistency and can simulate the basic behavior of biological synapses under the stimulation of optical signals.
Description
Technical Field
The invention belongs to the technical field of transistors, and particularly relates to a photoelectric transistor array based on a polymer semiconductor/photosensitive quantum dot and a preparation method thereof.
Background
In recent years, organic electronic devices mainly composed of organic semiconductor materials have been rapidly developed. Unlike the covalent bond connection between inorganic semiconductors, the organic semiconductor molecules are combined together by weak intermolecular forces such as van der Waals forces, which brings the advantages of being processable by a solution method, being capable of preparing flexible devices, and the like to the organic semiconductor. In the process of fabricating an organic electronic device, although the solution process can prepare an organic semiconductor thin film over a large area, in the continuous solution process, the solution of the second layer is easy to dissolve the first layer thin film, and thus it is difficult to construct a planar heterojunction-based device by the continuous solution process. In practical application of electronic devices, a plurality of devices are often required to cooperate, so that a plurality of devices are required to be prepared on the same substrate to form a device array, and therefore, the array is the basis for practical and multifunctional electronic devices. The photoetching technology is one of important technologies for the array of electronic devices, and the electronic device array prepared by using the photoetching technology has the advantages of high precision, flexible pattern design, mass production and the like. However, since the organic semiconductor film is susceptible to solvent attack, the development process in the photolithography process may cause structural damage to the semiconductor film, making it difficult to directly apply the photolithography process to the preparation of an organic electronic device.
A photo-responsive device is a type of device that absorbs an optical signal through a photosensitive material and converts it into an electrical signal, and a phototransistor is a three-terminal structure photo-responsive device. Currently, various high performance phototransistor devices have been fabricated by strategies in terms of material selection, structural design, and the like. However, most of the existing technologies focus on improving the performance of individual devices, and few researches on the array of phototransistor devices are still performed. In particular, photolithography, which is one of the most important processes in the array of electronic devices, has been lack of research due to its difficulty in compatibility with the aggressive nature of organic electronics.
Therefore, the photoelectric transistor device based on the planar heterojunction structure is prepared through a multilayer solution process, patterning of the film is realized through a photoetching method, and further the photoelectric transistor array is prepared.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a phototransistor array based on a polymer semiconductor/photosensitive quantum dot and a method for manufacturing the same.
The present invention provides a phototransistor array based on polymer semiconductors/photo-sensitive quantum dots, having the features comprising: a substrate and a plurality of phototransistors disposed on the substrate, each phototransistor comprising: a gate electrode disposed on the substrate; an insulating layer disposed over the gate electrode; the source electrode and the drain electrode are arranged above the insulating layer; a photosensitive layer disposed on the insulating layer and the source/drain electrodes; the carrier transmission layer is arranged above the photosensitive layer, wherein the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer are all patterned through a photoetching method, the patterns of the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer, the insulating layer below and the gate electrode which are positioned at the same position on the insulating layer form a photoelectric transistor, and all the photoelectric transistors form a photoelectric transistor array.
In the polymer semiconductor/photosensitive quantum dot based phototransistor array provided by the present invention, it may further have such features that: the gate electrode is one of high doped silicon, conductive metal oxide or conductive polymer.
In the polymer semiconductor/photosensitive quantum dot based phototransistor array provided by the present invention, it may further have such features that: the insulating layer is made of insulating polymer material, and the insulating polymer material is one of silicon dioxide, insulating metal oxide, poly-p-vinyl phenol, polyorganosiloxane, polystyrene and polymethyl methacrylate.
In the polymer semiconductor/photosensitive quantum dot based phototransistor array provided by the present invention, it may further have such features that: the source electrode and the drain electrode are made of one of high-doped silicon, conductive metal oxide or conductive polymer, and the thickness of the source electrode and the drain electrode is 20-2000 nm.
In the polymer semiconductor/photosensitive quantum dot based phototransistor array provided by the present invention, it may further have such features that: the material of the photosensitive layer is a mixture of photosensitive quantum dots with long alkyl chain organic ligands and a photo-crosslinking agent capable of crosslinking the long alkyl chain, the thickness of the photosensitive layer is 30-300 nm, the photosensitive quantum dots are cesium lead bromine quantum dots, cesium lead iodine quantum dots, cesium lead chlorine quantum dots, cadmium selenide quantum dots and the like, and the photo-crosslinking agent is 4Bx, 2Bx and the like.
In the polymer semiconductor/photosensitive quantum dot based phototransistor array provided by the present invention, it may further have such features that: the material of the carrier transmission layer is a mixture of a polymer semiconductor with long alkyl side chains and a photo-crosslinking agent capable of crosslinking the long alkyl chains, the thickness of the carrier transmission layer is 30-300 nm, the polymer semiconductor is DPPDTT, PDPP4T, P HT, PQT-12 and the like, and the photo-crosslinking agent is 4Bx, 2Bx and the like.
The invention also provides a preparation method of the phototransistor array based on the polymer semiconductor/photosensitive quantum dot, which has the characteristics that the preparation method comprises the following steps: step S1, setting a gate electrode on a substrate;
step S2, preparing an insulating layer on the gate electrode;
step S3, spin-coating photoresist on the insulating layer to obtain a photoresist film, photoetching the photoresist film to obtain a source drain electrode pattern, depositing a material of the source drain electrode on the insulating layer by an evaporation method based on the source drain electrode pattern, and stripping the photoresist to obtain a source drain electrode;
step S4, preparing a material for preparing a photosensitive layer on the insulating layer with the source and drain electrodes by spin coating, dripping, lifting and printing, and patterning by a photoetching method to obtain the photosensitive layer;
and S5, preparing a material for preparing the carrier transmission layer on the photosensitive layer by spin coating, dripping, lifting and printing, and patterning by a photoetching method to obtain the carrier transmission layer, thereby preparing the phototransistor array based on the polymer semiconductor/photosensitive quantum dot.
Effects and effects of the invention
According to the phototransistor array based on the polymer semiconductor/the photosensitive quantum dot, the cross-linking strategy of mixing a photocrosslinker into the polymer semiconductor and the photosensitive quantum dot which can be processed by a solution method is adopted, and after ultraviolet light curing, the solvent resistance of the polymer semiconductor film and the photosensitive quantum dot film is enhanced, so that layer-by-layer stacking of the polymer semiconductor film and the photosensitive quantum dot film is realized, and the phototransistor based on a plane heterostructure formed by the polymer semiconductor/the photosensitive quantum dot film is constructed.
Meanwhile, in the invention, the addition of the photo-crosslinking agent enables the solution film forming process to be compatible with the photoetching process. The patterning of the polymer semiconductor and the photosensitive quantum dot film is realized by using a photoetching method, so that the phototransistor array based on the polymer semiconductor/the photosensitive quantum dot is prepared.
In conclusion, the photoelectric transistor device based on the polymer semiconductor/photosensitive quantum dot prepared by the invention has better photosensitivity thanks to the planar heterostructure based on the polymer semiconductor/photosensitive quantum dot film; the photo transistor array based on the polymer semiconductor/photosensitive quantum dot prepared by the invention has better consistency in performance due to the stability of the photoetching process. And, micro-structure patterned polymer semiconductor/photosensitive quantum dot based phototransistor arrays can be mass-produced by photolithography.
Drawings
FIG. 1 is a block diagram of a single phototransistor in a polymer semiconductor/photosensitive quantum dot based phototransistor array in an embodiment of the present invention;
FIG. 2 is a flow chart of the fabrication of a polymer semiconductor/photoactive quantum dot-based phototransistor array in an embodiment of the present invention;
FIG. 3 is an ultraviolet-visible-near infrared absorption spectrum of a photoactive layer and a carrier-transporting layer of a polymer semiconductor/photoactive quantum dot-based phototransistor array in an embodiment of the present invention;
FIG. 4 is a transfer characteristic of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array in an illuminated state and in a dark state in an embodiment of the present invention;
FIG. 5 is an output characteristic of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array in an illuminated state and in a dark state in an embodiment of the present invention;
FIG. 6 is an excitatory postsynaptic current behavior under optical signal stimulation of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array in an embodiment of the present invention;
FIG. 7 is a double pulse facilitation behavior of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array under optical signal stimulation in an embodiment of the present invention;
FIG. 8 is a transfer characteristic of 100 transistors of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array in an embodiment of the present invention in an illuminated state and in a dark state;
fig. 9 is a photo-dark current ratio statistic for 100 transistors of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array in an embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement of the purposes and the effects of the present invention easy to understand, the following embodiments are specifically described with reference to the accompanying drawings for a polymer semiconductor/photosensitive quantum dot-based phototransistor array and a preparation method thereof.
< example >
The phototransistor array based on the polymer semiconductor/photosensitive quantum dot of the present embodiment includes a substrate and a plurality of phototransistors disposed on the substrate.
Fig. 1 is a block diagram of a single phototransistor in a polymer semiconductor/photosensitive quantum dot based phototransistor array in an embodiment of the present invention.
As shown in fig. 1, each phototransistor includes a gate electrode 1, an insulating layer 2, a source-drain electrode 3, a photosensitive layer 4, and a carrier transport layer 5.
A gate electrode 1 is provided on the substrate for applying a bias voltage to induce charge carriers in the carrier transport layer, in this embodiment highly doped silicon is used as the gate electrode.
An insulating layer 2 is provided over the gate electrode 1 for isolating conduction between the gate electrode and the carrier transport layer, and silicon dioxide is used as the insulating layer in this embodiment.
A source-drain electrode 3 is disposed above the insulating layer 2 for applying a source-drain voltage to drive directional movement of carriers in the carrier transport layer to form a source-drain current, and in this embodiment, two metals of chromium and gold are used as the source-drain electrode.
A photoactive layer 4 is provided on the insulating layer 2 and the source-drain electrode 3 for absorbing optical signals and generating photogenerated carriers, cesium lead bromine quantum dots being used as photoactive layer in this embodiment.
A carrier transport layer 5 is arranged above the photoactive layer 4 for transporting photogenerated carriers and charge carriers, in this embodiment using a polymer semiconductor DPPDTT as carrier transport layer.
The source-drain electrode 3, the photosensitive layer 4 and the carrier transmission layer 5 are all patterned by a photoetching method, and each pattern of the source-drain electrode 3, the photosensitive layer 4 and the carrier transmission layer 5 which are positioned at the same position on the insulating layer, the insulating layer 2 below and the gate electrode 1 form a photoelectric transistor, and all the photoelectric transistors form a photoelectric transistor array.
Fig. 2 is a flow chart of the fabrication of a polymer semiconductor/photoactive quantum dot-based phototransistor array in an embodiment of the present invention.
As shown in fig. 2, the preparation method of the phototransistor array based on the polymer semiconductor/photosensitive quantum dot according to the present embodiment includes the following steps:
step S1, setting a gate electrode on a substrate, wherein the specific process is as follows:
and selecting a high-doped silicon wafer as a gate electrode.
Step S2, preparing an insulating layer on the gate electrode, wherein the specific process is as follows:
preparing an insulating layer by using silicon dioxide, preparing a silicon dioxide insulating layer with the thickness of 300nm on a highly doped silicon wafer, obtaining the highly doped silicon wafer with 300nm silicon dioxide on the surface, ultrasonically cleaning the silicon wafer by using acetone, isopropanol and deionized water, then cleaning the silicon wafer by using deionized water and drying the silicon wafer by using argon for later use.
Step S3, spin coating photoresist on the insulating layer to obtain a photoresist film, photoetching the photoresist film to obtain a source-drain electrode pattern, depositing a material of the source-drain electrode on the insulating layer by an evaporation method based on the source-drain electrode pattern, and stripping the photoresist to obtain the source-drain electrode, wherein the specific process is as follows:
firstly, spin-coating positive photoresist AZ5214E on an insulating layer to obtain a photoresist film, wherein the spin-coating speed in spin-coating is 3000r/min, the spin-coating time is 60s, the photoresist film is annealed at 100 ℃ on a heating table after spin-coating is completed, a mask is used for exposing the photoresist film by a photoetching machine after annealing is completed, the exposure wavelength is 365nm, the time is 10s, the film is placed in a developing solution after exposure for 60s, the film is placed in deionized water for washing for 30s after development is completed, a source-drain electrode pattern is obtained, and the patterned photoresist film is obtained.
Then, sequentially depositing chromium and gold under high vacuum condition of vacuum degree less than 1×10 to prepare patterned source-drain electrode -3 Pa, the thickness of chromium is 7nm, the thickness of gold is 30nm, after evaporation is finished, the silicon wafer is placed in acetone for ultrasonic treatment until photoresist and chromium and gold on the photoresist are completely removed, and then the silicon wafer is rinsed by deionized water and ethanol to obtain the patterned source-drain electrode.
And S4, preparing a material for preparing the photosensitive layer on the insulating layer with the source and drain electrodes by a spin coating, dripping, lifting and printing method, and patterning by a photoetching method to obtain the photosensitive layer, wherein the specific process is as follows:
CsPbBr at 25mg/mL 3 Adding 15% of photo-crosslinking agent 4Bx into the quantum dot dispersion liquid, and spin-coating on the quantum dot dispersion liquidOn the insulating layer of the prepared patterned source and drain electrode, spin coating speed is 1500r/min, spin coating time is 60s, and CsPbBr is obtained by using a photoetching machine after a film is obtained 3 Carrying out mask exposure on the quantum dot film, wherein the exposure wavelength is 254nm, the exposure time is 60s, and after exposure, placing the film in chlorobenzene for developing for 60s to obtain patterned CsPbBr 3 And preparing the quantum dot film to obtain a photosensitive layer, wherein all photoetching operations are performed in a yellow light area.
Step S5, preparing a material for preparing a carrier transmission layer on a photosensitive layer by spin coating, drop coating, lifting and printing, patterning by a photoetching method to obtain the carrier transmission layer, and preparing a phototransistor array based on a polymer semiconductor/photosensitive quantum dot, wherein the specific process is as follows:
adding a photocrosslinker 4Bx with the mass fraction of 5% into a DPPDT solution with the concentration of 5mg/mL, spin-coating the solution on a photosensitive layer at the spin-coating speed of 1500r/min and the spin-coating time of 60s, performing mask exposure on the DPPDT film by using a photoetching machine after the film is obtained, wherein the exposure wavelength is 365nm and the time is 300s, placing the film in chlorobenzene for developing for 60s after the exposure to obtain a patterned DPPDT film, preparing a carrier transmission layer, performing all photoetching operations in a yellow light area, and annealing for 20min at the temperature of 100 ℃ on a heating table after the preparation is completed to obtain the phototransistor array based on the polymer semiconductor/photosensitive quantum dots.
Fig. 3 is an ultraviolet-visible-near infrared absorption spectrum of a photoactive layer and a carrier-transporting layer of a polymer semiconductor/photoactive quantum dot-based phototransistor array in an embodiment of the present invention.
As shown in fig. 3, the phototransistor device prepared in this embodiment has strong absorption to the visible light with the wavelength of 450nm, so in the subsequent performance test, the visible light with the wavelength of 450nm is selected as the test wavelength, and the subsequent illumination state is the state of the device under the irradiation of the visible light with the wavelength of 450 nm.
Fig. 4 is a transfer characteristic curve of a polymer semiconductor/photo-quantum dot based phototransistor array in an illuminated state and a dark state in an embodiment of the present invention, and fig. 5 is an output characteristic curve of the polymer semiconductor/photo-quantum dot based phototransistor array in an illuminated state and a dark state in an embodiment of the present invention.
As shown in fig. 4 and 5, the phototransistor device manufactured in this embodiment has good transistor characteristics and photosensitivity characteristics.
Fig. 6 is an excitatory postsynaptic current behavior of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array under optical signal stimulation in an embodiment of the present invention, and fig. 7 is a bipulse facilitation behavior of a polymer semiconductor/photo-sensitive quantum dot based phototransistor array under optical signal stimulation in an embodiment of the present invention.
As shown in fig. 6 and 7, the phototransistor device prepared in this embodiment can simulate the excitatory postsynaptic current and the double-pulse facilitated synaptic behavior of a biological synapse under optical signal stimulation.
Fig. 8 is a transfer characteristic curve of 100 transistors of a polymer semiconductor/photo-quantum dot based phototransistor array in an embodiment of the present invention in an illuminated state and in a dark state, and fig. 9 is a photo-dark current ratio statistic of 100 transistors of a polymer semiconductor/photo-quantum dot based phototransistor array in an embodiment of the present invention.
As shown in fig. 8 and fig. 9, through testing of 100 transistors in the phototransistor array based on the polymer semiconductor/photosensitive quantum dot prepared in the present embodiment, it can be seen that the transfer curve coincidence ratio of 100 devices is high, and the light-dark current ratio is similar, which indicates that the phototransistor array based on the polymer semiconductor/photosensitive quantum dot prepared in the present embodiment has better consistency.
Effects and effects of the examples
In this example, DPPDTT and CsPbBr are prepared from solution processable polymer semiconductors 3 The photo-crosslinking agent 4Bx is mixed in to strengthen the DPPDTT and the CsPbBr of the polymer semiconductor 3 The solvent resistance of the film further realizes the layer-by-layer stacking of the two, and builds the polymer semiconductor DPPDTT/photosensitive quantum dot CsPbBr 3 Planar heterostructure phototransistor. Meanwhile, in the embodiment, the addition of the photo-crosslinking agent enables the solution film forming process to be compatible with the photoetching process, and the polymer semiconductor DPPDTT and the photosensitive quantum dot CsPbBr are realized by using a photoetching method 3 Patterning the film to prepare DPPDTT and CsPbBr based on polymer semiconductor 3 Is provided.
Further, benefit from DPPDTT and CsPbBr based polymer semiconductor and photo-sensitive quantum dots 3 Planar heterojunction structure composed of the polymer semiconductor DPPDTT and photosensitive quantum dot CsPbBr prepared in the embodiment 3 The phototransistor device has better photosensitivity and can simulate the basic behavior of biological synapses under the stimulation of optical signals; the polymer semiconductor DPPDTT and the photosensitive quantum dot CsPbBr prepared in the embodiment benefit from the stability of the photoetching process 3 The phototransistor array performance of (c) exhibits good uniformity. And, the microstructure patterning based on the polymer semiconductor DPPDTT and the photosensitive quantum dot CsPbBr can be prepared in a large scale by a photolithography method 3 Is provided.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.
Claims (7)
1. A polymer semiconductor/photoactive quantum dot-based phototransistor array comprising a substrate and a plurality of phototransistors disposed on the substrate, each of the phototransistors comprising:
a gate electrode disposed on the substrate;
an insulating layer disposed over the gate electrode;
the source electrode and the drain electrode are arranged above the insulating layer;
a photosensitive layer disposed on the insulating layer and the source/drain electrodes;
a carrier transport layer disposed over the photoactive layer,
the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer are all patterned by a photoetching method, the patterns of the source electrode, the drain electrode, the photosensitive layer and the carrier transmission layer, which are positioned at the same position on the insulating layer, and the insulating layer and the gate electrode below form a photoelectric transistor, and all the photoelectric transistors form a photoelectric transistor array.
2. The polymer semiconductor/photoactive quantum dot-based phototransistor array as set forth in claim 1, wherein:
wherein the gate electrode is one of highly doped silicon, conductive metal oxide or conductive polymer.
3. The polymer semiconductor/photoactive quantum dot-based phototransistor array as set forth in claim 1, wherein:
the insulating layer is made of an insulating polymer material, and the insulating polymer material is one of silicon dioxide, insulating metal oxide, poly-p-vinyl phenol, polyorganosiloxane, polystyrene and polymethyl methacrylate.
4. The polymer semiconductor/photoactive quantum dot-based phototransistor array as set forth in claim 1, wherein:
the source electrode and the drain electrode are made of one of high-doped silicon, conductive metal oxide or conductive polymer, and the thickness of the source electrode and the drain electrode is 20 nm-2000 nm.
5. The polymer semiconductor/photoactive quantum dot-based phototransistor array as set forth in claim 1, wherein:
the photosensitive layer is made of a mixture of photosensitive quantum dots with long alkyl chain organic ligands and a photo-crosslinking agent capable of crosslinking the long alkyl chains, and the thickness of the photosensitive layer is 30-300 nm.
6. The polymer semiconductor/photoactive quantum dot-based phototransistor array as set forth in claim 1, wherein:
wherein the material of the carrier transport layer is a mixture of a polymer semiconductor with long alkyl side chains and a photo-crosslinking agent capable of crosslinking the long alkyl chains,
the thickness of the carrier transmission layer is 30 nm-300 nm.
7. A method of manufacturing a polymer semiconductor/photoactive quantum dot-based phototransistor array as claimed in any one of claims 1 to 6, comprising the steps of:
step S1, setting a gate electrode on a substrate;
step S2, preparing an insulating layer on the gate electrode;
step S3, spin-coating photoresist on the insulating layer to obtain a photoresist film, photoetching the photoresist film to obtain a source-drain electrode pattern, depositing a material of a source-drain electrode on the insulating layer by an evaporation method based on the source-drain electrode pattern, and stripping the photoresist to obtain a source-drain electrode;
step S4, preparing a material for preparing a photosensitive layer on the insulating layer with the source electrode and the drain electrode by a spin coating, dripping, lifting and printing method, and patterning by a photoetching method to obtain the photosensitive layer;
and S5, preparing a material for preparing the carrier transmission layer on the photosensitive layer by spin coating, dripping, lifting and printing, patterning by a photoetching method to obtain the carrier transmission layer, and preparing the phototransistor array based on the polymer semiconductor/photosensitive quantum dots.
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