CN117457391A - Metallized film internal string structure capacitor and manufacturing method thereof - Google Patents

Abstract

The invention discloses a capacitor with a metallized film internal string structure and a manufacturing method thereof, wherein the device comprises a multilayer capacitor sheet, a metallized film layer I consists of a base film I, a metallized layer active area I, a metallized layer thickening area I and a metallized shielding belt I, a metallized film layer II consists of a base film II, a metallized layer active area II, a metallized layer thickening area II and a metallized shielding belt II, the metallized layer thickening area I corresponds to the metallized shielding belt II, and the metallized shielding belt I corresponds to the metallized layer thickening area II. The dielectric layer is filled between the film layers by using impregnating oil, and air in the gap is discharged by using the impregnating oil, so that air gap ionization of the capacitor can not occur, the electrode plate of the metallization layer can not gradually lose capacitance due to the air gap ionization damage, the capacitor has self-healing property, and the electrical property can be recovered after breakdown.

Description

Metallized film internal string structure capacitor and manufacturing method thereof

Technical Field

The invention belongs to the technical field of capacitors, and particularly relates to a capacitor with a metallized in-film string structure and a manufacturing method of the capacitor with the metallized in-film string structure.

Background

The capacitor has the main function of combining a half-wave voltage doubling rectifying circuit with the high-voltage diode to provide direct-current anode high voltage for the magnetron. The secondary high-voltage winding of the high-voltage transformer of the microwave oven outputs an alternating voltage of about 2100VAC, and after voltage doubling rectification by a high-voltage capacitor and a high-voltage diode, a direct-current high voltage of about 4500VDC is obtained and is supplied to the anode and the cathode of a magnetron for use. In addition, the lead capacitance current can compensate the lagging leakage inductance current of the microwave oven, and the power factor of the microwave oven can be improved. .

The current common microwave oven capacitor takes a polypropylene coarsening film and capacitor paper as dielectrics, aluminum foil as polar plates, an aluminum shell, a dipping capacitor and a model CH85 paper film composite microwave oven capacitor, wherein the rated voltage is 2100-2500VAC, and the rated capacitance is 0.5-1.23 mu F. However, the capacitor with the structure has no self-healing property, and is scrapped and fails after breakdown.

Disclosure of Invention

Aiming at the problem that the capacitor is scrapped and fails after no self-healing property is broken down in the prior art, the invention provides the following technical scheme:

a metallized in-film string structure capacitor comprising: the multi-layer capacitor plate is wound into a capacitor core element and comprises a first metallized film layer, a first medium layer, a second metallized film layer and a second medium layer, and the gaps among the first metallized film layer, the first medium layer, the second metallized film layer and the second medium layer are filled with impregnating oil;

the first metallized film layer consists of a first base film, a first metallized layer active area, a first metallized layer thickening area and a first non-metallized shielding belt, the second metallized film layer consists of a second base film, a second metallized layer active area, a second metallized layer thickening area and a second non-metallized shielding belt, the first metallized layer thickening area corresponds to the second non-metallized shielding belt, and the first non-metallized shielding belt corresponds to the second metallized layer thickening area.

As the optimization of the technical scheme, the number of the first metallized layer active areas is two, the first metallized layer thickening area is positioned on one side of the first metallized layer active areas, the number of the second metallized layer active areas is one, and the second metallized layer thickening area is positioned in the middle of the second metallized layer active areas.

As the optimization of the technical scheme, the number of the first metallized layer active areas and the number of the second metallized layer active areas are two, the first metallized layer thickening areas are respectively positioned at one side and the middle of the first metallized layer active areas, and the second metallized layer thickening areas are respectively positioned at one side and the middle of the second metallized layer active areas.

As the optimization of the technical scheme, the number of the first metallized layer active areas is three, one of the first metallized layer thickening areas is located in the middle of the first metallized layer active area, the rest of the first metallized layer thickening areas are located on one side of the first metallized layer active area, the number of the second metallized layer active areas is two, and the second metallized layer thickening areas are located in the middle of the second metallized layer active area.

As the preferable mode of the technical scheme, the first medium layer and the second medium layer are both a layer of optical film, and the thickness of the optical film is the same as that of the first base film and the second base film.

As the preferable mode of the technical scheme, the first medium layer and the second medium layer are two layers of optical films, and the thickness of each optical film is the same as that of the first base film and the second base film.

Preferably, the impregnating oil is cross-linked diarylethane PXE, methyl silicone oil or microcrystalline wax.

A method for manufacturing a capacitor with a metallized film internal string structure comprises the following steps,

s1, winding;

film penetrating is carried out according to the sequence of the first metallized film layer, the first medium layer, the second metallized film layer and the second medium layer, the staggered distance or the retraction amount of each film layer is adjusted, and the capacitor core element is rolled;

s2, metal spraying;

and spraying metal layers on two end surfaces of the capacitor core element.

S3, vacuum impregnation;

placing a plurality of capacitor core elements in an impregnation tank, pumping out air in the tank, injecting impregnating oil to completely submerge the capacitor core elements, heating to 95-105 ℃ and preserving heat, and ensuring the capacitor core elements to be under the oil surface during the heat preservation;

s4, oil draining and welding;

removing redundant immersion oil on the capacitor core element, then welding a lead-out terminal on the metal spraying surface of the capacitor core element, and simultaneously connecting a discharge resistor in parallel to form a capacitor core group;

s5, assembling and pouring;

mounting the capacitor core group into a plastic shell, and then encapsulating the capacitor by using a potting material such as epoxy resin, polyurethane and the like and curing;

s6, testing;

and testing the electrical performance of the capacitor, and detecting the electrical performance of the capacitor.

The beneficial effects of the invention are as follows:

1. the first dielectric layer, the second dielectric layer and the second dielectric layer form a dielectric layer, all the layers of the dielectric layer are filled with impregnating oil, and the impregnating oil discharges air in a gap, so that air gap ionization of the capacitor can not occur, the electrode plate of the metallization layer can not gradually lose capacitance due to the air gap ionization damage, the capacitor has self-healing property, and the electrical property can be recovered after breakdown;

2. after the multilayer capacitor plates are formed into capacitor core elements, a plurality of capacitor series structures are formed in the multilayer capacitor plates, so that the working voltage is divided into a plurality of relatively low voltages, the voltage between each capacitor plate in series connection in the multilayer capacitor plates is relatively low, the discharge phenomenon is not easy to occur, and meanwhile, the number of the series structures is increased to improve the impact resistance of the capacitor to higher voltage and current;

3. the capacitance of the capacitor is changed through the medium layer I and the medium layer II with different thicknesses, so that the capacitor is suitable for use with different working electric field intensities;

4. the thickness of the first active area of the metallization layer and the thickness of the second active area of the metallization layer are increased through the first thickening area of the metallization layer and the second thickening area of the metallization layer, the contact area with an external circuit is increased, the passing rate of current is increased, the performance of the capacitor is better, and the product is more stable.

Drawings

FIG. 1 is a schematic front sectional view showing embodiment 1;

FIG. 2 is a schematic front sectional view showing embodiment 2;

FIG. 3 is a schematic front sectional view showing embodiment 3;

FIG. 4 is a schematic front sectional view showing embodiment 4;

FIG. 5 is a schematic view showing a front cross-sectional view of example 5;

fig. 6 is a schematic front sectional view showing embodiment 6.

In the figure: 11. a first base film; 12. a first metallization layer active area; 13. a first thickening area of the metallization layer; 14. a first non-metallized shielding tape; 20. a first dielectric layer; 31. a second base film; 32. a second active area of the metallization layer; 33. a second thickening area of the metallization layer; 34. a second non-metallized shielding tape; 40. a second dielectric layer; 50. impregnating with oil.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the embodiments and the accompanying drawings.

Example 1

In fig. 1-6, a metallized intra-film string structure capacitor comprising: a multilayer capacitor sheet wound into a capacitor core element, the multilayer capacitor sheet including a first metallized film layer, a first dielectric layer 20, a second metallized film layer and a second dielectric layer 40, the gaps between the first metallized film layer, the first dielectric layer 20, the second metallized film layer and the second dielectric layer 40 being filled with impregnating oil 50;

the first metallized film layer consists of a first base film 11, a first metallized layer active area 12, a first metallized layer thickening area 13 and a first non-metallized shielding tape 14, the second metallized film layer consists of a second base film 31, a second metallized layer active area 32, a second metallized layer thickening area 33 and a second non-metallized shielding tape 34, the first metallized layer thickening area 13 corresponds to the second non-metallized shielding tape 34, the first non-metallized shielding tape 14 corresponds to the second metallized layer thickening area 33, and a capacitor internal serial structure is formed between the first metallized film layer and the second metallized film layer.

The impregnating oil 50 is cross-linked diarylethane PXE, methyl silicone oil or microcrystalline wax, and the dielectric constant of the impregnating oil 50 such as cross-linked diarylethane PXE, methyl silicone oil or microcrystalline wax is higher than that of polypropylene, so that the capacitance of the capacitor with a film oil structure is larger.

The square resistances of the first metallization layer active region 12 and the second metallization layer active region 32 are 12+/-4 omega, the square resistances of the first metallization layer thickening region 13 and the second metallization layer thickening region 33 are 3+/-1 omega, the material is zinc-aluminum composite metal, the zinc content is 90% -95%, and the zinc-aluminum composite metal is obtained through PVD vacuum physical vapor deposition evaporation.

The first base film 11, the first medium layer 20, the second base film 31 and the second medium layer 40 form a dielectric medium, the layers of the dielectric medium layers are filled with impregnating oil 50, air in a gap is discharged by the impregnating oil 50, so that air gap ionization of the capacitor can not occur, a metalized layer polar plate can not gradually lose capacitance due to air gap ionization damage, the capacitor has self-healing characteristics, the electric performance can be recovered after breakdown, meanwhile, the thicknesses of the first metalized layer active area 12 and the second metalized layer active area 32 are increased through the first metalized layer thickening area 13 and the second metalized layer thickening area 33, the contact area with an external circuit is increased, the passing rate of current is increased, the performance of the capacitor is better, and the product is more stable.

A method for manufacturing a capacitor with a metallized film internal string structure comprises the following steps,

s1, winding;

film penetrating according to the sequence of the first metallized film layer, the first medium layer 20, the second metallized film layer and the second medium layer 40, and adjusting the staggered distance or the retraction amount of each film layer to roll into a capacitor core element;

s2, metal spraying;

and spraying metal layers on two end surfaces of the capacitor core element.

S3, vacuum impregnation;

placing a plurality of capacitor core elements in an impregnation tank, pumping out air in the tank, injecting impregnating oil 50 to completely submerge the capacitor core elements, heating to 95-105 ℃ and preserving heat, and ensuring the capacitor core elements to be under the oil surface during the heat preservation;

s4, oil draining and welding;

removing redundant impregnating oil 50 on the capacitor core element, then welding a lead-out terminal on the metal spraying surface of the capacitor core element, and simultaneously connecting a discharge resistor in parallel to form a capacitor core group;

s5, assembling and pouring;

mounting the capacitor core group into a plastic shell, and then encapsulating the capacitor by using a potting material such as epoxy resin, polyurethane and the like and curing;

s6, testing;

and testing the electrical performance of the capacitor, and detecting the electrical performance of the capacitor.

In the technical scheme of the manufacturing method of the capacitor with the metallized film inner string structure, the multilayer capacitor sheet is wound into the capacitor core element, so that the manufacturing process of the capacitor core element is simplified, the manufacturing cost is reduced, and meanwhile, the product volume is reduced.

In fig. 1, the number of the first metallization layer active areas 12 is two, the first metallization layer thickening area 13 is located at one side of the first metallization layer active areas 12, the number of the second metallization layer active areas 32 is one, and the second metallization layer thickening area 33 is located in the middle of the second metallization layer active areas 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

After the multi-layer capacitor plates are formed into the capacitor core element, two capacitor series structures are formed inside the capacitor core element, so that the working voltage is divided into a plurality of relatively low voltages, the voltage between each capacitor plate in series connection inside the capacitor core element is relatively low, and the discharging phenomenon is not easy to occur.

Example 2

In fig. 2, the number of the first metallization layer active areas 12 is two, the first metallization layer thickening area 13 is located at one side of the first metallization layer active areas 12, the number of the second metallization layer active areas 32 is one, and the second metallization layer thickening area 33 is located in the middle of the second metallization layer active areas 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

Different from embodiment 1, the thicknesses of the first dielectric layer 20 and the second dielectric layer 40 in embodiment 2 are higher, and the capacitance of the capacitor is changed through the dielectrics with different thicknesses, so that the capacitor is suitable for use with different working electric field intensities.

Example 3

In fig. 3, the number of the first metallization layer active areas 12 and the second metallization layer active areas 32 is two, the first metallization layer thickening area 13 is respectively located at one side and the middle of the first metallization layer active areas 12, and the second metallization layer thickening area 33 is respectively located at one side and the middle of the second metallization layer active areas 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

Unlike example 1, the number of series structures in example 3 is three, increasing the division fraction of the operating voltage, and improving the impact effect of the capacitor on higher voltage and current.

Example 4

In fig. 4, the number of the first metallization layer active areas 12 and the second metallization layer active areas 32 is two, the first metallization layer thickening area 13 is respectively located at one side and the middle of the first metallization layer active areas 12, and the second metallization layer thickening area 33 is respectively located at one side and the middle of the second metallization layer active areas 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

Unlike example 3, the thicknesses of the first dielectric layer 20 and the second dielectric layer 40 in example 4 are higher, and the number of series structures is increased while the capacitance of the capacitor is increased.

Example 5

In fig. 5, the number of the first metallization layer active areas 12 is three, one of the first metallization layer thickening areas 13 is located in the middle of the first metallization layer active area 12, the remaining first metallization layer thickening areas 13 are located at one side of the first metallization layer active area 12, the number of the second metallization layer active areas 32 is two, and the second metallization layer thickening areas 33 are located in the middle of the second metallization layer active area 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

In comparison with the embodiment 1 and the embodiment 3, the number of the series structures in the embodiment 5 is four, and the division fraction of the working voltage is further increased, so that the impact effect of the capacitor on higher voltage and current is greatly improved.

Example 6

In fig. 6, the number of the first metallization layer active areas 12 is three, one of the first metallization layer thickening areas 13 is located in the middle of the first metallization layer active area 12, the remaining first metallization layer thickening areas 13 are located at one side of the first metallization layer active area 12, the number of the second metallization layer active areas 32 is two, and the second metallization layer thickening areas 33 are located in the middle of the second metallization layer active area 32.

The first medium layer 20 and the second medium layer 40 are all a layer of optical film, and the optical film, the first base film 11 and the second base film 31 are all made of polypropylene.

Unlike example 5, the thicknesses of the first dielectric layer 20 and the second dielectric layer 40 in example 6 are higher, and the capacitance of the capacitor is increased by the dielectric strength, so that the capacitor can be suitable for use with different working electric field intensities.

The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting.

Claims (8)

1. A metallized in-film string structure capacitor comprising: a multilayer capacitor sheet wound into a capacitor core element, characterized in that the multilayer capacitor sheet comprises a first metallized film layer, a first dielectric layer (20), a second metallized film layer and a second dielectric layer (40), and the gaps between the first metallized film layer, the first dielectric layer (20), the second metallized film layer and the second dielectric layer (40) are filled with impregnating oil (50);

the first metallized film layer consists of a first base film (11), a first metallized layer active area (12), a first metallized layer thickening area (13) and a first non-metallized shielding tape (14), the second metallized film layer consists of a second base film (31), a second metallized layer active area (32), a second metallized layer thickening area (33) and a second non-metallized shielding tape (34), the first metallized layer thickening area (13) corresponds to the second non-metallized shielding tape (34), and the first non-metallized shielding tape (14) corresponds to the second metallized layer thickening area (33).

2. The capacitor of claim 1, wherein the number of active areas of the first metallization layer (12) is two, the thickened area of the first metallization layer (13) is located at one side of the active areas of the first metallization layer (12), the number of active areas of the second metallization layer (32) is one, and the thickened area of the second metallization layer (33) is located at the middle of the active areas of the second metallization layer (32).

3. The capacitor of claim 1, wherein the number of the first active areas (12) and the second active areas (32) is two, the two thickened areas (13) are respectively located at one side and the middle of the first active areas (12) and the two thickened areas (33) are respectively located at one side and the middle of the second active areas (32).

4. The capacitor of claim 1, wherein the number of active areas of the metallization layer is three, one of the thickened areas of the metallization layer is located in the middle of the active area of the metallization layer (12), the rest of the thickened areas of the metallization layer is located at one side of the active area of the metallization layer (12), the number of active areas of the metallization layer (32) is two, and the two thickened areas of the metallization layer (33) are located in the middle of the active area of the metallization layer (32).

5. The capacitor of claim 1, wherein the first dielectric layer (20) and the second dielectric layer (40) are each an optical film, and the optical film, the first base film (11) and the second base film (31) are each made of polypropylene.

6. The capacitor of claim 1, wherein the first dielectric layer (20) and the second dielectric layer (40) are two optical films, and the first optical film, the first base film (11) and the second base film (31) are made of polypropylene.

7. A metallized in-film string capacitor according to claim 1, wherein the impregnating oil (50) is a cross-linked diarylethane PXE, a methyl silicone oil or a microcrystalline wax.

8. A method for manufacturing a capacitor having a metallized in-film string structure according to any one of claims 1 to 7, comprising the steps of,

s1, winding;

film penetrating is carried out according to the sequence of the first metallized film layer, the first medium layer (20), the second metallized film layer and the second medium layer (40), the staggered distance or the retraction amount of each film layer is adjusted, and the capacitor core element is rolled;

s2, metal spraying;

and spraying metal layers on two end surfaces of the capacitor core element.

S3, vacuum impregnation;

placing a plurality of capacitor core elements in an impregnation tank, pumping out air in the tank, injecting impregnating oil (50) to completely submerge the capacitor core elements, heating to 95-105 ℃ and preserving heat, and ensuring the capacitor core elements to be under the oil surface during the heat preservation;

s4, oil draining and welding;

removing redundant impregnating oil (50) on the capacitor core element, then welding a lead-out terminal on the metal spraying surface of the capacitor core element, and simultaneously connecting a discharge resistor in parallel to form a capacitor core group;

s5, assembling and pouring;

mounting the capacitor core group into a plastic shell, and then encapsulating the capacitor by using a potting material such as epoxy resin, polyurethane and the like and curing;

s6, testing;

and testing the electrical performance of the capacitor, and detecting the electrical performance of the capacitor.