CN117451450A - Sample preparation method for detecting annealing wafer extension resistance - Google Patents
Sample preparation method for detecting annealing wafer extension resistance Download PDFInfo
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- CN117451450A CN117451450A CN202311350153.4A CN202311350153A CN117451450A CN 117451450 A CN117451450 A CN 117451450A CN 202311350153 A CN202311350153 A CN 202311350153A CN 117451450 A CN117451450 A CN 117451450A
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- 238000005464 sample preparation method Methods 0.000 title claims abstract description 14
- 238000000137 annealing Methods 0.000 title claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 64
- 239000010703 silicon Substances 0.000 claims abstract description 64
- 238000000227 grinding Methods 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000012188 paraffin wax Substances 0.000 claims abstract description 9
- 229920000742 Cotton Polymers 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000001514 detection method Methods 0.000 claims abstract description 6
- 239000012530 fluid Substances 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 15
- 239000004744 fabric Substances 0.000 claims description 12
- 239000005337 ground glass Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 239000010432 diamond Substances 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 5
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- 239000012459 cleaning agent Substances 0.000 claims description 3
- 238000003776 cleavage reaction Methods 0.000 claims description 3
- 230000007017 scission Effects 0.000 claims description 3
- 210000003813 thumb Anatomy 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims 1
- 238000005498 polishing Methods 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 50
- 229910008062 Si-SiO2 Inorganic materials 0.000 description 3
- 229910006403 Si—SiO2 Inorganic materials 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2866—Grinding or homogeneising
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a sample preparation method for detecting the extension resistance of an annealed wafer, which belongs to the technical field of silicon crystal detection and comprises the following operation steps: the first step: the silicon sheet was split into two pieces. And a second step of: repeating the first step to split the silicon wafer into square shapes. And a third step of: and after the angle gauge is heated, taking the angle gauge down by pliers and placing the angle gauge on a sample preparation table. Fourth step: and uniformly coating a paraffin rod on the surface of the angle gauge, dissolving the paraffin rod while the paraffin rod is hot, and attaching a silicon wafer sample to the center of the angle gauge. Fifth step: starting the machine, and adjusting the position of the grinding fluid by using the cotton swab rod part. Sixth step: the grinding speed and the grinding time are set. Seventh step: after the grinding is completed, the silicon wafer sample is washed and wiped. Eighth step: and heating the cleaned silicon wafer sample, taking down, placing and cooling. Ninth step: the state of the abrasive surface was checked. The volatilization and removal of impurities from the surface of the polishing pad are promoted, the composite center is reduced, the electric activity is improved, the resistivity is reduced, and the phenomenon of unstable resistivity in the depth of 1-2 mu m of the polishing surface is improved.
Description
Technical Field
The invention relates to the technical field of silicon crystal detection, in particular to a sample preparation method for detecting an extension resistance of an annealed wafer.
Background
The silicon wafer with special performance can be obtained by carrying out secondary processing of specific process treatments such as annealing based on polished wafers, and the special performance silicon wafer can meet the requirements of different application scenes and is an indispensable part of the semiconductor industry. In the integrated circuit manufacturing process, annealing treatment is a common treatment process, and particularly, after ion implantation is performed on chips such as modern cmos, rapid high-temperature annealing (rtp) is used to repair defects and realize regular arrangement of crystal lattices. The annealing sheet manufacturing process is a process of raising the temperature and then lowering the temperature, and the polishing sheet is heated in hydrogen or argon and then enters the annealing process. Compared with polishing sheets, the surface of the polishing sheet has high gettering capability and greatly reduced oxygen content, so that the polishing sheet has better crystal integrity.
The annealing process generally uses a diffusion furnace as a heat treatment method. Dopant contaminants present on the wafer surface do not change resistivity before heat treatment, but after high temperature heat treatment, diffusion affects the resistivity of the device design surface to a depth of 0 to 5 μm, the resistivity changes, and PN junction and type inversion occur when contamination is severe. When used in high frequency products, it is important to achieve uniform resistivity in the near surface region of the silicon wafer; detecting resistivity uniformity of the annealed sheet in a depth direction from the surface to the bulk layer can effectively monitor contamination of unintended dopants in the process.
The SCP method can rapidly measure resistivity values at various points on a wafer without damaging the wafer, and evaluate the quality of an annealed sheet from uniformity of resistivity values at various points, but cannot obtain a change in resistivity in the longitudinal direction from the surface to the bulk layer. The preparation of SRP samples, in particular to the grinding of inclined planes and the surface state of the inclined planes, has serious influence on the precision of the extended resistance test; the preparation of SRP samples is a delicate work process, the correct method must be mastered, and the details of the operation should be noted, otherwise accurate data may not be obtained. SRP testing of annealed samples is particularly focused on resistivity at 1-2 μm depths on the surface, and poor sample surfaces can reduce accuracy and repeatability and increase noise in the data.
Disclosure of Invention
The invention mainly solves the defects existing in the prior art, and provides a sample preparation method for detecting the extension resistance of an annealed wafer, which promotes the volatilization and removal of impurities from the surface of an annealed wafer sample after grinding by carrying out a rapid thermal annealing process, repairs Si-SiO2 interface dangling bonds and surface damaged layers exposed on the surface of the ground sample, reduces the recombination center, improves the electrical activity, reduces the resistivity, and improves the phenomenon of unstable resistivity within the depth of 1-2 mu m of the grinding surface.
The technical problems of the invention are mainly solved by the following technical proposal:
a sample preparation method for detecting the extension resistance of an annealed wafer comprises the following operation steps:
the first step: and placing the silicon wafer on dust-free cloth, marking a short line on the edge of the silicon wafer by using a diamond pen with a notch as a reference, lightly pressing the lower part of the pad support silicon wafer with a pin with the short line as a reference, and splitting the silicon wafer into two pieces.
And a second step of: repeating the first step to crack the silicon sheet into square with the width of about 2-5 mm, wherein three sides of the silicon sheet are the dissociated smooth section, and the other sides of the silicon sheet can be the unsmooth section which is scratched by a diamond pen.
And a third step of: the angle gauge is placed on a heating table, heated at 200 ℃ for about 3-5 minutes, and then taken off by pliers and placed on a sample preparation table.
Fourth step: and uniformly coating paraffin rods from a clean box on the surface of the angle gauge, dissolving while the paraffin rods are hot, attaching the front surface of a silicon wafer sample to the center of the angle gauge upwards, and aligning one end of a dissociation surface to be ground with the center line of the angle gauge under an LED table type magnifying glass.
Aiming at the confirmation of the position of a silicon wafer sample and the preliminary check of the grinding surface during the surface mounting, the conventional method is observed by naked eyes, so that the error is large and the labor is wasted. After the surface mounting, an LED desk type magnifying glass is used for observing whether one end of a dissociation surface to be ground is aligned with the center line of the angle gauge, the state of the grinding surface is checked, and whether the grinding surface is inclined or not is observed; the LED light is bright, the sight is good, the desk-top magnifying glass is convenient for observe, and great magnification sees more clearly, and the error is littleer.
Fifth step: pouring 5-10 ml of 0.1 mu m diamond grinding liquid at the center of the frosted surface of ground glass of grinding equipment, starting a machine, and adjusting the position of the grinding liquid by using a cotton swab rod part to fully and uniformly coat the grinding liquid on the surface of the ground glass; and (3) aligning the center line of the angle gauge with the line at the bottom of the clamp, fixing the angle gauge on the clamp, and then placing the angle gauge on a ground glass disc at a proper angle to enable the cleavage surface to be ground of the silicon wafer sample to be perpendicular to the grinding direction.
Sixth step: starting the machine, setting the grinding rotating speed and the grinding time, and adjusting the position of the grinding liquid by using the rod part of the cotton swab in the grinding process so as to fully grind the silicon wafer sample.
Seventh step: after finishing grinding, the angle gauge attached with the silicon wafer sample is taken down from the clamp and put into a beaker filled with isopropanol, the sample is taken out after being cleaned for 8-10 minutes by an ultrasonic cleaner, and the surface of the sample is wiped by dust-free cloth.
The conventional sample preparation method is aimed at directly wiping the surface of the grinding surface by using a cotton swab dipped with a solvent, has limited cleaning effect and is easy to pollute the inside of a machine. And cleaning the ground silicon wafer sample by using an ultrasonic cleaner, selecting analytically pure isopropanol as a cleaning solvent, setting proper power, temperature and cleaning time, cleaning residual grinding liquid, organic pollutants, grinding scraps and other pollutants on the surface of the silicon wafer sample, and effectively improving the surface cleanliness of the silicon wafer sample.
Eighth step: the cleaned silicon wafer sample was placed on a heating table, heated at 200℃for about 5 minutes, and placed on a cooling table with pliers for cooling for 10 minutes.
Ninth step: under the LED desk magnifier, checking the state of the grinding surface, and if the grinding surface is obviously inclined, preparing a sample again; if the surface has foreign matters, the ultrasonic cleaning agent is used for cleaning until the surface is completely clean.
Preferably, when the silicon wafer sample is placed on the angle gauge, the dust-free cloth is folded for several times, and the thumb is used for pressing the sample for several times by the dust-free cloth, so that the sample is firmly adhered to the angle gauge, the sample is ensured to be flat, and no one end of the sample is tilted.
Preferably, care is taken not to move during pressing to avoid sample position changes; if the sample is slightly moved, forceps may be used to reposition.
Preferably, if the polishing liquid is insufficient, the polishing liquid needs to be timely replenished, otherwise, the state of the polished surface is poor, and the loss of ground glass is accelerated.
Preferably, if the square formed by splitting the silicon wafer is not satisfactory, the silicon wafer needs to be split again, and the front surface of the silicon wafer is always kept upwards in the splitting process, so that marks must be made to avoid confusion.
The invention can achieve the following effects:
compared with the prior art, the method for preparing the sample for detecting the extension resistance of the annealed wafer promotes the volatilization and removal of impurities from the surface of the annealed wafer by carrying out a rapid thermal annealing process on the polished annealed wafer sample, repairs the Si-SiO2 interface dangling bond and the surface damaged layer exposed on the surface of the polished wafer, reduces the composite center, improves the electrical activity, reduces the resistivity, and improves the phenomenon of unstable resistivity in the depth of 1-2 mu m of the polished surface.
Detailed Description
The technical scheme of the invention is further specifically described by the following examples.
Examples: a sample preparation method for detecting the extension resistance of an annealed wafer comprises the following operation steps:
the first step: and placing the silicon wafer on dust-free cloth, marking a short line on the edge of the silicon wafer by using a diamond pen with a notch as a reference, lightly pressing the lower part of the pad support silicon wafer with a pin with the short line as a reference, and splitting the silicon wafer into two pieces.
And a second step of: repeating the first step to crack the silicon sheet into square with the width of about 3.5mm, wherein three sides of the silicon sheet are the dissociated smooth section, and the other sides of the silicon sheet can be the unsmooth section which is scratched by a diamond pen.
If the square formed by splitting the silicon wafer is not in accordance with the requirement, the silicon wafer needs to be split again, and the front of the silicon wafer is always kept upwards in the splitting process, so that marks are required to be made to avoid confusion.
And a third step of: the angle gauge was placed on a heating table, heated at 200℃for about 4 minutes, and then placed on a sample table with pliers removed.
Fourth step: and uniformly coating paraffin rods from a clean box on the surface of the angle gauge, dissolving while the paraffin rods are hot, attaching the front surface of a silicon wafer sample to the center of the angle gauge upwards, and aligning one end of a dissociation surface to be ground with the center line of the angle gauge under an LED table type magnifying glass.
When a silicon wafer sample is placed on the angle gauge, the dust-free cloth is folded for several times, and the thumb is used for pressing the sample for several times by the dust-free cloth, so that the sample is firmly adhered to the angle gauge, the sample is ensured to be flat, and the condition that one end is tilted is avoided. Note that the sample is not moved in the pressing process so as to avoid the change of the position of the sample; if the sample is slightly moved, forceps may be used to reposition.
Fifth step: pouring 7ml of 0.1 mu m diamond grinding liquid at the center of the frosted surface of ground glass of grinding equipment, starting a machine, and adjusting the position of the grinding liquid by using a cotton swab rod part to enable the grinding liquid to be fully and uniformly coated on the surface of the ground glass; and (3) aligning the center line of the angle gauge with the line at the bottom of the clamp, fixing the angle gauge on the clamp, and then placing the angle gauge on a ground glass disc at a proper angle to enable the cleavage surface to be ground of the silicon wafer sample to be perpendicular to the grinding direction.
Sixth step: starting the machine, setting the grinding rotating speed and the grinding time, and adjusting the position of the grinding liquid by using the rod part of the cotton swab in the grinding process so as to fully grind the silicon wafer sample. If the grinding fluid is insufficient, the grinding fluid needs to be timely replenished, otherwise, the grinding surface state is poor, and the loss of ground glass is accelerated.
Seventh step: after finishing grinding, the angle gauge attached with the silicon wafer sample is taken off from the clamp, put into a beaker filled with isopropanol, taken out after being cleaned for 9 minutes by an ultrasonic cleaner, and the surface of the sample is wiped by dust-free cloth.
Eighth step: the cleaned silicon wafer sample was placed on a heating table, heated at 200℃for about 5 minutes, and placed on a cooling table with pliers for cooling for 10 minutes.
Ninth step: under the LED desk magnifier, checking the state of the grinding surface, and if the grinding surface is obviously inclined, preparing a sample again; if the surface has foreign matters, the ultrasonic cleaning agent is used for cleaning until the surface is completely clean. In summary, according to the sample preparation method for detecting the extension resistance of the annealed wafer, through carrying out the rapid thermal annealing process on the polished annealed wafer sample, the volatilization and removal of impurities from the surface of the annealed wafer sample are promoted, the Si-SiO2 interface dangling bond and the surface damaged layer exposed on the surface of the polished sample are repaired, the composite center is reduced, the electrical activity is improved, the resistivity is reduced, and the phenomenon of unstable resistivity in the depth of 1-2 mu m of the polished surface is improved.
The above embodiments are merely examples of the present invention, but the present invention is not limited thereto, and any changes or modifications made by those skilled in the art are included in the scope of the present invention.
Claims (5)
1. The sample preparation method for detecting the extension resistance of the annealed wafer is characterized by comprising the following operation steps:
the first step: placing a silicon wafer on dust-free cloth, marking a short line on the edge of the silicon wafer by using a diamond pen with a notch as a reference, lightly pressing the lower part of a pad support silicon wafer with a pin with the short line as a reference, and splitting the silicon wafer into two pieces;
and a second step of: repeating the first step to crack the silicon sheet into square with the width of about 2-5 mm, wherein three sides of the silicon sheet are the dissociated smooth section, and the other side of the silicon sheet can be the unsmooth section marked by a diamond pen;
and a third step of: placing the angle gauge on a heating table, heating at 200 ℃ for about 3-5 minutes, and taking down the angle gauge by pliers and placing the angle gauge on a sample preparation table;
fourth step: uniformly coating paraffin rods from a clean product box on the surface of an angle gauge for dissolution while the paraffin rods are hot, attaching the front surface of a silicon wafer sample to the center of the angle gauge upwards, and aligning one end of a dissociation surface to be ground with the center line of the angle gauge under an LED table type magnifying glass;
fifth step: pouring 5-10 ml of 0.1 mu m diamond grinding liquid at the center of the frosted surface of ground glass of grinding equipment, starting a machine, and adjusting the position of the grinding liquid by using a cotton swab rod part to fully and uniformly coat the grinding liquid on the surface of the ground glass; aligning the center line of the angle gauge with the line at the bottom of the clamp, fixing the angle gauge on the clamp, and then placing the angle gauge on a ground glass disc at a proper angle to enable the cleavage surface to be ground of the silicon wafer sample to be perpendicular to the grinding direction;
sixth step: starting a machine, setting a grinding rotating speed and a grinding time, and adjusting the position of grinding liquid by using a cotton swab rod part in the grinding process so as to fully grind a silicon wafer sample;
seventh step: after finishing grinding, taking down the angle gauge attached with the silicon wafer sample from the clamp, putting the angle gauge into a beaker filled with isopropanol, cleaning the angle gauge for 8-10 minutes by using an ultrasonic cleaner, taking out the angle gauge, and wiping the surface of the sample by using dust-free cloth;
eighth step: placing the cleaned silicon wafer sample on a heating table, heating at 200 ℃ for about 5 minutes, taking off the silicon wafer sample by pliers, and placing the silicon wafer sample on a cooling table for cooling for 10 minutes;
ninth step: under the LED desk magnifier, checking the state of the grinding surface, and if the grinding surface is obviously inclined, preparing a sample again; if the surface has foreign matters, the ultrasonic cleaning agent is used for cleaning until the surface is completely clean.
2. The sample preparation method for annealing wafer extension resistance detection according to claim 1, wherein: when a silicon wafer sample is placed on the angle gauge, the dust-free cloth is folded for several times, and the thumb is used for pressing the sample for several times by the dust-free cloth, so that the sample is firmly adhered to the angle gauge, the sample is ensured to be flat, and the condition that one end is tilted is avoided.
3. The sample preparation method for annealed wafer extension resistance detection according to claim 2, wherein: note that the sample is not moved in the pressing process so as to avoid the change of the position of the sample; if the sample is slightly moved, forceps may be used to reposition.
4. The sample preparation method for annealing wafer extension resistance detection according to claim 1, wherein: if the grinding fluid is insufficient, the grinding fluid needs to be timely replenished, otherwise, the grinding surface state is poor, and the loss of ground glass is accelerated.
5. The sample preparation method for annealing wafer extension resistance detection according to claim 1, wherein: if the square formed by splitting the silicon wafer is not in accordance with the requirement, the silicon wafer needs to be split again, and the front of the silicon wafer is always kept upwards in the splitting process, so that marks are required to be made to avoid confusion.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311350153.4A CN117451450A (en) | 2023-10-18 | 2023-10-18 | Sample preparation method for detecting annealing wafer extension resistance |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311350153.4A CN117451450A (en) | 2023-10-18 | 2023-10-18 | Sample preparation method for detecting annealing wafer extension resistance |
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