CN117448952A - Method for reducing diamond crystal growth mutual interference based on edge coating treatment - Google Patents
Method for reducing diamond crystal growth mutual interference based on edge coating treatment Download PDFInfo
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- CN117448952A CN117448952A CN202311430508.0A CN202311430508A CN117448952A CN 117448952 A CN117448952 A CN 117448952A CN 202311430508 A CN202311430508 A CN 202311430508A CN 117448952 A CN117448952 A CN 117448952A
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- 239000013078 crystal Substances 0.000 title claims abstract description 130
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 123
- 239000010432 diamond Substances 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000000576 coating method Methods 0.000 title claims abstract description 34
- 239000011248 coating agent Substances 0.000 title claims abstract description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 22
- 239000010439 graphite Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 21
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000002844 melting Methods 0.000 claims description 17
- 230000008018 melting Effects 0.000 claims description 16
- 238000005240 physical vapour deposition Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000012159 carrier gas Substances 0.000 claims description 4
- 238000004040 coloring Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 241000201976 Polycarpon Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment, belonging to the field of diamond growth. The method comprises the following steps: s1: selecting a proper diamond seed crystal, and cleaning the diamond seed crystal; s2: coating the four sides of the diamond; s3: placing the seed crystal into an MPCVD cavity for diamond blank growth; s4: and (3) processing the blank after the growth, and removing polycrystal and graphite at the edge to obtain the diamond monocrystal. The invention has the beneficial effects that compared with the prior art: according to the invention, through coating treatment on the seed crystal, the edge of the diamond seed crystal is not diamond any more, crystal lattice and atoms of the diamond are not contained, when the diamond atoms fall on the upper surface of the film, only polycrystalline diamond or graphite is formed, so that the seed crystal is prevented from horizontally growing along the edge, the horizontal expansion of the seed crystal is further avoided, and the mutual interference of diamond crystal growth is reduced.
Description
Technical Field
The invention belongs to the field of diamond growth, and relates to a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment.
Background
Diamond is a crystal body composed of carbon elements and having a cubic crystal structure. Diamond has the highest hardness among all known materials, as well as excellent optical and thermal properties, and is widely used in various industrial processes and semiconductor industries.
There are two technical paths for crystal growth of diamond. One is high temperature and pressure, which simulates diamond formation under natural geological conditions, typically using high pressures of 4-7GPa and high temperatures of 1000-1500 ℃. Another method is a CVD method in which atoms of diamond form diamond crystals by means of layered growth on a diamond seed under vacuum conditions. Among various diamond growth CVD growth methods, MPCVD growth is a currently mainstream growth method due to advantages such as high purity and high crystal quality.
In MPCVD growth, seed selection and treatment are central factors for improving the production yield, and seed selection is generally controlled by parameters such as the size, crystal orientation, crystal face and the like of the seed. In the current MPCVD growth, based on factors such as cost, process and the like, diamond crystal seeds with (001) crystal faces are generally selected, the side length of each crystal seed is generally between 7 and 40mm, and the thickness of each crystal seed is generally between 0.3 and 1.5 mm; for the crystal orientation of the crystal seed four sides, two types are generally adopted in MPCVD growth, one four sides are in a <100> crystal orientation, the other four sides are in a <110> crystal orientation, and the two crystal orientations are relatively easy to control the growth direction, so that the yield of diamond growth can be ensured.
In the MPCVD diamond growth process, if a microwave frequency of 2.45GHz is used, the current growth table diameter is between 50mm and 100 mm; if a microwave frequency of 915MHz is used, the diameter of the growth stage is between 100 and 300 mm. Since the seed crystal size is much smaller than the growth stage, it is conventional practice to place as many seed crystals as possible on the growth stage, thereby improving the batch yield and reducing the production cost. Common placement modes include:
1) Placing in a zero gap, wherein the seed crystals are all close together, and the growth of the seed crystals can be mutually influenced;
2) Gap placement, see fig. 1, the gap between the seeds is controlled between 0.3 and 1.5mm, and the gap is selected to be matched with the process parameters. In this growth mode, both seeds are used in the growth. Interactions between seeds fall into two cases due to the anisotropy of diamond growth rate;
for the seed crystal with <100> side, the seed crystal generally grows outwards in the direction of the plane of the seed crystal, and eventually two adjacent seed crystals are contacted with each other, the surface of the last seed crystal extends to the surface of the other seed crystal, and finally, a part of the surface of the covered seed crystal does not grow in the vertical direction, and the seed crystal with the extended crystal face is generally difficult to use, and finally, the yield is reduced;
for the seed crystal of <110> edge, during crystal growth, the <110> edge will shrink inward, resulting in a reduced growth surface, eventually forming a cone, and eventually resulting in a reduced overall yield.
In sum, both of these approaches result in reduced yields and reduced yields. Based on this, how to reduce the mutual interference in the diamond crystal growth process is a problem to be solved in the prior art.
Disclosure of Invention
In order to solve the problems, the invention aims to provide a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment, which can avoid the mutual interference and extrusion of diamond crystals in the growth process and ensure that all crystal seeds on a growth table can grow in a balanced and stable way.
In order to achieve the above object, the present invention has the following technical scheme.
The invention provides a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment, which comprises the following steps:
s1: selecting a proper diamond seed crystal, and cleaning the diamond seed crystal;
s2: coating the four sides of the diamond;
s3: placing the seed crystal into an MPCVD cavity for diamond blank growth;
s4: cutting and polishing the grown blank, and removing the polycrystal and graphite at the edge to obtain the diamond monocrystal.
Further, in step S1, the side length of the diamond seed crystal is 7-50mm, and the directions of four sides are parallel to the <100> crystal phase.
Further, in step S1, the cleaning process of the diamond seed crystal is as follows: acid washing, organic solvent cleaning and deionized water cleaning, and removing attachments on the surface of the seed crystal.
Further, in step S2, after the edge of the diamond seed crystal is coated, the edge of the diamond seed crystal is not diamond any more, and has no crystal lattice and atoms of diamond, when the diamond atoms fall on the upper surface of the film, the atoms only form polycrystalline diamond or graphite, so that the seed crystal is prevented from horizontally growing along the edge, further, the horizontal expansion of the seed crystal is avoided, and the mutual interference of the diamond crystal growth is reduced.
Further, step S2 includes:
s21: depositing photoresist on the surface of the diamond seed crystal to form a photoresist layer;
s22: exposing the photoresist layer, and cleaning the photoresist layer by using an organic solvent to expose the area needing to be coated with the film to the surface of the diamond;
s23: performing physical vapor deposition coating on the diamond seed crystal;
s24: and (3) putting the seed crystal into a photoresist removing solvent, and dissolving the photoresist layer to expose the non-coated area on the surface of the diamond.
Further, in step S21, the method of depositing a photoresist layer includes, but is not limited to, spin coating.
Further, in step S23, physical vapor deposition includes magnetron sputtering and arc vapor.
Further, in step S23, the materials used for physical vapor deposition are materials with high melting point and promote the growth of polycrystal or graphite, including but not limited to high melting point metals, high melting point oxides, graphite, silicon.
Further, when the high-melting-point metal is used for coating, the film thickness exceeds 50nm, the high-melting-point metal comprises molybdenum and tungsten, and the melting point exceeds 1500 ℃. When high-melting point oxide is used for coating, the film thickness exceeds 50nm, and the melting point exceeds 1500 ℃. Graphite and silicon are adopted, and the film thickness is more than 500mm.
Further, in step S23, the physical vapor deposition process is as follows: and (3) placing the diamond seed crystal into a high-temperature furnace for heat treatment, wherein the heat treatment atmosphere is air or oxygen, the heat treatment temperature is higher than 600 ℃, the heat treatment time is not less than 1 minute, the exposed diamond surface is converted into graphite, and the thickness of the converted graphite is higher than 0.05mm.
Further, in step S3, the growth conditions are:
process gas: the carrier gas is H2, and the flow rate ranges from 500sccm to 10slm; the carbon source is CH4, and the flow is 6-14% of H2; the coloring gas is N2, N2 is added by pure nitrogen or mixed gas, and the content of N2 is 10ppm to 8000ppm of CH 4;
growth pressure: 80-250Torr;
growth power: microwave power 5kW to 70kW;
growth temperature: 900-1300 ℃;
growth rate: 6-500um/hr.
The invention has the beneficial effects that compared with the prior art: according to the invention, through coating treatment on the seed crystal, the edge of the diamond seed crystal is not diamond any more, crystal lattice and atoms of the diamond are not contained, when the diamond atoms fall on the upper surface of the film, only polycrystalline diamond or graphite is formed, so that the seed crystal is prevented from horizontally growing along the edge, the horizontal expansion of the seed crystal is further avoided, and the mutual interference of diamond crystal growth is reduced.
Drawings
Fig. 1 is a photomicrograph of a prior art gap-setting diamond seed after growth.
Fig. 2 is a photomicrograph of the diamond seed after growth after edge coating treatment in example 1.
Fig. 3 is a schematic view of the structure of the diamond seed crystal after the edge coating treatment in example 1.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In order to achieve the above object, the technical scheme of the present invention is as follows.
With reference to figures 2-3 of the drawings,
example 1:
the embodiment provides a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment, which comprises the following steps:
s1: selecting a proper diamond seed crystal, and cleaning the diamond seed crystal;
s2: coating the four sides of the diamond;
s3: placing the seed crystal into an MPCVD cavity for diamond blank growth;
s4: cutting and polishing the grown blank, and removing the polycrystal and graphite at the edge to obtain the diamond monocrystal.
Further, in step S1, the diamond seed crystal has a side length of 7mm, and the directions of four sides are parallel to the <100> crystal phase.
Further, in step S1, the cleaning process of the diamond seed crystal is as follows: acid washing, organic solvent cleaning and deionized water cleaning, and removing attachments on the surface of the seed crystal.
Further, in step S2, after the edge of the diamond seed crystal is coated, the edge of the diamond seed crystal is not diamond any more, and has no crystal lattice and atoms of diamond, when the diamond atoms fall on the upper surface of the film, the atoms only form polycrystalline diamond or graphite, so that the seed crystal is prevented from horizontally growing along the edge, further, the horizontal expansion of the seed crystal is avoided, and the mutual interference of the diamond crystal growth is reduced.
Further, step S2 includes:
s21: depositing photoresist on the surface of the diamond seed crystal to form a photoresist layer;
s22: exposing the photoresist layer, and cleaning the photoresist layer by using an organic solvent to expose the area needing to be coated with the film to the surface of the diamond;
s23: performing physical vapor deposition coating on the diamond seed crystal;
s24: and (3) putting the seed crystal into a photoresist removing solvent, and dissolving the photoresist layer to expose the non-coated area on the surface of the diamond.
Further, in step S21, the method of depositing the photoresist layer is spin coating.
Further, in step S23, the physical vapor deposition adopts a magnetron sputtering method.
Further, in step S23, the physical vapor deposition is performed by using high melting point metals such as molybdenum and tungsten, the film thickness is more than 50nm, and the melting point is more than 1500 ℃.
Further, in step S23, the physical vapor deposition process is as follows: and (3) placing the diamond seed crystal into a high-temperature furnace for heat treatment, wherein the heat treatment atmosphere is air or oxygen, the heat treatment temperature is higher than 600 ℃, the heat treatment time is not less than 1 minute, the exposed diamond surface is converted into graphite, and the thickness of the converted graphite is higher than 0.05mm.
Further, in step S13, the growth conditions are:
process gas: the carrier gas is H2, and the flow is 500sccm; the carbon source is CH4, and the flow is H2 6; the coloring gas is N2, N2 is added by a pure nitrogen mode or a mixed gas mode, and the N2 content is 10ppm of CH 4;
growth pressure: 80Torr;
growth power: microwave power 5kW;
growth temperature: 900 degrees celsius;
growth rate: 6um/hr.
As can be seen from a comparison of fig. 2 and fig. 1, the edge treatment of the seed crystal by the edge coating process can reduce the growth of the seed crystal along the horizontal direction and avoid the mutual interference of the seed crystal growth.
Example 2:
the embodiment provides a method for reducing the mutual interference of diamond crystal growth based on edge coating treatment, which comprises the following steps:
s1: selecting a proper diamond seed crystal, and cleaning the diamond seed crystal;
s2: coating the four sides of the diamond;
s3: placing the seed crystal into an MPCVD cavity for diamond blank growth;
s4: cutting and polishing the grown blank, and removing the polycrystal and graphite at the edge to obtain the diamond monocrystal.
Further, in step S1, the diamond seed crystal has a side length of 50mm, and the directions of four sides are parallel to the <100> crystal phase.
Further, in step S1, the cleaning process of the diamond seed crystal is as follows: acid washing, organic solvent cleaning and deionized water cleaning, and removing attachments on the surface of the seed crystal.
Further, in step S2, after the edge of the diamond seed crystal is coated, the edge of the diamond seed crystal is not diamond any more, and has no crystal lattice and atoms of diamond, when the diamond atoms fall on the upper surface of the film, the atoms only form polycrystalline diamond or graphite, so that the seed crystal is prevented from horizontally growing along the edge, further, the horizontal expansion of the seed crystal is avoided, and the mutual interference of the diamond crystal growth is reduced.
Further, step S2 includes:
s21: depositing photoresist on the surface of the diamond seed crystal to form a photoresist layer;
s22: exposing the photoresist layer, and cleaning the photoresist layer by using an organic solvent to expose the area needing to be coated with the film to the surface of the diamond;
s23: performing physical vapor deposition coating on the diamond seed crystal;
s24: and (3) putting the seed crystal into a photoresist removing solvent, and dissolving the photoresist layer to expose the non-coated area on the surface of the diamond.
Further, in step S21, the method of depositing the photoresist layer is spin coating.
Further, in step S23, the physical vapor deposition adopts a magnetron sputtering method.
Further, in step S23, the physical vapor deposition is performed by using high melting point metals such as molybdenum and tungsten, the film thickness is more than 50nm, and the melting point is more than 1500 ℃.
Further, in step S23, the physical vapor deposition process is as follows: and (3) placing the diamond seed crystal into a high-temperature furnace for heat treatment, wherein the heat treatment atmosphere is air or oxygen, the heat treatment temperature is higher than 600 ℃, the heat treatment time is not less than 1 minute, the exposed diamond surface is converted into graphite, and the thickness of the converted graphite is higher than 0.05mm.
Further, in step S23, the growth conditions are:
process gas: the carrier gas is H2, and the flow is 10slm; the carbon source is CH4, and the flow is 14% of H2; the coloring gas is N2, N2 is added by a pure nitrogen mode or a mixed gas mode, and the N2 content is 8000ppm of CH 4;
growth pressure: 250Torr;
growth power: microwave power 70kW;
growth temperature: 1300 degrees celsius;
growth rate: 500um/hr.
The above embodiments are merely illustrative of the present invention, and the protective scope of the present invention is not limited to the above embodiments only. The object of the present invention can be achieved by those skilled in the art based on the above disclosure of the present invention and the ranges taken by the parameters.
Claims (8)
1. The method for reducing the mutual interference of diamond crystal growth based on edge coating treatment comprises the following steps:
s1: selecting a proper diamond seed crystal, and cleaning the diamond seed crystal;
s2: coating the four sides of the diamond;
s3: placing the seed crystal into an MPCVD cavity for diamond blank growth;
s4: and (3) processing the blank after the growth, and removing polycrystal and graphite at the edge to obtain the diamond monocrystal.
2. The method for reducing mutual interference of diamond crystal growth based on edge coating treatment according to claim 1, wherein in step S1, the diamond seed crystal has a side length of 7-50mm, and the directions of four sides are parallel to <100> crystal phase.
3. The method for reducing mutual interference of diamond crystal growth based on edge coating treatment according to claim 1, wherein in step S1, the cleaning process of the diamond seed crystal is: acid washing, organic solvent cleaning and deionized water cleaning, and removing attachments on the surface of the seed crystal.
4. The method for reducing mutual interference of diamond crystal growth based on edge coating treatment according to claim 1, wherein step S2 comprises:
s21: depositing photoresist on the surface of the diamond seed crystal to form a photoresist layer;
s22: exposing the photoresist layer, and cleaning the photoresist layer by using an organic solvent to expose the area needing to be coated with the film to the surface of the diamond;
s23: performing physical vapor deposition coating on the diamond seed crystal;
s24: and (3) putting the seed crystal into a photoresist removing solvent, and dissolving the photoresist layer to expose the non-coated area on the surface of the diamond.
5. The method for reducing mutual interference of diamond crystal growth based on edge coating process according to claim 4, wherein in step S23, physical vapor deposition includes magnetron sputtering method and arc vapor method.
6. The method of reducing mutual interference of diamond crystal growth based on edge coating process according to claim 4, wherein in step S23, the physical vapor deposition is performed using a material having a high melting point and promoting polycrystalline or graphite growth, including but not limited to high melting point metal, high melting point oxide, graphite, silicon.
7. The method for reducing mutual interference of diamond crystal growth based on edge coating treatment according to claim 6, wherein in step S23, when the high melting point metal is used for coating, the film thickness is more than 50nm, and the high melting point metal is molybdenum and tungsten, and the melting point is more than 1500 ℃; when high-melting-point oxide is adopted for coating, the film thickness exceeds 50nm, and the melting point exceeds 1500 ℃; graphite and silicon are adopted, and the film thickness is more than 500mm.
8. The method for reducing mutual interference of diamond crystal growth based on edge coating treatment according to claim 1, wherein in step S3, the growth conditions are:
process gas: the carrier gas is H2, and the flow rate ranges from 500sccm to 10slm; the carbon source is CH4, and the flow is 6-14% of H2; the coloring gas is N2, N2 is added by pure nitrogen or mixed gas, and the content of N2 is 10ppm to 8000ppm of CH 4;
growth pressure: 80-250Torr;
growth power: microwave power 5kW to 70kW;
growth temperature: 900-1300 ℃;
growth rate: 6-500um/hr.
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