CN117438510A - Micro LED device manufacturing method, micro LED device and display device - Google Patents
Micro LED device manufacturing method, micro LED device and display device Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000004888 barrier function Effects 0.000 claims abstract description 125
- 239000002096 quantum dot Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 58
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000011049 filling Methods 0.000 claims abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 claims description 27
- 238000001914 filtration Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000011068 loading method Methods 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims 4
- 230000003287 optical effect Effects 0.000 description 14
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000003086 colorant Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 230000003190 augmentative effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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Abstract
The disclosure provides a micro LED device manufacturing method, a micro LED device and a display device. The method comprises the following steps: providing a transparent substrate and a miniature LED chip; a first barrier layer is arranged on the transparent substrate, and a first contact hole array is arranged on the first barrier layer, so that the first contact holes expose corresponding preset exposed parts on the transparent substrate; setting a second barrier layer on the first barrier layer around the first contact hole and forming a corresponding second contact hole array, so that the first barrier layer around the first contact hole and the second barrier layer around the corresponding second contact hole, and the second contact hole exposes a preset exposure part; filling quantum dots in the second contact hole array to form a quantum dot array; the color conversion structure is aligned with the micro LED chip and heated to a preset temperature to bond with the second barrier layer, wherein the material of the second barrier layer has a preset viscosity when heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
Description
Technical Field
The disclosure relates to the technical field of semiconductor Micro LEDs, in particular to a Micro LED device manufacturing method, a Micro LED device and a display device.
Background
With the continuous pursuit of display technology, display technology is gradually developed towards small size and high resolution, and Micro LEDs are representative of miniaturized display technology. The Micro LED technology is a three-layer technology for miniaturizing, matrixing and thinning an LED chip, and the size of a pixel point is smaller than 50 mu m. At present, full-color display of Micro LEDs can be realized by utilizing a Quantum Dot (QD) material to perform color conversion, which makes the selection, intervention and assistance of the color conversion material and related processes important. However, there are still some problems in bonding the color conversion structure and the micro LED chip, and it is difficult to meet the increasingly severe structure and light blocking requirements caused by the miniaturization of the pixels.
Disclosure of Invention
In order to solve the technical problems mentioned in the background art, the scheme of the disclosure provides a preparation method of a miniature LED device, the miniature LED device and a display device.
According to an aspect of the embodiments of the present disclosure, there is provided a method for manufacturing a micro LED device, wherein the method includes: providing a transparent substrate and a micro LED chip, wherein the micro LED chip comprises a micro LED unit array; a first barrier layer is arranged on the transparent substrate, and a first contact hole array is arranged on the first barrier layer, so that each first contact hole in the first contact hole array exposes a corresponding preset exposure part on the transparent substrate, and a first intermediate structure is obtained; setting a second barrier layer on the first barrier layer around each first contact hole and forming a second contact hole array corresponding to the first contact hole array aiming at the first intermediate structure, so that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, and each second contact hole exposes the corresponding preset exposed part; filling quantum dots in the second contact hole array to form a quantum dot array, so as to obtain a color conversion structure; and aligning and combining the quantum dot array of the color conversion structure with the micro LED unit array of the micro LED chip, and heating the color conversion structure and the micro LED chip to a preset temperature to bond by using the second barrier layer, wherein the material of the second barrier layer has preset viscosity when being heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
Further, for the first intermediate structure, a second barrier layer is disposed on the first barrier layer around each first contact hole and a second contact hole array corresponding to the first contact hole array is formed, so that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, and each second contact hole exposes the corresponding preset exposed portion includes: a second barrier layer is arranged on the first intermediate structure; and forming a second contact hole array on the second barrier layer through photoetching, so that the second contact hole exposes the preset exposed part, and the projection of the second contact hole on the transparent substrate coincides with the projection of the corresponding first contact hole on the transparent substrate.
Further, the first barrier layer comprises a first matting layer and the second barrier layer comprises a second matting layer.
Further, the first matting layer comprises a black photoresist, the material of the second matting layer comprises a positive photoresist, and the positive photoresist is doped with a filter material.
Further, the height of the quantum dot is flush with the height of the second barrier layer, and the micro LED unit array in the micro LED chip is aligned and attached to the quantum dot array.
Further, the second contact hole array comprises a plurality of groups of second contact holes, each group of second contact holes comprises a first sub-hole, a second sub-hole and a third sub-hole, and filling quantum dots in the second contact hole array comprises at least one of the following steps: filling red quantum dots in each first sub-hole; and filling green quantum dots in each second sub-hole.
Further, the transparent substrate comprises a glass substrate, and the structure of the micro LED chip comprises one of a front-loading structure, a flip-chip structure and a vertical structure.
According to another aspect of the present disclosure, a micro LED device is also provided. The micro LED device includes a color conversion structure and a micro LED chip, the color conversion structure including: a transparent substrate; a first barrier layer disposed on the transparent substrate: a second barrier layer disposed on the first barrier layer; the second contact hole array comprises a plurality of second contact holes, the first barrier layer and the second barrier layer surround each second contact hole, and each second contact hole exposes a corresponding preset exposure part on the transparent substrate; the quantum dots in the quantum dot array are filled in the second contact holes of the second contact hole array, the micro LED chip comprises a micro LED unit array, the quantum dot array of the color conversion structure is aligned and combined with the micro LED unit array of the micro LED chip, the color conversion structure and the micro LED chip are bonded together through the second barrier layer, wherein the material of the second barrier layer has preset viscosity when being heated to a preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
Further, the first barrier layer comprises a first matting layer and the second barrier layer comprises a second matting layer.
Further, the first matting layer comprises a black photoresist, the material of the second matting layer comprises a positive photoresist, and the positive photoresist is doped with a filter material.
Further, the height of the quantum dot is flush with the height of the second barrier layer, and the micro LED unit array in the micro LED chip is aligned and attached to the quantum dot array.
Further, the second contact hole array comprises a plurality of groups of second contact holes, each group of second contact holes comprises a first sub-hole, a second sub-hole and a third sub-hole, each first sub-hole is filled with red quantum dots, and each second sub-hole is filled with green quantum dots.
Further, the filter material includes a material for filtering at least one of red light, green light, and blue light.
According to still another aspect of the embodiments of the present disclosure, there is also provided a display device. The display device comprises the micro LED device and a driving substrate.
By the technical scheme, two barrier layers can be sequentially arranged on the transparent substrate, materials of the second barrier layers have preset viscosity when being heated to a preset temperature, the preset temperature is lower than the tolerance temperature of the quantum dots, and therefore the color conversion structure and the micro LED chip can be stably adhered together by utilizing the preset viscosity of the second barrier layers of the color conversion structure, adhesion between the color conversion structure and the micro LED chip by using optical adhesive can be avoided, refraction and total reflection phenomena of light emitted by the micro LED chip in the optical adhesive are eliminated, and light crosstalk phenomena are reduced.
Drawings
The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present disclosure will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present disclosure are illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar or corresponding parts and in which:
fig. 1 is a flow chart illustrating a method of manufacturing a micro LED device according to one embodiment of the present disclosure;
fig. 2 to 10 are schematic views illustrating a manufacturing process flow of a method of manufacturing a micro LED device according to an embodiment of the present disclosure.
Detailed Description
It should be noted that, in the case of no conflict, the embodiments and features in the embodiments may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
It should be noted that the following detailed description is illustrative and is intended to provide further explanation of the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be oriented 90 degrees or at other orientations and the spatially relative descriptors used herein interpreted accordingly.
Exemplary embodiments according to the present disclosure will now be described in more detail with reference to the accompanying drawings. These exemplary embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. It should be appreciated that these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of these exemplary embodiments to those skilled in the art, that in the drawings, thicknesses of layers and regions are exaggerated for clarity, and identical reference numerals are used to denote identical devices, and thus descriptions thereof will be omitted.
In the related art, exciting the quantum dot color conversion layer by using Micro LEDs (Micro LEDs) is one method for realizing full color of the Micro LEDs. Through bonding the array containing quantum dots with the pixels of the light-emitting area of the Micro LEDs in a one-to-one correspondence manner, under the condition that the Micro LEDs and the color conversion layer are bonded and fixed by using optical adhesive in bonding, as the light emitted by the Micro LEDs can reach the surfaces of the quantum dots through the optical adhesive, the light emitted by the Micro LEDs can generate refraction and total reflection phenomena in the optical adhesive due to the fact that the optical adhesive has different refractive indexes, therefore, the light of a certain pixel can lighten the quantum dot materials of surrounding pixels through refraction, finally, the light seen by human eyes can become light formed by mixing various colors, the colors can be off-white, and when the light crosstalk phenomenon is serious, the color purity can be reduced, and the display requirement of bright colors is not met.
The disclosure provides a method for manufacturing a miniature LED device. Referring to fig. 1 to 10, fig. 1 is a flowchart illustrating a method of manufacturing a micro LED device according to one embodiment of the present disclosure; fig. 2 to 10 are schematic views illustrating a manufacturing process flow of a method of manufacturing a micro LED device according to an embodiment of the present disclosure.
In accordance with embodiments of the present disclosure, the pixel size in micro LED devices is typically less than 50 microns.
As shown in fig. 1, the method for manufacturing the micro LED device includes the following steps S101 to S105.
Step S101, providing a transparent substrate and a micro LED chip, wherein the micro LED chip comprises a micro LED unit array.
Step S102, a first barrier layer is arranged on the transparent substrate, and a first contact hole array is arranged on the first barrier layer, so that each first contact hole in the first contact hole array exposes a corresponding preset exposure part on the transparent substrate, and a first intermediate structure is obtained.
Step S103, setting a second barrier layer on the first barrier layer around each first contact hole and forming a second contact hole array corresponding to the first contact hole array aiming at the first intermediate structure, so that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, and each second contact hole exposes the corresponding preset exposed part.
And step S104, filling quantum dots in the second contact hole array to form a quantum dot array, thereby obtaining the color conversion structure.
And S105, aligning and combining the quantum dot array of the color conversion structure and the micro LED unit array of the micro LED chip, and heating the color conversion structure and the micro LED chip to a preset temperature to bond by using the second barrier layer, wherein the material of the second barrier layer has preset viscosity when being heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
According to the technical scheme, two barrier layers can be sequentially arranged on the transparent substrate, the material of the second barrier layer has preset viscosity when being heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots, so that the color conversion structure and the micro LED chip can be stably adhered together by utilizing the preset viscosity of the second barrier layer of the color conversion structure, the adhesion between the color conversion structure and the micro LED chip by using optical adhesive can be avoided, and the refraction and total reflection phenomena of light emitted by the micro LED chip in the optical adhesive are eliminated, so that the light crosstalk phenomenon is reduced.
In step S101, a transparent substrate and a micro LED chip including an array of micro LED units may be provided.
According to the embodiments of the present disclosure, a micro LED chip for light emission may be obtained first and a color conversion structure may be prepared. Wherein the micro LED chip is any micro LED chip suitable for manufacturing micro LED devices. It is noted that the micro LED chip may also be obtained in any step prior to the subsequent step of using the micro LED chip. Further, in order to prepare the color conversion structure, a transparent substrate for preparing the color conversion structure is required.
Further, the transparent substrate may include a glass substrate, a sapphire substrate, etc., so that after the prepared color conversion structure is assembled and connected with the micro LED chip, light generated by the light excitation quantum dots emitted by the micro LED chip can be emitted through the transparent substrate. The structure of the micro LED chip may include a front-loading structure, a flip-chip structure, a vertical structure, or the like, without limitation.
Referring to fig. 2-10, wherein fig. 2 illustrates a side view of a transparent substrate 101 according to one embodiment of the present disclosure. As shown in fig. 2, the transparent substrate 101 may be, for example, a glass substrate, and the thickness of the glass substrate may be, for example, about 200 μm.
In step S102, a first barrier layer may be disposed on the transparent substrate, and a first contact hole array may be disposed on the first barrier layer, so that each first contact hole in the first contact hole array exposes a corresponding preset exposed portion on the transparent substrate, thereby obtaining a first intermediate structure.
According to an embodiment of the present disclosure, after obtaining the transparent substrate, a first barrier layer may be disposed on the transparent substrate. The first barrier layer may comprise a first matting layer which may comprise any suitable material such as black photoresist.
Referring to fig. 2-10, fig. 3 illustrates a side view of a first barrier layer 102 disposed on a transparent substrate 101 according to one embodiment of the present disclosure. As shown in fig. 3, the first barrier layer 102 may be, for example, a black photoresist, so that a transparent substrate 101, such as a glass substrate, having a thickness of about 200 μm may be coated with, for example, a black photoresist having a thickness of about 2 μm by spin coating, to obtain the structure shown in fig. 3.
And then, a first contact hole array is formed on the first barrier layer through photoetching, so that each first contact hole in the first contact hole array exposes a corresponding preset exposed part on the transparent substrate, and a first intermediate structure is obtained.
According to an embodiment of the present disclosure, after the first barrier layer is disposed on the transparent substrate, the first contact hole array corresponding to the micro LED unit (light emitting unit) array may be opened on the first barrier layer, so that each first contact hole exposes a preset exposed portion of the transparent substrate corresponding to the micro LED unit, and there is a remaining first barrier layer around each first contact hole.
Further, referring to fig. 2 to 10, fig. 4 shows a schematic side view of the first contact hole 1021 opened on the first barrier layer 102. Specifically, first contact hole arrays, for example, having a diameter of 7 μm, may be first etched on the first barrier layer 102, for example, black photoresist, using a photolithography technique, and adjacent first contact holes 1021 have a center-to-center spacing of, for example, 12.5 μm, thereby obtaining the first intermediate structure 10 as shown in fig. 4. The first barrier layer 102, such as black photoresist, may make the screen black when the display device is powered off or turned off.
In step S103, for the first intermediate structure, a second barrier layer may be disposed on the first barrier layer around each first contact hole and a second contact hole array corresponding to the first contact hole array may be formed, so that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, and each second contact hole exposes the corresponding preset exposed portion.
According to an embodiment of the present disclosure, after the first intermediate structure is obtained, a second barrier layer may be disposed on the first barrier layer around the first contact hole of the first intermediate structure and the second contact hole may be formed. The second contact holes in the second contact hole array are in one-to-one correspondence with the first contact holes in the first contact hole array and expose the first contact holes.
Further, for the first intermediate structure, disposing a second barrier layer on the first barrier layer around each first contact hole and forming a second contact hole array corresponding to the first contact hole array, such that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, each second contact hole exposing the corresponding preset exposed portion may include: a second barrier layer is arranged on the first intermediate structure; and forming a second contact hole array on the second barrier layer through photoetching, so that the second contact hole exposes the preset exposed part, and the projection of the second contact hole on the transparent substrate coincides with the projection of the corresponding first contact hole on the transparent substrate.
According to an embodiment of the present disclosure, the second barrier layer may include a second matting layer, a material of the second matting layer may include a positive photoresist, and the positive photoresist is doped with a filter material. The positive photoresist has a preset viscosity when heated to a preset temperature that is lower than the withstand temperature of the quantum dots. The subsequent color conversion structure can be directly bonded to the micro LED chip by heating the positive photoresist without damaging the quantum dots due to an excessive heating temperature. The filter material includes a material that filters light of a preset wavelength, for example, includes a material that filters red light, a material that filters green light, and a material that filters blue light. By the red light filtering material, the green light filtering material, and the blue light filtering material, optical crosstalk between the quantum dots can be reduced by the light filtering material when the quantum dots are red quantum dots and green quantum dots excited by blue light, or optical crosstalk between the quantum dots can be reduced by the light filtering material when the quantum dots include red quantum dots, green quantum dots, and blue quantum dots. Of course the filter material may also comprise materials that filter other colors of light, as desired.
Referring to fig. 2-10, fig. 5 illustrates a side cross-sectional view of a second barrier layer 103 disposed on the first intermediate structure 10. Specifically, as shown in fig. 5, a second barrier layer 103, such as a positive photoresist, for example, having a thickness of about 2 to 8 μm may be coated on the upper surface of the first intermediate structure 10 by spin coating. As described above, the positive photoresist may be doped with a filter material, which may include a material that filters light of a preset wavelength, for example, a material that filters red light, a material that filters green light, and a material that filters blue light. By the material for filtering red light, the material for filtering green light and the material for filtering blue light, the optical crosstalk between the quantum dots can be reduced by the optical filter material when the quantum dots are red quantum dots and green quantum dots excited by blue light, or the optical crosstalk between the quantum dots can be reduced by the optical filter material when the quantum dots include red quantum dots, green quantum dots and blue quantum dots.
Referring to fig. 2 to 10, fig. 6 is a schematic side view illustrating a second contact hole 1031 formed in the second barrier layer 103. Specifically, an array of second contact holes 1031, for example, having a diameter of 7 μm, corresponding to the first contact holes, may be first lithographically formed on the second barrier layer 103, such as the above-described positive photoresist having a predetermined viscosity and including a filter material, using a photolithographic technique, with the center-to-center spacing of adjacent second contact holes 1031 being, for example, 12.5 μm, thereby obtaining the structure shown in fig. 6. The second contact hole 1031 exposes a preset exposed portion on the transparent substrate, and a projection of the second contact hole 1031 on the transparent substrate coincides with a projection of the corresponding first contact hole on the transparent substrate.
In step S104, the second contact hole array may be filled with quantum dots to form a quantum dot array, thereby obtaining a color conversion structure.
According to embodiments of the present disclosure, after the second contact hole array described above is obtained, quantum dots may be filled for the second contact hole array.
Further, the second contact hole array comprises a plurality of groups of second contact holes, each group of second contact holes comprises a first sub-hole, a second sub-hole and a third sub-hole, and filling quantum dots in the second contact hole array comprises at least one of the following steps: filling red quantum dots in each first sub-hole; and filling green quantum dots in each second sub-hole. In some embodiments, blue quantum dots may be filled in each third sub-aperture; in other embodiments, the micro LED unit array of the micro LED chip emits blue light, and each third sub-hole may be filled with a transparent material or not filled with a material.
According to the embodiment of the disclosure, the height of the quantum dot is flush with the height of the second barrier layer, and the micro LED unit array in the micro LED chip is attached to the quantum dot array. The height of the quantum dots and the height of the second barrier layer are set to be flush, so that the micro LED unit array in the micro LED chip is attached to the quantum dot array, light emitted by the micro LED unit can directly enter the quantum dots without any medium, and light crosstalk caused by the medium between the micro LED unit and the quantum dots can be avoided.
Referring to fig. 2-10, fig. 7 shows a schematic side view of red quantum dots 1041 filled in the second contact hole. As shown in fig. 7, first, red quantum dots 1041, which are II-VI group quantum dots, are filled in the first sub-holes in the second contact hole, and then ultraviolet cured, thereby obtaining the structure shown in fig. 7.
Referring to fig. 2-10, fig. 8 shows a schematic side view of green quantum dots 1042 filled in the second contact holes. As shown in fig. 8, first, green quantum dots 1042 are filled in the second sub-holes in the second contact hole, the green quantum dots are II-VI group quantum dots, and then ultraviolet curing is performed to obtain the structure shown in fig. 8.
Referring to fig. 2-10, fig. 9 shows a schematic side view of the transparent material 1043 filled in the second contact hole. As shown in fig. 9, the third sub-hole in the second contact hole is first filled with a transparent material 1043, which may be any suitable material, and then cured by ultraviolet light to obtain the color conversion structure 20 as shown in fig. 9.
In step S105, the quantum dot array of the color conversion structure and the micro LED unit array of the micro LED chip may be aligned and combined, and the color conversion structure and the micro LED chip may be heated to a preset temperature to bond with the second barrier layer, wherein the material of the second barrier layer has a preset viscosity when heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dot.
According to embodiments of the present disclosure, after the above-described color conversion structure is obtained, the color conversion structure may be bonded to the micro LED chip. Firstly, the color conversion structure and the micro LED chip can be aligned and spliced together to form a whole, then the whole is heated, when the whole is heated to a preset temperature, the second barrier layer in the color conversion structure is softened and reaches preset viscosity, and the softened second barrier layer is bonded with the micro LED chip in an adhesion way, so that the color conversion structure and the micro LED chip are bonded together. It is noted that the predetermined temperature for softening the second barrier layer of the color conversion structure can be lower than the tolerance temperature of the quantum dot by selecting the material, so that the quantum dot is not damaged.
Referring to fig. 2-10, fig. 10 shows a schematic side view of a color conversion structure 20 and a micro LED chip 30 bonded together. As shown in fig. 10, the color conversion structure 20 is turned over first so that the quantum dot side of the color conversion structure 20 faces the micro LED unit 31 (light emitting unit) side of the micro LED chip 30, then the color conversion structure 20 is aligned and split with the micro LED chip 30, specifically, the quantum dots of the color conversion structure 20 are aligned with the micro LED units of the micro LED chip 30 one by one, then the split color conversion structure 20 and the micro LED chip 30 are heated, and when heated to a preset temperature, the second barrier layer 103 of the color conversion structure 20 is softened and bonded with the micro LED chip. The preset temperature is less than the tolerance temperature of the quantum dot, so that the quantum dot is not damaged. And as shown in fig. 10, the height of the quantum dot is flush with the height of the second barrier layer 103, and the micro LED unit 31 in the micro LED chip 30 is attached to the quantum dot, so that the light emitted by the micro LED unit 31 directly enters the quantum dot without any medium, and the light crosstalk phenomenon caused by the medium between the micro LED unit and the quantum dot can be avoided.
Thus, micro LED device fabrication is completed, and fig. 10 shows a fabricated micro LED device 1 according to one embodiment of the present disclosure.
The present disclosure also provides a micro LED device.
As shown in fig. 2-10, the micro LED device 1 may include a color conversion structure 20 and a micro LED chip 30. The color conversion structure 20 may include: a transparent substrate 101; a first barrier layer 102 provided on the transparent substrate 101: a second barrier layer 103 disposed on the first barrier layer 102; a second contact hole array, wherein the first barrier layer 102 and the second barrier layer 103 surround each second contact hole 1031, and each second contact hole 1031 exposes a corresponding predetermined exposed portion on the transparent substrate 101; the quantum dots in the quantum dot array are filled in the second contact holes 1031 of the second contact hole array, the micro LED chip 30 comprises a micro LED unit array, the quantum dot array of the color conversion structure is aligned and combined with the micro LED unit array of the micro LED chip, and the color conversion structure 20 and the micro LED chip 30 are bonded together by using the second barrier layer 103, wherein the material of the second barrier layer 103 has preset viscosity when being heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
According to an embodiment of the present disclosure, the first barrier layer 102 comprises a first matting layer and the second barrier layer 103 comprises a second matting layer.
According to an embodiment of the present disclosure, the first matting layer comprises a black photoresist, the material of the second matting layer comprises a positive photoresist, and the positive photoresist is doped with a filter material.
According to the embodiment of the disclosure, the height of the quantum dot is flush with the height of the second barrier layer 103, and the micro LED unit array in the micro LED chip 30 is aligned and attached to the quantum dot array.
According to an embodiment of the disclosure, the second contact hole array includes a plurality of groups of second contact holes, each group of second contact holes includes a first sub-hole, a second sub-hole, and a third sub-hole, each first sub-hole is filled with red quantum dots 1041, and each second sub-hole is filled with green quantum dots 1042.
According to an embodiment of the present disclosure, the filter material includes a material for filtering at least one of red light, green light, and blue light.
It is noted that any of the relevant descriptions (including but not limited to technical features and their roles, explanations, etc.) regarding micro LED devices in the above-described micro LED device manufacturing method can be applied to the micro LED device of the present disclosure.
The disclosure also provides a display device. The display device comprises the micro LED device and a driving substrate.
According to embodiments of the present disclosure, each micro LED unit in the micro LED chip may sequentially include a first semiconductor layer such as an N-GaN layer, a multi-quantum well structure, and a second semiconductor layer such as a P-GaN layer, and the micro LED unit includes a cathode and an anode. The micro LED chip is bonded to an electrode pad on the driving substrate through the cathode and the anode.
The display device can be applied to flexible electronic equipment to realize technologies such as augmented Reality (Augmented Reality, AR), virtual Reality (VR), extended Reality (XR), mixed Reality (MR) and the like. For example, the Display device may be a projection portion of an electronic apparatus, such as a projector, head Up Display (HUD), or the like; for another example, the display device may be a display portion of an electronic apparatus, and for example, the electronic apparatus may include: smart phones, smart watches, notebook computers, tablet computers, automobile recorders, navigator, head-mounted devices, and any device having a display screen.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments in accordance with the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in various embodiments of the present application, the sequence number of each step/process described above does not mean that the execution sequence of each step/process should be determined by the function and the internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application. Moreover, the foregoing description of the embodiment numbers is only for the purpose of description, and does not represent the advantages or disadvantages of the embodiments.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the present application described herein may be capable of being practiced otherwise than as specifically illustrated and described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The foregoing description of the preferred embodiments of the present disclosure is provided only and not intended to limit the disclosure so that various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
Claims (14)
1. A method of manufacturing a micro LED device, wherein the method comprises:
providing a transparent substrate and a micro LED chip, wherein the micro LED chip comprises a micro LED unit array;
a first barrier layer is arranged on the transparent substrate, and a first contact hole array is arranged on the first barrier layer, so that each first contact hole in the first contact hole array exposes a corresponding preset exposure part on the transparent substrate, and a first intermediate structure is obtained;
setting a second barrier layer on the first barrier layer around each first contact hole and forming a second contact hole array corresponding to the first contact hole array aiming at the first intermediate structure, so that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, and each second contact hole exposes the corresponding preset exposed part;
filling quantum dots in the second contact hole array to form a quantum dot array, so as to obtain a color conversion structure;
and aligning and combining the quantum dot array of the color conversion structure with the micro LED unit array of the micro LED chip, and heating the color conversion structure and the micro LED chip to a preset temperature to bond by using the second barrier layer, wherein the material of the second barrier layer has preset viscosity when being heated to the preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
2. The method of manufacturing a micro LED device according to claim 1, wherein, for the first intermediate structure, a second barrier layer is disposed on the first barrier layer around each first contact hole and a second contact hole array corresponding to the first contact hole array is formed such that the first barrier layer around each first contact hole and the second barrier layer around the corresponding second contact hole, each second contact hole exposing the corresponding preset exposed portion comprises:
a second barrier layer is arranged on the first intermediate structure;
and forming a second contact hole array on the second barrier layer through photoetching, so that the second contact hole exposes the preset exposed part, and the projection of the second contact hole on the transparent substrate coincides with the projection of the corresponding first contact hole on the transparent substrate.
3. The method of manufacturing a micro LED device of claim 1, wherein the first barrier layer comprises a first extinction layer and the second barrier layer comprises a second extinction layer.
4. A method of fabricating a micro-LED device according to claim 3, wherein the first matting layer comprises a black photoresist, the material of the second matting layer comprises a positive photoresist, and the positive photoresist is doped with a filter material.
5. The method for manufacturing a micro LED device according to claim 1, wherein the height of the quantum dot is flush with the height of the second barrier layer, and the array of micro LED units in the micro LED chip is aligned and attached to the array of quantum dots.
6. The method of manufacturing a micro LED device of claim 1, wherein the second contact hole array comprises a plurality of sets of second contact holes, each set of second contact holes comprising a first sub-hole, a second sub-hole, and a third sub-hole, and filling quantum dots in the second contact hole array comprises at least one of:
filling red quantum dots in each first sub-hole;
and filling green quantum dots in each second sub-hole.
7. The method of manufacturing a micro LED device according to any one of claims 1 to 6, wherein the transparent substrate comprises a glass substrate, and the structure of the micro LED chip comprises one of a front-loading structure, a flip-chip structure, and a vertical structure.
8. A micro LED device, wherein the micro LED device comprises a color conversion structure and a micro LED chip, the color conversion structure comprising:
a transparent substrate;
a first barrier layer disposed on the transparent substrate:
a second barrier layer disposed on the first barrier layer;
the second contact hole array comprises a plurality of second contact holes, the first barrier layer and the second barrier layer surround each second contact hole, and each second contact hole exposes a corresponding preset exposure part on the transparent substrate;
a quantum dot array, wherein quantum dots in the quantum dot array are filled in second contact holes of the second contact hole array;
the micro LED chip comprises a micro LED unit array, the quantum dot array of the color conversion structure is aligned with the micro LED unit array of the micro LED chip, the color conversion structure and the micro LED chip are bonded together by utilizing the second barrier layer, wherein the material of the second barrier layer has preset viscosity when being heated to a preset temperature, and the preset temperature is lower than the tolerance temperature of the quantum dots.
9. The micro LED device of claim 8, wherein the first barrier layer comprises a first extinction layer and the second barrier layer comprises a second extinction layer.
10. The micro LED device of claim 9, wherein the first matting layer comprises a black photoresist, the material of the second matting layer comprises a positive photoresist, and the positive photoresist is doped with a filter material.
11. The micro LED device of claim 8, wherein the height of the quantum dots is flush with the height of the second barrier layer, and the array of micro LED units in the micro LED chip is in alignment fit with the array of quantum dots.
12. The micro LED device of claim 8, wherein the second contact hole array comprises a plurality of sets of second contact holes, each set of second contact holes comprising a first sub-hole, a second sub-hole, and a third sub-hole, each first sub-hole filled with red quantum dots, and each second sub-hole filled with green quantum dots.
13. The micro LED device of claim 10, wherein the filter material comprises a material for filtering at least one of red, green, and blue light.
14. A display apparatus, wherein the display apparatus comprises the micro LED device of any one of claims 8 to 13 and a drive substrate.
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