CN117438290A - Semiconductor production method and apparatus therefor - Google Patents
Semiconductor production method and apparatus therefor Download PDFInfo
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- CN117438290A CN117438290A CN202210826204.5A CN202210826204A CN117438290A CN 117438290 A CN117438290 A CN 117438290A CN 202210826204 A CN202210826204 A CN 202210826204A CN 117438290 A CN117438290 A CN 117438290A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000000243 solution Substances 0.000 claims abstract description 63
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 35
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 35
- 239000007921 spray Substances 0.000 claims abstract description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 20
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 18
- 238000011010 flushing procedure Methods 0.000 claims abstract description 15
- 239000003929 acidic solution Substances 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 230000003068 static effect Effects 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 44
- 239000007788 liquid Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000001459 lithography Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 8
- 230000007246 mechanism Effects 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 35
- 238000002360 preparation method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 231
- 239000007789 gas Substances 0.000 description 34
- 239000010410 layer Substances 0.000 description 32
- 238000000206 photolithography Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000001816 cooling Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 7
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 6
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- 238000004026 adhesive bonding Methods 0.000 description 3
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- 229910052739 hydrogen Inorganic materials 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 239000012495 reaction gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a semiconductor production method and equipment thereof, which relate to the technical field of semiconductor preparation technology and are used for solving the technical problem of large alignment error of a wafer in a photoetching process, wherein the semiconductor production equipment comprises a wafer bearing table, a brush head and a driving device, the wafer bearing table is used for placing the wafer to be coated with photoetching, a flushing pipeline and a spray head communicated with the flushing pipeline are arranged on the brush head, and the spray head is arranged on one side of the brush head facing the wafer back of the wafer so as to spray an electrostatic removing solution to the wafer, wherein the electrostatic removing solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas; the driving device is connected with the wafer carrying table and is configured to drive the wafer carrying table to rotate around the axis thereof in the photoetching coating process so as to enable the brush head to pass through different positions in the circumferential direction of the wafer. The invention can reduce the overlay error of the wafer in the photoetching process, thereby improving the yield of the semiconductor structure.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor production method and equipment thereof.
Background
In the semiconductor manufacturing process, photolithography is one of the important steps in the manufacturing process, and the essence of photolithography is to copy a circuit structure onto a wafer film that is to be subjected to an etching step and an ion implantation step later.
In the related art, when a wafer is subjected to photolithography, an anti-reflection coating layer is first coated on the wafer to prevent light reflection of the wafer, and then the wafer is spun and glued, i.e., a photoresist layer is coated on the wafer to expose the wafer, and after the photoresist layer is patterned, the wafer is etched or ion implanted according to the pattern.
However, in the related art, the overlay error of the wafer during the photolithography process is large, which results in a technical problem of low yield of the fabricated semiconductor structure.
Disclosure of Invention
In view of the above, embodiments of the present invention provide a semiconductor manufacturing method and apparatus thereof, which can reduce the overlay error of a wafer in a photolithography process, thereby improving the yield of a semiconductor structure.
In order to achieve the above object, the embodiment of the present invention provides the following technical solutions:
a first aspect of an embodiment of the present invention provides a semiconductor production apparatus, including: the wafer bearing table is used for placing a wafer; the device comprises a brush head, a cleaning pipe and a spray head, wherein the brush head is provided with the cleaning pipe and the spray head is communicated with the cleaning pipe, and the spray head is arranged on one side of the brush head facing the back of the wafer so as to spray a static removing solution to the wafer, wherein the static removing solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas; the driving device is connected with the wafer carrying table and is configured to drive the wafer carrying table to rotate around the axis of the wafer carrying table in the photoetching coating process so that the brush head passes through different positions in the circumferential direction of the wafer.
In some embodiments, the spray head has a predetermined angle with the central axis of the brush head.
In some embodiments, the preset included angle between the spray head and the central axis of the brush head is 30-60 degrees.
In some embodiments, the flush line is disposed in a central location of the brush head.
In some embodiments, the number of the spray heads is at least two, and at least two spray heads are arranged at intervals in the circumferential direction of the brush head.
In some embodiments, a liquid supply line is also included, the liquid supply line including a liquid line and a carbon dioxide gas line, an outlet of the carbon dioxide gas line being in communication with an outlet of the liquid line and in communication with an inlet of the flush line.
In some embodiments, a pressurizing device is further included, the pressurizing device being disposed on the carbon dioxide gas line.
In some embodiments, the semiconductor production apparatus further comprises a plasma reaction device having a reaction chamber, the wafer carrier is disposed within the reaction chamber, and a conductive layer is disposed within the reaction chamber, the conductive layer being connected to a chamber wall of the reaction chamber and configured to conduct electrostatic charges on the wafer.
In some embodiments, the semiconductor production apparatus further comprises a ground line, and the conductive layer is located directly above the wafer to be etched and connected to the ground line.
In some embodiments, the conductive layer is a metallic conductive mesh.
In some embodiments, the semiconductor production apparatus further comprises a lifting mechanism coupled to the conductive layer, the lifting mechanism configured to drive the conductive layer to move up and down in a direction toward or away from the wafer.
In some embodiments, the plasma reaction device is provided with an air inlet channel and an air knife channel which are communicated with the reaction cavity, and an outlet of the air inlet channel is positioned at the top of the reaction cavity; the air knife channel is arranged on the circumference of the plasma reaction device and communicated with the outside air.
A second aspect of an embodiment of the present invention provides a semiconductor production method, including:
placing a wafer to be coated with lithography on a wafer carrying table;
providing a spin-coating material to the surface of the wafer, and spraying a static eliminating solution to the wafer in the coating stage of the wafer so that the static eliminating solution washes the surface of the wafer and removes static charges generated on the surface of the wafer; the static eliminating solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas.
In some embodiments, the spraying the static-removing solution onto the wafer during the coating stage of the wafer specifically includes:
after each wafer rotates for one circle, stopping the wafer from rotating and continuously maintaining for a preset period of time;
and flushing the wafer through the static eliminating solution within the preset time.
Compared with the related art, the semiconductor production equipment provided by the invention has at least the following advantages:
the invention provides semiconductor production equipment which comprises a wafer bearing table, a brush head and a driving device, wherein the wafer bearing table is used for placing a wafer, a flushing pipeline and a spray head communicated with the flushing pipeline are arranged on the brush head, the spray head is arranged on one side of the brush head facing the wafer back of the wafer so as to spray a static removing solution to the wafer, and the static removing solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas; the driving device is connected with the wafer carrying table and is configured to drive the wafer carrying table to rotate around the axis thereof in the photoetching coating process so as to enable the brush head to pass through different positions in the circumferential direction of the wafer. Through the scheme, the electrostatic charges generated by the wafer due to physical friction and other factors can be removed in the wafer photoetching process, so that the temporary deformation of the wafer caused by the accumulation of the electrostatic charges on the surface of the wafer is avoided, the overlay error of the wafer in the photoetching process can be reduced, and the yield of the semiconductor structure is further improved.
The semiconductor production method provided by the invention has the same beneficial effects as the above embodiment and is not repeated here.
In addition to the technical problems, technical features constituting the technical solutions, and beneficial effects caused by the technical features of the technical solutions described above, other technical problems that can be solved by the semiconductor production method and the apparatus thereof, other technical features included in the technical solutions, and beneficial effects caused by the technical features provided by the embodiments of the present invention will be described in further detail in the detailed description of the present invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present invention;
fig. 2 is a schematic view of a part of a semiconductor manufacturing apparatus according to a first embodiment of the present invention;
fig. 3 is a schematic structural diagram of a brush head in a semiconductor manufacturing apparatus according to a first embodiment of the present invention;
fig. 4 is a schematic structural diagram of a cooling device in a semiconductor manufacturing apparatus according to a first embodiment of the present invention;
fig. 5 is a flow chart of a semiconductor manufacturing method according to a second embodiment of the invention.
Reference numerals:
100-semiconductor production equipment;
110-wafer carrier;
120-brush head;
121-a spray head;
122-flushing the pipeline;
130-a liquid supply pipeline;
131-a liquid line;
132-carbon dioxide gas line;
140-supercharging device;
150-a control valve;
151-a first control valve;
152-a second control valve;
153-a third control valve;
160-a plasma reaction device;
161-reaction chamber;
162-conductive layer;
163-intake passage;
164-air knife channel;
200-wafer.
Detailed Description
A wafer refers to a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because the wafer is circular in shape; various circuit element structures can be fabricated on silicon wafers to become IC products with specific electrical functions. Etching is one of the steps of fabricating a wafer into a circuit element structure, typically by exposing a photoresist to light by photolithography, then selectively removing unwanted material from the surface of the silicon wafer by chemical or physical means, and copying a mask image onto the glued silicon wafer to form the corresponding circuit element structure.
The overlay error is that the photoetching machine exposes all fields on the silicon wafer one by one in the etching process, then the silicon wafer is replaced until all the silicon wafers are exposed, when the process treatment of the silicon wafer is finished, the mask is replaced, and then a second layer of patterns is exposed on the silicon wafer, namely re-exposure is carried out. The image exposed by the second layer mask must be accurately nested with the image exposed by the first layer mask, which is called overlay. Theoretically, the pattern exposed by the first layer of mask and the pattern exposed by the second layer of mask should be completely aligned and overlapped, and then the overlay error is zero; however, in practice, the mask deformation, the deformation of the wafer itself, the distortion of the projection lens system of the lithography machine, the uneven movement of the wafer carrying table, etc. all cause the deviation of the positions of the two patterns, and the alignment deviation occurs, thereby causing the overlay error.
The inventor of the invention finds that in the actual working process, in the photoetching process, static charges which are unevenly distributed are easily generated on the surface of a wafer due to physical friction between a brush head for rotary gluing and the wafer; or, the wafer surface is cleaned by water or the particles of the contaminants remained on the wafer surface are easy to generate electrostatic charges, and if the electrostatic charges generated on the wafer surface are not eliminated before the wafer exposure process, the electrostatic charges accumulated on the wafer surface can cause temporary deformation of the wafer, thus, the exposed pattern is offset and the like, and the exposed pattern is inaccurate, so that the overlay error of the wafer in the photoetching process is large, and the technical problems of low yield of the manufactured semiconductor structure and the like are caused.
In order to solve the above problems, embodiments of the present invention provide a method and an apparatus for manufacturing a semiconductor, which can remove electrostatic charges generated by a wafer in a coating lithography process, so as to avoid temporary deformation of the wafer caused by the electrostatic charges, thereby reducing overlay errors of the wafer in the lithography process, and further improving yield of semiconductor structures.
In order to make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Fig. 1 is a schematic structural diagram of a semiconductor manufacturing apparatus according to a first embodiment of the present invention; fig. 2 is a schematic view of a part of a semiconductor manufacturing apparatus according to a first embodiment of the present invention; fig. 3 is a schematic structural diagram of a brush head of a semiconductor manufacturing apparatus according to an embodiment of the present invention. Referring to fig. 1 to 3, the semiconductor production apparatus 100 provided by the present invention may be an integrated machine formed by connecting a coater and a photoetching machine, that is, the semiconductor production apparatus 100 has a coating function and a photoetching function, so that the cyclic operations of gluing, exposing, developing, etc. can be completed at a high speed.
The semiconductor production apparatus 100 provided in the embodiment of the invention includes a wafer carrier 110, on which a wafer 200 to be coated with lithography, that is, the wafer 200 to be coated with lithography, is fixedly placed on the wafer carrier 110.
The semiconductor production apparatus 100 further includes a brush head 120 and a driving device (not shown in the figure), where the driving device is connected to the wafer carrier 110, so that in the process of photolithography coating, the driving device drives the wafer carrier 110 to rotate around its own axis, so that the brush head 120 may pass through different positions in the circumferential direction of the wafer 200, and in this way, the wafer carrier 110 drives the wafer 200 placed on the wafer carrier 110 to rotate together, so that the brush head 120 rotates relative to the wafer 200, and the brush head 120 can spin and glue the wafer back of the wafer 200 placed on the wafer carrier 110, so as to form a photoresist layer on the wafer back of the wafer 200, so that the photoresist layer is exposed, developed, and subjected to photolithography processes, so as to make the wafer 200 into a semiconductor structure with a corresponding pattern. Wherein the driving device can be a driving motor.
In the coating lithography process of the wafer 200, considering that the brush head 120 is prone to generate uneven electrostatic charges on the wafer back surface of the wafer 200 due to physical friction between the brush head 120 and the wafer 200 during spin coating, the electrostatic charges accumulated on the surface of the wafer 200 may cause temporary deformation of the wafer 200, so that an overlay error of the wafer 200 in the lithography process is large, and a yield of a semiconductor structure to be manufactured later is low.
In the above-mentioned scheme, through setting up the washing pipeline 122 and with wash at least two shower nozzles 121 that pipeline 122 is linked together on the brush head 120, shower nozzle 121 sets up in the one side of the back of the wafer 200 that the brush head 120 faces wafer 200 for shower nozzle 121 can spray the static solution that removes to wafer 200, removes static solution and can take away the static charge on wafer 200 surface, makes the static charge that wafer 200 surface accumulated can be clear away, avoids the temporary deformation of wafer 200 because of static causes, thereby reduces the alignment error of wafer 200 in the coating photolithography process, and then improves the yield of semiconductor structure.
In addition, the static-removing solution sprayed from the spray head 121 can also take away static charges on the wafer carrier 110 and other machines in the semiconductor production equipment 100, etching particles generated in the photolithography process, etching residues on the surface of the wafer 200 and other adsorbed pollution particles, so that the cleanliness of the wafer carrier 110 and other machines can be improved, and pollution to the wafer 200, the wafer carrier 110 and the like is avoided.
In some embodiments, the static-removing solution may be capable of performing an electronic reaction with the static charges on the surface of the wafer 200, the wafer carrier 110, or the like, so as to remove the static charges through the electronic reaction, thereby achieving the purpose of removing the static charges.
In some embodiments, the static-removing solution may be an acidic solution capable of electronically reacting with the electrostatic charge to remove the electrostatic charge through the acidic solution capable of electronically reacting with the electrostatic charge.
In some embodiments, the static eliminating solution may be a carbonic acid solution with a preset concentration formed by mixing carbon dioxide gas and deionized water, that is, a carbonic acid solution with a preset concentration formed by dissolving carbon dioxide gas into deionized water, where the static eliminating charge of the formed carbonic acid solution can be specifically shown as the following reaction formula:
H 2 O+CO 2 ＝H 2 CO 3 (1)
H 2 CO 3 ＝H + +HCO 3 - (2)
HCO3 - ＝H + +CO 3 2- (3)
H + +e - ＝H (4)
wherein e - Is an electrostatic charge generated on the surface of the wafer 200.
As can be seen from the reaction formula (1), when carbon dioxide gas (CO 2 ) Dissolving into deionized water (such as purified water H 2 O) can form a carbonic acid solution (H) 2 CO 3 ) As is clear from the reaction formula (2), the carbonic acid solution can separate hydrogen ions(H + ) And bicarbonate ion (HCO) 3 - ) As can be seen from the reaction formula (3), hydrogen Carbonate (HCO) 3 - ) Can further separate hydrogen ions (H) + ) And carbonic acid ions (CO) 3 - ) As is clear from the reaction formula (4), hydrogen ion (H) + ) Can react with the electrostatic charge to form hydrogen element, thereby achieving the purpose of removing the electrostatic charge.
The concentration of the carbonic acid solution formed by the carbon dioxide gas and the deionized water can be adaptively designed according to actual requirements, and the embodiment of the invention is not particularly limited.
In other embodiments, the static-removing solution may be other acidic solutions, so long as the acidic solution can react with the static charges electronically to remove the static charges generated on the surface of the wafer 200, and the method is not limited herein.
In order to improve the efficiency of removing the electrostatic charges, in the embodiment of the present invention, a plurality of nozzles 121 for spraying the electrostatic removing solution on the brush head 120 may be provided, and a plurality of nozzles 121 may be disposed on the brush head 120 at intervals, so that the rinsing area of the surface of the wafer 200 rinsed by the electrostatic removing solution may be increased within a preset time, so that the electrostatic charges generated by the electrostatic removing solution can be quickly taken away.
In some embodiments, a preset included angle is formed between the nozzle 121 and the central axis of the brush head 120 (i.e. the vertical axis when the brush head 120 is vertically placed), so that the static electricity removing solution sprayed from the nozzle 121 can wash out the particles such as the static electricity charges and etching residues on the surface of the wafer 200, thereby improving the removal efficiency of the particles such as the static electricity charges and the etching residues.
For example, the preset included angle between the nozzle 121 and the central axis of the brush head 120 may be, for example, 30 ° to 60 °, for example, the preset included angle between the nozzle 121 and the central axis of the brush head 120 may be 30 °, 45 °, 60 °, or the like, where the preset included angles between different nozzles 121 and the central axis of the brush head 120 may be different, so that different nozzles 121 may flush different positions of the wafer 200, thereby increasing the area of the surface of the wafer 200 that the nozzle 121 may flush.
It can be appreciated that by making the included angles between the central axes of the shower nozzles 121 and the brush head 120 different, the rinsing distance between each shower nozzle 121 and the surface of the wafer 200 can be adjusted to be different, so that the preset included angle between each shower nozzle 121 and the central axis of the brush head 120 can be adaptively designed according to actual requirements, which is not limited herein.
In some embodiments, in fig. 2, the flushing pipeline 122 is disposed at the center of the brush head 120, and at least two nozzles 121 are respectively communicated with the flushing pipeline 122 and have a preset included angle (as shown in fig. 3) with the flushing pipeline 122, where the preset included angle between each nozzle 121 and the central axis of the brush head 120 may be denoted by α, and the value of the preset included angle α between each nozzle 121 and the central axis of the brush head 120 may be different, so that the static-removing solution sprayed by the brush head 120 can be flushed outwards from the center of the brush head 120, and accumulation of static charges, etching residues and the like remaining at the center of the wafer 200 may be avoided, thereby improving the cleanliness of the wafer 200.
The flushing pipeline 122 is disposed at a central position of the brush head 120, and the at least two nozzles 121 are arranged at intervals in a circumferential direction of the brush head 120 with the center of the brush head 120 as a center, for example, the at least two brush heads 120 are uniformly arranged in the circumferential direction of the brush head 120 with the center of one brush head 120 as a center, so that the static eliminating solution sprayed from the at least two nozzles 121 can flush the entire surface of the wafer 200 from the center to the outside in sequence, so as to improve the static eliminating efficiency.
In some embodiments, part of the spray heads 121 are sequentially arranged from the center of the brush head 120 to the edge of the brush head 120 (i.e. along the radial direction of the brush head 120), and a plurality of spray heads 121 are also arranged at intervals in the circumferential direction of the brush head 120 where each spray head 121 is located, so that the plurality of spray heads 121 sequentially and annularly radiate outwards from the center of the brush head 120, and the static electricity removing solution sprayed by each spray head 121 sequentially and outwards washes particles such as static charges and residues from the center of the brush head 120, thereby improving the cleanliness of the surface of the wafer 200,
the circumferential direction of the brush head 120 refers to the extending direction of the edge profile around the center of the brush head 120.
In addition, the semiconductor manufacturing apparatus 100 has a liquid supply line 130, and the liquid supply line 130 is capable of supplying a static-removing solution to the rinse line 122 so that the static-removing solution is sprayed out through a spray head 121 in communication with the rinse line 122 to remove static charges on the surface of the wafer 200.
In some embodiments, in fig. 2, the liquid supply line 130 includes a liquid line 131 and a carbon dioxide line 132, and an outlet of the carbon dioxide line 132 is in communication with an outlet of the liquid line 131 and an inlet of the rinse line 122, so that a liquid such as deionized water provided by the liquid line 131 and carbon dioxide gas provided by the carbon dioxide line 132 are mixed and dissolved to form a static-removing solution, and the static-removing solution is sprayed from the spray head 121 through the rinse line 122.
It will be appreciated that the carbon dioxide gas line 132 has a source of carbon dioxide gas to provide carbon dioxide gas to the carbon dioxide line; the liquid line 131 also has a water source device, such as deionized water, to provide deionized water to the liquid line 131.
In some embodiments, the liquid supply pipeline 130 further includes a pressurizing device 140, where the pressurizing device 140 is disposed on the carbon dioxide gas pipeline 132, and the pressurizing device 140 can increase the pressure in the gas pipeline, so as to increase the dissolution speed of the carbon dioxide gas and the liquid such as deionized water, and further improve the dissolution efficiency of the carbon dioxide gas and the liquid such as deionized water.
In some embodiments, the pressurizing device 140 may be a booster pump or other pressurizing device 140, as long as the pressure in the pipeline can be increased, and the embodiment of the present invention is not limited herein.
In some embodiments, the gas line further includes at least one control valve 150, such that the pressure in the gas line and the amount of carbon dioxide entering the rinse line 122 can be adjusted by controlling the opening of the control valve 150, such that the concentration of the carbonic acid solution formed after the carbon dioxide is mixed with the deionized water can be adjusted.
In fig. 2, for convenience of understanding, three control valves 150 are disposed in the gas pipeline, and the three control valves 150 may be represented by a first control valve 151, a second control valve 152 and a third control valve 153, where the first control valve 151 is disposed between the inlet of the carbon dioxide gas pipeline 132 and the pressurizing device 140, the second control valve 152 is disposed between the pressurizing device 140 and the exhaust port of the carbon dioxide gas pipeline 132, and the third control valve 153 is disposed between the pressurizing device 140 and the communication point of the liquid pipeline 131, so that the opening sizes of the first control valve 151, the second control valve 152 and the third control valve 153 may be adjusted according to the needs, so that the pressure in the gas pipeline and the concentration of the carbon dioxide gas entering the liquid pipeline 131 can be adjusted according to the actual needs.
In the above-mentioned scheme, the static-removing solution sprayed out by the spray head 121 can timely release static charges accumulated on the surface of the wafer 200 and the surface of the wafer carrying table 110 and other machine stations in the process of coating and photoetching the wafer 200, so that the alignment error of the wafer 200 in the alignment process of the wafer 200 is not affected by the temporary deformation of the wafer 200, and the uniformity of the behaviors of each wafer 200 manufactured by the semiconductor production equipment 100 is ensured, thereby improving the production efficiency of the wafer 200, reducing the alignment error of the wafer 200 and the like, and further improving the yield of the manufactured semiconductor structure.
Fig. 4 is a schematic structural diagram of a cooling device in a semiconductor manufacturing apparatus according to a first embodiment of the present invention. Referring to fig. 4, the semiconductor manufacturing apparatus 100 further includes a plasma reaction device 160, the plasma reaction device 160 has a reaction chamber 161, the wafer carrier 110 is disposed in the reaction chamber 161, and the semiconductor manufacturing apparatus 100 can perform physical or chemical etching on the wafer 200 placed on the wafer carrier 110.
Considering that the temperature of the wafer 200 is increased during the etching process due to physical friction, chemical reaction, and the like, if the temperature of the wafer 200 is greatly different in different process environments, the wafer 200 is damaged, and the like, therefore, after each process is finished, the temperature of the wafer 200 needs to be regulated and controlled first, and when the temperature of the wafer 200 reaches the preset temperature (for example, the temperature reaches the room temperature) of the next process, the next process is performed, and in order to enable the wafer 200 to be cooled quickly, a cooling process is generally provided in each preparation process of the wafer 200. In order to reduce the cooling time of the wafer 200 and improve the cooling efficiency of the wafer 200, in the embodiment of the present invention, a conductive layer 162 is further disposed in the reaction chamber 161, and the conductive layer 162 is connected to the chamber wall of the reaction chamber 161 and configured to conduct the electrostatic charges on the wafer 200 to be etched.
In the above-mentioned scheme, through setting up conducting layer 162 in reaction chamber 161, can adsorb the static granule on wafer 200 surface through conducting layer 162, that is to say, can get rid of the static electric charge on wafer 200 surface through setting up conducting layer 162, in addition, conducting layer 162 also can conduct the heat in the reaction chamber 161 to increase the radiating area, and then reduce the cooling time of wafer 200, improve cooling efficiency.
In some embodiments, the conductive layer 162 may be located directly above or directly below the wafer 200 to be etched, and the conductive layer 162 is connected to a ground, i.e. the conductive layer 162 is grounded, so that electrostatic charges on the surface of the wafer 200 can be conducted out through the conductive layer 162, so as to achieve the purpose of removing static electricity on the surface of the wafer 200 and in the reaction chamber 161.
In some embodiments, the semiconductor production apparatus 100 further includes a lifting mechanism (not shown in the figures), and the lifting mechanism is connected to the conductive layer 162, so that the conductive layer 162 is driven by the lifting mechanism to move toward or away from the wafer 200, so that a distance between the conductive layer 162 and the wafer 200 is adjustable, thereby improving an efficiency of the conductive layer 162 to conduct electrostatic charges on the surface of the wafer 200.
The lifting mechanism may refer to the structure and principle in the related art, and the embodiment of the present invention is not particularly limited herein.
In some embodiments, the conductive layer 162 is a metal conductive mesh, wherein the projection of the metal conductive layer 162 onto the wafer carrier 110 covers the projection of the wafer 200 onto the wafer carrier 110 to improve the conductive efficiency and reduce the cooling time.
In some embodiments, as shown in FIG. 4, the plasma reaction apparatus 160 is further provided with an air inlet channel 163 communicating with the reaction chamber 161 and an air knifeA passage 164 in which a reaction gas may enter the reaction chamber 161 through a gas inlet passage 163, and the reaction gas may be, for example, nitrogen (N) 2 ) The temperature within the reaction chamber 161 may also be quickly reacted by the reactant gases to reduce the time for cooling the wafer 200.
The gas inlet channel 163 may be disposed on a top wall of the reaction chamber 161, and the gas inlet channel 163 forms a gas flow during the gas entering process to drive the temperature of the wafer 200; in addition, the outlet of the air inlet channel 163 may have an inclined angle (e.g., an inclined angle of 60 °) with respect to the vertical direction, so that the air flow may purge the surface of the wafer 200 to remove the contaminant particles and temperature on the surface of the wafer 200, thereby improving the cleanliness and cooling efficiency of the surface of the wafer 200.
The air knife channel 164 can avoid adsorbing the contaminant particles or etching residues in the surrounding environment during the process of eliminating the electrostatic charges on the surface of the wafer 200, so that the strong high-speed air flow blown out by the air knife channel 164 can purge the surface of the wafer 200, and also can purge the contaminant particles attached to the inner wall of the reaction chamber 161, thereby avoiding the contamination to the wafer 200.
The air knife comprises a strip air knife and an annular air knife, and is specially designed for blowing out strong high-speed air flow so as to blow off dust, blow off water stains and cool down. The air knife consists of high-strength uniform laminar airflow.
In the embodiment of the present invention, the air knife channel 164 is an annular air knife channel 164, which extends along the circumferential contour of the reaction chamber 161, for example, the air knife channel 164 surrounds the reaction chamber 161 around one circle.
Example two
Fig. 5 is a schematic flow chart of a semiconductor production method according to an embodiment of the invention. Referring to fig. 5, an embodiment of the present invention further provides a semiconductor manufacturing method, which includes:
step S101: the wafer to be coated with the lithography is placed on a wafer carrier.
In this embodiment, the wafer to be coated with the lithography is placed on the wafer carrier, and the wafer is fixed on the wafer carrier, so as to avoid the movement of the wafer during the subsequent preparation process of the wafer.
Illustratively, a wafer chuck for fixing a wafer is provided on the wafer carrier to fix the wafer through the wafer chuck; in addition, the wafer is fixed through the wafer chuck, so that the wafer back of the wafer is exposed, and the wafer back of the wafer is subjected to operations such as gluing in the subsequent preparation process.
Step S102: providing a spin-coating material on the surface of the wafer, and spraying a static eliminating solution to the wafer in the coating stage of the wafer so that the static eliminating solution washes the surface of the wafer and eliminates static charges generated by the wafer; the static eliminating solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas.
In this embodiment, a spin-coating material is provided to a wafer back surface to be coated on a wafer, and the spin-coating material is coated on the wafer back through a brush head, and electrostatic charges are generated between the brush head and the wafer back due to physical friction and other actions in the process of coating the photoresist, so that a spray head is arranged on the brush head, and a static removing solution capable of removing the electrostatic charges is sprayed to the wafer through the spray head, so that the electrostatic charges are taken away through the static removing solution, temporary deformation of the wafer caused by accumulation of the electrostatic charges on the wafer surface is avoided, and overlay errors of the wafer in a photolithography process can be reduced, and the yield of a semiconductor structure is improved.
In some embodiments, spraying the destaticizing solution onto the wafer during a coating stage of the wafer specifically comprises:
after each wafer coating rotation, stopping the wafer rotation for a preset period of time; and flushing the wafer by the static eliminating solution within a preset time period. Through making the wafer rotate every coating a round, make the wafer stop rotating and last the default time to take away the static charge on wafer surface through the static solution that removes in the default time, like this, can be through removing the timely static charge that produces on wafer surface of static solution and take away, can carry out the coating rotation again after the static charge that produces on wafer surface every rotation round releases, thereby can reduce the accumulation of wafer surface static charge, also can reduce the risk of adsorbing pollutant particles, and then can avoid the temporary deformation of wafer that the accumulation of static charge on wafer surface arouses, thereby can reduce the overlay error of wafer in the photoetching process, and then improve semiconductor structure's yield.
The wafer is stopped rotating every time the wafer rotates for a circle and continuously maintains for a preset period of time, the preset period of time can be adaptively designed according to practical situations, as long as the wafer can be washed by the static eliminating solution and is taken away by static charges generated on the surface of the wafer, and the embodiment of the invention is not particularly limited.
The embodiment of the invention provides a semiconductor production method and equipment thereof, wherein the semiconductor production equipment comprises a wafer bearing table, a brush head and a driving device, wherein the wafer bearing table is used for placing a wafer to be coated with photoetching, a flushing pipeline and a spray head communicated with the flushing pipeline are arranged on the brush head, the spray head is arranged on one side of the brush head facing the wafer back of the wafer so as to spray an electrostatic removing solution to the wafer, and the electrostatic removing solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas; the driving device is connected with the wafer carrying table and is configured to drive the wafer carrying table to rotate around the axis thereof in the photoetching coating process so as to enable the brush head to pass through different positions in the circumferential direction of the wafer. Through the scheme, the electrostatic charges generated by the wafer due to physical friction and other factors can be removed in the wafer photoetching process, so that the temporary deformation of the wafer caused by the accumulation of the electrostatic charges on the surface of the wafer is avoided, the overlay error of the wafer in the photoetching process can be reduced, and the yield of the semiconductor structure is further improved.
In this specification, each embodiment or implementation is described in a progressive manner, and each embodiment focuses on a difference from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (14)
1. A semiconductor production apparatus, characterized by comprising:
the wafer bearing table is used for placing a wafer;
the device comprises a brush head, a cleaning pipe and a spray head, wherein the brush head is provided with the cleaning pipe and the spray head is communicated with the cleaning pipe, and the spray head is arranged on one side of the brush head facing the back of the wafer so as to spray a static removing solution to the wafer, wherein the static removing solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas;
the driving device is connected with the wafer carrying table and is configured to drive the wafer carrying table to rotate around the axis of the wafer carrying table in the photoetching coating process so that the brush head passes through different positions in the circumferential direction of the wafer.
2. The semiconductor manufacturing apparatus of claim 1, wherein the shower head has a predetermined angle with respect to a central axis of the brush head.
3. The semiconductor manufacturing apparatus according to claim 2, wherein a preset angle between the shower head and a central axis of the brush head is 30 ° to 60 °.
4. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, wherein the flushing line is provided at a central position of the brush head.
5. The semiconductor manufacturing apparatus according to claim 4, wherein the number of the shower heads is at least two, and at least two of the shower heads are arranged at intervals in the circumferential direction of the brush head.
6. A semiconductor production apparatus according to any one of claims 1 to 3, further comprising a liquid supply line comprising a liquid line and a carbon dioxide gas line, an outlet of the carbon dioxide gas line communicating with an outlet of the liquid line and with an inlet of the rinse line.
7. The semiconductor production apparatus according to claim 6, further comprising a pressurizing device provided on the carbon dioxide gas line.
8. A semiconductor production apparatus according to any one of claims 1-3, further comprising a plasma reaction device having a reaction chamber within which the wafer carrier is disposed, the reaction chamber further being provided with a conductive layer connected to a chamber wall of the reaction chamber and configured to conduct electrostatic charges on the wafer.
9. The semiconductor manufacturing apparatus of claim 8, further comprising a ground line, wherein the conductive layer is directly above the wafer and is connected to the ground line.
10. The semiconductor manufacturing apparatus of claim 9, wherein the conductive layer is a metallic conductive mesh.
11. The semiconductor manufacturing apparatus of claim 8, further comprising a lifting mechanism coupled to the conductive layer, the lifting mechanism configured to drive the conductive layer to move up and down in a direction toward or away from the wafer.
12. The semiconductor production apparatus according to claim 8, wherein an air intake passage and an air knife passage communicating with the reaction chamber are provided on the plasma reaction device, and an outlet of the air intake passage is located at a top of the reaction chamber; the air knife channel is arranged on the circumference of the plasma reaction device and communicated with the outside air.
13. A method of producing a semiconductor, comprising:
placing a wafer to be coated with lithography on a wafer carrying table;
providing a spin-coating material to the surface of the wafer, and spraying a static eliminating solution to the wafer in the coating stage of the wafer so that the static eliminating solution washes the surface of the wafer and removes static charges generated on the surface of the wafer; the static eliminating solution is an acidic solution with preset concentration formed by mixing deionized water and carbon dioxide gas.
14. The method according to claim 13, wherein the spraying the destaticizing solution onto the wafer at the coating stage of the wafer comprises:
after each wafer rotates for one circle, stopping the wafer from rotating and continuously maintaining for a preset period of time;
and flushing the wafer through the static eliminating solution within the preset time.
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| CN202210826204.5A CN117438290A (en) | 2022-07-14 | 2022-07-14 | Semiconductor production method and apparatus therefor |
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| CN202210826204.5A CN117438290A (en) | 2022-07-14 | 2022-07-14 | Semiconductor production method and apparatus therefor |
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