CN117434785A - Mask pattern correction method and device, electronic equipment and readable storage medium - Google Patents
Mask pattern correction method and device, electronic equipment and readable storage medium Download PDFInfo
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- CN117434785A CN117434785A CN202311766425.9A CN202311766425A CN117434785A CN 117434785 A CN117434785 A CN 117434785A CN 202311766425 A CN202311766425 A CN 202311766425A CN 117434785 A CN117434785 A CN 117434785A
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- 238000000034 method Methods 0.000 title claims abstract description 133
- 238000012937 correction Methods 0.000 title claims abstract description 125
- 238000003860 storage Methods 0.000 title claims abstract description 14
- 238000012360 testing method Methods 0.000 claims description 31
- 238000004590 computer program Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 9
- 238000010894 electron beam technology Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000011295 pitch Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The invention relates to the field of mask correction, and discloses a mask pattern correction method, a mask pattern correction device, electronic equipment and a readable storage medium, wherein the mask pattern correction method comprises the following steps of: dividing the target mask pattern into a sub-resolution auxiliary graphic target pattern and other target patterns; under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns; correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns; and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern. The method corrects the sub-resolution auxiliary graph target pattern by using a mask process correction program, so that the correction precision can be improved; and for other target patterns, the mask deviation rule table is used for correction, and the correction running speed is high.
Description
Technical Field
The present invention relates to the field of mask correction, and in particular, to a mask pattern correction method, apparatus, electronic device, and computer readable storage medium.
Background
Masks used in semiconductor lithography processes are typically manufactured by electron beam exposure and etching processes. The required target mask pattern generally includes Sub-resolution assist features (SRAF) and Main features (Main features). When the electron beam exposure is performed, the exposure pattern is identical to the target mask pattern, and errors exist between the finally obtained mask pattern and the target mask pattern due to the effects of electron beam scattering, etching deviation and the like, and the errors become larger as the mask size becomes smaller. Therefore, it is necessary to perform mask process correction. And correcting the electron beam exposure area on the basis of the target mask pattern, so that the obtained mask pattern is closer to the target mask pattern.
Currently, there are two ways of mask process correction, rule-based correction and model-based correction, respectively. In rule-based mask process correction, a mask deviation rule table needs to be defined first, edge segments with specific line widths and specific pitches are specified in the mask deviation rule table, and then all edge segments in a mask pattern are moved according to the mask deviation rule table. In model-based mask process correction, a mask process correction model (Mask Process Correction Model) is first created that predicts the final mask pattern that will be obtained after the mask manufacturing process for a given electron beam exposure pattern, then a mask process correction program is created and a correction program is run on the target mask pattern. The mask process based on the rule is corrected, the operation speed is higher, but the accuracy is limited. Model-based mask process correction is significantly slowed down due to the large number of model simulations and iterations required to run the mask correction program.
Therefore, how to solve the above technical problems should be of great interest to those skilled in the art.
Disclosure of Invention
The invention aims to provide a mask pattern correction method, a mask pattern correction device, an electronic device and a computer readable storage medium, so as to improve correction accuracy and speed.
In order to solve the above technical problems, the present invention provides a mask pattern correction method, including:
dividing the target mask pattern into a sub-resolution auxiliary graphic target pattern and other target patterns;
under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns;
correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns;
and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
Optionally, the method further comprises:
acquiring key dimension measurement values of all modeling patterns in the modeling pattern set;
fitting parameters in the mask process correction model by using the critical dimension measurement value to obtain a mask process correction model;
and establishing the mask process correction program based on the mask process correction model.
Optionally, the method further comprises:
generating a test graph set; the test pattern set comprises test patterns with different line widths and intervals;
correcting the test pattern by using the mask process correction program to obtain a corrected test pattern;
determining the deviation between the corrected test pattern and the corresponding test pattern;
and establishing the mask deviation rule table according to the line width, the distance and the deviation.
Optionally, correcting the other target pattern using a pre-established mask bias rule table includes:
determining the line width of the other target patterns;
determining a distance between the edge of the other target pattern and the edge of the adjacent target pattern; the adjacent target pattern includes the sub-resolution auxiliary graphic target pattern and the other target pattern;
determining a corresponding moving distance according to the line width and the distance through the mask deviation rule table;
and correcting the other target patterns according to the moving distance.
Optionally, correcting the sub-resolution auxiliary pattern target pattern by using a pre-established mask process correction program, and obtaining the corrected sub-resolution auxiliary pattern includes:
segmenting the edge of the sub-resolution auxiliary graph target pattern by using the mask process correction program to form an edge segment;
setting a control point on the edge section;
acquiring an edge placement error of the control point;
and moving the edge section according to the edge placement error to obtain a corrected sub-resolution auxiliary graph pattern.
Optionally, before obtaining the edge placement error of the control point, the method further includes:
and determining the edge placement error of the control point by using a mask process correction model.
Optionally, correcting the other target patterns by using a pre-established mask deviation rule table, and after obtaining corrected other patterns, further including:
under the condition that other corrected patterns are fixed, correcting the corrected sub-resolution auxiliary pattern by using the mask process correction program to obtain a secondary corrected sub-resolution auxiliary pattern;
correspondingly, merging the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern includes:
and combining the secondary corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
The invention also provides a mask pattern correction device, comprising:
the dividing module is used for dividing the target mask pattern into a sub-resolution auxiliary graph target pattern and other target patterns;
the first correction module is used for correcting the sub-resolution auxiliary graph target pattern by utilizing a pre-established mask process correction program under the condition that other target patterns are fixed, so as to obtain a corrected sub-resolution auxiliary graph pattern;
the second correction module is used for correcting the other target patterns by utilizing a mask deviation rule table established in advance to obtain other corrected patterns;
and the merging module is used for merging the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
The present invention also provides an electronic device including:
a memory for storing a computer program;
and a processor for implementing any one of the above mask pattern correction methods when executing the computer program.
The present invention also provides a computer-readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of any one of the above-described mask pattern correction methods.
The mask pattern correction method provided by the invention comprises the following steps: dividing the target mask pattern into a sub-resolution auxiliary graphic target pattern and other target patterns; under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns; correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns; and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
Therefore, the correction method divides the target mask pattern into the sub-resolution auxiliary pattern target pattern and other target patterns, and uses the mask process correction program to correct the sub-resolution auxiliary pattern target pattern, namely, simulation and iteration are only carried out on the sub-resolution auxiliary pattern target pattern, and correction based on the mask process correction program can improve correction precision. And for other target patterns, the mask deviation rule table is used for correction, and the correction running speed is high. Therefore, the correction method in the present invention ensures both correction accuracy and correction running speed.
Furthermore, the present invention provides an apparatus, an electronic device, and a computer-readable storage medium having the above advantages.
Drawings
For a clearer description of embodiments of the invention or of the prior art, the drawings that are used in the description of the embodiments or of the prior art will be briefly described, it being apparent that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from them without inventive effort for a person skilled in the art.
FIG. 1 (a) is a schematic diagram of a target mask pattern;
FIG. 1 (b) is a schematic illustration of an uncorrected electron beam exposure pattern;
fig. 1 (c) is a schematic diagram of a mask pattern obtained by performing exposure using the same exposure pattern as the target mask pattern;
FIG. 2 (a) is a schematic diagram of a corrected electron beam exposure pattern;
FIG. 2 (b) is a schematic diagram of a mask pattern obtained by performing exposure using a corrected exposure pattern;
FIG. 3 is a flowchart illustrating a mask pattern correction method according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a target mask pattern according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a sub-resolution auxiliary graphic object pattern after cutting edge segments and placing control points according to an embodiment of the present invention;
FIG. 6 is a second flowchart of a mask pattern correction method according to an embodiment of the present invention;
FIG. 7 is a block diagram of a mask pattern correction apparatus according to an embodiment of the present invention;
fig. 8 is a block diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
In order to better understand the aspects of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Mask process correction (Mask Process Correction, MPC) is to correct an electron beam exposure pattern so that a final mask pattern obtained by the manufacturing coincides with a target mask pattern when manufacturing a mask using an electron beam exposure and etching process.
Assuming that a target mask pattern is shown in fig. 1 (a), an exposure pattern when electron beam exposure is identical to the target mask pattern, as shown in fig. 1 (b), a final mask pattern obtained by manufacturing is shown in fig. 1 (c) due to effects of electron beam scattering, etching deviation, and the like, and there is an error between the target mask pattern.
When the mask process correction is employed, as for the target mask pattern shown in fig. 1 (a), the electron beam exposure region is corrected as shown in fig. 2 (a), and the final mask pattern obtained by the manufacturing is closer to the target mask pattern as shown in fig. 2 (b).
As described in the background section, when a mask process correction based on rules is adopted, the correction speed is high, but the accuracy is limited; when the mask process of the model is adopted for correction, the accuracy is high, but the speed is slow.
In view of this, the present invention provides a mask pattern correction method, please refer to fig. 3, which includes:
step S101: the target mask pattern is divided into a sub-resolution auxiliary graphic target pattern and other target patterns.
A schematic diagram of a target mask pattern is shown in fig. 4, comprising a sub-resolution auxiliary graphic target pattern 1 and other target patterns 2.
The sub-resolution auxiliary pattern target pattern is an auxiliary pattern, the size is smaller, and the proximity effect of the mask process is more obvious. Other target patterns are larger in size and the proximity effect of the mask process is less obvious.
Other target patterns include, but are not limited to, main patterns (Main patterns), dummy patterns (Dummy patterns).
Step S102: and under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns.
The mask process correction procedure in this embodiment is based on the establishment of a mask process correction model.
The process of correcting the mask process correction procedure in this embodiment can refer to the related art, and the key point in this embodiment is to correct the sub-resolution auxiliary pattern target pattern.
As an implementation manner, the correcting the sub-resolution auxiliary graph target pattern by using a pre-established mask process correction program, and obtaining the corrected sub-resolution auxiliary graph pattern includes:
step S1021: and segmenting the edge of the sub-resolution auxiliary graph target pattern by using the mask process correction program to form an edge segment.
Step S1022: control points are arranged on the edge sections.
A schematic of the sub-resolution auxiliary pattern object after cutting the edge segments and placing the control points 3 is shown in fig. 5.
Step S1023: and acquiring the edge placement error of the control point.
The edge placement error of the control point is calculated by a mask process correction model. As an implementation manner, before acquiring the edge placement error of the control point, the method may further include:
and determining the edge placement error of the control point by using a mask process correction model.
It is noted that in determining the edge placement error of control points on the sub-resolution auxiliary graphic target pattern, the influence of other target patterns needs to be taken into account.
Step S1024: and moving the edge section according to the edge placement error to obtain a corrected sub-resolution auxiliary graph pattern.
Since the model simulation and edge segment movement are only for control points on the sub-resolution auxiliary graphical target pattern, the time for program run is greatly shortened.
Step S103: and correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns.
In the step, only other target patterns are corrected by using the mask deviation rule table, and only edges of other target patterns are moved in the correction process.
The parameters in the mask bias rule table include line width, spacing of edges, and travel distance (i.e., bias).
As an embodiment, correcting the other target pattern using a mask deviation rule table established in advance includes:
step S1031: and determining the line width of the other target patterns.
Step S1032: determining a distance between the edge of the other target pattern and the edge of the adjacent target pattern; the adjacent target pattern includes the sub-resolution auxiliary graphic target pattern and the other target pattern.
In the step, when the distance between the edge of other target patterns and the adjacent edge is determined, the sub-resolution auxiliary graph target patterns and other target patterns are taken into consideration, so that the accuracy of correcting the other target patterns is improved.
For example, assuming that the other target pattern is a sub-resolution auxiliary pattern target pattern and the other target pattern are sequentially left, if the sub-resolution auxiliary pattern target pattern is not taken into consideration, when determining the distance between the edge in the other target pattern and the adjacent edge, the distance is the distance between the edge in the other target pattern and the edge of the other target pattern located on the left side of the sub-resolution auxiliary pattern target pattern, and this distance is inaccurate.
Step S1033: and determining a corresponding moving distance according to the line width and the distance through the mask deviation rule table.
Step S1034: and correcting the other target patterns according to the moving distance.
Step S104: and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
The resulting corrected mask pattern is used for electron beam exposure.
The correction method in this embodiment divides the target mask pattern into a sub-resolution auxiliary pattern target pattern and other target patterns, and uses a mask process correction program to correct the sub-resolution auxiliary pattern target pattern, that is, simulation and iteration are performed only for the sub-resolution auxiliary pattern target pattern, and correction based on the mask process correction program can improve correction accuracy. And for other target patterns, the mask deviation rule table is used for correction, and the correction running speed is high. Therefore, the correction method in the present invention ensures both correction accuracy and correction running speed.
Referring to FIG. 6, in one embodiment of the present invention, a mask pattern correction method is provided based on the above embodiment
Step S201: and acquiring critical dimension measurement values of each modeling pattern in the modeling pattern set.
The modeling pattern set includes one-dimensional and two-dimensional patterns of different geometries and sizes, wherein the one-dimensional pattern may be a line and the two-dimensional pattern may be a pattern having a length in both the X and Y directions, e.g., a rectangle, square, etc., other than a line.
Critical dimension (critical dimension, CD) measurements can be obtained by scanning electron microscopy.
Step S202: and fitting parameters in the mask process correction model by using the critical dimension measurement value to obtain the mask process correction model.
Step S203: and establishing the mask process correction program based on the mask process correction model.
The process of establishing the mask process correction procedure in this step may refer to the related art, and will not be described in detail herein.
Step S204: generating a test graph set; the test pattern set comprises test patterns with different line widths and pitches.
The line width and the space of the test pattern in this step can be set according to the actual situation, and the method is not limited in this embodiment.
Step S205: and correcting the test pattern by using the mask process correction program to obtain a corrected test pattern.
The process of correcting the test pattern by the mask process correction program is the same as the process of correcting the sub-resolution auxiliary pattern target pattern by the mask process correction program in the above embodiment, that is, the edge segment of the test pattern is segmented, the control point is set on the edge segment, and the edge segment is moved by the edge placement error of the control point.
Step S206: and determining the deviation of the corrected test pattern and the corresponding test pattern.
Step S207: and establishing the mask deviation rule table according to the line width, the distance and the deviation.
In the related art, when a mask deviation rule table is established, the mask deviation rule table is established by measuring a limited amount of data, so that the data in the mask deviation rule table are limited, and further, the correction accuracy is limited. In this embodiment, when the mask deviation rule table is established, a large amount of data can be obtained to establish the mask deviation rule table by generating the mask process correction program, so that the correction accuracy is further improved.
Step S208: the target mask pattern is divided into a sub-resolution auxiliary graphic target pattern and other target patterns.
Step S209: and under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns.
Step S210: and correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns.
Step S211: and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
On the basis of any one of the foregoing embodiments, in one embodiment of the present invention, the correcting the other target pattern by using a pre-established mask deviation rule table, after obtaining the corrected other pattern, further includes:
under the condition that other corrected patterns are fixed, correcting the corrected sub-resolution auxiliary pattern by using the mask process correction program to obtain a secondary corrected sub-resolution auxiliary pattern;
correspondingly, merging the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern includes:
and combining the secondary corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
In this embodiment, after other target patterns are corrected by using the mask deviation rule table, the corrected sub-resolution auxiliary pattern is corrected by using the mask process correction program again, and when the edge placement error of the control point on the corrected sub-resolution auxiliary pattern is determined by using the mask process correction program again, the surrounding patterns are corrected by using the mask deviation rule table, so that the correction accuracy of the sub-resolution auxiliary pattern target pattern can be further improved, and the accuracy of the corrected mask pattern is improved.
The mask pattern correction device according to the embodiment of the present invention will be described below, and the mask pattern correction device described below and the mask pattern correction method described above may be referred to correspondingly.
Fig. 7 is a block diagram of a mask pattern correction apparatus according to an embodiment of the present invention, and referring to fig. 7, the mask pattern correction apparatus may include:
a dividing module 100 for dividing the target mask pattern into a sub-resolution auxiliary graphic target pattern and other target patterns;
the first correction module 200 is configured to correct the sub-resolution auxiliary graphic target pattern by using a pre-established mask process correction procedure under the condition that the other target patterns are fixed, so as to obtain a corrected sub-resolution auxiliary graphic pattern;
a second correction module 300, configured to correct the other target patterns by using a mask deviation rule table established in advance, so as to obtain corrected other patterns;
and a merging module 400, configured to merge the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
The mask pattern correction device of this embodiment is used to implement the foregoing mask pattern correction method, so that the specific implementation of the mask pattern correction device can be seen in the foregoing example portions of the mask pattern correction method, for example, the dividing module 100, the first correction module 200, and the second correction module 300, and the combining module 400 are respectively used to implement steps S101, S102, S103, and S104 in the foregoing mask pattern correction method, so that the specific implementation thereof can refer to the description of the corresponding examples of each portion and will not be repeated herein.
As an embodiment, the mask pattern correction device may further include:
the acquisition module is used for acquiring key dimension measurement values of all modeling patterns in the modeling pattern set;
the fitting module is used for fitting parameters in the mask process correction model by using the critical dimension measurement value to obtain the mask process correction model;
and the first establishing module is used for establishing the mask process correction program based on the mask process correction model.
As an embodiment, the mask pattern correction device may further include:
the generating module is used for generating a test graph set; the test pattern set comprises test patterns with different line widths and intervals;
the third correction module is used for correcting the test pattern by using the mask process correction program to obtain a corrected test pattern;
the first determining module is used for determining deviation between the corrected test pattern and the corresponding test pattern;
and the second establishing module is used for establishing the mask deviation rule table according to the line width, the distance and the deviation.
As an embodiment, the second correction module 300 includes:
a first determining unit configured to determine a line width of the other target pattern;
a second determining unit configured to determine a distance between an edge of the other target pattern and an edge of an adjacent target pattern; the adjacent target pattern includes the sub-resolution auxiliary graphic target pattern and the other target pattern;
a third determining unit, configured to determine, according to the line width and the pitch, a corresponding movement distance through the mask deviation rule table;
and the correction unit is used for correcting the other target patterns according to the moving distance.
As an embodiment, the first correction module 200 includes:
the segmentation unit is used for segmenting the edges of the sub-resolution auxiliary graph target patterns by using the mask process correction program to form edge segments;
a setting unit for setting a control point on the edge section;
an obtaining unit, configured to obtain an edge placement error of the control point;
and the moving unit is used for moving the edge section according to the edge placement error to obtain a corrected sub-resolution auxiliary graph pattern.
As an embodiment, the mask pattern correction device further includes:
and the second determining module is used for determining the edge placement error of the control point by using a mask process correction model.
As an embodiment, the mask pattern correction device further includes:
the fourth correction module is used for correcting the corrected sub-resolution auxiliary pattern by using the mask process correction program under the condition that other corrected patterns are fixed, so as to obtain a secondary corrected sub-resolution auxiliary pattern;
accordingly, the merging module 400 is specifically configured to: and combining the secondary corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
The electronic device provided by the embodiment of the invention is introduced below, and the electronic device described below and the mask pattern correction method described above can be referred to correspondingly.
Referring to fig. 8, the present invention provides an electronic device, including:
a memory 11 for storing a computer program;
a processor 12 for implementing the steps of the mask pattern correction method according to any of the above embodiments when executing the computer program.
The following describes a computer-readable storage medium provided in an embodiment of the present invention, and the computer-readable storage medium described below and the mask pattern correction method described above may be referred to correspondingly with each other.
A computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the mask pattern correction method according to any of the above embodiments.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, so that the same or similar parts between the embodiments are referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
Those of skill would further appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both, and that the various illustrative elements and steps are described above generally in terms of functionality in order to clearly illustrate the interchangeability of hardware and software. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
The steps of a method or algorithm described in connection with the embodiments disclosed herein may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. The software modules may be disposed in Random Access Memory (RAM), memory, read Only Memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.
The mask pattern correction method, the mask pattern correction device, the electronic equipment and the computer readable storage medium provided by the invention are described in detail above. The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to facilitate an understanding of the method of the present invention and its core ideas. It should be noted that it will be apparent to those skilled in the art that various modifications and adaptations of the invention can be made without departing from the principles of the invention and these modifications and adaptations are intended to be within the scope of the invention as defined in the following claims.
Claims (10)
1. A mask pattern correction method, comprising:
dividing the target mask pattern into a sub-resolution auxiliary graphic target pattern and other target patterns;
under the condition that other target patterns are fixed, correcting the sub-resolution auxiliary graph target patterns by using a pre-established mask process correction program to obtain corrected sub-resolution auxiliary graph patterns;
correcting the other target patterns by using a pre-established mask deviation rule table to obtain corrected other patterns;
and combining the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
2. The mask pattern correction method according to claim 1, further comprising:
acquiring key dimension measurement values of all modeling patterns in the modeling pattern set;
fitting parameters in the mask process correction model by using the critical dimension measurement value to obtain a mask process correction model;
and establishing the mask process correction program based on the mask process correction model.
3. The mask pattern correction method according to claim 2, further comprising:
generating a test graph set; the test pattern set comprises test patterns with different line widths and intervals;
correcting the test pattern by using the mask process correction program to obtain a corrected test pattern;
determining the deviation between the corrected test pattern and the corresponding test pattern;
and establishing the mask deviation rule table according to the line width, the distance and the deviation.
4. The mask pattern correction method according to claim 1, wherein correcting the other target pattern using a mask deviation rule table established in advance includes:
determining the line width of the other target patterns;
determining a distance between the edge of the other target pattern and the edge of the adjacent target pattern; the adjacent target pattern includes the sub-resolution auxiliary graphic target pattern and the other target pattern;
determining a corresponding moving distance according to the line width and the distance through the mask deviation rule table;
and correcting the other target patterns according to the moving distance.
5. The mask pattern correction method according to claim 1, wherein correcting the sub-resolution auxiliary pattern target pattern using a mask process correction program established in advance, to obtain a corrected sub-resolution auxiliary pattern comprises:
segmenting the edge of the sub-resolution auxiliary graph target pattern by using the mask process correction program to form an edge segment;
setting a control point on the edge section;
acquiring an edge placement error of the control point;
and moving the edge section according to the edge placement error to obtain a corrected sub-resolution auxiliary graph pattern.
6. The mask pattern correction method according to claim 5, further comprising, before acquiring the edge placement error of the control point:
and determining the edge placement error of the control point by using a mask process correction model.
7. The mask pattern correction method according to any one of claims 1 to 6, wherein the correction of the other target pattern using a mask deviation rule table established in advance, after obtaining the corrected other pattern, further comprises:
under the condition that other corrected patterns are fixed, correcting the corrected sub-resolution auxiliary pattern by using the mask process correction program to obtain a secondary corrected sub-resolution auxiliary pattern;
correspondingly, merging the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern includes:
and combining the secondary corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
8. A mask pattern correction apparatus, comprising:
the dividing module is used for dividing the target mask pattern into a sub-resolution auxiliary graph target pattern and other target patterns;
the first correction module is used for correcting the sub-resolution auxiliary graph target pattern by utilizing a pre-established mask process correction program under the condition that other target patterns are fixed, so as to obtain a corrected sub-resolution auxiliary graph pattern;
the second correction module is used for correcting the other target patterns by utilizing a mask deviation rule table established in advance to obtain other corrected patterns;
and the merging module is used for merging the corrected sub-resolution auxiliary pattern and the corrected other patterns to obtain a corrected mask pattern.
9. An electronic device, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the mask pattern correction method according to any one of claims 1 to 7 when executing the computer program.
10. A computer readable storage medium, characterized in that the computer readable storage medium has stored thereon a computer program which, when executed by a processor, implements the steps of the mask pattern correction method according to any one of claims 1 to 7.
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