CN117419825B

CN117419825B - Temperature sensor, sensor system, temperature measuring method and electronic device

Info

Publication number: CN117419825B
Application number: CN202311446190.5A
Authority: CN
Inventors: 焦晗; 袁高炜; 丁喆; 王新权
Original assignee: Honor Device Co Ltd
Current assignee: Honor Device Co Ltd
Priority date: 2023-11-02
Filing date: 2023-11-02
Publication date: 2024-04-19
Anticipated expiration: 2043-11-02
Also published as: CN117419825A

Abstract

The embodiment of the invention discloses a temperature sensor, a sensor system, a temperature measuring method and electronic equipment. The temperature sensor includes: a laser, a multilayer film structure, and a receiving end. The multilayer film structure comprises a substrate, and a metal layer and a temperature medium layer which are sequentially arranged on the first surface of the substrate. The laser is used for generating laser light. The substrate is used for supporting the metal layer. The metal layer is used for receiving laser and generating surface plasmons at the interface of the metal layer and the temperature medium layer. The temperature medium layer is used for contacting an object to be tested. The refractive index of the temperature medium layer changes along with the temperature of the object to be tested. The refractive index change of the temperature medium layer causes the wavelength of the surface plasmon to change. The receiving end is used for receiving the surface plasmons and analyzing the wavelength of the surface plasmons. The wavelength of the surface plasmons is used to measure the temperature of the object to be tested. The temperature sensor is simple in structure and can be conveniently arranged in electronic equipment.

Description

Temperature sensor, sensor system, temperature measuring method and electronic device

Technical Field

The invention relates to the field of temperature measurement equipment, in particular to a temperature sensor, a sensor system, a temperature measurement method and electronic equipment.

Background

At present, the demand standard and the importance degree of people for health are continuously increased. Accordingly, various home health monitoring devices are widely used in daily life of people, such as thermometers, body fat scales, blood pressure meters, etc., but the devices are often not portable due to large size.

With the rapid development and popularization of mobile terminals, many small electronic devices, such as mobile phones, hand rings, etc., have become a tool for users to carry with them. However, there is currently no temperature sensor that can be installed in electronic devices such as mobile phones.

Disclosure of Invention

The embodiment of the invention provides a temperature sensor, a sensor system, a temperature measuring method and electronic equipment.

In a first aspect, an embodiment of the present invention provides a temperature sensor, including: lasers, multilayer film structures, and receivers; the multilayer film structure comprises a substrate, and a metal layer and a temperature medium layer which are sequentially arranged on the first surface of the substrate;

The laser is used for generating laser;

The substrate is used for supporting the metal layer;

The metal layer is used for receiving the laser and generating surface plasmons at the interface of the metal layer and the temperature medium layer;

The temperature medium layer is used for contacting an object to be tested, the refractive index of the temperature medium layer changes along with the temperature of the object to be tested, and the refractive index of the temperature medium layer changes to enable the wavelength of the surface plasmon to change;

The receiver is used for receiving the surface plasmons and analyzing the wavelength of the surface plasmons, and the wavelength of the surface plasmons is used for measuring the temperature of the object to be tested.

The temperature sensor is simple in structure and can be conveniently arranged on the electronic equipment.

With reference to the first aspect, in a possible implementation manner, the temperature medium layer is a liquid material; the temperature sensor further includes a housing;

the temperature medium layer is positioned in a container formed by the shell and the metal layer.

With reference to the first aspect, in a possible implementation manner, the material of the temperature medium layer includes at least one of carbon disulfide, glycerol, chloroform and carbon tetrachloride; the material of the housing includes at least one of copper, aluminum, silicon dioxide, aluminum nitride, polymethyl methacrylate, and polycarbonate.

In the above embodiments, the material of the housing has good thermal conductivity. When an object to be tested indirectly contacts the temperature medium layer through the shell, heat of the object to be tested can be quickly conducted to the temperature medium layer through the shell, and the refractive index of the temperature medium layer accurately reflects the temperature of the object to be tested.

With reference to the first aspect, in one possible implementation manner, the temperature medium layer is a solid material; the material of the temperature medium layer comprises at least one of germanium, bismuth, antimony, indium, cadmium and selenium.

With reference to the first aspect, in a possible implementation manner, the metal layer includes a plurality of grooves.

With reference to the first aspect, in a possible implementation manner, the plurality of grooves are arranged at equal intervals along the first direction, and the intervals are not greater than a wavelength of laser light emitted by the laser. In the case where a plurality of grooves are arranged at equal intervals in the first direction, the plurality of grooves are identical in shape.

With reference to the first aspect, in a possible implementation manner, the plurality of grooves are distributed in an array on the metal layer. In the case where a plurality of grooves are distributed in an array on the metal layer, the plurality of grooves are identical in shape. With reference to the first aspect, in a possible implementation manner, the grooves of the same row have the same shape; the shape of the grooves of the different rows is different.

With reference to the first aspect, in a possible implementation manner, the grooves of the same row are arranged at equal intervals, and the intervals are not greater than a wavelength of laser light emitted by the laser.

With reference to the first aspect, in a possible implementation manner, the plurality of grooves includes two rows of grooves with different angles.

With reference to the first aspect, in a possible implementation manner, a depth of the groove is less than or equal to a thickness of the metal layer.

In the above embodiment, by providing a plurality of grooves on the metal layer, and designing the shape, pitch, depth, and the like of the grooves, control of the propagation path and focal position of the surface plasmon can be achieved to satisfy the requirements of the relative positions of the multilayer film structure and the receiver.

With reference to the first aspect, in a possible implementation manner, the temperature sensor further includes a computing unit;

The computing unit is used for storing the corresponding relation between the wavelength and the temperature;

The receiver is further used for sending the analyzed wavelength of the surface plasmon to the computing unit;

The computing unit is further configured to receive a wavelength of the surface plasmon, and determine, according to a correspondence between the wavelength and the temperature, that a temperature corresponding to the wavelength of the surface plasmon is a temperature of the object to be tested.

In the above embodiment, a calculating unit is disposed in the temperature sensor, and the calculating unit stores the correspondence between the wavelength and the temperature in advance, and determines, according to the correspondence between the wavelength and the temperature, the temperature corresponding to the wavelength of the surface plasmon as the temperature of the object to be tested. The temperature sensor can quickly obtain the temperature of an object to be tested based on the wavelength of the surface plasmon by using the computing unit, so that the temperature sensor is quick and efficient in temperature measurement.

In a second aspect, embodiments of the present invention provide a sensor system comprising a distance sensor, a beam splitter and a temperature sensor according to the first aspect; the distance sensor and the temperature sensor share the laser;

The beam splitter is used for dividing the laser emitted by the laser into first laser and second laser;

the first laser is used for measuring the temperature by the temperature sensor, and the second laser is used for measuring the distance by the distance sensor.

According to the embodiment of the application, the temperature sensor and the distance sensor can be integrated together through the shared laser. Compared with the arrangement of the temperature sensor and the distance sensor on the electronic equipment respectively, the arrangement of the sensor system on the electronic equipment can reduce the occupied space of the temperature sensor and improve the space utilization rate of the electronic equipment.

In a third aspect, embodiments of the present invention provide an electronic device comprising one or more processors, one or more memories, and a temperature sensor according to the first aspect; wherein the one or more memories are coupled with the one or more processors;

the one or more memories are used for storing the corresponding relation between the wavelength and the temperature;

The processor is used for receiving the wavelength of the surface plasmon sent by the temperature sensor, and determining that the temperature corresponding to the wavelength of the surface plasmon is the temperature of the object to be tested according to the corresponding relation between the wavelength and the temperature.

According to the embodiment of the application, the temperature sensor is arranged in the electronic equipment, the memory in the electronic equipment stores the corresponding relation between the wavelength and the temperature, and the processor in the electronic equipment determines that the temperature corresponding to the wavelength of the surface plasmon measured by the temperature sensor is the temperature of the object to be tested according to the corresponding relation between the wavelength and the temperature. The problem that the electronic equipment cannot test the temperature of an object to be tested is solved.

In a fourth aspect, embodiments of the present invention provide an electronic device comprising a temperature sensor as described in the first aspect or comprising a sensor system as described in the second aspect.

According to the embodiment of the application, the sensor system is arranged in the electronic equipment, so that the electronic equipment can conveniently test the temperature or the distance of the object to be tested. The sensor system is arranged on the electronic equipment, and compared with the method that the temperature sensor and the distance sensor are independently arranged on the electronic equipment, the space utilization rate of the electronic equipment can be improved.

In a fifth aspect, an embodiment of the present invention provides a temperature measurement method, where the method is applied to an electronic device including any one of the above third aspect or fourth aspect to implement the temperature sensor, and the method includes:

Receiving the wavelength of the surface plasmon transmitted by the temperature sensor;

And determining the temperature corresponding to the wavelength of the surface plasmon as the temperature of the object to be tested according to the corresponding relation between the wavelength and the temperature.

In a sixth aspect, embodiments of the present invention provide a computer readable storage medium comprising instructions which, when run on an electronic device, cause the electronic device to perform a method as described in any one of the possible implementations of the fifth aspect.

In a seventh aspect, the application provides a computer program product comprising instructions which, when run on an electronic device, cause the electronic device to perform a method as described in any one of the possible implementations of the fifth aspect.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1A is a schematic structural diagram of a temperature sensor 1 according to an embodiment of the present application;

Fig. 1B is a schematic structural diagram of a temperature sensor 1 according to an embodiment of the present application;

FIG. 2A is a wavelength of a surface plasmon according to an embodiment of the present application Refractive index with temperature dielectric layer 121/>Is a schematic of the relationship;

FIG. 2B shows a measurement of the phase of a surface plasmon according to an embodiment of the present application And/>Is a relationship of (2);

FIG. 3A is a schematic view of a multi-layer film structure according to an embodiment of the present application;

FIG. 3B is a schematic view of a multi-layer film structure according to an embodiment of the present application;

FIG. 4A is a top view of a metal layer according to an embodiment of the present application;

FIG. 4B is a cross-sectional view of a metal layer according to an embodiment of the present application;

FIG. 4C is a cross-sectional view of a metal layer according to an embodiment of the present application;

FIG. 4D is a top view of a metal layer according to an embodiment of the present application;

FIG. 4E is a schematic diagram of a surface plasmon propagating along a first surface of a metal layer according to an embodiment of the present application;

FIG. 4F is a top view of a metal layer according to an embodiment of the present application;

FIG. 4G is a top view of a metal layer according to an embodiment of the present application;

FIG. 4H is a schematic diagram of a surface plasmon propagating along a first surface of a metal layer according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a position of a temperature sensor on an electronic device according to an embodiment of the present application;

FIG. 6A is a schematic diagram of a sensor system provided by an embodiment of the present application;

FIG. 6B is a schematic diagram illustrating a sensor system according to an embodiment of the present application in a position in front of an electronic device;

FIG. 6C is a schematic diagram illustrating a sensor system according to an embodiment of the present application being placed behind an electronic device;

FIG. 7A is a schematic flow chart of a temperature measurement method according to an embodiment of the present application;

FIG. 7B is a schematic diagram of a user interface for measuring temperature according to an embodiment of the present application;

Fig. 8 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

Detailed Description

In order to solve the problem that the electronic equipment cannot sense the temperature of an object or a human body in real time in the prior art. The embodiment of the application provides a temperature measuring sensor. The temperature measuring sensor has a simple structure and a small size, and can be arranged on electronic equipment, so that the electronic equipment has the function of measuring the temperature of an object or a human body in real time.

First, the structure of the temperature sensor 1 provided in the embodiment of the present application is described with reference to fig. 1A and 1B.

Fig. 1A is a schematic structural diagram of a temperature sensor 1 according to an embodiment of the present application. The temperature sensor 1 includes, but is not limited to, a laser 11, a multilayer film structure 12, and a receiver 13.

The laser 11 is used to emit laser light toward the multilayer film structure 12. The multilayer film structure 12 includes a first surface and a second surface, wherein the multilayer film structure 12 is configured to generate surface plasmons upon receiving the laser light at the first surface; the second surface (also referred to as the contact surface) of the multilayer film structure 12 is for contacting an object to be tested, and the first surface and the second surface are opposite surfaces on the multilayer film structure 12. The receiver 13 is for receiving surface plasmons generated at the surface of the multilayer film structure 12, and analyzing the wavelength of the surface plasmons, and determining the temperature of the object to be tested based on the wavelength of the surface plasmons.

Laser 11

Among them, in order to make the temperature sensor 1 small in size and obtain a laser light of strong directivity and high monochromaticity, the laser 11 may be a semiconductor laser.

The semiconductor laser has the characteristics of small volume, light weight, stable operation, low power consumption, high efficiency and long service life. The semiconductor laser can be excited by voltage and current to output laser light with strong directivity and high monochromaticity. The semiconductor laser in the embodiment of the application can be a gallium arsenide laser.

In this embodiment of the present application, the laser light emitted by the laser 11 may be monochromatic light, and the wavelength is selected to be 375nm-1650nm. Illustratively, the laser has a wavelength of 980 nm.

Multilayer film structure 12

The multilayer film structure 12 includes, but is not limited to, a substrate 123, a metal layer 122 disposed on a first surface of the substrate 123, and a temperature medium layer 121 disposed on a surface of the metal layer 122 facing away from the substrate 123 (also referred to as a first surface of the metal layer 122). The substrate 123 is used to support the metal layer 122. The metal layer 122 is used to receive the laser light emitted from the laser 11 and generate surface plasmons on the surface facing away from the substrate 123. The temperature medium layer 121 is a material that can change its refractive index with temperature, and is used to change its refractive index according to the temperature of an object to be tested when contacting the object to be tested. The surface plasmons generated on the surface of the metal layer 122 are totally reflected by the temperature medium layer 121, so that the surface plasmons propagate in the interface of the metal layer 122 and the temperature medium layer 121 to be received by the receiver 13. Wavelength of surface plasmon caused by refractive index change of temperature medium layer 121Changes and the refractive index of the temperature medium layer 121 is caused by the temperature change of the object to be tested, thus, the wavelength/> -of the surface plasmonWill change with the temperature change of the object to be tested, the receiver 13 can be tuned by analyzing the wavelength/>, of the surface plasmonsThe temperature of the object to be tested is obtained.

In the multilayer film structure 12, the wavelength of surface plasmonsRefractive index with temperature dielectric layer 121/>The relation of (2) is as follows:

wherein, Is the dielectric constant of the temperature medium layer 121,/>Is the dielectric constant of the metal layer 122,/>Is the speed of light,/>Is the angular frequency of the laser.

Refractive index of temperature medium layer 121The refractive index of the temperature medium layer 121 may be measured in advance in relation to temperatureAnd temperature profile. Furthermore, the wavelength/>, based on the surface plasmonRefractive index with temperature dielectric layer 121/>The relation of (2) can be obtained as the wavelength/>, of the surface plasmonCorrespondence with the temperature of the temperature medium layer 121 (i.e., the temperature of the object to be tested) to determine the wavelength/>, of the surface plasmonAnd then determining the temperature of the object to be tested based on the corresponding relation.

Where temperature medium layer 121 contacts the object to be tested, including direct contact and indirect contact. For example, when the temperature medium layer 121 is a solid material, the object to be tested may directly contact the temperature medium layer 121. When the temperature medium layer 121 is made of a liquid material, the temperature medium layer 121 may be placed in a housing or a container formed by the housing, the metal layer 122 and the substrate 123, and at this time, an object to be tested contacts the temperature medium layer 121 through the housing. See in particular the multilayer film structure 12 shown in fig. 3A-3B described below.

In order to allow laser light to be incident on the surface of the metal layer 122, the substrate 123 needs to have good light transmittance. Substrate 123 may be made of one or more materials of silicon dioxide, high boron silicon, and aluminosilicates. The thickness of the substrate 123 may be 100nm to 1mm, illustratively 100nm, 150nm, 100 μm, etc.

The metal layer 122 may be made of one or more metal materials such as silver, gold, or cobalt. The thickness d _m of the metal layer 122 is generally 50nm to 10 μm, and may be 100nm, 80nm, or the like. When laser light (typically, highly monochromatic laser light) is irradiated onto the metal layer 122, surface plasmons are generated on the surface of the metal layer 122 that contacts the temperature medium layer 121. The surface plasmon is an electromagnetic wave that propagates only along the first surface of the metal layer 122. A grating or cell array is formed by etching on the first surface of the metal layer 122 to control the propagation trajectory and focal position of the surface plasmons. Specific etched patterns may be referred to in the following description of fig. 4A to 4H, and will not be described herein.

The temperature medium layer 121 is a temperature sensitive material (also called temperature sensitive material), and the refractive index of the temperature medium layer 121 is affected by temperature change. The temperature medium layer 121 may be a liquid material or a solid material. The liquid material can be one or more materials of carbon disulfide, glycerol, chloroform, carbon tetrachloride and the like. The solid material may be one or more of germanium, bismuth, antimony, indium, cadmium, selenium, and the like. The thickness of the temperature medium layer 121 is generally 50nm to 10. Mu.m, and may be 200nm, 250nm, or the like.

Table 1 below exemplarily shows that silver is used as the metal layer 122, and laser light with a wavelength of 980nm is incident on the surface of the silver, simulating the refractive index of the 200nm thick temperature medium layer 121Wavelength of surface plasmon generated when changing from 1 to 3And (3) a change.

TABLE 1

Further, based on the correspondence between the refractive index of the temperature medium layer 121 and the temperature, the wavelength of the surface plasmon can be obtainedCorrespondence with temperature. It should be appreciated that the refractive index of the temperature medium layer 121 at different temperatures is an inherent property thereof, which can be obtained by measurement.

Exemplary, as shown in FIG. 2A, is a method according to an embodiment of the present applicationRefractive index with temperature medium layer 121Is a schematic diagram of the relationship of (a).

The gray scale corresponding to-pi to pi in fig. 2A represents the phase change of the surface plasmon, and different gray scales represent different phases of the surface plasmon. At the phase of any surface plasmon (i.e. gray fixation), it is measuredAnd/>Are all in negative correlation, i.e./>Smaller,/>The larger. As shown in FIG. 2B, an exemplary measurement of/>, when the phase of the surface plasmon is pi/2And/>Is a relationship of (2).

Receiver 13

The receiver 13 is configured to receive the surface plasmon and analyze the wavelength of the surface plasmon, and the analyzed wavelength is used to measure the temperature of the object to be tested. The receiver 13 may be an interferometer. The receiver 13 may utilize interference or diffraction principles to testIs of a size of (a) and (b).

In some embodiments, the temperature sensor 1 is provided on an electronic device. The electronic device includes a processor and a memory. The processor is coupled to the memory and the temperature sensor 1. The memory may store the correspondence of wavelength and temperature in advance.

The receiver 13 is further configured to send the analyzed wavelength to a processor, where the processor is configured to determine, according to the correspondence between the wavelength and the temperature, the temperature corresponding to the analyzed wavelength of the surface plasmon as the temperature of the object to be tested.

In other embodiments, a computing unit may also be provided in the temperature sensor 1. Fig. 1B is a schematic structural diagram of another temperature sensor 1 according to an embodiment of the present application. The temperature sensor 1 includes a calculation unit 14 in addition to the respective devices shown in fig. 1A described above.

The calculation unit 14 is used for storing the correspondence between the wavelength and the temperature. The receiver 13 is also used to send the analyzed wavelengths to the calculation unit 14. The calculating unit 14 is further configured to determine, according to the correspondence between the wavelength and the temperature, that the temperature corresponding to the wavelength of the surface plasmon obtained by analysis is the temperature of the object to be tested.

The computing unit 14 may be, in particular, a Field Programmable Gate Array (FPGA), an Application Specific Integrated Circuit (ASIC), or the like.

The temperature medium layer 121 in the multilayer film structure 12 of fig. 1A and 1B is illustrated as a solid material. In some embodiments, temperature medium layer 121 may be a liquid material, in which case multilayer film structure 12 further includes a housing or the like for enclosing temperature medium layer 121.

The structure of various multi-layer film structures 12 including a housing provided in accordance with embodiments of the present application is described below in connection with fig. 3A-3B.

The casing 124 has good thermal conductivity, so when the object to be tested indirectly contacts the temperature medium layer 121 through the casing 124, heat of the object to be tested can be quickly conducted to the temperature medium layer 121 through the casing 124, so that the refractive index of the temperature medium layer 121 accurately reflects the temperature of the object to be tested.

Fig. 3A is a schematic structural diagram of a multi-layer film structure 12 according to an embodiment of the present application.

Wherein the housing 124 may be used to encapsulate the temperature dielectric layer 121, the metal layer 122, and the substrate 123. At this time, the case 124 or the case 124 located at the side of the base 123 should have good light transmittance. The housing 124 may be made of one or more materials such as silicon dioxide, aluminum nitride, polymethyl methacrylate, and polycarbonate. In order to make the temperature sensor 1 small in size, the thickness of the case 124 is generally 1 μm to 1mm, and may be 500 μm, 300 μm, or the like. Wherein, the thickness of the housing 124 refers to the distance between the inner wall and the outer wall of the housing 124. The outer wall of the case 124 refers to the surface of the case 124 that contacts the object to be measured, and the inner wall refers to the surface of the case 124 that contacts the temperature medium layer 121.

The metal layer 122 and the substrate 123 are disposed within a housing 124, which is surrounded by a temperature medium layer 121. The metal layer 122 and the base 123 may be fixed to an inner wall of the case 124.

Alternatively, as shown in FIG. 3A, one way of securing is to provide a groove in the inner wall of the housing 124. The groove is recessed in a direction (also referred to as a thickness direction) from an inner wall to an outer wall of the housing 124. The upper and lower thicknesses of the grooves are the same as the total thickness of the metal layer 122 and the substrate 123 or slightly greater than the total thickness of the metal layer 122 and the substrate 123. Illustratively, the total thickness of the metal layer 122 and the substrate 123 is 200nm, the upper and lower thicknesses of the grooves are 200nm or 205nm, etc. The metal layer 122 and the substrate 123 may be fixed in the groove.

Fig. 3B is a schematic structural diagram of another multi-layer film structure 12 according to an embodiment of the present application.

The temperature medium layer 121 is encapsulated in a container formed by the casing 124 and the metal layer 122, and the casing 124 is fixed on the substrate 123 or the metal layer 122.

Alternatively, the housing 124 may be physically or chemically secured to the metal layer 122. In some embodiments, the housing 124 is secured to the metal layer 122 by an adhesive (i.e., a chemical process), such as a urea-formaldehyde resin, a phenolic resin, or the like. In other embodiments, the housing 124 is secured to the metal layer 122 by welding (i.e., physical means). Wherein the length of the outer shell 124 is less than or equal to the length of the metal layer 122. The length of the housing 124 refers to the distance between opposite outer walls of the housing 124 in the lateral direction. The length of the metal layer 122 refers to the distance the metal layer 122 extends in the lateral direction.

Here, the case 124 does not need to transmit light, and in this case, the case 124 may be made of a metal material or alloy such as iron, copper, or aluminum, or may be made of a material such as aluminum nitride, polymethyl methacrylate, polycarbonate, or silicon dioxide.

The following describes the etching pattern of the first surface of the metal layer 122 according to the embodiment of the present application with reference to fig. 4A to 4H.

In order to make the size of the temperature sensor 1 small enough or to be able to effectively use the space within the device, it is necessary to focus the surface plasmons on the receiver 13 from the surface of the metal layer 122 over a small propagation distance, and to enable the propagation path and focus position of the surface plasmons generated by the multilayer film structure 12 to match the position of the receiver 13. The above requirement can be met by etching a grating or an array of cells on the first surface of the metal layer 122, the resulting pattern after etching (also called etched pattern) will affect the propagation trajectory of the surface plasmons and the focus position on the receiver 13. The specific etching pattern is as follows:

Illustratively, the metal layer 122 includes a plurality of grooves thereon. In some embodiments, metal layer 122 may be etched through, where the recess reveals substrate 123, and the depth d of the recess is equal to the thickness d _m of metal layer 122. In other embodiments, the metal layer 122 is not completely etched, and the depth d of the groove is smaller than the thickness d _m of the metal layer 122. In an embodiment of the application, one groove is also referred to as a cell. These grooves may form a grating or an array of cells, respectively, as described below.

Grating

In some embodiments, the metal layer 122 includes a plurality of grooves thereon that are equally spaced along the first direction, the plurality of grooves forming the grating 1221. The first direction refers to any direction parallel to the plane of the metal layer 122 and is perpendicular to the extending direction of the groove. The plurality of grooves may be identical in shape, and the number of grooves is greater than or equal to 2.

Fig. 4A is a top view of a metal layer 122 according to an embodiment of the present application. As shown in fig. 4A, the metal layer 122 includes a plurality of (2 or more) grooves arranged at equal intervals on a line of the metal layer 122, and the grooves form a grating 1221. The recess may be arcuate in shape, also known as an open loop. The above-described requirement for the etching pattern is satisfied by controlling the width a of the grooves (i.e., the width of the slit) and the distance P between adjacent two grooves (also referred to as the period of the grating 1221). Illustratively, P is less than or equal to the wavelength of the laser light (i.e., the laser light emitted by the laser 11), and a is less than P, alternatively a=0.5×p or a is half the wavelength of the laser light. Illustratively, when the wavelength of the laser is equal to 980nm, a=450 nm, p=600 nm. Also exemplary, P is equal to a being the wavelength of the laser light, a being half the wavelength of the laser light, where a=0.5×p.

The depth d of the recess may be less than the thickness d _m of the metal layer 122, i.e., the metal layer 122 is not completely etched. Or d may be equal to d _m, immediately through metal layer 122.

Fig. 4B and 4C schematically illustrate two cross-sectional views at the metal layer 122.

A schematic diagram of an incompletely etched metal layer 122 is exemplarily shown in fig. 4B. Illustratively, d _m = 100nm, d = 60nm.

A schematic illustration of an etch through metal layer 122 is schematically shown in fig. 4C. Illustratively, d _m = 100nm, d = 100nm.

In other embodiments, the metal layer 122 may further include grooves with other shapes arranged along the first direction, resulting in gratings 1221 with different shapes. Illustratively, fig. 4D illustrates exemplary shapes of 3 possible gratings 1221. As shown in a diagram a in fig. 4D, the grating 1221 is formed by equally-spaced arrangement of a plurality of rectangular grooves. As shown in b-chart in fig. 4D, the grating 1221 is formed by arranging a plurality of diamond grooves at equal intervals. As shown in c-chart in fig. 4D, the grating 1221 is formed by arranging a plurality of elliptical grooves at equal intervals.

In other embodiments, the metal layer 122 may further include a plurality of (greater than or equal to 2) grooves with different shapes arranged at unequal intervals along the first direction, and the plurality of grooves may also form the grating 1221. Illustratively, rectangular, elliptical, diamond-shaped, and open annular grooves are sequentially arranged on the metal layer 122, and the distance between two adjacent grooves may be different, and the plurality of grooves may also form the grating 1221.

The grating 1221 may be etched on the surface of the metal layer 122 facing away from the substrate 123 by a photolithographic technique, such as electron beam etching. When the grating 1221 is etched on the surface of the metal layer 122, the propagation trajectory and the focus position of the surface plasmon can be determined according to the relative position between the metal layer 122 and the receiver 13 in the temperature sensor 1. The initial phase distribution of the grating 1221 is calculated from the propagation trajectory and focal position of the desired surface plasmons, thereby constructing the grating 1221 (i.e., determining the width a of a groove in the grating array and the distance P between two adjacent grooves).

Illustratively, fig. 4E shows a schematic representation of the propagation of a surface plasmon along a first surface of metal layer 122. The metal layer 122 includes a plurality of open annular grooves on a first surface thereof, forming a grating 1221. The surface plasmons propagate along the grating 1221 and are focused on the receiver 13.

Cell array

In some embodiments, a plurality of rows and columns of grooves (also referred to as an array) are included on the metal layer 122, and the grooves are distributed in an array to form an array of cells.

The cell array is typically composed of at least 4 grooves. Each groove is a unit 1222.

Illustratively, all of the grooves in the cell array are identical in shape.

Also illustratively, the grooves of the same row in the cell array are identical in shape; the shape of the grooves of the different rows is different.

Also illustratively, for each row of grooves, the spacing between adjacent two grooves is equal.

Also illustratively, the grooves of the same row are equally spaced, and the spacing between grooves of different rows may be different.

Also for example, the angles of the grooves of different rows may be different. The groove angle is the angle between the extending direction of the groove and one side of the metal layer 122.

The cell array can control the propagation trajectory and focus position of the surface plasmon by adjusting the shape (e.g., length b, width a, and depth d) of each groove and the distance P (i.e., pitch) between adjacent two grooves.

Fig. 4F is a top view of a metal layer 122 according to an embodiment of the present application. Wherein, the shape and the size of each groove are the same, and each groove is rectangular. The angles of the grooves of the different rows are different. Wherein P is less than or equal to the wavelength of the laser, and a is less than P and b is greater than a. Illustratively, when the wavelength of the laser is equal to 980nm, a=400 nm, b=450 nm, p=600 nm.

The depth d of each recess (i.e., the depth of the cells 1222) may be less than the thickness d _m of the metal layer 122, i.e., the metal layer 122 is not completely etched. Or d may be equal to d _m, immediately through metal layer 122. For example, the thickness d _m =100 nm of the metal layer 122, d=60 nm when the metal layer 122 is incompletely etched. When the metal layer 122 is etched through, d=100 nm.

In other embodiments, the grooves in the cell array (i.e., cells 1222) may be other shapes as well. Illustratively, fig. 4G shows an exemplary 3-cell array. As shown in a diagram a in fig. 4G, each unit 1222 may be diamond-shaped in shape. As shown in b-diagram in fig. 4G, the shape of each unit 1222 may be elliptical. As shown in c-diagram in fig. 4G, each unit 1222 may be shaped as an open ring.

Not limited to the metal layer 122 shown in fig. 4F and 4G, the shapes of the grooves in the rows and columns may be different, and the angles of the grooves in the different rows may be the same or different. Illustratively, the cell array is composed of 4 rows and 4 columns of grooves, the first row of grooves may be rectangular, the second row of grooves may be diamond-shaped, the third row of grooves may be oval-shaped, the fourth row of grooves may be open-ended annular, and the groove angles of the different rows are the same.

The array of cells may be etched on the first surface of the metal layer 122 by an electron beam etching method. When the cell array is etched on the surface of the metal layer 122, the distance of the metal layer 122 from the receiver 13 may be determined according to the size of the temperature sensor 1, thereby determining the propagation trajectory of the surface plasmon and the focus position on the receiver 13. By estimating the distribution of the initial phase of each cell 1222 in the cell array by the propagation trajectory of the surface plasmon and the focal position on the receiver 13, the initial cell array can be constructed in combination with the phase abrupt change carried by each cell 1222.

Fig. 4H schematically illustrates propagation of a surface plasmon on a first surface of the metal layer 122. The metal layer 122 includes at least 4 rectangular grooves on a first surface thereof to form a cell array. The surface plasmons propagate along the cell array and are focused on the receiver 13.

It should be understood that the shapes, numbers, etc. of the grooves shown in fig. 4A-4H are only illustrative, and in practical applications, more or fewer grooves may be included, and the shapes of the grooves may be other sizes, curvatures, etc.

A schematic diagram of a location of the temperature sensor 1 on an electronic device according to an embodiment of the present application is described below with reference to fig. 5.

Since the temperature sensor 1 is small enough in size, it can be conveniently provided on an electronic device. The electronic devices may include cell phones, hand rings, tablet computers, desktop computers, laptop computers, handheld computers, reader devices, and notebook computers, among others. By way of example, a schematic diagram of the location of the temperature sensor 1 on a mobile phone is shown in fig. 5. The temperature sensor 1 can be arranged at any position of four sides of the mobile phone. When the temperature sensor 1 is located on the upper side or the lower side of the mobile phone, a groove can be formed in the edge of the mobile phone, and the temperature sensor 1 is arranged in the groove. When the temperature sensor 1 is located at the left side or the right side of the mobile phone, the temperature sensor 1 may be integrally placed with a volume key or a power key.

An integrated system, which may be referred to as a sensor system, provided by embodiments of the present application is described below in connection with fig. 6A-6C.

Some electronic devices are provided with distance sensors, such as laser ranging sensors, for example, time of flight (TOF) sensors. In order to reduce the occupied space of the temperature sensor and improve the space utilization of the electronic device, the distance sensor and the temperature sensor may be integrated together such that the two share the laser.

In connection with fig. 6A, an embodiment of the present application proposes an integrated system comprising a temperature sensor 1 and a TOF sensor 3.

The integrated system includes, but is not limited to: a temperature sensor 1, a beam splitter 2 and a TOF sensor 3.

The relevant structure of the temperature sensor 1 and the function of each structure are referred to the above relevant description, and are not repeated here.

The beam splitter 2 is used to split the laser light emitted from the laser 11 into two laser light beams so that the temperature sensor 1 and the TOF sensor 3 can share the laser 11. Wherein one of the two laser beams is used for the temperature sensor 1 to measure the temperature. The other beam of light is used for distance measurement by the TOF sensor 3.

The TOF sensor 3 comprises a receiving end 31. The receiving end 31 is configured to receive the laser light reflected by the obstacle by the laser 11, and further determine the distance between the obstacle and the electronic device or the TOF sensor 3 based on the time difference between the emission time and the receiving time of the laser light.

The integrated system may be front-mounted or back-mounted on the electronic device. Illustratively, a schematic diagram of the location of an integrated system that is placed in front of an electronic device is shown schematically in fig. 6B. A schematic diagram of the integrated system post-placement in an electronic device is schematically shown in fig. 6C. When the integrated system is pre-positioned in the electronics, the temperature sensor 1 may be positioned adjacent to the TOF sensor 3, both of which may share the laser 11. Fig. 6B and 6C exemplarily illustrate the positional relationship of the laser 11, the receiving terminal 31, and the temperature medium layer 121 in the integrated system.

As shown in fig. 6B, the temperature medium layer 121 may be located on the right side of the laser 11.

As shown in fig. 6C, the temperature medium layer 121 may be located below the laser 11 and the receiving end 31.

Not limited to the positional relationship shown in fig. 6B and 6C described above, the laser 11, the receiving end 31, and the temperature medium layer 121 may be disposed at other positions of the electronic device.

The integrated system can be used for testing the temperature of an object to be tested by using the temperature sensor 1 and can also be used for testing the distance between the object to be tested and the TOF sensor 3 or the electronic equipment by using the TOF sensor 3. Compared with the temperature sensor 1 and the TOF sensor 3 which are independently arranged, the temperature sensor 1 and the TOF sensor 3 are integrated together, so that the occupied space is reduced, the electronic equipment is convenient to arrange on the small electronic equipment, and the body space of the electronic equipment is effectively saved. Moreover, the integrated system only needs to be provided with one hole, so that the number of holes formed in the electronic equipment is reduced.

It should be noted that, in the embodiment of the present application, the TOF sensor 3 is taken as an example, and in other embodiments, other types of distance sensors including lasers may be also used.

The following describes a temperature measurement method provided by the embodiment of the present application with reference to fig. 7A and 7B.

The method is based on the above-mentioned temperature sensor 1. Wherein the temperature sensor 1 may interact with a system (e.g. an application layer) on the electronic device. The application layer comprises a temperature measurement application module. The user can control the temperature sensor 1 to start or end the temperature measurement by operating on the application layer. FIG. 7A is a schematic flow chart of a temperature measurement method according to an embodiment of the present application, which may include, but is not limited to, some or all of the following steps:

s1: the thermometry application receives a user operation indicating to open the "thermometry" application.

S2: the thermometry application displays a thermometry interface in response to a user operation to open the "thermometry" application, which may include an open/close thermometry option box, a temperature data display box, etc., as shown in FIG. 7B.

S3: the thermometry application receives a user operation indicating to turn on the "thermometry" function. For example, as shown in fig. 7B, a user operation interface for measuring temperature is exemplarily shown, and the user right-swipes the open/close temperature measurement option box to open the "temperature measurement" function.

S4: the thermometry application sends a first instruction to the thermometry sensor driver in response to a user operation to turn on the "thermometry" function. The first instruction is used for starting the temperature sensor 1, namely, supplying power to the laser 11 in the temperature sensor 1, and the laser 11 emits laser light.

S5: the temperature sensor drives the start temperature sensor 1. After the start, the laser 11 emits laser light, and the temperature measurement is started. The temperature measured by the temperature sensor 1 at this time may be the temperature of the external environment.

S6: the body of the user contacts the contact surface of the temperature sensor 1. For example, a finger, forehead, tongue, wrist, etc. of the user may contact the contact surface of the temperature sensor 1.

S7: the temperature sensor 1 tests the temperature.

Specifically, the temperature sensor 1 may be a temperature sensor shown in fig. 1B, the receiver 13 may analyze the wavelength of the received surface plasmon, and send the analyzed wavelength to the calculation unit 14, and the calculation unit 14 may store the correspondence between the wavelength of the surface plasmon and the temperature in advance. The calculating unit 14 receives the wavelength measured by the receiver 13, and determines the temperature corresponding to the received wavelength based on the correspondence between the wavelength and the temperature, that is, the temperature of the measured object (user), that is, the temperature obtained by the test.

S8: the temperature sensor 1 sends the measured temperature to a thermometry application.

S9: the thermometry application receives the temperature sent by the temperature sensor 1 and displays the temperature. For example, in connection with a user interface for temperature measurement as shown in FIG. 7B, the temperature measurement application displays the temperature of the user in a temperature display frame.

S10: the thermometry application receives an operation by the user to turn off the "thermometry" function, e.g., the user clicks on the close thermometry option.

S11: the thermometry application sends a second instruction to the thermometry sensor driver in response to a user closing the "thermometry" function. The second instruction is used for instructing the temperature sensor to drive the closing temperature sensor 1.

S12: the temperature sensor drive turns off the temperature sensor 1.

In another implementation, the temperature sensor 1 may not include a computing unit, such as the temperature sensor shown in fig. 1A. At this time, the receiver 13 of the temperature sensor 1 may analyze the wavelength of the received surface plasmon, send the wavelength obtained by the analysis to the temperature sensor driver, and the temperature sensor driver sends the measured wavelength to the temperature measurement application.

Fig. 8 shows a schematic structural diagram of an electronic device 800.

The embodiment will be specifically described below taking the electronic device 800 as an example. It should be understood that the electronic device 800 shown in fig. 8 is merely one example, and that the electronic device 800 may have more or fewer components than shown in fig. 8, may combine two or more components, or split certain components, or may have a different configuration of components. The various components shown in the figures may be implemented in hardware, software, or a combination of hardware and software, including one or more signal processing and/or application specific integrated circuits.

The electronic device 800 may include: processor 810, external memory interface 820, internal memory 821, universal serial bus (universal serial bus, USB) interface 830, charge management module 840, power management module 841, battery 842, antenna 1, antenna 2, mobile communication module 850, wireless communication module 860, audio module 870, speaker 870A, receiver 870B, microphone 870C, ear-piece interface 870D, sensor module 880, keys 890, motor 891, indicator 892, camera 893, display 894, and subscriber identity module (subscriber identification module, SIM) card interface 895, among others. The sensor modules 880 may include, among other things, pressure sensors 880A, gyroscope sensors 880B, barometric pressure sensors 880C, magnetic sensors 880D, acceleration sensors 880E, distance sensors 880F, proximity sensors 880J, fingerprint sensors 880H, temperature sensors 880G, ambient light sensors 880L, and the like.

The processor 810 may include one or more processing units, such as: the processor 810 may include an application processor (application processor, AP), a modem processor, a graphics processor (graphics processing unit, GPU), an image signal processor (IMAGE SIGNAL processor, ISP), a controller, a memory, a video codec, a digital signal processor (DIGITAL SIGNAL processor, DSP), a baseband processor, and/or a neural Network Processor (NPU), etc. Wherein the different processing units may be separate devices or may be integrated in one or more processors.

The controller may be a neural hub and a command center of the electronic device 800, among others. The controller can generate operation control signals according to the instruction operation codes and the time sequence signals to finish the control of instruction fetching and instruction execution.

A memory may also be provided in the processor 810 for storing instructions and data. In some embodiments, the memory in processor 810 is a cache memory. The memory may hold instructions or data that the processor 810 has just used or recycled. If the processor 810 needs to reuse the instruction or data, it may be called directly from the memory. Repeated accesses are avoided and the latency of the processor 810 is reduced, thereby improving the efficiency of the system.

In some embodiments, the processor 810 may include one or more interfaces. The interfaces may include an integrated circuit (inter-INTEGRATED CIRCUIT, I2C) interface, an integrated circuit built-in audio (inter-INTEGRATED CIRCUIT SOUND, I2S) interface, a pulse code modulation (pulse code modulation, PCM) interface, a universal asynchronous receiver transmitter (universal asynchronous receiver/transmitter, UART) interface, a mobile industry processor interface (mobile industry processor interface, MIPI), a general-purpose input/output (GPIO) interface, a subscriber identity module (subscriber identity module, SIM) interface, and/or a universal serial bus (universal serial bus, USB) interface, among others.

The I2C interface is a bi-directional synchronous serial bus comprising a serial data line (SERIAL DATA LINE, SDA) and a serial clock line (derail clock line, SCL). In some embodiments, the processor 810 may contain multiple sets of I2C buses.

The I2S interface may be used for audio communication. In some embodiments, the processor 810 may contain multiple sets of I2S buses. The processor 810 may be coupled to the audio module 870 via an I2S bus to enable communication between the processor 810 and the audio module 870. In some embodiments, the audio module 870 may communicate audio signals to the wireless communication module 860 via the I2S interface to enable phone answering via a bluetooth headset.

PCM interfaces may also be used for audio communication to sample, quantize and encode analog signals. In some embodiments, the audio module 870 and the wireless communication module 860 may be coupled through a PCM bus interface. In some embodiments, the audio module 870 may also communicate audio signals to the wireless communication module 860 via the PCM interface to enable phone calls to be received via the bluetooth headset. Both the I2S interface and the PCM interface may be used for audio communication.

The UART interface is a universal serial data bus for asynchronous communications. The bus may be a bi-directional communication bus. It converts the data to be transmitted between serial communication and parallel communication. In some embodiments, a UART interface is typically used to connect the processor 810 with the wireless communication module 860. For example: the processor 810 communicates with a bluetooth module in the wireless communication module 860 through a UART interface to implement a bluetooth function. In some embodiments, the audio module 870 may communicate audio signals to the wireless communication module 860 through a UART interface to implement the function of playing music through a bluetooth headset.

The MIPI interface may be used to connect processor 810 to peripheral devices such as display 894, camera 893, etc. The MIPI interfaces include camera serial interfaces (CAMERA SERIAL INTERFACE, CSI), display serial interfaces (DISPLAY SERIAL INTERFACE, DSI), and the like. In some embodiments, processor 810 and camera 893 communicate through a CSI interface, implementing the photographing functions of electronic device 800. Processor 810 and display 894 communicate via a DSI interface to implement the display functionality of electronic device 800.

The GPIO interface may be configured by software. The GPIO interface may be configured as a control signal or as a data signal. In some embodiments, a GPIO interface may be used to connect processor 810 with camera 893, display 894, wireless communication module 860, audio module 870, sensor module 880, and the like. The GPIO interface may also be configured as an I2C interface, an I2S interface, a UART interface, an MIPI interface, etc.

The USB interface 830 is an interface conforming to the USB standard specification, and may specifically be a Mini USB interface, a Micro USB interface, a USB Type C interface, or the like. The USB interface 830 may be used to connect a charger to charge the electronic device 800, or may be used to transfer data between the electronic device 800 and a peripheral device. And can also be used for connecting with a headset, and playing audio through the headset. The interface may also be used to connect other electronic devices, such as AR devices, etc.

It should be understood that the connection between the modules illustrated in the embodiments of the present application is merely illustrative, and does not limit the structure of the electronic device 800. In other embodiments of the present application, the electronic device 800 may also employ different interfaces in the above embodiments, or a combination of interfaces.

The charge management module 840 is for receiving charge input from a charger. The charger can be a wireless charger or a wired charger. In some wired charging embodiments, the charge management module 840 may receive a charging input of a wired charger through the USB interface 830. In some wireless charging embodiments, the charge management module 840 may receive wireless charging input through a wireless charging coil of the electronic device 800. The charging management module 840 may also provide power to the electronic device through the power management module 841 while charging the battery 842.

The power management module 841 is configured to connect the battery 842, the charge management module 840 and the processor 810. The power management module 841 receives input from the battery 842 and/or the charge management module 840, and provides power to the processor 810, the internal memory 821, the external memory, the display 894, the camera 893, the wireless communication module 860, and the like. The power management module 841 may also be used to monitor battery capacity, battery cycle number, battery health (leakage, impedance) and other parameters. In other embodiments, the power management module 841 may also be disposed in the processor 810. In other embodiments, the power management module 841 and the charging management module 840 may also be provided in the same device.

The wireless communication function of the electronic device 800 may be implemented by the antenna 1, the antenna 2, the mobile communication module 850, the wireless communication module 860, a modem processor, a baseband processor, and the like.

The antennas 1 and 2 are used for transmitting and receiving electromagnetic wave signals. Each antenna in the electronic device 800 may be used to cover a single or multiple communication bands. Different antennas may also be multiplexed to improve the utilization of the antennas. For example: the antenna 1 may be multiplexed into a diversity antenna of a wireless local area network. In other embodiments, the antenna may be used in conjunction with a tuning switch.

The mobile communication module 850 may provide a solution for wireless communications, including 2G/3G/4G/5G, applied on the electronic device 800. The mobile communication module 850 may include at least one filter, switch, power amplifier, low noise amplifier (low noise amplifier, LNA), and the like. The mobile communication module 850 may receive electromagnetic waves from the antenna 1, perform processes such as filtering, amplifying, and the like on the received electromagnetic waves, and transmit the processed electromagnetic waves to the modem processor for demodulation. The mobile communication module 850 may amplify the signal modulated by the modem processor, and convert the signal into electromagnetic waves through the antenna 1 to radiate the electromagnetic waves. In some embodiments, at least some of the functional modules of the mobile communication module 850 may be disposed in the processor 810. In some embodiments, at least some of the functional modules of the mobile communication module 850 may be disposed in the same device as at least some of the modules of the processor 810.

The modem processor may include a modulator and a demodulator. The modulator is used for modulating the low-frequency baseband signal to be transmitted into a medium-high frequency signal. The demodulator is used for demodulating the received electromagnetic wave signal into a low-frequency baseband signal. The demodulator then transmits the demodulated low frequency baseband signal to the baseband processor for processing. The low frequency baseband signal is processed by the baseband processor and then transferred to the application processor. The application processor outputs sound signals through an audio device (not limited to speaker 870A, receiver 870B, etc.), or displays images or video through display screen 894. In some embodiments, the modem processor may be a stand-alone device. In other embodiments, the modem processor may be provided in the same device as the mobile communication module 850 or other functional module, independent of the processor 810.

The wireless communication module 860 may provide solutions for wireless communication including wireless local area network (wireless local area networks, WLAN) (e.g., wireless fidelity (WIRELESS FIDELITY, wi-Fi) network), bluetooth (BT), global navigation satellite system (global navigation SATELLITE SYSTEM, GNSS), frequency modulation (frequency modulation, FM), near field communication (NEAR FIELD communication, NFC), infrared (IR), etc., as applied to the electronic device 800. The wireless communication module 860 may be one or more devices that integrate at least one communication processing module. The wireless communication module 860 receives electromagnetic waves via the antenna 2, modulates the electromagnetic wave signals, filters the electromagnetic wave signals, and transmits the processed signals to the processor 810. The wireless communication module 860 may also receive signals to be transmitted from the processor 810, frequency modulate them, amplify them, and convert them to electromagnetic waves for radiation via the antenna 2.

In some embodiments, antenna 1 and mobile communication module 850 of electronic device 800 are coupled, and antenna 2 and wireless communication module 860 are coupled, such that electronic device 800 may communicate with a network and other devices through wireless communication techniques. The wireless communication techniques can include the Global System for Mobile communications (global system for mobile communications, GSM), general packet radio service (GENERAL PACKET radio service, GPRS), code division multiple access (code division multiple access, CDMA), wideband code division multiple access (wideband code division multiple access, WCDMA), time division code division multiple access (time-division code division multiple access, TD-SCDMA), long term evolution (long term evolution, LTE), BT, GNSS, WLAN, NFC, FM, and/or IR techniques, among others. The GNSS may include a global satellite positioning system (global positioning system, GPS), a global navigation satellite system (global navigation SATELLITE SYSTEM, GLONASS), a beidou satellite navigation system (beidou navigation SATELLITE SYSTEM, BDS), a quasi zenith satellite system (quasi-zenith SATELLITE SYSTEM, QZSS) and/or a satellite based augmentation system (SATELLITE BASED AUGMENTATION SYSTEMS, SBAS).

The electronic device 800 implements display functions via a GPU, a display screen 894, and an application processor, etc. The GPU is a microprocessor for image processing, and is connected to the display screen 894 and the application processor. The GPU is used to perform mathematical and geometric calculations for graphics rendering. Processor 810 may include one or more GPUs that execute program instructions to generate or change display information.

The display screen 894 is used to display images, videos, and the like. The display 894 includes a display panel. The display panel may employ a Liquid Crystal Display (LCD) CRYSTAL DISPLAY, an organic light-emitting diode (OLED), an active-matrix organic LIGHT EMITTING diode (AMOLED), a flexible light-emitting diode (FLED), miniled, microLed, micro-oLed, a quantum dot LIGHT EMITTING diode (QLED), or the like. In some embodiments, electronic device 800 may include 1 or N displays 894, N being a positive integer greater than 1.

Electronic device 800 may implement shooting functionality through an ISP, camera 893, video codec, GPU, display 894, and application processor, among others.

The ISP is used to process the data fed back by camera 893. For example, when photographing, the shutter is opened, light is transmitted to the camera photosensitive element through the lens, the optical signal is converted into an electric signal, and the camera photosensitive element transmits the electric signal to the ISP for processing and is converted into an image visible to naked eyes. ISP can also perform algorithm optimization on noise and brightness of the image. The ISP can also optimize parameters such as exposure, color temperature and the like of a shooting scene. In some embodiments, the ISP may be located in camera 893.

The camera 893 is used to capture still images or video. The object generates an optical image through the lens and projects the optical image onto the photosensitive element. The photosensitive element may be a charge coupled device (charge coupled device, CCD) or a Complementary Metal Oxide Semiconductor (CMOS) phototransistor. The photosensitive element converts the optical signal into an electrical signal, which is then transferred to the ISP to be converted into a digital image signal. The ISP outputs the digital image signal to the DSP for processing. The DSP converts the digital image signal into an image signal in a standard RGB, YUV, or the like format. In some embodiments, electronic device 800 may include 1 or N cameras 893, N being a positive integer greater than 1.

The digital signal processor is used for processing digital signals, and can process other digital signals besides digital image signals. For example, when the electronic device 800 is selecting a bin, the digital signal processor is used to fourier transform the bin energy, or the like.

Video codecs are used to compress or decompress digital video. The electronic device 800 may support one or more video codecs. Thus, the electronic device 800 may play or record video in a variety of encoding formats, such as: dynamic picture experts group (moving picture experts group, MPEG) 1, MPEG2, MPEG3, MPEG4, etc.

The NPU is a neural-network (NN) computing processor, and can rapidly process input information by referencing a biological neural network structure, for example, referencing a transmission mode between human brain neurons, and can also continuously perform self-learning. Applications such as intelligent awareness of the electronic device 800 may be implemented through the NPU, for example: image recognition, face recognition, speech recognition, text understanding, etc.

The external memory interface 820 may be used to connect an external memory card, such as a Micro SD card, to enable expansion of the memory capabilities of the electronic device 800. The external memory card communicates with the processor 810 through an external memory interface 820 to implement data storage functions. For example, files such as music, video, etc. are stored in an external memory card.

The internal memory 821 may be used to store computer-executable program code that includes instructions. The processor 810 executes various functional applications of the electronic device 800 and data processing by executing instructions stored in the internal memory 821. The internal memory 821 may include a stored program area and a stored data area. The storage program area may store an application program (such as a sound playing function, an image playing function, etc.) required for at least one function of the operating system, etc. The storage data area may store data created during use of the electronic device 800 (e.g., audio data, phonebook, etc.), and so on. In addition, the internal memory 821 may include a high-speed random access memory, and may further include a nonvolatile memory such as at least one magnetic disk storage device, a flash memory device, a universal flash memory (universal flash storage, UFS), and the like.

Electronic device 800 may implement audio functionality through audio module 870, speaker 870A, receiver 870B, microphone 870C, ear speaker interface 870D, and an application processor. Such as music playing, recording, etc.

The audio module 870 is used to convert digital audio information into an analog audio signal output and also to convert an analog audio input into a digital audio signal. The audio module 870 may also be used to encode and decode audio signals. In some embodiments, the audio module 870 may be disposed in the processor 810 or some functional modules of the audio module 870 may be disposed in the processor 810.

Speaker 870A, also known as a "horn," is used to convert audio electrical signals into sound signals. The electronic device 800 may listen to music, or to hands-free conversations, through the speaker 870A.

Receiver 870B, also referred to as a "receiver," is configured to convert the audio electrical signal into a sound signal. When electronic device 800 is answering a telephone call or voice message, voice may be received by placing receiver 870B close to the human ear.

Microphone 870C, also referred to as a "microphone" or "microphone," is used to convert sound signals into electrical signals. When making a call or transmitting voice information, the user can sound near the microphone 870C through the mouth, inputting a sound signal to the microphone 870C. The electronic device 800 may be provided with at least one microphone 870C. In other embodiments, the electronic device 800 may be provided with two microphones 870C, which may perform noise reduction functions in addition to collecting sound signals. In other embodiments, the electronic device 800 may also be provided with three, four, or more microphones 870C to enable collection of sound signals, noise reduction, identification of sound sources, directional recording functions, etc.

The earphone interface 870D is used to connect a wired earphone. Earphone interface 870D may be a USB interface 830 or a 3.5mm open mobile electronic device platform (open mobile terminal platform, OMTP) standard interface, a american cellular telecommunications industry association (cellular telecommunications industry association of the USA, CTIA) standard interface.

The pressure sensor 880A is used to sense a pressure signal, and may convert the pressure signal into an electrical signal. In some embodiments, pressure sensor 880A may be provided on display 894. The pressure sensor 880A is of various kinds, such as a resistive pressure sensor, an inductive pressure sensor, a capacitive pressure sensor, and the like. The capacitive pressure sensor may be a capacitive pressure sensor comprising at least two parallel plates with conductive material. When a force is applied to the pressure sensor 880A, the capacitance between the electrodes changes. The electronic device 800 determines the strength of the pressure from the change in capacitance. When a touch operation is applied to the display screen 894, the electronic apparatus 800 detects the intensity of the touch operation according to the pressure sensor 880A. The electronic device 800 may also calculate the location of the touch based on the detection signal of the pressure sensor 880A. In some embodiments, touch operations that act on the same touch location, but at different touch operation strengths, may correspond to different operation instructions. For example: and executing an instruction for checking the short message when the touch operation with the touch operation intensity smaller than the first pressure threshold acts on the short message application icon. And executing an instruction for newly creating the short message when the touch operation with the touch operation intensity being greater than or equal to the first pressure threshold acts on the short message application icon.

The gyro sensor 880B may be used to determine a motion gesture of the electronic device 800. In some embodiments, the angular velocity of electronic device 800 about three axes (i.e., x, y, and z axes) may be determined by gyro sensor 880B. The gyro sensor 880B may be used for photographing anti-shake. For example, when the shutter is pressed, the gyro sensor 880B detects the shake angle of the electronic device 800, calculates the distance to be compensated by the lens module according to the angle, and makes the lens counteract the shake of the electronic device 800 through the reverse motion, thereby realizing anti-shake. The gyro sensor 880B may also be used for navigating, somatosensory game scenes.

The air pressure sensor 880C is used to measure air pressure. In some embodiments, electronic device 800 calculates altitude from barometric pressure values measured by barometric pressure sensor 880C, aiding in positioning and navigation.

The magnetic sensor 880D includes a hall sensor. The electronic device 800 may detect the opening and closing of the flip holster using the magnetic sensor 880D. In some embodiments, when the electronic device 800 is a flip machine, the electronic device 800 may detect the opening and closing of the flip according to the magnetic sensor 880D. And then according to the detected opening and closing state of the leather sheath or the opening and closing state of the flip, the characteristics of automatic unlocking of the flip and the like are set.

The acceleration sensor 880E can detect the magnitude of acceleration of the electronic device 800 in various directions (typically three axes). The magnitude and direction of gravity may be detected when the electronic device 800 is stationary. The electronic equipment gesture recognition method can also be used for recognizing the gesture of the electronic equipment, and is applied to horizontal and vertical screen switching, pedometers and other applications.

A distance sensor 880F for measuring distance. The distance sensor 880F may also be the TOF sensor 3 in the embodiment of the present application. The electronic device 800 may measure the distance by a laser.

The temperature sensor 880G detects temperature. The temperature sensor 880G may be the temperature sensor shown in fig. 1A. The electronic device 800 detects the temperature of the object to be tested by using the temperature sensor 880G, and the specific implementation can be seen in the temperature measurement method shown in fig. 7A.

In some embodiments, temperature sensor 880G and distance sensor 880F may be integrated together, as shown in fig. 6A.

In other embodiments, temperature sensor 880G and distance sensor 880F may be provided separately from electronic device 800.

Proximity light sensor 880J may include, for example, a Light Emitting Diode (LED) and a light detector, such as a photodiode. The light emitting diode may be an infrared light emitting diode. The electronic device 800 emits infrared light outward through the light emitting diode. The electronic device 800 uses a photodiode to detect infrared reflected light from nearby objects. When sufficient reflected light is detected, it may be determined that an object is in the vicinity of the electronic device 800. When insufficient reflected light is detected, the electronic device 800 may determine that there is no object in the vicinity of the electronic device 800. The electronic device 800 may detect that the user holds the electronic device 800 in close proximity to the ear using the proximity light sensor 880J to automatically extinguish the screen for power saving purposes. The proximity light sensor 880J may also be used in holster mode, pocket mode to automatically unlock and lock the screen.

The ambient light sensor 880L is used to sense ambient light level. The electronic device 800 may adaptively adjust the brightness of the display 894 based on perceived ambient light levels. The ambient light sensor 880L may also be used to automatically adjust white balance when taking a photograph. Ambient light sensor 880L may also cooperate with proximity light sensor 880J to detect if electronic device 800 is in a pocket to prevent false touches.

The fingerprint sensor 880H is used to collect a fingerprint. The electronic device 800 may utilize the collected fingerprint characteristics to unlock the fingerprint, access the application lock, photograph the fingerprint, answer the incoming call, etc.

Keys 890 include a power-on key, volume key, etc. The keys 890 may be mechanical keys. Or may be a touch key. The electronic device 800 may receive key inputs, generating key signal inputs related to user settings and function controls of the electronic device 800.

The motor 891 may generate a vibration alert. The motor 891 may be used for incoming call vibration alerting as well as for touch vibration feedback. For example, touch operations acting on different applications (e.g., photographing, audio playing, etc.) may correspond to different vibration feedback effects. The motor 891 may also correspond to different vibration feedback effects by touch operations applied to different areas of the display screen 894. Different application scenarios (such as time reminding, receiving information, alarm clock, game, etc.) can also correspond to different vibration feedback effects. The touch vibration feedback effect may also support customization.

The indicator 892 may be an indicator light, may be used to indicate a state of charge, a change in charge, a message indicating a missed call, a notification, etc.

The SIM card interface 895 is used to connect to a SIM card. The SIM card may be inserted into the SIM card interface 895, or removed from the SIM card interface 895, to enable contact and separation with the electronic device 800. The electronic device 800 may support 1 or N SIM card interfaces, N being a positive integer greater than 1. The SIM card interface 895 may support Nano SIM cards, micro SIM cards, and the like. The same SIM card interface 895 may be used to insert multiple cards simultaneously. The types of the plurality of cards may be the same or different. The SIM card interface 895 may also be compatible with different types of SIM cards. The SIM card interface 895 may also be compatible with external memory cards. The electronic device 800 interacts with the network through the SIM card to realize functions such as communication and data communication. In some embodiments, the electronic device 800 employs esims, i.e.: an embedded SIM card. The eSIM card can be embedded in the electronic device 800 and cannot be separated from the electronic device 800.

In the embodiment of the present application, the processor 810 reads information in the internal memory 821, and combines the hardware thereof to perform functions required to be performed by units included in the electronic device 800 of the embodiment of the present application, or to perform a temperature measurement method of the embodiment of the present application.

The specific implementation of each functional unit described in fig. 8 may be referred to the related description in the embodiment of the temperature measurement method shown in fig. 7A, and the embodiment of the present application is not repeated.

It should be understood that each step in the above method embodiments provided by the present application may be implemented by an integrated logic circuit of hardware in a processor or an instruction in software form. The steps of the method disclosed in connection with the embodiments of the present application may be embodied directly in a hardware processor for execution, or in a combination of hardware and software modules in the processor for execution.

The present application also provides a computer program product comprising: a computer program (which may also be referred to as code, or instructions), when executed, causes a computer to perform the method of thermometry performed by the electronic device in any of the embodiments described above.

The present application also provides a computer-readable storage medium having a computer program (which may also be referred to as code, or instructions) stored thereon. When the computer program is run, the computer is caused to perform the temperature measurement method of any of the embodiments described above, in which electrons are the present execution.

The embodiments of the present application may be arbitrarily combined to achieve different technical effects.

In the above embodiments, it may be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented in software, may be implemented in whole or in part in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, the processes or functions in accordance with the present application are fully or partially produced. The computer may be a general purpose computer, a special purpose computer, a computer network, or other programmable apparatus. The computer instructions may be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another computer-readable storage medium, for example, the computer instructions may be transmitted from one website, computer, server, or data center to another website, computer, server, or data center by a wired (e.g., coaxial cable, fiber optic, digital subscriber line), or wireless (e.g., infrared, wireless, microwave, etc.). Computer readable storage media can be any available media that can be accessed by a computer or data storage devices, such as servers, data centers, etc., that contain an integration of one or more available media. Usable media may be magnetic media (e.g., floppy disk, hard disk, magnetic tape), optical media (e.g., DVD), or semiconductor media (e.g., solid state disk Solid STATE DISK), etc.

Those of ordinary skill in the art will appreciate that implementing all or part of the above-described method embodiments may be accomplished by a computer program to instruct related hardware, the program may be stored in a computer readable storage medium, and the program may include the above-described method embodiments when executed. And the aforementioned storage medium includes: ROM or random access memory RAM, magnetic or optical disk, etc.

In summary, the foregoing is merely an example of the technical solution of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made according to the disclosure of the present invention should be included in the protection scope of the present invention.

Claims

1. A temperature sensor, comprising: lasers, multilayer film structures, and receivers; the multilayer film structure comprises a substrate, a metal layer arranged on the first surface of the substrate and a temperature medium layer arranged on the surface of the metal layer, which is away from the substrate; the substrate is made of transparent materials;

The laser is used for generating laser;

The substrate is used for supporting the metal layer;

2. The temperature sensor of claim 1, wherein the temperature medium layer is a liquid material; the temperature sensor further includes a housing;

3. The temperature sensor of claim 2, wherein the material of the temperature medium layer comprises at least one of carbon disulfide, glycerol, chloroform, and carbon tetrachloride; the material of the housing includes at least one of copper, aluminum, silicon dioxide, aluminum nitride, polymethyl methacrylate, and polycarbonate.

4. The temperature sensor of claim 1, wherein the temperature medium layer is a solid material; the material of the temperature medium layer comprises at least one of germanium, bismuth, antimony, indium, cadmium and selenium.

5. The temperature sensor of any one of claims 1-4, wherein the metal layer comprises a plurality of grooves.

6. The temperature sensor of claim 5, wherein the plurality of grooves are equally spaced along the first direction, the spacing being no greater than a wavelength of laser light emitted by the laser.

7. The temperature sensor of claim 6, wherein the plurality of grooves are identical in shape.

8. The temperature sensor of claim 5, wherein the plurality of grooves are distributed in an array over the metal layer.

9. The temperature sensor of claim 8, wherein the plurality of grooves are identical in shape.

10. The temperature sensor of claim 8, wherein the grooves of the same row are identical in shape; the shape of the grooves of the different rows is different.

11. A temperature sensor according to claim 9 or 10, wherein the grooves of the same row are arranged at equal intervals, the intervals being no greater than the wavelength of the laser light emitted by the laser.

12. The temperature sensor of claim 9 or 10, wherein the plurality of grooves comprises two rows of grooves of different angles.

13. The temperature sensor of claim 5, wherein the depth of the recess is less than or equal to the thickness of the metal layer.

14. The temperature sensor according to any one of claims 1 to 4, further comprising a calculation unit;

15. A sensor system comprising a distance sensor, a beam splitter and a temperature sensor according to any one of claims 1-14; the distance sensor and the temperature sensor share the laser;

16. An electronic device comprising one or more processors, one or more memories, and a temperature sensor according to any of claims 1-13; wherein the one or more memories are coupled with the one or more processors;

17. An electronic device comprising a temperature sensor according to any one of claims 1-14 or comprising a sensor system according to claim 15.

18. A method of temperature measurement, applied to an electronic device comprising a temperature sensor according to any one of claims 1-13, the method comprising:

19. A computer readable storage medium comprising instructions which, when run on an electronic device, cause the method of claim 18 to be performed.