CN117418316A - Method for improving gallium nitride growth rate - Google Patents
Method for improving gallium nitride growth rate Download PDFInfo
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- CN117418316A CN117418316A CN202311457282.3A CN202311457282A CN117418316A CN 117418316 A CN117418316 A CN 117418316A CN 202311457282 A CN202311457282 A CN 202311457282A CN 117418316 A CN117418316 A CN 117418316A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 229910002601 GaN Inorganic materials 0.000 title claims description 54
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 28
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 60
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 37
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims abstract description 22
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 13
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 13
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 10
- 239000012265 solid product Substances 0.000 abstract description 10
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002994 raw material Substances 0.000 abstract description 8
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 abstract description 6
- 235000019270 ammonium chloride Nutrition 0.000 abstract description 4
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000000047 product Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910005224 Ga2O Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- -1 inGaN Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention adopts metallic gallium and Ga 2 O 3 The powder mixture is used as Ga source in the GaN growth process, changes the mode of using metallic gallium as Ga source in the traditional HVPE, and can effectively produce Ga 2 O gas prevents excessive ammonium chloride solid products generated by the traditional reaction of GaCl and ammonia gas from blocking the outlet of equipment, and improves the utilization rate of raw materials, the growth rate of GaN, the crystal quality and the like. Because of the reduction of solid products, the HVPE device can be operated for a long time, the cleaning of the device is not required in a short time, and the growth of the centimeter-sized large-size GaN single crystal ingot can be performed.
Description
Technical Field
The invention relates to a method for improving the growth rate of gallium nitride, belonging to the technical field of semiconductor materials.
Background
Group III-V nitride materials (also called GaN-based materials) mainly composed of GaN, inGaN, and AlGaN alloy materials are new semiconductor materials that have been gaining attention internationally in recent years.
There are various methods for growing GaN-based materials, such as metal organic vapor phase epitaxy (MOCVD), high temperature and high pressure synthesis of GaN single crystals, molecular Beam Epitaxy (MBE), sublimation, and Hydride Vapor Phase Epitaxy (HVPE). The growth of GaN bulk single crystals has great difficulty due to the limitation of physical properties of GaN-based materials themselves, and has not been put to practical use. Hydride vapor phase epitaxy is widely paid attention to and studied because of its high growth rate and lateral-longitudinal epitaxy ratio, and can be used for homoepitaxial growth of self-supporting GaN substrates.
In the existing HVPE system, the pre-reaction of ammonia and GaCl can block the pipeline, resulting in termination of GaCl reaction gas transport, which prevents further progress of the reaction. The present invention proposes an innovative method for the above problems, and can be applied exclusively to long-time growth of a centimeter-sized large-sized GaN bulk single crystal material, in addition to basic application, because of continuous operation.
The basic reaction of conventional HVPE methods to grow gallium nitride is as follows:
low temperature zone
GaCl+NH 3 →GaN+HCl+H 2 (1) High temperature zone
In fact, in addition to the above chemical reaction (1), gaseous Ga is in a high temperature condition 2 O may also be NH with 3 The reaction produces gallium nitride, and the chemical reaction formula can be expressed as:
the product being gallium nitride and H only 2 And O gas, so that the generation of a large amount of ammonium chloride is avoided.
For Ga 2 The production of O is a number of processes in the literature. The method comprises the following steps: under high temperature conditions, using an oxygen-containing oxidizing agent (H) 2 O/N 2 O) oxidizing metal Ga to obtain Ga 2 O：
The second method is as follows: under high temperature conditions, using a reducing agent (C/H) 2 ) Reduction of metal oxide Ga 2 O 3 Obtaining Ga 2 O：
Both methods can be used for preparing GaN thin films, but have great problems such as generation of a large amount of byproducts, low utilization of raw materials, and the like. If C or N is used 2 The O and the product may have toxic gases such as NO, CO and the like, and the tail gas has dangerousness and does not meet the requirements of environmental protection.
In fact, in addition to the use of the usual reducing agents C and H 2 In addition, metal Ga can be used directly with Ga 2 O 3 Mixing the powder and reacting at high temperature to produce Ga 2 O：
The product of the method is Ga only 2 O, so the theoretical utilization rate of raw materials is higher.
Disclosure of Invention
The invention aims to provide a method for improving the growth rate of gallium nitride, which can improve the growth rate of gallium nitride while reducing solid products.
The technical scheme adopted by the invention is as follows:
a method for increasing the growth rate of gallium nitride, comprising: in HVPE growth system, metal Ga and Ga 2 O 3 The mixture of the powder is used as Ga source to replace the original gallium metal source.
Preferably, the metals Ga and Ga 2 O 3 The molar ratio of (2) is more than 4:1. Theoretically, metals Ga and Ga 2 O 3 The molar ratio of (2) is 4: in the process 1, the metal Ga can completely react to generate Ga2O, and the metal Ga can also react to generate GaN through the reaction (1), so that the molar ratio of the metal Ga and the GaN is not lower than 4:1, and the GaN single crystal material can be obtained. More preferably, the molar ratio is in the range of 4 to 8:1.
Preferably, the method comprises the following steps:
(1) Metal gallium and Ga 2 O 3 Mixing the powder, and placing the powder in a gallium boat in an HVPE reaction chamber;
(2) And (3) placing the substrate into a reactor, heating to a growth temperature, and introducing a reaction gas to grow GaN. The reaction process is to control the temperature and to introduce chemical gases into the mixture, metal Ga and Ga 2 O 3 Reaction to produce Ga 2 O gas (nitrogen or argon and nitrogen mixed gas or nitrogen and hydrogen mixed gas) or Ga 2 And (3) conveying the mixed gas of O/GaCl (when hydrogen chloride is introduced in addition to the gas) to the surface of the substrate to react with ammonia gas to form gallium nitride.
Preferably, the substrate is cleaned prior to being placed in the reactor.
Preferably, the substrate is a sapphire substrate.
Preferably, the reaction temperature of the gallium source region in the step (2) is 1050-1300 ℃.
Preferably, the temperature of the growth zone of step (2) is 900-1100 ℃.
Preferably, the reaction gas in the step (2) is nitrogen, argon, hydrogen chloride and any combination of the above gases, the reaction gas in the growth zone is ammonia, and the carrier gas is nitrogen.
Preferably, the reactor pressure in step (2) is maintained at 1 atmosphere.
The invention changes the mode of adopting gallium metal as gallium source in the traditional HVPE, and adopts gallium metal and Ga as raw materials 2 O 3 Powder mixture, ga produced by reaction (5) 2 O reacts with ammonia gas to grow gallium nitride. Because the original HVPE system does not need to change the structure, the hydrogen and the hydrogen chloride in the original system can still be used, and the reaction (1) and the reaction (4) (hydrogen reduction) can be simultaneously utilized to further improve the growth rate of gallium nitride by introducing the hydrogen and the hydrogen chloride into the raw materials. In addition, when hydrogen chloride and gallium metal are introduced for reaction, the generated hydrogen can also react with Ga 2 O 3 Reaction to produce Ga 2 And O, further improving the utilization rate of raw materials and the growth rate. Reactions (5), (1) and (4) above can be carried out by changing the gas (hydrogen chloride or H) introduced during gallium nitride growth 2 ) May alternate with each other. The reaction process also comprisesThe deposition of solid products on the gas lines can be reduced.
The invention has the beneficial effects that: the invention adopts metallic gallium and Ga 2 O 3 The powder mixture can be used as raw material to effectively produce Ga 2 O gas prevents excessive ammonium chloride solid products generated by the traditional reaction of GaCl and ammonia gas from blocking the outlet of equipment, and improves the utilization rate of raw materials, the growth rate of GaN, the crystal quality and the like. Because of the reduction of solid products, the HVPE device can be operated for a long time, the cleaning of the device is not required in a short time, and the growth of the centimeter-sized large-size GaN single crystal ingot can be performed. This is the main field of application of the present invention.
Drawings
FIG. 1 shows metallic gallium and Ga 2 O 3 Photographs of the powder mixture.
Detailed Description
The HVPE system used in the present invention is generally a dual temperature zone structure, divided into a gallium source zone and a growth zone, and a specific structure may employ a conventional HVPE system. Introducing a reaction gas into a gallium source, and introducing the generated gas product into a growth region, wherein the gas product is formed on the surface of the substrate and NH 3 The mixing reacts to form GaN. The reaction temperature of the gallium source region in the invention is different from that of the gallium source region which is conventionally used as the gallium source, and the gallium source region can be used with higher reaction temperature because of the gallium and the Ga 2 O 3 Powder mixing to produce Ga at 1100 DEG C 2 The amount of O increases rapidly, peaking at around 1300 ℃. The theoretical growth rate of GaN can exceed 1 mm/hr by adopting the method of the invention.
Example 1
A method for increasing the growth rate of gallium nitride, comprising the steps of:
1. metal gallium and Ga 2 O 3 The powders were thoroughly mixed, as shown in FIG. 1, with gallium and Ga 2 O 3 The molar ratio is 4:1, placed in a gallium boat in an HVPE reaction chamber.
2. Cleaning and processing of sapphire substrates.
3. After the sapphire substrate is placed in the reactor, the temperature is slowly increased to the growth temperature, and then GaN can be grown. Gallium sourceThe region temperature is 1200 ℃, and the GaN growth region temperature is 1050 ℃. The gas flow rates are respectively: NH (NH) 3 Flow rate is 2000sccm, NH 3 The flow rate of the carrier gas N2 is 1000sccm, the gas introduced into the gallium boat is only nitrogen, and the flow rate is 500sccm. The total nitrogen was 15000sccm. The sample was a2 inch sapphire substrate. The reaction chamber pressure was 1 atmosphere.
4. After growing for a suitable period of time, the temperature is slowly reduced to room temperature at a certain rate, and the sample is taken out.
5. The sample surface is black, the growth rate of the tested sample is about 650 um/hour and far exceeds the growth rate of conventional HVPE, and the half-peak width (002) of the X-ray rocking curve is about 235arcsec, which is close to the mass of the sapphire substrate gallium metal as a source. Almost no solid product was observed at the exit of the apparatus, and almost all of the gallium source in the gallium boat was reacted completely.
Example 2
A method for increasing the growth rate of gallium nitride, comprising the steps of:
1. metal gallium and Ga 2 O 3 Mixing the powder thoroughly, metal gallium and Ga 2 O 3 The molar ratio is 8:1, placed in a gallium boat in an HVPE reaction chamber.
2. Cleaning and processing of sapphire substrates.
3. After the sapphire substrate is placed in the reactor, the temperature is slowly increased to the growth temperature, and then GaN can be grown. The gallium source region temperature is 1100 ℃, and the GaN growth region temperature is 1050 ℃. The gas flow rates are respectively: NH (NH) 3 Flow rate is 2000sccm, NH 3 The flow rate of the carrier gas is 1000sccm, the gas introduced into the gallium boat is only nitrogen, and the flow rate is 500sccm. The total nitrogen was 15000sccm. The sample was a2 inch sapphire substrate. The reaction chamber pressure was 1 atmosphere.
4. And 3, after a certain time, introducing hydrogen chloride into the gallium boat to continue growing. The gas flow rates are respectively: NH (NH) 3 Flow rate is 2000sccm, NH 3 The flow rate of carrier gas N2 is 1000sccm, hydrogen chloride is introduced into the gallium boat, the flow rate is 50sccm, the carrier gas of hydrogen chloride is N2, and other conditions are unchanged. The total nitrogen was 15000sccm. The sample was a2 inch sapphire substrate. The reaction chamber pressure was 1 atmosphere.
5. After growing for a suitable period of time, the temperature is slowly reduced to room temperature at a certain rate, and the sample is taken out.
6. The growth rate of the tested sample is about 560 um/hour, the half-peak width (002) of the X-ray rocking curve is about 148arcsec, a small amount of white solid product is arranged at the outlet of the equipment, ammonium chloride is needed, and the gallium source in the gallium boat is completely reacted. The samples prepared using hydrogen chloride were more transparent than the sample surface of example 1, indicating that the quality of the prepared samples was higher than that of example 1.
In this example, more gallium metal is added, gallium nitride is grown by reaction (5) first, and then gallium nitride is grown by reaction (1). The adoption of hydrogen chloride is also beneficial to gallium nitride microcrystals and the like generated by the corrosion space reaction.
Example 3
A method for increasing the growth rate of gallium nitride, comprising the steps of:
1. metal gallium and Ga 2 O 3 Mixing the powder thoroughly, metal gallium and Ga 2 O 3 The molar ratio is 5:1, placed in a gallium boat in an HVPE reaction chamber.
2. Cleaning and processing of sapphire substrates.
3. After the sapphire substrate is placed in the reactor, the temperature is slowly increased to the growth temperature, and then GaN can be grown. The temperature of the gallium source region is 1300 ℃, and the temperature of the GaN growth region is 1050 ℃. The gas flow rates are respectively:
NH 3 flow rate is 2000sccm, NH 3 The flow rate of the carrier gas is 1000sccm, the gas introduced into the gallium boat is mixed gas of nitrogen and hydrogen, and the flow rate of the nitrogen/hydrogen is 500/500sccm. The total nitrogen was 15000sccm. The sample was a2 inch sapphire substrate. The reaction chamber pressure was 1 atmosphere.
4. After growing for a suitable period of time, the temperature is slowly reduced to room temperature at a certain rate, and the sample is taken out. The average growth rate in this example was about 600 microns/hour, but the sample thickness and growth time were both higher than in example 1.
5. The half-width (002) of the X-ray rocking curve of the tested sample was about 108arcsec, and almost no solid product was observed at the exit of the apparatus, and almost all of the gallium source in the gallium boat was reacted completely.
Ga 2 O 3 The particle size of the powder is finer than 200 mesh. In general, the finer the particle size of the powder, the more advantageous the reaction proceeds.
Comparative example 1
1. Gallium metal is placed in a gallium boat in an HVPE reaction chamber.
2. Cleaning and processing of sapphire substrates.
3. After the sapphire substrate is placed in the reactor, the temperature is slowly increased to the growth temperature, and then GaN can be grown. Gallium source region temperature 900 ℃ and growth temperature 1050 ℃. The gas flow rates are respectively: NH (NH) 3 Flow rate is 2000sccm, NH 3 The flow rate of the carrier gas N2 is 1000sccm, the gas introduced into the gallium boat is only nitrogen, and the flow rate is 500sccm. The total nitrogen was 15000sccm. The sample was a2 inch sapphire substrate. The reaction chamber pressure was 1 atmosphere.
4. After growing for a suitable period of time, the temperature is slowly reduced to room temperature at a certain rate, and the sample is taken out.
5. The sample surface was black, and the growth rate of the sample was about 128 um/hr, and the half-peak width (002) of the X-ray rocking curve was about 360arcsec. A significant solid product was observed at the exit of the apparatus.
Only gallium metal is used as a gallium source, the gallium source region temperature is 900 ℃, the growth temperature is 1050 ℃ which is the most suitable growth condition, and the growth rate and the sample quality of the crystal can reach better balance. By increasing the temperature, the growth rate of the crystal is increased, but the increase is smaller, and the growth rate does not exceed 200 um/hour.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (9)
1. A method for increasing the growth rate of gallium nitride, comprising: in HVPE growth system, metal Ga and Ga 2 O 3 The mixture of powders served as the Ga source.
2. A method of increasing the growth rate of gallium nitride according to claim 1, wherein: the metals Ga and Ga 2 O 3 The molar ratio of (2) is more than 4:1.
3. Method for increasing the growth rate of gallium nitride according to claim 1 or 2, characterized in that it comprises the steps of:
(1) Metal gallium and Ga 2 O 3 Mixing the powder, and placing the powder in a gallium boat in an HVPE reaction chamber;
(2) And (3) placing the substrate into a reactor, heating to a growth temperature, and introducing a reaction gas to grow GaN.
4. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the substrate is subjected to a cleaning process prior to being placed in the reactor.
5. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the substrate is a sapphire substrate, silicon or silicon carbide.
6. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the temperature of the gallium source region in the step (2) is 900-1300 ℃.
7. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the temperature of the growth area in the step (2) is 900-1100 ℃.
8. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the reaction gas in the step (2) is nitrogen, argon, hydrogen chloride and any combination of the gases, the reaction gas in the growth zone is ammonia, and the carrier gas is nitrogen.
9. A method of increasing the growth rate of gallium nitride according to claim 3, wherein: the reaction chamber pressure in step (2) was maintained at 1 atmosphere.
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