CN117418208A - Connector coating method and preparation process thereof - Google Patents
Connector coating method and preparation process thereof Download PDFInfo
- Publication number
- CN117418208A CN117418208A CN202311010895.2A CN202311010895A CN117418208A CN 117418208 A CN117418208 A CN 117418208A CN 202311010895 A CN202311010895 A CN 202311010895A CN 117418208 A CN117418208 A CN 117418208A
- Authority
- CN
- China
- Prior art keywords
- coating
- connector
- deep hole
- hole device
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 188
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 172
- 238000007747 plating Methods 0.000 claims abstract description 64
- 239000000956 alloy Substances 0.000 claims abstract description 40
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000009434 installation Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims description 48
- 230000008021 deposition Effects 0.000 claims description 40
- 239000010949 copper Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052802 copper Inorganic materials 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000013178 mathematical model Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 238000001746 injection moulding Methods 0.000 claims description 14
- 239000013077 target material Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 229910001369 Brass Inorganic materials 0.000 claims description 11
- 239000010951 brass Substances 0.000 claims description 11
- 238000005266 casting Methods 0.000 claims description 11
- 238000005498 polishing Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- QZLJNVMRJXHARQ-UHFFFAOYSA-N [Zr].[Cr].[Cu] Chemical compound [Zr].[Cr].[Cu] QZLJNVMRJXHARQ-UHFFFAOYSA-N 0.000 claims description 10
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 238000003754 machining Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 238000005477 sputtering target Methods 0.000 claims description 4
- 239000000155 melt Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 110
- 238000001755 magnetron sputter deposition Methods 0.000 description 12
- 239000007888 film coating Substances 0.000 description 9
- 238000009501 film coating Methods 0.000 description 9
- 229910017526 Cu-Cr-Zr Inorganic materials 0.000 description 6
- 229910017810 Cu—Cr—Zr Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 244000241796 Christia obcordata Species 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910000906 Bronze Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000010974 bronze Substances 0.000 description 2
- XTYUEDCPRIMJNG-UHFFFAOYSA-N copper zirconium Chemical compound [Cu].[Zr] XTYUEDCPRIMJNG-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- PPIIGEJBVZHNIN-UHFFFAOYSA-N [Cu].[Sn].[Pb] Chemical compound [Cu].[Sn].[Pb] PPIIGEJBVZHNIN-UHFFFAOYSA-N 0.000 description 1
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 description 1
- FINSBQYIZDNZKB-UHFFFAOYSA-N [Cu].[Zr].[Cr].[Cu] Chemical compound [Cu].[Zr].[Cr].[Cu] FINSBQYIZDNZKB-UHFFFAOYSA-N 0.000 description 1
- KOMIMHZRQFFCOR-UHFFFAOYSA-N [Ni].[Cu].[Zn] Chemical compound [Ni].[Cu].[Zn] KOMIMHZRQFFCOR-UHFFFAOYSA-N 0.000 description 1
- QZKWFURVKCYMSP-UHFFFAOYSA-N [P].[Fe].[Cu] Chemical compound [P].[Fe].[Cu] QZKWFURVKCYMSP-UHFFFAOYSA-N 0.000 description 1
- ZUPBPXNOBDEWQT-UHFFFAOYSA-N [Si].[Ni].[Cu] Chemical compound [Si].[Ni].[Cu] ZUPBPXNOBDEWQT-UHFFFAOYSA-N 0.000 description 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- SQWDWSANCUIJGW-UHFFFAOYSA-N cobalt silver Chemical compound [Co].[Ag] SQWDWSANCUIJGW-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- IYRDVAUFQZOLSB-UHFFFAOYSA-N copper iron Chemical compound [Fe].[Cu] IYRDVAUFQZOLSB-UHFFFAOYSA-N 0.000 description 1
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000002385 metal-ion deposition Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910001174 tin-lead alloy Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/10—Geometric CAD
- G06F30/17—Mechanical parametric or variational design
-
- G—PHYSICS
- G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
- G16C—COMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
- G16C60/00—Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Computing Systems (AREA)
- General Physics & Mathematics (AREA)
- Evolutionary Computation (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mathematical Analysis (AREA)
- General Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Computational Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Bioinformatics & Computational Biology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The application relates to a connector coating method and a preparation process thereof, wherein the coating method comprises the following steps: setting a covering layer to cover the non-coating part of the contact assembly of the prepared connector, and selecting a target according to coating materials required by coating of the connector; acquiring inner hole structural parameters of a formed deep hole device of a coating part of a connector; planning the mounting position of the deep hole device at the coating part relative to the target according to the inner hole structure parameters; placing the deep hole device into a vacuum chamber, and installing the deep hole device according to the installation position; closing a cavity door of the vacuum cavity, controlling the vacuum cavity to reach proper vacuum pressure and temperature, and introducing proper working gas to perform physical vapor deposition coating on an inner hole connector of the deep hole device. According to the technical scheme, a thinner film is realized on the basis of ensuring the conductivity, and the phenomena of missing plating and pinch-off of deep holes at a plating part are avoided; and alloy coating or multilayer coating can be carried out by adopting an alloy target or a mode of simultaneous coating of multiple targets.
Description
Technical Field
The application relates to the technical field of coating, in particular to a connector coating method and a preparation process thereof.
Background
The connector is an electronic component for transmitting and exchanging current or optical signals among electronic system devices, and the connector is a necessary basic element for forming complete system connection by independently or together with cables for transmitting the current or optical signals among devices, assemblies, devices and subsystems and keeping the systems free from signal distortion and energy loss.
At present, with the high-speed development of technological products, connector products are widely applied in the fields of consumer electronics, automobiles, communication, industry, rail traffic, military industry and the like, and have been developed into one of important electronic components for electronic information manufacturing.
Connectors are classified into high-voltage connectors, low-voltage connectors, high-speed connectors, and the like; the general connector structure is divided into a contact, an insulating base, a housing and an accessory, wherein the contact serving as a signal receiving port is one of core parts of the connector, and a metal film with good conductivity is plated on the surface of a coating part of the connector to ensure electric connection and prevent oxidation. The contact includes a projection such as a usual connector terminal, a recess such as various hole structures, and the like; wherein the deep hole is a slender pipeline structure with the diameter of millimeter with the depth-diameter ratio of 6-10, and is represented by a through hole or a blind hole or a narrow deep groove structure.
At present, metal coating is mainly performed on a connector structure, a film is difficult to be completely coated in a concave small aperture by an electroplating technology, and a coating prepared by the electroplating technology has the defects of low quality, large surface roughness, low hardness, poor uniformity, insufficient binding force with a base material, low wear resistance and corrosion resistance, short service life, even falling of the coating with uneven thickness under cold and hot impact in the use process, insufficient product reliability and the like. When the plating solution is applied to the plating film in the concave small aperture, particularly in a deep hole with high depth-to-width ratio, ions mainly reach the surface of a substrate through diffusion, the concentration of ions at a through hole is high, the ions at the bottom are not timely replenished due to ion transportation limitation after being consumed, so that the metal ion deposition cannot be obtained due to the lack of the ions at the bottom, the aperture film thickness is high easily, the butterfly wing phenomenon of low film thickness in the aperture is easily generated, the aperture is clamped off, namely, the inside of a sealed through hole at the aperture is in a hollow state, in order to relieve the condition of plating omission, the electroplating solution adopts a step electroplating technology to divide the deep hole gap into a plurality of steps with different apertures, so that the aperture depth is shortened, but the defects cannot be fundamentally solved. In the preparation process of the connected device, a Physical Vapor Deposition (PVD) process is locally used for depositing the conductive layer, but the conventional PVD process cannot finish high-aspect-ratio inner hole coating, and a high-performance film system structure is not formed.
Accordingly, it is necessary to provide a plating method for preventing the phenomenon that the transmission signal is distorted or lost easily after the plating of the connector, aiming at the defects of uneven plating thickness and plating omission existing in the plating of the deep hole with high aspect ratio of the connector.
Disclosure of Invention
The present application aims to solve one of the above technical drawbacks, and provides a method for coating a connector and a process for preparing the same.
A connector plating method, comprising:
setting a covering layer to cover the non-coating part of the contact assembly of the prepared connector;
selecting a target according to a coating material required by coating of the connector;
obtaining structural parameters of a coating part of the connector, and planning the mounting position of the coating part of the connector relative to a target according to the structural parameters;
placing the connector into a vacuum chamber and installing the connector according to the installation position;
and closing a cavity door of the vacuum cavity, controlling the vacuum cavity to reach proper vacuum pressure and temperature, introducing proper working gas, and performing physical vapor deposition coating on the connector.
In one embodiment, the connector includes a contact assembly prepared by an injection molding process, the contact including a number of deep hole devices built into an insulating base.
In one embodiment, the obtaining the structural parameter of the coating portion of the connector and planning the installation position of the coating portion of the connector relative to the target according to the structural parameter includes:
acquiring an inner hole structure parameter of the deep hole device formed by the connector; planning the installation position of the deep hole device relative to the target according to the inner hole structure parameters;
the physical vapor deposition coating of the connector comprises the following steps:
and performing physical vapor deposition coating on the coating part of the connector until the inner hole of the deep hole device is covered with a continuous film.
In one embodiment, the selecting a target according to a plating material required for plating a connector includes:
obtaining alloy materials required by deep hole alloy coating;
calculating the material proportion of alloy materials of the alloy coating film;
and selecting corresponding alloy targets or targets of a plurality of metal materials according to the alloy materials and the material proportion thereof.
In one embodiment, the planning the installation position of the deep hole device relative to the target according to the inner hole structure parameter includes:
determining the operation parameters of the sputtering target according to the workpiece structure and the required performance of the deep hole device;
calculating the deposition rate and bias voltage of sputtering particles according to the operation parameters, and establishing a coating mathematical model;
fitting an optimal deposition area according to the coating mathematical model;
and planning the optimal deposition azimuth of the target and the deep hole device according to the optimal deposition area.
In one embodiment, the establishing the film plating mathematical model includes:
performing model parameter planning on the surface of the inner hole coating of the deep hole device, and setting the coating area and the film thickness;
the physical vapor deposition coating of the inner hole of the deep hole device comprises the following steps:
and performing physical vapor deposition coating on the inner hole of the deep hole device according to the model parameters of the coating mathematical model, and observing the growth condition of the film and controlling the thickness of the film through a crystal control system.
In one embodiment, the placing the deep hole device into the vacuum chamber and installing the deep hole device according to the installation position includes:
fixing the deep hole device and mounting the deep hole device on a rotating frame of a vacuum chamber;
and adjusting the relative position of the rotating frame and the target material, so that the target base distance and the sputtering angle of the deep hole device are positioned in the optimal deposition area and the optimal deposition azimuth.
In one embodiment, before the deep hole device is placed in the vacuum chamber, the method further comprises:
before coating, cleaning a coated workpiece by an ultrasonic cleaner, and sending the coated workpiece into a drying box for drying;
before the physical vapor deposition coating is performed on the inner hole of the deep hole device, the method further comprises the following steps:
pumping the vacuum chamber to a first air pressure, and heating under vacuum conditions;
argon is introduced to enable the air pressure of the vacuum chamber to rise to the second air pressure, and plasma is used for cleaning the target.
In one embodiment, the deep hole device is an elongated tubular or trough-shaped copper deep hole based on melt casting;
the plating film material is nickel metal, and the thickness of the plating film is 0.8 mu m;
the plating material is a copper simple substance and chromium-zirconium-copper alloy, wherein the thickness of a copper plating layer is 1 mu m, and the thickness of the chromium-zirconium-copper alloy plating layer is 2 mu m;
or alternatively
The coating material is brass, wherein the thickness of the brass coating is 1.5 mu m.
According to the connector coating method, the coating part of the connector is coated in a physical vapor deposition mode, so that the thickness of a required film can be accurately controlled, the thickness can be customized from nanometer to micrometer, a thinner film is realized on the basis of ensuring the conductivity, and the phenomena of missing coating and pinch-off of deep holes are avoided; and alloy coating or multilayer coating can be carried out by adopting an alloy target or multi-target simultaneous coating mode, particularly, the coating efficiency is higher for coating parts such as deep holes, narrow deep grooves and other structures on the connector, and the coating quality is improved.
A connector manufacturing process comprising:
processing the deep hole device through a casting molding process;
injection molding an integrally formed matrix structure on the surfaces of the arranged deep hole devices;
polishing and cutting the deep hole device to obtain an injection molded contact assembly;
a covering layer is arranged to cover the non-coating part of the contact assembly;
and coating the coating part of the contact assembly based on the connector coating method until the inner hole of the deep hole device of the contact assembly is covered with a continuous film layer, and manufacturing the connector by using the coated contact assembly.
In one embodiment, the processing of deep hole devices by a melt cast molding process includes:
manufacturing a long and thin tubular or groove-shaped deep hole device through casting forming and machining cutting, and carrying out deburring, cutting, polishing and cleaning treatment on the deep hole device;
the matrix structure of injection molding integrated into one piece on the surfaces of a plurality of deep hole devices arranged comprises:
arranging and placing a plurality of deep hole devices into an injection mold and fixing;
and (3) coating the molten high polymer on the surface of the copper piece through injection molding, and integrally forming to manufacture the base structure with the outline of the target workpiece.
According to the connector preparation process, the physical vapor deposition mode is adopted, and the connector can be coated after being processed when being manufactured, so that the complexity of processing a deep hole device after coating is avoided, and the performance of the connector is ensured.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic illustration of an exemplary pinch-off phenomenon of a narrow deep trench structure;
FIG. 2 is a flow chart of a connector plating method of one embodiment;
FIG. 3 is a schematic view of an exemplary film layer and its deposition angle;
FIG. 4 is a schematic view of another exemplary film layer and its deposition angle;
fig. 5 is a flow chart of a connector preparation process of one embodiment.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary only for the purpose of illustrating the present application and are not to be construed as limiting the present application.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, but do not preclude the presence or addition of one or more other features, integers, steps, operations.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In the male-female connector, the connectors are repeatedly plugged and unplugged, so that plating is required on the contact surface of the pin and the through hole to improve the connection strength, the service life, the binding force and the like. However, when the electroplating technology is used for coating the through hole with high depth-to-width ratio, the hole is easily deposited at the hole opening to cause the sealing of the hole opening, the phenomenon of 'butterfly wing' in which the inside of the through hole is in a hollow state appears, referring to fig. 1, fig. 1 is a schematic diagram of an exemplary pinch-off phenomenon of a narrow deep groove structure, as shown in the drawing, the thicker the coating at the hole opening is, and the further the coating is toward the inside of the deep hole, the smaller the coating thickness is, and even the phenomenon of missing plating and pinch-off appears, as shown in a broken line frame, so that the phenomenon of 'butterfly wing' appears.
In order to solve the above-mentioned defect, the present application provides a connector coating method for a connector, the solution adopts vacuum coating technology, combines the inner hole structure characteristics of coating positions such as deep holes and narrow grooves of the connector to perform film deposition, and relatively uniformly grows films in the deep holes of the coating positions such as the deep holes and the narrow grooves, thereby solving the problem that the coating solution cannot penetrate deep into the deep holes and the narrow groove holes of the connector to cause the phenomenon of missing coating, forming a metal film layer with high quality, strong binding force, being resistant to cold and hot impact, being not easy to fall off and deform, and reducing the phenomenon that transmission signals are easy to be distorted or lost after the connector is coated.
Referring to fig. 2, fig. 2 is a flowchart of a connector coating method according to one embodiment, including the steps of:
s11, a covering layer is arranged to cover the non-coating part of the contact assembly of the prepared connector.
In general, for a connector having a conductive portion and a non-conductive portion, it is required to plate a metal film on the conductive portion, mainly on a contact assembly, while the non-conductive portion is used as the non-plated portion to avoid plating a metal film, such as an insulating base, and to avoid plating the metal film on the non-plated portion, a shielding layer is usually provided on the non-plated portion of the contact assembly of the connector to shield the non-plated portion before plating.
For connector contact assemblies, they may be prepared by an injection molding process, which may include a plurality of deep hole devices built into an insulating base.
S12, selecting a target according to coating materials required by coating of the connector.
In this step, the coating material required for coating the connector is determined according to the product requirement of the connector, and generally, a semiconductor such as silicon, a high molecular polymer such as plastic PC, LCP, PPS, PBT, a metal simple substance, an alloy, an oxide, or the like can be selected as the base material.
The metal material metal can be selected from the following materials: copper Cu, silver Ag, gold Au, cobalt Co, rhodium Rh, ruthenium Ru, aluminum Al, tin Sn, nickel Ni, palladium Pd, tungsten W, iron Fe, magnesium Mg, silicon Si, zinc Zn, zirconium Zr, chromium Cr, arsenic As, titanium Ti, cadmium Cd and the like.
The alloy material may include: copper nickel silicon alloy, copper chromium zirconium alloy, copper nickel zinc alloy, copper iron alloy, copper tin lead alloy, copper zinc tin alloy, copper nickel tin alloy, copper silicon, copper iron phosphorus, tin copper, silver cobalt alloy, silver copper alloy, nickel palladium alloy, nickel tungsten alloy and the like; the target is then selected according to the coating material used.
As described above, when selecting a metal material, if a plurality of metal film layers are to be plated, a corresponding metal material target can be selected; in addition, the technical scheme can select alloy materials when coating films.
Accordingly, as an example, when a target is selected according to a plating material required for plating a connector, an alloy material required for deep hole alloy plating can be obtained; calculating the material proportion of alloy materials of the alloy coating film; and selecting corresponding alloy targets or targets of a plurality of metal materials according to the alloy materials and the material proportion thereof.
If the alloy target is adopted, calculating the material proportion according to the coating parameter requirement, and then manufacturing a corresponding alloy target; if the target is made of a plurality of metal materials, determining actual operation parameters of each target during sputtering according to the material proportion, thereby controlling the alloy proportion to meet the design index requirement.
S13, obtaining structural parameters of the coating part of the connector, and planning the mounting position of the coating part of the connector relative to the target according to the structural parameters.
Firstly, obtaining structural parameters of a coating part of the connector, such as a deep hole, a narrow groove and the like, which need coating, and then planning the mounting position of the coating part of the connector relative to a target according to the obtained structural parameters; since different installation locations affect the coating effect, a planned arrangement is generally required here according to the specific coating location.
In one embodiment, the inner hole structure parameters of the deep hole device can be obtained according to the formed deep hole device, and then the installation position of the deep hole device relative to the target material is planned according to the inner hole structure parameters. For example, the depth of the hole, the diameter of the hole, the depth-diameter ratio and other hole structure parameters, especially for the thin and narrow holes with the depth-diameter ratio exceeding 10, the hole structure parameters can provide references for film deposition and target related planning design, so that the film coating process can be controlled, and the film coating can be deep in the hole to form a uniform film.
Specifically, under the set product index parameters and requirements, the sputtering angle of the target material, related operation parameters and the like are determined, the installation position of the deep hole device relative to the target material is planned according to the inner hole structure parameters of the deep hole device, and the proper position of the deep hole device in the vacuum chamber is determined.
As an embodiment, the step of planning the installation position of the deep hole device relative to the target according to the inner hole structure parameter may include the following steps:
s131, determining the operation parameters of the sputtering target material according to the workpiece structure and the required performance of the deep hole device.
Specifically, determining actual operation parameters of a sputtering target according to different workpiece structures of the deep hole device; for example, in a magnetron mode, the surface magnetic field may be 300-500Gs, the voltage may be 200-500V, and the single target current may be 25-45A; in the arc mode, the surface weak magnetic field can be 40-90Gs, the voltage can be 15-30V, and the single target current can be 100-150A.
S132, calculating the deposition rate and bias voltage of the sputtering particles according to the operation parameters, and establishing a coating mathematical model.
Specifically, model parameter planning can be performed on the surface of the inner hole coating of the deep hole device, and the coating area and the film thickness are set; thereby establishing a coating mathematical model as a coating control reference.
S133, fitting the optimal deposition area according to the coating mathematical model.
Specifically, data fitting is carried out through a film plating mathematical model to obtain the optimal deposition area of the deep hole device in the vacuum chamber.
S134, planning the optimal deposition azimuth of the target and the deep hole device according to the optimal deposition area.
Specifically, the optimal deposition azimuth of the target and the deep hole device is planned according to the optimal deposition area, so that the inner hole can be fully coated during coating, and the performances of coating area, film thickness and the like meet the requirements of set indexes.
Based on the technical scheme of the embodiment, when the installation position of the deep hole device is planned, the relation between the deep hole device and the target material can be determined according to the target coating thickness and the aperture and depth parameters of the deep hole. The thickness of the coating film in the hole is 100-150nm, the parameters of the deep hole with the thickness-diameter ratio smaller than 6 are selected, at the moment, the roughness of the coating film in the hole is lower than the roughness of the substrate, and the performance of the coating film in the deep hole is better. When the thickness of the coating film on the surface of the workpiece with the deep hole is more than 150nm, deep hole parameters with the thickness-diameter ratio more than 6 can be selected, the change of the surface roughness of the workpiece is small, and the method can be applied to the coating film on the surface of the workpiece with the high requirement on the thickness-diameter ratio.
Calculating the relation between the hole depth and the aperture ratio k=l/D, and designing the target base distance according to the K value as follows:
(1) If K is less than 3, the film can be directly deposited by adopting a PVD physical vapor deposition method, the target base distance is continuously selected from 80-150mm, preferably 150mm, as shown in FIG. 3, FIG. 3 is a schematic diagram of an exemplary film layer and the deposition angle thereof, the deposition angle can be continuously selected from 20-40 degrees, preferably 35 degrees, and the roughness of the deep hole inner film layer prepared at the deposition angle is lower than that of the substrate, so that a coating (100-150 nm) with better deep hole performance can be obtained.
(2) If K is more than 3 and less than 6, analyzing the structure of the workpiece and the deposition azimuth of particles by adopting a mathematical model, and adjusting the base distance of the target material to be 90-140mm continuously, preferably 140mm, wherein the deposition angle is 20-40 degrees continuously, preferably 35 degrees.
(3) If K is more than 6 and less than 10, analyzing the structure and particle deposition orientation of the workpiece by adopting a mathematical model, designing the optimal deposition orientation, wherein the target base distance is 110-140mm, and is continuously selectable, preferably 120mm, as shown in FIG. 4, FIG. 4 is another exemplary film layer and a schematic view of the deposition angle thereof, and the deposition angle, namely the target angle, can be limited to 10-25 degrees, is continuously selectable, preferably 20 degrees, and the influence of a film coating on the outer surface under the deposition angle is small, so that the film coating with high requirements on the thickness-to-diameter ratio can be applied.
S14, placing the connector into a vacuum chamber, and installing the connector according to the installation position.
In the step, all connectors to be coated are placed on a rotating frame of a vacuum chamber, the position of the rotating frame is controlled to adjust the position of a deep hole device relative to a target, and the mounting positions of the connectors are planned in advance under the condition of coating positions such as deep holes, narrow grooves and the like, so that the connectors are mounted according to the mounting positions, and the film can be grown uniformly in the coating positions.
Specifically, the deep hole device can be fixed and installed on a rotating frame of the vacuum chamber; and adjusting the relative positions of the rotating frame and the target material, so that the target base distance and the sputtering angle are positioned in the optimal deposition area and the optimal deposition azimuth.
In one embodiment, in order to improve the coating effect, the coated workpiece can be cleaned by an ultrasonic cleaner for 10-20min before coating, and then sent into a drying box at 40-60 ℃ for drying, and then put into a vacuum chamber for coating.
And S15, closing a cavity door of the vacuum cavity, controlling the vacuum cavity to reach proper vacuum pressure and temperature, introducing a proper amount of working gas, and performing physical vapor deposition coating on the connector.
In the step, physical vapor deposition coating is carried out on the coating part of the connector until the inner hole of the deep hole device is covered with a continuous film layer, for example, physical vapor deposition coating can be carried out on the inner hole of the deep hole device according to model parameters of the coating mathematical model, the growth condition of a film is observed through a crystal control system, the thickness of the film layer is controlled, and a uniform film is formed in the inner hole of the deep hole device.
As an example, prior to coating, heating may be performed under low vacuum conditions, and then the air pressure is pumped to high vacuum; for example, the vacuum chamber is pumped to a first air pressure of 6X10 -3 Pa, heating to 80 ℃ under the vacuum condition; then argon is introduced to enable the air pressure to rise to 1-10Pa of the second air pressure, plasma is used for cleaning the target for 12-20min, and model parameters of a film plating mathematical model are utilized for film plating after the target is cleaned; and after the film coating is finished, the air pressure of the vacuum chamber is restored to the atmospheric pressure, and the film-coated deep hole device is taken out.
According to the technical scheme, the connector is coated in a physical vapor deposition mode, the thickness of the required film can be accurately controlled, the thickness can be customized from nanometer to micrometer, a thinner film is realized on the basis of ensuring the conductivity, and the butterfly wing phenomenon is avoided. And the alloy coating can be realized by physical vapor deposition, and the alloy coating is carried out by adopting an alloy target or multi-target simultaneous coating mode, so that the alloy coating is not influenced by the potential of various metal electrodes. In addition, because the physical vapor deposition mode is adopted to carry out coating on the connector, when preparing the contact piece, the contact assembly of the connector, such as a terminal, a deep hole and the like, which are prepared by an injection molding process can be firstly provided with a plurality of deep hole devices on an insulating base in advance, then the non-coating part of the contact assembly is shielded, and then the contact assembly is put into a vacuum chamber to carry out physical vapor deposition coating on the coating part, so that the coating efficiency is higher when the coating is carried out on the structures of the deep hole, the narrow deep groove and the like of the connector, and the coating quality is improved, thereby improving the coating effect.
An example of a connector preparation process is set forth below.
Based on the connector coating method, when the connector with the deep hole is prepared, a more optimized preparation process can be adopted, so that the preparation efficiency can be improved and the processing complexity can be reduced.
Referring to fig. 5, fig. 5 is a process flow diagram of one embodiment of a connector preparation process, comprising:
s31, machining the deep hole device of the connector through a fusion casting molding process.
As an example, copper can be formed into a desired elongated tubular shape or a groove shape by melt casting, machining and cutting, and the thickness is the same as that of the film coating, and the copper piece is deburred, cut, polished and cleaned.
S32, injection molding an integrally formed matrix structure on the surfaces of the arranged deep hole devices.
As an example, a plurality of deep hole devices can be arranged in a row and placed in an injection mold for fixation; and then, the high polymer in a molten state is subjected to injection molding, so that the high polymer is wrapped on the surface of a copper piece, and the base structure with the connector outline is manufactured through integral molding.
And S33, polishing and cutting the deep hole device to obtain the injection molded contact assembly.
S34, a covering layer is arranged to cover the non-coating part of the contact assembly.
S35, coating the coating part of the contact assembly based on the connector coating method in any embodiment until the inner hole of the deep hole device of the contact assembly is covered with a continuous film, and manufacturing the connector by using the coated contact assembly.
According to the technical scheme, firstly, a deep hole device is processed through a fusion casting molding process, an injection molding integrated matrix structure is prepared, then, a contact assembly of an injection molding connector is obtained through polishing and cutting, a non-coating part which is shielded is obtained, and finally, a physical vapor deposition mode is adopted to coat the inner hole of the deep hole device of the contact assembly, and the connector is manufactured; in the technical scheme, the physical vapor deposition mode is adopted, so that the connector can be coated after being processed when being manufactured, the complex processing process of a deep hole device after coating is simplified, and the influence on the performance of the connector due to the damage of the film in the later processing process is avoided.
In order to further clarify the technical solutions of the present application, more embodiments of the connector coating method and the connector preparation process are described below.
In one embodiment, in order to ensure excellent conductivity, the technical scheme of the application can adopt a copper simple substance to perform electric signal connection aiming at the deep hole, and the nickel plating film has a prolonged service life, and concretely, the scheme can comprise the following steps:
s101, preparing a slender tubular or groove-shaped copper deep hole through casting molding and machining cutting, wherein the thickness of the slender tubular or groove-shaped copper deep hole is the same as that of a coating film.
And S102, removing burrs, cutting, polishing and cleaning the copper deep hole, and then placing the copper deep hole into an injection mold and fixing the copper deep hole.
And S103, coating the molten high molecular polymer on the surface of the copper deep hole by injection molding, and integrally forming to prepare the matrix structure with the outline of the target workpiece.
And S104, polishing and cutting the injection molded copper piece, and entering a coating process, namely depositing a nickel film on the surface of the inner hole of the injection molded copper deep hole by adopting a physical vapor deposition mode.
S105, planning the installation position of the deep hole device relative to the target according to the inner hole structure parameter of the deep hole device, and fitting a coating mathematical model; performing film deposition by adopting a magnetron sputtering mode; preferably, the magnetron sputtering voltage may be 300V and the target current 40A.
And S106, after the deep hole device is clamped firmly, the deep hole device is placed in a rotating frame of the vacuum chamber, the relative position of the rotating frame and the target is adjusted, the target base distance and the sputtering angle are ensured to be the optimal interval, and the chamber door is closed.
s107, vacuum pumping the vacuum chamber to the first air pressure of 6×10 -2 About Pa, cleaning the surface of the deep hole device by adopting plasma, and cleaning the surface of the deep hole device by adopting argon gas for about 10 min.
s108, pumping the vacuum pressure in the vacuum chamber to 6X 10 -3 About Pa, heating to 80 ℃ under the vacuum condition; and then argon is introduced to ensure that the air pressure is increased to the second air pressure of 1-10Pa, and the target is cleaned by using plasma for 12-20min.
S108, performing film deposition on the deep hole device according to model parameters fitted by the film plating mathematical model, and ensuring that the film plating area, film thickness and other performances of the deep hole device reach set index parameters; the growth of the nickel film is observed by a crystal control system, wherein the thickness of the plating layer can be 0.5-1.5 mu m, and the thickness of the plating layer is preferably 0.8 mu m.
And S109, ending coating, recovering the air pressure inside and outside the vacuum chamber, and taking out the connector contact assembly product.
According to the technical scheme, in the deep hole of the copper connector, the nickel plating film is used for prolonging the service life on the basis of the copper simple substance, so that simple substance copper is prevented from being oxidized easily, the connector is high in film quality, strong in binding force, resistant to cold and hot impact, not prone to falling off and deformation, not prone to falling off due to repeated use between the male connector and the female connector, corrosion resistant, high in strength, long in service life, low in surface roughness, good in uniformity, not prone to distortion due to connection signal transmission and the like.
In order to improve the performance of the high-voltage connector, the technical scheme can deposit a composite film on the surface of the contact component of the connector; according to the design of the double-layer film structure, a composite film of a copper simple substance and a chromium-zirconium-copper alloy is selected as an embodiment, and the film plating method of the connector contact assembly can be as follows:
s201, integrating the metal terminals into a required shape through machining, and placing the metal terminals into a model to integrally mold the high-voltage connector contact assembly.
And S202, polishing and cutting the terminal of the processed connector contact assembly, cleaning for 20min by adopting ultrasonic waves, and drying in a 60 ℃ oven.
S203, performing film deposition by adopting a physical vapor deposition mode, and designing a film system for respectively depositing a copper Cu film and a chromium-zirconium-copper alloy Cu-Cr-Zr film on the surface of the contact component of the high-voltage connector.
Specifically, when the film system is designed, the thickness and parameters of the alloy film are designed according to the electrical indexes such as insertion loss, characteristic impedance, voltage standing wave ratio and the like, so that the requirements of low signal loss, low standing wave ratio, less microwave leakage and the like can be met.
And S204, arranging a covering layer to cover the non-coating part of the high-voltage connector contact assembly.
s205, depositing a copper Cu film on the surface of the connector contact assembly by magnetron sputtering, preferably, determining the magnetron sputtering voltage to be 400V and the target current to be 40A.
And S206, placing the high-voltage connector contact assembly into a rotating frame of the vacuum chamber after being clamped firmly, and closing a cavity door of the vacuum chamber.
s207, pumping the vacuum chamber to the first air pressure of 6×10 -3 About Pa, and heated to 80℃under this vacuum.
And S208, introducing argon, increasing the air pressure to the second air pressure of 1-10Pa, and cleaning the target material by using plasma for about 12-20min.
s209, starting film plating, wherein the thickness of the copper Cu plating layer can be 1 μm; in the film coating process, the crystal control system monitors the film growth, and the film coating is stopped when the film layer reaches the set thickness.
When the copper Cu film is coated, the thickness is generally controlled to be about 1 mu m, so that the contact assembly after coating can be ensured to have good conductivity, and the thickness of the film is not excessively large.
s210, depositing chromium-zirconium-copper Cu-Cr-Zr alloy on the surface of the high-voltage connector contact assembly by magnetron sputtering, preferably determining that the magnetron sputtering voltage is 500V and the target current is 45A.
s211, when the chromium plating zirconium copper alloy Cu-Cr-Zr film is used, the preferable thickness of the chromium plating zirconium copper Cu-Cr-Zr alloy coating can be 2 mu m; and in the same way, monitoring the film growth through a crystal control system in the film coating process, and stopping coating when the film reaches the set thickness.
When the chromium-zirconium-copper Cu-Cr-Zr alloy is coated, the thickness is generally controlled to be about 2 mu m, so that the coated contact assembly can be ensured to have excellent protective performance, tensile performance and wear resistance, and the total film thickness is within a certain range.
And S212, ending the coating process, recovering the air pressure inside and outside the vacuum chamber, and taking out the coated connector contact assembly.
According to the technical scheme, a double-layer film structure is designed, and a composite film of a copper simple substance and a chromium-zirconium-copper alloy is selected, so that the mechanical strength of the connector is ensured, and meanwhile, the connector is endowed with more excellent heat resistance, high-voltage and high-current resistance, protection performance, anti-interference performance, mechanical strength and wear resistance; particularly, the copper-chromium-zirconium-copper Cu-Cr-Zr alloy film layer is plated on the high-voltage connector terminal, so that the surface roughness of the connector contact assembly can be reduced, the high-voltage connector contact assembly has high conductivity, strong anti-interference performance and high stability under high-voltage and large current, and the high-voltage connector contact assembly has better development in the field of finer tips.
In order to improve the performance of the low-voltage connector, the technical scheme can deposit a brass film on the surface of the contact component of the connector made of phosphor bronze; thereby ensuring the conductivity of the connector and simultaneously endowing the connector with more excellent protective performance, tensile performance, wear resistance and the like; as an example, the connector contact assembly plating method may be as follows:
s301, integrating the metal terminals into a required shape through machining, and placing the metal terminals into a model to integrally mold the low-voltage connector contact assembly.
And S302, polishing and cutting the processed terminal of the low-voltage connector contact assembly, cleaning for 20min by adopting ultrasonic waves, and drying in a 60 ℃ oven.
And S303, performing film deposition by adopting a physical vapor deposition mode, and designing to deposit a brass film on the surface of the contact assembly of the low-voltage connector.
And S304, arranging a covering layer to cover the non-coating part of the low-voltage connector contact assembly.
s305, depositing a brass thin film on the surface of the workpiece by magnetron sputtering, preferably, determining that the magnetron sputtering voltage is 450V and the target current is 40A.
And S306, placing the low-voltage connector contact assembly into a rotating frame of the vacuum chamber after being clamped firmly, and closing a cavity door of the vacuum chamber.
s307, pumping the vacuum pressure in the vacuum chamber to the first air pressure of 6 multiplied by 10 -3 Pa, and heating to 80℃under the vacuum condition.
And s308, introducing argon, raising the air pressure to the second air pressure of 1-10Pa, and cleaning the target material by using plasma for about 12-20min.
s309, starting coating, wherein the thickness of the brass coating can be 1-3 μm, and preferably, the thickness of the film is 1.5 μm; meanwhile, in the film plating process, the crystal control system monitors the film growth, and the film plating is stopped when the film reaches the set thickness.
Because the thin film with smaller thickness can be deposited on the surface of the contact component by a physical vapor deposition mode, the thickness of the thin film can be guided according to the relevant performance index of the connector when the brass plating layer is designed, so that the brass plating layer has good conductivity and protection performance.
And s310, ending the coating process, recovering the air pressure inside and outside the vacuum chamber, and taking out the coated low-voltage connector contact assembly.
According to the technical scheme, the brass film is deposited on the surface of the low-voltage connector contact assembly made of phosphor bronze, so that the original good conductivity of the low-voltage connector contact assembly can be maintained, and meanwhile, the low-voltage connector contact assembly is endowed with more excellent protective performance, tensile performance, wear resistance and the like.
In order to improve the performance of the high-speed connector, the technical scheme of the application designs a nickel and silver combined film layer on the surface of the terminal of the high-speed connector, so that the electrical performance of the connector is improved; as an example, the connector contact assembly plating method may be as follows:
s401, integrating the metal terminal into a required shape through machining, placing the metal terminal into a model, and injecting LCP (liquid crystal display) to form a workpiece.
And S402, polishing and cutting the processed terminal, cleaning for 20min by adopting ultrasonic waves, and drying in a 60 ℃ oven.
S403, performing film deposition by adopting a physical vapor deposition mode, and designing to deposit a nickel and silver combined film on the surface of the high-speed connector.
S404, a covering layer is arranged to cover the non-coating part of the high-speed connector.
s405, depositing nickel on the surface of the workpiece by magnetron sputtering, and determining that the magnetron sputtering voltage is 350V and the target current is 40A.
And S406, placing the high-speed connector contact assembly into a rotating frame of the vacuum chamber after being clamped stably, adjusting the relative position of the rotating frame and the target, ensuring the target base distance and the sputtering angle to be the optimal intervals, and closing a cavity door of the vacuum chamber.
s407, adopting a low-pressure plasma device to carry out surface plasma treatment, wherein the pressure is 0.6-0.8mbar and the flow is 20cm 3 /min。
s408, vacuum air pressure in the cavity is pumped to 1-10Pa, and the temperature in the cavity is heated to 50 ℃.
s409, continuously pumping high vacuum, and pumping the vacuum pressure in the cavity to 6 multiplied by 10 < -3 > Pa.
And s410, carrying out actual production by using the parameters, and observing the growth condition of the film through a crystal control system, wherein the thickness of the nickel coating is 10nm.
s411, depositing a silver film on the surface of the workpiece by magnetron sputtering, and determining that the magnetron sputtering voltage is 500V and the target current is 45A.
s412, carrying out actual production by using the parameters, wherein the thickness of the silver coating is 60nm.
And s413, monitoring the film growth through the crystal control system, and stopping coating if the set thickness is reached.
And s414, finishing coating, recovering the air pressure inside and outside the cavity, and taking out the high-speed connector product.
According to the technical scheme of the embodiment, aiming at the high-frequency high-speed high-voltage application scene, particularly the use of the high-speed connector made of LCP materials with high mechanical property, electrical property, temperature resistance and flame retardant property, the corrosion of external factors to a substrate can be reduced by plating a nickel and silver combined film layer on the surface of the high-speed connector, the durability of a surface contact coating is improved, a hard supporting layer is provided, and the migration of metal of the substrate to the contact surface is prevented; in high-current application, the low-electrical impedance and high-efficiency heat conduction performance have better use effect in a high-current connection scene; the coverage rate of the combined nickel-silver combined film is high, so that the insertion loss, characteristic impedance, voltage standing wave ratio and other electrical indexes of the combined nickel-silver combined film are ensured, and the requirements of low signal loss, low standing wave ratio, less microwave leakage and the like are met.
In summary, according to the technical scheme of each embodiment, the plating is performed in the deep and narrow hole with a large depth-to-diameter ratio of the connector by adopting a physical vapor deposition mode, so that the phenomena of plating leakage and pinch-off can be avoided; the film deposited and grown by the film has high quality, strong binding force, resistance to cold and hot impact, difficult falling and deformation, repeated use among male and female connectors, no falling, corrosion resistance, high strength and long service life. The film has low surface roughness and excellent uniformity, and the connection signal transmission is not easy to distort; alloy coating can be performed by adopting an alloy target or a mode of simultaneous coating of multiple targets, and the alloy coating is not influenced by the potential of various metal electrodes. Through multi-element alloy coating and combining different film system designs, the high-voltage protection type connector can meet the high requirements of heat management, high-voltage protection, protection level, interference resistance and the like, and can prevent oxidation and corrosion of the connector; the prepared connector has the advantages of high strength, high conductivity, stress relaxation resistance and the like. The thin film deposition is carried out in a vacuum sputtering mode, so that the loss of the target material is less, the material utilization rate is high, the production cost is low, the environmental pollution is reduced, and the production cost is reduced.
The foregoing is only a partial embodiment of the present application, and it should be noted that, for a person skilled in the art, several improvements and modifications can be made without departing from the principle of the present application, and these improvements and modifications should also be considered as the protection scope of the present application.
Claims (10)
1. A method of coating a connector, comprising:
setting a covering layer to cover the non-coating part of the contact assembly of the prepared connector;
selecting a target according to a coating material required by coating of the connector;
obtaining structural parameters of a coating part of the connector, and planning the mounting position of the coating part of the connector relative to a target according to the structural parameters;
placing the connector into a vacuum chamber and installing the connector according to the installation position;
and closing a cavity door of the vacuum cavity, controlling the vacuum cavity to reach proper vacuum pressure and temperature, introducing proper working gas, and performing physical vapor deposition coating on the connector.
2. The connector plating method according to claim 1, wherein the connector includes a plurality of deep hole devices;
the step of obtaining the structural parameters of the coating part of the connector and planning the mounting position of the coating part of the connector relative to the target according to the structural parameters comprises the following steps:
acquiring an inner hole structure parameter of the deep hole device formed by the connector; planning the installation position of the deep hole device relative to the target according to the inner hole structure parameters;
the physical vapor deposition coating of the connector comprises the following steps:
and performing physical vapor deposition coating on the coating part of the connector until the inner hole of the deep hole device is covered with a continuous film.
3. The connector plating method according to claim 2, wherein the selecting a target material according to a plating material required for the connector plating includes:
obtaining alloy materials required by deep hole alloy coating;
calculating the material proportion of alloy materials of the alloy coating film;
and selecting corresponding alloy targets or targets of a plurality of metal materials according to the alloy materials and the material proportion thereof.
4. The connector plating method according to claim 2, wherein the planning of the installation position of the deep hole device relative to the target according to the internal hole structure parameter comprises:
determining the operation parameters of the sputtering target according to the workpiece structure and the required performance of the deep hole device;
calculating the deposition rate and bias voltage of sputtering particles according to the operation parameters, and establishing a coating mathematical model;
fitting an optimal deposition area according to the coating mathematical model;
and planning the optimal deposition azimuth of the target and the deep hole device according to the optimal deposition area.
5. The method of coating a connector according to claim 4, wherein the establishing a coating mathematical model comprises:
performing model parameter planning on the surface of the inner hole coating of the deep hole device, and setting the coating area and the film thickness;
the physical vapor deposition coating of the inner hole of the deep hole device comprises the following steps:
and performing physical vapor deposition coating on the inner hole of the deep hole device according to the model parameters of the coating mathematical model, and observing the growth condition of the film and controlling the thickness of the film through a crystal control system.
6. The method of plating a connector according to claim 4, wherein said mounting a deep hole device according to the mounting position comprises:
fixing the deep hole device on a rotating frame of a vacuum chamber;
and adjusting the relative position of the rotating frame and the target material, so that the target base distance and the sputtering angle of the deep hole device are positioned in the optimal deposition area and the optimal deposition azimuth.
7. The method of plating a connector according to claim 1, wherein before the deep hole device is placed in the vacuum chamber, further comprising:
before coating, cleaning a coated workpiece by an ultrasonic cleaner, and sending the coated workpiece into a drying box for drying;
before the physical vapor deposition coating is performed on the inner hole of the deep hole device, the method further comprises the following steps:
pumping the vacuum chamber to a first air pressure, and heating under vacuum conditions;
argon is introduced to enable the air pressure of the vacuum chamber to rise to the second air pressure, and plasma is used for cleaning the target.
8. The connector plating method according to claim 1, wherein the deep hole device is an elongated tubular or groove-shaped copper deep hole based on casting molding;
the plating film material is nickel metal, and the thickness of the plating film is 0.8 mu m;
the plating material is a copper simple substance and chromium-zirconium-copper alloy, wherein the thickness of a copper plating layer is 1 mu m, and the thickness of the chromium-zirconium-copper alloy plating layer is 2 mu m;
or alternatively
The coating material is brass, wherein the thickness of the brass coating is 1.5 mu m. .
9. A process for preparing a connector, comprising:
processing a deep hole device of the connector through a casting molding process;
injection molding an integrally formed matrix structure on the surfaces of the arranged deep hole devices;
polishing and cutting the deep hole device to obtain an injection molded contact assembly;
a covering layer is arranged to cover the non-coating part of the contact assembly;
coating a coating part of the contact assembly based on the connector coating method of any one of claims 1-8 until the deep hole device inner hole of the contact assembly is covered with a continuous film layer, and manufacturing the connector by using the coated contact assembly.
10. The connector preparation process of claim 9, wherein the processing of the deep hole device by the melt casting process comprises:
manufacturing a long and thin tubular or groove-shaped deep hole device through casting forming and machining cutting, and carrying out deburring, cutting, polishing and cleaning treatment on the deep hole device;
the matrix structure of injection molding integrated into one piece on the surfaces of a plurality of deep hole devices arranged comprises:
arranging and placing a plurality of deep hole devices into an injection mold and fixing;
and (3) coating the molten high polymer on the surface of the copper piece through injection molding, and integrally forming to manufacture the base structure with the outline of the target workpiece.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311010895.2A CN117418208A (en) | 2023-08-10 | 2023-08-10 | Connector coating method and preparation process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311010895.2A CN117418208A (en) | 2023-08-10 | 2023-08-10 | Connector coating method and preparation process thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6241857B1 (en) * | 1996-11-20 | 2001-06-05 | Nec Corporation | Method of depositing film and sputtering apparatus |
| JP2004266112A (en) * | 2003-03-03 | 2004-09-24 | Ulvac Japan Ltd | Method of dc pulse sputter deposition and film forming device therefor |
| JP2005285820A (en) * | 2004-03-26 | 2005-10-13 | Ulvac Japan Ltd | Bias spatter film deposition process and film thickness control method |
| CN2927389Y (en) * | 2006-07-13 | 2007-07-25 | 番禺得意精密电子工业有限公司 | Electric connector |
| US20080127490A1 (en) * | 2006-12-01 | 2008-06-05 | Lotes Co., Ltd. | Manufacture process of connector |
| CN215000767U (en) * | 2021-07-30 | 2021-12-03 | 丹东富田精工机械有限公司 | Coating equipment for processing optical fiber connector accessories |
-
2023
- 2023-08-10 CN CN202311010895.2A patent/CN117418208A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6241857B1 (en) * | 1996-11-20 | 2001-06-05 | Nec Corporation | Method of depositing film and sputtering apparatus |
| JP2004266112A (en) * | 2003-03-03 | 2004-09-24 | Ulvac Japan Ltd | Method of dc pulse sputter deposition and film forming device therefor |
| JP2005285820A (en) * | 2004-03-26 | 2005-10-13 | Ulvac Japan Ltd | Bias spatter film deposition process and film thickness control method |
| CN2927389Y (en) * | 2006-07-13 | 2007-07-25 | 番禺得意精密电子工业有限公司 | Electric connector |
| US20080127490A1 (en) * | 2006-12-01 | 2008-06-05 | Lotes Co., Ltd. | Manufacture process of connector |
| CN215000767U (en) * | 2021-07-30 | 2021-12-03 | 丹东富田精工机械有限公司 | Coating equipment for processing optical fiber connector accessories |
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