CN117412610A - Perovskite battery module, preparation method thereof and electric equipment - Google Patents
Perovskite battery module, preparation method thereof and electric equipment Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a perovskite battery module, a preparation method thereof and electric equipment. Forming an insulating shielding layer by direct deposition (such as low-temperature PECVD deposition) by using a Mask after the P2 process, wherein the insulating shielding layer covers the bottom transparent conductive electrode exposed by the P2 process; the P2-1 laser scribing process is synchronously added, and the insulating shielding layer covered on the bottom conductive electrode is removed, so that the bottom conductive electrode is exposed again, good contact can be formed after the back electrode is deposited, and further the fact that the back electrode layer is not contacted with perovskite in the cross section of a sandwich structure is realized, and the stability of the perovskite solar cell can be improved.
Description
Technical Field
The invention relates to the technical field of photoelectricity, in particular to a perovskite battery module, a preparation method thereof and electric equipment.
Background
Perovskite solar energyThe battery is a novel photovoltaic technology with low cost and high theoretical efficiency (-31%). Perovskite solar cells generally comprise: the front electrode is transparent conductive glass or flexible transparent conductive film; the first carrier transmission layer is made of a P-type or N-type semiconductor material; perovskite light absorbing layer ABX 3 The material A is monovalent groups or ions such as methylamino MA, formamidino FA, cesium Cs and the like; b is bivalent element such as Pb, sn or two monovalent element ions; x is a halogen element or other negative monovalent group; the second carrier transmission layer is made of N-type or P-type semiconductor material and is made of metal oxide or organic semiconductor material; the back electrode may be a metallic material, graphite or a conductive oxide. Since 2009, the photoelectric conversion efficiency of the small-area battery in the laboratory is over 26.1% at present, which is comparable to that of the silicon-based battery. Especially in the next half of 2021, the industrialization process of perovskite solar cells is accelerated, and early industrialization attempts such as laboratory technology amplification, pilot production line construction, sample display and the like are well-developed.
Currently, for perovskite solar cell modules used in industrialization, subcells are often connected in series by laser scribing, and the laser scribing step usually includes three steps (named P1, P2, and P3), where P1 is to pattern transparent conductive glass and divide the transparent conductive glass into a plurality of subcells; p2 is to pattern the prepared first carrier transmission layer/perovskite layer/second carrier transmission layer sandwich structure together to expose a small part of bottom transparent electrode; p3 is to pattern the electrode after the electrode is prepared; finally, a perovskite solar module with a plurality of separated sub-cells connected in series is formed.
In the prior art, in the preparation process of the perovskite solar cell module, the P2 process cuts the prepared first carrier transmission layer/perovskite layer/second carrier transmission layer sandwich structure, so that part of the bottom transparent conductive electrode is exposed. However, the perovskite in the cut section is exposed to the air, and after the back electrode is prepared, the back electrode is in direct contact with the perovskite layer at the section, and the halogen in the perovskite is easy to diffuse and react with the electrode, so that the stability of the module is easy to be reduced, and meanwhile, the perovskite is in direct contact with the electrode, so that the parallel resistance is increased, and electric leakage is easy to occur.
In view of this, the present invention has been made.
Disclosure of Invention
The invention aims to provide a perovskite battery module, a preparation method thereof and electric equipment so as to solve the technical problems.
The invention is realized in the following way:
in a first aspect, the present invention provides a perovskite battery module comprising a substrate, a conductive layer, a first carrier layer, a perovskite light absorbing layer, a second carrier layer, and a back electrode layer;
the conductive layer, the first carrier layer, the perovskite light absorption layer and the second carrier layer are sequentially stacked on the substrate;
the conducting layer comprises a plurality of conducting sub-electrodes which are separated into a plurality of conducting sub-electrodes which are distributed at intervals, the separation grooves between two adjacent conducting sub-electrodes are filled with transmission materials of a first carrier layer, and a three-layer structure formed by the first carrier layer, the perovskite light absorption layer and the second carrier layer is separated into at least five sandwich structures which are distributed at intervals; the at least five sandwich structures and the plurality of conductive sub-electrodes are distributed in a staggered manner, so that separation grooves between two adjacent conductive sub-electrodes are covered by the sandwich structures, and the separation section of each sandwich structure extends from one end of the second carrier layer to the conductive sub-electrode;
the back electrode layers are arranged on the second carrier layers of the two adjacent sandwich structures, and extend to the conductive sub-electrodes along the separation sections of the two adjacent sandwich structures and cover the conductive sub-electrodes, so that the two adjacent sandwich structures and the conductive sub-electrodes in contact form a single sub-cell structure;
in each sub-battery structure, an insulating shielding layer is further arranged between the back electrode layer and the separation sections of the two adjacent sandwich structures.
In a second aspect, the present invention further provides a method for preparing the perovskite battery module, which includes:
sequentially forming the first carrier layer, the perovskite light absorption layer and the second carrier layer on a conductive substrate with the conductive layer;
carrying out P2 laser scribing on the device;
depositing an insulating shielding layer at the position of the P2 laser scribing by adopting a Mask so that the insulating shielding layer covers the corresponding conductive sub-electrode and the section generated by the P2 laser scribing;
carrying out P2-1 laser scribing on the device, exposing the conductive sub-electrode corresponding to the position of the P2 laser scribing, and reserving the insulating shielding layers of the sections at the two sides;
forming the back electrode layer on the device subjected to P2-1 laser scribing;
and carrying out P3 laser scribing on the device.
In a third aspect, the invention also provides electric equipment, which comprises the perovskite battery module.
The invention has the following beneficial effects: by arranging the insulating shielding layer between the back electrode layer and the cross section of the sandwich structure, the back electrode is prevented from being directly contacted with perovskite in the cross section of the sandwich structure, and the stability of the perovskite solar cell is further improved. In addition, compared with the traditional method, by using Mask after the P2 process, the insulating shielding layer is formed by direct deposition (such as low-temperature PECVD deposition), and the insulating shielding layer covers the bottom transparent conductive electrode exposed by the P2 process; the P2-1 laser scribing process is synchronously added, and the insulating shielding layer covered on the bottom conductive electrode is removed, so that the bottom conductive electrode is exposed again, good contact can be formed after the back electrode is deposited, and further the back electrode is not contacted with perovskite in the cross section of the sandwich structure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a perovskite battery module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a preparation process of a perovskite battery module according to an embodiment of the invention.
Icon: a 100-perovskite battery module; 110-a substrate; 120-a conductive layer; 130-a first carrier layer; a 140-perovskite light absorbing layer; 150-a second carrier layer; 160-a back electrode layer; 170-insulating shielding layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
The preparation method is characterized in that a cross section of a sandwich structure of a first carrier layer/a perovskite light absorption layer/a second carrier layer is cut through aiming at a P2 process, after the back electrode is prepared, the back electrode is in direct contact with the perovskite layer at the cross section, and as halogen in the perovskite is easy to diffuse and react with the electrode, the stability of a module is easy to reduce, and meanwhile, the perovskite is in direct contact with the electrode, the parallel resistance is also increased, so that the problem of electric leakage is easy to generate. After extensive research and practice, the inventors have proposed that after the P2 process, an inorganic layer (e.g., al 2 O 3 、SiON x 、SiN x 、SiO x Etc.), an insulating shielding layer is formed, and the insulating shielding layer covers the bottom conductive electrode exposed by the P2 process; synchronously adding P2-1 laser scribing process, removing the insulating shielding layer covered on the bottom transparent conductive electrode to make the bottom transparent conductiveThe electrode is exposed again, and good contact can be formed after the back electrode is deposited. The insulating and shielding layer can shield a part of the active layer with a sandwich structure, the coverage area is very small and negligible, and the total area of the final active layer is not basically affected. According to the scheme, the back electrode is prevented from being directly contacted with perovskite in the cross section of the sandwich structure, and the stability of the perovskite solar cell can be improved.
Specifically, referring to fig. 1, some embodiments of the present invention provide a perovskite battery module 100 including a substrate 110, a conductive layer 120, a first carrier layer 130, a perovskite light absorbing layer 140, a second carrier layer 150, and a back electrode layer 160.
The conductive layer 120, the first carrier layer 130, the perovskite light absorbing layer 140, and the second carrier layer 150 are sequentially stacked on the substrate 110.
In some embodiments, substrate 110 includes, but is not limited to, any of glass, silicon wafer, carbon fiber, marble, PI, and PET.
The conductive layer 120 includes conductive sub-electrodes separated into a plurality of spaced apart conductive sub-electrodes, and in some embodiments, a separation groove between two adjacent conductive sub-electrodes has a width of 30um to 100um, for example, 30um, 40um, 50um, 60um, 70um, 80um, 90um, 100um, or the like. The thickness of the conductive layer is 100nm to 500nm, for example, 100nm, 200nm, 300nm, 400nm, 500nm, or the like.
In some embodiments, the material of the conductive layer includes, but is not limited to, at least one of a transparent conductive material, a metal conductive material, and a highly conductive material, the transparent conductive material including, but not limited to, at least one of indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, and indium zinc oxide; the metallic conductive material includes, but is not limited to, at least one of Au, ag, cu, ni, ti and Cr; the highly conductive material includes, but is not limited to, at least one of graphene, nano silver wire, and carbon nanotube. For example, one of ITO conductive glass, FTO conductive glass, AZO conductive glass, silver nanowire-modified conductive glass, graphene-modified conductive glass, and carbon nanotube layer-modified conductive glass is often used as the transparent substrate and the transparent electrode (conductive layer 120).
Further, the separation grooves between two adjacent conductive sub-electrodes are filled with the transmission material of the first carrier layer 130, the three-layer structure formed by the first carrier layer 130, the perovskite light absorbing layer 140 and the second carrier layer 150 is divided into at least five sandwich structures distributed at intervals, and the at least five sandwich structures and the plurality of conductive sub-electrodes are distributed in a staggered manner, so that the separation grooves between two adjacent conductive sub-electrodes are covered by the sandwich structures, and the separation section of each sandwich structure extends from one end of the second carrier layer 150 to the conductive sub-electrode. It should be noted that the number of the "sandwich" structures herein is specifically set according to the size of the perovskite battery module 100, and is not particularly limited.
In some embodiments, the width of the separation groove between two adjacent "sandwich" structures is 30um to 100um, e.g., 30um, 40um, 50um, 60um, 70um, 80um, 90um, 100um, etc.
In some embodiments, the first carrier layer 130 and the second carrier layer 150 are selected from a hole transport layer material and an electron transport layer material, respectively, i.e., the first carrier layer 130 is a hole transport layer, the second carrier layer 150 is an electron transport layer, or the first carrier layer 130 is an electron transport layer, and the second carrier layer 150 is a hole transport layer. In particular, the hole transport layer material includes, but is not limited to, spiro-OMeTAD, PEDOT: PSS, TPD, PTAA, P3HT, PCPDTBT, ni x O、V 2 O 5 、CuI、MoO 3 CuO and Cu 2 At least one of O; electron transport layer materials include, but are not limited to, titanium oxide (TiO) 2 ) Zinc oxide (ZnO), tin oxide (SnO) 2 ) Nickel oxide (NiO), magnesium oxide (MgO), copper oxide (CuO), copper oxide (Cu) 2 O) and tungsten oxide (WO 3 ) At least one of them.
In some embodiments, the perovskite light absorbing layer 140 is made of a material having a chemical formula ABX 3 Wherein A is CH 3 NH 3 + (MA + )、NH 2 ＝CHNH 2 + (FA + )、C 4 H 9 NH 3 + 、Cs + And Rb + At least one of (2); b is Pb 2+ 、Sn 2+ 、Ge 2+ 、Sb 3+ 、Bi 3 + 、Ag + 、Au 3+ And Ti is 4+ At least one of (a) and (b); x is Cl - 、Br - 、I - Or at least one halogen-like species.
In some embodiments, to achieve better electron and hole transport, the thicknesses of the first carrier layer 130 and the second carrier layer 150 are less than or equal to 100nm, preferably 10-100 nm; in order to achieve a preferable light absorption effect, the thickness of the perovskite light absorption layer is 500nm to 2000nm, for example, 500nm, 800nm, 1000nm, 1200nm, 1500nm, 1800nm, 2000nm, or the like.
Further, the back electrode layer 160 is disposed on the second carrier layer 150 of the two adjacent "sandwich" structures, and the back electrode layer 160 extends to and covers the conductive sub-electrodes along the separation sections of the two adjacent "sandwich" structures, so that the two adjacent "sandwich" structures and the conductive sub-electrodes in contact form a single sub-cell structure. In each sub-cell structure, an insulating shielding layer 170 is further disposed between the back electrode layer 160 and the separation sections of two adjacent "sandwich" structures. The insulating shielding layer 170 can prevent the perovskite in the cross-section structure of the back electrode layer 160 and the sandwich structure from being in direct contact, so that the stability of the perovskite battery module is provided.
For reference, in some embodiments, the insulating shield layer has a thickness of 10nm to 5um. The material of the insulating shielding layer comprises but not limited to Al 2 O 3 、SiON x 、SiN x And SiO x And at least one of inorganic materials.
In some embodiments, the material of the back electrode layer is metal, specifically, the material of the back electrode layer includes, but is not limited to, any one of Au, ag, and Cu.
Some embodiments of the present invention further provide a method for preparing the perovskite battery module, which includes: sequentially forming a first carrier layer, a perovskite light absorption layer and a second carrier layer on a conductive substrate with the conductive layer; carrying out P2 laser scribing on the device; depositing an insulating shielding layer at the position of the P2 laser scribing by adopting a Mask so that the insulating shielding layer covers the corresponding conductive sub-electrode and the section generated by the P2 laser scribing; carrying out P2-1 laser scribing on the device, exposing the conductive sub-electrode corresponding to the position of the P2 laser scribing, and reserving the insulating shielding layers on the sections of the two sides; forming a back electrode layer on the device subjected to P2-1 laser scribing; and carrying out P3 laser scribing on the device.
Referring to fig. 2 for reference, the preparation method of the perovskite battery module comprises the following specific steps:
i. the conductive substrate (e.g., transparent substrate) is cleaned.
It should be noted that, the conductive substrate herein is that the surface of the substrate 110 is covered with a whole layer of conductive material. For example, ITO conductive glass, FTO conductive glass, AZO conductive glass, silver nanowire-modified conductive glass, graphene-modified conductive glass, and carbon nanotube layer-modified conductive glass are often used. The cleaning means is a conventional means for cleaning a conductive substrate in the art, for example, deionized water, acetone, an optical glass cleaner, isopropanol are adopted for ultrasonic cleaning, and ultraviolet ozone treatment is carried out to enhance the wettability of the surface of the substrate.
P1 laser scribing is carried out on the conductive substrate to form a plurality of small conductive sub-electrodes.
Specifically, the laser scribing P1 is performed by using a femtosecond laser scribing device, different laser power parameters and scribing conditions are selected according to different conductive substrate types, and the scribing width is 30-100 um.
A first carrier layer 130, such as a hole transport layer, is prepared.
Specifically, the preparation method of the first carrier layer 130 may be a uniform film forming method such as material solution coating, vapor deposition, etc., and typically the film thickness is not more than 100nm.
iV. a perovskite light absorbing layer 140 is prepared.
Specifically, the perovskite light absorbing layer 140 may be deposited by any solution or vapor deposition method such as slit coating, knife coating, screen printing, vacuum evaporation, ink jet printing, etc., and the thickness of the deposition is 500nm to 2000nm.
And v. preparing a second carrier layer 150, such as an electron transport layer.
Specifically, the second carrier layer 150 may be prepared by a uniform film formation method such as material solution coating, vapor deposition, etc., and typically has a film thickness of not more than 100nm.
Vi. P2 laser scribing the device.
Specifically, the laser scribing P2 uses a femtosecond laser device to scribe the mold, and the scribing width is 30um to 100um.
Via, using Mask masking, an insulating shield 170 is deposited at the laser scribe P2 position.
Specifically, a Mask is matched, low-temperature PECVD, sputter equipment is adopted for deposition, the thickness is 10 nm-5 um, and the insulating shielding layers cover the width of 1-10 um of the cross section of the sandwich structure at the left and right positions of the P2 scribing.
Viii. P2-1 laser scribing of the device exposes the conductive sub-electrodes (transparent substrates).
Specifically, the P2-1 laser scribing adopts a femtosecond laser device to scribe the die, and the scribing width is 30 um-100 um.
IX. a metal back electrode layer 160 is deposited over the device of the insulating shield.
Specifically, the metal electrode can be prepared by adopting metals such as Au, ag, cu and the like and adopting a vacuum thermal evaporation method.
And X, carrying out P3 laser scribing on the complete device to finish the preparation of the perovskite battery module 100.
Specifically, the laser scribing P3 uses a femtosecond laser device to scribe the mold, and the scribing width is 30 to 100um.
It should be noted that the operations of the above process steps are adjusted with reference to the materials and structures of the perovskite battery module 100 and fig. 2.
Further, the invention also provides electric equipment, which comprises the perovskite battery module. For example, the powered device may be a solar fan, a solar light, a solar water pump, a solar vehicle, or the like.
The features and capabilities of the present invention are described in further detail below in connection with the examples.
Example 1
The present embodiment provides a method for preparing the perovskite battery module 100 as shown in fig. 1, the method for preparing the perovskite battery module referring to fig. 2, specifically comprising the following steps:
firstly, sequentially using deionized water, acetone, an optical glass cleaner and isopropanol to ultrasonically clean a transparent glass substrate, and drying the transparent glass substrate in an oven at 60 ℃ for 6 hours.
And secondly, evaporating an ITO conductive layer by adopting thermal evaporation, wherein the thickness of the ITO conductive layer is 150nm, and the resistance is 15 omega/≡. And scribing and etching the substrate conductive layer by using a femtosecond laser device, wherein the etching width is 35um. And then sequentially adopting deionized water, acetone, an optical glass cleaner and isopropanol for ultrasonic cleaning, and carrying out ultraviolet ozone treatment to enhance the wettability of the surface of the substrate.
And thirdly, depositing 5mg/mL PTAA solution (Mw-10000) on the transparent conductive substrate by spin coating, wherein spin coating parameters are 4000rpm,30s, acceleration is 2000rpm/s, and annealing at 100 ℃ for 10min to finish the preparation of the hole transport layer.
Fourthly, cleaning the surface of the PTAA transmission layer by adopting DMF to improve wettability, then depositing FAPbI3 perovskite solution (VDMF/VDMSO=9:1) with the concentration of 1.35M, rotating at 5000rpm for 25s, rotating at 2500rpm/s, coating a perovskite precursor film dynamically by using 100 microliter chlorobenzene anti-solvent at 20s to promote uniform growth of crystals, and then annealing at 150 ℃ for 15mins in air (R.H. to 40%) to finish preparation of the perovskite light absorption layer.
And fifthly, spin-coating 10mg/mL of PC61BM chlorobenzene solution on the upper surface of the perovskite film, wherein the spin-coating rotating speed is 2000rpm,60s, and thus the electron transport layer can be obtained.
And sixthly, performing P2 line etching by using a femtosecond laser device, and optimizing etching parameters to reduce damage to perovskite and a functional layer, wherein the etching width is 35um.
Seventh, the SiN is deposited by adopting a low-temperature PECVD technology in combination with a Mask x Insulation ofThe protective layer is provided with a protective layer,
the thickness is 500nm, and the insulating shielding layers cover the width of the cross section 2um of the sandwich structure at the left and right positions of the P2 scribing.
Eighth step, adopt femto second laser equipment to carry out the sculpture of P2-1 line, the sculpture position adopts equipment accurate location P2 marking off region, accurate setting up laser etching parameter according to insulating layer thickness, the sculpture parameter adjusts the damage that optimization reduced perovskite and functional layer, sculpture width 35um, each 2um width insulating layer about remaining, and the insulating layer is got rid of as far as possible completely and is not influenced the bottom conducting layer.
And ninth, depositing an Ag electrode layer with the thickness of 100nm on the scribed quasi device by vacuum thermal evaporation.
And tenth, further adopting a femtosecond laser device to etch the P3 line, etching the metal electrode with the width of 35um on the surface, cutting off the metal electrode on the surface, forming effective series connection of sub-batteries, and realizing the preparation of the perovskite battery module.
Example 2
The present embodiment differs from embodiment 1 only in that in the first step, the transparent glass is replaced with a PET flexible substrate, and the flexible perovskite solar cell module can be realized by adopting the subsequent steps as well.
Example 3
In the third and fifth steps, the p-type PTAA transmission layer is replaced by n-type SnO 2 And the transmission layer is replaced by a p-type spiro-OMeTAD transmission layer, so that the preparation of the trans-perovskite solar cell module can be realized.
In summary, the perovskite battery module and the preparation method thereof according to the embodiment of the invention utilize Mask to directly deposit the inorganic layer (such as Al) by low-temperature PECVD after the P2 process 2 O 3 、SiON x 、SiN x 、SiO x Etc.), an insulating shielding layer is formed, and the insulating shielding layer covers the bottom conductive electrode exposed by the P2 process; and a P2-1 laser scribing process is synchronously added, and an insulating shielding layer covered on the bottom conductive electrode is removed, so that the bottom conductive electrode is exposed again, and good contact can be formed after back electrode deposition. The insulating shield layer shields a portion of the sandwich junctionThe active layer in the structural section has a very small footprint, negligible, and substantially no impact on the total area of the final active layer. According to the scheme, the back electrode is prevented from being directly contacted with perovskite in the cross section of the sandwich structure, and the stability of the perovskite solar cell can be improved.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The perovskite battery module is characterized by comprising a substrate, a conductive layer, a first carrier layer, a perovskite light absorption layer, a second carrier layer and a back electrode layer;
the conductive layer, the first carrier layer, the perovskite light absorption layer and the second carrier layer are sequentially stacked on the substrate;
the conducting layer comprises a plurality of conducting sub-electrodes which are separated into a plurality of conducting sub-electrodes which are distributed at intervals, the separation grooves between two adjacent conducting sub-electrodes are filled with transmission materials of a first carrier layer, and a three-layer structure formed by the first carrier layer, the perovskite light absorption layer and the second carrier layer is separated into at least five sandwich structures which are distributed at intervals; the at least five sandwich structures and the plurality of conductive sub-electrodes are distributed in a staggered manner, so that separation grooves between two adjacent conductive sub-electrodes are covered by the sandwich structures, and the separation section of each sandwich structure extends from one end of the second carrier layer to the conductive sub-electrode;
the back electrode layers are arranged on the second carrier layers of the two adjacent sandwich structures, and extend to the conductive sub-electrodes along the separation sections of the two adjacent sandwich structures and cover the conductive sub-electrodes, so that the two adjacent sandwich structures and the conductive sub-electrodes in contact form a single sub-cell structure;
in each sub-battery structure, an insulating shielding layer is further arranged between the back electrode layer and the separation sections of the two adjacent sandwich structures.
2. The perovskite battery module of claim 1, wherein the insulating barrier layer has a thickness of 10nm to 5um.
3. The perovskite battery module of claim 1, wherein a width of a separation groove between two adjacent conductive sub-electrodes is 30um to 100um;
and/or the width of the separation groove between two adjacent sandwich structures is 30-100 um.
4. A perovskite battery module as claimed in any one of claims 1 to 3, wherein the substrate is selected from any one of glass, silicon wafer, carbon fiber, marble, PI and PET;
and/or the material of the conductive layer is at least one selected from transparent conductive materials, metal conductive materials and high conductive materials, wherein the transparent conductive materials comprise at least one selected from indium tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide and indium zinc oxide; the metallic conductive material includes at least one of Au, ag, cu, ni, ti and Cr; the high-conductivity material comprises at least one of graphene, nano silver wires and carbon nanotubes;
and/or the first and second carrier layers are respectively selected from hole transport layer materials and electron transport layer materials, the hole transport layer materials are selected from Spiro-OMeTAD, PEDOT: PSS, TPD, PTAA, P3HT, PCPDTBT, ni x O、V 2 O 5 、CuI、MoO 3 CuO and Cu 2 At least one of O; the electron transport layer material is at least one selected from titanium oxide, zinc oxide, tin oxide, nickel oxide, magnesium oxide, copper oxide, cuprous oxide and tungsten oxide;
and/or the number of the groups of groups,the perovskite light absorption layer is made of a material with a chemical general formula of ABX 3 Wherein A is CH 3 NH 3 + (MA + )、NH 2 ＝CHNH 2 + (FA + )、C 4 H 9 NH 3 + 、Cs + And Rb + At least one of (2); b is Pb 2+ 、Sn 2+ 、Ge 2+ 、Sb 3+ 、Bi 3+ 、Ag + 、Au 3+ And Ti is 4+ At least one of (a) and (b); x is Cl - 、Br - 、I - Or at least one halogen-like compound;
and/or the material of the insulating shielding layer is selected from Al 2 O 3 、SiON x 、SiN x And SiO x At least one of (a) and (b);
and/or the material of the back electrode layer is metal, preferably, the material of the back electrode layer is selected from any one of Au, ag and Cu.
5. A perovskite battery module as claimed in any one of claims 1 to 3, wherein the thickness of the conductive layer is 100nm to 500nm; and/or the thickness of the first carrier layer and the second carrier layer is less than or equal to 100nm; and/or the thickness of the perovskite light absorption layer is 500 nm-2000 nm.
6. A method of manufacturing the perovskite battery module as claimed in any one of claims 1 to 5, comprising:
sequentially forming the first carrier layer, the perovskite light absorption layer and the second carrier layer on a conductive substrate with the conductive layer;
carrying out P2 laser scribing on the device;
depositing an insulating shielding layer at the position of the P2 laser scribing by adopting a Mask so that the insulating shielding layer covers the corresponding conductive sub-electrode and the section generated by the P2 laser scribing;
carrying out P2-1 laser scribing on the device, exposing the conductive sub-electrode corresponding to the position of the P2 laser scribing, and reserving the insulating shielding layers of the sections at the two sides;
forming the back electrode layer on the device subjected to P2-1 laser scribing;
and carrying out P3 laser scribing on the device.
7. The method according to claim 6, wherein the conductive substrate having the conductive layer is obtained by scribing a substrate covered with the entire conductive film with P1 laser, and preferably the P1 laser scribing is performed with a femtosecond laser scribing apparatus, and the scribing width is 30um to 100um.
8. The method for manufacturing a perovskite battery module according to claim 6, wherein the P2 laser scribing and the P2-1 laser scribing are performed by a femtosecond laser scribing device, and the scribing widths are 30 um-100 um.
9. The method for manufacturing a perovskite battery module according to any one of claims 6 to 8, wherein the deposited insulating and shielding layer is deposited by low temperature PECVD or Sputer equipment, and the thickness of the deposited insulating and shielding layer is 10nm to 5um; preferably, after the P2-1 laser scribing, the width of the insulating shielding layer reserved on the sections on both sides of the position of the P2 laser scribing is 1 um-10 um.
10. An electric device, characterized in that it comprises the perovskite battery module as claimed in any one of claims 1 to 5.
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