CN117412571A - Nanofluid immersion type jet cooling device based on EHD conduction and control method - Google Patents
Nanofluid immersion type jet cooling device based on EHD conduction and control method Download PDFInfo
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- 238000007654 immersion Methods 0.000 title claims abstract description 21
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- 239000007788 liquid Substances 0.000 claims abstract description 36
- 230000000630 rising effect Effects 0.000 claims abstract description 30
- 238000007789 sealing Methods 0.000 claims abstract description 8
- 239000002105 nanoparticle Substances 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims description 11
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- 230000001133 acceleration Effects 0.000 claims description 5
- 238000010494 dissociation reaction Methods 0.000 claims description 4
- 230000005593 dissociations Effects 0.000 claims description 4
- 230000006798 recombination Effects 0.000 claims description 4
- 238000005215 recombination Methods 0.000 claims description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
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- 238000004220 aggregation Methods 0.000 claims description 2
- 230000003111 delayed effect Effects 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000002082 metal nanoparticle Substances 0.000 claims description 2
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 17
- 238000013461 design Methods 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 abstract description 5
- 230000004907 flux Effects 0.000 abstract description 3
- 230000005514 two-phase flow Effects 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
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- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000005086 pumping Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20709—Modifications to facilitate cooling, ventilating, or heating for server racks or cabinets; for data centers, e.g. 19-inch computer racks
- H05K7/208—Liquid cooling with phase change
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
- G06F1/16—Constructional details or arrangements
- G06F1/20—Cooling means
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20218—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant without phase change in electronic enclosures
- H05K7/20281—Thermal management, e.g. liquid flow control
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
- H05K7/203—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures by immersion
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/20709—Modifications to facilitate cooling, ventilating, or heating for server racks or cabinets; for data centers, e.g. 19-inch computer racks
- H05K7/20836—Thermal management, e.g. server temperature control
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses an EHD conduction-based nanofluid immersion type jet cooling device and a control method, wherein the device comprises a cover plate, a first sealing gasket, a jet cooling cavity, a sinking guide type jet generator and a rising guide type jet generator which are assembled into a whole from top to bottom in sequence, and are fixed through bolts, and a heat radiating device is screwed with threaded holes of a chip main board by bolts so as to be arranged on the chip main board; the invention adopts the combination of the flexible electrode plate and the rigid cylindrical sleeve to realize the design of the immersed EHD jet device; meanwhile, the nanofluid consisting of an insulating heat-conducting liquid medium and nonmetallic nano particles is used as a cooling medium to directly submerge and cool the chip, and the high-efficiency heat dissipation of the high-power chip can be realized by combining solid-liquid two-phase flow impact jet flow; the combined design of the sinking guide type jet flow generator and the rising guide type jet flow generator is further adopted to realize the oscillating motion of the nano fluid and delay the accumulation of nano particles so as to maintain the high heat transfer performance of the nano fluid. The heat dissipation device can realize continuous and sufficient cooling of the high heat flux chip so as to meet the heat dissipation requirement of the high power server.
Description
Technical Field
The invention relates to the technical field of heat dissipation and cooling of data centers, in particular to a nanofluid immersion type jet cooling device based on EHD conduction and a control method.
Background
With the increasing development of the number and the scale of data centers, data center refrigeration faces serious challenges, and in order to solve the efficient heat dissipation of a data center server, it is required to ensure effective cooling of electronic components such as high heat flow power chips in the server, and develop a cooling system with high efficiency and low energy consumption. The air cooling technology has lower heat radiation capability and can not meet the heat radiation requirement of a server with high heat flux density in the future, so that the liquid cooling technology with the advantages of strong fluidity, high heat exchange coefficient and the like gradually becomes a research hot spot of the heat radiation technology of the server of the current data center.
The immersed liquid cooling refers to a cooling mode that a chip is in direct contact with a liquid working medium. The liquid working medium is generally high specific heat insulating fluid, and can rapidly take away heat without damaging the chip. The heat dissipation problem of the local heat concentration area can be effectively solved through the local convection heat transfer caused by jet cooling. For a single-phase immersed system, the cooling working medium is always kept in a liquid state in the heat exchange process, and the heat dissipation of the electronic equipment is realized through the system circulation.
Enhanced heat transfer by electrohydrodynamic pumping (EHD) is a method of introducing an electric field and its theory into the field of heat transfer science, where coulombic volumetric force generated by free charge in a liquid by an electric field is the main driving force of the electrohydrodynamic pump, and the interaction of the electric field, flow field and temperature field is utilized to achieve the purpose of enhanced heat transfer, which is considered as a very promising heat dissipation technology in many active enhanced heat exchange technologies.
Compared with the traditional liquid working medium, the solid particle movement in the nano fluid can strengthen the collision effect of the fluid and the wall surface, destroy the flowing boundary layer and lead to higher heat conductivity coefficient.
With the perfection of MEMS processing technology, the flexible EHD conduction pump is realized, the design of embedding the planar electrode on the flexible film such as PDMS can further improve the performance of the flexible pump, and the design of the miniaturized heat dissipation device aiming at the level of the server chip is facilitated.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide an EHD conduction-based nanofluid immersion type jet cooling device and a control method thereof, and the device and the method aim at solving the difficult problem that a limited space in a server is difficult to realize high heat flux density chip heat dissipation, and combine nanofluid with jet cooling driven by electric field acceleration so as to achieve the purpose of enhancing chip heat dissipation.
The aim of the invention is achieved by the following technical scheme:
an EHD conduction-based nanofluid immersion type jet cooling device is formed by sequentially overlapping and assembling a cover plate, a first sealing gasket, a jet cooling cavity, a sinking guide type jet generator and a rising guide type jet generator from top to bottom into a whole;
the sinking guide type jet generator is internally provided with a sinking guide type sleeve, a sinking guide type flexible electrode plate and a first ground electrode binding post; the first grounding terminal contacts and is connected with a first narrow electrode of the sinking guide type flexible electrode plate through a grounding wiring hole arranged in the sinking guide type flexible electrode plate and a grounding wiring hole arranged in the sinking guide type sleeve;
the lifting guide type jet generator is internally provided with a lifting guide type sleeve, a lifting guide type flexible electrode plate and a second high-voltage electrode binding post; the second high-voltage electrode binding post sequentially contacts and is connected with a second wide electrode arranged in the ascending guide type flexible electrode plate through a high-voltage electrode binding hole arranged in the ascending guide type flexible electrode plate and a high-voltage electrode binding hole arranged in the ascending guide type sleeve.
A control method of an EHD conduction-based nanofluid immersion type jet cooling device, comprising:
filling nano fluid through a liquid inlet of the cover plate, filling the inner space of the jet cooling cavity, and immersing the chip on the chip main board;
b, the first wide electrode and the second wide electrode are respectively communicated with the high-voltage electrode through a first high-voltage electrode binding post and a second high-voltage electrode binding post, and the first narrow electrode and the second narrow electrode are respectively communicated with the earth electrode through a first earth electrode binding post and a second earth electrode binding post;
c, applying a high-voltage electric field to exceed a threshold value, so that the dissociation rate of the liquid working medium exceeds the recombination rate, different-number charge layers are respectively generated near the wide electrode and the narrow electrode, and the fluid movement of the narrow electrode towards the wide electrode is caused by the fact that coulomb forces of the different-number charge layers cannot be balanced with each other;
d, enabling the nanofluid to exchange heat with the chip; and the nanofluid after heat exchange of the chip flows out from the liquid outlets on two sides of the jet cooling cavity.
One or more embodiments of the present invention may have the following advantages over the prior art:
(1) The invention effectively utilizes the height space under the constraint of space limitation, and adopts the combination of the flexible electrode plate and the rigid sleeve to realize the design of the immersed EHD jet device;
(2) Compared with a conventional water pump, the EHD pump has the advantages of low power consumption, no noise, compact structure, little waste heat generation and the like;
(3) Compared with the traditional heat dissipation technology, the heat dissipation technology has the advantages that the immersion type liquid cooling heat exchange efficiency is higher, the solid-liquid two-phase flow impact jet flow can be combined to add the opportunities of inter-particle collision heat exchange and boundary layer damage, and the efficient heat dissipation of the high-power chip is realized, so that the cooling requirement of high-heat electronic equipment is met.
Drawings
FIG. 1 is an exploded schematic view of an EHD conduction-based nanofluid immersion jet cooling device;
FIG. 2 is an assembled schematic view of an EHD conduction-based nanofluid immersion jet cooling device;
FIGS. 3a and 3b are bottom views and cross-sectional views of a jet cooling chamber;
FIG. 4 is a schematic view of the structure of a dip-guided jet generator;
FIG. 5 is a schematic view of the structure of a sinking guide sleeve;
FIG. 6 is a schematic plan view of a sinking-oriented flexible electrode plate;
FIG. 7 is a schematic view of the structure of a dip-guided narrow electrode;
FIG. 8 is a schematic view of the structure of a sinking guide type wide electrode;
FIG. 9 is a schematic diagram of the structure of a lift-directed jet generator;
FIG. 10 is a schematic view of the structure of the lift-guiding sleeve;
FIG. 11 is a schematic plan view of an elevation-guiding flexible electrode plate;
FIG. 12 is a schematic view of the structure of a lift-guiding narrow electrode;
FIG. 13 is a schematic view of the structure of a lift-guiding wide electrode;
FIG. 14 is a schematic diagram of the wiring of a sink-guided jet generator and a lift-guided jet generator;
in the figure:
1. a cover plate; 2. a first sealing gasket; 3. a jet cooling chamber; 4. a sinking guide type jet generator; 5. a rising guide type jet generator; 6. a second sealing gasket; 7. a chip motherboard; 8. a bolt;
10. a direct current high voltage generator; 11. a liquid inlet; 12. a fixing hole; 31. a threaded hole; 32. a mounting hole; 33. a liquid outlet; 36. a jet flow through hole; 41. sinking guide sleeve; 42. sinking guide type flexible electrode plate; 43. a first ground terminal; 44. a first high voltage terminal; 45. a screw; 46. a nut; 51. a lifting guide sleeve; 52. lifting the guide type flexible electrode plate; 53. a second high voltage terminal; 54. a second earth terminal; 72. a chip; 73. a grounding coating; 74. connecting a high-pressure plating layer;
411. an external thread; 412. a ground electrode wiring hole; 413. a high voltage electrode wiring hole; 421. a first flexible insulating plate; 422. a first narrow electrode; 425. a first wide electrode; 521. a second flexible insulating plate; 522. a second narrow electrode; 524. and a second wide electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following examples and the accompanying drawings.
As shown in fig. 1 and 2, the nano-fluid immersion type jet cooling device based on EHD conduction comprises a cover plate 1, a first sealing gasket 2, a jet cooling cavity 3, a sinking guide type jet generator 4 and a rising guide type jet generator 5 which are stacked and assembled into a whole from top to bottom in sequence; the cover plate 1 comprises a liquid inlet 11 and four fixing holes 12 for positioning and fastening; the first gasket seal 2 includes four mounting holes 32 for mounting; the jet cooling cavity 3 comprises four threaded holes 31 for locking, four fixing holes 12 for positioning and fastening, four liquid outlets 33, five threaded holes 31 for connecting the sinking guide type jet generator 4, and four threaded holes 31 and five jet through holes 36 for connecting the rising guide type jet generator 5.
As shown in fig. 1-8, the sinking guide type jet generator 4 comprises a sinking guide type sleeve 41, a sinking guide type flexible electrode plate 42, a first ground electrode binding post 43, a first high voltage electrode binding post 44, a screw 45 and a nut 46; the sinking guide sleeve 41 comprises an external thread 411, a grounding electrode wiring hole 412, a high-voltage electrode wiring hole 413 and two fixing holes 12 for positioning and fastening; the sinking guiding type flexible electrode plate 42 comprises a first flexible insulating plate 421, a first narrow electrode 422, a grounding electrode wiring hole 412, two fixing holes 12 for positioning and fastening, a first wide electrode 425 and a high voltage electrode wiring hole 413, wherein the first narrow electrode 422 and the first wide electrode 425 are positioned on the inner surface of the first flexible insulating plate 421; the first ground terminal 43 is contacted and connected with the first narrow electrode 422 of the sinking guide type flexible electrode plate 42 through the ground terminal hole 412 of the sinking guide type flexible electrode plate 42 and the ground terminal hole 412 of the sinking guide type sleeve 41 in sequence; the first high-voltage terminal 44 is contacted and connected with the first wide electrode 425 of the sinking guide type flexible electrode plate 42 through the high-voltage terminal hole 413 of the sinking guide type flexible electrode plate 42 and the high-voltage terminal hole 413 of the sinking guide type sleeve 41 in sequence.
The two screws 45 are screwed with nuts 46 through the fixing holes 12 of the sinking guide type flexible electrode plate 42 and the fixing holes 12 of the sinking guide type sleeve 41 in sequence, and the components are connected into a whole to form the sinking guide type jet generator 4.
As shown in fig. 1 and 9-13, the rising guide type jet generator 5 comprises a rising guide type sleeve 51, a rising guide type flexible electrode plate 52, a second high-voltage electrode terminal 53, a second ground electrode terminal 54, a screw 45 and a nut 46; the lifting guide sleeve 51 comprises an external thread 411, a high-voltage electrode wiring hole 413, a ground electrode wiring hole 412 and two fixing holes 12 for positioning and fastening; the rising guide type flexible electrode plate 52 includes a second flexible insulating plate 521, a second narrow electrode 522, a ground electrode connection hole 412, a second wide electrode 524, a high voltage electrode connection hole 413, and two fixing holes 12 for positioning and fastening, wherein the second narrow electrode 522 and the second wide electrode 524 are located on the inner surface of the second flexible insulating plate 521.
The high-voltage electrode binding post 53 sequentially contacts and is connected with the second wide electrode 524 of the lifting guide type flexible electrode plate 52 through the high-voltage electrode binding hole 413 of the lifting guide type flexible electrode plate 52 and the high-voltage electrode binding hole 413 of the lifting guide type sleeve 51; the second ground terminal 54 is contacted and connected with the second narrow electrode 522 of the rising guide type flexible electrode plate 52 through the ground terminal hole 412 of the rising guide type flexible electrode plate 52 and the ground terminal hole 412 of the rising guide type sleeve 51 in order.
The two screws 45 are screwed with the nuts 46 through the fixing holes 12 of the ascending guide type flexible electrode plate 52 and the fixing holes 12 of the ascending guide type sleeve 51 in order, and the parts are connected into a whole to form the ascending guide type jet generator 5.
The first flexible insulating plate 421 of the sinking guide type flexible electrode plate 42 and the second flexible insulating plate 521 of the rising guide type flexible electrode plate 52 are made of flexible materials such as PDMS, and the thickness is 0.4-0.6mm;
the first narrow electrode 422 and the first wide electrode 425 are processed on the surface of the first flexible insulating plate 421, the second narrow electrode 522 and the second wide electrode 524 are processed on the surface of the second flexible insulating plate 521 by adopting magnetron sputtering, screen printing and other technologies, and the thicknesses of the electrodes are uniform and equal and are 0.03-0.04mm;
the liquid working medium of the heat dissipation device is insulated and conductive and is suitable for electric conductionNanofluid composed of liquid medium and nonmetallic nano-particles of pump, the conductivity range of the liquid medium is about 10 -11 ～10 -7 S/m。
As shown in fig. 1-3 b, the EHD conduction-based nanofluid immersion jet cooling device assembly process is as follows: the sinking guide type jet generator 4 is screwed with the threaded hole 31 of the jet cooling cavity 3 through the external thread 411 of the sinking guide type sleeve 41, and the sinking guide type jet generator 4 is arranged inside the jet cooling cavity 3; the rising guide type jet generator 5 is screwed with the threaded hole 31 of the jet cooling cavity 3 through the external thread 411 of the rising guide type sleeve 51, and the rising guide type jet generator 5 is arranged inside the jet cooling cavity 3; the four bolts 8 sequentially pass through the fixing holes 12 of the cover plate 1 and the mounting holes 32 of the first sealing gasket 2 from top to bottom, and then are screwed with the threaded holes 31 of the jet cooling cavity 3, so that all the components are connected into a whole to form the heat dissipation device.
As shown in fig. 1 and 14, the connection process of the jet generator and the direct-current high-voltage generator of the nanofluid immersion type jet cooling device is as follows: the first grounding electrode binding post 43 of the sinking guide type jet generator 4 is communicated with the inner cavity surface of the grounding coating 73 of the chip main board 7 through a metal wire, the second grounding electrode binding post 54 of the rising guide type jet generator 5 is communicated with the inner cavity surface of the grounding coating 73 of the chip main board 7 through a metal wire, the outer cavity surface of the grounding coating 73 is communicated with the negative electrode of the direct current high voltage generator 10, namely, the first narrow electrode 422 of the sinking guide type flexible electrode plate 42 is respectively communicated with the second narrow electrode 522 of the rising guide type flexible electrode plate 52; the first high-voltage electrode binding post 44 of the sinking guide type jet generator 4 is communicated with the inner surface of the high-voltage plating layer 74 cavity of the chip main board 7 through a metal wire, the second high-voltage electrode binding post 53 of the rising guide type jet generator 5 is communicated with the inner surface of the high-voltage plating layer 74 cavity of the chip main board 7 through a metal wire, the outer surface of the high-voltage plating layer 74 cavity is communicated with the positive electrode of the direct-current high-voltage generator 10, namely, the first wide electrode 425 of the sinking guide type flexible electrode plate 42 and the second wide electrode 524 of the rising guide type flexible electrode plate 52 are respectively communicated with high-voltage electrodes.
The nano fluid immersed jet cooling device and the chip are installed as follows: placing a second gasket seal 6 between the EHD conduction-based nanofluid immersion jet cooling device and the chip motherboard 7 with four threaded holes 31, chip 72, ground plating 73, and high voltage plating 74, wherein the second gasket seal 6 includes four mounting holes 32 for mounting; the four bolts 8 are used for screwing the fixing 12 of the jet cooling cavity 3 and the mounting holes 32 of the second sealing gasket 6 with the threaded holes 31 of the chip motherboard 7 from top to bottom.
The embodiment also provides a control method of the nanofluid immersion type jet cooling device based on EHD conduction, which comprises the following steps:
s1, filling nano fluid through a liquid inlet of a cover plate, filling an inner space of a jet cooling cavity, and immersing a chip on a chip main board;
s2, the first wide electrode and the second wide electrode are respectively communicated with the high-voltage electrode through a first high-voltage electrode binding post and a second high-voltage electrode binding post, and the first narrow electrode and the second narrow electrode are respectively communicated with the earth electrode through a first earth electrode binding post and a second earth electrode binding post;
s3, applying a high-voltage electric field to exceed a threshold value, so that the dissociation rate of the liquid working medium exceeds the recombination rate, different-number charge layers are respectively generated near the wide electrode and the narrow electrode, and the fluid movement of the narrow electrode towards the wide electrode is caused by the fact that coulomb forces of the different-number charge layers cannot be balanced with each other;
s4, enabling the nanofluid to exchange heat with the chip; and the nanofluid after heat exchange of the chip flows out from the liquid outlets on two sides of the jet cooling cavity.
The above S1 specifically includes: the liquid inlet of the cover plate is continuously filled with nano fluid composed of an insulating heat-conducting liquid medium and non-metal nano particles through an external pump, the nano fluid flows into a sinking guide type jet generator which is in locking connection with a threaded hole of the jet cooling cavity through a jet through hole of the jet cooling cavity, and fills the inner space of the jet cooling cavity, so that the chips on the chip main board are immersed, and immersed jet cooling of the chips is realized.
The S2 and S3 specifically include: when the direct current high voltage generator normally operates, the first wide electrode and the second wide electrode are respectively communicated with the high voltage electrode through the first high voltage electrode binding post and the second high voltage electrode binding post, and the first narrow electrode and the second narrow electrode are respectively communicated with the earth electrode through the first earth electrode binding post and the second earth electrode binding post; when the applied high-voltage electric field exceeds a threshold value, the dissociation rate of the liquid working medium exceeds the recombination rate, so that different-number charge layers are respectively generated near the wide electrode and the narrow electrode, and fluid movement of the narrow electrode towards the wide electrode is caused because coulomb forces acting on the different-number charge layers cannot be balanced with each other. The direction of the nanofluid flow guided by the sinking guide type electrode plate is shown in fig. 6, and the direction of the nanofluid flow guided by the rising guide type electrode plate is shown in fig. 11.
The step S4 specifically includes: under the action of an applied high-voltage electric field, the nano fluid in the sinking guide type jet generator performs multistage acceleration flow towards the upper surface of the chip along with the action of the different-number charge layer, and forms high-speed jet impact on the surface of the chip along the original flow direction of the nano fluid, so that the nano fluid and the chip perform strong heat exchange; the nano fluid in the ascending guide type jet generator carries out multistage acceleration flow far away from the upper surface of the chip under the action of the different number charge layer, the original flow direction of the nano fluid is changed, the nano fluid is matched with the adjacent sinking guide type jet generator to cause up-and-down oscillation movement of the nano fluid, the aggregation and deposition of nano particles are delayed, the nano particles in the nano fluid are uniformly distributed, and the heat conduction efficiency of the nano fluid is maintained; finally, the nano fluid after heat exchange with the chip flows out from four liquid outlets on two sides of the jet cooling cavity, and the design of one inlet and one outlet can improve the overall heat dissipation temperature uniformity of the device.
Although the embodiments of the present invention are described above, the embodiments are only used for facilitating understanding of the present invention, and are not intended to limit the present invention. Any person skilled in the art can make any modification and variation in form and detail without departing from the spirit and scope of the present disclosure, but the scope of the present disclosure is still subject to the scope of the appended claims.
Claims (10)
1. The nano-fluid immersed jet cooling device based on EHD conduction is characterized by being formed by sequentially overlapping and assembling a cover plate (1), a first sealing gasket (2), a jet cooling cavity (3), a sinking guide type jet generator (4) and a rising guide type jet generator (5) from top to bottom to form a whole;
a sinking guide type sleeve (41), a sinking guide type flexible electrode plate (42) and a first ground electrode binding post (43) are arranged in the sinking guide type jet generator (4); the first ground terminal (43) is contacted and connected with a first narrow electrode (422) of the sinking guide type flexible electrode plate (42) through a ground terminal wiring hole (412) arranged in the sinking guide type flexible electrode plate (42) and a ground terminal wiring hole (412) arranged in the sinking guide type sleeve (41);
a lifting guide type sleeve (51), a lifting guide type flexible electrode plate (52) and a second high-voltage electrode binding post (53) are arranged in the lifting guide type jet generator (5); the second high-voltage electrode binding post (53) sequentially passes through a high-voltage electrode binding hole (413) arranged in the rising guide type flexible electrode plate (52) and a high-voltage electrode binding hole (413) arranged in the rising guide type sleeve (51) to be contacted with and connected with a second wide electrode (524) arranged in the rising guide type flexible electrode plate (52).
2. The EHD conduction-based nanofluid submerged jet cooling device according to claim 1, wherein the sinking guide jet generator (4) is further provided with a first high-voltage terminal (44), a screw (45) and a nut (46);
the sinking guide type sleeve (41) comprises an external thread (411), a grounding electrode wiring hole (412), a high-voltage electrode wiring hole (413) and two fixing holes (12) for positioning and fastening; the sinking guide type flexible electrode plate (42) comprises a first flexible insulating plate (421), a first narrow electrode (422), two fixing holes (12) for positioning and fastening, a first wide electrode (425) and a high-voltage electrode wiring hole (413), wherein the first narrow electrode (422) and the first wide electrode (425) are positioned on the inner surface of the first flexible insulating plate (421);
the first high-voltage electrode binding post (44) is contacted with and connected with the first wide electrode (425) through the high-voltage electrode binding hole (413) of the sinking guide type flexible electrode plate (42) and the high-voltage electrode binding hole (413) in the sinking guide type sleeve (41) in sequence.
3. The EHD conduction-based nanofluid submerged jet cooling device according to claim 2, wherein the ascent-guided jet generator (5) is further provided with a second ground post (54), a screw (45) and a nut (46); the lifting guide type sleeve (51) comprises an external thread (411), a high-voltage electrode wiring hole (413), a ground electrode wiring hole (412) and two fixing holes (12) for positioning and fastening; the lifting guide type flexible electrode plate (52) comprises a second flexible insulating plate (521), a second narrow electrode (522), a ground electrode wiring hole (412), a second wide electrode (522), a high-voltage electrode wiring hole (413) and two fixing holes (12) for positioning and fastening; the second narrow electrode (522) and the second wide electrode (524) are positioned on the inner surface of the second flexible insulating plate (521);
the second grounding terminal (54) is contacted and connected with a second narrow electrode (522) of the lifting guide type flexible electrode plate (52) through a grounding terminal hole (412) of the lifting guide type flexible electrode plate (52) and a grounding terminal hole (412) of the lifting guide type sleeve (51) in sequence.
4. The EHD conduction-based nanofluid immersion jet cooling apparatus according to claim 3,
the sinking guide type jet generator (4) is fastened with the threaded hole (31) of the jet cooling cavity (3) through the external thread (411) of the sinking guide type sleeve (41), and the sinking guide type jet generator (4) is arranged in the jet cooling cavity (3);
the rising guide type jet generator (5) is fastened with the threaded hole (31) of the jet cooling cavity (3) through the external thread (411) of the rising guide type sleeve (51), and the rising guide type jet generator (5) is arranged in the jet cooling cavity (3).
5. An EHD conduction-based nanofluid immersion jet cooling device according to claim 1, wherein,
the cover plate (1) comprises a liquid inlet (11) and four positioning holes (12) for positioning and fastening;
the gasket includes four mounting holes (32) for mounting;
the jet cooling cavity (3) comprises four threaded holes (31) used for locking, four positioning holes (12) used for positioning and fastening, four liquid outlets (33), five threaded holes (31) used for connecting a sinking guide type jet generator (4), and four threaded holes (31) and five jet through holes (36) used for connecting a rising guide type jet generator (5).
6. An EHD conduction-based nanofluid immersion jet cooling device according to claim 3, wherein the first flexible insulating plate (421) and the second flexible insulating plate (521) are PDMS flexible materials with a thickness of 0.4-0.6mm.
7. An EHD conduction-based nanofluid submerged jet cooling device according to claim 3, wherein the first narrow electrode (422) and the first wide electrode (425) are processed by magnetron sputtering or screen printing technology on the inner surface of the first flexible insulating plate (421) and the second narrow electrode (522) and the second wide electrode (524) are processed by magnetron sputtering or screen printing technology on the inner surface of the second flexible insulating plate (521), and the thicknesses of the electrodes are uniform and equal and are 0.03-0.04mm.
8. A control method using the EHD conduction-based nanofluid immersion type jet cooling apparatus according to any one of claims 1 to 7, comprising:
filling nano fluid through a liquid inlet of the cover plate, filling the inner space of the jet cooling cavity, and immersing the chip on the chip main board;
b, the first wide electrode and the second wide electrode are respectively communicated with the high-voltage electrode through a first high-voltage electrode binding post and a second high-voltage electrode binding post, and the first narrow electrode and the second narrow electrode are respectively communicated with the earth electrode through a first earth electrode binding post and a second earth electrode binding post;
c, applying a high-voltage electric field to exceed a threshold value, so that the dissociation rate of the liquid working medium exceeds the recombination rate, different-number charge layers are respectively generated near the wide electrode and the narrow electrode, and the fluid movement of the narrow electrode towards the wide electrode is caused by the fact that coulomb forces of the different-number charge layers cannot be balanced with each other;
d, enabling the nanofluid to exchange heat with the chip; and the nanofluid after heat exchange of the chip flows out from the liquid outlets on two sides of the jet cooling cavity.
9. The method of controlling an EHD conduction-based nanofluid immersion jet cooling device according to claim 7, wherein a specifically comprises: the liquid inlet of the cover plate is continuously filled with nano fluid composed of an insulating heat-conducting liquid medium and non-metal nano particles through an external pump, the nano fluid flows into a sinking guide type jet generator which is in locking connection with a threaded hole of the jet cooling cavity through a jet through hole of the jet cooling cavity and fills the inner space of the jet cooling cavity, and the chip on the chip main board is immersed, so that immersed jet cooling of the chip is realized.
10. The method of controlling an EHD conduction-based nanofluid immersion jet cooling device according to claim 7, wherein D specifically comprises: under the action of an applied high-voltage electric field, the nano fluid in the sinking guide type jet generator performs multistage acceleration flow towards the upper surface of the chip along with the action of the different-number charge layer, and forms high-speed jet impact on the surface of the chip along the original flow direction of the nano fluid, so that the nano fluid and the chip perform strong heat exchange; the nano fluid in the ascending guide type jet generator carries out multistage acceleration flow far away from the upper surface of the chip under the action of the different number charge layer, the original flow direction of the nano fluid is changed, the nano fluid is matched with the adjacent sinking guide type jet generator to cause up-and-down oscillation movement of the nano fluid, the aggregation and deposition of nano particles are delayed, the nano particles in the nano fluid are uniformly distributed, and the heat conduction efficiency of the nano fluid is promoted; and finally, the nano fluid which is subjected to heat exchange with the chip flows out from the liquid outlets at two sides of the jet cooling cavity.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112185918A (en) * | 2020-05-29 | 2021-01-05 | 谷歌有限责任公司 | Impingement jet manifold for near-edge jet of chip cooling |
| CN113597826A (en) * | 2019-03-11 | 2021-11-02 | Apr 技术有限公司 | Cooling of electronic components using electrohydrodynamic flow cells |
| CN116501149A (en) * | 2023-04-07 | 2023-07-28 | 华南理工大学 | Server chip immersed liquid cooling heat dissipation device integrated with electrohydrodynamic pump |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113597826A (en) * | 2019-03-11 | 2021-11-02 | Apr 技术有限公司 | Cooling of electronic components using electrohydrodynamic flow cells |
| CN112185918A (en) * | 2020-05-29 | 2021-01-05 | 谷歌有限责任公司 | Impingement jet manifold for near-edge jet of chip cooling |
| CN116501149A (en) * | 2023-04-07 | 2023-07-28 | 华南理工大学 | Server chip immersed liquid cooling heat dissipation device integrated with electrohydrodynamic pump |
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