CN117393546A

CN117393546A - Half-bridge power module, full-bridge power module, motor controller and vehicle

Info

Publication number: CN117393546A
Application number: CN202210753093.XA
Authority: CN
Inventors: 刘春江; 张崇; 张建利
Original assignee: BYD Semiconductor Co Ltd
Current assignee: BYD Semiconductor Co Ltd
Priority date: 2022-06-29
Filing date: 2022-06-29
Publication date: 2024-01-12

Abstract

The invention discloses a half-bridge power module, a full-bridge power module, a motor controller and a vehicle thereof, wherein the half-bridge power module comprises: a substrate; the first conductive area, the second conductive area, the third conductive area and the fourth conductive area are arranged on the substrate, extend along the second direction, are used for being connected with direct current signals, and are used for outputting alternating current signals; the first power chips are arranged in the second conductive area at intervals and are respectively and electrically connected with the first conductive area and the second conductive area; the plurality of second power chips are arranged in the third conductive area at intervals, and are respectively and electrically connected with the second conductive area, the third conductive area and the fourth conductive area. According to the half-bridge power module, the first bridge arm and the second bridge arm form mutual inductance, so that parasitic inductance of the half-bridge power module can be reduced, and the heat dissipation effect is improved.

Description

Half-bridge power module, full-bridge power module, motor controller and vehicle

Technical Field

The invention relates to the technical field of half-bridges, in particular to a half-bridge power module, a full-bridge power module, a motor controller and a vehicle.

Background

Semiconductor power modules are widely used in industry, and are commonly used in inverters to convert ac to dc or from dc to ac.

In the related art, the semiconductor power module has the advantages of high integration level, small volume and the like. However, during the inversion process, the stray inductance of the loop generates excessive voltage during the switching of the semiconductor chip, electromagnetic interference is generated due to damped oscillation, switching loss is increased, and a plurality of chips are required to be connected in parallel if large current is to be output, but the mode causes the occupied position of the chips to be larger, and the inductance is increased accordingly.

Disclosure of Invention

The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, a first object of the present invention is to provide a half-bridge power module, which can reduce parasitic inductance of the half-bridge power module and improve heat dissipation of the half-bridge power module.

The second objective of the present invention is to provide a full-bridge power module.

A third object of the present invention is to propose a motor controller.

A fourth object of the present invention is to propose a vehicle.

The half-bridge power module according to the embodiment of the first aspect of the invention comprises: a substrate having a first direction and a second direction orthogonal to each other; the first conductive area, the second conductive area, the third conductive area and the fourth conductive area are arranged on the substrate at intervals along the first direction of the substrate, the second conductive area, the third conductive area and the fourth conductive area extend along the second direction, wherein the first conductive area and the third conductive area are used for being connected with direct-current electric signals, and the fourth conductive area is used for outputting alternating-current electric signals; the first power chips are arranged in the second conductive area at intervals, and are respectively and electrically connected with the first conductive area and the second conductive area; the second power chips are arranged in the third conductive area at intervals, and are respectively and electrically connected with the second conductive area, the third conductive area and the fourth conductive area.

According to the half-bridge power module provided by the embodiment of the invention, based on the layout design of the first conductive area, the second conductive area, the third conductive area and the fourth conductive area, the plurality of first power chips are arranged in the second conductive area and electrically connected with the first conductive area, and the plurality of second power chips are arranged in the third conductive area and electrically connected with the second conductive area and the fourth conductive area respectively. Therefore, when the half-bridge power module is electrified, a first bridge arm and a second bridge arm with opposite current flowing directions can be formed, mutual inductance is formed between the first bridge arm and the second bridge arm, parasitic inductance of the half-bridge power module can be reduced, and meanwhile, a plurality of first power chips and a plurality of second power chips can be distributed in corresponding conductive areas in a dispersed mode, so that the heat dissipation effect of the half-bridge power module can be improved.

According to some embodiments of the invention, the first, second and third conductive regions are located on the same side of the first direction of the substrate and the fourth conductive region is located on the other side of the first direction of the substrate.

According to some embodiments of the invention, the first conductive region extends along the first direction, the second conductive region is located on an outer peripheral side of the first conductive region, and the third conductive region is located on an outer peripheral side of the second conductive region.

According to some embodiments of the invention, the second conductive region includes a first conductive portion, a second conductive portion, and a third conductive portion connected to each other, the first conductive portion and the third conductive portion being located at both ends of the first conductive region in the second direction, respectively, the first conductive portion and the third conductive portion extending in the first direction, the second conductive portion being connected between one ends of the first conductive portion and the third conductive portion adjacent to the third conductive region, the plurality of first power chips being disposed within the first conductive portion and the third conductive portion at intervals from each other.

According to some embodiments of the invention, the plurality of first power chips are symmetrical about a central axis of the substrate along the second direction.

According to some embodiments of the invention, the substrate has a first edge, a second edge, a third edge, and a fourth edge connected end to end in sequence, the first edge and the third edge being opposite to each other in the first direction, the second edge and the fourth edge being opposite to each other in the second direction, the first conductive portion being disposed adjacent to the second edge.

According to some embodiments of the invention, the first conductive portion is parallel to the second edge, the third conductive portion is disposed adjacent to the fourth edge, and the third conductive portion is parallel to the fourth edge, and the second conductive portion is parallel to the third edge.

According to some embodiments of the invention, the width of the first conductive portion is equal to the width of the third conductive portion, the width of the first conductive portion being greater than the width of the second conductive portion.

According to some embodiments of the invention, the third conductive region includes a fourth conductive portion, a fifth conductive portion and a sixth conductive portion connected to each other, the fourth conductive portion being located between the first conductive portion and the second edge, the fifth conductive portion being located between the second conductive portion and the fourth conductive region, the sixth conductive portion being located between the third conductive portion and the fourth edge, the plurality of second power chips being disposed within the fifth conductive portion at intervals from each other.

According to some embodiments of the invention, the fourth and sixth conductive portions extend along the first direction, the fourth conductive portion is parallel to the second edge, the sixth conductive portion is parallel to the fourth edge, the fifth conductive portion extends along the second direction, and the fifth conductive portion is parallel to the third edge.

According to some embodiments of the invention, the first conductive region has a first aggregate conductive portion extending along the second direction and for accessing the direct current signal; the fourth conductive part is provided with a second summarizing conductive part which extends along the second direction and is used for accessing the direct current signal; the sixth conductive parts are provided with third summarizing conductive parts which extend along the second direction and are used for being connected with the direct current signals; the first summarizing conductive parts, the second summarizing conductive parts and the third summarizing conductive parts are arranged at intervals along the second direction.

According to some embodiments of the invention, the plurality of second power chips are symmetrical about a central axis of the substrate along the second direction.

According to some embodiments of the invention, the fourth conductive region includes a seventh conductive portion and a fourth conductive portion connected to each other, the fourth conductive portion is located between the seventh conductive portion and the third edge, the seventh conductive portion is electrically connected to the plurality of second power chips, and the fourth conductive portion is used for outputting an ac electrical signal.

According to some embodiments of the invention, the seventh conductive portion has conductive branches at both ends, the conductive branches extending in a direction towards the third conductive region.

According to some embodiments of the invention, a length of the seventh conductive portion along the second direction is greater than a length of the fourth aggregate conductive portion.

According to some embodiments of the invention, the first summary conducting part is connected with a first direct current connection point for connecting the direct current signal, the second summary conducting part is connected with a second direct current connection point for connecting the direct current signal, the third summary conducting part is connected with a third direct current connection point for connecting the direct current signal, and the fourth summary conducting part is provided with an alternating current terminal for outputting the alternating current signal; the first direct current connection point, the second direct current connection point and the third direct current connection point are located on one side of the substrate in the first direction and are distributed along the second direction, the polarity of the direct current electric signal connected with the second direct current connection point is the same as that of the direct current electric signal connected with the third direct current connection point and opposite to that of the direct current electric signal connected with the first direct current connection point, and the alternating current terminal is located on the other side of the substrate in the first direction.

According to some embodiments of the invention, the half-bridge power module further comprises: a first signal conductive region located between the second conductive region and the third conductive region, the first signal conductive region extending along the first direction; a second signal conductive region located between the third conductive region and the fourth conductive region, and extending along the second direction.

According to some embodiments of the invention, the half-bridge power module further comprises: the insulating cover body is arranged on the substrate and covers the first conductive area, the second conductive area, the third conductive area, the fourth conductive area, the plurality of first power chips and the plurality of second power chips.

According to a second aspect of the present invention, a full bridge power module includes: a heat dissipation plate; the half-bridge power modules are arranged on the heat dissipation plate, and are spaced apart from each other along the length direction of the heat dissipation plate, and are according to the embodiment of the first aspect of the invention.

A motor controller according to an embodiment of the third aspect of the present invention comprises a half-bridge power module according to an embodiment of the first aspect of the present invention or a full-bridge power module according to an embodiment of the second aspect of the present invention.

According to a fourth aspect of the present invention, a vehicle includes: a motor; a motor controller according to an embodiment of the third aspect of the present invention.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:

FIG. 1 is a schematic diagram of a half-bridge power module according to an embodiment of the invention;

FIG. 2 is the half-bridge power module shown in FIG. 1, wherein the first power chip and the second power chip are not shown;

FIG. 3 is a schematic diagram of a substrate of the half-bridge power module shown in FIG. 1;

FIG. 4 is a schematic diagram of a substrate of the half-bridge power module shown in FIG. 1, with conductive regions not shown;

FIG. 5 is a schematic diagram of a half-bridge power module according to another embodiment of the invention;

Fig. 6 is a schematic diagram of a full bridge power module according to an embodiment of the invention.

Reference numerals:

100: a half-bridge power module;

1: a substrate; 11: a first conductive region; 111: a first integrated conductive portion; 12: a second conductive region;

121: a first conductive portion; 122: a second conductive portion; 123: a third conductive portion; 13: a third conductive region;

131: a fourth conductive portion; 1311: a second integrated conductive portion; 132: a fifth conductive portion;

133: a sixth conductive portion; 1331: a third integrated conductive portion; 14: a fourth conductive region;

141: a seventh conductive portion; 1411: a conductive leg; 142: fourth aggregate conductive part;

15: a first direct current connection point; 16: a second dc connection point; 17: a third dc connection point;

18: an alternating current terminal; 19: a first signal conductive region; 20: a second signal conductive region;

21: a conductive layer; 22: an insulating layer; 23: a heat dissipation layer; 24: a first edge;

25: a second edge; 26: a third edge; 27: a fourth edge; 2: a first power chip;

3: a second power chip;

200: a full bridge power module; 201: and a heat dissipation plate.

Detailed Description

A half-bridge power module 100 according to an embodiment of the first aspect of the invention is described below with reference to fig. 1-6.

As shown in fig. 1 to 5, a half-bridge power module 100 according to a first embodiment of the present invention includes a substrate 1, a plurality of first power chips 2, and a plurality of second power chips 3. In the description of the present invention, "plurality" means two or more.

Specifically, the substrate 1 has a first direction and a second direction orthogonal to each other, and the first conductive region 11, the second conductive region 12, the third conductive region 13, and the fourth conductive region 14 are disposed on the substrate 1 at intervals and arranged along the first direction of the substrate 1, so that a short circuit problem due to overlapping of the conductive regions can be avoided. The second conductive area 12, the third conductive area 13 and the fourth conductive area 14 extend along the second direction, wherein the first conductive area 11 and the third conductive area 13 are used for accessing direct current signals, and the fourth conductive area 14 is used for outputting alternating current signals. The plurality of first power chips 2 are disposed in the second conductive region 12 at intervals from each other, and the plurality of first power chips 2 are electrically connected to the first conductive region 11 and the second conductive region 12, respectively. The plurality of second power chips 3 are disposed in the third conductive region 13 at intervals from each other, and the plurality of second power chips 3 are electrically connected to the second conductive region 12, the third conductive region 13, and the fourth conductive region 14, respectively.

If the first direction is the longitudinal direction of the substrate 1, the second direction is the width direction of the substrate 1; alternatively, if the first direction is the width direction of the substrate 1, the second direction is the longitudinal direction of the substrate 1, and the first direction may be set according to the actual situation, such as the shape of the substrate 1, and is not limited thereto.

For example, in the example of fig. 1 to 5, the substrate 1 may include a conductive layer 21, an insulating layer 22, and a heat dissipation layer 23 sequentially arranged from top to bottom in a thickness direction (for example, an up-down direction in fig. 3), wherein the conductive layer 21 may be etched to form a first conductive region 11, a second conductive region 12, a third conductive region 13, and a fourth conductive region 14, which are electrically connected to form a half-bridge circuit. The insulating layer 22 may be made of insulating material with high insulating strength, good heat conducting performance and stable chemical property, such as insulating ceramic, for example, al203, alN or Si3N4, etc., so that the insulating layer 22 may not only block the electrical connection between the conductive layer 21 and the heat dissipation layer 23, playing an insulating role, but also provide a heat dissipation channel for the loss generated during the operation of the subsequent power chip, and improve the overall heat dissipation of the half-bridge power module 100. Alternatively, the conductive layer 21 and the heat dissipation layer 23 may each be a copper layer, such that the substrate 1 is formed as a copper layer-ceramic layer-copper layer three-layer substrate

As shown in fig. 1, the number of the first power chips 2 and the second power chips 3 may be six, the six first power chips 2 are disposed in the second conductive region 12 at intervals, the six second power chips 3 are disposed in the third conductive region 13 at intervals, the first power chips 2 may be bonded to the first conductive region 11 through a wire or a copper sheet to achieve electrical connection of the first conductive region 11 and the second conductive region 12, and the second power chips 3 may also be bonded to the second conductive region 12 and the fourth conductive region 14 through a wire or a copper sheet to achieve electrical connection of the third conductive region 13 to the second conductive region 12 and the fourth conductive region 14.

Six first power chips 2 and six second power chips 3 are shown in fig. 1 for illustrative purposes, but it is obvious to one of ordinary skill in the art after reading the present disclosure that it is within the scope of the present disclosure to apply the present disclosure to other numbers of first power chips 2 and second power chips 3.

In addition, considering the case where a large current is required to be output, the number of power chips may be increased, and as shown in fig. 5, the number of first power chips 2 and the number of second power chips 3 in the half-bridge power module 100 may be eight. The total number of the first power chips 2 is the same as the total number of the second power chips 3.

Referring to fig. 2, when the half-bridge power module 100 is powered on, a part of the second power chip 3 may form a first bridge arm of the half-bridge circuit, and another part of the second power chip 3 and the first power chip 2 may form a second bridge arm of the half-bridge circuit, so that when the half-bridge power module 100 is connected, mutual inductance is formed between the first bridge arm and the second bridge arm to play a role in counteracting inductance, and parasitic inductance of the whole half-bridge power module 100 may be reduced.

The first conductive areas 11, the second conductive areas 12, the third conductive areas 13 and the fourth conductive areas 14 are arranged along the first direction at intervals, so that the plurality of first power chips 2 and the plurality of second power chips 3 can be distributed in the second conductive areas 12 and the third conductive areas 13, the situation that the power chips are compactly arranged is avoided, and therefore the heat dissipation effect of the half-bridge power module 100 can be improved.

According to the half-bridge power module 100 of the embodiment of the present invention, based on the layout design of the first conductive region 11, the second conductive region 12, the third conductive region 13 and the fourth conductive region 14, by disposing the plurality of first power chips 2 in the second conductive region 12 and electrically connecting the second conductive region 12 with the first conductive region 11, the plurality of second power chips 3 are disposed in the third conductive region 13 and electrically connecting the third conductive region 13 with the second conductive region 12 and the fourth conductive region 14, respectively. Therefore, when the half-bridge power module 100 is electrified, the first bridge arm and the second bridge arm with opposite current flowing directions can be formed, so that mutual inductance is formed between the first bridge arm and the second bridge arm, parasitic inductance of the half-bridge power module 100 can be reduced, and meanwhile, the plurality of first power chips 2 and the plurality of second power chips 3 can be distributed in corresponding conductive areas, so that the heat dissipation effect of the half-bridge power module 100 can be improved.

According to some embodiments of the invention, the first conductive region 11, the second conductive region 12 and the third conductive region 13 are located on the same side of the first direction of the substrate 1, and the fourth conductive region 14 is located on the other side of the first direction of the substrate 1. For example, in the examples of fig. 1 and 2, the first, second, and third conductive regions 11, 12, and 13 may be uniformly spaced apart in the second direction, and the above three conductive regions may be located at the left side of the substrate 1, and the fourth conductive region 14 may be located at the right side of the substrate 1. Therefore, the same side access of the substrate 1 is realized when the direct current electric signal is subsequently accessed, and the alternating current electric signal is accessed from the other side of the substrate 1, so that the structural arrangement of the half-bridge power module 100 is more regular, the half-bridge power module 100 is favorably packaged, the process difficulty can be reduced, and the production efficiency is improved.

Further, the first conductive region 11 extends in the first direction, the second conductive region 12 is located on the outer peripheral side of the first conductive region 11, and the third conductive region 13 is located on the outer peripheral side of the second conductive region 12. Referring to fig. 1 and 2, the second conductive region 12 extends along the circumferential direction of the first conductive region 11, and the third conductive region 13 extends along the circumferential direction of the second conductive region 12, so that the areas of the second conductive region 12 and the third conductive region 13 can be increased within the effective area of the conductive layer 21 of the substrate 1, so that the first power chip 2 and the second power chip 3 can be more dispersedly arranged within the second conductive region 12 and the third conductive region 13, the heat dissipation performance of the half-bridge power module 100 can be further improved, the utilization rate of the conductive layer 21 is improved, the arrangement of the four conductive regions is more compact, and the half-bridge power module 100 is convenient for miniaturization design.

According to some embodiments of the present invention, the second conductive region 12 includes a first conductive portion 121, a second conductive portion 122, and a third conductive portion 123 connected to each other, the first conductive portion 121 and the third conductive portion 123 being located at both ends of the first conductive region 11 in the second direction, respectively, the first conductive portion 121 and the third conductive portion 123 extending in the first direction, the second conductive portion 122 being connected between one ends of the first conductive portion 121 and the third conductive portion 123 adjacent to the third conductive region 13, and the plurality of first power chips 2 being disposed within the first conductive portion 121 and the third conductive portion 123 at intervals from each other. For example, in the example of fig. 2, the second conductive region 12 is C-shaped, and the opening of the second conductive region 12 is opened toward the direction of the first conductive region 11, at least a portion of the first conductive region 11 is located in the opening of the second conductive region 12, so that the second conductive region 12 is disposed along the circumferential direction of the first conductive region 11, and the space on both sides of the first conductive region 11 along the second direction is effectively utilized, so that the first conductive portion 121 and the third conductive portion 123 can be designed into the first conductive portion 121 and the third conductive portion 123 with a large area, so that the plurality of first power chips 2 can be distributed in the first conductive portion 121 and the third conductive portion 123, so that the half bridge power module 100 has good heat dissipation.

In some alternative embodiments, the plurality of first power chips 2 are symmetrical about the central axis of the substrate 1 in the second direction. For example, in the example of fig. 1, three of the six first power chips 2 are disposed at the first conductive portion 121, and the three first power chips 2 are uniformly spaced apart in the first direction, the remaining three first power chips 2 are disposed at the third conductive portion 123, and the remaining three first power chips 2 are also uniformly spaced apart in the first direction, and the first power chips 2 located at the first conductive portion 121 are aligned with the first power chips 2 located at the third conductive portion 123 in the second direction. Thereby, the plurality of first power chips 2 can be regularly arranged in the second conductive region 12, and heat dissipation of the half-bridge power module 100 is ensured.

According to some embodiments of the present invention, as shown in fig. 1, 2 and 4, the substrate 1 has a first edge 24, a second edge 25, a third edge 26 and a fourth edge 27 connected end to end, the first edge 24 and the third edge 26 being opposite to each other in a first direction, and the second edge 25 and the fourth edge 27 being opposite to each other in a second direction. The first conductive portion 121 is disposed adjacent to the second edge 25, and the first conductive portion 121 is parallel to the second edge 25, the third conductive portion 123 is disposed adjacent to the fourth edge 27, and the third conductive portion 123 is parallel to the fourth edge 27, and the second conductive portion 122 is parallel to the third edge 26. By the arrangement, the second conductive area 12 is in a regular C shape, and the structural layout inside the half-bridge power module 100 can be optimized, which is beneficial to improving the integration level of the half-bridge power module 100.

Further, the width of the first conductive portion 121 is equal to the width of the third conductive portion 123, and the width of the first conductive portion 121 is greater than the width of the second conductive portion 122. Since the first power chip 2 is disposed on the first conductive portion 121 and the third conductive portion 123, the area of the first conductive portion 121 and the third conductive portion 123 can be increased by setting the width of the first conductive portion 121 and the third conductive portion 123 to be larger, so that the first power chip 2 can be distributed and arranged in the first conductive portion 121 and the third conductive portion 123 conveniently, and the area of the second conductive portion 122 can be reduced while ensuring that the first conductive portion 121 and the third conductive portion 123 are connected to be the complete second conductive region 12 by setting the width of the second conductive portion 122 to be smaller, so that the conductive layer 21 leaves more space to set the third conductive region 13 and the fourth conductive region 14.

According to some specific embodiments of the present invention, the third conductive region 13 includes a fourth conductive portion 131, a fifth conductive portion 132, and a sixth conductive portion 133 connected to each other, the fourth conductive portion 131 being located between the first conductive portion 121 and the second edge 25, the fifth conductive portion 132 being located between the second conductive portion 122 and the fourth conductive region 14, the sixth conductive portion 133 being located between the third conductive portion 123 and the fourth edge 27, and the plurality of second power chips 3 being disposed within the fifth conductive portion 132 at intervals from each other. For example, in the examples of fig. 1, 2 and 5, the third conductive region 13 is C-shaped, and the opening of the third conductive region 13 is opened toward the direction of the first conductive region 11, and the second conductive region 12 is located in the opening, so that the third conductive region 13 is disposed along the circumferential direction of the second conductive region 12, and the space on both sides of the second conductive region 12 along the second direction is effectively utilized, thereby improving the utilization rate of the conductive layer 21.

Further, the fourth conductive portion 131 and the sixth conductive portion 133 extend along the first direction, the fourth conductive portion 131 is parallel to the second edge 25, the sixth conductive portion 133 is parallel to the fourth edge 27, the fifth conductive portion 132 extends along the second direction, and the fifth conductive portion 132 is parallel to the third edge 26. By the arrangement, the shape of the third conductive area 13 is a regular C shape, and the structural layout inside the half-bridge power module 100 can be optimized, which is beneficial to improving the integration level of the half-bridge power module 100.

Still further, referring to fig. 1 and 2, the first conductive region 11 has a first integrated conductive portion 111, and the first integrated conductive portion 111 extends along the second direction and is used for switching in the dc signal. The fourth conductive portion 131 has a second aggregate conductive portion 1311, and the second aggregate conductive portion 1311 extends along the second direction and is used for switching in the direct current signal. The sixth conductive portions 133 each have a third integrated conductive portion 1331, and the third integrated conductive portions 1331 extend along the second direction and are used for switching in the direct current signals. The first, second and third integrated conductive portions 111, 1311 and 1331 are arranged at intervals along the second direction. When the half-bridge power module 100 is electrified, external direct current can flow to the first conductive area 11 through the first summarizing conductive part 111, meanwhile, external direct current can flow to the third conductive area 13 through the second summarizing conductive part 1311 and the third summarizing conductive part 1331, direct current in the conductive areas can flow to the fourth conductive area 14 through the first power chip 2 and the second power chip 3, so that mutual inductance is formed in the half-bridge power module 100 when the half-bridge power module 100 is electrified, parasitic inductance of the whole module is effectively reduced, structural layout in the half-bridge power module 100 can be optimized, the integration level of the half-bridge power module 100 is improved, the problem of heat increment caused by compact layout of the power chips is avoided, and the heat dissipation of the half-bridge power module 100 is improved.

In some alternative embodiments, the plurality of second power chips 3 are symmetrical about the central axis of the substrate 1 in the second direction. For example, in the example of fig. 1, two of the six second power chips 3 are provided at the connection of the fourth conductive portion 131 and the fifth conductive portion 132, and the connection of the fifth conductive portion 132 and the sixth conductive portion 133, and the two second power chips 3 are aligned in the second direction, the remaining four second power chips 3 are provided at the fifth conductive portion 132, and the remaining four second power chips 3 are arranged at uniform intervals in the second direction. Thereby, the plurality of second power chips 3 can be regularly arranged in the third conductive region 13, and heat dissipation of the half-bridge power module 100 is ensured.

According to some embodiments of the present invention, the fourth conductive region 14 includes a seventh conductive portion 141 and a fourth aggregate conductive portion 142 connected to each other, the fourth aggregate conductive portion 142 is located between the seventh conductive portion 141 and the third edge 26, the seventh conductive portion 141 is electrically connected to the plurality of second power chips 3, and the fourth aggregate conductive portion 142 is configured to output an ac electrical signal. As shown in fig. 1, 2 and 5, the seventh conductive portion 141 and the fourth aggregate conductive portion 142 each extend along the second direction, and the plurality of second power chips 3 may be electrically connected to the seventh conductive portion 141 through a wire or a copper sheet. Accordingly, the distance between the seventh conductive part 141 and the third conductive region 13 is shortened, so that the length of the lead wire or the copper sheet can be shortened, and the cost of the half-bridge power module 100 can be reduced.

Further, both ends of the seventh conductive portion 141 have conductive branch portions 1411, and the conductive branch portions 1411 extend in a direction toward the third conductive region 13. By this arrangement, the distance between the conductive branch 1411 and the fifth conductive portion 132 is shortened, so that the distance between the conductive branch 1411 and the second power chip 3 can be shortened, and the length of the lead or copper sheet when the second power chip 3 is connected with the conductive branch 1411 can be shortened, thereby further reducing the cost of the half-bridge power module 100.

In some alternative embodiments, the length of the seventh conductive portion 141 is greater than the length of the fourth aggregate conductive portion 142 in the second direction. As shown in fig. 1 and 2, the seventh conductive part 141 is parallel to the fifth conductive part 132, by setting the length of the seventh conductive part 141 longer, the seventh conductive part 141 can cover all the second power chips 3 such that the distance between each second power chip 3 and the seventh conductive part 141 is equal, so that the length of the lead wire or the copper sheet when the second power chip 3 is connected to the seventh conductive part 141 can be shortened, the cost of the half-bridge power module 100 can be further reduced, and the lead wire or the copper sheet can be regularly arranged on the conductive layer 21.

According to some embodiments of the present invention, the first integrating conductive part 111 is connected to a first dc connection point 15 for switching in a dc electrical signal, the second integrating conductive part 1311 is connected to a second dc connection point 16 for switching in a dc electrical signal, the third integrating conductive part 1331 is connected to a third dc connection point 17 for switching in a dc electrical signal, and the fourth integrating conductive part 142 is connected to an ac terminal 18 for outputting an ac electrical signal. The first dc link 15, the second dc link 16 and the third dc link 17 are located on one side of the substrate 1 in the first direction and are arranged in the second direction. In practical applications, the half-bridge power module 100 may be connected to the outside through the dc connection point (i.e., the first dc connection point 15, the second dc connection point 16, and the third dc connection point 17) and the ac terminal 18, so as to receive the dc electrical signal sent from the outside and output the ac electrical signal to the outside, thereby implementing the function of electric energy conversion. It will be appreciated that in practical applications, the dc connection point and the ac terminal 18 are made of copper material with better electrical and thermal conductivity, so as to connect the half-bridge power module 100 with an external device.

The polarity of the dc signal connected to the second dc connection point 16 and the third dc connection point 17 is the same and opposite to the polarity of the dc signal connected to the first dc connection point 15, and the ac terminal 18 is located on the other side of the substrate 1 in the first direction. That is, if the dc signal connected to the second dc connection point 16 and the third dc connection point 17 is positive, the dc signal connected to the first dc connection point 15 is negative (not shown); alternatively, if the dc signal connected to the second dc connection point 16 and the third dc connection point 17 is negative, the dc signal connected to the first dc connection point 15 is positive (as shown in fig. 1).

According to some embodiments of the present invention, as shown in fig. 1, the half-bridge power module 100 further includes a first signal conductive region 19 and a second signal conductive region 20, the first signal conductive region 19 is located between the second conductive region 12 and the third conductive region 13, and the first signal conductive region 19 extends along the first direction. The second signal conductive region 20 is located between the third conductive region 13 and the fourth conductive region 14, and the second signal conductive region 20 extends in the second direction. For example, the first signal conductive area 19 and the second signal conductive area 20 may have a plurality of signal chips thereon, and the half-bridge power module 100 may be communicatively connected to an external device through the signal chips.

According to some embodiments of the present invention, the half-bridge power module 100 further includes an insulating cover mounted to the substrate 1 and covering the first conductive region 11, the second conductive region 12, the third conductive region 13, the fourth conductive region 14, the plurality of first power chips 2 and the plurality of second power chips 3 to function as an insulating and protecting device.

In some embodiments of the present invention, when in practical application, the half-bridge power module 100 needs to be packaged, for example, a plastic packaging manner may be adopted, that is, a process of injection molding a semi-finished product of the half-bridge power module 100 with plastic packaging, specifically, all structures in the half-bridge power module 100 shown in fig. 1 are mounted in a frame and are subjected to plastic packaging, so as to form a plastic package module. Alternatively, a potting method may be adopted, that is, a process of potting and molding a semi-finished product of the half-bridge power module 100 with an insulating material such as silicone gel, specifically, all structures in the half-bridge power module 100 shown in fig. 1 are installed in a frame, and the silicone gel is filled in the frame to form a potting module. It should be noted that, the half-bridge power module 100 may be applied to a half-bridge circuit or a three-phase full-bridge circuit, where a single half-bridge power module 100 forms a plastic package body for a plastic package manner, that is, a half-bridge circuit forms a plastic package body; for the potting mode, not only can a single half-bridge power module 100 form a potting body, namely, one half-bridge circuit forms a potting body, but also three half-bridge power modules 100 form a potting body, namely, three-phase full-bridge circuits formed by three half-bridge circuits form a potting body.

Alternatively, the power chips (i.e., the first power chip 2 and the second power chip 3) may use silicon or silicon carbide or other half-bridge materials as the substrate 1, for example, the power chips may use silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, metal-Oxide half-bridge field effect transistor), or may use devices in which IGBTs (Insulated Gate Bipolar Transistor, insulated gate bipolar transistors) are matched with FRDs (Fast Recovery Diode, fast recovery diodes), which is not limited.

According to the half-bridge power module 100 of the embodiment of the present invention, in practical application, the second dc connection point 16 and the third dc connection point 17 are high-potential dc terminals, the first dc connection point 15 is a low-potential dc terminal, after the half-bridge circuits of the half-bridge power module 100 are connected, the two high-potential dc terminals are connected to the ac terminals to form a first bridge arm of the half-bridge circuit, and the ac terminal 18 is connected to the low-potential dc terminal to form a second bridge arm of the half-bridge circuit, so that mutual inductance is formed between the circuit formed by the first bridge arm and the circuit formed by the second bridge arm in the half-bridge power module 100, thereby reducing parasitic inductance of the half-bridge power module 100.

As shown in fig. 5, a full-bridge power module 200 according to an embodiment of the second aspect of the present invention includes a heat dissipation plate 201 and a plurality of half-bridge power modules 100, where the half-bridge power modules 100 are the half-bridge power modules 100 according to the embodiment of the first aspect of the present invention.

The plurality of half-bridge power modules 100 are provided on the heat dissipation plate 201, and the plurality of half-bridge power modules 100 are spaced apart from each other along a length direction (e.g., a left-right direction in fig. 5) of the heat dissipation plate 201. For example, three half-bridge power modules 100 may be uniformly spaced along the length of the heat dissipation plate 201.

According to the full-bridge power module 200 of the embodiment of the invention, by adopting the half-bridge power module 100, parasitic inductance of the full-bridge power module 200 can be reduced, and the full-bridge power module 200 has good heat dissipation.

A motor controller (not shown) according to an embodiment of the third aspect of the present invention includes the half-bridge power module 100 according to the embodiment of the first aspect of the present invention or the full-bridge power module 200 according to the embodiment of the second aspect of the present invention.

According to the motor controller provided by the embodiment of the invention, by adopting the half-bridge power module 100 or the full-bridge power module 200, stray inductance in a loop can be effectively reduced, and the heat dissipation performance is better.

A vehicle (not shown) according to an embodiment of a fourth aspect of the present invention includes a motor and a motor controller, the motor controller being the motor controller according to the embodiment of the above-described third aspect of the present invention.

According to the vehicle provided by the embodiment of the invention, the motor controller is adopted, so that the inductance can be reduced, and the heat dissipation property can be improved.

Other components and operations of a vehicle according to embodiments of the invention are known to those of ordinary skill in the art and will not be described in detail herein.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A half-bridge power module, comprising:

a substrate having a first direction and a second direction orthogonal to each other;

the first conductive area, the second conductive area, the third conductive area and the fourth conductive area are arranged on the substrate at intervals along the first direction of the substrate, the second conductive area, the third conductive area and the fourth conductive area extend along the second direction, wherein the first conductive area and the third conductive area are used for being connected with direct-current electric signals, and the fourth conductive area is used for outputting alternating-current electric signals;

The first power chips are arranged in the second conductive area at intervals, and are respectively and electrically connected with the first conductive area and the second conductive area;

the second power chips are arranged in the third conductive area at intervals, and are respectively and electrically connected with the second conductive area, the third conductive area and the fourth conductive area.

2. The half-bridge power module of claim 1, wherein the first, second, and third conductive regions are on the same side of the first direction of the substrate and the fourth conductive region is on the other side of the first direction of the substrate.

3. The half-bridge power module of claim 2, wherein the first conductive region extends in the first direction, the second conductive region is located on an outer peripheral side of the first conductive region, and the third conductive region is located on an outer peripheral side of the second conductive region.

4. A half-bridge power module as claimed in claim 3, characterized in that the second conductive region is C-shaped in shape and the opening of the second conductive region is open towards the direction of the first conductive region, at least part of the first conductive region being located within the opening of the second conductive region.

5. The half-bridge power module of claim 4, wherein the second conductive region includes a first conductive portion, a second conductive portion, and a third conductive portion connected to each other, the first conductive portion and the third conductive portion being located at both ends of the first conductive region in the second direction, respectively, the first conductive portion and the third conductive portion extending in the first direction, the second conductive portion being connected between one ends of the first conductive portion and the third conductive portion adjacent to the third conductive region, the plurality of first power chips being disposed within the first conductive portion and the third conductive portion at intervals from each other.

6. The half-bridge power module of claim 5, wherein the plurality of first power chips are symmetrical about a central axis of the substrate along the second direction.

7. The half-bridge power module of claim 5, wherein the substrate has a first edge, a second edge, a third edge, and a fourth edge connected end to end in sequence, the first edge and the third edge being opposite each other in the first direction, the second edge and the fourth edge being opposite each other in the second direction, the first conductive portion being disposed adjacent the second edge.

8. The half-bridge power module of claim 7, wherein the first conductive portion is parallel to the second edge, the third conductive portion is disposed adjacent to the fourth edge, and the third conductive portion is parallel to the fourth edge, and the second conductive portion is parallel to the third edge.

9. The half-bridge power module of claim 8, wherein the width of the first conductive portion is equal to the width of the third conductive portion, the width of the first conductive portion being greater than the width of the second conductive portion.

10. The half-bridge power module of claim 8, wherein the third conductive region includes a fourth conductive portion, a fifth conductive portion and a sixth conductive portion connected to each other, the fourth conductive portion being located between the first conductive portion and the second edge, the fifth conductive portion being located between the second conductive portion and the fourth conductive region, the sixth conductive portion being located between the third conductive portion and the fourth edge, the plurality of second power chips being disposed within the fifth conductive portion at intervals from each other.

11. The half-bridge power module of claim 10, wherein the fourth and sixth conductive portions extend in the first direction, the fourth conductive portion is parallel to the second edge, the sixth conductive portion is parallel to the fourth edge, the fifth conductive portion extends in the second direction, and the fifth conductive portion is parallel to the third edge.

12. The half-bridge power module of claim 11, wherein the first conductive region has a first aggregate conductive portion extending in the second direction and for accessing the dc signal;

the fourth conductive part is provided with a second summarizing conductive part which extends along the second direction and is used for accessing the direct current signal;

the sixth conductive parts are provided with third summarizing conductive parts which extend along the second direction and are used for being connected with the direct current signals;

the first summarizing conductive parts, the second summarizing conductive parts and the third summarizing conductive parts are arranged at intervals along the second direction.

13. The half-bridge power module of claim 11, wherein the plurality of second power chips are symmetrical about a central axis of the substrate along the second direction.

14. The half-bridge power module of claim 12, wherein the fourth conductive region includes a seventh conductive portion and a fourth aggregate conductive portion connected to each other, the fourth aggregate conductive portion being located between the seventh conductive portion and the third edge, the seventh conductive portion being electrically connected to the plurality of second power chips, the fourth aggregate conductive portion being for outputting an alternating current signal.

15. The half-bridge power module of claim 14, wherein the seventh conductive portion has conductive branches at both ends, the conductive branches extending in a direction toward the third conductive region.

16. The half-bridge power module of claim 14, wherein a length of the seventh conductive portion in the second direction is greater than a length of the fourth aggregate conductive portion.

17. The half-bridge power module of claim 14, wherein the first summing junction is connected to a first dc connection point for accessing the dc signal, the second summing junction is connected to a second dc connection point for accessing the dc signal, the third summing junction is connected to a third dc connection point for accessing the dc signal, and the fourth summing junction has an ac terminal for outputting the ac signal;

the first direct current connection point, the second direct current connection point and the third direct current connection point are located on one side of the substrate in the first direction and are distributed along the second direction, the polarity of the direct current electric signal connected with the second direct current connection point is the same as that of the direct current electric signal connected with the third direct current connection point and opposite to that of the direct current electric signal connected with the first direct current connection point, and the alternating current terminal is located on the other side of the substrate in the first direction.

18. The half-bridge power module of any of claims 1-17, further comprising:

a first signal conductive region located between the second conductive region and the third conductive region, the first signal conductive region extending along the first direction;

a second signal conductive region located between the third conductive region and the fourth conductive region, and extending along the second direction.

19. The half-bridge power module of claim 1, further comprising:

the insulating cover body is arranged on the substrate and covers the first conductive area, the second conductive area, the third conductive area, the fourth conductive area, the plurality of first power chips and the plurality of second power chips.

20. A full bridge power module, comprising:

a heat dissipation plate;

a plurality of half-bridge power modules, a plurality of the half-bridge power modules are arranged on the heat dissipation plate, and the plurality of half-bridge power modules are spaced apart from each other along the length direction of the heat dissipation plate, and the half-bridge power modules are the half-bridge power modules according to any one of claims 1 to 19.

21. A motor controller comprising a half-bridge power module according to any one of claims 1-19 or a full-bridge power module according to claim 20.

22. A vehicle, characterized by comprising:

a motor;

a motor controller according to claim 21.