CN117375571A - Surface acoustic wave resonator device and method of forming the same - Google Patents
Surface acoustic wave resonator device and method of forming the same Download PDFInfo
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- CN117375571A CN117375571A CN202311235459.5A CN202311235459A CN117375571A CN 117375571 A CN117375571 A CN 117375571A CN 202311235459 A CN202311235459 A CN 202311235459A CN 117375571 A CN117375571 A CN 117375571A
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 44
- 239000007769 metal material Substances 0.000 claims abstract description 71
- 238000005530 etching Methods 0.000 claims abstract description 67
- 238000001312 dry etching Methods 0.000 claims abstract description 25
- 230000001590 oxidative effect Effects 0.000 claims abstract description 20
- 238000009835 boiling Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 201
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 27
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 16
- 239000010937 tungsten Substances 0.000 claims description 16
- 229910052721 tungsten Inorganic materials 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 6
- -1 aluminum magnesium copper Chemical compound 0.000 claims description 6
- 239000011241 protective layer Substances 0.000 claims description 6
- 229910018503 SF6 Inorganic materials 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- 239000006227 byproduct Substances 0.000 abstract 1
- 239000012790 adhesive layer Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
A surface acoustic wave resonator device and a method of forming the same, wherein the method of forming includes: acquiring a piezoelectric layer; forming a first metal material layer on the piezoelectric layer; and etching the first metal material layer by adopting a dry etching process to form an electrode structure, wherein oxidizing gas is added in the dry etching process, the oxidizing gas reacts with the side wall of the first metal material layer to form an adhesion layer in the etching process, the boiling point of the adhesion layer is higher than that of byproducts formed by etching the first metal material layer, and the adhesion layer is not volatilized in an etching cavity. Because the adhesion layer with higher boiling point can not volatilize in the etching chamber, the side wall exposed by the first metal material layer can be effectively protected, and the side wall exposed by the first metal material layer is prevented from being laterally etched by etching gas of a dry etching process, so that the vertical shape of the side wall of the electrode structure is improved, and the performance of a device is further effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a surface acoustic wave resonance device and a forming method thereof.
Background
A Radio Frequency (RF) front-end chip of a wireless communication device includes a power amplifier, an antenna switch, a Radio Frequency filter, a multiplexer, a low noise amplifier, and the like. Among them, the radio frequency filters include piezoelectric surface acoustic wave (SurfaceAcoustic Wave, SAW) filters, piezoelectric bulk acoustic wave (Bulk Acoustic Wave, BAW) filters, microelectromechanical system (Micro-Electro-Mechanical System, MEMS) filters, integrated passive device (Integrated PassiveDevices, IPD) filters, and the like.
The SAW resonator has a high quality factor (Q value), and is manufactured into an RF filter with low insertion loss (insertion loss) and high out-band rejection (out-band rejection), that is, a SAW filter, which is a mainstream RF filter currently used in wireless communication devices such as mobile phones and base stations. SAW resonators have a negative temperature coefficient of frequency (Temperature Coefficient of Frequency, TCF), i.e. the resonant frequency (resonant frequency) of the resonator decreases when the temperature increases and increases when the temperature decreases. The reliability and stability of SAW filters are reduced. In order to improve the characteristic of the resonance frequency drift of the SAW resonator with the operating temperature, a temperature compensation layer is added to the piezoelectric layer, and the temperature compensation layer has a temperature coefficient of frequency opposite to that of the piezoelectric layer. The combination of the two leads the temperature coefficient of the frequency of the whole resonator to trend to zero, thereby improving the reliability and the stability of the filter. Such a SAW resonator including a temperature compensation layer is called a temperature compensation SAW (Temperature Compensated SAW, TC-SAW) resonator, and a filter composed of the TC-SAW resonator is called a TC-SAW filter.
However, the surface acoustic wave resonator device still has many problems.
Disclosure of Invention
The invention solves the problem of providing a surface acoustic wave resonance device and a forming method thereof, so as to ensure the vertical appearance of an electrode structure and improve the performance of a device.
In order to solve the above problems, the present invention provides a method for forming a surface acoustic wave resonator device, including: acquiring a piezoelectric layer; forming a first metal material layer on the piezoelectric layer; etching the first metal material layer by adopting a dry etching process to form an electrode structure, wherein the electrode structure comprises: a first bus and a second bus arranged in parallel along a first direction, the first direction being parallel to the piezoelectric layer surface; the first bus is connected with the first electrode strips, the second direction is parallel to the surface of the piezoelectric layer, and the first direction is perpendicular to the second direction; the second bus is connected with the second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered mode, and the first electrode strips and the second electrode strips are partially overlapped along the second direction; and oxidizing gas is added in the dry etching process, and in the etching treatment process, the oxidizing gas reacts with the exposed side wall of the first metal material layer to form an adhesion layer, the boiling point of the adhesion layer is higher than that of other electrode structures formed by etching the first metal material layer, and the adhesion layer is not volatilized in the etching cavity.
Optionally, the electrode structure includes: a first metal layer formed by etching the first metal material layer; the adhesion layer is formed on the side wall of the first metal layer.
Optionally, the material of the first metal material layer includes: tungsten.
Optionally, the process parameters of the dry etching process include: the etching gas includes: SF (sulfur hexafluoride) 6 And N 2 The method comprises the steps of carrying out a first treatment on the surface of the The oxidizing gas includes: cl 2 And O 2 The method comprises the steps of carrying out a first treatment on the surface of the The Cl 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; the O is 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; bias power is 180 watts to 300 watts; the etch chamber pressure is 10 mtorr to 20 mtorr.
Optionally, the material of the adhesion layerThe material comprises: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
Optionally, before etching the first metal material layer, the method further includes: forming a second metal material layer on the first metal material layer, wherein the material density of the second metal material layer is smaller than that of the first metal material layer; and etching the second metal material layer until the top surface of the first metal material layer is exposed.
Optionally, the electrode structure further includes: a second metal layer formed by etching the second metal material layer; the second metal layer is formed on the first metal layer.
Optionally, the material of the second metal material layer includes: aluminum, aluminum copper or aluminum magnesium copper.
Optionally, after forming the electrode structure, the method further includes: forming a temperature compensation layer on the piezoelectric layer, wherein the temperature compensation layer covers the electrode structure; and forming a protective layer on the temperature compensation layer.
Correspondingly, the technical scheme of the invention also provides a surface acoustic wave resonance device, which comprises: a piezoelectric layer; an electrode structure on the piezoelectric layer, the electrode structure comprising: a first bus and a second bus arranged in parallel along a first direction, the first direction being parallel to the piezoelectric layer surface; the first bus is connected with the first electrode strips, the second direction is parallel to the surface of the piezoelectric layer, and the first direction is perpendicular to the second direction; the second bus is connected with the second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered mode, and the first electrode strips and the second electrode strips are partially overlapped along the second direction; and the adhesion layer is positioned on the side wall of the electrode structure and is not volatilized in the etching cavity.
Optionally, the electrode structure includes: a first metal layer; the adhesion layer is positioned on the side wall of the first metal layer.
Optionally, the material of the first metal layer includes: tungsten.
Optionally, the material of the adhesion layer includes: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
Optionally, the electrode structure further includes: and the second metal layer is positioned on the first metal layer.
Optionally, the material of the second metal layer includes: aluminum, aluminum copper or aluminum magnesium copper.
Optionally, the method further comprises: and the temperature compensation layer is positioned on the piezoelectric layer and covers the electrode structure.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the method for forming the surface acoustic wave resonator according to the technical scheme of the invention, the dry etching process is added with the oxidizing gas, the oxidizing gas can react with the exposed side wall of the first metal material layer to form the adhesion layer with a higher boiling point, and the adhesion layer with a higher boiling point cannot volatilize in the etching chamber, so that the exposed side wall of the first metal material layer can be effectively protected, the side wall of the first metal material layer is prevented from being laterally etched by the etching gas of the dry etching process, the vertical appearance of the side wall of the electrode structure is improved, and the device performance is effectively improved.
Further, the process parameters of the dry etching process include: the etching gas includes: SF (sulfur hexafluoride) 6 And N 2 The method comprises the steps of carrying out a first treatment on the surface of the The oxidizing gas includes: cl 2 And O 2 The method comprises the steps of carrying out a first treatment on the surface of the The Cl 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; the O is 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; bias power is 180 watts to 300 watts; the etch chamber pressure is 10 mtorr to 20 mtorr. When the Cl 2 And said O 2 The volume flow rate of the adhesive layer is less than 15 standard milliliters per minute, the adhesive layer formed by reaction is less, and the side wall exposed by etching cannot be effectively covered, therebyA certain lateral etching is also caused on the exposed side wall, so that the vertical appearance of the side wall of the electrode structure is influenced; when the Cl 2 And said O 2 When the volume flow rate is greater than 30 ml/min, a balance is achieved between the generation rate of the adhesion layer on the etching surface of the first metal material layer and the etching rate of the etching surface, so that the etching efficiency is low and even the etching cannot be performed.
In the surface acoustic wave resonator device of the technical scheme of the invention, the adhesive layer with higher boiling point is positioned on the side wall of the electrode structure, and the adhesive layer with higher boiling point can not volatilize in the etching cavity, so that the side wall of the electrode structure can be effectively protected, the side wall of the electrode structure is prevented from being laterally etched by etching gas of a dry etching process, the vertical appearance of the side wall of the electrode structure is improved, and the performance of a device is further effectively improved.
Drawings
Fig. 1 is a schematic structural view of a surface acoustic wave resonator device;
fig. 2 to 6 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to an embodiment of the present invention;
fig. 7 to 10 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to another embodiment of the present invention.
Detailed Description
As described in the background, there are still problems with the surface acoustic wave resonator device. The following will specifically explain.
Fig. 1 is a schematic structural view of a surface acoustic wave resonator device.
The temperature-compensated surface acoustic wave resonator device (i.e., TC-SAW resonator) is mainly composed of a piezoelectric layer 100, an electrode structure 101, a temperature compensation layer 102 and a protective layer 103, wherein the electrode structure 101 is generally composed of a single layer metal or multiple layers of metals, and tungsten is often used as the lowest metal layer of the electrode structure 101 because of its high density and stable chemical properties.
The line width of the electrode structure in the resonator is smaller, and the sidewall shape of the tungsten metal must be ensuredThe verticality of the feature, wet etching is generally isotropic etching, and further the vertical feature of the side wall of the tungsten metal cannot be ensured. SF is generally used when dry etching tungsten metal 6 And N 2 Because the chemical property of the metal tungsten is very stable, lateral etching of the metal tungsten is easy to occur in the etching process, and the vertical shape of the side wall of the metal tungsten cannot be ensured.
On the basis, the invention provides the surface acoustic wave resonance device and the forming method thereof, wherein oxidizing gas is added in the dry etching process, the oxidizing gas can react with the exposed side wall of the first metal material layer to form an adhesion layer with a higher boiling point, and the adhesion layer with a higher boiling point cannot volatilize in the etching chamber, so that the exposed side wall of the first metal material layer can be effectively protected, the side wall of the first metal material layer is prevented from being laterally etched by the etching gas in the dry etching process, the vertical shape of the side wall of the electrode structure is improved, and the device performance is effectively improved.
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than as described herein, and therefore the present invention is not limited to the specific embodiments disclosed below.
Fig. 2 to 6 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to an embodiment of the present invention.
Referring to fig. 2, a piezoelectric layer 200 is obtained.
The materials of the piezoelectric layer 200 include: lithium tantalate, lithium niobate, lead zirconate titanate, lead magnesium niobate-lead titanate, aluminum nitride alloy, gallium nitride, or zinc oxide.
In this embodiment, the piezoelectric layer 200 is made of 127 ° to 129 ° Y-X cut lithium niobate.
Referring to fig. 3, a first metal material layer 201 is formed on the piezoelectric layer 200.
In this embodiment, the material of the first metal material layer 201 is tungsten, and the tungsten is used as the bottom metal layer of the electrode structure formed later because of its high material density and stable chemical property.
Referring to fig. 4 and fig. 5, fig. 5 is a schematic cross-sectional view taken along line A-A in fig. 4, and a dry etching process is used to etch the first metal material layer 201 to form an electrode structure 202; wherein, an oxidizing gas is added in the dry etching process, and in the etching process, the oxidizing gas reacts with the exposed side wall of the first metal material layer 201 to form an adhesion layer 203, the boiling point of the adhesion layer 203 is higher than that of other electrode structures formed by etching the first metal material layer 201, and the adhesion layer 203 is not volatilized in the etching chamber.
In this embodiment, an oxidizing gas is added in the dry etching process, and the oxidizing gas can react with the exposed sidewall of the first metal material layer 201 to form the adhesion layer 203 with a higher boiling point, and since the adhesion layer 203 with a higher boiling point cannot volatilize in the etching chamber, the exposed sidewall of the first metal material layer 201 can be effectively protected, and the side etching of the exposed sidewall of the first metal material layer 201 by the etching gas in the dry etching process is prevented, so that the vertical shape of the sidewall of the electrode structure 202 is improved, and further the device performance is effectively improved.
In this embodiment, the process parameters of the dry etching process include: the etching gas includes: SF (sulfur hexafluoride) 6 And N 2 The method comprises the steps of carrying out a first treatment on the surface of the The oxidizing gas includes: cl 2 And O 2 The method comprises the steps of carrying out a first treatment on the surface of the The Cl 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; the O is 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; bias power is 180 watts to 300 watts; the etch chamber pressure is 10 mtorr to 20 mtorr. When the Cl 2 And said O 2 The adhesion layer 203 formed by the reaction is less and cannot be exposed to etching when the volume flow is less than 15 standard milliliters per minuteThe exposed side wall is effectively covered, and a certain lateral etching is further caused on the exposed side wall, so that the vertical appearance of the side wall of the electrode structure 202 is affected; when the Cl 2 And said O 2 When the volume flow rate is greater than 30 ml/min, a balance is achieved between the generation rate of the adhesion layer 203 on the etched surface of the first metal material layer 201 and the etching rate of the etched surface, which results in low etching efficiency and even impossible etching.
In this embodiment, the bias power is 180 watts to 300 watts, which can increase the ion bombardment energy, so that the etching rate on the etching surface of the first metal material layer 201 can be greater than the generation rate of the adhesion layer 203, thereby ensuring the etching; the pressure of the etching cavity is 10 millitorr to 20 millitorr, so that the average free path and the directionality of particles can be improved, the accuracy of ion bombardment is further improved, and an ideal side wall vertical morphology is formed.
In the present embodiment, cl in the oxidizing gas 2 The reaction with the metal tungsten mainly generates the adhesion layer, thereby playing the role of passivation protection, and oxidizing O in the gas 2 Mainly plays a role in catalyzing reaction.
In this embodiment, since the material of the first metal material layer 201 is tungsten, the material of the corresponding adhesion layer 203 includes: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
With continued reference to fig. 4, in this embodiment, the electrode structure 202 includes: a first bus 2021 and a second bus 2022 arranged in parallel along a first direction X, the first direction X being parallel to the surface of the piezoelectric layer 200; a plurality of first electrode strips 2023 arranged in parallel along a second direction Y, wherein the first bus 2021 is connected to the plurality of first electrode strips 2023, the second direction Y is parallel to the surface of the piezoelectric layer 200, and the first direction X is perpendicular to the second direction Y; the second bus 2022 is connected to the plurality of second electrode strips 2024, the first electrode strips 2023 and the second electrode strips 2024 are staggered, and the first electrode strips 2023 and the second electrode strips 2024 are partially overlapped along the second direction Y.
With continued reference to fig. 5, in this embodiment, the electrode structure 202 includes: a first metal layer 202a formed by etching the first metal material layer 201; the adhesion layer 203 is formed on the sidewall of the first metal layer 202 a.
Referring to fig. 6, the view directions of fig. 6 and fig. 5 are identical, after the electrode structure 202 is formed, a temperature compensation layer 204 is formed on the piezoelectric layer 200, and the temperature compensation layer 204 covers the electrode structure 202; a protective layer 205 is formed on the temperature compensation layer 204.
In this embodiment, the temperature compensation layer 204 and the piezoelectric layer 200 have opposite temperature frequency shift characteristics, and the frequency temperature coefficient (TemperatureCoefficient of Frequency, TCF) can be adjusted to be 0ppm/°c, so that the characteristic that the operating frequency of the surface acoustic wave resonator shifts with the operating temperature is improved, and the frequency-temperature stability is higher. A surface acoustic wave resonator device including a temperature compensation layer is called a temperature compensated surface acoustic wave resonator device (i.e., TC-SAW resonator).
In this embodiment, the materials of the protective layer 205 include: one or more of silicon nitride, aluminum nitride, silicon oxynitride, aluminum oxide, and silicon carbide.
Correspondingly, in the embodiment of the present invention, further a surface acoustic wave resonator is provided, please continue to refer to fig. 4 and fig. 6, which includes: a piezoelectric layer 200; an electrode structure 202 located on the piezoelectric layer 200, the electrode structure 202 comprising: a first bus 2021 and a second bus 2022 arranged in parallel along a first direction X, the first direction X being parallel to the surface of the piezoelectric layer 200; a plurality of first electrode strips 2023 arranged in parallel along a second direction Y, wherein the second direction Y is parallel to the surface of the piezoelectric layer 200, the first bus 2021 is connected to the plurality of first electrode strips 2023, and the first direction X is perpendicular to the second direction Y; a plurality of second electrode strips 2024 arranged in parallel along the second direction Y, the second bus 2022 connects a plurality of second electrode strips 2024, the first electrode strips 2023 and the second electrode strips 2024 are staggered, and the first electrode strips 2023 and the second electrode strips 2024 are partially overlapped along the second direction Y; and the adhesion layer 203 is positioned on the side wall of the electrode structure 202, and the adhesion layer 203 is not volatilized in the etching chamber.
In this embodiment, the adhesion layer 203 with a higher boiling point is located on the sidewall of the electrode structure 202, and since the adhesion layer 203 with a higher boiling point cannot volatilize in the etching chamber, the sidewall of the electrode structure 202 can be effectively protected, and the sidewall of the electrode structure 202 is prevented from being laterally etched by etching gas in the dry etching process, so that the vertical shape of the sidewall of the electrode structure 202 is improved, and the performance of the device is further effectively improved.
In this embodiment, the electrode structure 202 includes: a first metal layer 202a; the adhesion layer 203 is located on a sidewall of the first metal layer 202 a.
In this embodiment, the material of the first metal layer 202a is tungsten.
In this embodiment, the material of the adhesion layer 203 includes: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
Fig. 7 to 10 are schematic structural views of steps of a method for forming a surface acoustic wave resonator device according to another embodiment of the present invention.
In this embodiment, a method for forming a surface acoustic wave resonator device is described based on the above embodiment (fig. 3), and the difference from the above embodiment is that: the electrode structure 202 further includes a second metal layer. The following will explain the embodiments with reference to the drawings.
Referring to fig. 7, a second metal material layer 301 is formed on the first metal material layer 201, and the material density of the second metal material layer 301 is smaller than that of the first metal material layer 201.
In this embodiment, the materials of the second metal material layer 301 include: aluminum, aluminum copper or aluminum magnesium copper.
Referring to fig. 8, the second metal material layer 301 is etched until the top surface of the first metal material layer 201 is exposed.
In this embodiment, the method for performing etching treatment on the second metal material layer 301 includes: forming a photoresist layer (not shown) on the second metal material layer 301, the photoresist layer exposing a portion of a top surface of the second metal material layer 301; the second metal material layer 301 is etched using the photoresist layer as a mask until the top surface of the first metal material layer 201 is exposed.
In this embodiment, the electrode structure 202 further includes: and a second metal layer 302a formed by etching the second metal material layer 301.
Referring to fig. 9, after the second metal material layer 301 is etched, a dry etching process is used to etch the first metal material layer 201 to form an electrode structure.
In this embodiment, the second metal layer 302a is formed on the first metal layer 202 a.
In this embodiment, the process parameters of the dry etching process, the technical effects caused by the dry etching process after etching the first metal material layer 201, the specific structure of the electrode structure 202, and the like are specifically described with reference to fig. 4 to 5 and related descriptions, and will not be described in detail herein.
Referring to fig. 10, after the electrode structure 202 is formed, a temperature compensation layer 204 is formed on the piezoelectric layer 200, and the temperature compensation layer 204 covers the electrode structure 202; a protective layer 205 is formed on the temperature compensation layer 204.
In this embodiment, the technical effects generated by the temperature compensation layer 204, and the materials of the temperature compensation layer 204 and the protection layer 205 are specifically described with reference to fig. 6 and the related description, and will not be described herein again.
Correspondingly, in the embodiment of the present invention, a surface acoustic wave resonator is further provided, please continue to refer to fig. 10, and the rest of the structures are the same as the surface acoustic wave resonator described in the above embodiment, except that: the electrode structure 202 further comprises: a second metal layer 302a, the second metal layer 302a being located on the first metal layer 202 a.
In this embodiment, the materials of the second metal layer 302a include: aluminum, aluminum copper or aluminum magnesium copper.
It should be understood that the examples and embodiments herein are illustrative only and that various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the invention as defined by the application and the appended claims.
Claims (16)
1. A method of forming a surface acoustic wave resonator device, comprising:
acquiring a piezoelectric layer;
forming a first metal material layer on the piezoelectric layer;
etching the first metal material layer by adopting a dry etching process to form an electrode structure, wherein the electrode structure comprises:
a first bus and a second bus arranged in parallel along a first direction, the first direction being parallel to the piezoelectric layer surface;
the first bus is connected with the first electrode strips, the second direction is parallel to the surface of the piezoelectric layer, and the first direction is perpendicular to the second direction;
the second bus is connected with the second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered mode, and the first electrode strips and the second electrode strips are partially overlapped along the second direction; wherein,
and oxidizing gas is added in the dry etching process, and in the etching treatment process, the oxidizing gas reacts with the side wall of the first metal material layer exposed by etching to form an adhesion layer, the boiling point of the adhesion layer is higher than that of other electrode structures formed by etching the first metal material layer, and the adhesion layer is not volatilized in the etching cavity.
2. The method of forming a surface acoustic wave resonator device of claim 1, wherein the electrode structure comprises: a first metal layer formed by etching the first metal material layer; the adhesion layer is formed on the side wall of the first metal layer.
3. The method of forming a surface acoustic wave resonator device of claim 1, wherein the material of the first metal material layer comprises: tungsten.
4. The method of forming a surface acoustic wave resonator device of claim 3, wherein the process parameters of the dry etching process include: the etching gas includes: SF (sulfur hexafluoride) 6 And N 2 The method comprises the steps of carrying out a first treatment on the surface of the The oxidizing gas includes:
Cl 2 and O 2 The method comprises the steps of carrying out a first treatment on the surface of the The Cl 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; the O is 2 The volume flow of the catalyst is 15 standard condition milliliters per minute to 30 standard condition milliliters per minute; bias power is 180 watts to 300 watts; the etch chamber pressure is 10 mtorr to 20 mtorr.
5. The method of forming a surface acoustic wave resonator device of claim 4 wherein the material of the adhesion layer comprises: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
6. The method of forming a surface acoustic wave resonator device according to claim 2, further comprising, before etching the first metal material layer: forming a second metal material layer on the first metal material layer, wherein the material density of the second metal material layer is smaller than that of the first metal material layer; and etching the second metal material layer until the top surface of the first metal material layer is exposed.
7. The method of forming a surface acoustic wave resonator device of claim 6 wherein the electrode structure further comprises: a second metal layer formed by etching the second metal material layer; the second metal layer is formed on the first metal layer.
8. The method of forming a surface acoustic wave resonator device of claim 6 wherein the material of the second metal material layer comprises: aluminum, aluminum copper or aluminum magnesium copper.
9. The method of forming a surface acoustic wave resonator device of claim 1, further comprising, after forming the electrode structure: forming a temperature compensation layer on the piezoelectric layer, wherein the temperature compensation layer covers the electrode structure; and forming a protective layer on the temperature compensation layer.
10. A surface acoustic wave resonator device comprising:
a piezoelectric layer;
an electrode structure on the piezoelectric layer, the electrode structure comprising:
a first bus and a second bus arranged in parallel along a first direction, the first direction being parallel to the piezoelectric layer surface;
the first bus is connected with the first electrode strips, the second direction is parallel to the surface of the piezoelectric layer, and the first direction is perpendicular to the second direction;
the second bus is connected with the second electrode strips, the first electrode strips and the second electrode strips are arranged in a staggered mode, and the first electrode strips and the second electrode strips are partially overlapped along the second direction;
and the adhesion layer is positioned on the side wall of the electrode structure and is not volatilized in the etching cavity.
11. The surface acoustic wave resonator apparatus of claim 10, wherein the electrode structure comprises: a first metal layer; the adhesion layer is positioned on the side wall of the first metal layer.
12. The surface acoustic wave resonator apparatus of claim 11, wherein the material of the first metal layer comprises: tungsten.
13. The surface acoustic wave resonator apparatus of claim 12, wherein the material of the adhesion layer comprises: WCl (Wireless communications equipment) 6 、WCl 5 And WOCL 4 One or more of the following.
14. The surface acoustic wave resonator apparatus of claim 11, wherein the electrode structure further comprises: and the second metal layer is positioned on the first metal layer.
15. The surface acoustic wave resonator apparatus of claim 14, wherein the material of the second metal layer comprises: aluminum, aluminum copper or aluminum magnesium copper.
16. The surface acoustic wave resonator apparatus of claim 10, further comprising: and the temperature compensation layer is positioned on the piezoelectric layer and covers the electrode structure.
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| CN202311235459.5A CN117375571A (en) | 2023-09-22 | 2023-09-22 | Surface acoustic wave resonator device and method of forming the same |
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| CN202311235459.5A CN117375571A (en) | 2023-09-22 | 2023-09-22 | Surface acoustic wave resonator device and method of forming the same |
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