CN117374132A - Method for manufacturing photoelectric sensor and method for forming double-layer metal structure - Google Patents
Method for manufacturing photoelectric sensor and method for forming double-layer metal structure Download PDFInfo
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- CN117374132A CN117374132A CN202210756732.8A CN202210756732A CN117374132A CN 117374132 A CN117374132 A CN 117374132A CN 202210756732 A CN202210756732 A CN 202210756732A CN 117374132 A CN117374132 A CN 117374132A
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- 239000002184 metal Substances 0.000 title claims abstract description 181
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 181
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000010410 layer Substances 0.000 claims abstract description 300
- 239000011241 protective layer Substances 0.000 claims abstract description 90
- 230000008719 thickening Effects 0.000 claims abstract description 52
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 25
- 230000000149 penetrating effect Effects 0.000 claims abstract description 14
- 230000008020 evaporation Effects 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 11
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a manufacturing method of a photoelectric sensor and a forming method of a double-layer metal structure, wherein the manufacturing method comprises the following steps: forming a first metal layer including a deck region and a leg region; forming a first protective layer on the first metal layer except the bridge deck area; forming a photoresist layer on the bridge deck area and the first protective layer; photoetching to remove photoresist on the bridge floor area; forming a metal thickening layer on the bridge deck area through evaporation; removing the photoresist layer; forming a second protective layer on the metal thickening layer and the first protective layer; forming a first sacrificial layer with a first through hole on the second protective layer; forming a first part on the first sacrificial layer; forming a second through hole penetrating the second protective layer on the metal thickening layer; forming a second metal layer in electrical connection with the first component and the first metal layer; releasing the first sacrificial layer. The invention can make the metal layer of the bridge leg area very thin, and the thin bridge leg area can reduce the heat loss in the heat conduction process, thereby improving the product performance.
Description
Technical Field
The invention relates to a micro-motor system, in particular to a manufacturing method of a photoelectric sensor and a forming method of a double-layer metal structure.
Background
An exemplary MEMS photosensor has a bridge leg and a support mesa. To improve product performance, a Critical Dimension (CD) approach to compressing the bridge legs may be used. However, there is a limit to the reduction of critical dimensions, which may be limited by factors such as the performance of the lithographic apparatus.
Disclosure of Invention
Based on this, it is necessary to provide a method for manufacturing a photoelectric sensor capable of improving the performance of a product.
A method of manufacturing a photoelectric sensor, comprising: forming a first metal layer, wherein the first metal layer comprises a bridge deck area and a bridge leg area; forming a first protective layer on the first metal layer, and leaving the upper surface of the deck area uncovered by the first protective layer; forming a photoresist layer on the upper surface of the bridge deck area and the first protective layer; photoetching to remove photoresist on the upper surface of the bridge deck area; forming a metal thickening layer on the upper surface of the bridge deck area through evaporation; the material of the metal thickening layer is the same as that of the first metal layer; removing the photoresist layer; forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer; forming a first sacrificial layer on the second protective layer, and leaving at least part of the second protective layer on the bridge deck area uncovered by the first sacrificial layer, thereby forming a first through hole in the first sacrificial layer; forming a first component on the first sacrificial layer; forming a second through hole penetrating the second protective layer on the metal thickening layer; forming a second metal layer, wherein the second metal layer is electrically connected with the first component and is electrically connected with the first metal layer through the second through hole; releasing the first sacrificial layer.
According to the manufacturing method of the photoelectric sensor, the metal layer of the bridge deck area is thickened, so that the problem that when a through hole penetrating the second protective layer is formed, a process window is small (the first metal layer is thin and is easy to be carved through) due to the fact that the first metal layer of the bridge deck area is too thin is avoided, and mass production is difficult. Therefore, the first metal layer can be made thin, and the thin bridge leg area can reduce heat loss in the heat conduction process, so that the product performance is improved. In addition, the formation of the metal thickening layer on the bridge deck area adopts a post-photoetching evaporation process, so that the uniformity of the film layer on the bridge leg area is not influenced, the influence of the metal thickening process on products is reduced, the possibility of occurrence of new abnormal increase caused by the metal thickening process is reduced, and the influence on the position of the bridge leg area for determining the performance of the products is avoided.
In one embodiment, the first component includes a heat sensitive layer.
In one embodiment, the method further comprises: obtaining a substrate, wherein a circuit layer is formed on the substrate; forming a second sacrificial layer having a third through hole on the substrate; wherein the step of forming a first metal layer includes forming the first metal layer on the second sacrificial layer.
In one embodiment, after the step of forming the second sacrificial layer having the third through hole on the substrate, the method further includes: depositing a third protective layer on the second sacrificial layer and in the third through hole; etching to remove the third protective layer at the bottom of the third through hole; the step of forming the first metal layer comprises forming the first metal layer on the third protection layer and in the third through hole, wherein the first metal layer at the bottom of the third through hole is electrically connected with a circuit in the circuit layer, and the bridge leg region is electrically connected with the circuit through the first metal layer on the side wall of the third through hole.
In one embodiment, in the step of obtaining the substrate, a metal reflective layer is further formed on the upper surface of the substrate.
In one embodiment, after the step of forming a first sacrificial layer on the second protective layer and before the step of forming a first component on the first sacrificial layer, the method further includes a step of forming a support layer on the first sacrificial layer and on a sidewall of the first via.
In one embodiment, before the step of forming the first sacrificial layer on the second protective layer, the method further includes a step of patterning the second protective layer, the first metal layer and the third protective layer on the second sacrificial layer to form a first release hole exposing the second sacrificial layer; after the step of forming the second metal layer and before the step of releasing the first sacrificial layer, the method further comprises the step of patterning the supporting layer to form a second release hole; the step of releasing the first sacrificial layer includes causing etchant to release the first sacrificial layer through the second release hole, and further includes causing the etchant to release the second sacrificial layer through the first release hole.
In one embodiment, the material of the first metal layer includes metallic titanium.
In one embodiment, the material of the first protection layer and the second protection layer includes silicon nitride.
In one embodiment, the materials of the first protection layer and the second protection layer include silicon nitride.
In one embodiment, the material of the support layer includes silicon nitride.
In one embodiment, the material of the supporting layer includes silicon nitride.
In one embodiment, after the step of forming the second via hole penetrating the second protective layer on the metal thickening layer and before the step of forming the second metal layer, the method further includes a step of back-sputtering the metal thickening layer.
It is also necessary to provide a method of forming a dual layer metal structure.
A method of forming a bilayer metal structure comprising: forming a first metal layer, wherein the first metal layer comprises a first area and a second area; forming a first protective layer on the first metal layer, and leaving the upper surface of the first region uncovered by the first protective layer; forming a photoresist layer on the upper surface of the first region and the protective layer; removing photoresist on the upper surface of the first region by photoetching; forming a metal thickening layer on the upper surface of the first region through evaporation; the material of the metal thickening layer is the same as that of the first metal layer; removing the photoresist layer; forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer; forming a through hole penetrating the second protective layer on the metal thickening layer; and forming a second metal layer, wherein the second metal layer is electrically connected with the first metal layer through the through hole.
According to the method for forming the double-layer metal structure, the metal layer of the first area is thickened, so that the problem that when a through hole penetrating the second protective layer is formed, a process window is small (the first metal layer is thin and is easy to be carved through) due to the fact that the first metal layer of the first area is too thin is avoided, and mass production is difficult. In addition, the formation of the metal thickening layer adopts a post-photoetching evaporation process, so that the uniformity of the film layer on the second area is not influenced, the influence of the metal thickening process on a product is reduced, and the possibility of occurrence of new abnormal increase caused by the metal thickening process is reduced.
In one embodiment, after the step of forming the through hole penetrating the second protective layer on the metal thickening layer and before the step of forming the second metal layer, the method further includes a step of back-sputtering the metal thickening layer.
In one embodiment, the material of the first metal layer includes metallic titanium.
In one embodiment, the materials of the first protection layer and the second protection layer include silicon nitride.
Drawings
For a better description and illustration of embodiments and/or examples of those inventions disclosed herein, reference may be made to one or more of the accompanying drawings. Additional details or examples used to describe the drawings should not be construed as limiting the scope of the disclosed invention, the presently described embodiments and/or examples, and any of the presently understood modes of carrying out the invention.
FIG. 1 is a flow chart of a method of fabricating a photosensor in an embodiment;
FIGS. 2a to 2h are schematic cross-sectional structures of the photoelectric sensor in the course of manufacturing the photoelectric sensor by using the manufacturing method of the photoelectric sensor shown in FIG. 1;
fig. 3 is a top view of a bridge deck and bridge legs in one embodiment.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatially relative terms, such as "under," "below," "beneath," "under," "above," "over," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. In this way, variations from the illustrated shape due to, for example, manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be limited to the particular shapes of the regions illustrated herein, but rather include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle typically has rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted regions. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface over which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.
An exemplary 8 inch wafer photovoltaic product process structure has two layers, a first layer forming a bridge leg and a second layer of support mesas, which can be compressed to enhance product performance by compressing the bridge leg CD (critical dimension). An exemplary product CD has been made to 0.25 microns, and correspondingly the capacity of the lithography machine provided for an 8 inch product line is only 0.25 microns, so that if the CD continues to be compressed, subsequent mass production will not be possible. The inventors consider reducing the thickness of the metal layer (Ti) of the bridge leg to reduce the loss of heat during heat conduction, resulting in improved product performance. However, the bridge deck is consistent with the film layer of the bridge leg, so thinning Ti can lead to thinning Ti at the bridge deck position, and the residual amount of Ti after etching the through holes of the second layer is insufficient to support the back splash amount of the second layer Ti during sputtering.
The present application provides a method for manufacturing a photoelectric sensor capable of improving product performance, and fig. 1 is a flowchart of a method for manufacturing a photoelectric sensor in an embodiment, including the following steps:
and S110, forming a first metal layer, wherein the first metal layer comprises a bridge deck area and a bridge leg area.
In one embodiment of the present application, step S112 is preceded by a step of obtaining the substrate 10 and a step of forming the second sacrificial layer 20 having the third through hole 11 on the substrate 10. In the embodiment shown in fig. 2a, a circuit layer (not shown in fig. 2 a) is formed on the obtained substrate 10, which circuit layer may comprise a readout circuit. In the embodiment shown in fig. 2a, a metal reflective layer 12 is also formed on the substrate 10, as well as a contact metal 14. In one embodiment of the present application, the second sacrificial layer 20 is formed on the substrate 10, the metal reflective layer 12, and the contact metal 14 by a deposition process, and the material of the second sacrificial layer 20 may be silicon oxide, such as silicon dioxide. The second sacrificial layer 20 is then patterned to form third vias 11, which third vias 11 may be formed in particular by photolithography and etching the second sacrificial layer 20 (two third vias 11 are shown in fig. 2 a).
A third protective layer 32 may also be deposited on the second sacrificial layer 20 and in the third via 11 before forming the first metal layer 34, see fig. 2b. The third protective layer 32 may be an insulating medium such as silicon nitride, and may be silicon nitride in particular. Thereafter, a first metal layer 34 is formed on the third protective layer 32 and in the third via 11. The first metal layer 34 at the bottom of the third via 11 is in direct contact with the contact metal 14, and is electrically connected to the circuit in the circuit layer through the contact metal 14, and the bridge leg region of the first metal layer 34 is electrically connected to the contact metal 14 and the circuit in the circuit layer through the first metal layer 34 on the sidewall of the third via 11.
And S112, forming a first protective layer on the first metal layer, and enabling the upper surface of the bridge deck area not to be covered by the first protective layer.
The material of the first protection layer may be the same as that of the third protection layer 32, and the third protection layer 32, the first metal layer 34 and the first protection layer form a dielectric-metal-dielectric composite film structure. In one embodiment of the present application, a first protective layer is deposited on first metal layer 34, and then the first protective layer is removed from the bridge floor area by a photolithography and etching process to expose the bridge floor area.
And S114, forming a photoresist layer on the upper surface of the bridge deck area and the first protective layer.
The surface of the semiconductor structure formed in step S112 is coated with a photoresist.
And S116, photoetching to remove the photoresist on the upper surface of the bridge deck area.
By exposure and development, only the photoresist of the bridge floor area is removed, thereby exposing the bridge floor area. The photolithography used in step S116 may be the same as the photolithography used in patterning the first protective layer in step S112.
And S118, forming a metal thickening layer on the upper surface of the bridge deck area through evaporation.
The bridge floor area not protected by the photoresist is thickened with metal by a metal vapor deposition process, and the metal thickening layer is the same material as the first metal layer 34. In one embodiment of the present application, first metal layer 34 and the metal thickening layer are both titanium metal. In one embodiment of the present application, the first metal layer 34 formed in step S110 has a thickness ofThe use of a thin metal layer in the bridge leg region may enhance product performance.
S120, removing the photoresist layer.
The photoresist formed in step S114 is removed entirely.
And S122, forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer.
And depositing a second protection layer on the surface of the semiconductor structure formed in the step S120, wherein the second protection layer is the same as the first protection layer in material. Thus, in the bridge leg area, the thickness of the protective layer on the upper surface is the sum of the thickness of the first protective layer and the thickness of the second protective layer; in the bridge deck area, the thickness of the protective layer on the upper surface is the thickness of the second protective layer. Thus, the thickness of the first protective layer can be designed according to the thickness of the protective layer required for the bridge leg region and the thickness of the protective layer required for the bridge deck region. For example, the upper surface of the bridge leg region is requiredA thick protective layer, the upper surface of the bridge deck area is required +.>A thick protective layer is formed in step S112>A thick first protective layer, step S122 is formed +.>A thick second protective layer, the thickness of the protective layer on the upper surface of the bridge leg area is
In an embodiment of the present application, step S122 further includes a step of patterning the second protection layer, the first metal layer 34 and the third protection layer on the second sacrificial layer 20 to form the first release hole 31 exposing the second sacrificial layer 20. The first release holes 31 may be formed by photolithography and etching. After patterning, the medium-metal-medium composite film structure at the bridge leg region constitutes the bridge legs 30, and the medium-metal-medium composite film structure at the bridge floor region constitutes the bridge floor 40, see fig. 2c. Fig. 3 is a top view of bridge deck 40 and bridge leg 30 in one embodiment.
S124, forming a first sacrificial layer on the second protective layer, wherein a first through hole is formed in the first sacrificial layer.
In one embodiment of the present application, a sacrificial layer material is deposited on the semiconductor structure after the formation of the first release holes 31, and the deposited sacrificial layer material is patterned to form the first sacrificial layer 50 and the first via holes 51, see fig. 2d. In one embodiment of the present application, the sacrificial layer material is silicon oxide, such as silicon dioxide.
S126, forming a first component on the first sacrificial layer.
In the embodiment shown in fig. 2e, the first component comprises a heat sensitive layer 60. Before forming the thermosensitive layer 60, a step of forming a support layer 52 on the first sacrificial layer 50 and the side wall of the first through hole 51 is further included. In one embodiment of the present application, the material of the supporting layer 52 is an insulating medium, such as silicon nitride, and may be silicon nitride.
And S128, forming a second through hole penetrating the second protective layer on the metal thickening layer.
Referring to fig. 2f, a second via 53 is etched.
S130, forming a second metal layer electrically connected with the first component and the first metal layer.
In one embodiment of the present application, the step of back-sputtering the metal thickening layer of deck 40 is also included after forming second via 53 and before forming second metal layer 62. The purpose of back sputtering is to remove the natural oxide layer on the surface of the metal thickening layer, so that the contact between two layers of metals is more compact, and the contact resistance between the two layers of metals is reduced. Etching the second through hole 53 and back-sputtering the metal thickening layer both result in the metal layer of the deck 40 being removed by a certain thickness, and thus if the metal layer of the deck 40 is too thin, defects in the product may occur. Thus, the formation of the metal thickening layer may allow the metal layer of bridge deck 40 to be sufficiently thin, thereby increasing the process window for etching second via 53 and back-sputtering bridge deck 40.
In the embodiment shown in fig. 2g, the second metal layer 62 is electrically connected to the heat sensitive layer 60, and is electrically connected to the first metal layer 34 (not shown in fig. 2 g) through the second via 53 (not shown in fig. 2 g).
S132, releasing the first sacrificial layer.
In the embodiment shown in fig. 2g, the support layer 52 is first patterned (e.g., by photolithography and etching) to form the second release holes 61. The etchant etches away the first sacrificial layer 50 through the second release holes 61 during release and continues to etch the second sacrificial layer 20 through the first release holes 31, resulting in the structure shown in fig. 2 h.
In the above-mentioned manufacturing method of the photoelectric sensor, the metal layer of the bridge floor area is thickened, so that the problem that the process window is small (the first metal layer 34 is thin and is easy to be carved through) and difficult mass production caused by the fact that the first metal layer 34 of the bridge floor area is too thin when the through hole (namely, the second through hole 53) for penetrating the second protection layer is formed is avoided. The first metal layer 34 can be made thin, and the thin bridge leg region can reduce heat loss during heat conduction, so that the product performance is improved. In addition, the formation of the metal thickening layer on the bridge deck area adopts a post-photoetching evaporation process, so that the uniformity of the first protective layer on the bridge leg area is not affected (in contrast, if the steps S114 and S116 are omitted, a metal layer is directly sputtered, and then the metal layer outside the bridge deck area is removed by back etching, the back etching can cause the damage of the first protective layer of the bridge leg area, so that the uniformity of the first protective layer of the bridge leg area is affected), the influence of a metal thickening process on a product is reduced, the possibility that new addition abnormality occurs due to the metal thickening process is reduced, and the influence on the position of the bridge leg area for determining the product performance is avoided.
The application correspondingly provides a method for forming a double-layer metal structure, which comprises the following steps:
forming a first metal layer, wherein the first metal layer comprises a first area and a second area;
forming a first protective layer on the first metal layer, and leaving the upper surface of the first region uncovered by the first protective layer;
forming a photoresist layer on the upper surface of the first region and the protective layer;
removing photoresist on the upper surface of the first region by photoetching;
forming a metal thickening layer on the upper surface of the first region through evaporation; the material of the metal thickening layer is the same as that of the first metal layer;
removing the photoresist layer;
forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer;
forming a through hole penetrating the second protective layer on the metal thickening layer;
and forming a second metal layer, wherein the second metal layer is electrically connected with the first metal layer through the through hole.
According to the method for forming the double-layer metal structure, the metal layer of the first area is thickened, so that the problem that when a through hole penetrating the second protective layer is formed, a process window is small (the first metal layer is thin and is easy to be carved through) due to the fact that the first metal layer of the first area is too thin is avoided, and mass production is difficult. In addition, the formation of the metal thickening layer adopts a post-photoetching evaporation process, so that the uniformity of the film layer on the second area is not influenced, the influence of the metal thickening process on a product is reduced, and the possibility of occurrence of new abnormal increase caused by the metal thickening process is reduced.
In one embodiment of the present application, after the step of forming the through hole penetrating the second protective layer on the metal thickening layer and before the step of forming the second metal layer, the method further includes a step of back-sputtering the metal thickening layer.
In one embodiment of the present application, the material of the first metal layer includes metallic titanium.
In an embodiment of the present application, the material of the first protection layer and the second protection layer includes a nitride of silicon, such as silicon nitride.
It should be understood that, although the steps in the flowcharts of this application are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in the flowcharts of this application may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the execution of the steps or stages is not necessarily sequential, but may be performed in turn or alternately with at least a portion of the steps or stages in other steps or others.
In the description of the present specification, reference to the terms "some embodiments," "other embodiments," "desired embodiments," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.
The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (10)
1. A method of manufacturing a photoelectric sensor, comprising:
forming a first metal layer, wherein the first metal layer comprises a bridge deck area and a bridge leg area;
forming a first protective layer on the first metal layer, and leaving the upper surface of the deck area uncovered by the first protective layer;
forming a photoresist layer on the upper surface of the bridge deck area and the first protective layer;
photoetching to remove the photoresist layer on the upper surface of the bridge deck area;
forming a metal thickening layer on the upper surface of the bridge deck area through evaporation; the material of the metal thickening layer is the same as that of the first metal layer;
removing the residual photoresist layer;
forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer;
forming a first sacrificial layer on the second protective layer, and leaving at least part of the second protective layer on the bridge deck area uncovered by the first sacrificial layer, thereby forming a first through hole in the first sacrificial layer;
forming a first component on the first sacrificial layer;
forming a second through hole penetrating the second protective layer on the metal thickening layer;
forming a second metal layer, wherein the second metal layer is electrically connected with the first component and is electrically connected with the first metal layer through the second through hole;
releasing the first sacrificial layer.
2. The method of manufacturing a photosensor according to claim 1, wherein the first member includes a thermosensitive layer.
3. The method for manufacturing a photoelectric sensor according to claim 1, further comprising:
obtaining a substrate, wherein a circuit layer is formed on the substrate;
forming a second sacrificial layer having a third through hole on the substrate;
wherein the step of forming a first metal layer includes forming the first metal layer on the second sacrificial layer.
4. A method of manufacturing a photoelectric sensor according to claim 3, wherein after the step of forming the second sacrificial layer having the third through hole on the substrate, further comprising:
depositing a third protective layer on the second sacrificial layer and in the third through hole;
etching to remove the third protective layer at the bottom of the third through hole;
the step of forming the first metal layer comprises forming the first metal layer on the third protection layer and in the third through hole, wherein the first metal layer at the bottom of the third through hole is electrically connected with a circuit in the circuit layer, and the bridge leg region is electrically connected with the circuit through the first metal layer on the side wall of the third through hole.
5. A method of manufacturing a photoelectric sensor according to claim 3, wherein in the step of obtaining a substrate, a metal reflective layer is further formed on an upper surface of the substrate.
6. The method of manufacturing a photoelectric sensor according to claim 4, further comprising a step of forming a supporting layer on the first sacrificial layer and a side wall of the first through hole after the step of forming a first sacrificial layer on the second protective layer and before the step of forming a first member on the first sacrificial layer.
7. The method of claim 6, further comprising patterning the second protective layer, the first metal layer, and the third protective layer on the second sacrificial layer to form a first release hole exposing the second sacrificial layer before the step of forming the first sacrificial layer on the second protective layer;
after the step of forming the second metal layer and before the step of releasing the first sacrificial layer, the method further comprises the step of patterning the supporting layer to form a second release hole;
the step of releasing the first sacrificial layer includes causing etchant to release the first sacrificial layer through the second release hole, and further includes causing the etchant to release the second sacrificial layer through the first release hole.
8. The method according to claim 1, wherein the material of the first metal layer includes metal titanium, and/or the material of the first protective layer and the second protective layer includes silicon nitride.
9. The method of claim 1, further comprising the step of back-sputtering the metal thickening layer after the step of forming a second via through which the second protective layer on the metal thickening layer is formed and before the step of forming a second metal layer.
10. A method of forming a bilayer metal structure comprising:
forming a first metal layer, wherein the first metal layer comprises a first area and a second area;
forming a first protective layer on the first metal layer, and leaving the upper surface of the first region uncovered by the first protective layer;
forming a photoresist layer on the upper surface of the first region and the protective layer;
removing the photoresist layer on the upper surface of the first region by photoetching;
forming a metal thickening layer on the upper surface of the first region through evaporation; the material of the metal thickening layer is the same as that of the first metal layer;
removing the photoresist layer;
forming a second protective layer on the upper surface of the metal thickening layer and the upper surface of the first protective layer;
forming a through hole penetrating the second protective layer on the metal thickening layer;
and forming a second metal layer, wherein the second metal layer is electrically connected with the first metal layer through the through hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210756732.8A CN117374132A (en) | 2022-06-30 | 2022-06-30 | Method for manufacturing photoelectric sensor and method for forming double-layer metal structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210756732.8A CN117374132A (en) | 2022-06-30 | 2022-06-30 | Method for manufacturing photoelectric sensor and method for forming double-layer metal structure |
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| CN117374132A true CN117374132A (en) | 2024-01-09 |
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| CN202210756732.8A Pending CN117374132A (en) | 2022-06-30 | 2022-06-30 | Method for manufacturing photoelectric sensor and method for forming double-layer metal structure |
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| CN (1) | CN117374132A (en) |
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