CN117355632A - Method for producing planarizing film, material for planarizing film, and planarizing film - Google Patents

Method for producing planarizing film, material for planarizing film, and planarizing film Download PDF

Info

Publication number
CN117355632A
CN117355632A CN202280037854.XA CN202280037854A CN117355632A CN 117355632 A CN117355632 A CN 117355632A CN 202280037854 A CN202280037854 A CN 202280037854A CN 117355632 A CN117355632 A CN 117355632A
Authority
CN
China
Prior art keywords
chemical formula
planarizing film
film
planarizing
carbon atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280037854.XA
Other languages
Chinese (zh)
Inventor
千叶洋一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Publication of CN117355632A publication Critical patent/CN117355632A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/90—Assemblies of multiple devices comprising at least one organic light-emitting element
    • H10K59/95—Assemblies of multiple devices comprising at least one organic light-emitting element wherein all light-emitting elements are organic, e.g. assembled OLED displays

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

The invention provides a method for manufacturing a planarization film, a material for the planarization film and the planarization film, wherein the planarization film has excellent productivity and can be formed on the concave-convex surface of a substrate with low heat resistance. The method for manufacturing the planarization film 2 includes: a method for manufacturing a planarizing film 2, which planarizes the uneven surface 11 by PECVD, from a material for the planarizing film on a substrate 1 having the uneven surface 11; the material for the planarizing film contains an oxidizing agent and an organosilane compound having an unsaturated aliphatic hydrocarbon group bonded to a Si atom; the formation of the planarizing film 2 is performed by sequentially or simultaneously performing formation and curing of an uncured film derived from a material for planarizing film on the substrate 1, both of which are performed by chemical reactions excited by plasma.

Description

Method for producing planarizing film, material for planarizing film, and planarizing film
Technical Field
The present invention relates to a method for manufacturing a planarizing film, a material for a planarizing film, and a planarizing film.
Background
The planarizing film is formed for the purpose of planarizing the uneven surface of the substrate by filling grooves existing in the substrate or filling the periphery of the protruding structures, particles, and the like on the substrate.
In a semiconductor device such as a DRAM (Dynamic Random Access Memory) and the like, an insulating film (element isolation insulating film) is provided between adjacent elements, and insulation between the elements is ensured by the insulating film. Here, the element isolation insulating film is formed by embedding the insulating film in a groove (element isolation groove) provided in the semiconductor substrate.
As a method for planarizing irregularities of a substrate, for example, patent document 1 discloses a fluidized CVD (Flowable Chemical Vapor Deposition, fluid chemical vapor deposition) method. The planarization film by the flow CVD method is embedded as follows: a silicon compound having fluidity (mainly silanol (Si (OH)) was prepared by CVD method using an organosilane or organosiloxane as a raw material 4 ) After film formation, the film is modified into a silicon oxide film by oxidation reaction. The film of the flowable silicon compound can easily enter a narrow gap, and therefore has an advantage of excellent embeddability and less tendency to generate voids.
Prior art literature
Patent literature
Patent document 1: japanese patent application laid-open No. 2012-231007
Disclosure of Invention
Technical problem to be solved by the invention
However, in the flow CVD method described in patent document 1, it is necessary to perform an oxidation reaction by performing an oxidation annealing treatment at a high temperature after forming a silicon compound film on a substrate.
Therefore, in the method of patent document 1, shrinkage and voids are generated in the obtained planarizing film due to the volume shrinkage of the silicon compound film, and there is a problem that the flatness of the planarizing film is lowered; there is a problem in that shrinkage stress is generated in the resulting planarized film due to volume shrinkage of the silicon compound film, whereby the film strength of the planarized film is lowered. In addition, in the method of patent document 1, the substrate and the surrounding structure are thermally changed by oxidation annealing at a high temperature, and therefore, the method has a problem that the method cannot be applied to a substrate or a structure having low heat resistance. Further, in the method of patent document 1, two or more steps are required, such as formation of a silicon compound film and subsequent oxidation annealing treatment, and therefore there is also a problem of low productivity.
The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a method for producing a planarizing film, a material for a planarizing film, and a planarizing film, which are excellent in productivity and capable of forming a planarizing film excellent in flatness on an uneven surface of a substrate having low heat resistance.
Technical scheme for solving technical problems
In accordance with one mode of the present invention,
Provided is a method for producing a planarization film by forming a planarization film having a rugged surface on a substrate having the rugged surface by PECVD (plasma-enhanced chemical vapor deposition, plasma enhanced chemical vapor deposition) method from a material for the planarization film, wherein,
the material for a planarization film comprises:
organosilane compounds having unsaturated aliphatic hydrocarbon groups bonded to Si atoms
An oxidizing agent;
the formation of the planarizing film is performed by sequentially or simultaneously forming and curing an uncured film derived from the planarizing film material on the substrate;
the formation and curing of the uncured film described above are both performed by a chemical reaction excited by plasma.
According to one embodiment of the present invention, there is provided a material for a planarization film for planarizing a concave-convex surface of a substrate, wherein the material for a planarization film contains at least one organosilane compound selected from the group consisting of monosilane represented by formula (1), disiloxane represented by formula (2), cyclosiloxane represented by formula (3), and trisiloxane represented by formula (4).
[ chemical formula 1]
SiR 1 a R 2 b R 3 (4-(a+b)) Formula (1)
In the formula (1), the components are as follows,
R 1 is alkenyl with 1-10 carbon atoms or alkynyl with 1-10 carbon atoms;
R 2 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 3 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
a is an integer of 1 to 4;
b is an integer of 0 to 3;
a+b is an integer of 2 to 4.
[ chemical formula 2]
In the formula (2), the amino acid sequence of the compound,
R 4 is alkenyl with 1-10 carbon atoms or alkynyl with 1-10 carbon atoms;
R 5 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 6 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
c is an integer of 1 to 3;
d is an integer of 0 to 2;
c+d is an integer of 1 to 3.
[ chemical formula 3]
In the formula (3), the amino acid sequence of the compound,
R 7 is alkenyl or having 1 to 10 carbon atomsAlkynyl with 1-10 carbon atoms;
R 8 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 9 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
e is 1 or 2;
f is 0 or 1;
e+f is 1 or 2;
n is an integer of 2 to 6.
[ chemical formula 4]
In the formula (4), the amino acid sequence of the compound,
R 10 and R is 13 Alkenyl groups having 1 to 10 carbon atoms or alkynyl groups having 1 to 10 carbon atoms, respectively;
R 11 And R is 14 Respectively an alkoxy group with 1-10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 12 and R is 15 Phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
g is an integer of 0 to 3;
i is an integer of 0 to 2;
g+i is an integer of 1 to 5;
h is an integer of 0 to 3;
j is an integer of 0 to 2;
g+h is an integer of 0 to 3;
i+j is an integer of 0 to 2.
In accordance with one mode of the present invention,
provided is a planarizing film comprising a component derived from the material for planarizing films.
In accordance with one mode of the present invention,
provided is an electronic device provided with the planarization film.
In accordance with one mode of the present invention,
provided is a coating film comprising the above-described planarizing film.
Effects of the invention
According to one embodiment of the present invention, a method for manufacturing a planarizing film, a material for a planarizing film, and a planarizing film that are excellent in productivity and that can form a planarizing film excellent in flatness on an uneven surface of a substrate having low heat resistance can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view of a substrate having a concave-convex surface, a silicon wafer with a line-and-space pattern (line and space pattern), for forming a planarizing film according to an embodiment of the present invention, showing a state before forming the planarizing film.
Fig. 2 is a schematic cross-sectional view of a substrate having a concave-convex surface, a silicon wafer with a line and space pattern, for forming a planarizing film according to an embodiment of the present invention, showing a state after the planarizing film is formed.
Fig. 3 is an electron micrograph showing a cross section of a silicon wafer with line and space patterns after the planarization film of example 1 was formed.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail.
Method for producing planarization film
The method for producing a planarizing film according to the present invention is a method for producing a planarizing film by forming a planarizing film having a concave-convex surface from a material for a planarizing film by a PECVD (plasma-enhanced chemical vapor deposition, plasma enhanced chemical vapor deposition) method on a substrate having the concave-convex surface; the material for a planarizing film contains an oxidizing agent and an organosilane compound having an unsaturated aliphatic hydrocarbon group bonded to a Si atom; the formation of the planarizing film is performed by sequentially or simultaneously forming and curing an uncured film derived from the planarizing film material on the substrate; the formation and curing of the uncured film described above are both performed by a chemical reaction excited by plasma.
As a result, the organosilane compound and the oxidizing agent, in which the unsaturated aliphatic hydrocarbon group and the Si atom are bonded, contained in the material for a planarizing film are excited by the plasma, and thereby various chemical reactions such as polymerization reaction of the carbon-carbon double bond and the triple bond contained in the unsaturated aliphatic hydrocarbon group, and polycondensation reaction of the organosilane compound by the oxidizing agent, which is converted by the plasma, are performed, and therefore an uncured film derived from the material for a planarizing film can be formed on the uneven surface of the substrate. The uncured film formed at this time is formed along the irregularities existing on the surface of the substrate, and more preferably is formed so as to be flowable on the surface of the irregularities, and thus has a function of planarizing the irregularities existing on the surface of the substrate. Further, since the uncured film is cured subsequent to or simultaneously with the formation of the uncured film, a planarizing film can be formed without requiring a separate step such as oxidation annealing at a high temperature. Therefore, a method for producing a planarizing film, a material for planarizing film, and a planarizing film, which are excellent in productivity and can form a planarizing film excellent in flatness on the uneven surface of a substrate having low heat resistance, can be provided.
Organosilane compound
The material for a planarizing film used for producing a planarizing film of the present invention contains an organosilane compound having an unsaturated aliphatic hydrocarbon group bonded to a Si atom. Here, the organosilane compound contains an unsaturated aliphatic hydrocarbon group, and two or more reactive groups may be bonded to the Si atom. Here, examples of the reactive group include not only alkenyl groups and alkynyl groups as unsaturated aliphatic hydrocarbon groups, but also one or more selected from the group consisting of alkoxy groups, hydroxyl groups, and hydrogen atoms. In particular, it is preferable to contain an organosilane compound selected from the group consisting of
Monosilane of formula (1),
Disiloxane represented by the formula (2),
Cyclosiloxanes represented by formula (3)
Trisiloxane represented by formula (4)
More than one organosilane compound in the group consisting of the above.
[ chemical formula 5]
SiR 1 a R 2 b R 3 (4-(a+b)) Formula (1)
In the formula (1), the components are as follows,
R 1 is alkenyl with 1-10 carbon atoms or alkynyl with 1-10 carbon atoms;
R 2 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 3 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
a is an integer of 1 to 4;
b is an integer of 0 to 3;
a+b is an integer of 2 to 4.
[ chemical formula 6]
In the formula (2), the amino acid sequence of the compound,
R 4 is alkenyl with 1-10 carbon atoms or alkynyl with 1-10 carbon atoms;
R 5 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 6 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
c is an integer of 1 to 3;
d is an integer of 0 to 2;
c+d is an integer of 1 to 3.
[ chemical formula 7]
In the formula (3), the amino acid sequence of the compound,
R 7 is alkenyl with 1-10 carbon atoms or alkynyl with 1-10 carbon atoms;
R 8 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 9 phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
e is 1 or 2;
f is 0 or 1;
e+f is 1 or 2;
n is an integer of 2 to 6.
[ chemical formula 8]
In the formula (4), the amino acid sequence of the compound,
R 10 and R is 13 Alkenyl groups having 1 to 10 carbon atoms or alkynyl groups having 1 to 10 carbon atoms, respectively;
R 11 and R is 14 Respectively an alkoxy group with 1-10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 12 and R is 15 Phenyl or benzyl, or a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms;
g is an integer of 0 to 3;
i is an integer of 0 to 2;
g+i is an integer of 1 to 5;
h is an integer of 0 to 3;
j is an integer of 0 to 2;
g+h is an integer of 0 to 3;
i+j is an integer of 0 to 2.
In particular, R is preferably 1 、R 4 、R 7 、R 10 And R is 13 Alkenyl groups having 1 to 5 carbon atoms or alkynyl groups having 1 to 5 carbon atoms, respectively.
Examples of the linear, branched or cyclic alkyl group having 1 to 10 carbon atoms in the formulae (1) to (4) include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, 2-ethylhexyl, cyclopropyl, cyclobutyl, and cyclohexyl.
Examples of the alkenyl group having 1 to 10 carbon atoms in the formulae (1) to (4) include vinyl, allyl, propenyl, isopropenyl, butenyl, hexenyl, cyclohexenyl and the like.
Examples of the alkynyl group having 1 to 10 carbon atoms in the formulae (1) to (4) include an ethynyl group, a 1-propynyl group, a 2-propynyl group and the like.
Examples of the alkoxy group having 1 to 10 carbon atoms in the formulae (1) to (4) include methoxy, ethoxy, n-propoxy, isopropoxy, n-butoxy, isobutoxy, sec-butoxy, tert-butoxy, n-pentoxy, sec-pentoxy, tert-pentoxy, neopentoxy, n-hexoxy, n-heptoxy, n-octoxy, 2-ethylhexoxy and the like.
Among the compounds represented by the formulas (1) to (4), more preferable are compounds 1 to 7296 described later.
The abbreviations in the compounds 1 to 7296 indicate the following groups.
Me: methyl group
Et: ethyl group
n Pr: n-propyl radical
i Pr: isopropyl group
n Bu: n-butyl group
i Bu: isobutyl group
sec Bu: sec-butyl
t Bu: tert-butyl group
OH: hydroxy group
OMe: methoxy group
OEt: ethoxy group
O n Pr: n-propoxy
O i Pr: isopropoxy group
O n Bu: n-butoxy
O i Bu: isobutoxy groups
O sec Bu: sec-butoxy radical
O t Bu: tert-butoxy radical
Thus, for example, in the case of compound 1, monosilane (i.e., siR) represented by formula (1) is shown 1 a R 2 b R 3 (4－(a+b)) ) Wherein R is 1 Is vinyl, a is 2, corresponding to R 2 The number of alkoxy groups, hydroxyl groups and hydrogen atoms of (a) is 0 (i.e. b is 0), R 3 Methyl, (4- (a+b)) is 2 (i.e., (a+b) is 2). Namely, the compound 1 is a compound composed of Si (C) 2 H 3 ) 2 (CH 3 ) 2 Monosilane represented.
Among the compounds represented by the formulas (1) to (4), compounds having a molecular weight of 400 or less are preferable from the viewpoint of vapor pressure.
[ chemical formula 9]
A kind of electronic device with high-pressure air-conditioning system
[ chemical formula 10]
(1)
[ chemical formula 11]
(1)
[ chemical formula 12]
(1)
[ chemical formula 13]
(1)
[ chemical formula 14]
(1)
[ chemical formula 15]
(1)
[ chemical formula 16]
(1)
[ chemical formula 17]
(1)
[ chemical formula 18]
(1)
[ chemical formula 19]
(1)
[ chemical formula 20]
(1)
[ chemical formula 21]
(1)
[ chemical formula 22]
(1)
[ chemical formula 23]
(1)
[ chemical formula 24]
(1)
[ chemical formula 25]
(1)
[ chemical formula 26]
(1)
[ chemical formula 27]
(1)
[ chemical formula 28]
(1)
[ chemical formula 29]
(1)
[ chemical formula 30]
(1)
[ chemical formula 31]
(1)
[ chemical formula 32]
(1)
[ chemical formula 33]
(1)
[ chemical formula 34]
(1)
[ chemical formula 35]
(1)
[ chemical formula 36]
(1)
[ chemical formula 37]
(1)
[ chemical formula 38]
(1)
[ chemical formula 39]
(1)
[ chemical formula 40]
(1)
[ chemical formula 41]
(1)
[ chemical formula 42]
(1)
[ chemical formula 43]
(1)
[ chemical formula 44]
(1)
[ chemical formula 45]
(1)
[ chemical formula 46]
(1)
[ chemical formula 47]
(1)
[ chemical formula 48]
(1)
[ chemical formula 49]
(1)
[ chemical formula 50]
(1)
[ chemical formula 51]
(1)
[ chemical formula 52]
(1)
[ chemical formula 53]
(1)
[ chemical formula 54]
(1)
[ chemical formula 55]
(1)
[ chemical formula 56]
(1)
[ chemical formula 57]
(1)
[ chemical formula 58]
(1)
[ chemical formula 59]
(1)
[ chemical formula 60]
(1)
[ chemical formula 61]
(1)
[ chemical formula 62]
(1)
[ chemical formula 63]
(1)
[ chemical formula 64]
(1)
[ chemical formula 65]
(1)
[ chemical formula 66]
(1)
[ chemical formula 67]
(1)
[ chemical formula 68]
(1)
[ chemical formula 69]
(1)
[ chemical formula 70]
(1)
[ chemical formula 71]
(1)
[ chemical formula 72]
(1)
[ chemical formula 73]
(1)
[ chemical formula 74]
(1)
[ chemical formula 75]
(1)
[ chemical formula 76]
(1)
[ chemical formula 77]
(1)
[ chemical formula 78]
(1)
[ chemical formula 79]
(1)
[ chemical formula 80]
(1)
[ chemical formula 81]
(1)
[ chemical formula 82]
(1)
[ chemical formula 83]
(1)
[ chemical formula 84]
(1)
[ chemical formula 85]
(1)
[ chemical formula 86]
(1)
[ chemical formula 87]
(1)
[ chemical formula 88]
(1)
[ chemical formula 89]
(1)
[ chemical formula 90]
(1)
[ chemical formula 91]
(1)
[ chemical formula 92]
(1)
[ chemical formula 93]
(1)
[ chemical formula 94]
(1)
[ chemical formula 95]
(1)
[ chemical formula 96]
(1)
[ chemical formula 97]
(1)
[ chemical formula 98]
(1)
[ chemical formula 99]
(1)
[ chemical formula 100]
(1)
[ chemical formula 101]
(1)
[ chemical formula 102]
(1)
[ chemical formula 103]
(1)
[ chemical formula 104]
(1)
[ chemical formula 105]
(1)
[ chemical formula 106]
(1)
[ chemical formula 107]
(1)
[ chemical formula 108]
(1)
[ chemical formula 109]
(1)
[ chemical formula 110]
(1)
[ chemical formula 111]
(1)
[ chemical formula 112]
(1)
[ chemical formula 113]
(1)
[ chemical formula 114]
(1)
[ chemical formula 115]
(1)
[ chemical formula 116]
(1)
[ chemistry 117]
(1)
[ chemical formula 118]
(1)
[ chemical formula 119]
(1)
[ chemical formula 120]
(1)
[ chemical formula 121]
(1)
[ chemical formula 122]
(1)
[ chemical formula 123]
(1)
[ chemical formula 124]
(1)
[ chemical formula 125]
(1)
[ chemical formula 126]
(1)
[ chemical formula 127]
(1)
[ chemical formula 128]
(1)
[ chemical formula 129]
(1)
[ chemistry 130]
(1)
[ chemical formula 131]
(1)
[ chemical formula 132]
(1)
[ chemical formula 133]
(1)
[ chemical formula 134]
(1)
[ chemical formula 135]
(1)
[ chemical formula 136]
(1)
[ chemical formula 137]
(1)
[ chemical formula 138]
(1)
[ chemical formula 139]
(1)
[ chemical formula 140]
(1)
[ chemical formula 141]
(1)
[ chemical formula 142]
(1)
[ chemical formula 143]
(1)
[ chemical formula 144]
(1)
[ chemical formula 145]
(1)
[ chemical formula 146]
(1)
[ chemical formula 147]
(1)
[ chemical formula 148]
(1)
[ chemical formula 149]
(1)
[ chemical formula 150]
(1)
[ chemical formula 151]
(1)
[ chemical formula 152]
(1)
[ chemical formula 153]
(1)
[ chemical formula 154]
(1)
[ chemical formula 155]
(1)
[ chemical formula 156]
(1)
[ chemical formula 157]
(1)
[ chemical formula 158]
(1)
[ chemical formula 159]
(1)
[ chemical formula 160]
(1)
[ chemical formula 161]
(1)
[ chemical formula 162]
(1)
[ chemical formula 163]
(1)
[ chemical formula 164]
(1)
[ chemical formula 165]
(1)
[ chemical formula 166]
(1)
[ chemical formula 167]
(1)
[ chemical formula 168]
(1)
[ chemical formula 169]
(1)
[ chemical formula 170]
(1)
[ chemical formula 171]
(1)
[ chemical formula 172]
(1)
[ chemical formula 173]
(1)
[ chemical formula 174]
(1)
[ chemical formula 175]
(1)
[ chemical formula 176]
(1)
[ chemical formula 177]
(1)
[ chemical formula 178]
(1)
[ chemical formula 179]
(1)
[ chemical formula 180]
(1)
[ chemical formula 181]
(1)
[ chemical formula 182]
(1)
[ chemical formula 183]
(1)
[ chemical formula 184]
(1)
[ chemical formula 185]
A kind of (1)
[ chemical formula 186]
(1)
[ chemical formula 187]
(1)
[ chemical formula 188]
(1)
[ chemical formula 189]
(1)
[ chemical formula 190]
(1)
[ chemical formula 191]
(1)
[ chemical formula 192]
(1)
[ chemical formula 193]
(1)
[ chemical formula 194]
(1)
[ chemical formula 195]
(1)
[ chemical formula 196]
(1)
[ chemical formula 197]
(1)
[ chemical formula 198]
(1)
[ chemical formula 199]
(1)
[ chemical formula 200]
(1)
[ chemical formula 201]
(1)
[ chemical formula 202]
(1)
[ chemical formula 203]
(1)
[ chemical formula 204]
(1)
[ chemical formula 205]
(1)
[ chemical formula 206]
(1)
[ chemical formula 207]
(1)
[ chemical formula 208]
(1)
[ chemical formula 209]
(1)
[ chemical formula 210]
(1)
[ chemical formula 211]
(1)
[ chemical formula 212]
(1)
[ chemical formula 213]
(1)
[ chemical formula 214]
(1)
[ chemical formula 215]
(1)
[ chemical formula 216]
(1)
[ chemical formula 217]
(1)
[ chemical formula 218]
(1)
[ chemical formula 219]
(1)
[ chemical formula 220]
(1)
[ chemical formula 221]
(1)
[ chemical formula 222]
(1)
[ chemical formula 223]
(1)
[ chemical formula 224]
(1)
[ chemical formula 225]
(2)
[ chemical formula 226]
(2)
[ chemical formula 227]
(2)
[ chemical formula 228]
(2)
[ chemical formula 229]
(2)
[ chemical formula 230]
(2)
[ chemical formula 231]
(2)
[ chemical formula 232]
(2)
[ chemical formula 233]
(2)
[ chemical formula 234]
(2)
[ chemical formula 235]
(2)
[ chemical formula 236]
(2)
[ chemical formula 237]
(2)
[ chemical formula 238]
(2)
[ chemical formula 239]
(2)
[ chemical formula 240]
(2)
[ chemical formula 241]
(2)
[ chemical formula 242]
(2)
[ chemical formula 243]
(2)
[ chemical formula 244]
(2)
[ chemical formula 245]
(2)
[ chemical formula 246]
(2)
[ chemical formula 247]
(2)
[ chemical formula 248]
(2)
[ chemical formula 249]
(2)
[ chemical formula 250]
(2)
[ chemical formula 251]
(2)
[ chemical formula 252]
(2)
[ chemistry 253]
(2)
[ chemical formula 254]
(2)
[ chemical formula 255]
(2)
[ chemical formula 256]
(2)
[ chemistry type 257]
(2)
[ chemical formula 258]
(2)
[ chemical formula 259]
(2)
[ chemical formula 260]
(2)
[ chemical formula 261]
(2)
[ chemical formula 262]
(2)
[ chemical formula 263]
(2)
[ chemical formula 264]
(2)
[ chemical formula 265]
(2)
[ chemical formula 266]
(2)
[ chemical formula 267]
(2)
[ chemical formula 268]
(2)
[ chemical formula 269]
(2)
[ chemical formula 270]
(2)
[ chemical formula 271]
(2)
[ chemical formula 272]
(2)
[ chemical formula 273]
(2)
[ chemical formula 274]
(2)
[ chemical formula 275]
(2)
[ chemical formula 276]
(2)
[ chemical formula 277]
(2)
[ chemical formula 278]
(2)
[ chemical formula 279]
(2)
[ chemical formula 280]
(2)
[ chemical formula 281]
(2)
[ chemical formula 282]
(2)
[ chemical formula 283]
(2)
[ chemical formula 284]
(2)
[ chemical formula 285]
(2)
[ chemical formula 286]
(2)
[ chemical formula 287]
(2)
[ chemical formula 288]
(2)
[ chemical formula 289]
(2)
[ chemical formula 290]
(2)
[ chemical formula 291]
(2)
[ chemical formula 292]
(2)
Chemical formula 293
(2)
[ chemical formula 294]
(2)
[ chemical formula 295]
(2)
[ chemistry 296]
(2)
[ chemical formula 297]
(2)
[ chemical formula 298]
(2)
[ chemical formula 299]
(2)
[ chemical formula 300]
(2)
[ chemical formula 301]
(2)
[ chemical formula 302]
(2)
[ chemical formula 303]
(2)
[ chemical formula 304]
(2)
[ chemical formula 305]
(2)
[ chemical formula 306]
(2)
[ chemical formula 307]
(2)
[ chemical formula 308]
(2)
[ chemical formula 309]
(2)
[ chemical formula 310]
(2)
[ chemical formula 311]
(2)
[ chemical formula 312]
(2)
[ chemical formula 313]
(2)
[ chemical formula 314]
(2)
[ chemical formula 315]
(2)
[ chemical formula 316]
(2)
[ chemical formula 317]
(2)
[ chemical formula 318]
(2)
[ chemical formula 319]
(2)
[ chemical formula 320]
(2)
[ chemical formula 321]
(2)
[ chemical formula 322]
(2)
[ chemical formula 323]
(2)
[ chemical formula 324]
(2)
[ chemical formula 325]
(2)
[ chemical formula 326]
(2)
[ chemical formula 327]
(2)
[ chemical formula 328]
(2)
[ chemistry 329]
(2)
[ chemical formula 330]
(2)
[ chemistry 331]
(2)
[ chemical formula 332]
(2)
[ chemical formula 333]
(2)
[ chemical formula 334]
(2)
[ chemical formula 335]
(2)
[ chemical formula 336]
(2)
[ chemical formula 337]
(2)
[ chemical formula 338]
(2
[ chemical formula 339]
(2)
[ chemical formula 340]
(2)
[ chemical formula 341]
(2)
[ chemical formula 342]
(2)
[ chemical formula 343]
(2)
[ chemical formula 344]
(2)
[ chemical formula 345]
(2)
[ chemical formula 346]
(2)
[ chemical formula 347]
(2)
[ chemical formula 348]
(2)
[ chemical formula 349]
(2)
[ chemical formula 350]
(2
[ chemical formula 351]
(2)
[ chemical formula 352]
(2)
[ chemical formula 353]
(2)
[ chemical formula 354]
(2)
[ chemical formula 355]
(2)
[ chemical formula 356]
(2)
[ chemistry 357]
(2)
[ chemical formula 358]
(2)
[ chemical formula 359]
(2)
[ chemical formula 360]
(2)
[ chemical formula 361]
(2)
[ chemical formula 362]
(2
[ chemical formula 363]
(2)
[ chemical formula 364]
(2)
[ chemical formula 365]
(2)
[ chemical formula 366]
(2)
[ chemical formula 367]
(2)
[ chemical formula 368]
(2)
[ chemical formula 369]
(2)
[ chemical formula 370]
(2)
[ chemical formula 371]
(2)
[ chemical formula 372]
(2)
[ chemical formula 373]
(2)
[ chemical formula 374]
(2)
[ chemical formula 375]
(2)
[ chemical formula 376]
(2)
[ chemical formula 377]
(2)
[ chemical formula 378]
(2)
[ chemical formula 379]
(2)
[ chemical formula 380]
(2)
[ chemical formula 381]
(2)
[ chemical formula 382]
(2)
[ chemical formula 383]
(2)
[ chemical formula 384]
(2)
[ chemical formula 385]
(2)
[ chemical formula 386]
(2)
[ chemical formula 387]
(2)
[ chemical formula 388]
(2)
[ chemical formula 389]
(2)
[ chemical formula 390]
(2)
[ chemical formula 391]
(2)
[ chemical formula 392]
(2)
[ chemical formula 393]
(2)
[ chemical formula 394]
(2)
[ chemical formula 395]
(2)
[ chemical formula 396]
(2)
[ chemical formula 397]
(2)
[ chemical formula 398]
(2)
[ chemical formula 399]
(2)
[ chemical formula 400]
(2)
[ chemical formula 401]
(2)
[ chemical formula 402]
(2)
[ chemical formula 403]
(2)
[ chemical formula 404]
(2)
[ chemical formula 405]
(2)
[ chemical formula 406]
(2)
[ chemical formula 407]
(2)
[ chemical formula 408]
(2)
[ chemical formula 409]
(2)
[ chemical formula 410]
(2)
[ chemical formula 411]
(2)
[ chemical formula 412]
(2)
[ chemical formula 413]
(2)
[ chemical formula 414]
(2)
[ chemical formula 415]
(2)
[ chemical formula 416]
(2)
[ chemical formula 417]
(2)
[ chemical formula 418]
(2)
[ chemical formula 419]
(2)
[ chemical formula 420]
(2)
[ chemical formula 421]
(2)
[ chemical formula 422]
(2)
[ chemistry 423]
(2)
[ chemical formula 424]
(2)
[ chemical formula 425]
(2)
[ chemical formula 426]
(2)
[ chemical formula 427]
(2)
[ chemical formula 428]
(2)
[ chemical formula 429]
(2)
[ chemical formula 430]
(2)
[ chemical formula 431]
(2)
[ chemical formula 432]
(2)
[ chemical formula 433]
(2)
[ chemical formula 434]
(2)
[ chemistry 435]
(2)
[ chemical formula 436]
(2)
[ chemical formula 437]
(2)
[ chemical formula 438]
(2)
[ chemistry 439]
(2)
[ chemical formula 440]
(2)
[ chemical formula 441]
(3)
[ chemical formula 442]
(3)
[ chemical formula 443]
(3)
[ chemical formula 444]
(3)
/>
[ chemical formula 445]
(3)
[ chemical formula 446]
(3)
[ chemical formula 447]
(3)
[ chemical formula 448]
(3)
[ chemical formula 449]
(3)
[ chemical formula 450]
(3)
[ chemical formula 451]
(3)
/>
[ chemical formula 452]
(3)
[ chemical formula 453]
(3)
[ chemical formula 454]
(3)
[ chemical formula 455]
(3)
[ chemical formula 456]
(3)
[ chemistry formula 457]
(3)
[ chemical formula 458]
(3)
/>
[ chemical formula 459]
(3)
[ chemical formula 460]
(3)
[ chemical formula 461]
(3)
[ chemical formula 462]
(3)
[ chemical formula 463]
(3)
[ chemical formula 464]
(3)
[ chemical formula 465]
(3)
/>
[ chemical formula 466]
(3)
[ chemical formula 467]
(3)
[ chemistry type 468]
(3)
[ chemical formula 469]
(3)
[ chemical formula 470]
(3)
[ chemistry 471]
(3)
[ chemical formula 472]
(3)
/>
[ chemical formula 473]
(3)
[ chemical formula 474]
(3)
[ chemical formula 475]
(3)
[ chemical formula 476]
(3)
[ chemical formula 477]
(3)
[ chemical formula 478]
(3)
[ chemical formula 479]
(3)
/>
[ chemical formula 480]
(3)
[ chemical formula 481]
(3)
[ chemical formula 482]
(3)
[ chemical formula 483]
(3)
[ chemical formula 484]
(3)
[ chemical formula 485]
(3)
[ chemical formula 486]
(3)
/>
[ chemical formula 487]
(3)
[ chemical formula 488]
(3)
[ chemical formula 489]
(3)
[ chemical formula 490]
(3)
[ chemical formula 491]
(3)
[ chemical formula 492]
(3)
[ chemical formula 493]
(3)
/>
[ chemical formula 494]
(3)
[ chemical formula 495]
(3)
[ chemical formula 496]
(3)
[ chemical formula 497]
(3)
[ chemical formula 498]
(3)
[ chemical formula 499]
(3)
[ chemical formula 500]
(3)
/>
[ chemical formula 501]
(3)
[ chemical formula 502]
(3)
[ chemical formula 503]
(3)
[ chemical formula 504]
(3)
[ chemical formula 505]
(3)
[ chemical formula 506]
(3)
[ chemical formula 507]
(3)
/>
[ chemical formula 508]
(3)
[ chemical formula 509]
(3)
[ chemical formula 510]
(3)
[ chemical formula 511]
(3)
[ chemical formula 512]
(3)
[ chemical formula 513]
(3)
[ chemical formula 514]
(3)
/>
[ chemical formula 515]
(3)
[ chemical formula 516]
(3)
[ chemical formula 517]
(3)
[ chemical formula 518]
(3)
[ chemical formula 519]
(3)
[ chemical formula 520]
(3)
[ chemical formula 521]
(3)
/>
[ chemical formula 522]
(3)
[ chemical formula 523]
(3)
[ chemical formula 524]
(3)
[ chemical formula 525]
(3)
[ chemical formula 526]
(3)
[ chemical formula 527]
(3)
[ chemical formula 528]
(3)
/>
[ chemical formula 529]
(3)
[ chemical formula 530]
(3)
[ chemical formula 531]
(3)
[ chemical formula 532]
(3)
[ chemical formula 533]
(3)
[ chemical formula 534]
(3)
[ chemical formula 535]
(3)
/>
[ chemical formula 536]
(3)
[ chemical formula 537]
(3)
[ chemical formula 538]
(3)
[ chemical formula 539]
(3)
[ chemical formula 540]
(3)
[ chemical formula 541]
(3)
[ chemical formula 542]
(3)
/>
[ chemical formula 543]
(3)
[ chemical formula 544]
(3)
[ chemical formula 545]
(3)
[ chemical formula 546]
(3)
[ chemical formula 547]
(3)
[ chemistry 548]
(3)
[ chemical formula 549]
(3)
/>
[ chemical formula 550]
(3)
[ chemical formula 551]
(3)
[ chemical formula 552]
(3)
[ chemical formula 553]
(3)
[ chemistry 554]
(3)
[ chemical formula 555]
(3)
[ chemical formula 556]
(3)
/>
[ chemical formula 557]
(3)
[ chemical formula 558]
(3)
[ chemical formula 559]
(3)
[ chemical formula 560]
(3)
[ chemical formula 561]
(3)
[ chemical formula 562]
(3)
[ chemical formula 563]
(3)
/>
[ chemical formula 564]
(3)
[ chemical formula 565]
(3)
[ chemical formula 566]
(3)
[ chemical formula 567]
(3)
[ chemical formula 568]
(3)
[ chemical formula 569]
(3)
[ chemical formula 570]
(3)
/>
[ chemical formula 571]
(3)
[ chemical formula 572]
(3)
[ chemistry 573]
(3)
[ chemical formula 574]
(3)
[ chemical formula 575]
(3)
[ chemical formula 576]
(3)
[ chemical formula 577]
(3)
/>
[ chemical formula 578]
(3)
[ chemical formula 579]
(3)
[ chemical formula 580]
(3)
[ chemical formula 581]
(3)
[ chemical formula 582]
(3)
[ chemical formula 583]
(3)
[ chemical formula 584]
(3)
/>
[ chemical formula 585]
(3)
[ chemical formula 586]
(3)
[ chemical formula 587]
(3)
[ chemical formula 588]
(3)
[ chemical formula 589]
(3)
[ chemical formula 590]
(3)
[ chemical formula 591]
(3)
/>
[ chemical formula 592]
(3)
[ chemical formula 593]
(3)
[ chemical formula 594]
(3)
[ chemical formula 595]
(3)
[ chemical formula 596]
(3)
[ chemical formula 597]
(3)
[ chemical formula 598]
(3)
/>
[ chemical formula 599]
(3)
[ chemical formula 600]
(3)
[ chemical formula 601]
(3)
[ chemical formula 602]
(3)
[ chemical formula 603]
(3)
[ chemical formula 604]
(3)
[ chemical formula 605]
(3)
/>
[ chemical formula 606]
(3)
[ chemical formula 607]
(3)
[ chemical formula 608]
(3)
[ chemical formula 609]
(3)
[ chemical formula 610]
(3)
[ chemical formula 611]
(3)
[ chemical formula 612]
(3)
/>
[ chemical formula 613]
(3)
[ chemical formula 614]
(3)
[ chemical formula 615]
(3)
[ chemical formula 616]
(3)
[ chemical formula 617]
(3)
[ chemical formula 618]
(3)
[ chemical formula 619]
(3)
/>
[ chemical formula 620]
(3)
[ chemical formula 621]
(3)
[ chemical formula 622]
(3)
[ chemical formula 623]
(3)
[ chemical formula 624]
(3)
[ chemical formula 625]
(3)
[ chemical formula 626]
(3)
/>
[ chemical formula 627]
(3)
[ chemical formula 628]
(3)
[ chemical formula 629]
(3)
[ chemical formula 630]
(3)
[ chemical formula 631]
(3)
[ chemical formula 632]
(3)
[ chemical formula 633]
(3)
/>
[ chemical formula 634]
(3)
[ chemical formula 635]
(3)
[ chemical formula 636]
(3)
[ chemical formula 637]
(3)
[ chemical formula 638]
(3)
[ chemical formula 639]
(3)
[ chemical formula 640]
(3)
/>
[ chemical formula 641]
(3)
[ chemical formula 642]
(3)
[ chemical formula 643]
(3)
[ chemical formula 644]
(3)
[ chemical formula 645]
(3)
[ chemical formula 646]
(3)
[ chemical formula 647]
(3)
/>
[ chemical formula 648]
(3)
[ chemical formula 649]
(3)
[ chemical formula 650]
(3)
[ chemical formula 651]
(3)
[ chemical formula 652]
(3)
[ chemistry 653]
(3)
[ chemistry 654]
(3)
/>
[ chemical formula 655]
(3)
[ chemical 656]
(3)
[ chemical formula 657]
(1)
(2)
(3)
[ chemical formula 658]
(4)
[ chemical formula 659]
(4)
[ chemical formula 660]
(4)
[ chemical formula 661]
(4)
[ chemical formula 662]
(4)
[ chemical formula 663]
(4)
[ chemical formula 664]
(4)
[ chemical formula 665]
(4)
/>
[ chemical formula 666]
(4)
[ chemical formula 667]
(4)
[ chemical formula 668]
(4)
[ chemical formula 669]
(4)
[ chemical formula 670]
(4)
[ chemical formula 671]
(4)
[ chemical formula 672]
(4)
[ chemical formula 673]
(4)
/>
Particularly preferred among the organosilane compounds are: tetravinylsilane, trivinylsilane, divinylsilane, vinylsilane, tetraallylsilane, triallylsilane, diallylsilane, allylsilane, methylttrivinylsilane, ethyltrivinylsilane, triallylmethylsilane, triallylethylsilane, dimethyldivinylsilane, diallyldimethylsilane, diethyldivinylsilane, diallyldiethylsilane, methyldivinylsilane, diallylmethylsilane, ethyldivinylsilane, diallylethylsilane, methylvinylsilane, allylmethylsilane, ethylvinylsilane, allylethylsilane, dimethylvinylsilane, allyldimethylsilane, diethylvinylsilane, allyldiethylsilane, tetraethynyl silane, triethynyl silane, diacetynyl silane, ethynyl silane, triethynyl methyl silane, diacetynyl dimethyl silane, diacetynyl methyl silane, ethynyl dimethyl silane, ethynyl methyl silane, methoxydimethyl vinyl silane, ethoxydimethyl vinyl silane, diethylmethoxyvinyl silane, diethoxyethyl vinyl silane, ethynylmethoxy dimethyl silane, dimethoxymethyl vinyl silane, ethyldimethoxy vinyl silane, dimethoxy n-propyl vinyl silane, isopropyl dimethoxy vinyl silane, diethoxymethyl vinyl silane, diethoxyethyl vinyl silane, diethoxy n-propyl vinyl silane, diethoxy isopropyl vinyl silane, allyl dimethoxy methyl silane, allyl ethyl dimethoxy silane, allyl dimethoxy n-propyl silane, allyl isopropyl dimethoxy silane, allyl diethoxymethyl silane, allyl diethoxyethyl silane, allyl diethoxy n-propyl silane, allyl diethoxyisopropyl silane, ethynyl dimethoxymethyl silane, trimethoxyvinyl silane, triethoxyvinyl silane, tri-n-propoxyvinyl silane, triisopropoxyvinyl silane, tri-n-butoxyvinyl silane, tri-sec-butoxyvinyl silane, triisobutoxyvinyl silane, tri-tert-butoxyvinyl silane, allyl trimethoxy silane, allyl triethoxy silane, allyl tri-n-propoxysilane, allyl triisopropoxysilane, allyl tri-n-butoxysilane, allyl tri-sec-butoxysilane, allyl triisobutoxysilane, allyl tri-tert-butoxysilane, ethynyl trimethoxy silane, methoxymethyl divinyl silane, ethoxymethyl divinyl silane, ethylmethoxydivinyl silane, ethoxyethyl divinyl silane, diacetylethoxymethyl silane, methoxytrivinyl silane, ethoxytrivinyl silane, n-propoxytrivinyl silane, isopropoxyi-silane, trimethoxy silane, dimethoxydivinyl silane, diethoxydivinyl silane, di-n-propyldiethoxyvinyl silane, di-n-butoxyvinyl silane, di-sec-butyloxyvinyl silane, di-n-diallyldi-n-butoxysilane, di-n-allyldiallyl-di-n-butoxysilane, diallyl diisobutoxy silane, diallyl di-t-butoxy silane, diethynyldimethoxy silane, methoxymethyl vinyl silane, ethoxymethyl vinyl silane, ethylmethoxy vinyl silane, ethoxyethyl vinyl silane, allylmethoxy methyl silane, allylethoxymethyl silane, allylethylmethoxy silane, allylethoxyethyl silane, methoxyvinyl silane, ethoxyvinyl silane, allylmethoxy silane, allylethoxysilane, 2,4, 6-trivinyl cyclotrisiloxane, 2,4, 6-trimethyl-2, 4, 6-trivinyl cyclotrisiloxane, 2,4, 6-triethyl-2, 4, 6-trivinyl cyclotrisiloxane, 2,4, 6-tri-n-propyl-2, 4, 6-trivinyl cyclotrisiloxane, 2,4, 6-triisopropyl-2, 4, 6-trivinyl cyclotrisiloxane, 1, 5-divinyl hexamethyltrisiloxane, and the like.
Oxidizing agent
The material for the planarizing film used in the production of the planarizing film of the present invention needs to contain an oxidizing agent.
Examples of the oxidizing agent include oxygen, ozone, nitrogen oxides, carbon dioxide, carbon monoxide, hydrogen peroxide, and the like. The oxidizing agent may be a mixture of two or more of them.
Alcohol, water
The material for a planarizing film used in the production of a planarizing film of the present invention may further contain one or more selected from the group consisting of alcohol and water.
Among them, as the alcohol, there may be mentioned: monohydric alcohols such as methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol, sec-butanol, t-butanol, n-amyl alcohol (n-amyl alcohol), t-amyl alcohol, n-hexanol, 2-hexanol, 3-hexanol, 2-methyl-1-pentanol, 3-methyl-1-pentanol, 4-methyl-1-pentanol, 2-methyl-2-pentanol, n-heptanol, n-octanol, and 2-ethylhexanol, and polyhydric alcohols such as 1, 2-ethylene glycol. Here, the material for the planarizing film may be a mixture of two or more of these alcohols, or a mixture of water and one or more of these alcohols.
On the other hand, the material for the planarization film used in the production of the planarization film of the present invention may be a material substantially free of alcohol and water. The "substantially free" of alcohol and water herein includes not only a material free of alcohol and water but also a material obtained without intentionally adding alcohol and water to a material for a planarizing film. That is, in the case where the alcohol and water are "substantially not contained", the alcohol and water may be contained as impurities in the material for a planarization film, and more specifically, the alcohol and water may be contained in a proportion of 0.1% by volume or less in the material for a planarization film.
Substrate >, substrate and method for manufacturing the same
As a substrate (film-forming substrate) for forming the planarizing film, a substrate having a concave-convex surface can be used. By using a substrate having a concave-convex surface, a flattening film for flattening the concave-convex surface can be formed using the material for flattening film.
Here, the material of the base material is not particularly limited, and examples thereof include: ceramic substrates such as metal oxides, metal nitrides, metal oxynitrides, and silicon oxides; a crystal substrate of silicon or the like; metal base plates such as metals and alloys; a plastic substrate; glass substrates, and the like.
Among them, examples of the plastic substrate include: polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, cyclic olefin polymer, polyethylene, polypropylene, polystyrene, polyvinyl chloride, ABS (Acrylonitrile butadiene styrene) resin, methacrylic resin, modified polyphenylene oxide, polyamide, polyacetal, polybutylene terephthalate, polyarylate, polysulfone, polyether sulfone, polyamide imide, polyether imide, polyphenylene sulfide, polyether ether ketone, fluorine resin, and the like.
The base material may be a base material having a different material from the base material, a base material having one or more layers laminated on the surface of the base material, or the like.
The surface of the base material is provided with a concave-convex surface. The concave-convex surface is not particularly limited, and a surface having a line and space pattern is exemplified as a representative surface. Here, the line and gap pattern is a pattern in which line portions (linear convex portions having a specific width) and gap portions (linear concave portions having a specific width) are alternately arranged adjacently. The line portion and the gap portion may have a width of 2 μm or more and 100 μm or less, and a plurality of line portions and gap portions having a certain width (for example, a μm) may be arranged in series adjacent to each other in 1 group. In addition, the repeating structure of the line portion and the gap portion of the same width (for example, a μm) may be disposed adjacent to the repeating structure of the line portion and the gap portion of the same width (for example, B μm) with the flat portion of a specific width interposed therebetween. The step height between the line portion and the gap portion in the line and gap pattern is not particularly limited, and is in the range of 1 μm to 3 μm.
When forming the planarizing film, a substrate is supplied to a chamber (film forming chamber) of a film forming apparatus of a PECVD method. The method for transporting the substrate to the film forming chamber is not particularly limited, and known methods such as batch type, single-sheet type, and roll-to-roll type can be used.
Formation of planarization film
The material for the planarization film is formed into a planarization film by a PECVD method. In this case, when the raw materials constituting the planarizing film material are in a state other than gas, all of the raw materials are vaporized and supplied to a film forming chamber (chamber) in which a substrate is provided.
Here, examples of the method for vaporizing the material for the planarizing film other than the gas include: a method of vaporizing the raw material by placing the raw material in a heated constant temperature bath and reducing the pressure by using a vacuum pump or the like; a method of vaporizing a raw material by blowing a carrier gas such as helium, neon, argon, krypton, xenon or nitrogen into a heated constant temperature bath; and a method (Liquid Injection) in which the material for the planarizing film is fed to a vaporizer in a state of being dissolved in a solvent to prepare a solution, and is heated to vaporize the material in the vaporizer.
In particular, in the case where the planarizing film material is dissolved in a solvent and vaporized, examples of the solvent that dissolves the planarizing film material include: ethers such as 1, 2-dimethoxyethane, diglyme, triglyme, dioxane, tetrahydrofuran, and cyclopentylmethyl ether; hydrocarbons such as hexane, cyclohexane, methylcyclohexane, ethylcyclohexane, heptane, octane, nonane, decane, benzene, toluene, ethylbenzene, and xylene.
The constituent components of the material for the planarizing film in a gaseous state or in a gaseous state by vaporization are supplied to the film forming chamber in a form of being mixed entirely, partially mixed, or not mixed.
The planarization film material such as an organosilane compound supplied to the film forming chamber is excited by plasma generated in the film forming chamber, and thereby various chemical reactions such as polymerization reaction of carbon-carbon double bonds and triple bonds contained in the unsaturated aliphatic hydrocarbon group, and polycondensation reaction of the organosilane compound by the oxidizing agent for plasma formation are performed, whereby an uncured film derived from the planarization film material is formed on the substrate. In addition, the uncured film is cured by plasma, thereby forming a planarized film. Here, the formation and curing of the uncured film derived from the material for a planarizing film on the substrate may be performed by sequentially or simultaneously. More specifically, both the formation and curing of the uncured film can be performed by a chemical reaction excited by plasma. Here, the chemical reaction of the plasma excitation may be performed only by excitation with plasma, or the substrate may be heated by irradiation with light in combination with excitation with plasma. In particular, from the viewpoint of improving productivity, it is preferable to perform the formation and curing of the uncured film in a single process.
The source of the plasma for exciting the chemical reaction of the material for the planarization film is not particularly limited, and a plasma generated by a high-frequency (RF) power source may be used, and more specifically, a capacitively coupled plasma, an inductively coupled plasma, a helicon plasma, a surface wave plasma, an electron cyclotron resonance plasma, or the like may be used.
Here, the power density applied to the electrode of the PECVD apparatus for generating plasma is preferably 0.01W/cm 2 The above is more preferably 0.01W/cm 2 Above and 100W-cm 2 The following ranges.
The temperature of the surface of the substrate (particularly, the surface on which the planarizing film is formed) at the time of forming the planarizing film is not particularly limited, and is preferably 300 ℃ or lower, more preferably in the range of-100 ℃ or higher and 300 ℃ or lower, and still more preferably in the range of 0 ℃ or higher and 200 ℃ or lower. On the other hand, the surface temperature of the substrate when forming the planarizing film is preferably equal to or lower than the heat-resistant temperature of the substrate. In particular, the surface temperature of the substrate is preferably in these temperature ranges during the formation and curing of the uncured film.
The atmospheric pressure at the time of forming the planarizing film is not particularly limited, but is preferably in the range of 0.01Pa to 101325Pa, particularly preferably in the range of 1Pa to 10000 Pa.
Further, when forming a planarizing film from a material for planarizing film, the planarizing film is formed with the surface temperature of the substrate and the atmospheric pressure; the film formation conditions can be appropriately adjusted based on the flow rate of the organosilane compound, the presence or absence of alcohol and water, the flow rate thereof, the flow rate of the oxidizing agent, the presence or absence of a carrier gas such as helium, the flow rate thereof, and the like. Here, regarding the formation of the planarizing film, the ratio of Y to X (Y/X ratio) is preferably 20 or less, more preferably 10 or less, when the flow rate of the organosilane compound constituting the planarizing film material supplied at the time of film formation is X [ sccm ], the flow rate of one or more selected from the group consisting of alcohol and water is Y [ sccm ], and the flow rate of the oxidizing agent is Z [ sccm ]. In this case, the ratio of Z to X (Z/X ratio) is preferably 20 or less, more preferably 10 or less. In particular, by reducing one or both of the Y/X ratio and the Z/X ratio, the planarization rate by the planarization film can be further improved. On the other hand, the lower limit of the Z/X ratio is desirably more than 0, preferably 0.01 or more. The lower limit of the Y/X ratio is not particularly limited, and may be 0.
The film thickness of the planarizing film formed by the PECVD method is not particularly limited, and is preferably equal to or greater than the height of the broken slope of the uneven surface of the substrate. Here, when a planarizing film is formed on a substrate having an uneven surface provided on a part of the substrate surface, the "film thickness of the planarizing film" may be a film thickness formed on a flat portion (i.e., a portion where no uneven surface is formed) of the substrate surface.
The planarizing film formed by the above process and mainly composed of silicon oxide can be formed by using an organosilane compound in which an unsaturated aliphatic hydrocarbon group in a gaseous state is bonded to Si atoms and an oxidizing agent in a film forming chamber. Thus, a planarizing film having high planarizing performance can be formed under low temperature conditions without performing post-treatment for curing the film.
Material for planarization film and planarization film
The material for a planarization film of the present invention is a material for a planarization film for planarizing a concave-convex surface of a substrate, comprising
Selected from the group consisting of
Monosilane represented by the formula (1),
disiloxane represented by the formula (2), and
cyclosiloxanes represented by formula (3)
Trisiloxane represented by formula (4)
One or more organosilane compounds from the group consisting of, and
an oxidizing agent.
Here, the monosilane represented by formula (1), the disiloxane represented by formula (2), the cyclosiloxane represented by formula (3), and the trisiloxane represented by formula (4) are the same as those defined and preferred ranges described in the above-mentioned organosilane compound, and therefore, the description thereof will be omitted.
Here, the material for the planarizing film preferably further contains one or more selected from the group consisting of alcohol and water, in addition to the organosilane compound.
The material for a planarizing film of the present invention is preferably used for forming an organic electroluminescent element. The obtained planarizing film has excellent flatness and high productivity, and is therefore useful in the formation of an organic electroluminescent element. Further, since annealing is not required in the production of the planarizing film as described above, the planarizing film is useful for the purpose of planarizing the organic electroluminescent element.
The planarization film of the present invention contains at least an organosilane compound component derived from the material for planarization film. Here, the carbon concentration in the planarizing film is preferably 12 atomic% or less. In particular, a silicon oxide film having a low carbon concentration in the film has very high light transmittance, and is therefore useful as an optical member or a display.
Here, the planarizing film is preferably an unannealed product. Since annealing treatment is not required, it is useful to produce a planarizing film which can be applied to an object having low heat resistance. According to the material for a planarizing film of the present embodiment, a planarizing film excellent in flatness can be produced on a substrate having low heat resistance, for example, a plastic substrate. As a flattened film of an unannealed material, the volume shrinkage is reduced and the shrinkage stress is small. Further, as a planarized film of an unannealed material, the effect of annealing on a substrate on which the planarized film is formed can be reduced. Therefore, whether the planarized film is an unannealed product can be discriminated by observing the trace of volume shrinkage, observing the influence of shrinkage stress, or observing the influence of annealing on the substrate.
Fig. 1 is a schematic cross-sectional view of a substrate having a concave-convex surface, a silicon wafer with a line and space pattern, for forming a planarizing film according to an embodiment of the present invention, showing a state before forming the planarizing film. Fig. 2 is a schematic cross-sectional view of a substrate having a concave-convex surface, i.e., a silicon wafer having a line-and-space pattern, for forming a planarizing film according to an embodiment of the present invention, showing a state after the planarizing film is formed.
As shown in fig. 2, the planarizing film 2 planarizes the uneven surface 11 of the substrate 1 such as a silicon wafer having a line-and-space pattern. That is, as shown in fig. 2, the upper surface of the planarizing film 2 after the planarizing film 2 is formed is planarized.
Electronic device, coating film (use of planarization film) >, and method for producing the same
The planarizing film is formed for the purpose of filling a groove in the substrate, for the purpose of planarizing the surface by filling the periphery of a structure protruding on the substrate, particles, or the like. Therefore, the use of the planarizing film is not particularly limited, and for example, the planarizing film can be used for coating films, various electronic devices, and the like.
That is, the electronic device of the present invention includes the planarization film. Here, the electronic device may be provided with an organic electroluminescent element. The coating film of the present invention includes the above-described planarizing film.
Here, the coating film includes a planarizing film on the surface of the resin base material. Examples of the resin base material include: polyethylene terephthalate, cyclic olefin polymers, polyacrylates, polycarbonates, polyethylene, polymethyl methacrylate, polyetheretherketone, polyethylene naphthalate, polyetherimides, polyimides, and triacetylcellulose, and the like.
Further, as the electronic device, there may be mentioned: a multilayer printed circuit board; various displays such as Thin Film Transistor (TFT) type liquid crystal display elements and organic electroluminescent elements; photoelectric conversion elements such as solar cells and image pickup elements; various sensors such as a photosensor, a temperature sensor, a contact sensor, and a pressure sensor; an IC (integrated circuit ) card; RFID (radio frequency identifier ); etc.
The planarization film of the present invention does not require annealing treatment in the production thereof, and therefore can be applied to a case where planarization is performed for a substrate or structure having low heat resistance such as a plastic substrate or an organic electroluminescent element. The planarizing film of the present invention has excellent light transmittance, and thus can be suitably used for optical elements such as OLEDs and OLED displays.
Examples
Hereinafter, the present invention will be described in further detail with reference to examples, but the present invention is not limited to these examples.
A planarization film was formed on a substrate using a conventional CVD apparatus for forming a film by a capacitive coupling PECVD method.
Here, as a base material, i.e., a film-forming substrate, a silicon wafer having a diameter of 200mm and a thickness of 725 μm and having a line-and-space pattern was used. After forming a planarization film on the silicon wafer, a cross-sectional image of a portion where the line and gap pattern was formed was observed, thereby evaluating planarization performance.
AS a film formation temperature at the time of forming the planarizing film, vacuum thermal paper 9MC manufactured by AS ONE corporation is stuck to the surface of the film formation substrate serving AS a film formation surface, and a temperature indication value after film formation is used. The temperature indication value shows the highest reached temperature in film formation.
In the evaluation of the planarization performance of the planarization film, a planarization rate represented by the following formula was used.
Planarization ratio (%) = {1- (height of a slope between a line portion and a gap portion after formation of a planarizing film/height of a slope between a line portion and a gap portion before formation of a planarizing film) } ×100
The height of the break between the line portion and the gap portion before and after film formation was flattened, and a cross-sectional image of the film was taken using a field emission scanning electron microscope (FE-SEM) JSM-7600F manufactured by japan electronics company and estimated.
The planarization rate is an average value of measurement at two positions.
The film thickness of the planarized film was evaluated by taking a cross-sectional image of the film using a field emission scanning electron microscope (FE-SEM) (model: JSM-7600F, manufactured by Japanese electric Co., ltd.).
The film composition of the flattened film was analyzed by X-ray photoelectron spectroscopy analysis device (XPS) (ULVAC-PHI Co., ltd.; model: PHI5000 Versa probe II).
The elastic modulus and hardness of the flattened film were measured by a nanoindentation method using a supermicro durometer (model: nano indicator G200X information 50, manufactured by Korea Co., ltd.) to obtain data in the depth direction for reducing the influence of the base material, and a load displacement curve was calculated from the obtained load displacement curve. Here, as a indenter attached to the ultra-fine hardness tester, a triangular pyramid indenter made of diamond was used.
EXAMPLE 1 film formation of planarized film Using isopropyl dimethoxy vinyl silane and oxygen
Isopropyl dimethoxy vinylsilane (organosilane compound) is synthesized by the method described in japanese patent No. 4438385. Next, the obtained isopropyl dimethoxy vinylsilane and oxygen (oxidizing agent) were supplied to a film forming chamber, and a planarizing film was formed on a silicon wafer having a line and space pattern as a substrate by a PECVD method under the film forming conditions shown below. During film formation, cooling water is circulated inside the substrate stage in the film formation chamber to cool the substrate stage. The film formation temperature (surface temperature of the substrate at the time of film formation) of the planarizing film at this time is at least normal temperature (about 20 ℃) and less than 40 ℃. The line and gap patterns as shown in fig. 1 were formed as the uneven surface 11 on the surface of the silicon wafer as the substrate, the widths of the line portions 11a of the uneven surface 11 of the substrate 1 were 2 μm, the widths of the gap portions 11b were 1 μm, and the height of the break between the line portions 11a and the gap portions 11b was 2 μm.
< film Forming Condition >
Supply flow rate of isopropyl dimethoxy vinylsilane: 14sccm
Oxygen supply flow rate: 20sccm
Helium supply flow rate: 50sccm
Pressure of film forming chamber: 133.3Pa
Type of power supply of PECVD apparatus: RF power supply
Power frequency: 13.56MHz
And (3) power output: 80W (applied power density to electrode: 0.25W/cm) 2 )
Type of plasma source of PECVD apparatus: capacitively coupled plasma
Film formation time: for 5 minutes
The film thickness of the obtained planarized film was 4. Mu.m. Further, the planarization rate based on the planarization film was 100%. The composition of the resulting planarized film was: silicon (Si) was 33 atomic%, oxygen (O) was 56 atomic%, and carbon (C) was 11 atomic%. The elastic modulus of the obtained flattened film was 6GPa and the hardness was 0.7GPa.
The obtained silicon wafer with the line and space patterns after the planarization film was formed was observed by an electron microscope. Fig. 3 is an electron micrograph showing a cross section of a silicon wafer with line and space patterns after the planarization film of example 1 was formed. As shown in fig. 3, it is known that the uneven surface 11 of the silicon wafer serving as the substrate 1 is planarized by the planarization film 2.
Comparative example 1 film formation of planarized film Using t-butyltriethoxysilane and oxygen
Based on K.Lin, R.J.Wiles, C.B.Kelly, G.H.M.Davies, G.A.Molander, ACS Catalysis, volume 7, pages 5129 to 5133, t-butyltriethoxysilane (organosilane compound) was synthesized by the method described in 2017. Next, the obtained t-butyltriethoxysilane and oxygen (oxidizing agent) were supplied to a film forming chamber, and a planarizing film was formed on the same silicon wafer with the line and space pattern as in example 1 by the PECVD method under the film forming conditions shown below. The type of plasma source, the power frequency, the power output, and the cooling of the substrate table, which are the power source of the PECVD apparatus, were set as in example 1. The film forming temperature (surface temperature of the substrate at the time of film forming) is not less than normal temperature and less than 40 ℃.
< film Forming Condition >
Supply flow rate of t-butyltriethoxysilane: 16sccm
Oxygen supply flow rate: 20sccm
Helium supply flow rate: 20sccm
Pressure of film forming chamber: 133.3Pa
Film formation time: for 5 minutes
The film thickness of the obtained planarized film was 1. Mu.m. Further, the planarization rate based on the planarization film was 0%.
Description of the reference numerals
1. Substrate material
11. Concave-convex surface
11a line part
11b gap portion
2. Flattening film

Claims (18)

1. A method for manufacturing a planarizing film, characterized in that,
The manufacturing method comprises forming a planarization film for planarizing the concave-convex surface by PECVD (plasma-enhanced chemical vapor deposition) method from a material for the planarization film on a substrate having the concave-convex surface,
the material for a planarization film comprises:
an organosilane compound having an unsaturated aliphatic hydrocarbon group bonded to a Si atom; and
the oxidizing agent is used as an oxidizing agent,
the formation of the planarizing film is performed by sequentially or simultaneously performing formation and curing of an uncured film derived from the material for planarizing film on the substrate,
both the formation and curing of the uncured film are performed by chemical reactions excited by plasma.
2. The method for producing a planarizing film according to claim 1, wherein two or more reactive groups in the organosilane compound are bonded to Si atoms.
3. The method for producing a planarizing film according to claim 1 or 2, wherein the material for a planarizing film further contains alcohol or water.
4. The method for manufacturing a planarizing film according to claim 1 or 2, wherein the material for the planarizing film is substantially free of alcohol and water.
5. The method for manufacturing a planarizing film according to claim 1 or 2, wherein the formation and curing of the uncured film are performed in a single process.
6. The method for producing a planarizing film according to claim 1 or 2, wherein a surface temperature of the substrate at the time of forming the planarizing film is 300 ℃ or lower.
7. The method for producing a planarizing film according to claim 1 or 2, wherein an atmospheric pressure at the time of forming the planarizing film is in a range of 0.01Pa or more and 101325Pa or less.
8. The method for producing a planarizing film according to claim 1 or 2, wherein, in the formation of the planarizing film, when the flow rate of the organosilane compound is X [ sccm ], the flow rate of one or more selected from the group consisting of alcohol and water is Y [ sccm ], and the flow rate of the oxidizing agent is Z [ sccm ], the ratio of Y to X, that is, the Y/X ratio is 20 or less, and the ratio of Z to X, that is, the Z/X ratio is 20 or less.
9. A material for a planarization film for planarizing a substrate, wherein the planarization film planarizes the uneven surface of the substrate,
the material for the planarization film contains:
one or more organosilane compounds selected from the group consisting of monosilane represented by formula (1), disiloxane represented by formula (2), cyclosiloxane represented by formula (3), and trisiloxane represented by formula (4); and
The oxidizing agent is used as an oxidizing agent,
SiR 1 a R 2 b R 3 (4-(a+b)) formula (1)
In the formula (1), the components are as follows,
R 1 alkenyl with 1-10 carbon atoms and alkynyl with 1-10 carbon atoms;
R 2 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 3 phenyl or benzyl, or straight-chain, branched or cyclic alkyl having 1 to 10 carbon atoms;
a is an integer of 1 to 4;
b is an integer of 0 to 3;
a+b is an integer of 2 to 4,
in the formula (2), the amino acid sequence of the compound,
R 4 alkenyl with 1-10 carbon atoms and alkynyl with 1-10 carbon atoms;
R 5 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 6 is phenyl or benzyl, or is a straight chain having 1 to 10 carbon atomsAlkyl groups in a branched, or cyclic form;
c is an integer of 1 to 3;
d is an integer of 0 to 2;
c+d is an integer of 1 to 3,
in the formula (3), the amino acid sequence of the compound,
R 7 alkenyl with 1-10 carbon atoms and alkynyl with 1-10 carbon atoms;
R 8 an alkoxy group having 1 to 10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 9 phenyl or benzyl, or straight-chain, branched or cyclic alkyl having 1 to 10 carbon atoms;
e is 1 or 2;
f is 0 or 1;
e+f is 1 or 2;
n is an integer of 2 to 6,
in the formula (4), the amino acid sequence of the compound,
R 10 and R is 13 Alkenyl groups having 1 to 10 carbon atoms and alkynyl groups having 1 to 10 carbon atoms, respectively;
R 11 and R is 14 Respectively an alkoxy group with 1-10 carbon atoms, a hydroxyl group or a hydrogen atom;
R 12 And R is 15 Phenyl or benzyl, or straight-chain, branched or cyclic alkyl having 1 to 10 carbon atoms;
g is an integer of 0 to 3;
i is an integer of 0 to 2;
g+i is an integer of 1 to 5;
h is an integer of 0 to 3;
j is an integer of 0 to 2;
g+h is an integer of 0 to 3;
i+j is an integer of 0 to 2.
10. The material for a planarizing film according to claim 9, wherein the material for a planarizing film is used for formation of an organic electroluminescent element.
11. The material for a planarizing film according to claim 9, wherein the material for a planarizing film further contains alcohol or water.
12. The material for a planarizing film according to claim 9, wherein the material for a planarizing film contains substantially no alcohol or water.
13. A planarizing film comprising a component derived from at least the organosilane compound in the material for planarizing film according to any one of claims 9 to 12.
14. The planarizing film of claim 13 wherein the planarizing film is an unannealed product.
15. The planarizing film of claim 13 wherein a carbon concentration in the planarizing film is 12 atomic% or less.
16. An electronic device comprising the planarizing film according to claim 13.
17. The electronic device according to claim 16, wherein the electronic device is further provided with an organic electroluminescent element.
18. A coating film comprising the planarization film according to claim 13.
CN202280037854.XA 2021-05-31 2022-05-30 Method for producing planarizing film, material for planarizing film, and planarizing film Pending CN117355632A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021091950 2021-05-31
JP2021-091950 2021-05-31
PCT/JP2022/021881 WO2022255290A1 (en) 2021-05-31 2022-05-30 Method for manufacturing planarizing film, planarizing film material, and planarizing film

Publications (1)

Publication Number Publication Date
CN117355632A true CN117355632A (en) 2024-01-05

Family

ID=84323250

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280037854.XA Pending CN117355632A (en) 2021-05-31 2022-05-30 Method for producing planarizing film, material for planarizing film, and planarizing film

Country Status (5)

Country Link
JP (1) JPWO2022255290A1 (en)
KR (1) KR20240016956A (en)
CN (1) CN117355632A (en)
TW (1) TW202311274A (en)
WO (1) WO2022255290A1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08111412A (en) * 1994-10-06 1996-04-30 Fujitsu Ltd Manufacturing for semiconductor device
JPH0927490A (en) * 1995-07-10 1997-01-28 Canon Inc Method of forming deposition film
JPH09148285A (en) * 1995-11-27 1997-06-06 Sony Corp Chemical-mechanical polishing particles and manufacture of semiconductor device
JPH1154504A (en) * 1997-08-04 1999-02-26 Sony Corp Forming method of laminated insulator film and semiconductor device using the same
JP4438385B2 (en) * 2002-11-28 2010-03-24 東ソー株式会社 Insulating film material, organosilane compound manufacturing method, insulating film, and semiconductor device using the same
JP2012231007A (en) 2011-04-26 2012-11-22 Elpida Memory Inc Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20240016956A (en) 2024-02-06
JPWO2022255290A1 (en) 2022-12-08
TW202311274A (en) 2023-03-16
WO2022255290A1 (en) 2022-12-08

Similar Documents

Publication Publication Date Title
KR102242461B1 (en) Compositions and methods for the deposition of silicon oxide films
JP4678304B2 (en) Method for manufacturing silicon oxide film
US6649540B2 (en) Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
US6440876B1 (en) Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereof
CN101690420B (en) Boron nitride and boron nitride-derived materials deposition method
CN111373072B (en) Composition for vapor deposition of silicon-containing film and method for producing silicon-containing film using same
JP6079842B2 (en) Carbon-containing silicon oxide film, sealing film and use thereof
KR20180087450A (en) Compositions for the deposition of silicon-containing films and methods for using them
Won et al. Growth and electrical properties of silicon oxide grown by atomic layer deposition using Bis (ethyl-methyl-amino) silane and ozone
CN103540908A (en) Method of depositing silicone dioxide films
TW200409738A (en) Low dielectric constant material and method of processing by CVD
US8513448B2 (en) Cyclic siloxane compound, a material for forming Si-containing film, and its use
CN1698189A (en) Method to improve cracking thresholds and mechanical properties of low-k dielectric material
CN101671816A (en) Method for depositing si-containing film, insulator film, and semiconductor device
CN117355632A (en) Method for producing planarizing film, material for planarizing film, and planarizing film
TWI730226B (en) Composition for depositing silicon-containing thin film and method for manufacturing silicon-containing thin film using the same
Seo et al. Organic and organic–inorganic hybrid polymer thin films deposited by PECVD using TEOS and cyclohexene for ULSI interlayer-dielectric application
WO2022230944A1 (en) Planarizing film manufacturing method, planarizing film material, and planarizing film
CN113785085A (en) Silicon oxide film, material for gas barrier film, and method for producing silicon oxide film
WO2012026464A1 (en) Sealing film material, sealing film and use thereof
Ma et al. Synthesis, characterization, and thermal properties of novel silicon 1, 1, 3, 3‐tetramethylguanidinate derivatives and use as single‐source chemical vapor deposition precursors
JP4341560B2 (en) Si-containing film forming material, Si-containing film, method for producing Si-containing film, and semiconductor device
KR101770718B1 (en) Silicon precursor and manufacturing method of silicon-containing thin film using thereof
JP2011111635A (en) Sealing film composed of silicon oxide film containing carbon, and its application
TW202409330A (en) Gas barrier film material, silicon oxide film, and production method of silicon oxide film

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination