CN117353148A - Linear Fabry-Perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity - Google Patents
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06821—Stabilising other output parameters than intensity or frequency, e.g. phase, polarisation or far-fields
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
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Abstract
The invention discloses a linear Fabry-Perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity, which comprises a semiconductor laser and a linear Fabry-Perot cavity, wherein the semiconductor laser is used for emitting laser to the linear Fabry-Perot cavity to generate reflected light and resonant light; the linear Fabry-Perot cavity comprises a cavity incidence mirror and a cavity emergent mirror with asymmetric reflectivity, so that resonance light is dominant in an optical feedback process, and the emission frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity. According to the laser power control method, the cavity incidence mirror and the cavity exit mirror of the linear Fabry-Perot cavity are set to be asymmetric in reflectivity, so that resonance light plays a dominant role in the feedback process, the emitting frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity, and the laser power emitted into the linear Fabry-Perot cavity by the semiconductor laser is further enhanced.
Description
Technical Field
The disclosure belongs to the technical field of laser spectrum, and particularly relates to a linear Fabry-Perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity.
Background
Trace gas detection plays a key role in various fields, including monitoring and evaluating environmental quality to formulate pollution abatement strategies, ensuring production safety of chemical and energy industries and reducing environmental impact, early diagnosis and prevention of diseases in the medical field by methods such as breath analysis, and important tools for exploring leading-edge problems of new materials, new energy and life sciences in the scientific research field. As an analytical means with high sensitivity, high selectivity, non-contact and non-destructive properties, laser spectroscopy relies on the interaction of laser light with a gas, wherein the sensitivity of laser absorption spectroscopy is related to the absorption length, whereas the sensitivity of laser raman spectroscopy is affected by the laser power. To more effectively apply these two spectroscopy methods to trace gas detection, researchers have utilized fabry-perot cavity enhancement techniques: when the incident laser frequency resonates with a certain longitudinal mode frequency of the Fabry-Perot cavity, the technology can obviously improve the path length acting with gas and the power of laser, so that the detection sensitivity of the laser spectrum technology is effectively improved.
However, such resonance at frequency is easily disturbed by the external environment, resulting in frequency losing lock, unstable accumulation of incident light in the cavity, and unstable interaction of light and gas, and finally affecting repeatability of detection result, and thus frequency locking technology is required. Currently, there are mainly two frequency locking techniques, the first is the PDH (round-Drever-Hall) technique, which requires the use of expensive narrow linewidth lasers and complex and fast servo systems. Another popular technique is optical feedback frequency locking, mainly by introducing the intracavity resonant light back into the low cost semiconductor laser, and combining a slow servo system to narrow and stabilize the linewidth of the laser while locking its frequency to the mode frequency of the fabry-perot cavity. One key technical difficulty is that the direct reflection of light in front of the cavity will be returned to the laser interior along with the resonating light. Interference cancellation of the two optical fields eventually leads to failure of the optical feedback. To address this problem, US patent application 5432610 proposes a solution for locking a semiconductor laser to a V-shaped fabry-perot cavity, which cavity is made up of three high reflectivity mirrors, where the cavity input mirror is at an angle to the incident light, so that the direct reflection cannot return to the laser. However, the loss of such V-shaped cavities is relatively large and parity modes exist. In literature (analysis, 2012, 137, 20, 4669-4676, cavity-enhanced Raman spectroscopy with optical feedback cw diode lasers for gas phase analysis and spectroscopy), hippler proposes a solution for locking a semiconductor laser to a linear fabry-perot Cavity made up of two lenses, the return of the direct reflection to the laser being prevented by placing two optical isolators between the laser and the Cavity; in the literature (appl. Phys. B,2015, 120, 329-339, optical-feedback cavity-enhanced absorption spectroscopy in a linear cavity: model and experiments), manfred uses spatial pattern mismatching to make the two lights have a significant difference in spot size, and further a small aperture stop is placed between the laser and the linear Fabry-Perot cavity to block part of the direct reflection light while retaining most of the resonant light. However, although the two schemes apply the linear Fabry-Perot cavity with low loss, other unnecessary loss is introduced, including the space coupling loss generated by the mode mismatching and the incidence loss generated by blocking part of the incident laser by the diaphragm (or the space filter), and the system construction is complex. The Chinese patent application CN113178774A proposes to effectively eliminate the adverse effect of the direct reflection on the optical feedback by controlling the phase of the optical feedback, and does not need other additional direct reflection elimination measures, but the scheme has a narrow application range and high requirements on the performance of the laser, and most of the past researches show that the adverse effect of the direct reflection cannot be completely eliminated only by adjusting the phase of the feedback.
Therefore, the research on the device and the method for locking the Fabry-Perot cavity optical feedback frequency, which are simpler, have no extra loss and have universality, has great value.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a linear Fabry-Perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity, which leads resonant light to take a dominant role in an optical feedback process by setting the reflectivity of a cavity input mirror of a linear Fabry-Perot cavity to be lower than the reflectivity of an output mirror, thereby effectively eliminating the adverse effect of the reflected light on the optical feedback process.
In order to achieve the above object, the present disclosure provides the following technical solutions:
an optical feedback frequency locking device of a linear Fabry-Perot cavity based on asymmetric cavity mirror reflectivity comprises a semiconductor laser and a linear Fabry-Perot cavity, wherein,
the semiconductor laser is used for emitting laser to the linear Fabry-Perot cavity to generate reflected light and resonance light;
the linear Fabry-Perot cavity comprises a cavity incidence mirror and a cavity emergent mirror with asymmetric reflectivity, so that resonance light is dominant in an optical feedback process, and the emission frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity.
Preferably, the reflectivity of the cavity entrance mirror is less than the reflectivity of the cavity exit mirror.
Preferably, the apparatus further comprises a feedback rate control module for adjusting the polarization states of the reflected light and part of the resonating light.
Preferably, the device further comprises a space coupling module, which is used for transforming the laser light spot emitted by the semiconductor laser to coincide with the fundamental mode waist spot of the linear Fabry-Perot cavity.
Preferably, the apparatus further comprises a feedback phase adjustment module for adjusting the feedback phase of the partially resonating light and the reflected light.
Preferably, the feedback phase adjusting module comprises a photoelectric detector, a data acquisition card, a high-voltage amplifier and piezoelectric ceramics which are connected in sequence.
Preferably, the apparatus further comprises a signal generator and a laser controller.
Compared with the prior art, the beneficial effects that this disclosure brought are: the method does not need to introduce additional optical devices or intentional mismatching of spatial modes, so that an actual system is simpler and has lower loss; and because of lower loss, the coupling between the laser and the linear Fabry-Perot cavity can be improved, and the laser power in the linear Fabry-Perot cavity is enhanced.
Drawings
Fig. 1 is a schematic structural diagram of a linear fabry-perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity according to an embodiment of the present disclosure;
fig. 2 is a schematic diagram of a system coupling frequency near a cavity mode as a function of free running frequency according to one embodiment of the present disclosure.
Detailed Description
Specific embodiments of the present disclosure will be described in detail below with reference to fig. 1 to 2. While specific embodiments of the disclosure are shown in the drawings, it should be understood that the disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It should be noted that certain terms are used throughout the description and claims to refer to particular components. Those of skill in the art will understand that a person may refer to the same component by different names. The specification and claims do not identify differences in terms of components, but rather differences in terms of the functionality of the components. As used throughout the specification and claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. The description hereinafter sets forth the preferred embodiments for carrying out the present disclosure, but is not intended to limit the scope of the disclosure in general, as the description proceeds. The scope of the present disclosure is defined by the appended claims.
For the purposes of promoting an understanding of the embodiments of the disclosure, reference will now be made to the embodiments illustrated in the drawings and specific examples, without the intention of being limiting the embodiments of the disclosure.
In one embodiment, as shown in fig. 1, the present disclosure provides a linear fabry-perot cavity optical feedback frequency locking device based on asymmetric cavity mirror reflectivity, comprising a semiconductor laser and a linear fabry-perot cavity, wherein,
the semiconductor laser is used for emitting laser to the linear Fabry-Perot cavity to generate reflected light and resonance light;
the linear Fabry-Perot cavity comprises a cavity incidence mirror and a cavity emergent mirror with asymmetric reflectivity, so that resonance light is dominant in an optical feedback process, and the emission frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity.
In this embodiment, after the laser emitted by the semiconductor laser enters the linear fabry-perot cavity, part of the laser is reflected by the cavity incident mirror to form reflected light, and the reflected light returns to the semiconductor laser along the original incident light path; the other part of laser enters the linear Fabry-Perot cavity to be reflected for multiple times to form multi-beam interference, and the multi-beam interference is accumulated to form resonance light, wherein part of resonance light leaks from the cavity incidence mirror and returns to the semiconductor laser along an original incidence light path to form optical feedback together with the reflected light; and the other part of the resonance light passes through the linear Fabry-Perot cavity and is detected by the photoelectric detector. In addition, since the linewidth of the reflected light is the same as that of the laser, the linewidth of the laser cannot be improved after the reflected light is returned to the laser, and even the laser spectrum is disturbed. The line width of the resonance light is narrow, and after the resonance light returns to the laser, the original line width of the laser can be effectively compressed, so that the coupling between the laser and the cavity can be improved. Therefore, the cavity incidence mirror and the cavity exit mirror with asymmetric reflectivity are arranged, so that resonant light plays a dominant role in the feedback process, the emitting frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity, the linewidth of the laser is further narrowed, the coupling between the laser and the cavity is improved, and the laser power emitted into the linear Fabry-Perot cavity by the semiconductor laser is enhanced.
In another embodiment, the cavity entrance mirror has a reflectivity less than a reflectivity of the cavity exit mirror.
In this embodiment, the cavity entrance mirror is set as a plane mirror, and the cavity exit mirror is set as a concave mirror. The reflectivity of the cavity incidence mirror needs to be lower than that of the cavity emergent mirror, so that adverse effects of reflected light on laser emitted by the semiconductor laser in the optical feedback process can be effectively eliminated, resonance light is dominant in the optical feedback process, and the emergent laser frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity.
The present disclosure now embodies the principles described above:
the reflectivity of the cavity incident mirror is denoted as R 1 Incident laser is incident into the linear Fabry-Perot cavity along the cavity incidence mirror; the reflectivity of the cavity output mirror is denoted as R 2 The method comprises the steps of carrying out a first treatment on the surface of the Without optical feedback, the frequency of the incident laser is recorded as the free-running frequency omega 0 The method comprises the steps of carrying out a first treatment on the surface of the With optical feedback, the frequency of the incident laser light is denoted as the coupling frequency ω. Without optical feedback, the coupling frequency ω is always equal to the free-running frequency ω 0 The method comprises the steps of carrying out a first treatment on the surface of the Under the condition of weak optical feedback, the two are no longer equal, and the following relationship is satisfied:
ω 0 ＝ω+Kβ{αRe(T (ω) )+Im(T (ω) )} (1)
wherein K represents a feedback coupling pre-factor; beta represents optical feedback efficiency, i.e. the ratio of the optical power returned to the laser to the optical power emitted by the laser; alpha represents a henry factor; t (T) (ω) Indicating the distance L between the laser and the Fabry-Perot cavity 0 The feedback light field at the time, expressed as:
wherein i represents an imaginary unit, c represents a light velocity, R (ω) Representing the feedback light field transformed via the linear Fabry-Perot cavity, R assuming the incident light field is "1" (ω) Represented by the formula:
wherein L represents the length of the linear Fabry-Perot cavity, namely the distance between the cavity incidence mirror and the cavity exit mirror; in the formula (3), the first term on the right of the equal sign represents reflected light, wherein the negative sign represents half-wave loss; the second term on the right of the equal sign represents the resonant light;
substituting the formula (2) and the formula (3) into the formula (1) to obtain:
when R is 1 ＝R 2 When the coupling frequency omega is the center frequency of a certain mode of the Fabry-Perot cavity, the reflected light and the resonant light have equal amplitude and opposite phases, interference between the reflected light and the resonant light is eliminated, no feedback light is fed back into the laser, and therefore no optical feedback frequency locking exists; but let R 2 Remain unchanged and reduce R 1 Or let R 1 Unchanged and increase R 2 The resonant light can be made dominant in the optical feedback. Because the line width of the resonance light is narrow, the original line width of the laser can be effectively compressed after the resonance light is fed back to the laser, so that the coupling between the laser and the linear Fabry-Perot cavity is reversely improved, and the emergent laser frequency of the semiconductor laser can be locked to the mode frequency of the linear Fabry-Perot cavity (the phenomenon of frequency locking is shown in fig. 2, and as the free running frequency gradually increases near the mode frequency of a certain cavity, a frequency locking range exists, namely, the frequency range included by two broken lines in fig. 2, the coupling frequency is almost unchanged in the frequency range, and the laser can work well at a certain mode frequency of the linear Fabry-Perot cavity at the moment).
In another embodiment, the apparatus further comprises a feedback rate control module for adjusting the polarization states of the reflected light and the partially resonating light.
In this embodiment, the feedback rate control module includes a polarization beam splitter prism and a quarter wave plate, where the polarization beam splitter prism is used to select a polarization state of an incident laser beam, and the quarter wave plate is used to rotate a polarization state of reflected light and resonant light, so that efficiency of the reflected light and resonant light transmitting through the polarization beam splitter prism can be adjusted, that is, the feedback rate is adjusted.
In another embodiment, the device further comprises a spatial coupling module, which is used for transforming the laser light spot emitted by the semiconductor laser to coincide with the fundamental mode waist spot of the linear Fabry-Perot cavity.
In this embodiment, the spatial coupling module includes a pair of right-angle prisms and a lens group, where the right-angle prisms are used to convert elliptical light spots emitted by the semiconductor laser into circular light spots, so as to improve the coupling efficiency of the lens group and further reduce the spatial coupling loss; the lens group can enable the circular light spot to coincide with the fundamental mode waist spot of the linear Fabry-Perot cavity, so that a higher-order mode is prevented from being excited (the phase of the higher-order mode is disordered, the requirement of optical feedback on feedback phase is not met, the frequency locking of a laser is not facilitated, the maximization of laser power in the cavity is also not facilitated), and meanwhile, the space coupling loss when laser is injected into the linear Fabry-Perot cavity is minimized.
In another embodiment, the apparatus further comprises a feedback phase adjustment module for adjusting the feedback phase of the partially resonating light and the reflected light.
In this embodiment, the feedback phase adjusting module includes a photo detector, a data acquisition card, a high voltage amplifier and a piezoelectric ceramic which are sequentially connected. The laser enters the linear Fabry-Perot cavity, and the other part of resonance light formed by accumulation in the linear Fabry-Perot cavity is detected by the photoelectric detector through the linear Fabry-Perot cavity and is collected by the data collection card (wherein the collection card is controlled by the software LabVIEW), the asymmetry of a transmission cavity mode signal can be obtained through processing the collection signal, an error signal is output according to the asymmetry, the error signal is amplified by the high-voltage amplifier and then drives the piezoelectric ceramic to adjust the stretching length of the piezoelectric ceramic, so that the reflector adhered to the piezoelectric ceramic moves forwards (the placement position of the reflector adhered with the piezoelectric ceramic forms 45 degrees with the laser propagation direction because the reflector and the piezoelectric ceramic are not transparent, the reflected laser propagation direction forms 90 degrees with the original propagation direction, the stretching length of the piezoelectric ceramic is changed, the reflector moves forwards, the feedback phase is changed), the distance between the laser and the linear Fabry-Perot cavity is changed, the phase of the resonance light is changed, the optical feedback is further realized, the feedback phase of the reflection light and the resonance light is adjusted, and the laser emission light of the semiconductor laser can be locked to the center frequency of the linear Fabry-Perot cavity, and the optimal coupling effect of the linear Fabry-Perot cavity is achieved.
In another embodiment, the apparatus further comprises a signal generator and a laser controller.
In this embodiment, the modulated signal output by the signal generator is a sawtooth wave, and the frequency is KHz level. The signal generator outputs a modulation signal to the laser controller to scan the driving current of the laser controller, and the laser controller drives the semiconductor laser to output laser.
Although the present invention has been described above with reference to exemplary embodiments, the scope of protection of the present invention is not limited to the embodiments described above. It will be apparent to persons skilled in the relevant art that various changes and modifications in form and detail can be made therein without departing from the scope and spirit of the invention. The scope of the invention is defined only by the following claims and their equivalents.
Claims (7)
1. An optical feedback frequency locking device of a linear Fabry-Perot cavity based on asymmetric cavity mirror reflectivity comprises a semiconductor laser and a linear Fabry-Perot cavity, wherein,
the semiconductor laser is used for emitting laser to the linear Fabry-Perot cavity to generate reflected light and resonance light;
the linear Fabry-Perot cavity comprises a cavity incidence mirror and a cavity emergent mirror with asymmetric reflectivity, so that resonance light is dominant in an optical feedback process, and the emission frequency of the semiconductor laser is locked to the mode frequency of the linear Fabry-Perot cavity.
2. The device of claim 1, wherein preferably the reflectivity of the cavity entrance mirror is less than the reflectivity of the cavity exit mirror.
3. The apparatus of claim 1, wherein the apparatus further comprises a feedback rate control module for adjusting the polarization states of the reflected light and the partially resonating light.
4. The apparatus of claim 1, wherein the apparatus further comprises a spatial coupling module for transforming a laser spot emitted by the semiconductor laser to coincide with a fundamental mode waist of the linear fabry perot cavity.
5. The apparatus of claim 1, wherein the apparatus further comprises a feedback phase adjustment module for adjusting a feedback phase of the partially resonating light and the reflected light.
6. The device of claim 5, wherein the feedback phase adjustment module comprises a photodetector, a data acquisition card, a high voltage amplifier, and a piezoelectric ceramic connected in sequence.
7. The apparatus of claim 1, wherein the apparatus further comprises a signal generator and a laser controller.
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