CN117352222A - Power cable, connector assembly, terminal assembly and method for forming reconstituted semiconductive layer - Google Patents
Power cable, connector assembly, terminal assembly and method for forming reconstituted semiconductive layer Download PDFInfo
- Publication number
- CN117352222A CN117352222A CN202210752243.5A CN202210752243A CN117352222A CN 117352222 A CN117352222 A CN 117352222A CN 202210752243 A CN202210752243 A CN 202210752243A CN 117352222 A CN117352222 A CN 117352222A
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- Prior art keywords
- layer
- exposed
- power cable
- reconstituted
- semiconducting
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- 238000000034 method Methods 0.000 title claims abstract description 11
- 239000002390 adhesive tape Substances 0.000 claims abstract description 58
- 238000004804 winding Methods 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 26
- 239000012212 insulator Substances 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 10
- 238000002788 crimping Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/22—Sheathing; Armouring; Screening; Applying other protective layers
- H01B13/26—Sheathing; Armouring; Screening; Applying other protective layers by winding, braiding or longitudinal lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
- H01B9/027—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients composed of semi-conducting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/025—Contact members formed by the conductors of a cable end
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/10—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation effected solely by twisting, wrapping, bending, crimping, or other permanent deformation
- H01R4/18—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation effected solely by twisting, wrapping, bending, crimping, or other permanent deformation by crimping
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cable Accessories (AREA)
Abstract
The invention discloses a power cable, a connector assembly, a terminal assembly and a method for forming a reconstituted semiconductive layer. The power cable includes: the cable comprises a conductor core, an insulating layer wrapped on the conductor core, a shielding layer wrapped on the insulating layer and an outer sheath layer wrapped on the shielding layer. The power cable has a connection end with an exposed conductor core, an insulating layer and a shielding layer. And winding a semiconducting film adhesive tape on the exposed shielding layer and insulating layer to form a reconstituted semiconducting layer extending continuously along the axial direction. The two ends of the reconstituted semiconducting layer are respectively wrapped on the exposed shielding layer and the insulating layer, so that the end face of the exposed shielding layer is completely wrapped in the reconstituted semiconducting layer. Therefore, the invention can effectively prevent the electric field concentration in the end surface area of the shielding layer, and the end surface area of the shielding layer does not need to be finely polished, thereby saving time and labor and being simple and convenient to operate.
Description
Technical Field
The present invention relates to a power cable, a power cable intermediate joint assembly comprising the power cable, a power cable termination assembly comprising the power cable and a method of forming a reconstituted semiconductive layer on a connection end of a power cable.
Background
The power cable generally includes a conductor core, an insulating layer wrapped around the conductor core, a shielding layer wrapped around the insulating layer, and an outer jacket layer wrapped around the shielding layer. Therefore, when the power cable is connected, a section of the outer sheath layer of the power cable must be removed first to expose a section of the shielding layer, then a portion of the exposed shielding layer is removed to expose a section of the insulating layer, and finally a portion of the exposed insulating layer is removed to expose a section of the conductor core.
However, in order to prevent electric field concentration at the end face of the exposed shielding layer, it is necessary to ensure that the end face of the exposed shielding layer is flat and smooth, and cannot have any burrs or protrusions, which would otherwise cause electric field concentration, resulting in breakdown of the insulation layer of the power cable. This requires fine sanding with sandpaper from coarse to fine, is very time-consuming and laborious, and requires a high skill level for the operator.
Disclosure of Invention
The present invention is directed to solving at least one of the above-mentioned problems and disadvantages of the prior art.
According to one aspect of the present invention, there is provided a power cable comprising: the cable comprises a conductor core, an insulating layer wrapped on the conductor core, a shielding layer wrapped on the insulating layer and an outer sheath layer wrapped on the shielding layer. The power cable has a pretreated connection end with an exposed conductor core, an exposed insulating layer and an exposed shielding layer. And winding a semi-conductive film adhesive tape on the exposed shielding layer and the insulating layer to form a reconstituted semi-conductive layer which extends continuously along the axial direction on the exposed shielding layer and the insulating layer, wherein two ends of the reconstituted semi-conductive layer are respectively wrapped on the exposed shielding layer and the insulating layer, so that the end face of the exposed shielding layer is completely wrapped in the reconstituted semi-conductive layer.
According to an exemplary embodiment of the present invention, the semiconductive film adhesive tape has a predetermined elasticity and a predetermined tensile force is applied to the semiconductive film adhesive tape at the time of winding such that the semiconductive film adhesive tape wound on the shielding layer and the insulating layer generates a predetermined elastic tightening force in a radial direction to ensure that the wound semiconductive film adhesive tape closely adheres to the outer surfaces of the shielding layer and the insulating layer.
According to another exemplary embodiment of the present invention, the semiconductive film adhesive tape includes a substrate and a semiconductive adhesive adhered to one side surface of the substrate, and the substrate has a predetermined elasticity.
According to another exemplary embodiment of the present invention, the thickness of the semiconductive film tape is less than 0.1mm.
According to another exemplary embodiment of the present invention, the end surfaces of both ends of the reconstituted semiconductive layer are perpendicular to the axis of the power cable.
According to another exemplary embodiment of the present invention, the reconstituted semiconducting layer has a first end located on the exposed shielding layer, an end face of the first end of the reconstituted semiconducting layer being at a first predetermined distance from an end face of the exposed shielding layer such that a portion of the exposed shielding layer is encased in the reconstituted semiconducting layer.
According to another exemplary embodiment of the invention, the reconstituted semiconducting layer extends axially all the way to the root of the exposed shielding layer, so that the exposed shielding layer is completely encased in the reconstituted semiconducting layer.
According to another exemplary embodiment of the present invention, the reconstituted semiconducting layer has a second end located on the exposed insulating layer, the end face of the second end of the reconstituted semiconducting layer being at a second predetermined distance from the end face of the exposed insulating layer such that a portion of the exposed insulating layer is encased in the reconstituted semiconducting layer.
According to another exemplary embodiment of the present invention, the reconstituted semiconducting layer extends axially all the way to the end face of the exposed insulating layer, such that the exposed insulating layer is completely encased in the reconstituted semiconducting layer.
According to another exemplary embodiment of the present invention, the semiconductive film tape is wound on the exposed shielding layer and insulating layer in a half-lap manner such that axially adjacent two turns of the wound semiconductive film tape overlap each other.
According to another exemplary embodiment of the present invention, the power cable further includes: the water-blocking buffer layer is wrapped on the shielding layer; and the metal sheath layer is wrapped on the water-blocking buffer layer, the outer sheath layer is wrapped on the metal sheath layer, and the connecting end of the power cable is also provided with an exposed water-blocking buffer layer and an exposed metal sheath layer.
According to another exemplary embodiment of the present invention, the reconstituted semiconductive layer comprises: a first semiconducting film tape winding layer wound on the outer surfaces of the exposed shielding layer and insulating layer; and a second semiconducting film tape winding layer wound on an outer surface of the first semiconducting film tape winding layer.
According to another exemplary embodiment of the present invention, the first semiconducting film tape winding layer is completely encased in the second semiconducting film tape winding layer.
According to another exemplary embodiment of the present invention, the first and second semiconducting film tape winding layers are wound from a continuous length of semiconducting film tape.
According to another exemplary embodiment of the present invention, the first semiconductive film tape winding layer is wound from a starting position on the exposed shielding layer to a predetermined position on the exposed insulating layer; the second semi-conductive film tape winding layer is wound from a predetermined position on the exposed insulating layer to a termination position on the exposed shielding layer.
According to another exemplary embodiment of the present invention, the axial distance between the end position and the predetermined position is greater than the axial distance between the start position and the predetermined position, such that the first semiconducting film tape winding layer is completely wrapped in the second semiconducting film tape winding layer.
According to another aspect of the present invention, there is provided a method of forming a reconstituted semiconductive layer on a connection end of a power cable, comprising the steps of: providing a semiconductive film adhesive tape; winding the semiconductive film adhesive tape forward from a starting position on the exposed shielding layer of the power cable to a predetermined position on the exposed insulating layer; and winding the semiconductive film adhesive tape back from the predetermined position on the exposed insulating layer to a termination position on the exposed shielding layer.
According to an exemplary embodiment of the invention, the axial distance between the end position and the predetermined position is larger than the axial distance between the start position and the predetermined position.
According to another aspect of the present invention, there is provided a power cable intermediate joint assembly comprising: an intermediate head and two of the aforementioned power cables. The intermediate joint includes: cold shrink type insulators; two stress control cones disposed within and bonded to the cold shrink insulator; a stress control tube disposed within the cold shrink insulator and between the two stress control cones; and a crimp sleeve disposed in the stress control tube. The connecting ends of the two power cables are respectively inserted into the cold-shrink insulator from the two ends of the connecting terminal, the crimping sleeve is crimped on the exposed conductor cores of the two power cables, the stress control tubes are sleeved on the two ends of the exposed insulating layers of the two power cables, and the two stress control cones are respectively wrapped on the regenerated conductive layers of the two power cables.
According to another aspect of the present invention, there is provided a power cable termination assembly comprising: a connection terminal and the aforementioned power cable. The connection terminal includes: cold shrink type insulators; a stress control cone disposed within and bonded to the cold-shrink insulator; and a crimp terminal located outside the cold shrink insulator or having one end protruding into the cold shrink insulator. The connecting end of the power cable is inserted into the cold-shrink insulator of the connecting terminal, one end of the crimping terminal is crimped on the exposed conductor core of the power cable, and the stress control cone is wrapped on the reconstituted conducting layer of the power cable.
In the foregoing exemplary embodiments according to the present invention, the semiconductive film adhesive tape wrapped around the end surface region of the shielding layer can effectively prevent electric field concentration from occurring in the end surface region of the shielding layer, and thus, the present invention does not require fine grinding of the exposed end surface region of the shielding layer, which is time-saving and labor-saving, and is simple and convenient to operate.
Other objects and advantages of the present invention will become apparent from the following description of the invention with reference to the accompanying drawings, which provide a thorough understanding of the present invention.
Drawings
FIG. 1 shows a schematic diagram of a power cable according to an exemplary embodiment of the invention;
fig. 2 shows an axial cross-section of a power cable according to an exemplary embodiment of the invention;
FIG. 3 shows a schematic view of the initial position on the exposed shielding layer of the connection end of the power cable starting to wind the semiconductive film adhesive tape forward;
FIG. 4 is a schematic view showing a semi-conductive film tape being wound from an initial position on an exposed shielding layer to a predetermined position on an exposed insulating layer;
FIG. 5 shows a schematic view of winding a semiconductive film adhesive tape back from a predetermined location on an exposed insulating layer;
FIG. 6 shows a schematic view of wrapping a semiconductive film adhesive tape back from a predetermined location on an exposed insulating layer to a termination location on an exposed shielding layer;
FIG. 7 shows a schematic view of a reconstituted semiconductive layer formed on exposed shielding and insulation layers at the connection end of a power cable;
FIG. 8 shows a schematic view of a power cable intermediate joint assembly according to an exemplary embodiment of the invention;
fig. 9 shows a schematic view of a power cable termination assembly according to an exemplary embodiment of the invention.
Detailed Description
The technical scheme of the invention is further specifically described below through examples and with reference to the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of embodiments of the present invention with reference to the accompanying drawings is intended to illustrate the general inventive concept and should not be taken as limiting the invention.
Furthermore, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in the drawings in order to simplify the drawings.
According to one general technical concept of the present invention, there is provided a power cable including: the cable comprises a conductor core, an insulating layer wrapped on the conductor core, a shielding layer wrapped on the insulating layer and an outer sheath layer wrapped on the shielding layer. The power cable has a pretreated connection end with an exposed conductor core, an exposed insulating layer and an exposed shielding layer. And winding a semi-conductive film adhesive tape on the exposed shielding layer and the insulating layer to form a reconstituted semi-conductive layer which extends continuously along the axial direction on the exposed shielding layer and the insulating layer, wherein two ends of the reconstituted semi-conductive layer are respectively wrapped on the exposed shielding layer and the insulating layer, so that the end face of the exposed shielding layer is completely wrapped in the reconstituted semi-conductive layer.
According to another general technical concept of the present invention, there is provided a method of forming a reconstituted semiconductive layer on a connection end of a power cable, comprising the steps of: providing a semiconductive film adhesive tape; winding the semiconductive film adhesive tape forward from a starting position on the exposed shielding layer of the power cable to a predetermined position on the exposed insulating layer; and winding the semiconductive film adhesive tape back from the predetermined position on the exposed insulating layer to a termination position on the exposed shielding layer.
According to another general technical concept of the present invention, there is provided a power cable intermediate joint assembly including: an intermediate head and two of the aforementioned power cables. The intermediate joint includes: cold shrink type insulators; two stress control cones disposed within and bonded to the cold shrink insulator; a stress control tube disposed within the cold shrink insulator and between the two stress control cones; and a crimp sleeve disposed in the stress control tube. The connecting ends of the two power cables are respectively inserted into the cold-shrink insulator from the two ends of the connecting terminal, the crimping sleeve is crimped on the exposed conductor cores of the two power cables, the stress control tubes are sleeved on the two ends of the exposed insulating layers of the two power cables, and the two stress control cones are respectively wrapped on the regenerated conductive layers of the two power cables.
According to another general technical concept of the present invention, there is provided a power cable termination assembly including: a connection terminal and the aforementioned power cable. The connection terminal includes: cold shrink type insulators; a stress control cone disposed within and bonded to the cold-shrink insulator; and a crimp terminal located outside the cold shrink insulator or having one end protruding into the cold shrink insulator. The connecting end of the power cable is inserted into the cold-shrink insulator of the connecting terminal, one end of the crimping terminal is crimped on the exposed conductor core of the power cable, and the stress control cone is wrapped on the reconstituted conducting layer of the power cable.
FIG. 1 shows a schematic diagram of a power cable 10 according to an exemplary embodiment of the invention; fig. 2 shows an axial cross-section of a power cable 10 according to an exemplary embodiment of the invention.
As shown in fig. 1 and 2, in the illustrated embodiment, the power cable mainly includes: the conductor core 11, the insulating layer 12 wrapped on the conductor core 11, the shielding layer 13 wrapped on the insulating layer 12, and the outer sheath layer 16 wrapped on the shielding layer 13.
As shown in fig. 1 and 2, in the illustrated embodiment, the power cable 10 has a pretreated connection end having an exposed length of conductor core 11, an exposed length of insulation 12, and an exposed length of shielding 13.
Fig. 3 shows a schematic view of starting winding the semiconductive film adhesive tape 2 forward at an initial position P0 on the exposed shielding layer 13 at the connection end of the power cable 10; fig. 4 shows a schematic view of the semiconductive film adhesive tape 2 wound from an initial position P0 on the exposed shielding layer 13 up to a predetermined position P1 on the exposed insulating layer 12; fig. 5 shows a schematic view of winding the semiconductive film adhesive tape 2 back from a predetermined position P1 on the exposed insulating layer 12; fig. 6 shows a schematic view of winding the semiconductive film adhesive tape 2 back from a predetermined position P1 on the exposed insulating layer 12 to a termination position P2 on the exposed shielding layer 13; fig. 7 shows a schematic view of the reconstituted semiconductive layer 20 formed on the exposed shielding layer 13 and insulation layer 12 of the connection end of the power cable 10.
As shown in fig. 1 to 7, in the illustrated embodiment, the semiconductive film adhesive tape 2 is wound on the exposed shielding layer 13 and insulating layer 12 to form a reconstituted semiconductive layer 20 extending continuously in the axial direction on the exposed shielding layer 13 and insulating layer 12. Both ends of the reconstituted semiconducting layer 20 are wrapped around the exposed shielding layer 13 and the insulating layer 12, respectively, so that the end face 13a of the exposed shielding layer 13 is completely wrapped in the reconstituted semiconducting layer 20.
As shown in fig. 1 to 7, in the illustrated embodiment, the semiconductive film adhesive tape 2 has a predetermined elasticity, and a predetermined tensile force is applied to the semiconductive film adhesive tape 2 at the time of winding, so that the semiconductive film adhesive tape 2 wound on the shielding layer 13 and the insulating layer 12 generates a predetermined elastic tightening force in a radial direction to ensure that the wound semiconductive film adhesive tape 2 closely adheres to the outer surfaces of the shielding layer 13 and the insulating layer 12.
As shown in fig. 1 to 7, in the illustrated embodiment, the semiconductive film adhesive tape 2 includes a base material and a semiconductive adhesive adhered on one side surface of the base material, and the base material has a predetermined elasticity.
As shown in fig. 1 to 7, in the illustrated embodiment, the thickness of the semiconductive film adhesive tape 2 is less than 0.1mm. For example, the thickness of the semiconductive film adhesive tape 2 may be 0.08mm, 0.05mm or 0.03mm.
As shown in fig. 1-7, in the illustrated embodiment, the end surfaces of the two ends of the reconstituted semiconductive layer 20 are perpendicular to the axis of the power cable 10.
As shown in fig. 1-7, in the illustrated embodiment, the reconstituted semiconductive layer 20 has a first end that is located on the exposed shielding layer 13, with an end face of the first end of the reconstituted semiconductive layer 20 being a first predetermined distance from an end face 13a of the exposed shielding layer 13 such that a portion of the exposed shielding layer 13 is encased in the reconstituted semiconductive layer 20.
However, the present invention is not limited to the illustrated embodiment, and for example, in another exemplary embodiment of the present invention, the reconstituted semiconductive layer 20 may extend axially all the way to the root of the exposed shielding layer 13 such that the exposed shielding layer 13 is completely encased in the reconstituted semiconductive layer 20.
As shown in fig. 1-7, in the illustrated embodiment, the reconstituted semiconductive layer 20 has a second end that is located on the exposed insulating layer 12, with an end surface of the second end of the reconstituted semiconductive layer 20 being a second predetermined distance from an end surface of the exposed insulating layer 12 such that a portion of the exposed insulating layer 12 is encased in the reconstituted semiconductive layer 20.
However, the present invention is not limited to the illustrated embodiment, and for example, in another exemplary embodiment of the present invention, the reconstituted semiconductive layer 20 may extend axially all the way to the end face of the exposed insulating layer 12 so that the exposed insulating layer 12 is completely encased in the reconstituted semiconductive layer 20.
As shown in fig. 1 to 7, in the illustrated embodiment, the semiconductive film adhesive tape 2 is wound around the exposed shielding layer 13 and insulating layer 12 in a half-lap manner such that axially adjacent two turns of the wound semiconductive film adhesive tape 2 overlap each other.
As shown in fig. 1-7, in the illustrated embodiment, the power cable 10 further includes: a water-blocking buffer layer 14 and a metal sheath layer 15. The water-blocking buffer layer 14 is wrapped on the shielding layer 3. The metal sheath layer 15 is wrapped on the water-blocking buffer layer 14. The outer sheath layer 16 is wrapped over the metal sheath layer 15. The connection end of the power cable 10 also has an exposed section of the water-blocking buffer layer 14 and an exposed section of the metal jacket layer 15.
As shown in fig. 1-7, in the illustrated embodiment, the reconstituted semiconductive layer 20 comprises: a first semiconducting film tape wrap 20' and a second semiconducting film tape wrap 20". A first semiconductive film tape-wound layer 20' is wound on the outer surfaces of the exposed shield layer 13 and insulation layer 12. The second semiconductive film tape-wound layer 20 "is wound on the outer surface of the first semiconductive film tape-wound layer 20'.
As shown in fig. 1-7, in the illustrated embodiment, the first semiconducting film tape wrapping layer 20' is fully encased in the second semiconducting film tape wrapping layer 20".
As shown in fig. 1 to 7, in the illustrated embodiment, the first and second semiconductive film tape-wound layers 20', 20″ are wound from a continuous length of semiconductive film tape 2.
As shown in fig. 1 to 7, in the illustrated embodiment, the first semiconductive film adhesive tape winding layer 20' is wound from a start position P0 on the exposed shielding layer 13 to a predetermined position P1 on the exposed insulating layer 12. The second semiconductive film adhesive tape winding layer 20″ is wound from a predetermined position P1 on the exposed insulating layer 12 to a termination position P2 on the exposed shielding layer 13.
As shown in fig. 1 to 7, in the illustrated embodiment, the axial distance between the end position P2 and the predetermined position P1 is greater than the axial distance between the start position P0 and the predetermined position P1, so that the first semiconductive film tape-wound layer 20' is completely wrapped in the second semiconductive film tape-wound layer 20″.
A method of forming the reconstituted semiconductive layer 20 on the connection end of the power cable 10 will be briefly described below with reference to fig. 1 to 7. The method mainly comprises the following steps:
s100: providing a semiconductive film adhesive tape 20;
s200: winding the semiconductive film adhesive tape 20 forward (in the direction indicated by an arrow F in the figure) from a start position P0 on the exposed shielding layer 13 of the power cable 10 to a predetermined position P1 on the exposed insulating layer 12; and
s300: the semiconductive film adhesive tape 20 is wound from a predetermined position P1 on the exposed insulating layer 12 rearward (in the direction indicated by an arrow F' in the drawing) to a termination position P2 on the exposed shielding layer 13.
As shown in fig. 1 to 7, in the illustrated embodiment, the axial distance between the end position P2 and the predetermined position P1 is greater than the axial distance between the start position P0 and the predetermined position P1.
Fig. 8 shows a schematic view of a power cable intermediate joint assembly according to an exemplary embodiment of the invention.
As shown in fig. 1-8, in the illustrated embodiment, the power cable intermediate joint assembly includes: an intermediate connector 30 and two power cables 10 as described above. The intermediate joint 30 includes: cold-shrink insulator 31; two stress control cones 32 provided in the cold-shrink insulator 31 and bonded to the cold-shrink insulator 31; a stress control tube 34 disposed within the cold shrink insulator 31 and between the two stress control cones 32; and a crimp sleeve 33 disposed in the stress control tube 34. The connection ends of the two power cables 10 are respectively inserted into cold shrink insulators 41 from the two ends of the connection terminal 40, the crimp sleeve 33 is crimped on the exposed conductor cores 11 of the two power cables 10, the stress control tubes 34 are sleeved on the two ends of the exposed insulating layers 12 of the two power cables 10, and the two stress control cones 32 are respectively wrapped on the reconstituted conducting layers 20 of the two power cables 10.
Fig. 9 shows a schematic view of a power cable termination assembly according to an exemplary embodiment of the invention.
As shown in fig. 1 to 7 and 9, in the illustrated embodiment, the power cable termination assembly includes: the connection terminal 40 and the aforementioned power cable 10. The connection terminal 40 includes: cold-shrink insulator 41; a stress control cone 42 provided in the cold-shrink insulator 41 and joined to the cold-shrink insulator 41; and a crimp terminal 43 located outside the cold-shrink insulator 41 or having one end protruding into the cold-shrink insulator 41. The connection end of the power cable 10 is inserted into the cold-shrink insulator 41 of the connection terminal 40, one end of the crimp terminal 43 is crimped on the exposed conductor core 11 of the power cable 10, and the stress control cone 42 is wrapped on the reconstituted conductive layer 20 of the power cable 10.
The invention mainly aims at the habit of the areas such as the United states, and the like, needs to be installed quickly and simply, and achieves the characteristics of high quality performance, and adopts the semi-conductive film adhesive tape which has certain ductility, is provided with the semi-conductive adhesive and has the self-adhesive function (the thickness of the semi-conductive film adhesive tape is less than 0.1 mm), and is not easy to fall off after winding. Because of the thin thickness of the reconstituted semiconductive layer 20, the electric field distribution is very uniform, without protrusions, making it useful for a variety of high voltage cable accessories, such as power cable intermediate connectors and power cable terminations.
As shown in fig. 1 to 7, in the illustrated embodiment, after the shielding layer 13 of the power cable is removed, the end face of the shielding layer is simply ground, and no fine grinding is required, or even no grinding may be required. This can reduce the operation degree of difficulty, improves the efficiency of construction. Then, the semi-conductive film adhesive tape with certain width is manufactured by a factory, and is wound in a semi-lap joint mode from the exposed shielding layer of the power cable to the end face of the shielding layer, the semi-conductive film adhesive tape is tensioned and stretched to a certain extent during winding, the semi-conductive film adhesive tape is ensured to be attached to the surface of the shielding layer, the insulating layer which is gradually exposed outwards is wound, and the insulating layer is wound to a preset position on the insulating layer in the opposite direction.
As shown in fig. 1 to 7, in the illustrated embodiment, the technical solution of the present invention has at least the following advantages:
1) The installation is quick and simple;
2) The formed reconstituted semiconductive layer has smooth surface and flat end surface;
3) The thickness of the semi-conductive film adhesive tape is thin enough and very uniform, so that the electrical performance of the semi-conductive film adhesive tape is ensured;
4) The semi-conductive film adhesive tape is tightly attached to the shielding layer and the insulating layer, so that an air gap affecting the electrical performance is not generated;
5) The semi-conductive film adhesive tape is tightly and firmly adhered with the shielding layer and the insulating layer, is not easy to fall off, and can not shift and fall off when the cold-shrink stress cone is installed.
It will be appreciated by those skilled in the art that the above-described embodiments are exemplary and that modifications may be made to the embodiments described in various embodiments without structural or conceptual aspects and that these variations may be resorted to without departing from the scope of the invention.
Although the present invention has been described with reference to the accompanying drawings, the examples disclosed in the drawings are intended to illustrate preferred embodiments of the invention and are not to be construed as limiting the invention.
Although a few embodiments of the present general inventive concept have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the general inventive concept, the scope of which is defined in the claims and their equivalents.
It should be noted that the word "comprising" does not exclude other elements or steps, and that the word "a" or "an" does not exclude a plurality. In addition, any element numbers of the claims should not be construed as limiting the scope of the invention.
Claims (20)
1. A power cable comprising: a conductor core (11), an insulating layer (12) wrapped on the conductor core (11), a shielding layer (13) wrapped on the insulating layer (12) and an outer sheath layer (16) wrapped on the shielding layer (13),
the power cable (10) has a pretreated connection end with an exposed conductor core (11), an exposed insulating layer (12) and an exposed shielding layer (13),
the method is characterized in that:
winding a semiconducting film tape (2) on the exposed shielding layer (13) and insulating layer (12) to form a reconstituted semiconducting layer (20) extending continuously in the axial direction on the exposed shielding layer (13) and insulating layer (12),
both ends of the reconstituted semiconducting layer (20) are respectively wrapped on the exposed shielding layer (13) and the insulating layer (12), so that the end face (13 a) of the exposed shielding layer (13) is completely wrapped in the reconstituted semiconducting layer (20).
2. The power cable of claim 1, wherein:
the semi-conductive film adhesive tape (2) has a predetermined elasticity, and a predetermined tensile force is applied to the semi-conductive film adhesive tape (2) when winding, so that the semi-conductive film adhesive tape (2) wound on the shielding layer (13) and the insulating layer (12) generates a predetermined elastic tightening force in a radial direction to ensure that the wound semi-conductive film adhesive tape (2) is tightly adhered to the outer surfaces of the shielding layer (13) and the insulating layer (12).
3. The power cable of claim 1, wherein:
the semiconductive film adhesive tape (2) includes a base material and a semiconductive adhesive adhered to one side surface of the base material, and the base material has a predetermined elasticity.
4. The power cable of claim 1, wherein:
the thickness of the semiconductive film adhesive tape (2) is smaller than 0.1mm.
5. The power cable of claim 1, wherein:
the end surfaces of the two ends of the reconstituted semiconducting layer (20) are perpendicular to the axis of the power cable (10).
6. The power cable of claim 1, wherein:
the reconstituted semiconducting layer (20) has a first end located on the exposed shielding layer (13), an end face of the first end of the reconstituted semiconducting layer (20) being at a first predetermined distance from an end face (13 a) of the exposed shielding layer (13) such that a portion of the exposed shielding layer (13) is encased in the reconstituted semiconducting layer (20).
7. The power cable of claim 1, wherein:
the reconstituted semiconductive layer (20) extends axially all the way to the root of the exposed shielding layer (13) such that the exposed shielding layer (13) is completely encased in the reconstituted semiconductive layer (20).
8. The power cable of claim 1, wherein:
the reconstituted semiconducting layer (20) has a second end located on the exposed insulating layer (12), an end face of the second end of the reconstituted semiconducting layer (20) being at a second predetermined distance from an end face of the exposed insulating layer (12) such that a portion of the exposed insulating layer (12) is encased in the reconstituted semiconducting layer (20).
9. The power cable of claim 1, wherein:
the reconstituted semiconductive layer (20) extends axially up to the end face of the exposed insulating layer (12) such that the exposed insulating layer (12) is completely encased in the reconstituted semiconductive layer (20).
10. The power cable of claim 1, wherein:
the semiconductive film adhesive tape (2) is wound on the exposed shielding layer (13) and insulating layer (12) in a semi-lap joint manner, so that two adjacent turns of the adhesive tape in the axial direction of the wound semiconductive film adhesive tape (2) overlap each other.
11. The power cable of claim 1, further comprising:
a water-blocking buffer layer (14) wrapped on the shielding layer (3); and
a metal sheath layer (15) wrapped on the water-blocking buffer layer (14),
the outer sheath layer (16) is wrapped on the metal sheath layer (15), and the connecting end of the power cable is further provided with an exposed water-blocking buffer layer (14) and an exposed metal sheath layer (15).
12. The power cable according to any one of claims 1-11, characterized in that:
the reconstituted semiconductive layer (20) comprises:
a first semiconductive film tape winding layer (20') wound on the outer surfaces of the exposed shielding layer (13) and insulating layer (12); and
a second semiconducting film tape wrapping layer (20 ') wrapped around an outer surface of the first semiconducting film tape wrapping layer (20').
13. The power cable of claim 12, wherein:
the first semiconducting film tape winding layer (20') is fully encased in the second semiconducting film tape winding layer (20 ").
14. The power cable of claim 12, wherein:
the first semiconducting film tape winding layer (20 ') and the second semiconducting film tape winding layer (20') are wound from a continuous length of semiconducting film tape (2).
15. The power cable of claim 14, wherein:
the first semiconducting film tape winding layer (20') is wound from a starting position (P0) on the exposed shielding layer (13) up to a predetermined position (P1) on the exposed insulating layer (12);
the second semiconductive film tape winding layer (20') is wound from a predetermined position (P1) on the exposed insulating layer (12) up to a termination position (P2) on the exposed shielding layer (13).
16. The power cable of claim 15, wherein:
the axial distance between the end position (P2) and the predetermined position (P1) is greater than the axial distance between the start position (P0) and the predetermined position (P1) such that the first semiconducting film tape winding layer (20') is fully wrapped in the second semiconducting film tape winding layer (20 ").
17. A method of forming a reconstituted semiconductive layer on a connection end of a power cable, comprising the steps of:
providing a semiconductive film adhesive tape (20);
winding the semiconductive film adhesive tape (20) forward from a starting position (P0) on the exposed shielding layer (13) of the power cable (10) to a predetermined position (P1) on the exposed insulating layer (12); and
-winding the semiconductive film adhesive tape (20) backwards from the predetermined position (P1) on the exposed insulating layer (12) to a termination position (P2) on the exposed shielding layer (13).
18. The method of forming a reconstituted semiconductive layer on a connection end of a power cable as set forth in claim 17, wherein:
the axial distance between the end position (P2) and the predetermined position (P1) is greater than the axial distance between the start position (P0) and the predetermined position (P1).
19. A power cable intermediate joint assembly, comprising:
an intermediate joint (30), comprising:
a cold shrink insulator (31);
two stress control cones (32) provided in the cold shrink insulator (31) and joined to the cold shrink insulator (31);
a stress control tube (34) disposed within the cold shrink insulator (31) and between the two stress control cones (32); and
a crimp sleeve (33) disposed in the stress control tube (34); and two power cables (10) according to any one of claims 1 to 16,
the connecting ends of the two power cables (10) are respectively inserted into the cold-shrink insulator (41) from the two ends of the connecting terminal (40), the crimping sleeve (33) is crimped on the exposed conductor cores (11) of the two power cables (10), the stress control pipes (34) are sleeved on the two ends of the exposed insulating layers (12) of the two power cables (10), and the two stress control cones (32) are respectively wrapped on the reconstituted conducting layers (20) of the two power cables (10).
20. A power cable termination assembly, comprising:
connection terminal (40), comprising:
a cold shrink insulator (41);
a stress control cone (42) disposed within the cold shrink insulator (41) and bonded to the cold shrink insulator (41); and
a crimp terminal (43) located outside the cold-shrink insulator (41) or having one end protruding into the cold-shrink insulator (41); and
the power cable (10) according to any one of claims 1-16,
the connecting end of the power cable (10) is inserted into a cold-shrink insulator (41) of the connecting terminal (40), one end of the crimping terminal (43) is crimped on an exposed conductor core (11) of the power cable (10), and the stress control cone (42) is wrapped on a reconstituted conducting layer (20) of the power cable (10).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210752243.5A CN117352222A (en) | 2022-06-28 | 2022-06-28 | Power cable, connector assembly, terminal assembly and method for forming reconstituted semiconductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210752243.5A CN117352222A (en) | 2022-06-28 | 2022-06-28 | Power cable, connector assembly, terminal assembly and method for forming reconstituted semiconductive layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117352222A true CN117352222A (en) | 2024-01-05 |
Family
ID=89354489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210752243.5A Pending CN117352222A (en) | 2022-06-28 | 2022-06-28 | Power cable, connector assembly, terminal assembly and method for forming reconstituted semiconductive layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117352222A (en) |
-
2022
- 2022-06-28 CN CN202210752243.5A patent/CN117352222A/en active Pending
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