CN117340769A - Polishing equipment for silicon carbide wafer - Google Patents
Polishing equipment for silicon carbide wafer Download PDFInfo
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- CN117340769A CN117340769A CN202311660727.8A CN202311660727A CN117340769A CN 117340769 A CN117340769 A CN 117340769A CN 202311660727 A CN202311660727 A CN 202311660727A CN 117340769 A CN117340769 A CN 117340769A
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- Prior art keywords
- silicon carbide
- sliding
- fixedly connected
- rotating
- shell
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Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 140
- 238000005498 polishing Methods 0.000 title claims abstract description 138
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 230000007246 mechanism Effects 0.000 claims abstract description 51
- 238000005096 rolling process Methods 0.000 claims abstract description 21
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 140
- 239000007788 liquid Substances 0.000 claims description 39
- 238000001179 sorption measurement Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000010720 hydraulic oil Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000017525 heat dissipation Effects 0.000 abstract description 7
- 230000000694 effects Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to the technical field of wafer polishing, and particularly provides polishing equipment for a silicon carbide wafer. Including the support, the support rotates through first support and is provided with the rotating turret, and the rotating turret slides and is provided with first slip shell, and the lower part of first slip shell rotates and is provided with the rotation shell, and the spacing slip of rotation shell is provided with the integral key shaft, and the integral key shaft rigid coupling has first fixed shell, and first fixed shell is provided with the slip post, and the support rigid coupling has first servo motor, and first servo motor's output shaft rigid coupling has the rolling disc, and the rolling disc is installed to the rolling disc, and the rotating turret is provided with reciprocating mechanism. According to the invention, the sliding column and the polishing disc rotate at a constant speed, so that the polishing disc is ensured to uniformly polish the silicon carbide film on the sliding column, and then the silicon carbide wafer and the polishing disc are moved by matching with the reciprocating mechanism, so that heat dissipation generated by polishing is accelerated, and the polishing efficiency of the silicon carbide wafer is ensured.
Description
Technical Field
The invention relates to the technical field of wafer polishing, and particularly provides polishing equipment for a silicon carbide wafer.
Background
Silicon carbide wafers are thin sheets of semiconductor material that are widely used in the manufacture of semiconductors or electronic devices, and the basic process of silicon carbide wafers comprises: material growth, cutting, polishing, preparing metal electrode and the like.
When the silicon carbide wafer is polished, the rotating silicon carbide wafer is required to be contacted with the rotating polishing disc to carry out polishing operation, wherein heat generated by friction of the silicon carbide wafer and the polishing disc cannot be rapidly radiated in the polishing process, so that a large amount of heat is accumulated on the silicon carbide wafer, the temperature of the silicon carbide wafer is overhigh, the structure and the property of the surface of the silicon carbide wafer are changed, the surface quality is reduced, and meanwhile, friction and abrasion are increased due to overhigh temperature, so that the polishing effect of the silicon carbide wafer is affected.
Thus, in view of this current situation, there is a need to develop a polishing apparatus for silicon carbide wafers to meet the needs of practical use.
Disclosure of Invention
The present invention has been made in view of the above-mentioned drawbacks, and an object of the present invention is to provide a polishing apparatus for a silicon carbide wafer, which is expected to solve the problem of poor polishing effect caused by an excessively high temperature on the silicon carbide wafer in the prior art.
In order to solve the technical problems, the invention adopts the following technical scheme: the utility model provides a polishing equipment for carborundum wafer, includes the support, control terminal is installed to the lateral wall of support, the lateral wall rigid coupling of support has first support, the first support is installed through electronic pivot, the first sliding shell of symmetry is provided with in the rotating turret slip, the lateral wall rigid coupling of first sliding shell has the biax motor, the lower part rotation of first sliding shell is provided with the rotating shell, one of them output shaft of biax motor with pass through the gear train transmission between the rotating shell, the spacing slip of rotating shell is provided with the spline shaft, the downside rigid coupling of first sliding shell has the first electric putter of symmetry, the symmetry the flexible end common rigid coupling of first electric putter has the rotation ring, the rotation of rotation ring be provided with the first fixed shell of spline shaft rigid coupling, first fixed shell is provided with the spliced pole, the spliced pole is close to one side of support is used for installing the carborundum wafer, the bottom rigid coupling of support has first servo motor, the output shaft rigid coupling of first servo motor has the rolling disc, the rolling disc is located the rolling disc is installed to the symmetry and is beaten the mill and is set up.
Preferably, the sliding column is provided with first air holes uniformly distributed in the circumferential direction and second air holes uniformly distributed in the circumferential direction, and the first air holes and the second air holes are distributed in a staggered manner.
Preferably, the reciprocating mechanism comprises a reciprocating screw, the reciprocating screw is fixedly connected to the rotating frame, the first sliding shell is provided with a through hole for the adjacent reciprocating screw to pass through, the first sliding shell is rotationally provided with a rotating block, the rotating block is in threaded fit with the adjacent reciprocating screw, the side wall of the first sliding shell is rotationally provided with a rotating rod through a supporting frame, the rotating rod is in transmission with the rotating block through a bevel gear set, the rotating rod is fixedly connected with a first rotating wheel, the double-shaft motor is close to an output shaft limiting type rotating shell on one side of the first rotating wheel, the second sliding shell is fixedly connected with a second rotating wheel, and the second rotating wheel is matched with the first rotating wheel.
Preferably, the downside rigid coupling of first sliding shell has the second electric putter, the flexible end of second electric putter pass through the connecting plate with the second sliding shell rotates to be connected, first rotor is round platform shape, just first rotor with second rotor complex one side is vertical setting.
Preferably, the polishing device further comprises a symmetrical adjusting mechanism, the symmetrical adjusting mechanisms are respectively arranged on the adjacent first fixing shells, the adjusting mechanisms are used for adjusting the pressure between the sliding columns and the polishing disc, the first fixing shells and the adjacent sliding columns are in limited sliding, the first fixing shells and the adjacent sliding columns are matched to form a cylindrical cavity filled with hydraulic oil, the adjusting mechanisms comprise threaded rods, the threaded rods are rotatably arranged on the adjacent first fixing shells, the side walls of the first fixing shells are fixedly connected with second fixing shells, the second fixing shells are communicated with the cylindrical cavities formed by the adjacent first fixing shells and the adjacent sliding columns, the second fixing shells are provided with first sliding frames and sliding blocks in sliding mode, the first sliding frames are in threaded fit with the adjacent first sliding frames, and springs are arranged between the first sliding frames and the adjacent sliding blocks.
Preferably, the side wall of the first sliding frame is provided with scales, and the scales of the first sliding frame are matched with the upper side face of the second fixed shell and are used for accurately adjusting the pressure between the sliding column and the polishing disc.
Preferably, the polishing device further comprises a flow guiding mechanism for controlling the circulation of the polishing solution, the flow guiding mechanism is arranged on the support, the flow guiding mechanism comprises a second support, the second support is fixedly connected to the side wall of the support, a water pump, a first liquid guiding pipe and a second liquid guiding pipe are fixedly connected to the second support, the first liquid guiding pipe and the second liquid guiding pipe are communicated with the water pump, the first liquid guiding pipe is arranged on the upper portion of the second liquid guiding pipe, evenly distributed spray heads are arranged on the first liquid guiding pipe, and a filter screen is arranged on the second liquid guiding pipe.
Preferably, the inner side wall of the support is in a truncated cone shape, the inner side wall of the support is provided with an annular groove, the side wall of the rotating disc is provided with guide plates distributed at equal intervals in the circumferential direction, and the guide plates are opposite to the annular groove of the support.
Preferably, the silicon carbide wafer centering device further comprises a symmetrical adsorption mechanism, the symmetrical adsorption mechanism is respectively arranged on the adjacent sliding columns, the adsorption mechanism comprises a third fixing shell with circumferential equidistance, the third fixing shells are all embedded in the adjacent sliding columns, third air guide holes are formed in the sliding columns and are communicated with the adjacent third fixing shells, a guide pipe is fixedly connected with the first fixing shell, the guide pipe penetrates through the adjacent sliding columns and is in sliding connection with the sliding columns, the guide pipe is communicated with the adjacent third air guide holes, a fourth fixing shell is fixedly connected with the side wall of the first fixing shell, the fourth fixing shell is communicated with the adjacent guide pipe, a fixing ring is rotationally arranged on the fourth fixing shell, a circular pipe is arranged on the fixing ring, a third electric push rod is fixedly connected with the telescopic end of the third electric push rod, the push rod of the third electric push rod is located in the circular pipe of the fixing ring, and the first silicon carbide wafer centering device is arranged on the first silicon carbide wafer centering device.
Preferably, the centering assembly comprises a first fixed frame, the first fixed frame is fixedly connected to the side wall of the first support, the first fixed frame is provided with uniformly distributed rotating rollers, a second fixed frame is fixedly connected to the lower side of the first fixed frame, a second servo motor is fixedly connected to the second fixed frame, a gear is fixedly connected to an output shaft of the second servo motor, a rack with central symmetry is slidably arranged in the second fixed frame, the racks with central symmetry are all meshed with the gears on the second servo motor, and a symmetrical second sliding frame is slidably arranged on the first fixed frame and is fixedly connected with the adjacent racks.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the sliding column and the polishing disc are controlled to rotate at a constant speed through the double-shaft motor and the first servo motor, so that the polishing disc is ensured to uniformly polish and polish the silicon carbide wafer on the sliding column;
2. the silicon carbide wafer on the sliding column moves back and forth along the radial direction of the polishing disc at a constant speed through the rotation of the rotating block in the reciprocating mechanism, so that the heat dissipation generated by polishing is accelerated, the polishing efficiency of the silicon carbide wafer is ensured, and the polishing disc is further used for uniformly polishing the silicon carbide wafer;
3. the threaded rod in the adjusting mechanism is convenient to apply different pressures to the silicon carbide wafer, the silicon carbide wafer is polished to different degrees, the applicability and the practicability of the device are improved, meanwhile, friction heat generation between the silicon carbide wafer and the polishing disc is controlled by adjusting the pressure, excessive heat is prevented from being accumulated between the silicon carbide wafer and the polishing disc, and the quality of the polished silicon carbide wafer is guaranteed;
4. the polishing liquid is recycled through the operation of the water pump in the flow guide mechanism, so that the polishing stability between the polishing disc and the silicon carbide wafer is ensured, the polishing efficiency is improved, and the flow of the polishing liquid further dissipates heat of the silicon carbide wafer and the polishing disc through the silicon carbide wafer and the polishing disc, so that the device can stably polish the silicon carbide wafer;
5. the silicon carbide wafer is fixed through the negative pressure of the third fixing shell in the adsorption mechanism, so that the working automation of the device is improved, and meanwhile, the working efficiency is improved;
6. through the work of the second servo motor in the centering assembly, the silicon carbide wafer is convenient to install on the adjacent sliding column in the middle, the sliding column is ensured to apply uniform pressure to the silicon carbide wafer, and therefore the silicon carbide wafer is ensured to be uniformly polished.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a schematic view of the first servo motor and the rotating disc of the present invention;
FIG. 3 is a schematic perspective view of the reciprocating mechanism of the present invention;
FIG. 4 is a cross-sectional view of a sliding column of the present invention;
FIG. 5 is a cross-sectional view of a second slide housing and a second rotating wheel component of the present invention;
FIG. 6 is a cross-sectional view of an adjustment mechanism of the present invention;
FIG. 7 is a schematic perspective view of a diversion mechanism according to the present invention;
FIG. 8 is a cross-sectional view of the adsorption mechanism of the present invention;
FIG. 9 is a cross-sectional view of a fourth stationary housing and a stationary ring component of the present invention;
fig. 10 is a schematic structural view of the centering assembly of the present invention.
Reference numerals: 1: support, 101: control terminal, 102: first support, 103: turret, 104: first slide case, 105: biaxial motor, 106: rotating shell, 107: spline shaft, 108: first electric putter, 109: a rotating ring, 110: first fixing case, 111: slide column, 1111: first air guide hole, 1112: second air guide holes, 112: first servo motor, 113: rotating disk, 114: polishing disc, 2: reciprocating mechanism, 201: reciprocating screw, 202: rotating block, 203: rotating lever, 204: first rotating wheel, 205: second slide case, 206: second rotating wheel, 3: second electric putter, 4: adjustment mechanism, 401: threaded rod, 402: second fixing case, 403: first carriage, 404: sliding block, 405: spring, 5: diversion mechanism, 501: second rack, 502: suction pump, 503: first catheter, 504: second catheter, 505: deflector, 6: adsorption mechanism, 601: third stationary housing, 602: third air vent, 603: catheter, 604: fourth fixed housing, 605: a retaining ring, 606: third electric putter, 7: centering component, 701: first fixed frame, 702: second fixed frame, 703: second servo motor, 704: rack, 705: and a second carriage.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following brief description of the drawings of the embodiments will make it apparent that the drawings in the following description relate only to some embodiments of the present invention and are not limiting of the present invention.
Example 1: 1-4, comprising a support 1, a control terminal 101 is mounted at the front of the lower side of the support 1, a first bracket 102 is fixedly connected to the left of the lower side of the support 1, a rotating frame 103 is mounted at the upper of the first bracket 102 through an electric rotating shaft, the electric rotating shaft of the first bracket 102 is electrically connected with the control terminal 101, a first sliding shell 104 is slidingly arranged at the left and right of the rotating frame 103, a double-shaft motor 105 is fixedly connected to the lower side of the first sliding shell 104, a rotating shell 106 is rotatably arranged in the middle of the lower side of the first sliding shell 104, a gear is fixedly connected to an upper output shaft of the double-shaft motor 105, a gear is fixedly connected to the upper part of the rotating shell 106, the gear on the double-shaft motor 105 is meshed with the gear of the rotating shell 106, a spline shaft 107 is slidingly arranged at the lower part of the rotating shell 106, a first fixed shell 110 is fixedly connected to the lower side of the spline shaft 107, the lower side of the first sliding shell 104 is fixedly connected with a first electric push rod 108 which is symmetrical in front and back, the two first electric push rods 108 are electrically connected with the control terminal 101, the telescopic ends of the two first electric push rods 108 are fixedly connected with a rotating ring 109, the rotating ring 109 is rotationally connected with a first fixed shell 110, the lower part of the first fixed shell 110 is provided with a sliding column 111, the lower side of the sliding column 111 is used for installing a silicon carbide wafer, four first air holes 1111 and four second air holes 1112 which are uniformly distributed in the circumferential direction are formed in the sliding column 111, the four first air holes 1111 and the four second air holes 1112 are uniformly distributed in the circumferential direction in a staggered manner, the first air holes 1111 are divided into three sections of arc-shaped through holes, the bottom of the support 1 is fixedly connected with a first servo motor 112 which is electrically connected with the control terminal 101, the output shaft of the first servo motor 112 is fixedly connected with a rotating disc 113 which is positioned in the support 1, the polishing disc 114 is installed to the detachable type of rolling disc 113, rolling disc 113's upper portion is equipped with evenly distributed's projection, rolling disc 114's lower part is equipped with evenly distributed's blind hole, rolling disc 113's projection and the blind hole cooperation of rolling disc 114, and rolling disc 114's upper surface is equipped with the recess of crisscross distribution, rolling disc 114's recess is used for guiding the lower surface of evenly contacting the carborundum wafer of polishing liquid, ensure polishing efficiency, rolling frame 103 is provided with bilateral symmetry's two sets of reciprocating mechanism 2, reciprocating mechanism 2 is used for controlling slide column 111 and removes along rolling disc 113's radial direction, change the position of carborundum wafer on rolling disc 114, carry out high-efficient utilization to rolling disc 114.
Referring to fig. 3 and 5, the reciprocator 2 includes a reciprocator 201, the reciprocator 201 is fixedly connected to the turret 103, a horizontal through hole for passing through an adjacent reciprocator 201 is provided in the middle of the first sliding shell 104, a rotating block 202 in threaded engagement with the adjacent reciprocator 201 is rotationally provided on the side wall of the first sliding shell 104, a rotating rod 203 is rotationally provided on the lower side surface of the first sliding shell 104 through a supporting frame, bevel gears are fixedly connected to the upper end of the rotating rod 203 and one side of the rotating block 202 outside the adjacent first sliding shell 104, the adjacent two bevel gears are engaged, a first rotating wheel 204 is fixedly connected to the lower end of the rotating rod 203, a second rotating wheel 206 matched with the first rotating wheel 204 is rotationally provided on the lower side output shaft of the second sliding shell 205, and in the working process of the biaxial motor 105, the biaxial motor 105 makes the first sliding shell 104 reciprocate left and right along the adjacent reciprocator 201 through connected parts, even if a silicon carbide wafer mounted on the polishing disc 114 rotates and moves, the polishing effect on the silicon carbide wafer is improved, and the polishing disc 114 is prevented from being polished, and the silicon carbide wafer is completely removed by the polishing disc 114, and the polishing effect is prevented from being high.
Referring to fig. 5, a second electric push rod 3 electrically connected to the control terminal 101 is fixedly connected to the lower side of the first sliding shell 104, a connecting plate is fixedly connected to a telescopic end of the second electric push rod 3, an upper connecting plate of the second electric push rod 3 is rotationally connected to the lower portion of the second sliding shell 205, the first rotating wheel 204 is in a circular truncated cone shape, and one side of the first rotating wheel 204, which is close to an adjacent second rotating wheel 206, is vertically arranged, so that the positions of the second sliding shell 205 and the second rotating wheel 206 are conveniently adjusted through the second electric push rod 3, the transmission ratio of the second rotating wheel 206 to the first rotating wheel 204 is changed, the movement speed of the first sliding shell 104 is changed, the diversity and practicality of the device are improved, meanwhile, the first sliding shell 104 drives the sliding column 111 to move together through connected parts, the movement speed of the first sliding shell 104 is changed together, the flow speed of air is changed through the first air guide holes 1111 and the second air guide holes 1112, namely the heat dissipation efficiency of silicon carbide wafers on the sliding column 111 is changed, and the device is convenient for guaranteeing heat dissipation of silicon carbide wafers with different specifications to be stable, and the silicon carbide wafers with different polishing degrees.
When the silicon carbide wafer is polished, an operator installs the silicon carbide wafer on the lower surface of the left sliding column 111 through paste paper and evenly smears polishing liquid on the polishing disc 114, after the operation is finished, the operator starts the electric rotating shaft of the first bracket 102 through the control terminal 101, the rotating frame 103 drives adjacent parts to rotate 180 degrees and then stops the electric rotating shaft of the first bracket 102, at the moment, the left sliding column 111 drives the installed silicon carbide wafer to rotate to the upper side of the polishing disc 114, then two first electric push rods 108 are started through the control terminal 101, the telescopic ends of the first electric push rods 108 drive the rotating rings 109 to move downwards, the rotating rings 109 drive the first fixed shells 110 and the sliding columns 111 to move downwards, the first fixed shells 110 move downwards to drive the spline shafts 107 to slide in the rotating shells 106 until the silicon carbide wafer on the sliding columns 111 is attached to the upper surface of the polishing disc 114, and at the moment, the control terminal 101 closes the two first electric push rods 108.
After the silicon carbide wafer on the sliding column 111 is attached to the upper surface of the polishing disc 114, an operator starts the double-shaft motor 105 and the first servo motor 112 through the control terminal 101, an output shaft of the first servo motor 112 drives the rotating disc 113 and the polishing disc 114 to rotate, the polishing disc 114 rotates to continuously polish the silicon carbide wafer on the sliding column 111, an output shaft of the double-shaft motor 105 drives the rotating shell 106 to rotate through the gear set, the rotating shell 106 drives the sliding column 111 to rotate through the spline shaft 107 and the first fixed shell 110, the sliding column 111 rotates to drive the silicon carbide wafer to rotate, the rotation angular speed of the silicon carbide wafer is consistent with the rotation angular speed of the polishing disc 114, the polishing efficiency of the silicon carbide wafer is improved, and meanwhile, the silicon carbide wafer is guaranteed to be polished to a uniform degree.
While the output shaft of the double-shaft motor 105 rotates, the lower output shaft of the double-shaft motor 105 drives the second sliding shell 205 and the second rotating wheel 206 to rotate together, the second rotating wheel 206 drives the rotating rod 203 to rotate through the first rotating wheel 204, the rotating rod 203 drives the rotating block 202 to rotate through the bevel gear set, the rotating block 202 reciprocates left and right along the reciprocating screw 201, the rotating block 202 moves and drives connected parts to move together through the first sliding shell 104, so that the sliding column 111 drives the silicon carbide wafer to move along the radius direction of the polishing disc 114, the polishing position of the silicon carbide wafer on the polishing disc 114 is changed continuously, the temperature loss on the polishing disc 114 is facilitated, and the influence of excessive heat accumulation at the polishing positions of the silicon carbide wafer and the polishing disc 114 on the polishing effect and the physical properties of the silicon carbide wafer is avoided.
In the process of rotating and moving the sliding column 111, part of gas flows through the first gas guide holes 1111 and the second gas guide holes 1112, wherein the gas flows perform heat dissipation operation on the sliding column 111, that is, heat dissipation and temperature reduction are performed on the silicon carbide wafer on the sliding column 111, so that the silicon carbide wafer is prevented from being excessively high in temperature due to polishing, and the silicon carbide wafer is further protected.
When the first sliding shell 104 reciprocates to the initial position, the polishing operation of the silicon carbide wafer is completed, an operator closes the biaxial motor 105 and the first servo motor 112 through the control terminal 101 and controls the telescopic ends of the two first electric push rods 108 to shrink and reset, then the operator repeats the operation to mount the silicon carbide wafer to be polished on the sliding column 111 on the left side, and performs reverse work through the electric rotating shaft on the first bracket 102, so that the positions of the two sliding columns 111 are changed, then the operator removes the polished silicon carbide wafer, then the operator repeats the operation to perform continuous polishing operation on the silicon carbide wafer, the polishing disc 114 is correspondingly worn along with the continuous polishing of the silicon carbide wafer, and the operator needs to replace the polishing disc 114 periodically.
When polishing silicon carbide wafers of different specifications, an operator starts the second electric push rod 3 through the control terminal 101, controls the position of the telescopic end on the second electric push rod 3, changes the position of the telescopic end on the second electric push rod 3, drives the second rotating wheel 206 to correspondingly move through the second sliding shell 205, changes the position of the second rotating wheel 206, accordingly changes the transmission ratio between the second rotating wheel 206 and the first rotating wheel 204, completes the regulation and control of the rotating speed of the rotating block 202, controls the speed of the first sliding shell 104 for driving the sliding column 111 and the silicon carbide wafers to move through connected parts, namely, the operator adjusts the moving speed of the silicon carbide wafers on the polishing disc 114 according to the thickness and the size of the silicon carbide wafers, adjusts the flow rate of outside air through the first air guide holes 1111 and the second air guide holes 1112, and accordingly changes the heat dissipation efficiency of the sliding column 111, and avoids overhigh temperature between the silicon carbide wafers on the sliding column 111 and the polishing disc 114, namely, and accelerates the polishing efficiency of the silicon carbide wafers on the polishing disc 114 under the condition that the silicon carbide wafers are completely and not damaged.
Example 2: based on embodiment 1, referring to fig. 5 and 6, the device further comprises two groups of adjusting mechanisms 4 symmetrical left and right, the two groups of adjusting mechanisms 4 are respectively arranged on the adjacent first fixed shells 110, the adjusting mechanisms 4 are used for adjusting the pressure between the sliding columns 111 and the polishing discs 114, so that silicon carbide wafers with different specifications are polished to different extents, the applicability of the device is improved, the first fixed shells 110 and the adjacent sliding columns 111 slide in a limited manner, the first fixed shells 110 and the adjacent sliding columns 111 cooperate to form a cylindrical cavity filled with hydraulic oil, the adjusting mechanisms 4 comprise threaded rods 401, the threaded rods 401 are rotationally arranged on the upper parts of the adjacent first fixed shells 110, the upper side surfaces of the first fixed shells 110 are fixedly connected with second fixed shells 402 communicated with the adjacent cylindrical cavity, the first sliding frames 403 and sliding blocks 404 are slidingly arranged inside the second fixed shells 402, the side wall of the first sliding frame 403 is provided with scales, the scales of the first sliding frame 403 are matched with the upper side surface of the second fixed shell 402, the scales are used for accurately adjusting the pressure between the sliding column 111 and the polishing disc 114, the first sliding frame 403 is positioned at the upper part of the adjacent sliding block 404, the first sliding frame 403 is in threaded fit with the adjacent threaded rod 401, a spring 405 is arranged between the first sliding frame 403 and the adjacent sliding block 404, the spring 405 is positioned in the adjacent second fixed shell 402, an operator changes the position of the first sliding frame 403 by rotating the threaded rod 401, so that the first sliding frame 403 moves to compress the adjacent spring 405, the pressure between the silicon carbide wafer and the polishing disc 114 after the sliding column 111 moves is changed, the device is convenient for progressively polishing the silicon carbide wafer, and the gradual increase of the pressure between the silicon carbide wafer and the polishing disc 114 effectively controls the friction force between the silicon carbide wafer and the polishing disc 114, thereby effectively controlling the friction heat generation between the grinding disc 114 and the silicon carbide wafer and avoiding the excessively high temperature grinding between the two.
When the silicon carbide wafer is polished, the control terminal 101 starts the first electric push rod 108 to work to repeat the operation, so that after the silicon carbide wafer is attached to the polishing disc 114, the polishing disc 114 moves in the first fixed shell 110 by extruding the silicon carbide wafer and the sliding column 111, the sliding column 111 moves to extrude hydraulic oil into the second fixed shell 402, the hydraulic oil extrudes the sliding block 404 to move to compress the spring 405, at the moment, the elasticity of the spring 405 acts on the silicon carbide wafer through the sliding block 404, the hydraulic oil and the sliding column 111, the pressure between the silicon carbide wafer and the polishing disc 114 is controlled, the silicon carbide wafer is gradually pressed, the friction force between the silicon carbide wafer and the polishing disc 114 is controlled, the rotation of the silicon carbide wafer and the polishing disc 114 is matched, the temperature between the silicon carbide wafer and the polishing disc 114 is controlled, the silicon carbide wafer can be conveniently and rapidly dissipated, and simultaneously when the gas is conveniently passed through the first air guide holes 1111 and the second air guide holes 1112, the polishing effect of the silicon carbide wafer on the sliding column 111 is ensured, and the polishing effect of the silicon carbide wafer is gradually increased.
The above operation is repeated subsequently, so that the silicon carbide wafer and the polishing disc 114 rotate together, and the silicon carbide wafer is polished, wherein the pressure is uniformly distributed at each position of the silicon carbide wafer under the action of the hydraulic oil between the first fixed shell 110 and the sliding column 111, thereby further guaranteeing the uniformity of the polishing degree of the silicon carbide wafer and improving the quality of the finished product of the silicon carbide wafer.
When polishing silicon carbide wafers of different specifications, an operator rotates the threaded rod 401 first, the threaded rod 401 rotates to enable the first sliding frame 403 to move downwards in the second fixed shell 402, the first sliding frame 403 moves downwards to compress the spring 405, and the elastic potential energy of the spring 405 in an initial state is closed, so that the pressure between the silicon carbide wafers and the polishing disc 114 after the sliding column 111 moves is changed, and meanwhile, the operator can perform step-by-step pressurizing polishing on the silicon carbide wafers according to actual conditions, control the temperature between the silicon carbide wafers and the polishing disc 114, and increase the applicability and practicality of the device, and guarantee the stable polishing of the device on the silicon carbide wafers.
Example 3: based on embodiment 2, referring to fig. 2 and 7, further include a guiding mechanism 5, the guiding mechanism 5 is disposed on the support 1, the guiding mechanism 5 is used for controlling the polishing solution to circulate, the guiding mechanism 5 includes a second support 501, the second support 501 is fixedly connected to the rear side of the support 1, a first liquid guiding tube 503, a water suction pump 502 and a second liquid guiding tube 504 are sequentially fixedly connected to the side wall of the second support 501 from top to bottom, the water suction pump 502 is electrically connected to the control terminal 101, the first liquid guiding tube 503 and the second liquid guiding tube 504 are both communicated with the water suction pump 502, a uniformly distributed nozzle is disposed on the upper portion of the first liquid guiding tube 503, a filter screen is disposed at the lower end of the second liquid guiding tube 504, the inner side wall of the support 1 is in a circular truncated cone shape for guiding impurities in the polishing solution to gather towards the inner bottom of the support 1, an annular groove for storing impurities in the polishing solution is disposed on the inner side wall of the support 1, a circumferentially equidistant distributed guiding plate 505 is disposed on the side wall of the rotating disc 113, the guiding plate 505 is disposed to tilt, the guiding plate 505 is rotated to stir the polishing solution to move towards the inner side wall of the support 1, the guiding plate 505 is opposite to the annular groove of the support 1, the rotating the guiding plate 505 is rotated, the guiding plate 505 is driven to rotate in the annular groove 113, and the rotating the guiding plate 505 to rotate in the rotating direction and the rotating plate 113 and the silicon cooling plate is driven to rotate in the annular groove and move along with the rotating plate 113.
In the polishing process of the silicon carbide wafer, the control terminal 101 simultaneously starts the water suction pump 502, wherein the rotating disc 113 and the polishing disc 114 rotate to enable polishing liquid to flow into the support 1, the rotating disc 113 simultaneously drives the guide plate 505 to rotate, the guide plate 505 rotates to stir the polishing liquid in the support 1, the polishing liquid rotates in the support 1 to generate centrifugation, impurities polished in the polishing liquid are attached to the inner wall of the support 1 under the centrifugal action and enter into the upper annular groove of the support 1, the water suction pump 502 works to enable the second liquid guide tube 504 to pump the polishing liquid in the support 1 (wherein a filter screen on the second liquid guide tube 504 further filters the impurities in the polishing liquid), the polishing liquid is sprayed out from a spray head of the first liquid guide tube 503 and uniformly flows to the upper surface of the polishing disc 114 (the polishing disc 114 in the polishing process at this moment rotates anticlockwise), the polishing liquid is ensured to be always stored between the silicon carbide wafer and the polishing disc 114, polishing efficiency and polishing effect are improved, simultaneously, the impurities carried after polishing are convenient to flow into the support 1 under the rotation effect of the polishing disc 114, the heat of the polishing liquid is reduced, the heat of the silicon carbide wafer and the wafer is further guaranteed to flow between the silicon carbide wafer and the wafer 114, and the heat of the wafer is further guaranteed to absorb heat of the wafer after the wafer is further circulated between the silicon carbide and the wafer is further guaranteed through the disc 114.
Example 4: based on embodiment 3, refer to fig. 3, fig. 8 and fig. 9, further include two groups of adsorption mechanisms 6 symmetrical left and right, two groups of adsorption mechanisms 6 are respectively disposed on adjacent sliding columns 111, adsorption mechanism 6 includes four third fixing shells 601 with circumferential equidistance, four third fixing shells 601 are all embedded in adjacent sliding columns 111, the lower part of third fixing shell 601 is set to rubber material for improving tightness between third fixing shell 601 and silicon carbide wafer, the inside of sliding column 111 is provided with third air guide hole 602 communicated with adjacent third fixing shell 601, first fixing shell 110 is fixedly connected with guide tube 603, the lower part of guide tube 603 penetrates adjacent sliding column 111 and is in sliding connection with it, and guide tube 603 is communicated with adjacent third air guide hole 602, the upper side of first fixing shell 110 is fixedly connected with fourth fixing shell 604, the upper end of guide tube 603 is fixedly connected with fourth fixing shell 604, the upper part of fourth fixing shell 604 is rotatably provided with a fixing ring 605, the front part of fixing ring 605 is provided with a third air guide hole 602 communicated with air guide hole 602, the electric terminal of fixing ring 605 is electrically connected with third air guide hole 602, the electric push rod 606 is fixedly connected with third push rod assembly 102, and is fixedly connected with silicon carbide wafer 102, and is fixedly connected with the third push rod assembly for forming vacuum chuck assembly.
Referring to fig. 1 and 10, the centering assembly 7 includes a first fixing frame 701, the first fixing frame 701 is fixedly connected to the left side surface of the first support 102, the first fixing frame 701 is provided with uniformly distributed rotating rollers, the lower side surface of the first fixing frame 701 is fixedly connected with a second fixing frame 702, the lower side surface of the second fixing frame 702 is fixedly connected with a second servo motor 703 electrically connected with the control terminal 101, an output shaft of the second servo motor 703 is fixedly connected with a gear, the gear of the second servo motor 703 is located in the second fixing frame 702, two racks 704 with central symmetry are slidably disposed in the second fixing frame 702, the two racks 704 are engaged with the gears on the second servo motor 703, the left and right sides of the first fixing frame 701 are respectively slidably provided with a second sliding frame 705, the second sliding frame 705 is fixedly connected with adjacent racks, the two second sliding frames 705 are made to be close to each other and are centrally clamped on the silicon carbide wafer, so that the silicon carbide wafer is conveniently and centrally installed on the sliding column 111, the sliding column 111 is conveniently applied with uniform distribution pressure on the silicon carbide wafer, and uniform polishing of the silicon carbide wafer is ensured.
When polishing silicon carbide wafers, the existing conveying mechanism is used for enabling the silicon carbide wafers to sequentially move onto the rotating rollers of the first fixing frame 701, after one silicon carbide wafer moves onto the first fixing frame 701, the control terminal 101 starts the second servo motor 703, the conveying shaft of the second servo motor 703 reciprocally rotates, the conveying shaft of the second servo motor 703 firstly enables the two racks 704 to drive the two second sliding frames 705 to be close to each other through the gears, the two second sliding frames 705 are close to each other to clamp the silicon carbide wafers in a centering mode, and finally the conveying shaft of the second servo motor 703 reversely rotates to reset, and meanwhile the control terminal 101 closes the second servo motor 703.
After the position of the silicon carbide wafer is adjusted, the control terminal 101 starts the left two first electric push rods 108, so that the left sliding column 111 moves downwards to be attached to the silicon carbide wafer, the subsequent control terminal 101 starts the left third electric push rod 606, the telescopic end of the third electric push rod 606 drives the push rod to move upwards in the circular tube of the fixed ring 605, the gas pressure in the fourth fixed shell 604 and the fixed ring 605 is reduced to form negative pressure, the negative pressure is transmitted to the four third fixed shells 601 through the guide tube 603 and the third gas guide holes 602, namely, the four third fixed shells 601 adsorb and fix the silicon carbide wafer, the operation of polishing the adsorbed and fixed silicon carbide wafer is repeated, the automation of the operation is increased, and the working efficiency is improved.
After finishing the polishing operation, as the sliding column 111 moves onto the rotating roller of the first fixing frame 701 again after polishing, the control terminal 101 starts the third electric push rod 606 to reversely work and reset, the fixation of the silicon carbide wafer is released, and then the polished silicon carbide wafer is moved to other processing links.
The above description of embodiments of the invention has been presented with reference to the drawings and is not intended to limit the scope of the claims. Any modifications, equivalent substitutions and improvements made by those skilled in the art without departing from the scope and spirit of the present invention shall fall within the scope of the appended claims.
Claims (10)
1. The polishing equipment for the silicon carbide wafer is characterized by comprising a support (1), a control terminal (101) is arranged on the side wall of the support (1), a first support (102) is fixedly connected to the side wall of the support (1), a rotating frame (103) is arranged on the first support (102) through an electric rotating shaft, a symmetrical first sliding shell (104) is slidably arranged on the rotating frame (103), a double-shaft motor (105) is fixedly connected to the side wall of the first sliding shell (104), a rotating shell (106) is rotatably arranged on the lower portion of the first sliding shell (104), one output shaft of the double-shaft motor (105) is in transmission with the rotating shell (106) through a gear set, a spline shaft (107) is arranged on the limiting sliding of the rotating shell (106), a symmetrical first electric push rod (108) is fixedly connected to the lower side face of the first sliding shell (104), a rotating ring (109) is fixedly connected to the telescopic end of the first electric push rod (108) jointly, a rotating ring (109) is rotatably arranged on the first spline shaft (107) fixedly connected with the first sliding shell (110), a first support (110) is arranged on one side of the support (111) close to the silicon carbide column (1), the output shaft rigid coupling of first servo motor (112) has rolling disc (113), rolling disc (113) are located in support (1), rolling disc (113) dismantlement formula installs and beats mill (114), rolling frame (103) are provided with symmetrical reciprocating mechanism (2).
2. A polishing apparatus for silicon carbide wafers as set forth in claim 1, wherein said sliding column (111) is provided with first air holes (1111) uniformly distributed in the circumferential direction and second air holes (1112) uniformly distributed in the circumferential direction, said first air holes (1111) and said second air holes (1112) being alternately distributed.
3. A polishing apparatus for silicon carbide wafers as claimed in claim 1, wherein the reciprocating mechanism (2) comprises a reciprocating screw (201), the reciprocating screw (201) is fixedly connected to the rotating frame (103), the first sliding housing (104) is provided with a through hole for passing through adjacent to the reciprocating screw (201), the first sliding housing (104) is rotatably provided with a rotating block (202), the rotating block (202) is in threaded fit with the adjacent reciprocating screw (201), a rotating rod (203) is rotatably provided on a side wall of the first sliding housing (104) through a supporting frame, a first rotating wheel (204) is fixedly connected between the rotating rod (203) and the rotating block (202) through a bevel gear set, a second sliding housing (205) is rotatably provided on an output shaft limiting side of the biaxial motor (105) adjacent to the first rotating wheel (204), and the second sliding housing (205) is fixedly connected with a second rotating wheel (206), and the second rotating wheel (206) is in fit with the first rotating wheel (204).
4. A polishing apparatus for silicon carbide wafers according to claim 3, wherein a second electric push rod (3) is fixedly connected to the lower side surface of said first sliding housing (104), the telescopic end of said second electric push rod (3) is rotatably connected to said second sliding housing (205) through a connecting plate, said first rotating wheel (204) is in the shape of a circular truncated cone, and one side of said first rotating wheel (204) cooperating with said second rotating wheel (206) is vertically arranged.
5. A polishing apparatus for silicon carbide wafers according to claim 1, further comprising a symmetrical adjusting mechanism (4), wherein the symmetrical adjusting mechanism (4) is disposed on the adjacent first fixing case (110), the adjusting mechanism (4) is used for adjusting the pressure between the sliding column (111) and the polishing plate (114), the first fixing case (110) and the adjacent sliding column (111) are in limited sliding, the first fixing case (110) and the adjacent sliding column (111) are matched to form a cylindrical cavity filled with hydraulic oil, the adjusting mechanism (4) comprises a threaded rod (401), the threaded rod (401) is rotatably disposed on the adjacent first fixing case (110), a second fixing case (402) is fixedly connected to the side wall of the first fixing case (110), the second fixing case (402) is communicated with a cylindrical cavity formed by the adjacent first fixing case (110) and the adjacent sliding column (111), the second fixing case (403) is provided with a first sliding frame (403) and a second sliding frame (403), and the adjacent sliding frame (403) is provided with a threaded rod (404), and the threaded rod (403) is matched with the adjacent sliding frame (404).
6. A polishing apparatus for silicon carbide wafers as set forth in claim 5 wherein the side wall of said first carriage (403) is provided with graduations, said graduations of said first carriage (403) cooperating with the upper side of said second stationary housing (402) for precisely adjusting the pressure between said slide column (111) and said polishing plate (114).
7. A polishing apparatus for silicon carbide wafers according to claim 1, further comprising a flow guiding mechanism (5) for controlling circulation of polishing liquid, said flow guiding mechanism (5) being disposed on said support (1), said flow guiding mechanism (5) comprising a second bracket (501), said second bracket (501) being fixedly connected to a side wall of said support (1), said second bracket (501) being fixedly connected with a water pump (502), a first liquid guiding tube (503) and a second liquid guiding tube (504), said first liquid guiding tube (503) and said second liquid guiding tube (504) being both in communication with said water pump (502), and said first liquid guiding tube (503) being disposed on an upper portion of said second liquid guiding tube (504), said first liquid guiding tube (503) being provided with evenly distributed shower nozzles, said second liquid guiding tube (504) being provided with a filter screen.
8. A polishing apparatus for silicon carbide wafers as set forth in claim 7 wherein said inner side wall of said holder (1) is of a truncated cone shape and said inner side wall of said holder (1) is provided with an annular groove, and said side wall of said rotating disk (113) is provided with baffle plates (505) circumferentially equally spaced, said baffle plates (505) being opposed to said annular groove of said holder (1).
9. A polishing apparatus for silicon carbide wafers according to claim 5, further comprising a symmetrical adsorption mechanism (6), wherein the symmetrical adsorption mechanism (6) is respectively disposed on the adjacent sliding columns (111), the adsorption mechanism (6) comprises a third circumferentially equidistant fixing shell (601), the circumferentially equidistant third fixing shell (601) is embedded in the adjacent sliding column (111), a third air vent (602) is disposed in the sliding column (111), the third air vent (602) is communicated with the adjacent third fixing shell (601), the first circular tube (110) is fixedly connected with a guide tube (603), the guide tube (603) penetrates the adjacent sliding column (111) and is slidably connected with the same, a fourth fixing shell (604) is fixedly connected with a side wall of the first fixing shell (110), the fourth fixing shell (604) is fixedly connected with the adjacent third air vent (602), a third fixing ring (605) is fixedly connected with the fourth fixing shell (604), a fourth fixing ring (605) is fixedly connected with the adjacent third fixing ring (605), a third push rod (605) is fixedly connected with the fourth fixing ring (605), the push rod of the third electric push rod (606) is positioned in the circular tube of the fixed ring (605), and the first bracket (102) is provided with a centering component (7) for adjusting the position of the silicon carbide wafer.
10. A polishing apparatus for silicon carbide wafers according to claim 9, characterized in that said centering assembly (7) comprises a first fixed frame (701), said first fixed frame (701) being fixedly connected to a side wall of said first support (102), said first fixed frame (701) being provided with uniformly distributed rotating rollers, a second fixed frame (702) being fixedly connected to a lower side of said first fixed frame (701), said second fixed frame (702) being fixedly connected to a second servomotor (703), an output shaft of said second servomotor (703) being fixedly connected to a gear, said second fixed frame (702) being slidably provided with a rack (704) being centrally symmetrical, said rack (704) being in gear engagement with said second servomotor (703), said first fixed frame (701) being slidably provided with a second symmetrical slide (705), said second slide (705) being fixedly connected to an adjacent rack (704).
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| US4869779A (en) * | 1987-07-27 | 1989-09-26 | Acheson Robert E | Hydroplane polishing device and method |
| EP0751553A2 (en) * | 1995-06-29 | 1997-01-02 | Delco Electronics Corporation | No coat backside wafer grinding process |
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