CN117334775A - High-transmission-rate photodiode of optical fiber receiving circuit and process method - Google Patents
High-transmission-rate photodiode of optical fiber receiving circuit and process method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
Abstract
The invention provides a photodiode with high transmission rate of an optical fiber receiving circuit and a process method. A high transmission rate photodiode of a fiber optic receiving circuit, comprising: an N-type substrate; the N+ region is respectively injected into two sides of the upper part of the N-type substrate to form the N+ region, and a contact hole is formed in the N+ region to lead out the anode of the photodiode; a P-region is implanted on the N-type substrate to form the P-region, and the P-region is positioned between adjacent N+ regions; a P+ region, wherein the P+ region is formed by implantation in the P-region; a contact hole is formed in the P+ region to lead out the cathode of the photodiode; and the polycrystalline light-transmitting layer is arranged above the P-region. The invention improves the photoelectric conversion rate and conversion efficiency of the photodiode, increases the same photosensitive current to twice the original photosensitive current, reduces the parasitic capacitance to 50% of the original photosensitive current, ensures that no error code occurs when the receiving and transmitting end is far, and meets the requirements of high-speed data transmission of various high-quality sound equipment.
Description
Technical Field
The invention relates to the field of photodiodes, in particular to a photodiode with high transmission rate of an optical fiber receiving circuit and a process method.
Background
Digital fiber optic audio: the audio input/output interface of the sound equipment uses an optical fiber access mode;
transmission rate: the method refers to the transmission speed of data from one point to another point, and is an important index in optical fiber communication, wherein the transmission speed has bit and baud;
photodiode (PD): a sensing device converting an optical signal into an electrical signal;
audio data: digital sound obtained by analog-to-digital conversion (ADC) of an audio signal at a certain frequency; an important index of the audio data is the sampling frequency, that is, the sampling times in unit time, the larger the sampling frequency, the smaller the interval between sampling points, the more realistic the digitized sound, but the more difficult the corresponding data volume is to be processed.
The optical fiber audio communication is a data transmission mode using an optical fiber as a transmission medium, and compared with the traditional analog signal transmission mode, the optical fiber audio transmission can support multichannel transmission effects such as dolby digital stereo and the like; in addition, in the transmission process of the digital optical fiber audio line, the external electromagnetic interference can be completely stopped, so that a clear tone quality analysis effect is ensured.
In the current market, a silicon photodiode technology is mostly utilized, and a photodiode, a signal feedback amplifying circuit, a filter circuit, a high-speed comparator circuit and the like are integrated on a silicon substrate to realize the receiving, amplifying and adjusting of an optical fiber audio signal. The prior art signal flow is shown in fig. 1.
The photoelectric signal conversion in the prior art is realized by using a photodiode, the process of the photodiode is compatible with the standard CMOS process flow, and the structure of the photodiode is shown in fig. 2.
In the prior art, the surface of the photodiode is covered with an oxide layer in the conventional process, and the oxide layer is generally a passivation protection layer, and the process is not controlled precisely. In optical fiber communication of audio digital signals, usually, modulated audio digital signals are loaded on red light with the wavelength of 610nm-650nm, the red light is transmitted to a receiving circuit by an optical fiber, and a photodiode in the receiving circuit converts the optical signals into electrical signals.
The photodiode in the prior art is formed by N-well and P-type injection, and the structure has the defects that the photoelectric conversion efficiency is low, the photosurface area of the photodiode needs to be increased in order to meet the requirement of high sensitivity, and the parasitic PN junction capacitance of the photodiode is also increased simultaneously when the photosurface area is increased, so that the data transmission rate of an optical fiber is limited, 24-bit/192 kHz optical fiber audio communication cannot be supported in the prior art, and the bandwidth is insufficient to support the compressed dolby digital and DTS surround sound audio data transmission.
Disclosure of Invention
The invention aims to provide a photodiode with high transmission rate of an optical fiber receiving circuit and a process method.
The invention aims to solve the problems that the photoelectric conversion efficiency of a photodiode in the prior art is low, and the optical fiber receiving sensitivity and the high transmission rate cannot be realized simultaneously.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in a first aspect of the present disclosure, a high transmission rate photodiode of a fiber optic receiving circuit is provided, comprising: an N-type substrate; the N+ region is respectively injected into two sides of the upper part of the N-type substrate to form the N+ region, and a contact hole is formed in the N+ region to lead out the anode of the photodiode; a P-region is implanted on the N-type substrate to form the P-region, the P-region is positioned between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P-region; a P+ region is implanted in the P-region to form the P+ region, and ohmic contact is formed between the P+ region and the P-region; a contact hole is formed in the P+ region to lead out the cathode of the photodiode; and the polycrystalline light-transmitting layer is arranged above the P-region.
As a further improvement, the resistivity of the N-type substrate material is 10-100ohm-cm.
As a further improvement, the implantation material of the P-region is B ions.
As a further improvement, the P-region is implanted at a dose of 1E13-1E14.
As a further improvement, the implantation energy of the P-region is 10KeV to 100KeV.
As a further improvement, the implantation push junction depth of the P-region is 3um-6um.
As a further improvement, the top end of the N-type substrate is provided with a photosensitive surface.
As a further improvement, an antireflection film is formed on the surface of the photodiode.
As a further improvement, the thickness of the polycrystalline light transmitting layer is 100nm to 400nm.
In a second aspect of the present disclosure, a process for fabricating a high transmission rate photodiode of an optical fiber receiving circuit is provided, including: forming an N-type substrate; respectively injecting and forming an N+ region at two sides of the upper part of the N-type substrate; opening a contact hole in the N+ region to lead out the anode of the photodiode; injecting a P-region on the N-type substrate, wherein the P-region is positioned between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P-region; injecting a P+ region into the P-region, and forming ohmic contact between the P+ region and the P-region; a contact hole is formed in the P+ region to lead out the cathode of the photodiode; and a polycrystalline light-transmitting layer is arranged above the P-region.
The beneficial effects of the invention are as follows:
the process platform adopted by the invention is an N-type substrate and P-well process; the N-type substrate is adopted, the photodiode directly pushes low-concentration P-injection on the substrate, the concentration of the P-injection is smaller, the junction depth is larger, therefore, the barrier capacitance of the PN junction can be reduced, and the photoelectric response speed of the photodiode is improved;
the anode of the photodiode is connected with the N-substrate, the photodiode is a PN junction diode formed by the N-substrate and the P-injection, and the photoelectric conversion efficiency of the photodiode is maximized by adjusting the junction depth of the P-injection and the injection concentration;
the invention aims to solve the defect of low data transmission rate in the prior art, and provides a realization method of a photodiode suitable for high transmission rate, which reduces parasitic capacitance of the photodiode on one hand, improves photoelectric conversion efficiency of the photodiode, and compared with the photodiode with the same area in the prior art, the photosensitive current is increased to twice as much as the original photosensitive current, and the parasitic capacitance is less than half, so that the data transmission rate is greatly improved;
compared with the prior art, the photoelectric conversion efficiency of the photodiode is improved, and the photosensitive current is doubled as compared with the photodiode with the same area, and the photodiode is applied to an optical fiber transceiver circuit to form the optical fiber transceiver circuit with high sensitivity and high transmission rate, so that error codes are not generated when a receiving and transmitting end is far, and various high-quality acoustic requirements are met; by using the technology of the invention, the optical fiber receiving sensitivity can be improved to-30 dB when the transmission rate is 25Mbit/S, and can be improved to-33 dB when the transmission rate is reduced to 13.2 Mbit/S.
Drawings
Fig. 1 is a schematic diagram of a prior art signal flow.
Fig. 2 is a schematic structural view of a photodiode according to the prior art.
Fig. 3 is a schematic structural diagram of a photodiode with high transmission rate of an optical fiber receiving circuit according to an embodiment of the present invention.
Fig. 4 is a flow chart of a process method of a high transmission rate photodiode of an optical fiber receiving circuit according to an embodiment of the present invention.
Fig. 5 is a schematic diagram of the reflection phenomenon of light.
Fig. 6 is a schematic diagram of a process method of a high transmission rate photodiode of an optical fiber receiving circuit according to an embodiment of the present invention.
In the figure:
n-type substrate 2. Polycrystalline light transmission layer 3.N+ region 4.P-region 5.P +
A. Anode of photodiode b. cathode of photodiode
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.
It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application.
In the description of the present invention, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
Referring to fig. 3, a high transmission rate photodiode of a fiber optic receiving circuit, comprising: an N-type substrate 1; the N+ region 3 is respectively injected into two sides of the upper part of the N-type substrate 1 to form the N+ region 3, and a contact hole is formed in the N+ region 3 to lead out the anode of the photodiode; a P-region 4 is implanted on the N-type substrate 1 to form the P-region 4, the P-region 4 is positioned between the adjacent N+ regions 3, and a PN junction is formed between the N-type substrate 1 and the P-region 4; a P+ region 5 is implanted in the P-region 4 to form the P+ region 5, and ohmic contact is formed between the P+ region 5 and the P-region 4; a contact hole is formed in the P+ region 5 to lead out the cathode of the photodiode; and the polycrystalline light-transmitting layer 2 is arranged above the P-region 4.
The resistivity of the N-type substrate 1 material is 10-100ohm-cm.
The implantation material of the P-region 4 is B ions, the implantation dosage is 1E13-1E14, and the implantation energy is 10KeV-100KeV.
The implantation push junction depth of the P-region 4 is 3um-6um.
The top end of the P-region 4 is provided with a photosensitive surface, and the thickness of the polycrystalline light-transmitting layer 2 is 100nm-400nm.
Because the PN junction area of the photodiode is limited and cannot be too large due to the requirement of high transmission rate, the photoelectric conversion efficiency of the photodiode needs to be increased as much as possible to ensure high receiving sensitivity.
The anode of the photodiode is connected with the N-substrate, the photodiode is a PN junction diode formed by the N-substrate and the P-region, and the photoelectric conversion efficiency of the photodiode is maximized by adjusting the junction depth of the injection propulsion of the P-region and adjusting the injection concentration.
Referring to fig. 4 and 6, a process for fabricating a high transmission rate photodiode of a fiber optic receiver circuit includes: forming an N-type substrate; respectively injecting and forming an N+ region at two sides of the upper part of the N-type substrate; opening a contact hole in the N+ region to lead out the anode of the photodiode; injecting a P-region on the N-type substrate, wherein the P-region is positioned between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P-region; injecting a P+ region into the P-region, and forming ohmic contact between the P+ region and the P-region; a contact hole is formed in the P+ region to lead out the cathode of the photodiode; and a polycrystalline light-transmitting layer is arranged above the N-type substrate.
In the invention, a layer of polycrystal is deposited on the photosensitive surface of the photodiode, the polycrystal is a transparent medium layer, and the thickness of the polycrystal is precisely controlled, so that an antireflection film is formed on the surface of the photodiode.
The preparation method of the polycrystalline light-transmitting layer comprises the following steps: covering a light-transmitting layer with precisely controllable thickness on the surface of the photosensitive diode, wherein the light-transmitting layer is made of polycrystal (poly); removing a protective layer, typically silicon dioxide (SiO 2), covering the photosensitive surface of the photodiode; depositing a polycrystalline light-transmitting layer, wherein the thickness of the polycrystalline light-transmitting layer is 100nm-400nm; removing the polycrystalline light-transmitting layer outside the photosensitive surface; a polycrystalline transparent layer with good consistency and precisely controllable thickness is formed on the photosensitive surface.
Referring to fig. 5, light has a process of incidence and reflection in a dielectric layer, and the thickness of the dielectric layer determines the reflectivity of the incident light.
The invention aims to solve the defect of low data transmission rate in the prior art, and provides a realization method of a photodiode suitable for high transmission rate, which reduces parasitic capacitance of the photodiode on one hand, improves photoelectric conversion efficiency of the photodiode, and compared with the photodiode with the same area in the prior art, the photosensitive current is increased to twice and the parasitic capacitance is less than half of the original photosensitive current, so that the data transmission rate is greatly improved.
The technology of the invention can realize an optical fiber audio receiving circuit with high transmission rate, the transmission rate can be as high as 25Mbit/s, and the technology can be widely applied to multimedia entertainment systems such as digital cameras, video cameras, monitoring systems, high-definition video and audio playing systems, MD players, network televisions, digital televisions, satellite televisions, broadband networks, communication network systems, 3D, 4D high-definition digital cinema, digital imaging systems, automobiles, airplanes, ships and the like.
In signal transmission, the biggest factor affecting the transmission rate is parasitic capacitance, which is smaller as it is larger. In the technical scheme, an audio signal is loaded to red light and is transmitted to a signal receiving end through an optical fiber, after the receiving end receives the red light signal, the optical signal is converted into an electric signal through a photodiode, the photodiode is a diode formed by a PN junction, when an electric field is externally applied to the PN junction, a potential barrier capacitor, namely a parasitic capacitor exists, the magnitude of a potential barrier capacitor value is in direct proportion to the PN junction area, and meanwhile, the PN junction area determines the signal receiving sensitivity of the photodiode, so that the PN junction area is reduced, and the receiving sensitivity is reduced.
In the technical scheme, other circuit modules such as a signal feedback amplifying circuit, a filter circuit, a high-speed comparator circuit and the like are compatible, so that two process steps are added on the basis of a CMOS integrated circuit process, and an improved photodiode structure is shown in fig. 3.
Compared with the prior art photodiode shown in fig. 1, the invention adopts the N-type substrate, the photodiode directly pushes the P-injection with low concentration on the substrate, the barrier capacitance of the PN junction of the photodiode is generated between the N-type substrate and the P-injection with low concentration, and compared with fig. 1, the barrier capacitance of the PN junction of the prior art photodiode is generated between the NWELL and the P-injection with high concentration, and the advantages of adopting the photodiode structure are that: the barrier capacitance of the PN junction is directly proportional to the PN junction area, and inversely proportional to the doping concentration of P and N, namely, the lower the doping concentration is, the smaller the barrier capacitance is, and the lower the concentration of the N-type substrate is than NWELL, the lower concentration P-injection doping concentration is too light compared with the higher concentration P injection doping concentration, so that the barrier capacitance of the photodiode shown by the scheme is much smaller under the same PN junction area, and the requirement of high transmission rate can be met.
The process platform adopted by the invention is an N-type substrate and P-well process; the N-type substrate is adopted, the photodiode directly pushes low-concentration P-injection on the substrate, the concentration of the P-injection is smaller, the junction depth is larger, therefore, the barrier capacitance of the PN junction can be reduced, and the photoelectric response speed of the photodiode is improved;
compared with the prior art, the photoelectric conversion efficiency of the photodiode is improved, and the photosensitive current is doubled as compared with the photodiode with the same area, and the photodiode is applied to an optical fiber transceiver circuit to form the optical fiber transceiver circuit with high sensitivity and high transmission rate, so that error codes are not generated when a receiving and transmitting end is far, and various high-quality acoustic requirements are met; by using the technology of the invention, the optical fiber receiving sensitivity can be improved to-30 dB when the transmission rate is 25Mbit/S, and can be improved to-33 dB when the transmission rate is reduced to 13.2 Mbit/S.
The above examples are only for illustrating the technical scheme of the present invention and are not limiting. It will be understood by those skilled in the art that any modifications and equivalents that do not depart from the spirit and scope of the invention are intended to be within the scope of the appended claims.
Claims (10)
1. A high transmission rate photodiode of a fiber optic receiver circuit, comprising:
an N-type substrate;
the N+ region is respectively injected into two sides of the upper part of the N-type substrate to form the N+ region, and a contact hole is formed in the N+ region to lead out the anode of the photodiode;
a P-region is implanted on the N-type substrate to form the P-region, the P-region is positioned between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P-region;
a P+ region is implanted in the P-region to form the P+ region, and ohmic contact is formed between the P+ region and the P-region; a contact hole is formed in the P+ region to lead out the cathode of the photodiode;
and the polycrystalline light-transmitting layer is arranged above the P-region.
2. The high transmission rate photodiode of a fiber optic receiver circuit of claim 1 wherein said N-type substrate material has a resistivity of 10-100ohm-cm.
3. The high transmission rate photodiode of the fiber optic receiver circuit of claim 1 wherein said P-region implant material is B ions.
4. A high transmission rate photodiode of a fiber optic receiver circuit as claimed in claim 3 wherein said P-region is implanted at a dose of 1E13-1E14.
5. The high transmission rate photodiode of a fiber optic receiver circuit of claim 4 wherein said P-region implant energy is between 10KeV and 100KeV.
6. The high transmission rate photodiode of the fiber optic receiver circuit of claim 1 wherein said P-region has an injection push junction depth of 3um-6um.
7. A high transmission rate photodiode of a fiber optic receiver circuit according to claim 1 wherein the top of said P-region is provided with a photosurface.
8. The high transmission rate photodiode of an optical fiber receiving circuit according to claim 1, wherein an antireflection film is formed on the surface of the photodiode.
9. The high transmission rate photodiode of a fiber optic receiver circuit of claim 1 wherein said polycrystalline light transmissive layer has a thickness of 100nm to 400nm.
10. A process for fabricating a high transmission rate photodiode for an optical fiber receiving circuit, comprising:
forming an N-type substrate;
respectively injecting and forming an N+ region at two sides of the upper part of the N-type substrate;
opening a contact hole in the N+ region to lead out the anode of the photodiode;
injecting a P-region on the N-type substrate, wherein the P-region is positioned between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P-region;
injecting a P+ region into the P-region, and forming ohmic contact between the P+ region and the P-region;
a contact hole is formed in the P+ region to lead out the cathode of the photodiode;
and a polycrystalline light-transmitting layer is arranged above the P-region.
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|---|---|---|---|---|
| JPH03203266A (en) * | 1989-12-28 | 1991-09-04 | Hamamatsu Photonics Kk | Semiconductor device |
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