CN117328068A - Tungsten plug chemical mechanical polishing solution for reducing dishing and application thereof - Google Patents
Tungsten plug chemical mechanical polishing solution for reducing dishing and application thereof Download PDFInfo
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- CN117328068A CN117328068A CN202210718712.1A CN202210718712A CN117328068A CN 117328068 A CN117328068 A CN 117328068A CN 202210718712 A CN202210718712 A CN 202210718712A CN 117328068 A CN117328068 A CN 117328068A
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- chemical mechanical
- mechanical polishing
- tungsten
- tungsten plug
- plug chemical
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- 238000005498 polishing Methods 0.000 title claims abstract description 72
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 68
- 239000010937 tungsten Substances 0.000 title claims abstract description 68
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 239000000126 substance Substances 0.000 title claims abstract description 51
- 238000005260 corrosion Methods 0.000 claims abstract description 19
- 230000007797 corrosion Effects 0.000 claims abstract description 19
- 239000003112 inhibitor Substances 0.000 claims abstract description 19
- 239000007800 oxidant agent Substances 0.000 claims abstract description 17
- 239000003054 catalyst Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 230000001590 oxidative effect Effects 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 28
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910021485 fumed silica Inorganic materials 0.000 claims description 11
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000008119 colloidal silica Substances 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- CEAIOKFZXJMDAS-UHFFFAOYSA-N 1-methyl-4-nitrosopiperazine Chemical compound CN1CCN(N=O)CC1 CEAIOKFZXJMDAS-UHFFFAOYSA-N 0.000 claims description 5
- WNSYEWGYAFFSSQ-UHFFFAOYSA-N n,n'-dinitrosopiperazine Chemical compound O=NN1CCN(N=O)CC1 WNSYEWGYAFFSSQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 3
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 3
- SATVIFGJTRRDQU-UHFFFAOYSA-N potassium hypochlorite Chemical compound [K+].Cl[O-] SATVIFGJTRRDQU-UHFFFAOYSA-N 0.000 claims description 3
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 3
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- -1 Ti/TIN Chemical class 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000002028 premature Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005588 protonation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
- C23F3/06—Heavy metals with acidic solutions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a tungsten plug chemical mechanical polishing solution for reducing dishing and application thereof, wherein the polishing solution comprises the following components in percentage by mass: 2% -20% of abrasive, 0.5% -5% of oxidant, 0.01% -0.5% of tungsten catalyst, 0.01% -0.05% of corrosion inhibitor and the balance of deionized water. The tungsten plug chemical mechanical polishing solution can effectively remove tungsten and has the characteristic of less concave.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing, in particular to tungsten plug chemical mechanical polishing liquid capable of reducing dishing and application thereof.
Background
With the continued development of semiconductor technology and the increasing number of interconnection layers for large scale integrated circuits, the planarization techniques of conductive layers and insulating dielectric layers have become particularly critical. Chemical Mechanical Polishing (CMP) technology, originated by IBM corporation, was considered the most effective method of global planarization at present.
Chemical Mechanical Polishing (CMP) consists of a combination of chemical action, mechanical action, and both actions. It generally consists of a polishing table with a polishing pad and a polishing head for carrying the chip. Wherein the polishing head holds the chip and then presses the front surface of the chip against the polishing pad. When performing chemical mechanical polishing, the polishing head moves linearly over the polishing pad or rotates in the same direction as the polishing platen. At the same time, slurry containing abrasive is dropped onto the polishing pad and laid flat on the polishing pad by centrifugation. The chip surface is globally planarized under the dual actions of machinery and chemistry.
The main mechanism for Chemical Mechanical Polishing (CMP) of metal layers is believed to be: the oxidizing agent oxidizes the metal surface to form a film, the grinding agent represented by silicon dioxide and aluminum oxide mechanically removes the oxide film, and new metal surface is generated to be oxidized continuously, and the two effects are cooperated.
The method mainly uses tungsten plug as one of Chemical Mechanical Polishing (CMP) targets in chips, wherein the tungsten plug is formed by forming a hole with a depth ratio on the surface of an insulating layer through photoetching, etching and other processes on the insulating layer, then gradually depositing metals such as Ti/TIN, W and the like on the hole through CVD and other processes to form a preliminary tungsten plug structure, and then removing superfluous tungsten on the surface of the insulating layer through a CMP technology, wherein after the superfluous tungsten is removed to a certain extent, the tungsten and the insulating layer are simultaneously subjected to CMP together, the tungsten removal rate is usually far greater than the removal rate of the insulating layer in the process, and the excessive tungsten removal is caused by the large difference of the tungsten removal rates, so that the chips are invalid. Therefore, it is very important how to ensure that the generation of the concave is reduced in the planarization process, and the proper tungsten polishing solution can regulate and control the tungsten removal rate, so that the tungsten removal rate is far greater than the removal rate of the insulating layer, the concave generation is reduced, and the tungsten polishing solution has very important effect on the yield of devices. The prior art such as the CN101600773a patent adopts imidazole substances, but the substances have a protective effect on static etching and have no effect on the regulation of the speed, so the dishing is not assisted by adding the azole substances.
Therefore, it is necessary to minimize the occurrence of dishing during tungsten plug planarization.
Disclosure of Invention
In order to solve the problems, the invention provides a tungsten plug chemical mechanical polishing solution for reducing the dishing, which can effectively reduce the dishing in the tungsten plug planarization process by adding a corrosion inhibitor with a special structure, thereby improving the WAFER yield.
It is another object of the present invention to provide the use of such dishing-reducing tungsten plug cmp slurry in tungsten cmp.
In order to achieve the above object, the present invention adopts the following technical scheme:
a tungsten plug chemical mechanical polishing solution for reducing dishing comprises the following components in percentage by mass: 2% -20% of abrasive, 0.5% -5% of oxidant, 0.01% -0.5% of tungsten catalyst, 0.01% -0.05% of corrosion inhibitor and the balance of deionized water.
In a preferred embodiment, the dishing-reducing tungsten plug chemical mechanical polishing solution comprises the following components in mass percent: 5 to 15 percent of grinding agent, 1 to 3 percent of oxidant, 0.05 to 0.2 percent of tungsten catalyst, 0.01 to 0.035 percent of corrosion inhibitor and the balance of deionized water.
In a specific embodiment, the corrosion inhibitor is selected from heterocyclic materials containing nitro groups and containing non-conjugated structures.
In a preferred embodiment, the heterocyclic substance containing a nitro group and a non-conjugated structure is at least any one of 1, 4-dinitroso piperazine and 1-methyl-4-nitrosopiperazine.
In a specific embodiment, the abrasive is colloidal silica, preferably ultra-high purity colloidal silica.
In a preferred embodiment, the colloidal silica is fumed silica having a specific surface area of from 80 to 120m 2 /g; further toPreferably, the fumed silica has a particle size in aqueous solution of from 100 to 180nm.
In a specific embodiment, the oxidizing agent is selected from one or more of hydrogen peroxide, potassium persulfate, ammonium persulfate, sodium hypochlorite, or potassium hypochlorite; hydrogen peroxide is preferred.
In a specific embodiment, the tungsten catalyst is an iron salt, preferably iron nitrate.
In a specific embodiment, the deionized water is ultrapure water having a resistivity of not less than 18 megaohms.
In a specific embodiment, the pH of the tungsten plug chemical mechanical polishing solution is in the range of 2.0 to 2.5.
In yet another aspect of the present invention, the use of the dishing-reducing tungsten plug chemical mechanical polishing slurry described above in tungsten chemical mechanical polishing.
Compared with the prior art, the invention has the advantages that:
the dishing-reducing tungsten plug chemical mechanical polishing solution reduces dishing caused by the tungsten plug during polishing by adding the corrosion inhibitor with the specific structure, and effectively improves the yield of WAFER, thereby realizing the application in the semiconductor field, in particular to the chemical mechanical polishing.
The corrosion inhibitor of the present invention is a heterocyclic substance containing a nitro group and containing a non-conjugated structure, and is useful as a corrosion inhibitor mainly because the heterocyclic nitrogen substance containing a nitro group and containing a non-conjugated structure can reduce the removal rate of tungsten plugs mainly due to two factors: the nitro has the reducing performance and reacts with hydroxyl radicals, so that the tungsten plug is reduced to be oxidized into a softer oxide layer, and finally the polishing rate is reduced; the second is that the heterocyclic nitrogen substance has strong protonation capability and positive charges on the surface, and is effectively adsorbed on the surface of tungsten to form a protective layer, so that the chemical reaction of tungsten is inhibited, the generation of pits can be effectively reduced by superposition of the two factors, and the planarization effect is positively promoted.
Detailed Description
The following examples will further illustrate the method provided by the present invention for a better understanding of the technical solution of the present invention, but the present invention is not limited to the examples listed but should also include any other known modifications within the scope of the claims of the present invention.
A tungsten plug chemical mechanical polishing solution for reducing dishing comprises an abrasive, an oxidant, a catalyst, a corrosion inhibitor, and deionized water in balance.
In a preferred embodiment, the dishing-reducing tungsten plug chemical mechanical polishing solution comprises the following components in percentage by mass: 2% -20% of abrasive, 0.5% -5% of oxidant, 0.01% -0.5% of tungsten catalyst, 0.01% -0.05% of corrosion inhibitor and the balance of deionized water, wherein the corrosion inhibitor is at least any one of heterocyclic substances containing nitro and non-conjugated structures, such as 1, 4-dinitroso piperazine and 1-methyl-4-nitrosopiperazine. Namely, the polishing solution is taken as 100 percent, wherein the abrasive accounts for 2 to 20 percent, the oxidant accounts for 0.5 to 5 percent, the tungsten catalyst accounts for 0.01 to 0.5 percent, the corrosion inhibitor accounts for 0.05 to 5 percent, and the balance is water.
Wherein, as the abrasive, for example, fumed silica, which may be commercial fumed silica, preferably has a specific surface area of 80 to 120m 2 And/g fumed silica having an effective particle diameter of silica colloid particles of an aqueous solution of fumed silica dissolved in water of 100nm to 180nm. The effective particle size can be detected, for example, by a Dynamic Light Scattering (DLS) method. The mass percentage of the fumed silica in the polishing solution is 2% -20%, including, for example, but not limited to, 2%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, and preferably 5% -15%.
The oxidizing agent is, for example, one or more of hydrogen peroxide, potassium persulfate, ammonium persulfate, sodium hypochlorite or potassium hypochlorite, preferably hydrogen peroxide, i.e., hydrogen peroxide. The mass percentage of the oxidizing agent in the polishing solution is 0.5% -5%, including, for example, but not limited to, 0.5%, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%, and preferably 1% -3%. The oxidizing agent is preferably added prior to use, avoiding premature decomposition by premature addition, as is well known to those skilled in the art.
As the tungsten catalyst, there may be mentioned iron salts, i.e., iron ion-containing salt compounds, such as nitrate, hydrochloride, sulfate, hydrochloride, etc. including but not limited to iron, preferably iron nitrate, of which both nitrate ions and iron ions can function. In the presence of hydrogen peroxide oxidant, fenton reaction occurs to promote the chemical mechanical polishing process and raise polishing rate. The mass percentage of the catalyst ferric nitrate in the polishing solution is 0.01% -0.5%, including, but not limited to, 0.01%, 0.015%, 0.02%, 0.025%, 0.03%, 0.035%, 0.04%, 0.045%, 0.5%, and preferably 0.05% -0.2%.
As the corrosion inhibitor, at least any one selected from the group consisting of heterocyclic substances which are nitro and contain a non-conjugated structure, such as 1, 4-dinitroso piperazine and 1-methyl-4-nitrosopiperazine. The content of the corrosion inhibitor in the polishing solution is 0.01-0.05% by mass, including, but not limited to, 0.01%, 0.02%, 0.025%, 0.03%, 0.035%, 0.04%, 0.045%, 0.05%, and preferably 0.01-0.035%.
Typically, the dishing-reducing tungsten plug chemical mechanical polishing solution has a pH of 2.0-2.5 and can be adjusted with an acid or base, such as potassium hydroxide or nitric acid, and can also be adjusted with an acid or base as is commonly used in the art.
Wherein the oxidizing agent may also be added prior to use, as will be appreciated by those skilled in the art, and which are also within the scope of the present invention.
The invention is further illustrated, but not limited, by the following more specific examples.
The main raw material sources used in the following examples or comparative examples are as follows:
fumed silica, AERISOL, germany, micron-sized, specific surface area 90g/m 2 ；
1, 4-dinitroso piperazine, 1-methyl-4-nitrosopiperazine, analytical grade, national medicine group
The main detection method is as follows:
depth of tungsten plug recessThe depression depth is detected by a step gauge device.
The above test methods all adopt industry standard processes, and are not described herein.
The polishing solutions of the following examples and comparative examples were prepared according to the components and contents of the respective components in the following tables.
Preparing chemical mechanical polishing solution according to the formula in the table, uniformly mixing, regulating the pH value to 2.0-2.5 by using nitric acid or KOH, adding 0.5-5% of hydrogen peroxide before use, and supplementing water to 100% by mass percent to obtain the tungsten plug polishing solution with reduced dishing.
The wafers containing tungsten were polished using the chemical mechanical polishing solutions of the above examples and comparative examples, respectively. The polishing conditions were: polishing was performed using a Mirra polisher using an IC1010 polishing pad at a polishing pressure of 2.5psi and a polishing fluid flow rate of 150mL/min. And measuring the polishing rate of the polishing solution on tungsten, and simultaneously carrying out pitting detection on the polished tungsten target by adopting a biological microscope, wherein the detection results are listed in the table.
From the above examples 1, 3-5 and comparative examples 1-4, it was found that the concentrations of ferric nitrate and hydrogen peroxide must be within a certain range to have a certain effect on the improvement of the tungsten polishing rate.
From the above examples 2, 6 and comparative examples 5 to 6, it was found that the concentration of the corrosion inhibitor had an excellent effect in reducing the degree of dishing within a certain range.
As can be seen from the above examples 6 and 7, the attachment of the nitro group to the conjugated structure affects the reducibility and ultimately the polishing effect.
In summary, compared with the prior art, the polishing solution provided by the invention is used for the tungsten chemical mechanical polishing process, the polishing rate is greatly improved after fumed silica is used as an abrasive and the oxidizing agent hydrogen peroxide and the catalyst ferric nitrate are added, and the dishing condition is greatly improved after a proper amount of corrosion inhibitor is added, so that the polishing solution has a positive effect on the tungsten chemical mechanical polishing.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Those skilled in the art will appreciate that certain modifications and adaptations of the invention are possible and can be made under the teaching of the present specification. Such modifications and adaptations are intended to be within the scope of the present invention as defined in the appended claims.
Claims (10)
1. The tungsten plug chemical mechanical polishing solution for reducing dishing is characterized by comprising the following components in percentage by mass: 2% -20% of abrasive, 0.5% -5% of oxidant, 0.01% -0.5% of tungsten catalyst, 0.01% -0.05% of corrosion inhibitor and the balance of deionized water; preferably, the composition comprises the following components in percentage by mass: 5 to 15 percent of grinding agent, 1 to 3 percent of oxidant, 0.05 to 0.2 percent of tungsten catalyst, 0.01 to 0.035 percent of corrosion inhibitor and the balance of deionized water.
2. The tungsten plug chemical mechanical polishing slurry of claim 1 wherein the corrosion inhibitor is selected from the group consisting of heterocyclic substances containing nitro groups and containing non-conjugated structures.
3. The tungsten plug chemical mechanical polishing liquid according to claim 2, wherein the heterocyclic substance containing a nitro group and a non-conjugated structure is at least any one of 1, 4-dinitroso piperazine and 1-methyl-4-nitrosopiperazine.
4. A tungsten plug chemical mechanical polishing liquid according to any one of claims 1 to 3, wherein the abrasive is colloidal silica, preferably ultra-pure colloidal silica.
5. The tungsten plug chemical mechanical polishing slurry of claim 4 wherein the colloidal silica is fumed silica having a specific surface area of 80-120m 2 /g; further preferably, the fumed silica has a particle size in an aqueous solution of 100 to 180nm.
6. A tungsten plug chemical mechanical polishing solution according to any one of claims 1 to 3, wherein the oxidizing agent is selected from one or more of hydrogen peroxide, potassium persulfate, ammonium persulfate, sodium hypochlorite, and potassium hypochlorite; hydrogen peroxide is preferred.
7. A tungsten plug chemical mechanical polishing solution according to any one of claims 1 to 3, wherein the tungsten catalyst is an iron salt, preferably iron nitrate.
8. A tungsten plug chemical mechanical polishing liquid according to any one of claims 1 to 3, wherein the deionized water is ultrapure water having a resistivity of not less than 18mΩ/cm.
9. A tungsten plug chemical mechanical polishing liquid according to any one of claims 1 to 3, wherein the pH of the tungsten plug chemical mechanical polishing liquid is 2.0 to 2.5.
10. Use of the tungsten plug chemical mechanical polishing solution according to any one of claims 1 to 9 in tungsten chemical mechanical polishing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210718712.1A CN117328068A (en) | 2022-06-23 | 2022-06-23 | Tungsten plug chemical mechanical polishing solution for reducing dishing and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210718712.1A CN117328068A (en) | 2022-06-23 | 2022-06-23 | Tungsten plug chemical mechanical polishing solution for reducing dishing and application thereof |
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| CN117328068A true CN117328068A (en) | 2024-01-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118406439A (en) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing composition and application thereof in tungsten chemical mechanical polishing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118406439A (en) * | 2024-07-01 | 2024-07-30 | 万华化学集团电子材料有限公司 | Chemical mechanical polishing composition and application thereof in tungsten chemical mechanical polishing |
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