CN117318645A - Piezoelectric resonator structure and growth method thereof - Google Patents

Piezoelectric resonator structure and growth method thereof Download PDF

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Publication number
CN117318645A
CN117318645A CN202311241922.7A CN202311241922A CN117318645A CN 117318645 A CN117318645 A CN 117318645A CN 202311241922 A CN202311241922 A CN 202311241922A CN 117318645 A CN117318645 A CN 117318645A
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layer
piezoelectric resonator
epsilon
aln
energy
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陈梓敏
王钢
陈伟驱
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Sun Yat Sen University
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Sun Yat Sen University
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
    • H03H9/02622—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface

Abstract

The invention discloses a piezoelectric resonator structure and a growth method thereof, and the piezoelectric resonator comprises the following components in sequence from bottom to top: the silicon substrate, the AlN inserting layer, the energy binding layer, the epsilon-phase gallium oxide layer and the interdigital electrode; the energy binding layer is distributed with openings, and the openings penetrate through the energy binding layer downwards until the AlN inserting layer is exposed; the epsilon-phase gallium oxide layer grows from the exposed AlN inserting layer, upwards grows through the opening holes, and then transversely grows to cover the whole energy binding layer; the rate at which the acoustic wave propagates in the energy-binding layer is lower than the rate at which the acoustic wave propagates in the silicon substrate and the AlN insertion layer. The invention solves the problem of epsilon-Ga by adopting a method of transversely growing a film 2 O 3 The problem that the film growth is limited by the substrate, and finally, the high-performance epsilon-Ga based on the silicon substrate is constructed 2 O 3 A surface acoustic wave resonator structure.

Description

Piezoelectric resonator structure and growth method thereof
Technical Field
The invention relates to the technical field of semiconductors, in particular to a piezoelectric resonator structure and a growth method thereof.
Background
Piezoelectric resonator widely applied to mobile communicationThe communication field is a core component of the radio frequency filter; with the increasing complexity of the communication band in the 5G communication era, the importance of piezoelectric resonators is increasingly prominent. The resonator can be applied to the fields of pressure sensors, temperature sensors, chemical sensors and the like besides the communication field. The gallium oxide semiconductor material has ultra-wide forbidden bandwidth, good insulativity and strong leakage-proof capacity, and is suitable for preparing semiconductor devices; gallium oxide has five phases of beta, epsilon, alpha, gamma and delta, and research literature indicates (European Physical Journal B7,93,2020), epsilon-phase gallium oxide (epsilon-Ga) 2 O 3 ) The film material also has the characteristic of large piezoelectric coefficient. Thus, ε -Ga 2 O 3 The film material is suitable for preparing piezoelectric resonators with high Q value and high electromechanical coupling coefficient, and has good application prospect in the fields of radio frequency communication and the like. While silicon (111) may be used as epsilon-Ga 2 O 3 The gallium oxide piezoelectric resonator is prepared on a large-sized silicon substrate, which is beneficial to reducing the cost.
The radio frequency signal propagates mainly in an acoustic wave mode in the piezoelectric resonator, and since the acoustic wave speed of the silicon material is low, the acoustic wave energy in the piezoelectric layer is easy to leak to the substrate, resulting in the performance degradation of the piezoelectric resonator. The document (CN 108631747A) can realize the restraint of sound wave energy by adding a silicon dioxide low sound velocity layer below the piezoelectric layer, and prevent the sound wave energy from leaking into the silicon substrate; but for epsilon-Ga 2 O 3 Such silica on silicon substrate is not suitable for epsilon-Ga 2 O 3 The growth of the film may damage the epsilon-Ga 2 O 3 Growth of thin films (ZL 201910335562.4). epsilon-Ga with high crystallization quality and high crystal orientation consistency 2 O 3 The film is difficult to prepare and difficult to grow on dielectric material layers such as silicon dioxide, but can only grow on substrates of few specific types (such as AlN, sapphire, silicon carbide and the like) and specific crystal directions, so that the difficulty of constructing the high-performance surface acoustic wave piezoelectric resonator is greatly increased.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a method based on epsilon-Ga 2 O 3 SAW piezoelectric resonance of materialsVibrator structure that utilizes lateral growth method to solve high quality epsilon-Ga over dielectric layer 2 O 3 The problem of film growth realizes a high-performance gallium oxide piezoelectric resonator based on a silicon substrate.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the first aspect of the present invention provides a piezoelectric resonator, which includes: the silicon substrate, the AlN inserting layer, the energy binding layer, the epsilon-phase gallium oxide layer and the interdigital electrode;
the energy binding layer is distributed with openings, and the openings penetrate through the energy binding layer downwards until the AlN inserting layer is exposed;
the epsilon-phase gallium oxide layer grows from the exposed AlN inserting layer, upwards grows through the opening holes, and then transversely grows to cover the whole energy binding layer;
the rate at which the acoustic wave propagates in the energy-binding layer is lower than the rate at which the acoustic wave propagates in the silicon substrate and the AlN insertion layer.
The opening in the invention can penetrate the energy binding layer and then expose the upper surface of the AlN inserting layer; the energy confinement layer may be penetrated and the opening may be further penetrated into the AlN insertion layer, but not penetrated into the AlN insertion layer.
Preferably, the silicon substrate is silicon (111), or a silicon substrate material having an inclination angle of 4 DEG or less with respect to silicon (111).
Preferably, the material of the energy binding layer is at least one of silicon dioxide, silicon nitride and silicon oxynitride.
Preferably, the AlN intercalation layer has a thickness of 1-100nm; the thickness of the energy binding layer is 10-1000nm; the thickness of the epsilon-phase gallium oxide layer is 100-6000nm.
Preferably, the shape of the opening includes at least one of triangle, rectangle, hexagon and circle; the present invention is not limited to the specific shape of the openings, and a conventional regular pattern may be used.
Preferably, the average lateral area of the aperture is 10% or less of the lateral area of the piezoelectric resonator.
Preferably, the sum of the total areas of the openings is 15% or less of the lateral area of the piezoelectric resonator.
The second aspect of the invention provides a surface acoustic wave resonator, the structure of which comprises the piezoelectric resonator.
The third aspect of the present invention provides a method for growing a piezoelectric resonator, comprising the steps of:
(1) Growing an AlN inserting layer on a silicon substrate;
(2) Depositing an energy confinement layer on the AlN insertion layer; opening holes on the surface of the energy binding layer, wherein the openings penetrate through the energy binding layer downwards until the AlN inserting layer is exposed; growing an epsilon-phase gallium oxide layer from the bottom of the opening, growing upwards through the opening, and then transversely growing to cover the whole energy binding layer;
(3) And depositing interdigital electrodes on the epsilon-phase gallium oxide layer.
Preferably, the specific steps of the opening in the step (2) of the preparation method are as follows: and forming a periodic or non-periodic distribution pattern on the energy constraint layer through gluing, photoetching and developing, exposing the energy constraint layer at the bottom of the pattern after developing, and forming openings along the pattern formed after photoetching through dry etching.
Preferably, in the preparation method, the AlN inserting layer can be deposited by MOCVD, or the AlN inserting layer can be deposited by magnetron sputtering, when the AlN inserting layer is deposited by MOCVD, the growth temperature is 950-1100 ℃, and the growth pressure is 18-22Torr; when the AlN insert layer is deposited by magnetron sputtering, the temperature is 500-700 ℃.
Preferably, in the preparation method, the energy constraint layer can be deposited by adopting magnetron sputtering, the air pressure is set to be 0.005-0.015 millitorr, the sputtering temperature is room temperature, the sputtering power is 80-100W, and the energy constraint layer is deposited.
Preferably, in the preparation method, the epsilon-phase gallium oxide layer can be deposited by adopting CVD, and the epsilon-phase gallium oxide layer can also be deposited by adopting MOCVD; when the epsilon-phase gallium oxide layer is deposited by CVD, the growth temperature is 500-650 ℃; when the epsilon phase gallium oxide layer is deposited by MOCVD, the growth temperature is 500-600 ℃.
Preferably, in the preparation method, the interdigital electrode is deposited by adopting an electron beam evaporation method.
Preferably, the step (2) may be replaced by: forming a photoresist column on the surface of the AlN inserting layer through gluing, photoetching and developing, then depositing an energy binding layer, and removing the photoresist column to form an opening; growing an epsilon-phase gallium oxide layer from the bottom of the opening, growing upwards through the opening, and then transversely growing to cover the whole energy binding layer; further preferably, the height of the photoresist column > energy binding layer thickness.
Compared with the prior art, the invention has the beneficial effects that:
the invention solves the problem of epsilon-Ga by adopting a method of transversely growing a film 2 O 3 The problem that the film growth is limited by the substrate, and finally, the high-performance epsilon-Ga based on the silicon substrate is constructed 2 O 3 A surface acoustic wave resonator structure.
Drawings
Fig. 1 is a structure of a piezoelectric resonator of embodiment 1;
fig. 2 is a schematic diagram of a process flow for manufacturing a piezoelectric resonator according to embodiment 1;
FIG. 3 shows ε -Ga prepared in example 1 2 O 3 Scanning electron microscope surface morphology of the film;
FIG. 4 is a radio frequency admittance curve of the device of example 1;
fig. 5 is an amplitude distribution at a resonance frequency of the device of example 1;
fig. 6 is a structure of a piezoelectric resonator of embodiment 2;
fig. 7 is a schematic view of a flow chart of the preparation of the piezoelectric resonator of embodiment 2;
fig. 8 is a structure of a piezoelectric resonator of comparative example 1;
FIG. 9 is an optical microscope topography of the gallium oxide film of comparative example 1;
fig. 10 is a structure of a piezoelectric resonator of comparative example 2;
FIG. 11 is a radio frequency admittance curve of the device of comparative example 2;
FIG. 12 is an amplitude distribution at a resonant frequency of the device of comparative example 2;
reference numerals: in FIGS. 1, 2, 5, 11-silicon substrate, 12-AlN insert layer, 13-energy confinement layer, 14- ε phase gallium oxide layer, 15-interdigital electrode; in FIGS. 6-7, a 21-silicon substrate, a 22-AlN insert layer, a 23-energy-confining layer, a 24- ε phase gallium oxide layer, 25-interdigital electrode; in FIG. 8, 31-silicon substrate, 32-AlN insert layer, 33-energy-confining layer, 34- ε phase gallium oxide layer, 35-interdigital electrode; in FIGS. 10 and 12, a 41-silicon substrate, a 42-AlN insert layer, a 43- ε phase gallium oxide layer, and 44-interdigital electrode.
Detailed Description
The following describes the invention in more detail. The description of these embodiments is provided to assist understanding of the present invention, but is not intended to limit the present invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
The experimental methods in the following examples, unless otherwise specified, are conventional, and the experimental materials used in the following examples, unless otherwise specified, are commercially available.
Example 1
The structure of the piezoelectric resonator provided in this embodiment is shown in fig. 1, and the preparation flow of the piezoelectric resonator is shown in fig. 2, and specifically includes the following steps:
step 1: and cleaning the silicon substrate with the (111) crystal orientation, and growing an AlN layer (12) on the substrate (11) by adopting Metal Organic Chemical Vapor Deposition (MOCVD) after cleaning, wherein the AlN layer is 20 nanometers thick.
Step 2: magnetron sputtering is adopted on the AlN layer (12), the air pressure is set to be 0.01 millitorr, the sputtering temperature is room temperature, the sputtering power is 90W, argon and oxygen mixed gas is introduced in the ratio of 4:1 to serve as carrier gas, and 500 nanometer silicon dioxide medium is deposited to serve as an energy constraint layer (13).
Step 3: and forming an aperiodic distribution pattern with the size of 2-10 micrometers on the energy constraint layer (13) through gluing, photoetching and developing, wherein the energy constraint layer (13) is exposed at the bottom of the pattern after developing.
Step 4: and etching to the AlN layer (12) along the pattern formed after the photoetching by dry etching.
Step 5: the remaining photoresist was cleaned.
Step 6: placing the sample into a Chemical Vapor Deposition (CVD) reaction chamber, and performing epsilon-Ga by adopting a transverse growth method 2 O 3 The film (14) was grown at 560 ℃. Using epsilon-Ga 2 O 3 The film growth is selective to the substrate, and the film is firstly grown from the AlN surface exposed by the opening and is grown along the vertical direction; when epsilon-Ga 2 O 3 After growing to be higher than the open pore, due to epsilon-Ga 2 O 3 The part of the film above the openings starts to grow transversely and gradually heals, and finally covers the whole silicon dioxide layer (13); after the film heals, the lateral growth is completed, after which the film continues to grow in the vertical direction until epsilon-Ga over the silicon dioxide layer (13) 2 O 3 The film thickness reached 0.8 microns.
Step 7: taking out the sample, and then re-adopting electron beam evaporation method to obtain the product 2 O 3 Periodic interdigital electrodes (15) are deposited on the piezoelectric film (14). The deposition conditions are room temperature, air pressure of 0.05 millitorr, metal aluminum target, electrode finger width d=0.6 micrometers, corresponding resonant acoustic wave wavelength λ=4d=2.4 micrometers, electrode finger length w=50 micrometers, electrode pair number of 60 pairs, thickness of 0.2 micrometers.
The flow of the steps is shown in fig. 2. Through the transverse epitaxy of the step 6, the high flatness epsilon-Ga is smoothly realized 2 O 3 Film growth, epsilon-Ga prepared in example 2 O 3 The film morphology is shown in figure 3. The SAW device of the surface acoustic wave prepared in the step 7 has a radio frequency admittance curve which is shown in fig. 4, and the admittance peak value at the resonance frequency is about 60mS. The amplitude distribution at the resonance frequency, as shown in fig. 5, the resonance energy is mainly distributed in the epsilon-phase gallium oxide layer.
Example 2
The structure of the piezoelectric resonator provided in this embodiment is shown in fig. 6, and the preparation process is shown in fig. 7, and specifically includes the following steps:
step 1: cleaning a silicon (111) substrate (21), and then growing an AlN layer (22) on the substrate by adopting magnetron sputtering, wherein the growth temperature is 600 ℃, and the thickness of the AlN layer is 50 nanometers.
Step 2: and photoresist cylinders with the diameter of 6 microns are left on the surface of the AlN layer by adopting gluing, photoetching and developing methods, and the photoresist is in regular hexagonal layout and has the period of 300 microns.
Step 3: and (3) depositing 1 micrometer silicon oxynitride serving as an energy binding layer (23) on the AlN layer (22) by adopting a magnetron sputtering method and taking silicon oxynitride as a target material under the conditions of room temperature, air pressure of 0.01 millitorr and nitrogen carrier gas.
Step 4: photoresist is stripped, and the AlN layer (22) is exposed at the bottom of the opening pattern after photoresist stripping.
Step 5: placing the sample into an MOCVD reaction cavity, and adopting a transverse growth method to carry out epsilon-Ga 2 O 3 The film (24) was grown at 530 ℃. Using epsilon-Ga 2 O 3 The film growth is selective to the substrate, and the film is firstly grown from the AlN surface exposed by the opening and is grown along the vertical direction; when epsilon-Ga 2 O 3 After growing to be higher than the open pore, due to epsilon-Ga 2 O 3 The part of the film above the openings starts to grow transversely and gradually heals, and finally covers the whole energy binding layer (23); after the film heals, the lateral growth is completed, after which the film continues to grow in the vertical direction until epsilon-Ga over the energy-binding layer (23) 2 O 3 The film thickness reached 2 microns.
Step 6: taking out the sample, and then re-adopting electron beam evaporation method to obtain the product 2 O 3 Periodic interdigital electrodes (25) are deposited on the piezoelectric film (24). The deposition conditions are 150 ℃ and the air pressure is 0.05 millitorr, the metal titanium target material, the electrode finger width d=0.6 microns, the corresponding resonant acoustic wave wavelength lambda=4d=2.4 microns, the electrode finger length W=50 microns, and the thickness is 0.3 microns.
Comparative example 1
The structure of the piezoelectric resonator provided in this comparative example is shown in fig. 8, and the preparation method specifically includes the following steps:
step 1: and cleaning the silicon substrate with the (111) crystal orientation, and growing an AlN layer (32) on the substrate (31) by adopting Metal Organic Chemical Vapor Deposition (MOCVD) after cleaning, wherein the AlN layer is 20 nanometers thick.
Step 2: magnetron sputtering is adopted on the AlN layer (32), the air pressure is set to be 0.01 millitorr, the sputtering temperature is room temperature, the sputtering power is 90W, argon and oxygen mixed gas is introduced in the ratio of 4:1 to serve as carrier gas, and 500 nanometer silicon dioxide medium is deposited to serve as an energy constraint layer (33).
Step 3: placing the sample into a Chemical Vapor Deposition (CVD) reaction chamber for epsilon-Ga 2 O 3 Growing the film (34) at 560 DEG C 2 O 3 The thickness of the film reached 0.8 μm.
Comparative example 1 differs from example 1 in that no lateral growth was employed, the gallium oxide layer was grown directly on the silicon dioxide layer, and the remainder was the same. The surface topography of the sample of comparative example 1 is shown in fig. 9. Comparing comparative example 1 with example 1, it was found that the sample had a rough surface morphology and disordered orientation and poor growth quality due to the gallium oxide layer grown directly on the silicon dioxide layer.
Comparative example 2
The structure of the piezoelectric resonator provided in this comparative example is shown in fig. 10, and the preparation method specifically includes the following steps:
step 1: and cleaning the silicon substrate with the (111) crystal orientation, and growing an AlN layer (42) on the substrate (41) by adopting Metal Organic Chemical Vapor Deposition (MOCVD) after cleaning, wherein the AlN layer is 20 nanometers thick.
Step 2: placing the sample into a Chemical Vapor Deposition (CVD) reaction chamber for epsilon-Ga 2 O 3 Growth of film (43) at 560 ℃ and epsilon-Ga 2 O 3 The thickness of the film reached 0.8 μm.
Step 3: taking out the sample, and then re-adopting electron beam evaporation method to obtain the product 2 O 3 Periodic interdigital electrodes (44) are deposited on the piezoelectric film (43). The deposition conditions are room temperature, air pressure of 0.05 millitorr, metal aluminum target, electrode finger width d=0.6 micrometers, corresponding resonant acoustic wave wavelength λ=4d=2.4 micrometers, electrode finger length w=50 micrometers, electrode pair number of 60 pairs, thickness of 0.2 micrometers.
Comparative example 2 is different from example 1 in that there is no silicon oxide layer as an energy confinement layer, so that the gallium oxide layer can be directly grown on the AlN layer without using a lateral growth method. The SAW device of the second comparative example was simulated to calculate the radio frequency admittance curve as shown in fig. 11, and the admittance peak at the resonance frequency was about 30mS, which is lower than that of fig. 4, and the performance was deteriorated. The amplitude distribution at the resonance frequency is shown in fig. 12, and in addition to the distribution in the epsilon-phase gallium oxide layer, a part of the energy leaks into the silicon substrate, resulting in a weakening of the overall amplitude in the gallium oxide layer compared to fig. 5.
The embodiments of the present invention have been described in detail above, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, and yet fall within the scope of the invention.

Claims (10)

1. A piezoelectric resonator, characterized in that the piezoelectric resonator comprises: the silicon substrate, the AlN inserting layer, the energy binding layer, the epsilon-phase gallium oxide layer and the interdigital electrode;
the energy binding layer is distributed with openings, and the openings penetrate through the energy binding layer downwards until the AlN inserting layer is exposed;
the epsilon-phase gallium oxide layer grows from the exposed AlN inserting layer, upwards grows through the opening holes, and then transversely grows to cover the whole energy binding layer;
the rate at which the acoustic wave propagates in the energy-binding layer is lower than the rate at which the acoustic wave propagates in the silicon substrate and the AlN insertion layer.
2. The piezoelectric resonator according to claim 1, characterized in that the silicon substrate is silicon (111) or a silicon substrate material having an inclination angle of 4 ° or less with silicon (111).
3. The piezoelectric resonator according to claim 1, wherein the material of the energy confinement layer is at least one of silicon dioxide, silicon nitride, and silicon oxynitride;
4. the piezoelectric resonator according to claim 1, characterized in that the AlN insertion layer has a thickness of 1-100nm; the thickness of the energy binding layer is 10-1000nm; the thickness of the epsilon-phase gallium oxide layer is 100-6000nm.
5. The piezoelectric resonator according to claim 1, wherein the shape of the aperture comprises at least one of triangular, rectangular, hexagonal, and circular.
6. The piezoelectric resonator according to claim 5, wherein the average lateral area of the openings is less than or equal to 10% of the lateral area of the piezoelectric resonator.
7. The piezoelectric resonator according to claim 6, wherein the sum of the total areas of the openings is 15% or less of the lateral area of the piezoelectric resonator.
8. A surface acoustic wave resonator, characterized in that the structure of the surface acoustic wave resonator comprises the piezoelectric resonator of any one of claims 1 to 7.
9. A method of growing a piezoelectric resonator according to any one of claims 1 to 7, comprising the steps of:
(1) Growing an AlN inserting layer on a silicon substrate;
(2) Depositing an energy confinement layer on the AlN insertion layer; opening holes on the surface of the energy binding layer, wherein the openings penetrate through the energy binding layer downwards until the AlN inserting layer is exposed; growing an epsilon-phase gallium oxide layer from the bottom of the opening, growing upwards through the opening, and then transversely growing to cover the whole energy binding layer;
(3) And depositing interdigital electrodes on the epsilon-phase gallium oxide layer.
10. The method of claim 9, wherein the step (2) is replaced by: forming a photoresist column on the surface of the AlN inserting layer through gluing, photoetching and developing, then depositing an energy binding layer, and removing the photoresist column to form an opening; and growing an epsilon-phase gallium oxide layer from the bottom of the opening, growing upwards through the opening, and then laterally growing to cover the whole energy binding layer.
CN202311241922.7A 2023-09-25 2023-09-25 Piezoelectric resonator structure and growth method thereof Pending CN117318645A (en)

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CN117318645A true CN117318645A (en) 2023-12-29

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