CN117317543B

CN117317543B - Small terahertz MEMS single-pole four-throw switch based on shared composite beam

Info

Publication number: CN117317543B
Application number: CN202311318840.8A
Authority: CN
Inventors: 杨光耀; 张乃柏; 宋瑞良; 刘宁; 邓琨
Original assignee: CETC 54 Research Institute
Current assignee: CETC 54 Research Institute
Priority date: 2023-10-12
Filing date: 2023-10-12
Publication date: 2026-05-12
Anticipated expiration: 2043-10-12
Also published as: CN117317543A

Abstract

This invention discloses a miniature terahertz MEMS single-pole four-throw switch based on a shared composite beam, belonging to the field of radio frequency MEMS technology. The single-pole four-throw switch based on the integral beam consists of a microstrip main feed line, a bifurcated transition structure, a low-loss switching structure, and a microstrip output line. The MEMS switch forms a highly isolated symmetrical structure with a metal-dielectric integral composite beam. The combination of a crane arm and a shared folding arm enables the switch to achieve a miniaturized size and low pull-down voltage. Electrostatic attraction generated by the potential difference between the bottom electrode and the metal part of the shared beam pulls down the corresponding part of the beam, and the metal contacts on the beam conduct the corresponding microstrip output line. When one MEMS switch line is conducting while the other lines are disconnected, signal transmission is completed. This reconfigurable switch consists of four asymmetric single-pole single-throw switch units arranged symmetrically and compactly, exhibiting high isolation over an ultra-wide bandwidth. In the DC-350GHz band, the path reflection coefficient is less than -15dB, the in-band insertion loss is less than 1.8dB, and the isolation is greater than 15dB.

Description

Small terahertz MEMS single-pole four-throw switch based on shared composite beam

Technical Field

The invention relates to a miniaturized terahertz MEMS single-pole four-throw switch based on a shared composite beam, which is mainly applied to a radio frequency system of a terahertz frequency band and belongs to the technical field of radio frequency MEMS.

Background

The radio frequency switch based on the MEMS micro-electromechanical structure has wide and important application requirements in satellite communication front ends, broadband network systems and radar systems covering microwave frequency bands due to the advantages of wide working bandwidth, high isolation, small insertion loss and the like. Worldwide, many researches on low-frequency microwave band MEMS switches are mainly divided into cantilever beam switches and clamped beam switches, high-power switches and low-power switches, single-pole single-throw switches and single-pole multi-throw switches and the like. The single-pole multi-throw switch can complete switching of radio frequency signal paths under the condition that the number of the switch beams is minimum, provides new dimensions for simplifying control circuit design, and achieves miniaturization of the switching paths, but the MEMS single-pole multi-throw switch has the defects of low high-frequency cut-off frequency, difficult miniaturization and large influence on mechanical structure stability. The research results of the terahertz frequency band MEMS switch are few, the single-pole multi-throw MEMS switch of the terahertz frequency band is not yet researched and published, the overall design difficulty of the radio frequency performance and the mechanical structure is high, the existing high-frequency MEMS switch often needs a large beam size to have ideal radio frequency performance, the structure is often simple, and the high-frequency trafficability is not ideal. Cantilever-based direct contact single pole, four throw MEMS switches, such as those developed by n.scott Barker et al 2011, university of virginia, usa, can be covered to 75GHz and switching line-based high frequency phase shifters have been developed based on this switch, but the return loss of the switch is only 13dB at 75 GHz. Then Selin Tolunay Wipf in IEEE Microwave AND WIRELESS Components Letters published a paper for a D-band single pole double throw MEMS switch made using SiGe BiCMOS technology that can achieve an insertion loss of 1.42dB and an isolation of 54.5dB at 140GHz, but the isolation will deteriorate to 18.25dB at 170GHz, with an increase in insertion loss. In 2022, the N.Scott Barker et al designs a terahertz cantilever beam switch based on a coplanar waveguide by utilizing silicon and fused quartz, but a MEMS single-pole multi-throw switch working at high frequency terahertz is not really realized.

The current terahertz MEMS switch has the defects of larger structural size, poor high-frequency isolation and large loss, and the current terahertz MEMS switch is difficult to meet the requirements of application on radio frequency devices such as antennas. However, MEMS switches in the terahertz frequency band have not been studied at present in connection with single-pole, multi-throw miniaturization.

Disclosure of Invention

In order to solve the problems in the background technology, the design of the invention is a small terahertz MEMS single-pole four-throw switch based on a shared composite beam, and can meet the requirement of terahertz frequency band radio frequency path switching. The designed switch has the characteristics of miniaturization, high cut-off frequency, low insertion loss, high isolation and the like.

In order to solve the technical problems, the invention is realized by the following technical scheme:

The miniaturized terahertz MEMS single-pole four-throw switch based on the shared composite clamped beam comprises a microstrip primary feeder 1, a trapezoid protruding bifurcation structure 2, a voltage bias line group, a special-shaped MEMS switch and microstrip secondary feeders 20, 21, 22 and 23;

The trapezoid protruding bifurcation structure 2 mainly comprises a T-shaped junction power divider and two trapezium pieces, wherein the two trapezium pieces are in one-to-one correspondence with the two tail ends of the T-shaped junction power divider;

The tail end of the T-shaped junction power divider and the upper bottom edge of the trapezoid piece are connected with the microstrip secondary feeder one by one through special-shaped MEMS switches, and the special-shaped MEMS switches are in one-to-one correspondence with the microstrip secondary feeder;

The four special-shaped MEMS switches share the same elastic dielectric film bridge 7, and a metal bridge-shaped passage and a pull-down metal beam on each special-shaped MEMS switch are positioned on the lower surface of the elastic dielectric film bridge, and are supported and suspended by corresponding metal bridge piers, and pull-down electrodes are arranged below the pull-down metal beams;

The metal bridge-shaped path and the pull-down metal beam on the same special-shaped MEMS switch are adjacent and contact-free.

Further, an initial section of the microstrip secondary feeder connected through the trapezoid is parallel to the microstrip primary feeder, and the microstrip secondary feeder connected with the tail end of the T-shaped junction power divider is perpendicular to the microstrip primary feeder;

wherein, two microstrip second grade feeder that are connected through trapezoidal piece are all buckled 135, and deviate from the setting.

Further, the bridge portion of the elastic dielectric film above the metal bridge-like via is perpendicular to the long side of the metal bridge-like via.

Further, the two special-shaped MEMS switches corresponding to the trapezoid piece share a pull-down metal bridge, and the shared pull-down metal bridge is of a Chinese character 'ri' -shaped structure;

the pull-down metal bridges of the two special-shaped MEMS switches corresponding to the T-shaped junction power divider are of a square-shaped structure.

Furthermore, the high-frequency low-loss dielectric material is adopted as a substrate, the corrosion-resistant low-resistivity metal material is adopted as a metal beam, the compound dielectric material with low elastic coefficient is adopted as a dielectric film bridge, and the metal beam is prepared by a sacrificial layer technology, so that the dielectric film bridge is tightly adhered to the metal beam, and the dielectric film bridge can be driven by the downward pulling force of the metal beam.

Further, the microstrip primary feeder line, the microstrip secondary feeder line and the voltage bias line group jointly form a meter-shaped configuration.

Compared with the prior art, the invention has the advantages that:

a) The invention can realize the four-way radio frequency signal switching of the terahertz frequency band, and avoids the problems of extra loss and mismatch caused by cascading of single-pole single-throw and double-throw switches;

b) The switch structure of the invention has small size, is far smaller than the traditional MEMS switch, and can be easily integrated into a radio frequency system at high density;

c) The terahertz broadband switching device is stable in performance on a terahertz broadband, small in insertion loss, high in switching isolation, wide in applicability and low in processing difficulty.

Drawings

FIG. 1 is a plan view of a switch portion of an embodiment of the present invention;

FIG. 2 is an oblique view of a pull-down configuration of an embodiment of the present invention;

FIG. 3 is a process side view of an embodiment of the present invention;

FIG. 4 is a schematic diagram of the overall structure of a switch board according to an embodiment of the invention;

FIG. 5 is a 1-state S parameter graph of an embodiment of the present invention;

FIG. 6 is a 2-state S parameter graph of an embodiment of the present invention;

Detailed Description

The following describes in further detail the embodiments of the present invention with reference to figures 1-6 and examples.

The embodiment mainly comprises a microstrip primary feeder 1, a trapezoid protruding bifurcation structure 2, metal bridge-shaped passages 3,4, 5 and 6, a common dielectric beam (elastic dielectric film bridge) 7, a common metal beam 8, independent pull-down metal beams 9 and 10, metal bridge piers 11, 12, 13, 14 and 15, pull-down electrodes 16, 17, 18 and 19, microstrip secondary feeders 20, 21, 22 and 23 and voltage bias line groups 24, 25, 26 and 27. The voltage bias line groups 24, 25, 26 and 27 are respectively applied with voltages to enable potential differences to exist between the corresponding pull-down electrodes and the metal beams, so that pull-down electrostatic force is generated, the on-off of four MEMS switch lines (connection to two ends of a metal bridge-shaped passage) are separately controlled, the four asymmetric MEMS switch structures are basically the same, the positions of the four asymmetric MEMS switch structures are axisymmetric relative to the microstrip primary feeder 1, one end of each switch is connected with the primary feeder, and the other end of each switch is connected with the secondary feeder. The trapezoid protruding bifurcation structure 2 is composed of a T-shaped junction power divider and two trapezoids, four asymmetric MEMS switches are separated in different directions, the loss of radio frequency performance is reduced while the placing space of the switch structure is ensured, the microstrip secondary feeder lines 21 and 22 are firstly parallel to the microstrip primary feeder line 1 and then deflect for 45 degrees to be separated, and the microstrip secondary feeder lines 20 and 23 are perpendicular to the microstrip primary feeder line 1.

MEMS single pole, multi-throw switches have unique electromechanical structures, including a common dielectric beam 7 and a common metal beam 8. The common medium beam covers four special-shaped MEMS switch structures, the metal beams are structurally supported at two ends of the structure respectively, the special-shaped MEMS structures are characterized in that one end of each fixed supporting beam is a composite crane-shaped arm, the other end of each fixed supporting beam is a medium material inclined folding arm, the two arms can be designed into a common structure, the miniaturization of the whole structure of the switch is realized, meanwhile, the switches are not affected by each other, under the condition that the metal beams are shared, the two crane-shaped arms form a Chinese character 'ri', a voltage bias line group can share a grounding line, and a micro-strip primary feeder line, a micro-strip secondary feeder line and the voltage bias line group of the switch jointly form a Chinese character 'mi'.

Four special-shaped MEMS switches in the single-pole four-throw switch have the same structure and are symmetrically arranged along the axis of the first-stage feeder line. Taking one of the switches as an example, each comprises a metal bridge pier 13, an elastic metal film bridge 8, an elastic dielectric film bridge 7, a pull-down electrode 18, a metal bridge-like path 5 and a voltage bias line 26. The elastic metal film bridge 8 is overlapped with the pull-down electrode 18 in a large area in the vertical substrate direction. The elastic dielectric film bridge 7 is of an asymmetric structure and is mainly supported by a medium, the elastic metal film bridge 8 and the metal bridge-shaped passage 5 are both positioned at the lower layer of the elastic dielectric film bridge 7 and are tightly combined with the elastic dielectric film bridge 7, and the elastic metal film bridge 8 and the metal bridge-shaped passage 5 are not contacted with each other. The angled hinge arm, which is formed of dielectric material, has a 45 degree corner near the end of one end of the metal bridge passageway such that the end is perpendicular to the long side of the bridge passageway.

The following is a more specific description:

Taking the switch part structure shown in fig. 1 as an example, the key single-pole four-throw structure consists of a microstrip primary feeder 1, a trapezoid protruding bifurcation structure 2, metal bridge-shaped passages 3, 4, 5 and 6, a common dielectric beam (elastic dielectric film bridge) 7, a common metal beam 8, independent pull-down metal beams 9 and 10, metal bridge piers 11, 12, 13, 14 and 15, pull-down electrodes 16, 17, 18 and 19, microstrip secondary feeders 20, 21, 22 and 23 and voltage bias line groups 24, 25, 26 and 27.

The four special-shaped MEMS switches are arranged in an axisymmetric mode along a first-stage feeder line, a common dielectric beam 7 covers all four special-shaped MEMS switch structures and is designed integrally, the dielectric beam and the metal beam are supported through metal piers, each special-shaped MEMS switch is composed of a crane-shaped arm and an inclined folding arm, one end of the crane-shaped arm is a dielectric-metal hybrid beam, one end of the folding arm is a single dielectric beam, the stress difference of the arm shape compensates for abnormal structural deformation possibly caused by a pull-down electrode on one side, a metal bridge-shaped passage is an independent metal structure on the dielectric beam 7, a metal contact is arranged on the lower surface of the metal bridge-shaped passage and is responsible for signal transmission, the inclined folding arm formed by dielectric materials is provided with a 45-degree corner near the end of one end of the metal bridge-shaped passage, so that the end is perpendicular to the long side of the bridge-shaped passage, and the inclined folding arm and the piers thereof are shared by the two special-shaped MEMS structures. In addition, two special-shaped MEMS switches positioned on the symmetry axis also share a medium-metal crane-shaped arm, and a metal bridge pier 13 provides support to form a stable structure in a shape of Chinese character 'ri', so that the miniaturization of the switch structure is realized conveniently.

The pull-down structure of the MEMS switch is shown in fig. 2, and takes one of the switch structures as an example, it is driven by a dc voltage, and there is a high resistance wire at each of the positions of the metal bridge pier 13 and the pull-down electrode 17 for applying a potential difference. When a voltage is applied to the voltage bias line group 25, a section of the elastic dielectric film bridge 7 made of silicon oxide or other dielectric materials is pulled down by metal electrostatic force, the contact point on the metal bridge-shaped path 4 is connected with the microstrip secondary feeder 21 and the trapezoid protruding bifurcation structure 2, the switch part is turned on, and when the voltage is set to zero, the metal electrostatic force is released, the dielectric film bridge 7 is restored by elastic force, and the switch is turned off. When one of the four MEMS switch structures is conducted and the other MEMS switch structures are disconnected, the state is a working state, so that the single-pole four-throw switch is in four working states, and the four working states respectively correspond to four paths of terahertz signal conduction.

Fig. 3 illustrates a cross-sectional structure of a portion of the MEMS single pole multiple throw switch, which uses a high frequency low loss dielectric material as a substrate, such as BT substrate, high resistance silicon, quartz, etc., a corrosion resistant low resistivity metal material as a metal beam, such as copper, gold, etc., and a compound dielectric material with a low coefficient of elasticity as a dielectric beam, such as silicon dioxide, etc., in terms of constituent materials. The metal beam is manufactured by a sacrificial layer technology, and the dielectric beam is tightly adhered to the metal beam, so that the dielectric structure can be driven by the downward pulling force of the metal structure. In order to avoid short circuit between the metal beam and the pull-down electrode after being pulled down, the pull-down electrode is covered with a compound isolation layer. The lamination scheme proposed by this embodiment can achieve a stable MEMS switch structure with low pull down force.

MEMS single pole multiple throw switch boards for performance testing as shown in figure 4,

When voltage is applied to two ends of the bias voltage pads 28 and 29, the corresponding MEMS switch structure is conducted and the other three are disconnected, terahertz current flows in from the microstrip first-stage feeder 1 and flows out from the microstrip second-stage feeder 20, and as no voltage difference exists on the other bias voltage pads 30-34 at the moment, the other micro-electromechanical switch structures are disconnected, and only very weak current flows out from the three microstrip second-stage feeders 21, 22 and 23 at the moment. The figure can intuitively show that the four voltage bias line groups and the five microstrip feeder lines form a'm' -shaped configuration together, and the figure is axisymmetric relative to the extension direction of the microstrip primary feeder line. Each first-level feeder line and each second-level feeder line are connected with GSG probe pad 35-39 of a specific frequency band, and the microstrip lines are converted into grounded coplanar waveguide transmission lines through the grounding via holes for testing the switch radio frequency performance.

The switch structure and the distribution of the secondary feeder will both have an impact on the switch performance, wherein:

the internal structural dimension can have important influence on the performance of the reconfigurable single-pole four-throw switch, and the internal structural dimension is specifically expressed as follows:

a) The metal path widths 43, 44 affect the impedance matching degree of the switch, so that too large or too small a width 43 can cause too small a conduction bandwidth of the switch or even impedance mismatch;

b) The metal path length 44 affects the open isolation of the switch, and the slot length and radiating structure dimensions together determine the operating frequency band of the antenna;

c) The dielectric beam folding arm length 46 is used for adjusting the pull-down voltage and the switch response time of the pull-down state;

In the construction of the switchboard, the secondary feeder configuration shown in fig. 4 has an important effect on the performance of each switching state, and is specifically expressed as follows:

d) The angle of inclination of the secondary feed lines 20-23 affects the level of matching and loss when the switch switches to that path;

e) The spacing between the secondary feed lines 21 and 22 and the final trend of the secondary feed lines can significantly affect the antenna port matching and the operating bandwidth;

f) The length 40 and width 41 of the trapezoid protruding bifurcation structure directly affect the radio frequency performance of the high-frequency single-pole multi-throw switch, and the performance consistency of each switching state of the switch is poor or the whole performance is poor due to the fact that the values of the trapezoid protruding bifurcation structure are too large and too small.

The exemplary single pole, four throw switch illustrated in fig. 2 and 4 is comprised of a switch structure, bias voltage pads 28-34 and GSG probe pads 35-39, the size of which limits the run and distribution of the secondary microstrip feed line, and the matching bandwidth ultimately limits the operating band of the switch under test. The reasonably designed probe pad has an influence on the switch test performance, but does not influence the practical application performance. In practical system application, the length of the secondary microstrip feeder line is reduced, so that the radio frequency performance of the secondary microstrip feeder line is further improved.

Therefore, the reasonable fan-out form and the secondary microstrip feeder line are selected to have important significance for improving the performance of the terahertz single-pole multi-throw switch, and the final structural parameter of the switch is the result of comprehensive optimization.

The small terahertz MEMS single-pole four-throw switch based on the shared composite beam is selected for example and description herein, and the following data units are in micrometers:

when the dimensions of the structure of fig. 1 are:

structure 40=30, structure 41=30, structure 42=45;

When the dimensions of the structure of fig. 2 are:

Structure 43=7, structure 44=25, structure 45=41, structure 46=28;

When the dimensions of the structure of fig. 3 are:

structure 47=1710, structure 48=2100;

the total thickness of the high-frequency low-loss dielectric substrate is 50, the height difference between the switch metal bridge-shaped passage 4 and the substrate is 1.8, and the thicknesses of the metal layers of the microstrip line and the metal ground are 1.

The reflection coefficient simulation diagram of the terahertz MEMS single-pole four-throw switch based on the shared composite beam is as follows:

Shown in fig. 5 is a port S parameter curve of the terahertz MEMS single-pole four-throw switch based on the common composite beam when the switch path 4 is turned on, and the switch path 4 corresponds to the GSG probe pad 37. The results show the transmission loss, port reflection and isolation of the switch in the frequency range of 200-350 GHz. At frequencies above 205GHz, S (35, 35) is smaller than-15 dB, namely the return loss at the input end pad 35 is larger than 15dB, S (37,35) is larger than-2 dB at frequencies below 340GHz, namely the transmission loss at the input end is smaller than 2dB, and the isolation of the input end and the output end at the non-conducting ports of the other three curves is larger than 15 dB.

Shown in fig. 6 is a port S parameter curve of the terahertz MEMS single-pole four-throw switch based on the common composite beam when the switch path 3 is turned on, and the switch path 3 corresponds to the GSG probe pad 36. At frequencies below 300GHz, S (35, 35) is smaller than-15 dB, namely the return loss at the input end pad 35 is larger than 15dB, S (36, 35) is larger than-2.4 dB at frequencies below 300GHz, namely the transmission loss at the input end is smaller than 2.4dB, and the isolation of the input end and the output end at the non-conducting ports of the other three curves is larger than 15 dB.

Therefore, the radio frequency channel switching of the 205-300GHz terahertz frequency band can be realized through the miniaturized terahertz MEMS single-pole four-throw switch. The result is affected by the bandwidth of the GSG probe pad, the return loss of the actual switch structure in the DC-350GHz frequency band is more than 15dB, the in-band loss is less than 1.8dB, and the isolation is more than 15dB.

The foregoing is only an example, and if a MEMS single pole four throw switch in different operating frequency bands is desired, different parameters may be adjusted according to the specific implementation, for example, the length and width of the metal path, the inclination angle of the secondary feeder line, and the distance between the secondary feeder lines may be adjusted to adjust the operating frequency, adjust the transmission loss, adjust the impedance matching, and the like.

Claims

1. The miniature terahertz MEMS single-pole four-throw switch based on the shared composite beam is characterized by comprising a microstrip primary feeder (1), a trapezoid protruding bifurcation structure (2), a voltage bias line group, a special-shaped MEMS switch and microstrip secondary feeders (20, 21, 22 and 23);

the trapezoid protruding bifurcation structure (2) consists of a T-shaped junction power divider and two trapezium pieces, wherein the two trapezium pieces are in one-to-one correspondence with the two tail ends of the T-shaped junction power divider, the lower bottom edges of the trapezium pieces are clung to one side of the tail end of the T-shaped junction power divider, and the two trapezium pieces are respectively positioned at the two output ends of the T-shaped junction power divider in the same orientation;

The four special-shaped MEMS switches share the same elastic dielectric film bridge (7), and a metal bridge-shaped passage and a pull-down metal beam on each special-shaped MEMS switch are positioned on the lower surface of the elastic dielectric film bridge, and are supported and suspended through corresponding metal bridge piers, and pull-down electrodes are arranged below the pull-down metal beams;

The metal bridge-shaped passage and the pull-down metal beam on the same special-shaped MEMS switch are adjacent and have no contact,

The two special-shaped MEMS switches corresponding to the upper bottom edge of the trapezoid piece share a pull-down metal bridge, and the shared pull-down metal bridge is of a Chinese character 'ri' -shaped structure;

the pull-down metal bridges of the two special-shaped MEMS switches corresponding to the output ends of the T-shaped junction power divider are of a square-shaped structure.

2. The small terahertz MEMS single-pole four-throw switch based on a shared composite beam according to claim 1, wherein an initial section of a microstrip secondary feeder connected by a trapezoid is parallel to a microstrip primary feeder, and the microstrip secondary feeder connected to the end of a T-junction power divider is perpendicular to the microstrip primary feeder;

3. The shared composite beam-based small terahertz MEMS single-pole, four-throw switch of claim 1, wherein the portion of the elastic dielectric film bridge above the metal bridge-like via is perpendicular to the long side of the metal bridge-like via.

4. The small terahertz MEMS single-pole four-throw switch based on the shared composite beam according to claim 1 is characterized in that a high-frequency low-loss dielectric material is used as a substrate, a corrosion-resistant low-resistivity metal material is used as a metal beam, a compound dielectric material with a low elastic coefficient is used as a dielectric film bridge, the metal beam is manufactured through a sacrificial layer technology, and the dielectric film bridge is tightly adhered to the metal beam, so that the dielectric film bridge can be driven by the downward pulling force of the metal beam.

5. The small terahertz MEMS single-pole four-throw switch based on a common composite beam according to claim 1, wherein the microstrip primary feed line, microstrip secondary feed line, and voltage bias line groups together form a delta configuration.