CN117316757A - Wafer cleaning method and high-voltage semiconductor device manufacturing method - Google Patents
Wafer cleaning method and high-voltage semiconductor device manufacturing method Download PDFInfo
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- CN117316757A CN117316757A CN202311608574.2A CN202311608574A CN117316757A CN 117316757 A CN117316757 A CN 117316757A CN 202311608574 A CN202311608574 A CN 202311608574A CN 117316757 A CN117316757 A CN 117316757A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 243
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 95
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 14
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 14
- 238000005406 washing Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 193
- 239000008367 deionised water Substances 0.000 description 37
- 229910021641 deionized water Inorganic materials 0.000 description 37
- 230000007547 defect Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000003749 cleanliness Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a wafer cleaning method and a high-voltage semiconductor device manufacturing method, and belongs to the technical field of semiconductors. The wafer cleaning method comprises providing a cleaning tank; the wafer is subjected to first cleaning by adopting diluted hydrofluoro liquid in a cleaning tank; after the first cleaning, sequentially performing DIW cleaning, SC1 cleaning and SC2 cleaning on the wafer in the same cleaning tank; the diluted hydrofluoroliquid comprises: hydrogen fluoride and water; reagents for SC1 washing included: ammonia, hydrogen peroxide and water. According to the invention, the wafer is sequentially subjected to the first cleaning, the DIW cleaning, the SC1 cleaning and the SC2 cleaning in the same cleaning tank, so that the operation frequency of lifting and immersing the wafer during cleaning can be reduced. Through carrying out DIW cleaning to the wafer, adopt the continuous washing of certain intensity rivers to the wafer, can take away the water mark and the residue on wafer surface to can block water mark and the residue production on the wafer surface.
Description
Technical Field
The present invention relates to the field of semiconductor technology, and in particular, to a wafer cleaning method and a method for manufacturing a high-voltage semiconductor device.
Background
In the integrated circuit manufacturing process, contamination is caused to the wafer surface by various factors, for example, contamination of the wafer surface caused by residues of organic contaminants in the environment, etching residues, residual solvents and the like in the process engineering of photolithography, etching, deposition, grinding and the like, and the contamination may obstruct and mask the wafer processing process, and nucleation defects are generated in the thin film, so that lattice defects are caused, defects are caused in the electronic device, and the performance of the electronic device is reduced and the yield of the finished product is reduced. Therefore, cleaning of the wafer is particularly important. Particularly, the first cleaning of the high-voltage semiconductor device is very important because the first step of processing after the wafer cleaning is to grow an oxide layer (such as Gate0 oxide layer) on the wafer.
Referring to fig. 4 to 8, fig. 4 is a schematic diagram showing a wafer cleaning in a first cleaning tank; FIG. 5 is a schematic diagram of transferring a wafer from a first rinse tank to a second rinse tank; FIG. 6 is a schematic diagram of a wafer being cleaned in a second cleaning tank; FIG. 7 is a schematic diagram of a transfer of a wafer from a second cleaning tank to a third cleaning tank; fig. 8 is a schematic view of a wafer being cleaned in a third cleaning tank. The wafer cleaning method in the prior art comprises the following specific steps: referring to fig. 4, the wafer 10 is first placed in the first cleaning tank 1 for DHF cleaning to remove oxide on the surface of the wafer 10 and expose silicon. Referring to fig. 5 and 6, the wafer 10 is then transferred from the first cleaning tank 1 to the second cleaning tank 2, and rinsed with deionized water in the second cleaning tank 2 to remove DHF residual reagent on the surface of the wafer 10. Then, referring to fig. 7 and 8, the wafer 10 is transferred from the second cleaning tank 2 to the third cleaning tank 3, and SC1 cleaning is performed in the third cleaning tank 3, the hydrogen peroxide oxidizes silicon on the surface of the wafer 10 into silicon dioxide, and the ammonia water microetches the silicon dioxide to remove organic pollutants or other residues on the surface of the wafer 10. And after the SC1 cleaning is finished, the SC1 cleaning liquid is rapidly emptied, and then the SC2 cleaning liquid is filled for SC2 cleaning, so that the metal on the surface of the wafer 10 is removed.
Referring to fig. 1 to 3, fig. 1 is a schematic view showing that no residue and water mark exist on the surface after the wafer is cleaned; FIG. 2 is a schematic illustration of a wafer after cleaning, the surface having residues and water marks, and bubbles formed by the water marks covering the residues; FIG. 3 is a schematic view of a wafer cross section at a scale of 500 nm. After the wafer 10 is cleaned by DHF, the oxide layer on the surface of the wafer 10 is removed, exposing silicon, and if the wafer 10 itself brings about particles in either the first cleaning tank 1 or the second cleaning tank 2, residues 20 are formed and adhered to the surface of the wafer 10. When entering the third cleaning tank 3, the residues 20 on the surface of the wafer 10, such as the surface of the polluted particles due to water repellency, the water mark 30 on the surface of the wafer 10 generates bubbles as shown in fig. 2 to cover the surface of the polluted particles, silicon in the bubbles cannot be oxidized by hydrogen peroxide to generate silicon dioxide, the subsequent ammonia cannot be microetched, and the protrusions 40 as shown in fig. 3 are formed on the surface of the wafer 10. Therefore, for semiconductor devices, especially high voltage semiconductor devices, when the wafer 10 is cleaned, the surface of the wafer 10 is directly grown with a Gate0 oxide layer in the presence of water mark 30 or residue 20, which may cause defects in the semiconductor devices and reduce the performance of the semiconductor devices and yield of the finished products. With the wafer cleaning method commonly used in the prior art, the whole cleaning process of the wafer 10 needs to be performed in a plurality of cleaning tanks. The above-described cleaning process, the wafer 10 is frequently lifted and immersed, thereby causing the surface of the wafer 10 to be easily provided with residues 20 and water marks 30, thereby causing defects in the processing of the wafer 10, causing defects in the electronic devices, causing reduced performance of the electronic devices, and reduced yield of the finished products.
It should be noted that the information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide a wafer cleaning method, which solves the technical problem that the surface of a wafer has residues and water marks caused by the frequent lifting and immersing operations of the wafer in the conventional wafer cleaning method.
In order to solve the above technical problems, the present invention provides a method for cleaning a wafer, including:
providing a cleaning tank;
carrying out first cleaning on the wafer in the cleaning tank by adopting diluted hydrofluoroliquid;
after the first cleaning, sequentially performing DIW cleaning, SC1 cleaning and SC2 cleaning on the wafer in the same cleaning tank;
the diluted hydrofluoroliquid comprises: hydrogen fluoride and water;
the SC1 cleaning reagent comprises: ammonia, hydrogen peroxide and water;
the SC2 cleaning reagent comprises: hydrochloric acid, hydrogen peroxide and water.
Preferably, in the diluted hydrofluoroliquid, the volume ratio of hydrogen fluoride to water is 100:1.
Preferably, in the diluted hydrofluoroliquid, the volume ratio of hydrogen fluoride to water is 200:1.
Preferably, the time of the first cleaning is 15 seconds to 10 minutes, and the temperature of the first cleaning is room temperature.
Preferably, the time of the first cleaning is 2-5 minutes, and the temperature of the first cleaning is 24-26 ℃.
Preferably, the DIW cleaning time is 1-20 minutes, the flow is 10-90 liters/minute, and the temperature is 20-30 ℃.
Preferably, after the DIW cleaning is completed, the cleaning method of the wafer further includes:
and drying the wafer after DIW cleaning.
Preferably, in the SC1 cleaning, the volume ratio of ammonia water, hydrogen peroxide and water is 1:2:50;
in SC2 cleaning, the volume ratio of hydrochloric acid to hydrogen peroxide to water is 1:1:50.
Based on the same inventive concept, the invention also provides a method for manufacturing a high-voltage semiconductor device, comprising:
carrying out photoetching, etching, deposition and grinding on the wafer in sequence;
the wafer after grinding is cleaned by the wafer cleaning method;
and growing an oxide layer on the surface of the cleaned wafer.
Preferably, the wafer is a silicon wafer.
Compared with the prior art, the wafer cleaning method has the following advantages:
according to the invention, the wafer is subjected to the first cleaning by adopting the diluted hydrofluorocarbon liquid in the cleaning tank, and after the first cleaning, the DIW cleaning, the SC1 cleaning and the SC2 cleaning are sequentially performed in the same cleaning tank, so that the operation frequency of lifting and immersing the wafer during cleaning can be reduced. In addition, through carrying out DIW to the wafer and wasing, adopt the rivers of certain intensity to the wafer continuous washing, can take away the water mark and the residue on wafer surface to can block water mark and the residue production on the wafer surface, avoid wafer processing to have the defect. Especially for high-voltage semiconductor devices, the wafer cleaning method can solve the problem that the electronic devices have defects caused by unclean cleaning, and improves the performance and the yield of the electronic devices.
The method for manufacturing the high-voltage semiconductor device and the method for cleaning the wafer provided by the invention belong to the same conception, so the method for manufacturing the high-voltage semiconductor device at least has all the advantages of the method for cleaning the wafer provided by the invention, and the method for manufacturing the high-voltage semiconductor device can solve the technical problem that the wafer is frequently lifted and immersed during cleaning by adopting diluted hydrogen fluoride liquid to perform first cleaning on the wafer in a cleaning tank, and then sequentially performing DIW cleaning, SC1 cleaning and SC2 cleaning on the wafer in the same cleaning tank. In the manufacturing process of the high-voltage semiconductor device with the oxide layer grown in the first step after the wafer is cleaned, water marks and residues on the surface of the wafer can be taken away, residues and water marks on the surface of the wafer are avoided, defects in the processing of the high-voltage semiconductor device are avoided, and the processing yield of the high-voltage semiconductor device is improved. The problem that defects exist in the electronic device caused by unclean cleaning can be solved, and the performance and the yield of the electronic device are improved.
Drawings
FIG. 1 is a schematic illustration of the absence of residues and water marks on the surface after wafer cleaning.
Fig. 2 is a schematic illustration of the surface with residues and water marks after wafer cleaning, and bubbles formed by the water marks covering the residues.
FIG. 3 is a schematic view of a wafer cross section at a scale of 500 nm.
Fig. 4 is a schematic view of a wafer being cleaned in a first cleaning tank.
Fig. 5 is a schematic diagram of transferring a wafer from a first rinse tank to a second rinse tank.
Fig. 6 is a schematic diagram of a wafer being cleaned in a second cleaning tank.
Fig. 7 is a schematic diagram of a transfer of a wafer from a second cleaning tank to a third cleaning tank.
Fig. 8 is a schematic view of a wafer being cleaned in a third cleaning tank.
Fig. 9 is a schematic diagram of a cleaning flow of a wafer cleaning method according to an embodiment of the invention.
FIG. 10 is a flow chart of a method for cleaning a wafer in accordance with one embodiment of the present invention.
Fig. 11 is a schematic view of a wafer after being cleaned using the cleaning method of the wafer provided in the prior art.
Fig. 12 is a schematic view of a wafer after being cleaned using the cleaning method of the wafer provided by the present invention.
Wherein, 1-a first cleaning tank; 2-a second cleaning tank; 3-a third cleaning tank; 10-wafer; 20-residue; 30-water mark; 40-bulge; 100-cleaning a tank; 110-a drain port; 300-nozzle.
Detailed Description
In order to make the objects, advantages and features of the present invention more apparent, the following more particular description of the cleaning method for wafers according to the present invention will be given with reference to the accompanying drawings and the detailed examples. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. It should be understood that the drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. Specific design features of the invention disclosed herein, including for example, specific dimensions, orientations, positions, and configurations, will be determined in part by the specific intended application and use environment. In the embodiments described below, the same reference numerals are used in common between the drawings to denote the same parts or parts having the same functions, and the repetitive description thereof may be omitted. In this specification, like reference numerals and letters are used to designate like items, and thus once an item is defined in one drawing, no further discussion thereof is necessary in subsequent drawings.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
One embodiment of a method for cleaning a wafer is disclosed with reference to fig. 9-12. The wafer cleaning method comprises the following steps: providing a cleaning tank 100; performing a first cleaning of the wafer 10 with diluted hydrofluoro liquid in the cleaning tank 100; after the first cleaning, the wafer 10 is sequentially subjected to DIW cleaning, SC1 cleaning, and SC2 cleaning in the same cleaning tank 100. The diluted hydrofluoroliquid comprises: hydrogen fluoride and water. Reagents for SC1 washing included: ammonia, hydrogen peroxide and water. Reagents for SC2 washing included: hydrochloric acid, hydrogen peroxide and water.
Referring to fig. 11 and 12, fig. 11 is a schematic view of a wafer after being cleaned using a wafer cleaning method in the prior art; as can be seen from fig. 11, after the wafer 10 is cleaned by the wafer cleaning method in the prior art, water mark 30 and residue 20 remain on the surface of the wafer 10. FIG. 12 is a schematic view of a wafer after being cleaned using the cleaning method of the wafer provided by the present invention; as can be seen from fig. 12, after the wafer 10 is cleaned by the method of the present invention, the surface of the wafer 10 is free from water mark 30 and residues 20.
In this embodiment, after a cleaning tank 100 cleans a wafer 10 with diluted hydrofluoro liquid, the DIW cleaning, SC1 cleaning and SC2 cleaning are sequentially performed on the wafer 10 in the same cleaning tank 100, so that the frequency of lifting and immersing the wafer 10 during cleaning can be reduced. In addition, by performing DIW cleaning on the wafer 10, the wafer 10 is continuously flushed by water flow with a certain intensity, so that the water mark 30 and the residue 20 on the surface of the wafer 10 can be taken away, the generation of the water mark 30 and the residue 20 on the surface of the wafer 10 can be blocked, and the defect in the processing of the wafer 10 is avoided. Especially for semiconductor devices of high-voltage products, the wafer cleaning method can solve the problem that the electronic devices have defects caused by unclean cleaning, and improves the performance and the yield of the electronic devices.
Illustratively, in the cleaning tank 100, after the wafer 10 is cleaned by using the diluted hydrofluoro liquid, the DIW cleaning, the SC1 cleaning and the SC2 cleaning are sequentially performed on the wafer 10 in the same cleaning tank 100, specifically including steps S1 to S5.
Step S1: a cleaning tank 100 is provided.
Specifically, referring to fig. 2, 9 and 10, the cleaning tank 100 has a drain opening 110, wherein the drain opening 110 can be closed and opened. When the drain port 110 is opened, the cleaning agent in the cleaning tank 100 can be drained. When the drain port 110 is closed, a cleaning reagent for cleaning the wafer 10 may be carried in the cleaning tank 100. In addition, the cleaning tank 100 is provided with a nozzle 300. The nozzles 300 may be installed at both sides of the inner wall of the cleaning tank 100 or may be provided at the bottom of the inner wall of the cleaning tank 100. In this embodiment, the wafer 10 is rinsed by using the rising water flow to remove the residues 20 on the surface of the wafer 10, so as to avoid forming the water mark 30, and the nozzle 300 is preferably disposed at the bottom of the inner wall of the cleaning tank 100. The nozzle 300 communicates with an external water inlet line that communicates with a water source during cleaning of the wafer 10. When the nozzle 300 is opened, a water flow is ejected from the nozzle 300 to continuously rinse the wafer 10. As for the number of nozzles 300, in this embodiment, as long as the nozzles 300 spray upward, the water spraying range can completely cover the wafer 10, and the specific number of nozzles 300 is not particularly required.
Step S2: the diluted hydrofluorocarbon liquid is placed in the cleaning tank 100, and the wafer 10 is subjected to the first cleaning.
Specifically, referring to fig. 9 and 10, a diluted hydrofluoro liquid is disposed in a cleaning tank 100 of a cleaning machine, a wafer 10 is placed in the cleaning tank 100, and the cleaning machine is opened to perform a first cleaning of the wafer 10. The cleaning machine is a semiconductor cleaning device commonly used in the prior art, and specific working principles and operation modes thereof are already familiar to those skilled in the art. Since the cleaning machine is not the invention point of the present invention, the description is omitted here. The wafer 10 is first cleaned with dilute hydrofluorocarbon to remove contaminants and oxide layers from the surface of the wafer 10 and expose the silicon. Wherein the diluted hydrofluoroliquid comprises hydrogen fluoride and water. Note that, in the following DIW cleaning, SC1 cleaning, and SC2 cleaning, deionized water is also used. The volume ratio of hydrogen fluoride to deionized water may be 200:1, cleaning the wafer 10 by disposing Hydrogen Fluoride (HF) and deionized water (DIW) in a volume ratio of 200:1 in the cleaning tank 100. The first cleaning of the wafer 10 with the diluted hydrofluoro liquid may be performed for 15 seconds to 10 minutes at a temperature of 20 degrees celsius to 30 degrees celsius. In this embodiment, the preferred time for the first cleaning of the wafer 10 with the diluted hydrofluorocarbon solution is 1 minute to 6 minutes, more preferably 2 minutes to 5 minutes, and most preferably 3 minutes to 4 minutes. The temperature at which the wafer 10 is first cleaned with the diluted hydrofluorocarbon liquid is more preferably 22-28 degrees celsius, and most preferably 24-26 degrees celsius.
Illustratively, the hydrogen fluoride to deionized water volume ratio may also be 100:1. the specific volume ratio of hydrogen fluoride to deionized water is selected based on the actual requirements of the wafer 10 in performing the first cleaning. When the diluted hydrofluorocarbon liquid was prepared, the concentration of hydrogen fluoride was 49%.
Step S3: the diluted hydrofluorocarbon liquid in the cleaning tank 100 is discharged, and the DIW cleaning reagent is disposed in the cleaning tank 100 to perform DIW cleaning on the wafer 10.
Specifically, referring to fig. 2, 3, 9 and 10, the diluted hydrofluoroliquid in the cleaning tank 100 may be discharged when the drain outlet 110 is in an open state. The DIW cleaning reagent is preferably deionized water. The wafer 10 is rinsed with deionized water in the direction shown by the arrow in fig. 9 to remove residues 20 of the wafer 10 itself or organic residues in the environment or particles adhered to the silicon surface of the wafer in the tank, so that the water mark 30 and residues 20 on the surface of the wafer 10 can be blocked. The formation of bumps 40 on the surface of the wafer 10 is avoided to improve the yield and performance of the wafer 10. In this embodiment, the wafer 10 is rinsed with deionized water for a period of preferably 1 minute to 2 minutes, more preferably 3 minutes to 18 minutes, more preferably 5 minutes to 16 minutes, more preferably 7 minutes to 14 minutes, and most preferably 9 minutes to 12 minutes. When the wafer 10 is rinsed with deionized water, the flow rate of the nozzle 300 is preferably 10 to 90 liters/min, more preferably 20 to 80 liters/min, still more preferably 30 to 70 liters/min, and most preferably 40 to 60 liters/min. Here, the unit "liter/minute" means that the flow rate of deionized water ejected from the nozzle 300 is 1 liter per minute. The temperature at which the wafer 10 is rinsed with deionized water is preferably room temperature, more preferably 20 degrees celsius to 30 degrees celsius, still more preferably 22 degrees celsius to 28 degrees celsius, and most preferably 24 degrees celsius to 26 degrees celsius.
Further, in order to further improve the cleaning effect of the wafer 10, after the wafer 10 is subjected to DIW cleaning, the cleaning method of the wafer further includes drying the wafer 10 after the DIW cleaning. The specific drying temperature of the wafer 10 is consistent with the drying temperature of the wafer 10 in the prior art, and the drying temperature of the wafer 10 can be 30-50 ℃.
It should be noted that, in order to enable the cleanliness of the wafer 10 to meet the actual production requirements, the DIW cleaning operation may be performed on the wafer 10 multiple times.
Step S4: the DIW-cleaning reagent in the cleaning tank 100 is discharged, and the SC 1-cleaning reagent is placed in the cleaning tank 100 to clean the wafer 10 with SC 1.
Specifically, referring to fig. 9 and 10, the drain outlet 110 is opened, and after the deionized water in the rinse tank 100 is drained, the drain outlet 110 is closed. The SC1 cleaning reagent is disposed in the cleaning tank 100, and the SC1 cleaning is performed on the wafer 10 to microetch the surface of the wafer 10, so that the exposed silicon on the surface of the wafer 10 is oxidized into silicon dioxide. At the same time, organic and inorganic contaminants on the surface of the wafer 10 can be removed and the surface of the wafer 10 can be restored to a cleaner state. Wherein, the reagent for SC1 cleaning comprises: ammonia, hydrogen peroxide and deionized water. The volume ratio of the ammonia water to the hydrogen peroxide to the water is 1:2:50. The concentration of hydrogen peroxide and ammonia water can be consistent with the concentration commonly used in the prior art. For example, the concentration of hydrogen peroxide is 30% and the concentration of ammonia is 27%. The time for SC1 cleaning of the wafer is 1 minute to 10 minutes, preferably 2 minutes to 9 minutes, more preferably 3 minutes to 8 minutes, more preferably 4 minutes to 7 minutes, and most preferably 5 minutes to 6 minutes. The temperature at which the SC1 cleaning of the wafer 10 is performed may be room temperature, preferably 20 to 30 degrees celsius, more preferably 22 to 28 degrees celsius, and most preferably 24 to 26 degrees celsius.
Further, as shown in fig. 2 and 10, in order to further improve the cleanliness of the wafer 10, water mark 30 and residue 20 are further prevented from being generated on the surface of the wafer 10, and after SC1 cleaning of the wafer 10, DIW cleaning of the wafer 10 may be performed again. The conditions for performing DIW cleaning on the wafer 10 are identical to those for performing rinsing on the wafer 10 in the above step S3, and will not be described here again. Of course, the wafer 10 may be dried after the wafer 10 is cleaned.
Step S5: the SC1 cleaning reagent in the cleaning tank 100 is discharged, and the SC2 cleaning reagent is placed in the cleaning tank 100, so that the SC2 cleaning is performed on the wafer 10.
Specifically, referring to fig. 9 and 10, the water outlet 110 is opened, the SC1 cleaning reagent in the cleaning tank 100 is discharged, the SC2 cleaning reagent is placed in the cleaning tank 100, and the SC2 cleaning is performed on the wafer 10 to remove the metal on the surface of the wafer 10. Wherein, the reagent for SC2 cleaning comprises: hydrochloric acid, hydrogen peroxide and deionized water. The volume ratio of hydrochloric acid to hydrogen peroxide to water is 1:1:50. The concentration of hydrogen peroxide and hydrochloric acid is consistent with the concentration commonly used in the prior art. For example, the concentration of hydrogen peroxide is 30% and the concentration of hydrochloric acid is 37%. The time for SC2 cleaning the wafer 10 is 1 minute to 10 minutes, preferably 2 minutes to 9 minutes, more preferably 3 minutes to 8 minutes, still more preferably 4 minutes to 7 minutes, and most preferably 5 minutes to 6 minutes. The temperature at which the SC2 cleaning of the wafer 10 is performed may be room temperature, preferably 20 degrees celsius to 30 degrees celsius, more preferably 22 degrees celsius to 28 degrees celsius, and most preferably 24 degrees celsius to 26 degrees celsius.
The embodiment also discloses a manufacturing method of the high-voltage semiconductor device, which comprises the following steps: carrying out photoetching, etching, deposition and grinding on the wafer 10 in sequence; the wafer 10 after polishing is cleaned by the above-described wafer cleaning method; an oxide layer is grown on the surface of the wafer 10 after cleaning.
Referring to fig. 2 and 3, the difference between the high voltage semiconductor device and other semiconductor devices is that an oxide layer (e.g., gate0 oxide layer) is grown in the first step of processing after the wafer 10 is cleaned, so that the initial cleaning of the wafer 10 is particularly important. After the photolithography, etching, deposition, and polishing processes are sequentially performed on the wafer 10, water marks 30 and residues 20 remain on the surface of the wafer 10. If an oxide layer is directly grown on the surface of the wafer 10 where the water mark 30 and the residue 20 remain, the bump 40 is formed on the surface of the wafer, which may cause defects in the high voltage semiconductor device and reduce the performance of the high voltage semiconductor device and yield of the finished product.
The method for manufacturing a high-voltage semiconductor device according to the present embodiment belongs to the same inventive concept as the method for cleaning a wafer according to the present embodiment, and therefore, the method for manufacturing a high-voltage semiconductor device according to the present embodiment has at least all the advantages of the method for cleaning a wafer according to the present embodiment, and therefore, the method for manufacturing a high-voltage semiconductor device according to the present embodiment can solve the technical problem that the operations of lifting and immersing the wafer 10 are frequently performed during cleaning by sequentially performing the first cleaning, the DIW cleaning, the SC1 cleaning, and the SC2 cleaning of the wafer 10 in one cleaning tank 100. In the manufacturing process of the high-voltage semiconductor device with the oxide layer grown in the first step after the wafer 10 is cleaned, the water mark 30 and the residue 20 on the surface of the wafer 10 can be taken away, the residue 20 and the water mark 30 on the surface of the wafer 10 are avoided, the defect in the processing of the high-voltage semiconductor device is avoided, and the processing yield of the high-voltage semiconductor device is improved. The problem that defects exist in the electronic device caused by unclean cleaning can be solved, and the performance and the yield of the electronic device are improved.
Wafers are manufactured from wafers comprising a variety of materials, most commonly Silicon (Silicon) wafers and Sapphire (Sapphire) wafers. Silicon wafers are the most widely used wafer material in the semiconductor field and are used to fabricate various types of semiconductor devices, including high voltage semiconductor devices. Silicon wafers have good electrical characteristics and workability, and have mature technology in the manufacturing process, so that the wafer 10 in this embodiment is manufactured from silicon wafers.
In summary, the above invention describes in detail different configurations of the wafer cleaning method, however, the above description is only a description of the preferred embodiments of the invention, and the invention includes but is not limited to the configurations listed in the above implementation, and those skilled in the art can make any changes and modifications according to the above disclosure, which fall within the scope of the claims.
Claims (10)
1. A method for cleaning a wafer, comprising:
providing a cleaning tank;
carrying out first cleaning on the wafer in the cleaning tank by adopting diluted hydrofluoroliquid;
after the first cleaning, sequentially performing DIW cleaning, SC1 cleaning and SC2 cleaning on the wafer in the same cleaning tank;
the diluted hydrofluoroliquid comprises: hydrogen fluoride and water;
the SC1 cleaning reagent comprises: ammonia, hydrogen peroxide and water;
the SC2 cleaning reagent comprises: hydrochloric acid, hydrogen peroxide and water.
2. The method of claim 1, wherein the diluted hydrofluoroliquid has a volume ratio of hydrogen fluoride to water of 100:1.
3. The method of claim 1, wherein the diluted hydrofluoroliquid has a volume ratio of hydrogen fluoride to water of 200:1.
4. The method of claim 3, wherein the first cleaning time is 15 seconds to 10 minutes and the first cleaning temperature is room temperature.
5. The method of claim 3, wherein the first cleaning time is 2 to 5 minutes and the first cleaning temperature is 24 to 26 degrees celsius.
6. The method of claim 1, wherein the DIW cleaning time is 1 to 20 minutes, the flow rate is 10 to 90 liters/minute, and the temperature is 20 to 30 degrees celsius.
7. The method for cleaning a wafer according to claim 1, wherein after the DIW cleaning is completed, the method further comprises:
and drying the wafer after DIW cleaning.
8. The method for cleaning a wafer according to claim 1, wherein in the SC1 cleaning, a volume ratio of ammonia water, hydrogen peroxide and water is 1:2:50;
in the SC2 cleaning, the volume ratio of hydrochloric acid to hydrogen peroxide to water is 1:1:50.
9. A method of manufacturing a high voltage semiconductor device, comprising:
carrying out photoetching, etching, deposition and grinding on the wafer in sequence;
cleaning the polished wafer using the cleaning method of the wafer according to any one of claims 1 to 8;
and growing an oxide layer on the surface of the cleaned wafer.
10. The method of manufacturing a high voltage semiconductor device according to claim 9, wherein the wafer is a silicon wafer.
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| KR19990005636U (en) * | 1997-07-18 | 1999-02-18 | 윤종용 | Wafer Cleaner |
| JP2002134462A (en) * | 2000-10-25 | 2002-05-10 | Sony Corp | Method of manufacturing semiconductor device |
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