CN117312333A

CN117312333A - Process parameter adjustment method, system, production system and computer equipment

Info

Publication number: CN117312333A
Application number: CN202210710805.XA
Authority: CN
Inventors: 荀利凯; 唐毓英; 刘勇兴
Original assignee: Chongqing Kangjia Optoelectronic Technology Co ltd
Current assignee: Chongqing Kangjia Optoelectronic Technology Co ltd
Priority date: 2022-06-22
Filing date: 2022-06-22
Publication date: 2023-12-29

Abstract

The present application relates to a process parameter adjustment method, system, production system, computer device, storage medium and computer program product. The process parameter adjusting method comprises the following steps: acquiring an adjustment coefficient; acquiring process parameters of a process for forming a target structure on a previous substrate and measurement data of the target structure formed on the previous substrate; and automatically adjusting the process parameters of the current substrate for forming the target structure based on the adjustment coefficient, the process parameters of the previous substrate for forming the target structure and the measurement data. The process parameter adjusting method can adjust the process parameters of the process for forming the target structure on the current substrate in real time, can avoid the problems of abnormality and the like of products caused by not updating the parameters for a long time, omits the operation of manually and regularly going to a production workshop to modify the parameters, effectively avoids the occurrence of artificial subjective judgment and human errors, can help to obtain more accurate process parameters, and improves the product yield and the enterprise competitiveness.

Description

Process parameter adjustment method, system, production system and computer equipment

Technical Field

The present application relates to the field of semiconductor processing technology, and in particular, to a process parameter adjustment method, system, production system, computer device, storage medium, and computer program product.

Background

With the development of semiconductor technology, the intelligent requirements of all parties in the production process of products are higher and higher.

In the process of semiconductor products, the adjustment of various process parameters depends on engineers to manually sort and analyze the current measurement data, and then modify the related parameters of the machine to make the output data more approximate to the target value. The operation mode makes engineers need to sort a large amount of data, which is time-consuming and has artificial subjective judgment, and the modification workload of parameters is huge, and a large error can occur if the parameters are neglected slightly.

Disclosure of Invention

To solve the above problems, a process parameter adjustment method, system, production system, computer device, storage medium, and computer program product are provided.

In order to achieve the above object, in a first aspect, the present application provides a process parameter adjustment method, including:

acquiring an adjustment coefficient;

acquiring process parameters of a process for forming a target structure on a previous substrate and measurement data of the target structure formed on the previous substrate;

And automatically adjusting the process parameters of the current substrate for forming the target structure based on the adjustment coefficient, the process parameters of the previous substrate for forming the target structure and the measurement data.

According to the process parameter adjusting method, the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate are automatically adjusted based on the adjusting coefficient, the process parameters of the target structure formed on the previous substrate and the measurement data, so that the process parameters of the target structure formed on the current substrate can be adjusted in real time, the problem that the product is abnormal due to the fact that the parameters are not updated for a long time can be avoided, in addition, the process parameters of the current substrate with the target structure are automatically adjusted, the operation of manually and regularly correcting parameters in a production workshop is omitted, the occurrence of artificial subjective judgment and artificial errors is effectively avoided, more accurate process parameters can be helped, and the product yield and the enterprise competitiveness are improved.

In one embodiment, the obtaining the adjustment coefficient includes: acquiring a temperature adjustment coefficient;

The process parameters include a process temperature; the measurement data comprises a measurement wavelength and a target wavelength;

the automatic adjustment of the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate and the measurement data comprises: and automatically adjusting the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate and the target wavelength.

In one embodiment, the automatically adjusting the process temperature of the target structure on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure on the previous substrate, the measured wavelength of the target structure on the previous substrate, and the target wavelength includes:

based on the temperature adjustment coefficient, the process temperature of forming the target structure on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate and the target wavelength, automatically adjusting the process temperature of forming the target structure on the current substrate by using a first target formula, wherein the first target formula is as follows:

T _N ＝T _N-1 +K _N ×(WLD _N-1 -WLD ₀ )

Wherein T is _N The process temperature for forming the target structure on the current substrate; t (T) _N-1 The process temperature for forming the target structure on the previous substrate; k (K) _N Is a temperature adjustment coefficient; WLD (wafer level device) _N-1 Measuring wavelength of a target structure formed on a previous substrate; WLD (wafer level device) ₀ Is the target wavelength; n is an integer greater than 1.

In one embodiment, the acquiring the temperature adjustment coefficient includes:

setting temperature reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the process temperature for forming the target structure on each substrate is the value of the process temperature for forming the target structure on the previous substrate plus the temperature reference coefficient;

establishing a process temperature-measuring wavelength coordinate system by taking the process temperature of the target structure formed on each substrate as an abscissa and the measuring wavelength of the target structure formed on each substrate as an ordinate;

and fitting to obtain a fitting curve of the process temperature and the measurement wavelength and a slope of the fitting curve of the process temperature and the measurement wavelength based on the process temperature of the target structure formed on each substrate and the measurement wavelength of the target structure formed on each substrate, and determining the slope of the fitting curve of the process temperature and the measurement wavelength as the temperature adjustment coefficient.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes: and forming an epitaxial structure on the substrate at a process temperature.

In one embodiment, the obtaining the adjustment coefficient further includes: acquiring a flow adjustment coefficient;

the process parameters also include process reaction gas flow; the measurement data comprise measurement warpage and target warpage; the automatic adjustment of the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate and the measurement data comprises: and automatically adjusting the flow rate of the process reaction gas for forming the target structure on the current substrate based on the flow rate adjustment coefficient, the flow rate of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage.

In one embodiment, the automatically adjusting the flow of the process reaction gas for forming the target structure on the current substrate based on the flow adjustment coefficient, the flow of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage includes:

Based on the flow adjustment coefficient, the flow of the process reaction gas forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage, automatically adjusting the flow of the process reaction gas forming the target structure on the current substrate by using a second target formula, wherein the second target formula is as follows:

Flow _N ＝Flow _N-1 +α _N ×(Dev _N-1 -Dev ₀ )

wherein, flow is as follows _N The flow of process reaction gas for forming a target structure on the current substrate; flow (Flow) _N-1 The flow of process reactant gas for forming a target structure on a previous substrate; alpha _N Is a flow adjustment coefficient; dev _N-1 Warpage for a target structure formed on a previous substrate; dev ₀ Is the target warpage; n is an integer greater than 1.

In one embodiment, the obtaining the flow adjustment coefficient includes:

setting flow reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the flow rate of the process reaction gas forming the target structure on each substrate is the value of the flow rate of the reaction gas forming the target structure on the previous substrate plus the flow reference coefficient;

establishing a process reaction gas flow-measuring warp coordinate system by taking the process reaction gas flow of forming the target structure on each substrate as an abscissa and taking the measuring warp of the target structure formed on each substrate as an ordinate;

And fitting to obtain a fitting curve of the flow rate of the process reaction gas and the measured warpage and a slope of the fitting curve of the flow rate of the process reaction gas and the measured warpage based on the flow rate of the process reaction gas on each substrate for forming the target structure and the measured warpage of the target structure formed on each substrate, and determining the slope of the fitting curve of the flow rate of the process reaction gas and the measured warpage as the flow adjustment coefficient.

In one embodiment, the process gas flow for forming the target structure on the previous substrate includes a process gas flow for forming the epitaxial structure on the substrate.

In a second aspect, the present application further provides a process parameter adjustment system, including:

the first acquisition device is used for acquiring the adjustment coefficient;

the second acquisition device is used for acquiring the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;

the processing device is connected with the first acquisition device and the second acquisition device and is used for generating an automatic adjusting signal for automatically adjusting the process parameters of the process for forming the target structure on the current substrate based on the adjusting coefficient, the process parameters of the process for forming the target structure on the previous substrate and the measurement data.

According to the process parameter adjusting system, the first acquisition device is used for acquiring the adjusting coefficient, the second acquisition device is used for acquiring the process parameter of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate, and the processing device is used for automatically adjusting the process parameter of the target structure formed on the current substrate based on the adjusting coefficient, the process parameter of the target structure formed on the previous substrate and the measurement data, so that the process parameter of the target structure formed on the current substrate can be adjusted in real time, and the problems of abnormal products and the like caused by long-time non-updating of the parameters can be avoided; in addition, the processing device automatically adjusts the process parameters of the process for forming the target structure on the current substrate, omits the operation of manually and regularly going to a production workshop to modify the parameters, effectively avoids the occurrence of artificial subjective judgment and human errors, can help to obtain more accurate process parameters, and improves the product yield and the enterprise competitiveness.

In one embodiment, the adjustment factor comprises a temperature adjustment factor; the process parameters of forming the target structure on each substrate include the process temperature; the measurement data comprises a measurement wavelength and a target wavelength; the first acquisition device comprises a temperature adjustment coefficient acquisition module, wherein the temperature adjustment coefficient acquisition module is used for acquiring the temperature adjustment coefficient; the processing device comprises a first processing module, wherein the first processing module is connected with the second acquisition device and the temperature adjustment coefficient acquisition module and is used for generating an automatic adjustment signal for automatically adjusting the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate and the target wavelength.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes a process temperature for forming the epitaxial structure on the substrate.

In one embodiment, the adjusting coefficients further include a flow adjusting coefficient, and the process parameters for forming the target structure on each substrate further include a process reaction gas flow; the measurement data comprise measurement warpage and target warpage; the first acquisition device further comprises a flow adjustment coefficient acquisition module, wherein the flow adjustment coefficient acquisition module is used for acquiring the flow adjustment coefficient; the processing device comprises a second processing module, wherein the second processing module is connected with the second acquisition device and the flow adjustment coefficient acquisition module and is used for generating an automatic adjustment signal for automatically adjusting the flow of the process reaction gas for forming the target structure on the current substrate based on the flow adjustment coefficient, the flow of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage.

In a third aspect, the present application also provides a production system comprising:

the process equipment is used for forming a target structure on each substrate and acquiring process parameters of the target structure on each substrate;

the measuring equipment is connected with the process equipment and is used for measuring the target structure formed on each substrate and acquiring measurement data of the target structure formed on each substrate;

the process parameter tuning system of any one of the above embodiments, coupled to the process tool and the metrology tool.

The production system comprises the process parameter adjustment system, wherein the first acquisition device acquires the adjustment coefficient, the second acquisition device acquires the process parameter of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate, and the processing device automatically adjusts the process parameter of the target structure formed on the current substrate based on the adjustment coefficient, the process parameter of the target structure formed on the previous substrate and the measurement data, so that the process parameter of the target structure formed on the current substrate can be adjusted in real time, and the problems of abnormal products and the like caused by long-time non-updating of the parameters can be avoided; in addition, the processing device automatically adjusts the process parameters of the process for forming the target structure on the current substrate, omits the operation of manually and regularly going to a production workshop to modify the parameters, effectively avoids the occurrence of artificial subjective judgment and human errors, can help to obtain more accurate process parameters, and improves the product yield and the enterprise competitiveness.

In a fourth aspect, the present application further provides a computer device, including a memory and a processor, where the memory stores a computer program, and the processor implements the steps of the process parameter adjustment method according to any one of the embodiments above when the computer program is executed.

In a fifth aspect, the present application further provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the process parameter adjustment method according to any of the embodiments described above.

In a sixth aspect, the present application also provides a computer program product comprising a computer program which, when executed by a processor, implements the steps of the process parameter adjustment method according to any one of the embodiments described above.

The details of one or more embodiments of the application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will be apparent from the description and drawings, and from the claims.

Drawings

In order to more clearly illustrate the technical solutions of embodiments or conventional techniques of the present application, the drawings required for the descriptions of the embodiments or conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.

For a better description and illustration of embodiments and/or examples of those disclosed herein, reference may be made to one or more of the accompanying drawings. Additional details or examples used to describe the drawings should not be construed as limiting the scope of the disclosed invention, the presently described embodiments and/or examples, and any of the presently understood modes of carrying out the invention.

FIG. 1 is a flow chart of a process parameter adjustment method provided in one embodiment;

FIG. 2 is a flow chart of obtaining temperature adjustment coefficients in a process parameter adjustment method according to one embodiment;

FIG. 3 is a graph showing the process temperature versus the measured wavelength obtained in step S203 of the process parameter adjustment method according to one embodiment; wherein K is _N Is a temperature adjustment coefficient;

FIG. 4 is a graph showing the measured warpage versus standard deviation of the luminescence wavelength obtained in the process parameter tuning method provided in one embodiment; wherein Dev ₀ Is the target warpage;

FIG. 5 is a schematic top view of a target structure in a process parameter tuning method according to an embodiment;

FIG. 6 is a flow chart of obtaining flow adjustment coefficients in a process parameter adjustment method provided in one embodiment;

FIG. 7 is a diagram of process parameter adjustment provided in one embodiment Step S603 in the method is used for obtaining a fitting curve of the flow rate of the process reaction gas and the measurement warpage; wherein alpha is _N Is a flow adjustment coefficient;

FIG. 8 is a schematic diagram of a process parameter adjustment system according to an embodiment;

FIG. 9 is a schematic diagram of a process parameter tuning system according to another embodiment;

FIG. 10 is a schematic diagram of a process parameter tuning system according to another embodiment;

FIG. 11 is a schematic diagram of a production system provided in one embodiment;

fig. 12 is an internal structural diagram of a computer device in one embodiment.

Reference numerals illustrate:

1. a first acquisition device; 11. a temperature adjustment coefficient acquisition module; 12. a flow adjustment coefficient acquisition module; 2. a second acquisition device; 3. a processing device; 31. a first processing module; 32. a second processing module; 100. a process device; 200. a measuring device; 300. and a process parameter adjusting system.

Detailed Description

In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent, connected, or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers present.

Spatially relative terms, such as "under", "below", "beneath", "under", "above", "over" and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "below" and "under" may include both an upper and a lower orientation. Furthermore, the device may also include an additional orientation (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.

As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.

According to various embodiments of the present application, a process parameter adjustment method, system, production system, computer device, storage medium, and computer program product are provided.

In order to achieve the above object, in a first aspect, the present application provides a process parameter adjustment method, as shown in fig. 1, the process parameter adjustment method may include the following steps:

s101: acquiring an adjustment coefficient;

s102: acquiring process parameters of a process for forming a target structure on a previous substrate and measurement data of the target structure formed on the previous substrate;

s103: and automatically adjusting the process parameters of the current substrate for forming the target structure based on the adjustment coefficient, the process parameters of the previous substrate for forming the target structure and the measurement data.

In the above example, the process parameter adjusting method automatically adjusts the process parameter of the target structure formed on the current substrate based on the adjustment coefficient, the process parameter of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate, so as to adjust the process parameter of the target structure formed on the current substrate in real time, avoid the problem of abnormal product caused by long-time non-update of the parameter, and automatically adjust the process parameter of the current substrate forming the target structure, save the operation of manually timing to modify the parameters in the production workshop, effectively avoid the occurrence of artificial subjective judgment and artificial error, help to obtain more accurate process parameters, and improve the product yield and enterprise competitiveness.

In one embodiment, obtaining the adjustment coefficient includes: acquiring a temperature adjustment coefficient; the process parameters include process temperature; the measurement data comprises a measurement wavelength and a target wavelength; the automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate and the measurement data comprises: the process temperature of forming the target structure on the current substrate is automatically adjusted based on the temperature adjustment coefficient, the process temperature of forming the target structure on the previous substrate, the measured wavelength of the target structure formed on the previous substrate and the target wavelength.

Specifically, the process temperature for forming the target structure on the previous substrate refers to the process temperature adopted when forming the target structure on the previous substrate, and the process temperature data can be obtained in real time during the process. The measurement wavelength refers to the luminescence wavelength of the target structure obtained by performing photoluminescence test on the target structure after the target structure is formed on the substrate. The target wavelength refers to an ideal emission wavelength of the target structure expected to be obtained under the photoluminescence test, and may be an emission wavelength of a central region of the ideal target structure.

In one embodiment, automatically adjusting the process temperature of forming the target structure on the current substrate based on the temperature adjustment coefficient, the process temperature of forming the target structure on the previous substrate, the measured wavelength of the target structure formed on the previous substrate, and the target wavelength comprises:

T _N ＝T _N-1 +K _N ×(WLD _N-1 -WLD ₀ )

In one embodiment, N may be, but is not limited to being, an integer greater than 5.

In one embodiment, obtaining the temperature adjustment coefficient may include the steps of:

s201: setting temperature reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the process temperature for forming the target structure on each substrate is the value of the process temperature for forming the target structure on the previous substrate plus the temperature reference coefficient;

s202: establishing a process temperature-measuring wavelength coordinate system by taking the process temperature of the target structure formed on each substrate as an abscissa and the measuring wavelength of the target structure formed on each substrate as an ordinate;

s203: and based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate, fitting to obtain a fitting curve of the process temperature-measurement wavelength and the slope of the fitting curve of the process temperature-measurement wavelength, and determining the slope of the fitting curve of the process temperature-measurement wavelength as a temperature adjustment coefficient.

In one embodiment, step S203 may refer to fig. 3, where a process temperature-measurement wavelength fitting curve and a slope of the process temperature-measurement wavelength fitting curve are obtained by fitting based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate; the slope of the process temperature-measurement wavelength fitting curve is the value of the temperature adjustment coefficient, i.e. the dashed line K in FIG. 3 _N And fitting the curve corresponding to the obtained temperature adjustment coefficient.

Specifically, the temperature reference coefficient is a known temperature adjustment empirical value.

In one embodiment, the target structure may comprise an epitaxial structure, and the process temperature for forming the target structure on the previous substrate comprises the process temperature for forming the epitaxial structure on the substrate. The measurement wavelength of the target structure formed on the previous substrate comprises the light emitting wavelength of the epitaxial structure obtained by performing photoluminescence test on the epitaxial structure after the epitaxial structure is formed on the substrate.

Specifically, the epitaxial structure may include a quantum well layer, and the process temperature for forming the epitaxial structure may be a process temperature used in forming the quantum well layer.

In one embodiment, obtaining the adjustment coefficient further comprises: acquiring a flow adjustment coefficient; the process parameters also include process reactant gas flow; the measurement data comprise measurement warpage and target warpage; the automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate and the measurement data comprises: and automatically adjusting the flow rate of the process reaction gas for forming the target structure on the current substrate based on the flow rate adjustment coefficient, the flow rate of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage.

Specifically, the process reactant gas may include, but is not limited to, nitrogen, gaseous gallium, or gaseous indium.

In one embodiment, automatically adjusting the process reaction gas flow for forming the target structure on the current substrate based on the flow adjustment coefficient, the process reaction gas flow for forming the target structure on the previous substrate, the measured warp and the target warp of the target structure formed on the previous substrate, comprises:

based on the flow adjustment coefficient, the flow of the process reaction gas forming the target structure on the previous substrate, the measured warp degree and the target warp degree of the target structure formed on the previous substrate, and the flow of the process reaction gas forming the target structure on the current substrate is automatically adjusted by using a second target formula, wherein the second target formula is as follows:

Flow _N ＝Flow _N-1 +α _N ×(Dev _N-1 -Dev ₀ )

Specifically, the flow rate of the process reaction gas for forming the target structure on the previous substrate refers to the flow rate of the process reaction gas used for forming the target structure on the previous substrate, and the flow rate data of the process reaction gas can be obtained in real time during the process. The warp measurement refers to the warp measurement of the target structure obtained by performing a warp test on the target structure after the target structure is formed on the substrate. The target warpage is obtained by fitting the measured warpage of the target structure formed on each substrate and the standard deviation of the emission wavelength of the target structure to obtain a fitting curve of the measured warpage-standard deviation of the emission wavelengthAs shown in FIG. 4, the fitted curve for measuring the warpage-emission wavelength standard deviation is generally a parabola, and the vertex of the parabola is the target warpage Dev ₀ 。

In one embodiment, the warp test is performed on the target structure to obtain the measured warp of the target structure, the average emission wavelength of each region obtained by performing the photoluminescence test on the central region of the target structure and each region located at the periphery of the central region and sequentially arranged along the periphery of the central region may be then calculated by using a third target formula in combination with fig. 5, where the third target formula is:

Dev _N-1 ＝a×8/(b+c+d+e+f+g+h+i)

Referring to the schematic top view structure of the target structure shown in fig. 5, a in the third target formula is an average light emission wavelength of a central region a of the target structure, and B to I are average light emission wavelengths of each of regions B to I located at the periphery of the central region and sequentially arranged along the periphery of the central region.

In one embodiment, obtaining the flow adjustment coefficient may include the steps of:

s601: setting flow reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the flow rate of the process reaction gas forming the target structure on each substrate is the value of the flow rate of the reaction gas forming the target structure on the previous substrate plus the flow reference coefficient;

s602: establishing a process reaction gas flow-measuring warp coordinate system by taking the process reaction gas flow of forming the target structure on each substrate as an abscissa and taking the measuring warp of the target structure formed on each substrate as an ordinate;

s603: fitting to obtain a fitting curve of the process reaction gas flow rate-the measured warpage and a slope of the fitting curve of the process reaction gas flow rate-the measured warpage based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate, and determining the slope of the fitting curve of the process reaction gas flow rate-the measured warpage as a flow adjustment coefficient.

In one example, step S603 may refer to fig. 7, where a fitting curve of the process reaction gas flow-measured warpage and a slope of the fitting curve of the process reaction gas flow-measured warpage are obtained by fitting based on the process reaction gas flow of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate; the slope of the process reaction gas flow-measurement warp curve is the flow adjustment coefficient, i.e. the dashed line alpha in FIG. 7 _N And fitting the curve corresponding to the obtained flow adjustment coefficient.

In one embodiment, the target structure may comprise an epitaxial structure, and the process reactant gas flow for forming the target structure on the previous substrate comprises a process reactant gas flow for forming the epitaxial structure on the substrate. Measuring the warpage of the target structure formed on the previous substrate comprises testing the warpage of the epitaxial structure obtained by forming the epitaxial structure on the substrate.

Specifically, the epitaxial structure may include a buffer layer, and the flow rate of the process reaction gas for forming the epitaxial structure may be the flow rate of the process reaction gas used for forming the buffer layer.

It should be understood that, although the steps in the flowcharts related to the above embodiments are sequentially shown as indicated by arrows, these steps are not necessarily sequentially performed in the order indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least some of the steps in the flowcharts described in the above embodiments may include a plurality of steps or a plurality of stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily performed sequentially, but may be performed alternately or alternately with at least some of the other steps or stages.

In a second aspect, the present application further provides a process parameter adjustment system, as shown in fig. 8, where the process parameter adjustment system includes:

first acquisition means 1 for acquiring an adjustment coefficient;

a second obtaining device 2, configured to obtain a process parameter of a target structure formed on a previous substrate and measurement data of the target structure formed on the previous substrate;

the processing device 3 is connected with the first acquisition device 1 and the second acquisition device 2, and is used for generating an automatic adjusting signal for automatically adjusting the process parameters of the process for forming the target structure on the current substrate based on the adjusting coefficient, the process parameters of the process for forming the target structure on the previous substrate and the measurement data.

In the above example, the process parameter adjusting system acquires the adjustment coefficient through the first acquiring device 1, acquires the process parameter of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate through the second acquiring device 2, and adjusts the process parameter of the target structure formed on the current substrate in real time through the processing device 3 based on the adjustment coefficient, the process parameter of the target structure formed on the previous substrate and the automatic adjustment signal for automatically adjusting the process parameter of the target structure formed on the current substrate by the measurement data, so that the problem that the product is abnormal and the like caused by not updating the parameter for a long time can be avoided; in addition, the processing device 3 automatically adjusts the process parameters of the process for forming the target structure on the current substrate, omits the operation of manually and regularly correcting parameters in a production workshop, effectively avoids the occurrence of artificial subjective judgment and human errors, can help to obtain more accurate process parameters, and improves the product yield and the enterprise competitiveness.

In one embodiment, as shown in FIG. 9, the adjustment coefficients include temperature adjustment coefficients; the process parameters of forming the target structure on each substrate include the process temperature; the measurement data comprises a measurement wavelength and a target wavelength; the first obtaining device 1 includes a temperature adjustment coefficient obtaining module 11, where the temperature adjustment coefficient obtaining module 11 is configured to obtain a temperature adjustment coefficient; the processing device 3 includes a first processing module 31, where the first processing module 31 is connected to the second obtaining device 2 and the temperature adjustment coefficient obtaining module 11, and is configured to generate an automatic adjustment signal for automatically adjusting the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measured wavelength of the target structure formed on the previous substrate, and the target wavelength.

In one embodiment, the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate. The measurement wavelength of the target structure formed on the previous substrate comprises the light emitting wavelength of the epitaxial structure obtained by performing photoluminescence test on the epitaxial structure after the epitaxial structure is formed on the substrate.

In one embodiment, as shown in fig. 10, the adjustment coefficients further include a flow adjustment coefficient, and the process parameters for forming the target structure on each substrate further include a process reaction gas flow; the measurement data comprise measurement warpage and target warpage; the first obtaining device 1 further includes a flow adjustment coefficient obtaining module 12, where the flow adjustment coefficient obtaining module 12 is configured to obtain a flow adjustment coefficient; the processing device 3 includes a second processing module 32, where the second processing module 32 is connected to the second obtaining device 2 and the flow adjustment coefficient obtaining module 12, and is configured to generate an automatic adjustment signal for automatically adjusting the flow of the process reaction gas for forming the target structure on the current substrate based on the flow adjustment coefficient, the flow of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage.

In one embodiment, the process reactant gas flow for forming the target structure on the previous substrate comprises a process reactant gas flow for forming the epitaxial structure on the substrate. Measuring the warpage of the target structure formed on the previous substrate comprises testing the warpage of the epitaxial structure obtained by forming the epitaxial structure on the substrate.

Specifically, the epitaxial structure may include a buffer layer, and the flow rate of the process reaction gas for forming the epitaxial structure may be the flow rate of the process reaction gas used for forming the buffer layer. The process reactant gas may include, but is not limited to, nitrogen, gaseous gallium, or gaseous indium.

In a third aspect, the present application also provides a production system, as shown in fig. 11, including:

a process apparatus 100 for forming a target structure on each substrate and obtaining process parameters of forming the target structure on each substrate;

the measuring equipment 200 is connected with the process equipment and is used for measuring the target structure formed on each substrate and acquiring measurement data of the target structure formed on each substrate;

the process parameter tuning system 300 of any one of the embodiments described above is coupled to process equipment and metrology equipment.

In the above example, the production system includes the above-mentioned process parameter adjustment system 300, the adjustment coefficient is obtained by the first obtaining device 1, the process parameter of the previous substrate forming the target structure and the measurement data of the previous substrate forming the target structure are obtained by the second obtaining device 2, and the process parameter of the current substrate forming the target structure is automatically adjusted by the processing device 3 based on the adjustment coefficient, the process parameter of the previous substrate forming the target structure and the automatic adjustment signal of the measurement data, so that the process parameter of the current substrate forming the target structure can be adjusted in real time, and the problem of abnormal product and the like caused by long-time non-update of the parameter can be avoided; in addition, the processing device 3 automatically adjusts the process parameters of the process for forming the target structure on the current substrate, omits the operation of manually and regularly correcting parameters in a production workshop, effectively avoids the occurrence of artificial subjective judgment and human errors, can help to obtain more accurate process parameters, and improves the product yield and the enterprise competitiveness.

In one embodiment, a computer device is provided, which may be a terminal, and the internal structure thereof may be as shown in fig. 12. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, a mobile cellular network, NFC (near field communication) or other technologies. The computer program is executed by a processor to implement a process parameter adjustment method. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be keys, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.

It will be appreciated by those skilled in the art that the structure shown in fig. 12 is merely a block diagram of some of the structures associated with the present application and is not limiting of the computer device to which the present application may be applied, and that a particular computer device may include more or fewer components than shown, or may combine certain components, or have a different arrangement of components.

The application also provides a computer device comprising a memory and a processor, the memory storing a computer program, the processor implementing the steps of the process parameter adjustment method of any of the embodiments described above when executing the computer program.

In one embodiment, the processor when executing the computer program further performs the steps of:

acquiring an adjustment coefficient; acquiring process parameters of a process for forming a target structure on a previous substrate and measurement data of the target structure formed on the previous substrate; and automatically adjusting the process parameters of the current substrate for forming the target structure based on the adjustment coefficient, the process parameters of the previous substrate for forming the target structure and the measurement data.

Setting temperature reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the process temperature for forming the target structure on each substrate is the value of the process temperature for forming the target structure on the previous substrate plus the temperature reference coefficient; establishing a process temperature-measuring wavelength coordinate system by taking the process temperature of the target structure formed on each substrate as an abscissa and the measuring wavelength of the target structure formed on each substrate as an ordinate; and based on the process temperature of forming the target structure on each substrate and the measurement wavelength of the target structure formed on each substrate, fitting to obtain a fitting curve of the process temperature-measurement wavelength and the slope of the fitting curve of the process temperature-measurement wavelength, and determining the slope of the fitting curve of the process temperature-measurement wavelength as a temperature adjustment coefficient.

setting flow reference coefficients, and forming target structures on M substrates respectively, wherein M is a positive integer greater than 1 and less than N; wherein, the flow rate of the process reaction gas forming the target structure on each substrate is the value of the flow rate of the reaction gas forming the target structure on the previous substrate plus the flow reference coefficient; establishing a process reaction gas flow-measuring warp coordinate system by taking the process reaction gas flow of forming the target structure on each substrate as an abscissa and taking the measuring warp of the target structure formed on each substrate as an ordinate; fitting to obtain a fitting curve of the process reaction gas flow rate-the measured warpage and a slope of the fitting curve of the process reaction gas flow rate-the measured warpage based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage of the target structure formed on each substrate, and determining the slope of the fitting curve of the process reaction gas flow rate-the measured warpage as a flow adjustment coefficient.

The present application also provides a computer readable storage medium having stored thereon a computer program which, when executed by a processor, implements the steps of the process parameter adjustment method of any of the above embodiments.

In one embodiment, the computer program when executed by the processor further performs the steps of:

The present application also provides a computer program product comprising a computer program which, when executed by a processor, implements the steps of the process parameter adjustment method of any of the above embodiments.

Those skilled in the art will appreciate that implementing all or part of the above-described methods in accordance with the embodiments may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed may comprise the steps of the embodiments of the methods described above. Any reference to memory, database, or other medium used in the various embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, high density embedded nonvolatile Memory, resistive random access Memory (ReRAM), magnetic random access Memory (Magnetoresistive Random Access Memory, MRAM), ferroelectric Memory (Ferroelectric Random Access Memory, FRAM), phase change Memory (Phase Change Memory, PCM), graphene Memory, and the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory, and the like. By way of illustration, and not limitation, RAM can be in the form of a variety of forms, such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), and the like. The databases referred to in the various embodiments provided herein may include at least one of relational databases and non-relational databases. The non-relational database may include, but is not limited to, a blockchain-based distributed database, and the like. The processors referred to in the embodiments provided herein may be general purpose processors, central processing units, graphics processors, digital signal processors, programmable logic units, quantum computing-based data processing logic units, etc., without being limited thereto.

The technical features of the above embodiments may be arbitrarily combined, and for brevity, all of the possible combinations of the technical features of the above embodiments are not described, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims

1. A method for adjusting process parameters, comprising:

acquiring an adjustment coefficient;

2. The process parameter tuning method of claim 1, wherein the obtaining tuning coefficients comprises: acquiring a temperature adjustment coefficient;

3. The method of claim 2, wherein automatically adjusting the process temperature of the target structure on the current substrate based on the temperature adjustment factor, the process temperature of the target structure on the previous substrate, the measured wavelength of the target structure on the previous substrate, and the target wavelength comprises:

T _N ＝T _N-1 +K _N ×(WLD _N-1 -WLD ₀ )

4. A process parameter tuning method as defined in claim 3, wherein said obtaining a temperature tuning coefficient comprises:

5. The method of claim 2, wherein the process temperature for forming the target structure on the previous substrate comprises:

and forming an epitaxial structure on the substrate at a process temperature.

6. The process parameter adjustment method according to any one of claims 1 to 5, characterized in that the obtaining adjustment coefficients further comprises: acquiring a flow adjustment coefficient;

the process parameters also include process reaction gas flow; the measurement data comprise measurement warpage and target warpage;

the automatic adjustment of the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate and the measurement data comprises: and automatically adjusting the flow rate of the process reaction gas for forming the target structure on the current substrate based on the flow rate adjustment coefficient, the flow rate of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage.

7. The method of claim 6, wherein automatically adjusting the process reaction gas flow for forming the target structure on the current substrate based on the flow adjustment factor, the process reaction gas flow for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage comprises:

Flow _N ＝Flow _N-1 +α _N ×(Dev _N-1 -Dev ₀ )

wherein, flow is as follows _N The flow of process reaction gas for forming a target structure on the current substrate; flow (Flow) _N-1 The flow of process reactant gas for forming a target structure on a previous substrate; alpha _N Is a flow adjustment coefficient; dev _N-1 Measuring warpage for a target structure formed on a previous substrate; dev ₀ Is the target warpage; n is an integer greater than 1.

8. The process parameter tuning method of claim 7, wherein the obtaining a flow tuning factor comprises:

9. The method of claim 6, wherein the process gas flow for forming the target structure on the previous substrate comprises:

and forming an epitaxial structure on the substrate.

10. A process parameter adjustment system, comprising:

the first acquisition device is used for acquiring the adjustment coefficient;

11. The process parameter tuning system of claim 10, wherein the tuning coefficients comprise temperature tuning coefficients; the process parameters of forming the target structure on each substrate include the process temperature; the measurement data comprises a measurement wavelength and a target wavelength; the first acquisition device comprises a temperature adjustment coefficient acquisition module, wherein the temperature adjustment coefficient acquisition module is used for acquiring the temperature adjustment coefficient; the processing device comprises a first processing module, wherein the first processing module is connected with the second acquisition device and the temperature adjustment coefficient acquisition module and is used for generating an automatic adjustment signal for automatically adjusting the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate and the target wavelength.

12. The process parameter tuning system of claim 11, wherein the process temperature for forming the target structure on the previous substrate comprises a process temperature for forming an epitaxial structure on the substrate.

13. The process parameter tuning system of any one of claims 10-12, wherein the tuning coefficients further comprise an acquisition flow tuning coefficient, and wherein the process parameters for forming the target structure on each substrate further comprise a process reactant gas flow; the measurement data comprise measurement warpage and target warpage; the first acquisition device further comprises a flow adjustment coefficient acquisition module, wherein the flow adjustment coefficient acquisition module is used for acquiring the flow adjustment coefficient; the processing device comprises a second processing module, wherein the second processing module is connected with the second acquisition device and the flow adjustment coefficient acquisition module and is used for generating an automatic adjustment signal for automatically adjusting the flow of the process reaction gas for forming the target structure on the current substrate based on the flow adjustment coefficient, the flow of the process reaction gas for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate and the target warpage.

14. The system of claim 13, wherein the process gas flow for forming the target structure on the previous substrate comprises a process gas flow for forming an epitaxial structure on the substrate.

15. A production system, comprising:

the process parameter tuning system of any one of claims 10 to 14, coupled to the process tool and the metrology tool.

16. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any one of claims 1 to 9 when the computer program is executed.

17. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 9.

18. A computer program product comprising a computer program, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any one of claims 1 to 9.