CN117295353A - Ultra-thin ultra-flexible organic light emitting diode with submicron thickness, array and preparation method thereof - Google Patents
Ultra-thin ultra-flexible organic light emitting diode with submicron thickness, array and preparation method thereof Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses an ultra-thin ultra-flexible organic light emitting diode with submicron thickness, an array and a preparation method thereof. The ultrathin super-flexible organic light-emitting diode sequentially comprises an ultrathin photopolymer film, an anode, an active layer and a cathode from bottom to top; the ultrathin photopolymer film is made of light-cured glue, the light-cured glue is NOA63, NOA68, NOA65 or NOA73, and the thickness of the ultrathin photopolymer film is 450-500 nm. The device has ultrathin thickness and each component has excellent flexibility or elasticity, so the device and the device array have excellent flexibility and conformal bonding capability; the invention successfully integrates the solution method technology and the vacuum evaporation technology, can prepare high-precision and complex organic light emitting diodes and display arrays, realizes high integration level and is beneficial to industrial production.
Description
Technical Field
The invention relates to an ultra-thin ultra-flexible organic light emitting diode with submicron thickness, an array and a preparation method thereof, belonging to the field of organic electronics.
Background
The super-flexible electronic device has the characteristics of extremely light, extremely thin and extremely soft, can be in seamless fit with a curved surface of three-dimensional movement, and can be compatible with human skin and internal organs, so that the super-flexible electronic device has wide application prospect in the aspects of development of epidermis and implanted electronic devices. In recent years, some excellent super-flexible electronic devices have been developed such as organic thin film transistors, organic solar cells, organic photodetectors, and organic light emitting diodes. Among them, organic light emitting diodes are considered as one of the most potential candidates for emerging super flexible displays (Nature 2018,561,516;Sci.Adv.2020,6,eabb5898;Nat.Photonics 2013,7,811;Light:Sci.Appl.2019,8,114) because of their unique advantages of high flexibility, high contrast, and wide viewing angle, as a typical carrier for visual information transmission. Compared with flexible organic light emitting diodes, the realization of super flexible organic light emitting diodes can greatly promote the development of foldable electronic devices and skin electronic devices. In one aspect, the bending strain of a device at the same bending radius decreases as the thickness of the device decreases, according to the formula epsilon = d/2r (Small 2018,14,1801020), where epsilon is defined as the bending strain, d is defined as the device thickness, and r is defined as the bending radius. Therefore, the manufacturing of the ultra-thin and ultra-flexible organic light emitting diode can remarkably reduce the bending stress of the device, and is beneficial to realizing foldable electronic products. On the other hand, according to the formula m=ebh 3 12r (sci.sin.chim.2022, 52,1925), where M is defined as the bending moment, E is defined as the young's modulus, b is defined as the device width, h is defined as the device thickness, and r is defined as the bending radius. It can be seen that as the thickness of the device decreases, the bending moment of the device also decreases. Therefore, under the action of surface interaction force, the super-flexible device can be in common fit with an object with any shape, which is an urgent requirement for the development of skin electronics in the future.
However, developing ultra-thin super-flexible organic light emitting diodes of submicron thickness for high performance remains a significant challenge. Although there have been studies to realize flexible organic light emitting diodes, due to the thickness exceeding 90%Occupied by the substrate and therefore the thickness of these devices is up to a few microns or even thicker. Its main challenges are as follows: (1) high roughness problem of ultra-thin plastic substrates. When the thickness of the plastic substrate is reduced to submicron level, the roughness is generally greatly increased. However, since the deposition technique is conformal, the resulting upper film replicates the surface topography of the substrate, resulting in uneven and discontinuous growth of the subsequently deposited film and thus reduced electroluminescent performance of the device. In addition, these defects can also crack when the device is bent, resulting in a short circuit of the device. In order to reduce the roughness of ultra-thin plastic substrates, a smoothing layer is typically added to the substrate, but this inevitably increases the device thickness, making it difficult to reduce to submicron levels. (2) difficulty in peeling from the supporting layer. In order to be integrated with an industrial process, flexible devices typically need to be fabricated layer by layer on a rigid support layer and then peeled off to achieve flexibility. However, existing lift-off techniques, such as laser lift-off and mechanical lift-off, still have difficulty obtaining devices of submicron thickness (j.mate.chem.c 2014,2,2144;IEEE Photonic.Tech.L.2008,20,1836). Since laser lift-off strategies require the use of laser ablation to separate the device from the rigid support layer, the thinnest device thickness can only reach tens of microns to avoid laser damage during lift-off. In contrast, mechanical lift-off strategies can effectively reduce the device thickness to a few microns. The key to this strategy is to maintain a seamless bond between the ultra-thin substrate and the support layer during lamination and to ensure a non-destructive release between the two during release. However, a delicate tradeoff still needs to be made during lamination and release, as the adhesion between the ultra-thin substrate and the support layer is difficult to adjust accurately and controllably. Therefore, the thinnest super-flexible organic light emitting diode reported so far is only 2 μm, and its efficiency and brightness are only 0.23cd/A and 122cd/m 2 (Nat.Photonics 2013,7,811)。
Disclosure of Invention
The invention aims to provide an ultra-thin ultra-flexible organic diode with submicron thickness and a device array thereof, and the ultra-thin ultra-flexible organic diode can effectively regulate and control interface adhesion force in the lamination and stripping processes of device preparation through ultraviolet irradiation, so that the ultra-thin ultra-flexible organic light emitting diode with high performance can be transferred and prepared without damage. The preparation method provided by the invention avoids the damage to the organic functional layer and the electrode in the mechanical stripping process, and the prepared device can reduce the thickness to below 1 micron, has excellent conformal bonding capability, and simultaneously has excellent luminescence performance.
The ultra-thin super-flexible organic light-emitting diode with submicron thickness comprises an ultra-thin photopolymer film, an anode, an active layer and a cathode from bottom to top in sequence;
the ultrathin photopolymer film is made of photo-curing glue.
Wherein the photo-curing glue can be NOA63, NOA68, NOA65 or NOA73;
the thickness of the ultra-thin photopolymer film may be 450-500 nm.
Wherein the anode is a composite anode of PEDOT (PSS (poly (3, 4-ethylenedioxythiophene) -polystyrene sulfonic acid) and SWCNTs (single-walled carbon nanotubes);
the active layer is MoO 3 、TAPC、TCTa、TCTa:Ir(ppy) 3 、B3PYMPM:Ir(ppy) 3 A composite layer of B3PYMPM and Liq;
wherein TAPC is di- [4- (N, N-ditolylamino) -phenyl ] cyclohexan, TCTa is 4, 4' -Tri (9-carbazolyl) triphenylamine, ir (ppy) 3 is tris [2-phenyl ] iridium (III) (Ir (ppy) 3), B3PYMPM is Bis (3, 5-di-3-pyridylphenyl) -2-methyl pyrimide, and Liq is 8-Quinolinolato lithium.
The thickness of the anode is 20-30 nm;
the thickness of the active layer is 142nm, preferably MoO 3 The layer is 5nm, the TAPC layer is 50nm, the TCTa layer is 5nm, and TCTa:Ir (ppy) 3 The (10 wt%) layer was 10nm, B3PYMPM: ir (ppy) 3 10nm for the (10 wt%) layer, 60nm for the B3PYMPM layer and 2nm for the Liq layer;
the thickness of the cathode was 160nm.
The invention further provides a preparation method of the ultrathin super-flexible organic light-emitting diode, which comprises the following steps:
s1, preparing the anode on a substrate;
s2, spin-coating the photo-curing glue on the anode, and performing pre-curing treatment under ultraviolet irradiation to obtain the ultrathin photopolymer film;
s3, mechanically laminating an elastic supporting layer on the ultrathin photopolymer film;
s4, mechanically stripping to obtain a flexible anode with the elastic supporting layer;
s5, sequentially depositing the active layer and the cathode on the anode;
s6, separating the elastic supporting layer to obtain the ultrathin super-flexible organic light-emitting diode.
In the above preparation method, in step S1, the substrate is a silicon wafer carrier;
octadecyl trichlorosilane is modified on the substrate;
the octadecyl trichlorosilane is modified by adopting a liquid phase method, and the method comprises the following steps:
(1) Cleaning the substrate in acetone, isopropanol and deionized water in sequence, and then drying by adopting nitrogen;
(2) Hydroxylation treatment is carried out by oxygen plasma, and then the mixture is immersed into a hydrophobic octadecyl trichlorosilane solution for interfacial modification (volume ratio OTS: heptane=1:1000, immersion is carried out for 7 minutes);
and (3) soaking the OTS modified silicon wafer carrier obtained in the step (2) in chloroform, and performing ultrasonic treatment for 10 minutes to remove redundant OTS solution, so as to finally obtain the carrier with reduced surface adhesion.
In the above preparation method, in step S1, the anode is prepared by a solution method, which specifically includes the following steps:
take PEDOT: PSS composite anode as an example:
(1) PEDOT to PSS1000 stock solution was added (e.g., 6 vol%) with ethylene glycol to increase conductivity and added (e.g., 0.2 vol%) with a surface modifier (e.g., FS-30) to increase wettability;
(2) Spin-coating the PEDOT PSS solution prepared in the step (1) on an OTS modified carrier (such as 6000 rotation speed and 30 seconds), then annealing (such as 60 minutes) in a drying oven (100 ℃), and finally soaking (such as 3 minutes) in concentrated nitric acid to further increase the conductivity;
(3) The PEDOT: PSS film obtained in step (2) was placed on a heating stage (e.g., 150 ℃ C.) and an aqueous dispersion of SWCNTs (e.g., 0.15 mg/mL) was sprayed 20 times over it (e.g., 20 cm), followed by immersing in concentrated nitric acid (e.g., 3 minutes), and finally blow-dried with nitrogen gas.
In the above preparation method, in step S2, the pre-curing is performed in a 300W uv curing box;
the pre-curing time was 10s.
In the above preparation method, in step S3, the elastic supporting layer may be a polymethylsiloxane layer.
In the above preparation method, in step S4, the obtained photopolymer embedded anode with the elastic support layer is mechanically peeled off to get rid of the mechanical limitation of the rigid carrier, thereby obtaining the flexible anode with the elastic support layer.
In the above preparation method, in step S5, the deposition conditions are as follows: vacuum pressure of 2X 10 -4 pa～3×10 -4 pa, deposition rate of
In step S6, the method for separating the elastic supporting layer includes:
curing is performed under the ultraviolet light irradiation for 80s to reduce the adhesion.
On the basis of the ultra-thin ultra-flexible organic light-emitting diode with the submicron thickness, the invention further provides an ultra-thin ultra-flexible organic light-emitting diode array with the submicron thickness, which is formed by the ultra-thin ultra-flexible organic light-emitting diode with the submicron thickness.
The preparation method of the ultra-thin ultra-flexible organic diode with the submicron thickness is simple in process, and the ultra-thin ultra-flexible organic diode with the submicron thickness and the device array thereof are prepared by the light-control stripping technology; the problem of high roughness of industrial ultrathin plastic substrates is avoided, the limitation of the laser stripping technology on the thickness of the substrates is avoided, and the damage to the organic semiconductor and the electrode in the mechanical stripping process is eliminated; the device has ultrathin thickness and each component has excellent flexibility or elasticity, so that the device and the device array have excellent flexibility and conformal bonding capability; the invention successfully integrates the solution method technology and the vacuum evaporation technology, can prepare high-precision and complex organic light emitting diodes and display arrays, realizes high integration level and is beneficial to industrial production.
Drawings
FIG. 1 is a schematic diagram of a light-modulating ultra-thin superflexible organic light-emitting diode of submicron thickness.
FIG. 2 is a graph showing the change in adhesion of photopolymer films under different ultraviolet light exposures in example 1 of the present invention.
Fig. 3 is a current density (J) -voltage (V) -luminance (L) curve (fig. 3 (a)) and a luminance-Current Efficiency (CE) curve (3 (b)) of the super flexible organic light emitting diode prepared in example 1 of the present invention.
Fig. 4 is a photograph of the super flexible organic light emitting diode prepared in example 1 of the present invention attached to a finger.
Fig. 5 is a schematic diagram of an ultra-thin super-flexible organic light emitting diode array prepared in example 2 of the present invention.
Fig. 6 is a photograph of the super flexible array of example 2 of the present invention attached to the hand.
FIG. 7 is a spatial distribution diagram of current efficiency (FIG. 7 (a)) and power efficiency (7 (b)) of the super-flexible array prepared in example 2 of the present invention.
Detailed Description
The experimental methods used in the following examples are conventional methods unless otherwise specified.
Materials, reagents and the like used in the examples described below are commercially available unless otherwise specified.
Example 1 ultra-thin ultra-flexible organic light emitting diode with submicron thickness prepared by ultraviolet light regulation strategy
The preparation flow chart is shown in figure 1.
(1) The wafer carrier was rinsed in acetone, isopropanol and deionized water sequentially for 20 minutes, then dried with nitrogen and dried in a 130 ℃ desiccator for 15 minutes.
(2) The surface of a silicon wafer carrier adopting a liquid phase method is connected with octadecyltrichlorosilane: the silicon wafer carrier cleaned in the step (1) is subjected to hydroxylation treatment (100W, 3 minutes) by using oxygen plasma, and then is immersed into a hydrophobic Octadecyltrichlorosilane (OTS) solution for interfacial modification (volume ratio OTS: heptane=1:1000, immersion for 7 minutes).
(3) And (3) soaking the OTS modified silicon wafer carrier obtained in the step (2) in chloroform, and performing ultrasonic treatment for 10 minutes to remove the redundant OTS solution, thereby finally obtaining the silicon wafer carrier with reduced surface adhesion.
(4) The prepared PEDOT: PSS solution (6 vol% of ethylene glycol and 0.2vol% of surface modifier FS-30 were added) was spin-coated on the OTS modified silicon wafer carrier in step (3) (6000 rpm, 30 seconds), followed by annealing in a drying oven at 100℃for 60 minutes, and finally immersing in concentrated nitric acid for 3 minutes to further increase the conductivity.
(5) The PEDOT: PSS film obtained in the step (4) was placed on a heating stage at 150℃and an aqueous dispersion of SWCNTs (0.15 mg/mL) was sprayed 20 times over it at a distance of 20cm, followed by immersing in concentrated nitric acid for 3 minutes, and finally blow-dried with nitrogen gas.
(6) The viscous photopolymer NOA63 (9000 rpm, 40 seconds) was spin-coated on the composite anode obtained in step (5), followed by a pre-curing treatment by irradiation in a 300W uv curing box for 10 seconds.
(7) Mechanically laminating an elastic support layer PDMS on the pre-cured photopolymer film obtained in step (6).
(8) And (3) mechanically stripping the photopolymer embedded anode with the PDMS obtained in the step (7) to obtain the flexible anode taking the elastic PDMS as a supporting layer.
(9) Sequentially depositing an active layer comprising MoO on the anode obtained in step (8) 3 (10nm)、TAPC(50nm)、TCTa(10nm)、TCTa:Ir(ppy) 3 (10wt％,10nm)、B3PYMPM:Ir(ppy) 3 (10 wt%,10 nm), B3PYMPM (50 nm), liq (2 nm) and cathode Al (160 nm).
(10) And (3) placing the single device prepared in the step (9) into an ultraviolet curing box again for curing for 80 seconds to reduce the adhesion, and then separating the prepared device from the elastic supporting layer to obtain the ultra-thin and ultra-flexible organic light emitting diode with submicron thickness.
In the ultrathin and super-flexible organic light-emitting diode prepared in the embodiment, the thickness of the ultrathin photopolymer film is 473nm, the thickness of the anode is 28nm, the thickness of the active layer is 142nm, and the thickness of the cathode is 160nm.
FIG. 2 is a graph showing the change in adhesion of photopolymer film under different UV light exposures in step (10), and it can be seen that the adhesion gradually decreases from 16.9N/m to 5.1N/m over 80 seconds as the UV light exposure time increases.
FIG. 3 is a graph of current density (J) -voltage (V) -luminance (L) (FIG. 3 (a)) and luminance-Current Efficiency (CE) (3 (b)) of the super-flexible organic light-emitting diode prepared according to this example, and it can be seen that the maximum luminance of the device is 8649cd/m 2 The current efficiency was 56.8cd/A.
Fig. 4 is a photograph of the super flexible organic light emitting diode prepared in this example attached to a finger, and it can be seen that the device is thin, exhibiting excellent super flexibility and attachment.
Example 2 preparation of ultra thin super flexible organic light emitting diode array
(1) The wafer carrier was rinsed in acetone, isopropanol and deionized water sequentially for 20 minutes, then dried with nitrogen and dried in a 130 ℃ desiccator for 15 minutes.
(2) The surface of a silicon wafer carrier adopting a liquid phase method is connected with octadecyltrichlorosilane: the silicon wafer carrier cleaned in the step (1) is subjected to hydroxylation treatment (100W, 3 minutes) by using oxygen plasma, and then is immersed into a hydrophobic Octadecyltrichlorosilane (OTS) solution for interfacial modification (volume ratio OTS: heptane=1:1000, immersion for 7 minutes).
(3) And (3) soaking the OTS modified silicon wafer carrier obtained in the step (2) in chloroform, and performing ultrasonic treatment for 10 minutes to remove the redundant OTS solution, thereby finally obtaining the silicon wafer carrier with reduced surface adhesion.
(4) The prepared PEDOT: PSS solution (6 vol% of ethylene glycol and 0.2vol% of surface modifier FS-30 were added) was spin-coated on the OTS modified silicon wafer carrier in step (3) (6000 rpm, 30 seconds), followed by annealing in a drying oven at 100℃for 60 minutes, and finally immersing in concentrated nitric acid for 3 minutes to further increase the conductivity.
(5) The PEDOT: PSS film obtained in the step (4) was placed on a heating stage at 150℃and an aqueous dispersion of SWCNTs (0.15 mg/mL) was sprayed 20 times over it at a distance of 20cm, followed by immersing in concentrated nitric acid for 3 minutes, and finally blow-dried with nitrogen gas.
(6) And (3) attaching the anode obtained in the step (5) on a fine mask plate, and treating with oxygen plasma (100W, 3 min) to obtain the patterned anode.
(7) The photopolymer (9000 rpm, 40 seconds) was spin-coated on the patterned anode obtained in step (6), followed by a pre-curing treatment by irradiation in a 300W uv curing box for 10s.
(8) Mechanically laminating an elastic supporting layer PDMS on the patterned anode embedded in the pre-cured photo-polymerization film obtained in the step (7), and then mechanically stripping to obtain the patterned anode taking the elastic PDMS as a supporting layer.
(9) And (3) mechanically stripping the photopolymer embedded anode with the PDMS obtained in the step (8) to obtain the flexible anode taking the elastic PDMS as a supporting layer.
(10) Placing the patterned anode obtained in the step (9) on a fine mask plate at a temperature of 2×10 -4 Sequentially under Pa vacuum degreeComprises +.> And a cathode
(11) And (3) placing the device array prepared in the step (10) into an ultraviolet curing box again for curing for 80 seconds to reduce the adhesion force, and then separating the prepared device from the elastic supporting layer to obtain the ultra-thin and ultra-flexible organic light emitting diode array with 25 multiplied by 28 pixels.
Fig. 5 is a schematic view of an ultra-thin super-flexible organic light emitting diode array prepared in this example.
Fig. 6 is a photograph of the super flexible array of the present embodiment attached to the hand, wherein the 25×28 array has 700 sub-pixels.
FIG. 7 is a spatial distribution of current efficiency (FIG. 7 (a)) and power efficiency (7 (b)) for the super-flexible array prepared in this example, the pixel array exhibited uniform electroluminescent performance and relatively high current efficiency values, the highest current efficiency value for the sub-pixels was as high as 61.2cd/A, the average value was 55.4cd/A, and the power efficiency values for all sub-pixels were higher than 50lm/W, meeting the requirements of at least 40lm/W in commercial applications.
Claims (10)
1. An ultrathin super-flexible organic light-emitting diode with submicron thickness comprises an ultrathin photopolymer film, an anode, an active layer and a cathode from bottom to top in sequence;
the ultrathin photopolymer film is made of photo-curing glue.
2. The ultra-thin super-flexible organic light emitting diode of claim 1, wherein: the light-cured glue is NOA63, NOA68, NOA65 or NOA73;
the thickness of the ultrathin photopolymer film is 450-500 nm.
3. The ultra-thin super-flexible organic light emitting diode according to claim 1 or 2, wherein: the anode is a composite anode of PEDOT, PSS and SWCNTs;
the active layer is MoO 3 、TAPC、TCTa、TCTa:Ir(ppy) 3 、B3PYMPM:Ir(ppy) 3 A composite layer of B3PYMPM and Liq;
the cathode is made of Al;
the thickness of the anode is 20-30 nm;
the thickness of the active layer is 142nm;
the thickness of the cathode was 160nm.
4. A method for manufacturing an ultra-thin super-flexible organic light emitting diode as claimed in any one of claims 1 to 3, comprising the steps of:
s1, preparing the anode on a substrate;
s2, spin-coating the photo-curing glue on the anode, and performing pre-curing treatment under ultraviolet irradiation to obtain the ultrathin photopolymer film;
s3, mechanically laminating an elastic supporting layer on the ultrathin photopolymer film;
s4, mechanically stripping to obtain a flexible anode with the elastic supporting layer;
s5, sequentially depositing the active layer and the cathode on the anode;
s6, separating the elastic supporting layer to obtain the ultrathin super-flexible organic light-emitting diode.
5. The method of manufacturing according to claim 4, wherein: in the step S1, the substrate is a silicon wafer carrier;
the substrate is modified with octadecyl trichlorosilane.
6. The method of manufacturing according to claim 5, wherein: the octadecyl trichlorosilane is modified by adopting a liquid phase method, and the method comprises the following steps:
(1) Cleaning the substrate in acetone, isopropanol and deionized water in sequence, and then drying by adopting nitrogen;
(2) Hydroxylation treatment is carried out by oxygen plasma, and then the substrate is immersed in a hydrophobic octadecyl trichlorosilane solution for interfacial modification.
7. The production method according to any one of claims 4 to 6, characterized in that: in step S1, the anode is prepared by a solution method.
8. The production method according to any one of claims 4 to 7, characterized in that: in step S2, the pre-curing is performed in a 300W ultraviolet curing box;
the pre-curing time was 10s.
9. The preparation method according to any one of claims 4 to 8, characterized in that: in step S3, the elastic supporting layer is a polymethylsiloxane layer;
in step S5, the deposition conditions are as follows: vacuum pressure of 2X 10 -4 pa～3×10 -4 pa, deposition rate of
In step S6, the method for separating the elastic supporting layer includes:
curing under the ultraviolet light irradiation for 80s.
10. A submicron-thickness ultra-thin, ultra-flexible organic light emitting diode array formed from the submicron-thickness ultra-thin, ultra-flexible organic light emitting diode of any one of claims 1-3.
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