CN117293655A - Single transverse mode high-power semiconductor laser - Google Patents
Single transverse mode high-power semiconductor laser Download PDFInfo
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- CN117293655A CN117293655A CN202310888328.0A CN202310888328A CN117293655A CN 117293655 A CN117293655 A CN 117293655A CN 202310888328 A CN202310888328 A CN 202310888328A CN 117293655 A CN117293655 A CN 117293655A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 230000007704 transition Effects 0.000 claims description 6
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- 230000007017 scission Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 11
- 229920006395 saturated elastomer Polymers 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 80
- 238000002834 transmittance Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000002310 reflectometry Methods 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 238000004088 simulation Methods 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
- H01S5/0653—Mode suppression, e.g. specific multimode
- H01S5/0655—Single transverse or lateral mode emission
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- Semiconductor Lasers (AREA)
Abstract
The invention relates to a single transverse mode high-power semiconductor laser, which relates to the technical field of semiconductor lasers. The device comprises a substrate, a lower waveguide cover layer, an active layer, an upper waveguide cover layer and an ohmic contact layer; the substrate, the lower waveguide cover layer, the active layer, the upper waveguide cover layer and the ohmic contact layer are sequentially arranged from bottom to top, and electrodes are arranged below the substrate and above the ohmic contact layer; the upper waveguide cover layer is P-type doped, the lower waveguide cover layer is N-type doped, and the upper waveguide cover layer, the active layer and the lower waveguide cover layer jointly form a P-I-N structure; the upper waveguide cover layer comprises an upper limiting layer, a grating layer and a cover layer which are sequentially arranged from bottom to top; the cover layer is made into a ridge waveguide structure, and a pre-deposited isolation layer is arranged between the side surface of the ridge waveguide, the non-ridge waveguide area and the electrode. The semiconductor laser provided by the invention can realize single transverse mode operation under wide waveguide, thereby increasing the volume of the resonant cavity and obtaining higher laser saturated output power and optical catastrophe damage threshold.
Description
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a single transverse mode high-power semiconductor laser.
Background
The semiconductor laser has the characteristics of compact structure, high photoelectric efficiency and stable wavelength, and is widely applied to the fields of optical communication, sensing and the like. The higher saturated output power is beneficial to further popularization and application. However, as the photon density of the active region increases, the gain of the laser becomes increasingly saturated, thereby limiting further increases in output power. Various typical schemes have been proposed to further increase the output power of the laser while ensuring single mode, all of which are aimed at reducing the photon density of the active layer. A diluted waveguide epitaxial structure is adopted, and thicker InP and InGaAsP layers alternately grown are pre-buried below an active layer of a laser, so that the optical confinement factor in a quantum well of the laser is effectively reduced on the premise that the thermal resistance of the laser is not greatly affected, the photon density is reduced, and the output power is improved (FaugeronM, tranM, parillaudO, et. High-powertunabledilute modeDFBlaserwithlowRINandnarrowlinewidth [ J ] IEEEphotonics technologyletters,2012,25 (1): 7-10.). The scheme does not further optimize the transverse mode confinement of the laser, and the laser waveguide width based on the ridge waveguide structure finally shows 3.5 μm, and realizes the work of low Relative Intensity Noise (RIN) and high saturated output power, wherein RIN is lower than-160 dB/Hz, and the saturated output power is higher than 175mW. The further scheme of using buried waveguide can raise injection efficiency and increase heat dissipation of laser (YokokawaS, nakamuraA, hamadaS, etal.HighPower, circularBeamCWDFBLaserusing BEXLyer [ C ]// EuropeanConferenceandExhibitiononOpticalCommunication.OpticaPublishingGroup, 2022:Tu3E.2.). After etching the active layer and manufacturing the grating, the scheme respectively grows p-type InP and semi-insulating InP to form a buried heterojunction structure to replace the ridge waveguide structure. The scheme can simultaneously realize the transverse limitation of the mode field of the resonant cavity and the injection current, thereby improving the injection efficiency and optimizing far-field light spots. In addition, as the heat conductivity coefficient of the InP material is higher than that of air, the structure can effectively improve the heat dissipation of the laser, thereby further improving the saturated output power of the laser. This approach has achieved that while the laser divergence angle is below 20 deg., the laser output power is greater than 150mW at 400mA current at room temperature.
The above schemes all have the characteristic of adopting a thick passive waveguide layer to reduce the photon density of an active layer so as to improve the saturation output power of the laser, but the further improvement of the power is still limited by the waveguide width. The simple widening of the waveguide width can reduce the photon density of the output end face and improve the saturated output power, but the limitation of the waveguide width to the optical field in the lateral direction is weakened, so that the high-order transverse mode of the laser is easy to excite, the single-mode characteristic of the laser is reduced, and the application of the device is limited. The single transverse mode operation under the wide waveguide can be realized by the specially designed waveguide structure. The typical scheme is a slab waveguide coupling scheme. According to the scheme, narrow grooves are etched on two sides of the waveguide, and the width and the depth of the narrow grooves are accurately controlled to increase the loss of a high-order transverse mode of the laser, so that single transverse mode operation is realized. In recent years, this approach has reported stable single transverse mode continuous wave operation at room temperature of greater than 700mW (MaoY, chengY, xuB, et al record-highpower1.55- μmdistributed feedbacklaserdiodesforopticalcommunication [ C ]// optical fiber communication Conference.OpticaPublishingGroup, 2021:W1B.7.). But in the scheme, the groove widths at two sides of the laser are required to be accurately controlled, so that the yield of the device is reduced, and the manufacturing cost of the laser is increased.
Therefore, how to provide a single transverse mode high power semiconductor laser is an urgent technical problem to be solved by those skilled in the art.
Disclosure of Invention
The invention mainly aims to provide a single transverse mode high-power semiconductor laser to realize stable operation of a single transverse mode under a wide waveguide, so that single mode output power of the laser is further improved to popularize and apply the laser.
To achieve the above object, the present invention provides a single transverse mode high power semiconductor laser comprising: the device comprises a substrate, a lower waveguide cover layer, an active layer, an upper waveguide cover layer and an ohmic contact layer; the substrate, the lower waveguide cover layer, the active layer, the upper waveguide cover layer and the ohmic contact layer are sequentially arranged from bottom to top, and electrodes are arranged below the substrate and above the ohmic contact layer; the upper waveguide cover layer is P-type doped, the lower waveguide cover layer is N-type doped, and the upper waveguide cover layer, the active layer and the lower waveguide cover layer jointly form a P-I-N structure.
Further, the laser is longitudinally divided into a front feedback region, a multimode waveguide transverse mode selection region and a rear feedback region; the front feedback area and the back feedback area adopt multi-transverse mode waveguide structures with the same or different widths, the multi-mode waveguide transverse mode selection area adopts multi-mode waveguides, and the width of the multi-mode waveguide transverse mode selection area is wider than that of the front feedback area and the back feedback area.
Further, the multimode waveguide transverse mode selection region consists of a transition tapered waveguide and a multimode interference region.
Furthermore, the front feedback area adopts Bragg grating to provide feedback, the end face of the front feedback area adopts a high-permeability film or a natural cleavage surface, and the rear feedback area adopts a high-reflection film.
Further, the upper waveguide cover layer comprises an upper limiting layer, a grating layer and a cover layer which are sequentially arranged from bottom to top, and the p-type doping concentration is gradually increased.
Furthermore, the cover layer is provided with a ridge waveguide structure, and a pre-deposited isolation layer is arranged between the side surface of the ridge waveguide, the non-ridge waveguide area and the electrode.
Further, the lower waveguide cover layer comprises a lower limiting layer and an passive waveguide layer which are sequentially arranged from top to bottom, and the n-type doping concentration is gradually increased.
The invention has the beneficial effects that:
the semiconductor laser provided by the invention can realize single transverse mode operation under wide waveguide, thereby increasing the volume of the resonant cavity and obtaining higher laser saturated output power and optical catastrophe damage threshold; so as to realize the stable operation of the single transverse mode under the wide waveguide, thereby further improving the single-mode output power of the laser and popularizing the application thereof.
Drawings
Fig. 1 is a top view of a laser of the present invention.
Fig. 2 is a schematic cross-sectional view of a laser of the present invention.
Fig. 3 is a schematic longitudinal section of the laser of the present invention.
Fig. 4 is a graph of the optical field profile for each order transverse mode of the laser.
FIG. 5 is a graph showing the transmittance of the multimode waveguide transverse mode selection region versus the length of the MMI region for TE0, TE1 and TE2 modes according to the present invention.
Fig. 6 is a graph showing the lateral shift of the position of the incident waveguide of the laser MMI according to the present invention as a function of the transmittance of different modes.
FIG. 7 is a graph of threshold gain versus lateral offset of MMI incident waveguide position for the TE0 and TE2 modes of the laser of the present invention.
FIG. 8 is a graph showing the variation of the input current and the output optical power of the laser according to the present invention.
Wherein, in the figure:
1-a substrate; 2-an passive waveguide layer; 3-a lower confinement layer; 4-an active layer; 5-an upper confinement layer; 6-grating layer; 7-cap layer; an 8-ohmic contact layer; 9-electrode; 10-isolating layer; 11-high permeability membrane; 12-high reflection film; 13-a feed-forward region; 14-transition tapered waveguides; 15-multimode interference region; 16-multimode waveguide transverse mode selection region; 17-post feedback zone.
Detailed Description
In order to achieve the above objects and effects, the present invention adopts the technical means and structure, and the features and functions of the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
As shown in fig. 1 to 3, the present invention provides a single transverse mode high power semiconductor laser comprising: a substrate 1, a lower waveguide cap layer, an active layer 4, an upper waveguide cap layer and an ohmic contact layer 8; the substrate 1, the lower waveguide cover layer, the active layer 4, the upper waveguide cover layer and the ohmic contact layer 8 are sequentially arranged from bottom to top, and electrodes 9 are arranged below the substrate 1 and above the ohmic contact layer 8; the upper waveguide cover layer is P-type doped, the lower waveguide cover layer is N-type doped, and the upper waveguide cover layer, the active layer 4 and the lower waveguide cover layer jointly form a P-I-N structure. The active layer 4 employs strained multi-layer or single-layer quantum wells or quantum dots to provide gain, the active layer 4 being undoped. The substrate 1 is n-doped InP. The ohmic contact layer 8 is made of high p-type doped material, contact metal is manufactured above the ohmic contact layer 8, and thick gold can be evaporated to strengthen heat dissipation of the laser. The ohmic contact layer 8 is heavily doped p-type to provide sufficient carriers and reduce ohmic contact resistance. The lateral, transverse and longitudinal directions of the laser in fig. 1 are denoted as x, y and z directions, respectively, and all schematic diagrams are marked with the same spatial coordinate system.
In this embodiment, the laser is longitudinally divided into a front feedback region 13, a multimode waveguide transverse mode selection region 16 and a rear feedback region 17; the front feedback region 13 and the rear feedback region 17 adopt multi-transverse-mode waveguide structures with the same or different widths, and the multi-mode waveguide transverse-mode selection region 16 adopts multi-mode waveguides with the widths wider than the waveguide widths of the front feedback region 13 and the rear feedback region 17. The multimode waveguide transverse mode selection area 16 adopts a multimode waveguide interference structure to realize the filtering effect on the high-order transverse modes, and the active layer 4 of the multimode waveguide transverse mode selection area 16 is etched and removed before secondary epitaxy, so as to reduce loss.
In this embodiment, the multimode waveguide transverse mode selection region 16 is composed of a transition tapered waveguide 14 and a multimode interference region 15.
In this embodiment, the front feedback region 13 uses bragg gratings to provide feedback, the end face of the front feedback region 13 uses a high-transmittance film 11 or a natural cleavage plane, and the rear feedback region 17 uses a high-reflectance film 12. The length and width of the multimode waveguide transverse mode selection region 16 varies with the waveguide width of the front and rear feedback regions 17. The light-emitting end face of the laser is the end face of the front feedback area 13; the multimode waveguide transverse mode selection region 16 filters the high-order transverse modes of the front feedback region 13 and the rear feedback region 17 by controlling the length and retains the basic transverse mode, and the active layer 4 of the multimode waveguide transverse mode selection region 16 is etched and removed before secondary epitaxy, so as to reduce loss. The Bragg grating has a relatively low coupling coefficient, about 10cm -1 To reduce the space hole burning effect; the equivalent reflectivities of the front and rear feedback regions 17 are close to provide sufficient threshold mode gain difference between the fundamental transverse mode and the higher order transverse mode; the Bragg grating adopts a phase shift grating structure, so that the single-mode characteristic of the laser is ensured.
In this embodiment, the upper waveguide cover layer includes an upper confinement layer 5, a grating layer 6, and a cover layer 7,p type doping concentration gradually increasing from bottom to top.
In this embodiment, the cover layer 7 is made of a ridge waveguide structure, and a pre-deposited isolation layer 10 is disposed between the side of the ridge waveguide, the non-ridge waveguide region and the electrode 9.
In this embodiment, the lower waveguide cover layer includes a lower confinement layer 3 and a passive waveguide layer 2 sequentially disposed from top to bottom, where the n-type doping concentration gradually increases. The thickness of the passive waveguide layer 2 is typically 100nm to 1 μm.
The semiconductor laser provided by the invention can realize single transverse mode operation under wide waveguide, thereby increasing the volume of the resonant cavity and obtaining higher laser saturated output power and optical catastrophe damage threshold; so as to realize the stable operation of the single transverse mode under the wide waveguide, thereby further improving the single-mode output power of the laser and popularizing the application thereof.
Fig. 2 is a schematic cross-sectional view of a laser according to this embodiment of the invention. To achieve both current and optical field confinement, the cap layer 7 of the laser is fabricated with a ridge waveguide structure. In order to prevent current leakage and reduce absorption losses of the metal electrode, there is a pre-deposited isolation layer 10 between the ridge waveguide side, the non-ridge waveguide region and the electrode 9, wherein the isolation layer 10 is typically thicker than 200nm. The structure of the laser is designed for more visual presentation. After the ridge waveguide structure is manufactured, the isolation layer 10 above the ohmic contact layer 8 is removed to be in contact with the deposited electrode 9, and meanwhile, isolation of the isolation layer 10 between other upper surfaces and the electrode 9 is ensured, so that current injection is limited. Fig. 3 is a longitudinal cross-sectional view and a laser according to this embodiment of the invention. The front end face and the back end face of the laser are respectively plated with a high-permeability film 11 and a high-reflectivity film 12, and are longitudinally divided into a front feedback area 13, a multimode waveguide transverse mode selection area 16 and a back feedback area 17. The multimode waveguide transverse mode selection region consists of a transition tapered waveguide 14 and a multimode interference region 15. The front feedback region 13 has a waveguide width W1 and a length L1, the multimode interference region 15 has a waveguide width W2 and a length L2, and the rear feedback region has a waveguide width W3 and a length L3. The front feedback region comprises the above-described layer structures, and the multimode waveguide transverse mode selection region and the lower confinement layer 3, active layer 4, upper confinement layer 5 and grating layer 6 of the back feedback are removed to reduce waveguide loss. And a Bragg grating is manufactured on the grating area of the front feedback area. The product of the coupling coefficient of the grating of the front feedback area and L1 is about 1, so that the photon density distribution in the cavity is more uniform, and the space hole burning effect is reduced.
FIG. 4 is a graph showing the optical field distribution of the laser's transverse modes at each order for a ridge waveguide of 8 μm width for this embodiment of the invention. Wherein fig. 4A is a fundamental transverse electric mode (TE 0), fig. 4B is a first-order transverse electric mode (TE 1), and fig. 4C is a second-order transverse electric mode (TE 2).
FIG. 5 is a graph showing the transmittance of the multimode waveguide transverse mode selection region for TE0, TE1 and TE2 modes as a function of the MMI region length for this embodiment of the invention with the length of the lateral tapered waveguide region set to 80 μm. From the figure, it can be derived that the self-imaging lengths of the different modes are different. Wherein when the length of the MMI is around 220 μm, self-imaging of TE0 mode, i.e. high transmittance transmission, can be achieved; meanwhile, the transmittance of the waveguide structure to TE1 mode is lower than 0.1.
FIG. 6 is a graph showing the relationship between the lateral shift of the MMI incident waveguide position and the transmittance of different modes under the condition that the length of the MMI region is fixed to 220 μm and the transition length of the lateral tapered waveguide is fixed to 80 μm. Along with the increase of the lateral offset of the waveguide, the transmittance of the transverse mode selection area of the multimode waveguide to the TE2 mode is obviously reduced, and meanwhile, certain loss is also generated in the TE0 mode. When the lateral offset of the incident waveguide of the laser MMI is larger than 0.4 mu m, the MMI has good filtering effect on TE2 modes.
FIG. 7 is a graph showing the relationship between the threshold gain of TE0 and TE2 modes and the lateral offset of the MMI incident waveguide position, for a laser of this embodiment of the present invention, with the MMI region length fixed at 220 μm and the lateral taper waveguide transition length fixed at 80 μm. When the lateral offset is greater than 0.4 μm, the difference in threshold gain of the TE0 mode and TE2 mode of the laser is already greater than 5cm -1 This will effectively guarantee the single transverse mode operating characteristic of the laser, thus realizing the single mode output of high power continuous wave under wide waveguide.
Fig. 8 is a graph showing the variation of the input current versus the output optical power of the laser according to this embodiment of the invention. The threshold current of the laser was about 95mA, with a slope greater than 0.38mW/mA, and its theoretical output power at an injection current of 1A was close to 350mW. Theoretical simulations of the above scheme prove that the scheme can realize stable operation of a single longitudinal mode under a waveguide with the width of 8 μm, and the output power of the laser can be close to 350mW when the injection current is 1A.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above embodiments according to the technical principles of the present invention still fall within the scope of the technical solutions of the present invention.
Claims (5)
1. A single transverse mode high power semiconductor laser, comprising: the device comprises a substrate, a lower waveguide cover layer, an active layer, an upper waveguide cover layer and an ohmic contact layer; the substrate, the lower waveguide cover layer, the active layer, the upper waveguide cover layer and the ohmic contact layer are sequentially arranged from bottom to top, and electrodes are arranged below the substrate and above the ohmic contact layer; the upper waveguide cover layer is doped with P type, the lower waveguide cover layer is doped with N type, and the upper waveguide cover layer, the active layer and the lower waveguide cover layer together form a P-I-N structure;
the upper waveguide cover layer comprises an upper limiting layer, a grating layer and a cover layer which are sequentially arranged from bottom to top, and the p-type doping concentration is gradually increased; the cover layer is provided with a ridge waveguide structure, and a pre-deposited isolation layer is arranged between the side surface of the ridge waveguide, the non-ridge waveguide area and the electrode.
2. A single transverse mode high power semiconductor laser as claimed in claim 1 wherein the laser is longitudinally divided into a front feedback region, a multimode waveguide transverse mode selection region and a rear feedback region; the front feedback area and the back feedback area adopt multi-transverse mode waveguide structures with the same or different widths, the multi-mode waveguide transverse mode selection area adopts multi-mode waveguides, and the width of the multi-mode waveguide transverse mode selection area is wider than that of the front feedback area and the back feedback area.
3. A single transverse mode high power semiconductor laser as claimed in claim 2 wherein said multimode waveguide transverse mode selection region is comprised of a transition tapered waveguide and a multimode interference region.
4. A single transverse mode high power semiconductor laser as claimed in claim 2 wherein the front feedback region employs bragg gratings to provide feedback, the front facet of the front feedback region employs a high transmission film or natural cleavage plane, and the back feedback region employs a high reflection film.
5. A single transverse mode high power semiconductor laser as claimed in claim 1 wherein said lower waveguide cap layer comprises a lower confinement layer, an passive waveguide layer, and an n-type dopant concentration gradually increasing, disposed in sequence from top to bottom.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310888328.0A CN117293655A (en) | 2023-07-19 | 2023-07-19 | Single transverse mode high-power semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310888328.0A CN117293655A (en) | 2023-07-19 | 2023-07-19 | Single transverse mode high-power semiconductor laser |
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| CN117293655A true CN117293655A (en) | 2023-12-26 |
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| CN202310888328.0A Pending CN117293655A (en) | 2023-07-19 | 2023-07-19 | Single transverse mode high-power semiconductor laser |
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