CN117288246A - Multi-quadrant detector correction detection method and system based on hot electron effect - Google Patents
Multi-quadrant detector correction detection method and system based on hot electron effect Download PDFInfo
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Abstract
The invention provides a multi-quadrant detector correction detection method and system based on a hot electron effect, comprising the following steps: the correction signal acquisition unit is used for measuring response voltages of different quadrant chips of the multi-quadrant detector under different light source output light powers and under a standard blackbody; the correction calculation unit is used for calculating correction parameters of different quadrant chips of the multi-quadrant detector according to response voltages acquired under different conditions and writing the correction parameters into the corresponding signal amplifier; the qualification judging unit is used for judging whether the calculated voltage dividing resistance proportion and the dark voltage at different temperatures accord with a preset threshold value or not; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified. The invention effectively solves the problem that the performance parameters of each quadrant chip have certain difference due to the limitation of the manufacturing process by correcting the response voltage value of each quadrant chip and the dark voltage at different temperatures.
Description
Technical Field
The invention relates to the field of detectors, in particular to a multi-quadrant detector correction detection method and system based on a hot electron effect.
Background
Along with the development of scientific technology, the multi-quadrant photoelectric detector is widely applied in the aspects of searching, tracking, measuring, earth resource investigation, temperature measurement, forest fire prevention, early warning and the like, and the multi-quadrant photoelectric detector is used as a core detection device, so that the spectrum coverage range and the performance consistency of the multi-quadrant photoelectric detector are very important.
However, in the currently commercial multi-quadrant photoelectric detectors, such as four-quadrant and eight-quadrant photoelectric detectors, the base materials are all semiconductor silicon or InGaAs materials or pyroelectric materials, and the spectral response range of silicon is 0.38-1.1um; the spectrum response range of the InGaAs is 0.9-1.7um, and the spectrum coverage range of the InGaAs greatly limits the application range of the InGaAs; the spectrum response range of the pyroelectric material is different from material to material, the spectrum response of a single material is narrow, the response is slow, and the application of the pyroelectric material is mainly concentrated on occasions such as temperature measurement, forest fire prevention and the like.
In addition, due to the limitation of the manufacturing process, the minimum detectable power, the saturation detection power, the dark voltage/current and other performance parameters of each quadrant chip have certain differences, and each quadrant chip of the multi-quadrant photoelectric detector needs to be corrected when leaving the factory, so that larger errors and even erroneous results are avoided when detection or algorithm processing is conducted. Chinese patent publication CN102507148A discloses a multi-quadrant photoelectric detector detection system, wherein a complex optical imaging system is used for detecting the consistency of parameters such as optical power and the like of each quadrant at different rotating speeds and a reference unit, the system is too complex, and the consistency indexes of saturated detection power and dark voltage/current are not checked; chinese patent publication CN112113671A discloses a quality detection method and device for an infrared detector, which adopts a black body to replace a traditional shielding method to detect the infrared radiation difference value of the multi-quadrant infrared detector and corrects the infrared radiation difference value through segmented fitting.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a multi-quadrant detector correction detection method and system based on a hot electron effect.
In order to achieve the above purpose, the present invention provides the following technical solutions: a multi-quadrant detector correction detection method based on a hot electron effect comprises the following steps:
s1, utilizing a light source with a specific wavelength range corresponding to saturated light power of a chip with a thermal electron effect to irradiate each quadrant chip of a multi-quadrant detector based on the thermal electron effect, and adjusting the proportion of voltage dividing resistors corresponding to each quadrant chipThe response voltages are all adjusted to the average voltage corresponding to the saturated light power +.>I.e.
，
Wherein N is the number of quadrants of the multi-quadrant detector,the saturation power voltage value detected for the ith quadrant chip;
s2, placing the multi-quadrant detector in a constant temperature environment with adjustable temperature, aligning to a standard blackbody, and collecting dark voltages of each quadrant chip at different temperatures，/>Dark voltage for the i-th quadrant chip;
s3, based on the incident light intensity of each quadrant chipAnd response voltage relation, namely, response voltage which is acquired by irradiating each quadrant chip of the multi-quadrant detector through a light source with unsaturated light power with specific wavelength>Calculating corresponding correction coefficient->The following formula is shown:
，
s4, each quadrant chip of the multi-quadrant detector is provided with an independent signal amplifier for calibrating the deviation value between different photoelectric detection chips and the reference chip; according to response voltages acquired under different conditions, calculating correction parameters of different quadrant chips of the multi-quadrant detector, and writing the correction parameters into corresponding signal amplifiers;
s5, according to the calculated voltage dividing resistance proportionAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified.
Furthermore, the multi-quadrant detector based on the hot electron effect adopts a semiconductor film material with strong electron interaction and weak electron and phonon interaction, the spectral response covers visible light to mid-infrared light, and the responsivity is below 500ns.
Furthermore, each quadrant chip of the multi-quadrant detector based on the hot electron effect adopts an asymmetric semiconductor film, and the number N of quadrants of the multi-quadrant detector is more than or equal to 4.
Further, the multi-quadrant detector based on the hot electron effect has induced voltage and asymmetric characteristic angle of the thin filmThe following are related:
，
wherein x and y are the positions of the light spots,、/>is the electrode position; />Seebeck coefficient for hole; gamma is +.>Is a divergent relationship correlation factor of (a); />Is the intensity of the incident light; />Is the reflectivity of the film; d is the film thickness; />Is film absorptivity; />Is the beam spot radius.
Further, the dark voltage at different temperatures in step S2 is related to the temperature T as follows:
，
wherein A, B is the temperature compensation coefficient.
Further, in the step S2, the constant temperature environment is a darkroom, and the distance between the standard blackbody and the multi-quadrant detector is controlled within 5 cm.
Further, in step S3, the incident light intensity of each quadrant chipThe response voltage relation is obtained by adjusting the incident power of the light source and collecting response voltages on different chips through simulationThe function with the greatest correlation is determined as the incident light intensity +.>And a response voltage relationship function.
Further, the voltage dividing resistance ratioThe threshold value of (1, 100)]Dark voltage->Is determined according to different chip materials.
The invention also provides a multi-quadrant detector correction detection system based on the hot electron effect, which is used for realizing the correction detection method, and comprises the following steps:
the correction signal acquisition unit is used for measuring response voltages of different quadrant chips of the multi-quadrant detector under different light source output light powers and under a standard blackbody;
the correction calculation unit is used for calculating correction parameters of different quadrant chips of the multi-quadrant detector according to response voltages acquired under different conditions and writing the correction parameters into the corresponding signal amplifier;
a qualification judging unit for judging the ratio of the voltage dividing resistors according to the calculated ratioAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a correction detection method and a correction detection system for a multi-quadrant detector based on a hot electron effect, and the multi-quadrant detector after correction detection has the characteristics of wide spectrum coverage, high response speed and the like; by correcting the response voltage value of each quadrant chip and the dark voltage at different temperatures, the problem that the saturated detection power, the dark voltage/current and other performance parameters of each quadrant chip have certain difference due to the limitation of the manufacturing process is effectively solved.
Drawings
FIG. 1 is a schematic diagram of a fan-shaped multi-quadrant detector;
FIG. 2 is a schematic diagram of a trapezoidal multi-quadrant detector;
FIG. 3 shows the induced voltage and the asymmetric characteristic angle of the thin filmA relationship curve;
FIG. 4 is a schematic diagram of a multi-quadrant detector calibration detection system;
fig. 5 is a graph of the multi-quadrant detector spectral response.
Detailed Description
The invention will be further described with reference to the accompanying drawings.
A multi-quadrant detector correction detection method based on a hot electron effect comprises the following steps:
s1, utilizing a light source with a specific wavelength range corresponding to saturated light power of a chip with a thermal electron effect to irradiate each quadrant chip of a multi-quadrant detector based on the thermal electron effect, and adjusting the proportion of voltage dividing resistors corresponding to each quadrant chipThe response voltages are all adjusted to the average voltage corresponding to the saturated light power +.>I.e.
，
Wherein N is the number of quadrants of the multi-quadrant detector,is the ithThe saturated power voltage value detected by the quadrant chip;
s2, placing the multi-quadrant detector in a constant temperature environment with adjustable temperature, aligning to a standard blackbody, and collecting dark voltages of each quadrant chip at different temperatures，/>Dark voltage for the i-th quadrant chip;
s3, based on the incident light intensity of each quadrant chipAnd response voltage relation, namely, response voltage which is acquired by irradiating each quadrant chip of the multi-quadrant detector through a light source with unsaturated light power with specific wavelength>Calculating corresponding correction coefficient->The following formula is shown:
，
s4, each quadrant chip of the multi-quadrant detector is provided with an independent signal amplifier for calibrating the deviation value between different photoelectric detection chips and the reference chip; according to response voltages acquired under different conditions, calculating correction parameters of different quadrant chips of the multi-quadrant detector, and writing the correction parameters into corresponding signal amplifiers;
s5, according to the calculated voltage dividing resistance proportionAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise consider multiple imagesThe chips in the corresponding quadrants of the limit detector are not qualified.
The multi-quadrant detector based on the hot electron effect adopts a semiconductor film material with strong electron interaction and weak electron and phonon interaction, such as a lead salt semiconductor material and the like, and the spectral response covers visible light to mid-infrared light, and the responsivity reaches below 500ns.
Each quadrant chip of the multi-quadrant detector based on the hot electron effect adopts an asymmetric semiconductor film, and is generally fan-shaped or trapezoid; the number N of quadrants of the multi-quadrant detector is more than or equal to 4.
The multi-quadrant detector based on the hot electron effect has induced voltage and asymmetric characteristic angle of the thin filmThe following are related:
，
wherein x and y are the positions of the light spots,、/>is the electrode position; />Seebeck coefficient for hole; gamma is +.>Is a divergent relationship correlation factor of (a); />Is the intensity of the incident light; />Is the reflectivity of the film; d is the film thickness; />Is film absorptivity; />Is the beam spot radius.
The dark voltage at different temperatures in step S2 is related to the temperature T as follows:
，
wherein A, B is the temperature compensation coefficient.
In the step S2, the constant temperature environment is a darkroom, and the distance between the standard blackbody and the multi-quadrant detector is controlled within 5 cm.
S3, the incident light intensity of each quadrant chipThe response voltage relation is obtained by adjusting the incident power of the light source, collecting response voltages on different chips, and determining the function with the maximum correlation degree as the incident light intensity through fittingAnd a response voltage relationship function.
The ratio of the voltage dividing resistorsThe threshold value of (1, 100)]Dark voltage->Is determined according to different chip materials.
As shown in fig. 4, a multi-quadrant detector correction detection system based on a hot electron effect includes:
the correction signal acquisition unit is used for measuring response voltages of different quadrant chips of the multi-quadrant detector under different light source output light powers and under the standard black body through a signal measurement device formed by a light source with adjustable light power, a constant temperature controller, the standard black body and the like;
the correction calculation unit is used for calculating correction parameters of different quadrant chips of the multi-quadrant detector according to response voltages acquired under different conditions and writing the correction parameters into the corresponding signal amplifier;
a qualification judging unit for judging the ratio of the voltage dividing resistors according to the calculated ratioAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified.
Example 1
As shown in fig. 1, the multi-quadrant detector of the fan-shaped chip is shown in fig. 1 with (a) being a 4-quadrant detector, fig. 1 with (b) being an 8-quadrant detector, fig. 1 with (c) being a 16-quadrant detector, a central point being grounded, and arc edges being electrodes;
the lead salt semiconductor material is PbS, the thickness is 70nm, the spectral response of the multi-quadrant detector of the PbS film is shown in (a) of fig. 5, the spectral response range is 1um-3um, and the response time is less than 500ns.
Example 2
As shown in fig. 2, the multi-quadrant detector of the trapezoid chip is shown in fig. 2 with (a) being a 5-quadrant detector, fig. 2 with (b) being a 7-quadrant detector, fig. 2 with (c) being an 8-quadrant detector, a central point being grounded, and long sides of the trapezoid being electrodes;
the lead salt semiconductor material is PbSSe, the thickness is 53nm, the spectral response of the multi-quadrant detector of the PbSSe film is shown in (b) of fig. 5, the spectral response range is 0.8um-5um, and the response time is less than 500ns.
As can be seen from FIG. 3, the characteristic angle is asymmetric with the filmThe boundary scattering causes carrier scattering to increase sharply, and the induced voltage increases significantly.
The foregoing description of the preferred embodiments of the present invention has been presented only in terms of those specific and detailed descriptions, and is not, therefore, to be construed as limiting the scope of the invention. It should be noted that modifications, improvements and substitutions can be made by those skilled in the art without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (9)
1. A multi-quadrant detector correction detection method based on a hot electron effect is characterized by comprising the following steps of: the method comprises the following steps:
s1, utilizing a light source with a specific wavelength range corresponding to saturated light power of a chip with a thermal electron effect to irradiate each quadrant chip of a multi-quadrant detector based on the thermal electron effect, and adjusting the proportion of voltage dividing resistors corresponding to each quadrant chipThe response voltages are all adjusted to the average voltage corresponding to the saturated light power +.>I.e.
，
Wherein N is the number of quadrants of the multi-quadrant detector,the saturation power voltage value detected for the ith quadrant chip;
s2, placing the multi-quadrant detector in a constant temperature environment with adjustable temperature, aligning to a standard blackbody, and collecting dark voltages of each quadrant chip at different temperatures，/>Dark voltage for the i-th quadrant chip;
s3, based on the incident light intensity of each quadrant chipAnd response voltage relation, namely, response voltage which is acquired by irradiating each quadrant chip of the multi-quadrant detector through a light source with unsaturated light power with specific wavelength>Calculating corresponding correction coefficient->The following formula is shown:
，
s4, each quadrant chip of the multi-quadrant detector is provided with an independent signal amplifier for calibrating the deviation value between different photoelectric detection chips and the reference chip; according to response voltages acquired under different conditions, calculating correction parameters of different quadrant chips of the multi-quadrant detector, and writing the correction parameters into corresponding signal amplifiers;
s5, according to the calculated voltage dividing resistance proportionAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified.
2. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: the multi-quadrant detector based on the hot electron effect adopts a semiconductor film material with strong electron interaction and weak electron and phonon interaction, the spectral response covers visible light to mid-infrared light, and the responsivity is below 500ns.
3. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: each quadrant chip of the multi-quadrant detector based on the hot electron effect adopts an asymmetric semiconductor film, and the number N of quadrants of the multi-quadrant detector is more than or equal to 4.
4. A multi-quadrant detector correction detection method based on hot electron effect according to claim 3, characterized in that: the multi-quadrant detector based on the hot electron effect has induced voltage and asymmetric characteristic angle of the thin filmThe following are related:
，
wherein x and y are the positions of the light spots,、/>is the electrode position; />Seebeck coefficient for hole; gamma is +.>Is a divergent relationship correlation factor of (a); />Is the intensity of the incident light; />Is the reflectivity of the film; d is the film thickness; />Is film absorptivity; />Is the beam spot radius.
5. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: the dark voltage at different temperatures in step S2 is related to the temperature T as follows:
，
wherein A, B is the temperature compensation coefficient.
6. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: in the step S2, the constant temperature environment is a darkroom, and the distance between the standard blackbody and the multi-quadrant detector is controlled within 5 cm.
7. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: s3, the incident light intensity of each quadrant chipThe response voltage relation is obtained by adjusting the incident power of a light source, collecting response voltages on different chips, and determining a function with the maximum correlation degree as incident light intensity by fitting>And a response voltage relationship function.
8. The multi-quadrant detector correction detection method based on hot electron effect according to claim 1, characterized in that: the ratio of the voltage dividing resistorsIs of the threshold value of[1,100]Dark voltage->Is determined according to different chip materials.
9. A multi-quadrant detector correction detection system based on the hot electron effect, for implementing the correction detection method according to any one of claims 1 to 8, characterized in that: comprising the following steps:
the correction signal acquisition unit is used for measuring response voltages of different quadrant chips of the multi-quadrant detector under different light source output light powers and under a standard blackbody;
the correction calculation unit is used for calculating correction parameters of different quadrant chips of the multi-quadrant detector according to response voltages acquired under different conditions and writing the correction parameters into the corresponding signal amplifier;
a qualification judging unit for judging the ratio of the voltage dividing resistors according to the calculated ratioAnd dark voltages at different temperatures +.>Whether the preset threshold is met; if the chip meets the preset threshold, the chip in the corresponding quadrant in the multi-quadrant detector is considered to be qualified; otherwise, the chips in the corresponding quadrants in the multi-quadrant detector are considered to be unqualified.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1206582A (en) * | 1983-03-25 | 1986-06-24 | Carl Dodge | Acoustic caliper tool |
| CN102507148A (en) * | 2011-10-17 | 2012-06-20 | 南京理工大学 | Detection system of multi-quadrant photoelectric detector |
| CN102564598A (en) * | 2012-01-06 | 2012-07-11 | 电子科技大学 | Method for calibrating and correcting temperature measurement of infrared probe as well as corresponding temperature measuring method |
| US20190235100A1 (en) * | 2018-01-26 | 2019-08-01 | Carl Zeiss Industrielle Messtechnik Gmbh | Method and arrangement for detector correction for generating object radiographs |
| CN110836634A (en) * | 2019-09-16 | 2020-02-25 | 南京理工大学 | Four-quadrant detector calibration method capable of adapting to various light beams |
| CN111289101A (en) * | 2019-12-17 | 2020-06-16 | 西南技术物理研究所 | Portable quadrant detector impulse response rate parameter calibration device |
| CN112113671A (en) * | 2020-08-31 | 2020-12-22 | 武汉高德智感科技有限公司 | Infrared detector quality detection method and device |
| US20220324026A1 (en) * | 2021-04-13 | 2022-10-13 | Sigma Labs, Inc. | Apparatus and methods for calibrating on-axis temperature sensors for additive manufacturing systems |
| CN117110250A (en) * | 2023-10-25 | 2023-11-24 | 南昌大学 | Substance quantitative analysis method assisted by deep learning |
-
2023
- 2023-11-27 CN CN202311592313.6A patent/CN117288246B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1206582A (en) * | 1983-03-25 | 1986-06-24 | Carl Dodge | Acoustic caliper tool |
| CN102507148A (en) * | 2011-10-17 | 2012-06-20 | 南京理工大学 | Detection system of multi-quadrant photoelectric detector |
| CN102564598A (en) * | 2012-01-06 | 2012-07-11 | 电子科技大学 | Method for calibrating and correcting temperature measurement of infrared probe as well as corresponding temperature measuring method |
| US20190235100A1 (en) * | 2018-01-26 | 2019-08-01 | Carl Zeiss Industrielle Messtechnik Gmbh | Method and arrangement for detector correction for generating object radiographs |
| CN110836634A (en) * | 2019-09-16 | 2020-02-25 | 南京理工大学 | Four-quadrant detector calibration method capable of adapting to various light beams |
| CN111289101A (en) * | 2019-12-17 | 2020-06-16 | 西南技术物理研究所 | Portable quadrant detector impulse response rate parameter calibration device |
| CN112113671A (en) * | 2020-08-31 | 2020-12-22 | 武汉高德智感科技有限公司 | Infrared detector quality detection method and device |
| US20220324026A1 (en) * | 2021-04-13 | 2022-10-13 | Sigma Labs, Inc. | Apparatus and methods for calibrating on-axis temperature sensors for additive manufacturing systems |
| CN117110250A (en) * | 2023-10-25 | 2023-11-24 | 南昌大学 | Substance quantitative analysis method assisted by deep learning |
Non-Patent Citations (1)
| Title |
|---|
| 党丽萍;刘君华;唐树刚;: "象限探测器非均匀性的影响分析及软校正算法", 光子学报, no. 04 * |
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