CN117277061B - Multi-pulse envelope laser seed source - Google Patents
Multi-pulse envelope laser seed source Download PDFInfo
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- CN117277061B CN117277061B CN202311558541.1A CN202311558541A CN117277061B CN 117277061 B CN117277061 B CN 117277061B CN 202311558541 A CN202311558541 A CN 202311558541A CN 117277061 B CN117277061 B CN 117277061B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 68
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 239000013307 optical fiber Substances 0.000 claims description 14
- 230000035559 beat frequency Effects 0.000 claims description 4
- 230000001427 coherent effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 7
- 230000003321 amplification Effects 0.000 abstract description 4
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application relates to the technical field of lasers, and particularly provides a multi-pulse envelope laser seed source, which comprises a first working module, a second working module, an isolator, a half wave plate and a focusing lens; the first working module comprises a first semiconductor chip, a first beam collimating lens and a VBG crystal; the second working module comprises a first focusing lens, a second semiconductor chip, a second beam collimation lens, a detection device and a beam splitting lens. The method can obviously inhibit stimulated Brillouin scattering generated during long pulse, and can obtain higher peak power than the prior known product after power amplification. The test result of the application on the spectrometer is very narrow, which shows that the monochromaticity is very good, the application scene is very rich, and the price is also superior to the existing product.
Description
Technical Field
The application relates to the technical field of lasers, in particular to a multi-pulse envelope laser seed source.
Background
At present, in the process of amplifying a long pulse by using a fiber laser, it is generally found that when the pulse is amplified to a certain extent, the pulse shape becomes unstable, such as that a plurality of pulses are overlapped together, and intensity oscillation is observed, so that the pulse shape becomes chaotic. It has also been found that the pump power continues to be increased, and the peak power of the actual pulse is limited and is difficult to increase again. The biggest problem is that the pump light power is continuously increased, and the risk of fiber breaking and fiber burning is also increased. The intensity oscillation occurs due to the superposition of the pulses formed by the stimulated brillouin scattering and the actual pulses, and the peak cannot be increased any more because the stimulated brillouin scattering absorbs the increased pump light.
There are currently proposals to amplify in one cycle using two or three short pulses (around 1.5 ns) with a short time interval (1-2 ns) to form a pulse train. Because the threshold of stimulated brillouin scattering is proportional to the inverse of the pulse width, a short pulse can suppress the generation of stimulated brillouin scattering. However, there is still a problem in that the current pulse is modulated by an electronic control, and the number of pulses that can be generated and the total width of the plurality of pulses are limited. The more pulses, the narrower the pulse width, the poorer the uniformity and the poorer the pulse shape. This affects the final practical application effect and also increases the electrical control cost and the production cost. In actual work, the pulse width needs to be quickly adjusted, the circuit design and the device difference can seriously influence the light-emitting result, so that the pulse width modulation can need a long-time matching of the circuit design and the software design, and the method is quite unfavorable for productization.
Based on the above problems, no effective solution has been proposed in the prior art.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the present disclosure and thus may include information that does not constitute prior art known to those of ordinary skill in the art.
Disclosure of Invention
In view of the above-mentioned drawbacks and disadvantages of the prior art, the present application provides a multi-pulse envelope laser seed source, a device and an electronic apparatus, which can generate a plurality of continuous small pulses in a period, so as to achieve the same width of a required long pulse, and avoid stimulated brillouin scattering generated by the long pulse in the amplifying process, thereby obtaining higher peak power, and simultaneously, can rapidly adjust the repetition frequency and the width of the pulse envelope (all small pulses).
The invention provides a multi-pulse envelope laser seed source, comprising: a first work module and a second work module, wherein:
the first working module comprises a first semiconductor chip, a first beam collimating lens and a VBG crystal;
the first semiconductor chip is used for generating an initial laser beam based on the electric signal;
the first beam collimation lens is used for collimating the initial laser beam to obtain a first collimated laser beam;
the VBG crystal is used for outputting a continuous laser beam with a narrow linewidth through the first collimated laser beam;
the second working module comprises a first focusing lens, a second semiconductor chip and a second beam collimation lens;
the first focusing lens is used for coupling the continuous laser beam into the second semiconductor chip and driving the second semiconductor chip by using an electric pulse driver;
the second semiconductor chip adjusts the driving and the temperature of the second semiconductor chip to make the wavelengths of the continuous laser beam and the pulse laser beam beat frequency so as to make the continuous laser beam and the pulse laser beam coherent in time domain;
the second beam collimation lens is used for collimating the laser beam emitted by the output end of the second semiconductor chip to obtain a second collimated laser beam.
In one embodiment of the present invention, the first working module further includes a first temperature controller for controlling a temperature of the first semiconductor chip to ensure that a center wavelength of the initial laser beam output by the first working module remains unchanged.
In one embodiment of the invention, the first working module further comprises a first heat sink, the first semiconductor chip being arranged on the first heat sink.
In one embodiment of the present invention, the second operation module further includes a second temperature controller for adjusting a temperature of the second semiconductor chip to adjust a wavelength of the pulse laser beam.
In one embodiment of the invention, the second working module further comprises a second heat sink, the second semiconductor chip being arranged on the second heat sink.
In one embodiment of the present invention, the second working module further includes a beam splitting lens and a detection device;
the beam splitting lens is used for enabling part of the second collimated laser beam to pass through, and part of the second collimated laser beam is reflected into the detection device;
the detection device is used for confirming the wavelength and the waveform of the second collimated laser beam so that the beam splitting lens outputs a target laser beam.
In one embodiment of the invention, the detection means is adapted to output a power-off warning message when the laser beam is not detected.
In one embodiment of the present invention, the detecting device is further configured to, when the received wavelength and waveform of the second collimated laser beam are not the target laser beam, adjust the temperature of the second semiconductor chip by the second temperature controller or/and adjust the temperature of the first semiconductor chip by the first temperature controller to adjust the wavelength and waveform of the second collimated laser beam until the target laser beam is obtained.
In one embodiment of the invention, an isolator and a focusing lens are further included to couple the target laser beam into the optical fiber after passing through the isolator and the focusing lens in sequence.
In one embodiment of the present invention, the rear side of the isolator is further provided with a half wave plate for converting the target laser light into polarized laser light when the optical fiber is a polarized optical fiber.
Compared with the prior art, the technical scheme of the application has the following advantages:
the multi-pulse envelope laser seed source can generate a plurality of continuous small pulses in one period, achieves the same width of a required long pulse, avoids stimulated Brillouin scattering generated in an amplifying process of the long pulse, and accordingly obtains higher peak power, and meanwhile can rapidly adjust the repetition frequency and the width of a pulse envelope (all small pulses).
Drawings
In order that the invention may be more readily understood, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings, in which:
FIG. 1 shows a schematic diagram of a multi-pulse envelope laser seed source provided in an embodiment of the present application;
FIG. 2 shows another schematic diagram of a multi-pulse envelope laser seed source provided in an embodiment of the present application;
FIG. 3 shows a prior art pulse shape diagram of a conventional seed after enlargement when the pulse width is 9.4 ns;
FIG. 4 shows a prior art pulse shape diagram of a conventional seed after enlargement when the pulse width is 19.2 ns;
FIG. 5 shows a prior art pulse shape diagram of a conventional seed after enlargement when the pulse width is 48.5 ns;
FIG. 6 shows a prior art pulse shape diagram of a conventional seed after enlargement when the pulse width is 92 ns;
fig. 7 shows a pulse shape diagram of a multi-pulse envelope laser seed source provided by an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it should be understood that the accompanying drawings in the present application are only for the purpose of illustration and description, and are not intended to limit the protection scope of the present application. In addition, it should be understood that the schematic drawings are not drawn to scale. A flowchart, as used in this application, illustrates operations implemented according to some embodiments of the present application. It should be appreciated that the operations of the flow diagrams may be implemented out of order and that steps without logical context may be performed in reverse order or concurrently. Moreover, one or more other operations may be added to the flow diagrams and one or more operations may be removed from the flow diagrams as directed by those skilled in the art.
In addition, the described embodiments are only some, but not all, of the embodiments of the present application. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, are intended to be within the scope of the present application.
In order to enable one skilled in the art to use the present disclosure, the following embodiments are presented in connection with a particular application scenario "multipulse envelope laser seed source based on optical pulse frequency domain coherence", and it will be apparent to one skilled in the art that the general principles defined herein may be applied to other embodiments and application scenarios without departing from the spirit and scope of the present disclosure.
The method described below in the embodiments of the present application may be applied to any scenario where a multi-pulse envelope laser seed source based on optical pulse frequency domain coherence is required, and the embodiments of the present application do not limit specific application scenarios, and any scheme using a multi-pulse envelope laser seed source based on optical pulse frequency domain coherence provided in the embodiments of the present application is within the scope of protection of the present application.
In order to facilitate understanding of the present application, the technical solutions provided in the present application are described in detail below in conjunction with specific embodiments.
Fig. 1 is a schematic structural diagram of a multi-pulse envelope laser seed source according to an embodiment of the present application. As shown in fig. 1, includes: a first work module 100 and a second work module 200, wherein:
the first working module 100 includes a first semiconductor chip 110, a first beam collimating lens 120, and a VBG crystal 130;
the first semiconductor chip 110 is used for generating an initial laser beam by an electrical signal;
the first beam collimating lens 120 is configured to collimate the initial laser beam to obtain a first collimated laser beam;
the VBG crystal 130 is configured to output a continuous laser beam with a narrow linewidth through the first collimated laser beam;
the second working module 200 includes a first focusing lens 210, a second semiconductor chip 220, and a second beam collimating lens 230;
the first focusing lens 210 is used to couple the continuous laser beam into the second semiconductor chip 220 and drive the second semiconductor chip 220 using an electric pulse driver;
the second semiconductor chip 220 makes the wavelengths of the continuous laser beam and the pulse laser beam beat frequency by adjusting the driving and the temperature of the second semiconductor chip so that the continuous laser beam and the pulse laser beam are coherent in time domain;
the second beam collimating lens 230 is configured to collimate the laser beam emitted from the output end of the second semiconductor chip 220 to obtain a second collimated laser beam.
In the first working module 100, as shown in fig. 1, the first semiconductor chip 110 generates laser light by an electrical signal (pulse or direct current may be used), and the laser light is collimated by the first beam collimating lens 120 and then passes through the VBG crystal 130, thereby obtaining continuous laser light with a narrow linewidth.
In some possible embodiments, as shown in fig. 2, the first working module 100 further includes a first temperature controller 150, where the first temperature controller 150 is configured to control the temperature of the first semiconductor chip 110, so as to ensure that the center wavelength of the initial laser beam output by the first working module remains unchanged.
In some possible embodiments, the first working module 100 further includes a first heat sink 140, and the first semiconductor chip 110 is disposed on the first heat sink 140.
In some possible embodiments, the second operation module 200 further includes a second temperature controller 270, and the second temperature controller 270 is configured to adjust the temperature of the second semiconductor chip 220 to adjust the wavelength of the pulse laser beam.
In some possible embodiments, the second working module 200 further includes a second heat sink 260, and the second semiconductor chip 220 is disposed on the second heat sink 260.
Illustratively, two temperature controllers, namely a first temperature controller 150 and a second temperature controller 270, respectively control two heat sinks. The first temperature controller 150 controls the temperature of the first heat sink 140, and the second temperature controller 270 controls the temperature of the second heat sink 260, ensuring that the first and second semiconductor chips 110 and 220 are not damaged due to overheating, while the laser wavelength generated by the first and second semiconductor chips 110 and 220 can be properly adjusted by the temperature.
Illustratively, the continuous laser beam generated by the first working module 100 is subsequently focused into the second semiconductor chip 220 on the second heat sink 260, and the second semiconductor chip 220 may select a semiconductor chip with a longer cavity length, while the second semiconductor chip 220 is connected to the pulse signal. Further, when the second semiconductor chip 220 is operated alone, a pulse laser is generated, and the operation signal may set its pulse width according to actual needs, but the peak power cannot be too high and must be limited.
The laser light generated by the simultaneous operation of the first semiconductor chip 110 and the second semiconductor chip 220 of the present application can see an envelope formed by many small pulses on an oscilloscope. Note that, in addition to spatially coupling the laser light generated by the first working module 100 into the second semiconductor chip 220, it is also necessary to adjust the wavelengths of the continuous laser beam and the pulse laser beam to be similar, so that the continuous laser beam and the pulse laser beam beat frequency, thereby obtaining coherence in the time domain. The output laser light passes through the second beam collimating lens 230 to obtain a collimated beam, and then passes through the beam splitting lens 250, so that most of the laser light passes through, and only a small part of the laser light can be reflected into the detecting device 240.
In some possible embodiments, the second working module 200 further includes a beam splitting lens 250 and a detection device 240;
the beam splitting mirror 250 is configured to pass a part of the second collimated laser beam, and reflect a part of the second collimated laser beam into the detecting device 240;
the detecting device 240 is configured to confirm the wavelength and waveform of the second collimated laser beam, so that the beam splitter 250 outputs a target laser beam.
In some possible embodiments, the detecting device 240 is configured to output a power-off alarm message when the laser beam is not detected.
In some possible embodiments, the detecting device 240 is further configured to, when the received wavelength and waveform of the second collimated laser beam are not the target laser beam, adjust the temperature of the second semiconductor chip 220 by the second temperature controller 270 or/and adjust the temperature of the first semiconductor chip 110 by the first temperature controller 150 to adjust the wavelength and waveform of the second collimated laser beam until the target laser beam is obtained.
Illustratively, the first semiconductor chip 110 of the present application emits light through the VBG crystal 130 to make the first semiconductor chip 110 emit light into a narrow line width; light of a narrow line width emitted from the first semiconductor chip 110 enters the second semiconductor chip 220 to be absorbed by the second semiconductor chip 220, and simultaneously, the second semiconductor chip 220 is driven by a pulse signal; the temperature of the second semiconductor chip 220 is controlled by the second temperature controller 270, and the set value is 25 ℃ (preferably, at 25 ℃, the target waveform is a center wavelength 1064nm, and the average power is 5mW or more); if the received second collimated beam waveform is not satisfactory, the temperature of the first semiconductor chip 110 needs to be adjusted. The temperature is adjusted from 23.5 ℃ to 25.5 ℃ until the target waveform is met.
Further, through holes (TEC, i.e. temperature controller, is arranged under the heat sink) are arranged on the first heat sink 140 arranged under the first semiconductor chip 110 and the second heat sink 260 arranged under the second semiconductor chip 220, and a temperature sensor is arranged in the through holes for monitoring the chip temperature; the temperature controller is turned on, the heat sink is heated to a temperature of 23.5 ℃ on the side close to the semiconductor chip, and the bottom surface is cooled (or vice versa), and the first temperature controller 150 generally heats the first heat sink 140 to a set temperature, and controls the side close to the first semiconductor chip 110 to heat and maintain 23.5 ℃. After changing the set temperature, the first temperature controller will also change accordingly. ( It should be noted that: the temperature controller is arranged under the heat sink, and the temperature sensor is arranged in the heat sink. The temperature sensor is close to the semiconductor chip, so that the temperature can be accurately controlled. )
Further, the detection device 240 immediately alarms and de-energizes once it does not receive the second collimated laser beam.
In some possible embodiments, an isolator 300 and a focusing lens 500 are further included to couple the target laser beam into the optical fiber after passing through the isolator 300 and the focusing lens 500 in sequence.
Illustratively, the target laser light that sequentially passes through isolator 300 and focusing lens 500 is coupled into an optical fiber to facilitate subsequent optical amplification. It should be noted that, the pin of external control of the multi-pulse envelope laser seed source provided in the present application needs to have at least the following functions: positive and negative electrodes of the thermistor and input and output of working current; positive and negative electrodes required by PD; two independently controlled and adjustable temperature controls; a radio frequency signal; and (5) grounding.
In some possible embodiments, the rear side of the isolator 300 is further provided with a half wave plate 400 for converting the target laser light into polarized laser light when the optical fiber is a polarized optical fiber.
Illustratively, the half-wave plate 400 is used to convert the output target laser light into polarized laser light, so that the optical fiber is a polarized optical fiber, and the half-wave plate 400 is not required if the optical fiber is a normal optical fiber.
In a specific embodiment, referring to fig. 3 to 6, it can be seen that the shape of the pulse is generally affected by the SBS and GS of the amplified pulse of the seed. Such waveforms are very bad, and by the multi-pulse envelope laser seed source of the present application, the modified pulse is as shown in fig. 7, and see fig. 7, where one large pulse is an envelope composed of equally spaced small pulses, and the waveforms of the light pulses are unchanged after amplification, suppressing SBS and CS.
In summary, compared with the advantages of the existing known product, the multi-pulse envelope laser seed source provided by the embodiment of the application can obviously inhibit stimulated brillouin scattering under the condition of the same long pulse width, and can obtain higher peak power than the existing known product after power amplification. The test results of the invention on the spectrometer are also very narrow, which indicates that the monochromaticity is very good, and the price is also advantageous over the existing products.
It should be apparent to those skilled in the art that embodiments of the present application may be provided as methods, systems. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present invention will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. And obvious variations or modifications thereof are contemplated as falling within the scope of the present invention.
Claims (10)
1. A multi-pulse envelope laser seed source comprising: a first work module and a second work module, wherein:
the first working module comprises a first semiconductor chip, a first beam collimating lens and a VBG crystal;
the first semiconductor chip is used for generating an initial laser beam through an electric signal;
the first beam collimation lens is used for collimating the initial laser beam to obtain a first collimated laser beam;
the VBG crystal is used for outputting a continuous laser beam with a narrow linewidth through the first collimated laser beam;
the second working module comprises a first focusing lens, a second semiconductor chip and a second beam collimation lens;
the first focusing lens is used for coupling the continuous laser beam into the second semiconductor chip and driving the second semiconductor chip by using an electric pulse driver;
the second semiconductor chip adjusts the driving and the temperature of the second semiconductor chip to make the wavelengths of the continuous laser beam and the pulse laser beam beat frequency so as to make the continuous laser beam and the pulse laser beam coherent in time domain;
the second beam collimation lens is used for collimating the laser beam emitted by the output end of the second semiconductor chip to obtain a second collimated laser beam.
2. The multi-pulse envelope laser seed source of claim 1, wherein the first working module further comprises a first temperature controller for controlling the temperature of the first semiconductor chip to ensure that the center wavelength of the initial laser beam output by the first working module remains unchanged.
3. The multi-pulse envelope laser seed source of claim 2, wherein the first working module further comprises a first heat sink on which the first semiconductor chip is disposed.
4. The multi-pulse envelope laser seed source of claim 1, wherein the second working module further comprises a second temperature controller for adjusting the temperature of the second semiconductor chip to adjust the wavelength of the pulsed laser beam.
5. The multi-pulse envelope laser seed source of claim 4, wherein the second working module further comprises a second heat sink, the second semiconductor chip being disposed on the second heat sink.
6. The multi-pulse envelope laser seed source of claim 1, wherein the second working module further comprises a beam splitting lens and a detection device;
the beam splitting lens is used for enabling part of the second collimated laser beam to pass through, and part of the second collimated laser beam is reflected into the detection device;
the detection device is used for confirming the wavelength and the waveform of the second collimated laser beam so that the beam splitting lens outputs a target laser beam.
7. The multi-pulse envelope laser seed source of claim 6, wherein the detection means is adapted to output a power-off warning message when no laser beam is detected.
8. The multi-pulse envelope laser seed source of claim 6, wherein the detection means is further adapted to adjust the temperature of the second semiconductor chip by a second temperature controller or/and the temperature of the first semiconductor chip by a first temperature controller when the received wavelength and waveform of the second collimated laser beam is not the target laser beam, to adjust the wavelength and waveform of the second collimated laser beam until the target laser beam is obtained.
9. The multi-pulse envelope laser seed source of claim 6, further comprising an isolator and a focusing optic to post-couple the target laser beam into an optical fiber sequentially through the isolator and the focusing optic.
10. The multi-pulse envelope laser seed source of claim 9, wherein the isolator rear side is further provided with a half wave plate for converting the target laser light into polarized laser light when the optical fiber is a polarized optical fiber.
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| CN202311558541.1A CN117277061B (en) | 2023-11-22 | 2023-11-22 | Multi-pulse envelope laser seed source |
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| CN102957090A (en) * | 2012-11-29 | 2013-03-06 | 合肥知常光电科技有限公司 | Tunable narrow-line-width picosecond pulse laser device |
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| CN115207755A (en) * | 2022-08-06 | 2022-10-18 | 苏州国顺激光技术有限公司 | Adjustable gain amplifier and gain adjusting method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR102384695B1 (en) * | 2017-12-07 | 2022-04-08 | 한국전자통신연구원 | Semiconductor laser diode light source package |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102957090A (en) * | 2012-11-29 | 2013-03-06 | 合肥知常光电科技有限公司 | Tunable narrow-line-width picosecond pulse laser device |
| CN108963736A (en) * | 2018-08-16 | 2018-12-07 | 深圳番越光电有限公司 | A kind of high-peak power picosecond and nanosecond short-wavelength light fibre laser |
| CN111262124A (en) * | 2020-03-06 | 2020-06-09 | 河北工业大学 | Brillouin laser |
| CN111541138A (en) * | 2020-04-17 | 2020-08-14 | 华南理工大学 | Device for inhibiting stimulated Brillouin scattering in high-power narrow-linewidth optical fiber laser |
| CN115207755A (en) * | 2022-08-06 | 2022-10-18 | 苏州国顺激光技术有限公司 | Adjustable gain amplifier and gain adjusting method thereof |
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