CN117271399A - Solid state disk controller and circuit controller - Google Patents

Solid state disk controller and circuit controller Download PDF

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CN117271399A
CN117271399A CN202210668588.2A CN202210668588A CN117271399A CN 117271399 A CN117271399 A CN 117271399A CN 202210668588 A CN202210668588 A CN 202210668588A CN 117271399 A CN117271399 A CN 117271399A
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voltage
supply voltages
result
flash memory
solid state
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陈彦仲
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Realtek Semiconductor Corp
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Realtek Semiconductor Corp
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668Details of memory controller
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits

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  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
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Abstract

A solid state disk controller is capable of judging whether M supply voltages supplied to a NAND flash memory are correct. The solid state disk controller comprises: a voltage detector for receiving the M supply voltages and generating detection results therefrom, wherein M is a positive integer; the voltage inquiry module is used for outputting an inquiry signal to the NAND flash memory so as to acquire a response signal from the NAND flash memory and generate an inquiry result according to the response signal, wherein the inquiry result indicates M specified supply voltages applicable to the NAND flash memory; and the voltage judging module is used for receiving the detection result and the query result, judging whether the M supply voltages are equal to the M specified supply voltages according to the detection result and the query result, and outputting a judging result.

Description

固态硬盘控制器与电路控制器Solid state drive controller and circuit controller

技术领域Technical field

本发明是关于能够检测受控电路的供应电压是否正确的控制器,尤其是关于能够检测受控电路的供应电压是否正确的控制器。The present invention relates to a controller capable of detecting whether the supply voltage of a controlled circuit is correct, and in particular to a controller capable of detecting whether the supply voltage of a controlled circuit is correct.

背景技术Background technique

固态硬盘(solid-state drive(SSD))的储存组件通常为反及型闪存(NAND flashmemory)。一般而言,反及型闪存的电压供应包括内部电路供应电压(VCC)与输入/输出(input/output(IO))接口供应电压(VCCQ)。随着半导体制程的演进,不同规格的反及型闪存的电压供应可能须基于不同的电压要求;如果电压供应不是反及型闪存的规定电压,该反及型闪存可能无法正常工作,或者该反及型闪存的使用寿命会受到影响。举例而言,该VCC可能为3.3V或2.5V,该VCCQ可能为3.3V、1.8V或1.2V;可以预见的是,未来新制程的反及型闪存会涉及更多种的电压设定,多种电压设定会给SSD模块厂商(SSD module maker)带来生产上的困扰,也会使得SSD控制器厂商在协助解决生产问题与找出错处时,须以人工方式去确认是否错误的电压设定造成SSD不正常地工作。The storage component of a solid-state drive (SSD) is usually NAND flash memory. Generally speaking, the voltage supply of NAND flash memory includes internal circuit supply voltage (VCC) and input/output (IO) interface supply voltage (VCCQ). With the evolution of semiconductor manufacturing processes, the voltage supply of NAND flash memory with different specifications may have to be based on different voltage requirements; if the voltage supply is not the specified voltage of NAND flash memory, the NAND flash memory may not work properly, or the NAND flash memory may not work properly. The service life of flash memory will be affected. For example, the VCC may be 3.3V or 2.5V, and the VCCQ may be 3.3V, 1.8V or 1.2V. It is foreseeable that in the future, the NAND flash memory of the new process will involve more voltage settings. Multiple voltage settings will cause production troubles for SSD module manufacturers, and will also cause SSD controller manufacturers to manually confirm whether the voltage is wrong when helping to solve production problems and find errors. The settings cause the SSD to work improperly.

发明内容Contents of the invention

本发明的目的之一在于提供一种固态硬盘(solid-state drive(SSD))控制器与电路控制器,以自动地确认是否错误的电压设定造成SSD/受控电路不正常地工作。One object of the present invention is to provide a solid-state drive (SSD) controller and a circuit controller to automatically determine whether incorrect voltage settings cause the SSD/controlled circuit to operate abnormally.

本发明的SSD控制器的实施例能够判断供应到反及型闪存的M个供应电压是否正确。该实施例的SSD控制器包含电压检测器、电压查询模块与电压判断模块。该电压检测器用于接收该M个供应电压并由此产生检测结果,其中该M为正整数。该电压查询模块用于输出查询信号到该反及型闪存,以从该反及型闪存取得响应信号,从而依据该响应信号产生查询结果,其中该查询结果指出适用于该反及型闪存的M个规定供应电压。该电压判断模块用于接收该检测结果与该查询结果,以依据该检测结果与该查询结果判断该M个供应电压是否等同于该M个规定供应电压,从而输出判断结果。Embodiments of the SSD controller of the present invention can determine whether the M supply voltages supplied to the NAND flash memory are correct. The SSD controller in this embodiment includes a voltage detector, a voltage query module and a voltage judgment module. The voltage detector is used to receive the M supply voltages and generate detection results therefrom, where M is a positive integer. The voltage query module is used to output a query signal to the NAND flash memory, to obtain a response signal from the NAND flash memory, and to generate a query result based on the response signal, wherein the query result indicates that the M voltage applicable to the NAND flash memory is a specified supply voltage. The voltage judgment module is used to receive the detection result and the query result, and determine whether the M supply voltages are equal to the M prescribed supply voltages based on the detection result and the query result, thereby outputting the judgment result.

本发明的电路控制器的实施例能够判断供应到受控电路的M个供应电压是否正确。该实施例的电路控制器包含电压检测器、电压查询模块与电压判断模块。该电压检测器用于接收该M个供应电压并由此产生检测结果,其中该M为正整数。该电压查询模块用于输出查询信号到该受控电路,以从该受控电路取得响应信号,从而依据该响应信号产生查询结果,其中该查询结果指出适用于该受控电路的M个规定供应电压。该电压判断模块用于接收该检测结果与该查询结果,以依据该检测结果与该查询结果判断该M个供应电压是否等同于该M个规定供应电压,从而输出判断结果。Embodiments of the circuit controller of the present invention are able to determine whether the M supply voltages supplied to the controlled circuit are correct. The circuit controller of this embodiment includes a voltage detector, a voltage query module and a voltage judgment module. The voltage detector is used to receive the M supply voltages and generate detection results therefrom, where M is a positive integer. The voltage query module is used to output a query signal to the controlled circuit to obtain a response signal from the controlled circuit, thereby generating a query result based on the response signal, wherein the query result indicates M specified supplies applicable to the controlled circuit. Voltage. The voltage judgment module is used to receive the detection result and the query result, and determine whether the M supply voltages are equal to the M prescribed supply voltages based on the detection result and the query result, thereby outputting the judgment result.

有关本发明的特征、操作与功效,将在下文结合附图对较佳实施例进行详细说明。Regarding the features, operations and effects of the present invention, the preferred embodiments will be described in detail below with reference to the accompanying drawings.

附图说明Description of the drawings

图1显示本发明的控制器的一个实施例。Figure 1 shows an embodiment of the controller of the present invention.

符号说明:Symbol Description:

100:控制器100: Controller

110:电压检测器110: Voltage detector

120:电压查询模块120: Voltage query module

130:电压判断模块130: Voltage judgment module

RSDET:检测结果RS DET : test result

SREQ:查询信号S REQ : query signal

SRESP::响应信号S RESP ::Response signal

RSSPEC:查询结果RS SPEC : query results

RSFIN:判断结果RS FIN : Judgment result

具体实施方式Detailed ways

本说明书发明了一种能够检测受控电路的供应电压是否正确的控制器,其中该控制器可以是固态硬盘(solid-state drive(SSD))控制器或其它种电路控制器(例如:嵌入式多媒体卡(Embedded Multimedia Card(eMMC))控制器、通用闪存(Universal FlashStorage(UFS))控制器、或安全数字记忆卡(Secure Digital(SD)Memory Card)控制器),该受控电路可以是反及型闪存(NAND flash memory)。This specification invented a controller that can detect whether the supply voltage of the controlled circuit is correct, wherein the controller can be a solid-state drive (SSD) controller or other types of circuit controllers (such as embedded Multimedia Card (Embedded Multimedia Card (eMMC)) controller, Universal Flash Storage (UFS) controller, or Secure Digital (SD) Memory Card (Secure Digital (SD) Memory Card) controller), the controlled circuit can be a reverse NAND flash memory.

图1显示本发明的控制器的一个实施例。图1的控制器100(例如:SSD控制器)能够判断供应到受控电路(例如:反及型闪存)的M个供应电压是否正确,其中该M为正整数。举例而言,该M为不小于2的整数,该M个供应电压包含内部电路供应电压(VCC)及/或输入/输出(input/output(IO))接口供应电压(VCCQ)。SSD控制器100包含电压检测器110、电压查询模块120与电压判断模块130,上述单元分别在底下的段落进行说明。Figure 1 shows an embodiment of the controller of the present invention. The controller 100 of FIG. 1 (eg, SSD controller) can determine whether the M supply voltages supplied to the controlled circuit (eg, NAND flash memory) are correct, where M is a positive integer. For example, the M is an integer not less than 2, and the M supply voltages include an internal circuit supply voltage (VCC) and/or an input/output (IO) interface supply voltage (VCCQ). The SSD controller 100 includes a voltage detector 110, a voltage query module 120 and a voltage judgment module 130. The above units are described in the following paragraphs respectively.

请参阅图1。电压检测器110用于接收该M个供应电压并由此产生检测结果RSDET。举例而言,电压检测器110包含已知的/自行开发的模拟至数字转换器(未显示于图中),用于依据该M个供应电压产生该检测结果RSDET;然而,上述作法并非本发明的实施限制,其它可用于检测并量测该M个供应电压的检测器(例如:可将电压信号转成数字信号的数字式/模拟式电压(voltage meter))可替代该模拟至数字转换器。值得注意的是,当该M大于1时,电压检测器110可依序接收该M个供应电压并加以处理,或以不同路径同时接收该M个供应电压并加以处理;该检测结果RSDET包含M个部分,该M个部分分别对应该M个供应电压;举例而言,当该M个供应电压为前述VCC与VCCQ时,该检测结果RSDET包含第一部分RSDET_1对应该VCC,并包含第二部分RSDET_2对应该VCCQ。See Figure 1. The voltage detector 110 is used to receive the M supply voltages and generate detection results RS DET therefrom. For example, the voltage detector 110 includes a known/self-developed analog-to-digital converter (not shown in the figure) for generating the detection result RS DET according to the M supply voltages; however, the above method is not the present invention. Implementation limitations of the invention, other detectors that can be used to detect and measure the M supply voltages (for example: a digital/analog voltage meter that can convert voltage signals into digital signals) can replace the analog-to-digital conversion device. It is worth noting that when M is greater than 1, the voltage detector 110 can receive and process the M supply voltages sequentially, or simultaneously receive and process the M supply voltages through different paths; the detection result RS DET includes M parts, the M parts respectively correspond to the M supply voltages; for example, when the M supply voltages are the aforementioned VCC and VCCQ, the detection result RS DET includes the first part RS DET _1 corresponding to the VCC, and includes The second part RS DET _2 corresponds to the VCCQ.

请参阅图1。电压查询模块120用于输出查询信号SREQ到该反及型闪存,以要求该反及型闪存提供适用于该反及型闪存的供应电压的信息。接下来,电压查询模块120从该反及型闪存取得响应信号SRESP,以依据该响应信号SRESP产生查询结果RSSPEC,其中该响应信号SRESP是该反及型闪存因应该查询信号SREQ所输出的信号,该查询结果RSSPEC指出适用于该反及型闪存的M个规定供应电压。值得注意的是,当该M大于1时,该查询结果RSSPEC包含M个部分,该M个部分分别对应该M个规定供应电压;举例而言,当该M个供应电压为前述VCC与VCCQ时,该查询结果RSSPEC包含第一部分RSSPEC_1指出第一规定供应电压VCCSPEC,并包含第二部分RSSPEC_2指出第二规定供应电压VCCQSPEC,该VCCSPEC与VCCQSPEC分别关联该VCC与VCCQ。See Figure 1. The voltage query module 120 is configured to output a query signal S REQ to the NAND flash memory to request the NAND flash memory to provide information suitable for the supply voltage of the NAND flash memory. Next, the voltage query module 120 obtains the response signal S RESP from the NAND flash memory to generate the query result RS SPEC according to the response signal S RESP , where the response signal S RESP is the query signal S REQ of the NAND flash memory. The output signal, the query result RS SPEC , indicates the M specified supply voltages applicable to the NAND flash memory. It is worth noting that when M is greater than 1, the query result RS SPEC includes M parts, and the M parts respectively correspond to the M specified supply voltages; for example, when the M supply voltages are the aforementioned VCC and VCCQ When , the query result RS SPEC includes the first part RS SPEC_1 indicating the first specified supply voltage VCCSPEC, and includes the second part RS SPEC_2 indicating the second specified supply voltage VCCQSPEC. The VCCSPEC and VCCQSPEC are respectively associated with the VCC and VCCQ.

请参阅图1。电压判断模块130用于接收该检测结果RSDET与该查询结果RSSPEC,以依据该检测结果RSDET与该查询结果RSSPEC判断该M个供应电压是否等同于该M个规定供应电压,从而输出判断结果RSFIN。举例而言,当该M个供应电压不同于该M个规定供应电压时,电压判断模块130输出该判断结果RSFIN作为该M个规定供应电压的手动/自动调整依据。举例而言,该判断结果RSFIN可以是警报信号(例如:指示灯控制信号或扬声器控制信号),该警报信号用于提醒操作者该M个供应电压有误。值得注意的是,当该M大于1时,该判断结果RSFIN为单一的结果,或为依序输出的M个部分;该单一的结果用于指出该M个供应电压整体而言(as a whole)是否有误;该M个部分分别对应该M个供应电压,用于指出该M个供应电压个别而言(individually)是否有误。举例而言,当该M个供应电压为前述VCC与VCCQ时,该判断结果RSFIN包含第一部分RSFIN_1指出该VCC是否有误,并包含第二部分RSFIN_2指出该VCCQ是否有误。See Figure 1. The voltage judgment module 130 is configured to receive the detection result RS DET and the query result RS SPEC , and determine whether the M supply voltages are equal to the M prescribed supply voltages according to the detection result RS DET and the query result RS SPEC , thereby outputting The judgment result is RS FIN . For example, when the M supply voltages are different from the M prescribed supply voltages, the voltage judgment module 130 outputs the judgment result RS FIN as a basis for manual/automatic adjustment of the M prescribed supply voltages. For example, the judgment result RS FIN may be an alarm signal (such as an indicator light control signal or a speaker control signal). The alarm signal is used to remind the operator that the M supply voltages are incorrect. It is worth noting that when M is greater than 1, the judgment result RS FIN is a single result, or M parts output sequentially; the single result is used to indicate the M supply voltages as a whole (as a whole) is incorrect; the M parts respectively correspond to the M supply voltages, and are used to indicate whether the M supply voltages are individually (individually) incorrect. For example, when the M supply voltages are the aforementioned VCC and VCCQ, the judgment result RS FIN includes the first part RS FIN_1 indicating whether the VCC is incorrect, and includes the second part RS FIN_2 indicating whether the VCCQ is incorrect.

请参阅图1。在控制器100的操作范例中,控制器100进一步包含已知的/自行开发的处理器(未显示于图中)。该处理器执行固件以实现电压查询模块120与电压判断模块130的至少其中之一,该固件的内容可依前述电压查询模块120与电压判断模块130的说明以及已知的固件编写技术推导而得。上述操作范例无需以额外的硬件来实现电压查询模块120与电压判断模块130,因此可节省硬件成本。See Figure 1. In an operating example of the controller 100, the controller 100 further includes a known/home-developed processor (not shown in the figure). The processor executes firmware to implement at least one of the voltage query module 120 and the voltage judgment module 130. The content of the firmware can be deduced according to the description of the voltage query module 120 and the voltage judgment module 130 as well as known firmware writing techniques. . The above operation example does not require additional hardware to implement the voltage query module 120 and the voltage judgment module 130, thus saving hardware costs.

请参阅图1。在控制器100的操作范例中,电压查询模块120与电压判断模块130的至少其中之一是以硬件实现,其中该硬件的组成可依前述电压查询模块120与电压判断模块130的说明推导而得。上述操作范例可快速地产生该查询结果RSSPEC及/或该判断结果RSFIN,从而达到较佳的整体运作效能。See Figure 1. In the operation example of the controller 100 , at least one of the voltage query module 120 and the voltage judgment module 130 is implemented in hardware, and the composition of the hardware can be derived from the aforementioned description of the voltage query module 120 and the voltage judgment module 130 . The above operation example can quickly generate the query result RS SPEC and/or the judgment result RS FIN , thereby achieving better overall operation performance.

请参阅图1。在控制器100的操作范例中,该响应信号SRESP包含该反及型闪存的身份证明(identification(ID));电压查询模块120依据该身份证明查询预存的数据(例如:多种反及型闪存的规定供应电压的信息),以得知该反及型闪存所对应的该M个规定供应电压,从而产生该查询结果RSSPEC。在控制器100的操作范例中,该响应信号SRESP包含该反及型闪存的至少一个参数(例如:单次可编写(one-time programmable(OTP))储存组件的数据,包含该反及型闪存的规定供应电压的信息);电压查询模块120解析该至少一个参数,以得知该反及型闪存所对应的该M个规定供应电压,从而产生该查询结果。See Figure 1. In the operation example of the controller 100 , the response signal S RESP includes the identification (ID) of the NAND flash memory; the voltage query module 120 queries pre-stored data (for example: multiple NAND flash memory) based on the identification. information of the specified supply voltage of the flash memory) to obtain the M specified supply voltages corresponding to the NAND flash memory, thereby generating the query result RS SPEC . In the operation example of the controller 100, the response signal S RESP includes at least one parameter of the NAND flash memory (for example, one-time programmable (OTP)) storage component data, including the NAND type flash memory. information of the specified supply voltage of the flash memory); the voltage query module 120 parses the at least one parameter to learn the M specified supply voltages corresponding to the NAND flash memory, thereby generating the query result.

值得注意的是,控制器100可能包含其它电路与功能以控制该受控制电路,然此不在本发明申请的讨论范围内。It is worth noting that the controller 100 may include other circuits and functions to control the controlled circuit, but this is beyond the scope of the present application.

请注意,在实施为可能的前提下,本技术领域普通技术人员可选择性地实施前述任一实施例中部分或全部技术特征,或选择性地实施前述多个实施例中部分或全部技术特征的组合,由此增加本发明实施时的弹性。Please note that, provided that implementation is possible, those of ordinary skill in the art may selectively implement some or all of the technical features in any of the foregoing embodiments, or selectively implement some or all of the technical features of multiple of the foregoing embodiments. combination, thereby increasing the flexibility in implementing the present invention.

综上所述,本发明申请的控制器(例如:SSD控制器)能够自动检测受控电路(例如:反及型闪存)的供应电压是否正确,以快速地确认是否错误的电压设定造成该受控电路不能正常地工作。To sum up, the controller of the present invention (for example: SSD controller) can automatically detect whether the supply voltage of the controlled circuit (for example: NAND flash memory) is correct, so as to quickly confirm whether the wrong voltage setting causes the problem. The controlled circuit does not work properly.

虽然上文已公开了本发明优选且可行的实施例,然而这些实施例并非用于限定本发明,本技术领域普通技术人员可依据本发明的明示或隐含的内容对本发明的技术特征施以变化,凡此种种变化均属于本发明所寻求的专利保护范为内,换言之,本发明的专利保护范围须视本申请的权利要求书所界定的范围为准。Although the preferred and feasible embodiments of the present invention have been disclosed above, these embodiments are not intended to limit the present invention. Those of ordinary skill in the art can implement the technical features of the present invention based on the explicit or implicit contents of the present invention. All such changes are within the scope of patent protection sought by the present invention. In other words, the scope of patent protection of the present invention shall be subject to the scope defined by the claims of this application.

Claims (10)

1. A solid state disk controller, wherein the solid state disk is capable of determining whether M supply voltages supplied to a nand-type flash memory are correct, the solid state disk controller comprising:
a voltage detector for receiving the M supply voltages and generating detection results therefrom, wherein M is a positive integer;
a voltage inquiry module for outputting an inquiry signal to the nand-type flash memory to obtain a response signal from the nand-type flash memory, thereby generating an inquiry result according to the response signal, wherein the inquiry result indicates M prescribed supply voltages applicable to the nand-type flash memory; and
and the voltage judging module is used for receiving the detection result and the query result, judging whether the M supply voltages are equal to the M specified supply voltages according to the detection result and the query result, and outputting a judging result.
2. The solid state disk controller of claim 1, wherein M is an integer no less than 2.
3. The solid state disk controller of claim 1, wherein the voltage detector comprises an analog-to-digital converter for generating the detection result according to the M supply voltages.
4. The solid state disk controller of claim 1, wherein the solid state disk controller comprises a processor that executes firmware to implement at least one of the voltage query module and the voltage determination module.
5. The solid state disk controller of claim 1, wherein at least one of the voltage query module and the voltage determination module is implemented in hardware.
6. The solid state disk controller of claim 1, wherein the M supply voltages comprise an internal circuit supply voltage and an input/output interface supply voltage.
7. The solid state disk controller as claimed in claim 1, wherein the response signal includes an identification of the nand flash memory, and the voltage query module queries pre-stored data according to the identification to obtain the M specified supply voltages corresponding to the nand flash memory, thereby generating the query result.
8. The solid state disk controller as claimed in claim 1, wherein the response signal includes at least one parameter of the nor flash memory, and the voltage query module parses the at least one parameter to obtain the M specified supply voltages corresponding to the nor flash memory, thereby generating the query result.
9. A circuit controller capable of judging whether M supply voltages supplied to a controlled circuit are correct, comprising:
a voltage detector for receiving the M supply voltages and generating detection results therefrom, wherein M is a positive integer;
a voltage inquiry module for outputting an inquiry signal to the controlled circuit to obtain a response signal from the controlled circuit, thereby generating an inquiry result according to the response signal, wherein the inquiry result indicates M prescribed supply voltages applicable to the controlled circuit; and
and the voltage judging module is used for receiving the detection result and the query result, judging whether the M supply voltages are equal to the M specified supply voltages according to the detection result and the query result, and outputting a judging result.
10. The circuit controller of claim 9, wherein M is an integer not less than 2.
CN202210668588.2A 2022-06-14 2022-06-14 Solid state disk controller and circuit controller Pending CN117271399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210668588.2A CN117271399A (en) 2022-06-14 2022-06-14 Solid state disk controller and circuit controller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210668588.2A CN117271399A (en) 2022-06-14 2022-06-14 Solid state disk controller and circuit controller

Publications (1)

Publication Number Publication Date
CN117271399A true CN117271399A (en) 2023-12-22

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CN202210668588.2A Pending CN117271399A (en) 2022-06-14 2022-06-14 Solid state disk controller and circuit controller

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