CN117254343A - Packaging structure and optical signal transmitter - Google Patents

Abstract

The invention provides a packaging structure and an optical signal transmitter. The packaging structure includes circuit boards, packaging substrates, reconfigurable circuit structure layers, electronic components, heat dissipation components, and optical fiber components. The packaging substrate is disposed on the circuit board and is electrically connected to the circuit board. The reconfiguration circuit structure layer is disposed on the packaging substrate and is electrically connected to the packaging substrate. The electronic components include application-specific integrated circuit components, electronic integrated circuit components and photonic integrated circuit components, which are respectively configured on the reconfiguration circuit structure layer and are electrically connected to the packaging substrate through the reconfiguration circuit structure layer. The heat dissipation component is configured on the electronic component. The optical fiber component is configured on the packaging substrate and is electrically connected to the packaging substrate and optically connected to the photonic integrated circuit component. Compared with the conventional build-up packaging substrate or silicon through silicon interposer substrate, the packaging structure of the present invention can not only meet people's expectations and requirements for high-density packaging structures, but also has a lower cost.

Description

Packaging structure and optical signal transmitter

Technical Field

The present disclosure relates to semiconductor structures, and more particularly, to a package structure and an optical signal transmitter.

Background

In recent years, high-performance computing (high-performance computing; HPC) has become more popular and is widely used in advanced network and server applications, particularly in artificial intelligence (artificial intelligence; AI) related products requiring high data rates, increasing bandwidth, and decreasing latency. The High Density (HD) package carrier used for package structures including High Performance Computing (HPC) is increasingly expected and required, for example, for thinner line widths and pitches of metal layers and thinner dielectric layer thicknesses of reconfigured circuit layers. However, the above requirements cannot be met by the current build-up package substrate (build-up package substrate). Therefore, in order to meet the above requirements, a through-silicon via (TSV) -interposer is currently proposed to replace the build-up package substrate, but the cost of the TSV interposer is very expensive.

Disclosure of Invention

The invention is directed to a packaging structure which can solve the problems of the prior art and has lower cost.

The present invention is also directed to an optical signal transmitter having improved optical efficiency.

According to an embodiment of the invention, a package structure includes a circuit board, a package substrate, a reconfiguration line structure layer, an electronic component, a heat dissipation component, and an optical fiber component. The package substrate is disposed on the circuit board and electrically connected to the circuit board. The reconfiguration circuit structure layer is configured on the packaging substrate and is electrically connected with the packaging substrate. The electronic component comprises an application specific integrated circuit component, an electronic integrated circuit component and a photonic integrated circuit component which are respectively configured on the reconfiguration circuit structure layer and are electrically connected with the packaging substrate through the reconfiguration circuit structure layer. The photonic integrated circuit assembly includes an optical signal emitter, and the optical signal emitter includes a substrate, a plurality of vertical cavity surface emitting laser light sources, and a plurality of solder bumps. The substrate includes a plurality of pads. An array of vertical cavity surface emitting laser light sources is arranged on the substrate. The solder bump is disposed between the substrate and the VCSEL light source, wherein the VCSEL light source is electrically connected to the bonding pad of the substrate through the solder bump. The heat dissipation assembly is configured on the electronic assembly. The optical fiber component is configured on the packaging substrate and is electrically connected with the packaging substrate and the optical connection photonic integrated circuit component.

In the package structure according to the embodiment of the invention, the package structure further includes a plurality of first solder balls, a plurality of second solder balls, and a plurality of third solder balls. The first solder ball is arranged between the packaging substrate and the circuit board, wherein the packaging substrate is electrically connected with the circuit board through the first solder ball. The second solder ball is configured between the reconfiguration circuit structure layer and the packaging substrate, wherein the reconfiguration circuit structure layer is electrically connected with the packaging substrate through the second solder ball. The third solder ball is disposed between the electronic component and the reconfiguration circuit structure layer, wherein the electronic component is electrically connected with the reconfiguration circuit structure layer through the third solder ball. The size of each third solder ball is smaller than that of each second solder ball, and the size of each second solder ball is smaller than that of each first solder ball.

In an embodiment of the present invention, the package structure further includes a primer disposed between the electronic component and the reconfiguration circuit structure layer and encapsulating the third solder balls.

In the package structure according to the embodiment of the invention, the heat dissipation assembly includes a first heat sink, a second heat sink, and a thermoelectric cooling fin. The first heat sink is disposed on the asic assembly. The second heat sink is disposed on the electronic integrated circuit assembly. The thermoelectric cooling fin is disposed on the first heat sink and the second heat sink. The first heat spreader is positioned between the thermoelectric cooling fin and the asic component, and the second heat spreader is positioned between the thermoelectric cooling fin and the asic component.

In the package structure according to the embodiment of the invention, the heat dissipation assembly includes a plurality of thermoelectric cooling fins and a plurality of heat sinks. Thermoelectric cooling fins are disposed on the asic module, and the photonic ic module, respectively. The heat sinks are respectively arranged on the thermoelectric cooling fins, wherein the thermoelectric cooling fins are respectively arranged between the heat sinks and the special integrated circuit components, the electronic integrated circuit components and the photonic integrated circuit components.

In an embodiment of the invention, the heat dissipating assembly further includes a plurality of first thermal interface materials and a plurality of second thermal interface materials. The first thermal interface material is disposed between the thermoelectric cooling fin and the asic component, the electronic ic component, and the photonic ic component, respectively. The second thermal interface material is disposed between the heat sink and the thermoelectric cooling fin, respectively.

In the package structure according to the embodiment of the present invention, the photonic integrated circuit assembly further includes a photodiode. The electronic integrated circuit assembly includes a transimpedance amplifier (transimpedance amplifier) and a driver chip.

In the package structure according to the embodiment of the invention, the optical fiber assembly includes an optical fiber connector, a first optical coupler, a second optical coupler, a first optical fiber cable, and a second optical fiber cable. The optical fiber connector is arranged on the packaging substrate and is electrically connected with the packaging substrate. The first optical fiber cable passes through the optical fiber connector and is electrically connected to the photodiode through the first optical coupler. The second optical fiber cable passes through the optical fiber connector and is electrically connected to the optical signal transmitter through the second optical coupler.

In the package structure according to the embodiment of the invention, the optical signal enters the photodiode from the first optical fiber cable, and the photodiode converts the optical signal into an electrical signal, and the electrical signal is amplified by the transimpedance amplifier and then transferred to the asic component. The special integrated circuit component transmits the electric signal to the optical signal transmitter through the driving chip so as to convert the electric signal into another optical signal, and transmits the optical signal to the second optical fiber cable outwards to be transmitted to an external circuit.

According to an embodiment of the present invention, an optical signal emitter includes a substrate, a plurality of vertical cavity surface emitting laser light sources, and a plurality of solder bumps. The substrate includes a plurality of pads. An array of vertical cavity surface emitting laser light sources is arranged on the substrate. The solder bump is disposed between the substrate and the VCSEL light source, wherein the VCSEL light source is electrically connected to the bonding pad of the substrate through the solder bump.

Based on the above, in the design of the package structure of the present invention, the asic module, and the photonic ic module of the electronic module are respectively disposed on the reconfiguration circuit structure layer and electrically connected to the package substrate through the reconfiguration circuit structure layer. Compared with the prior art of using a build-up package substrate or a through silicon via interposer, the package structure of the present invention has lower cost as well as meeting the expectations and requirements of people for high-density package structures.

Drawings

FIG. 1A is a schematic cross-sectional view of a package structure according to an embodiment of the invention;

FIG. 1B is a schematic top view of the package structure of FIG. 1A;

FIG. 1C is a schematic perspective view of an optical signal transmitter in the package structure of FIG. 1A;

FIG. 1D is a schematic side view of a portion of the optical signal transmitter of FIG. 1C;

fig. 2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention.

Description of the reference numerals

10a, 10b, packaging structure;

100, a circuit board;

200, packaging a substrate;

300, reconfiguring a circuit structure layer;

patterning the circuit layer 310;

320 a dielectric layer;

330 a first pad;

340 a second pad;

350, conducting blind holes;

360, a solder mask layer;

400, electronic components;

an application specific integrated circuit component 410;

420 an electronic integrated circuit assembly;

422, driving the chip;

424 a transimpedance amplifier;

430 photonic integrated circuit components;

432, an optical signal transmitter;

433, a substrate;

434 a photodiode;

435 a vertical cavity surface emitting laser light source;

437 solder bump;

500a, 500b, a heat dissipating assembly;

510b, a first heat sink;

512. 514, 516, thermoelectric cooling sheets;

520b, a second heat sink;

522. 524, 526 heat sinks;

530b, thermoelectric cooling fin;

532. 534, 536: a first thermal interface material;

542. 544, 546, a second thermal interface material;

600, an optical fiber assembly;

610 a fiber optic connector;

a first optocoupler 620;

a second optocoupler 630;

640 a first fiber optic cable;

650 a second fiber optic cable;

710 first solder balls;

720, second solder balls;

730, third solder balls;

800, primer;

e, electric signals;

l1 is an optical signal;

l2 is another optical signal;

p is a connecting pad.

Detailed Description

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.

Fig. 1A is a schematic cross-sectional view of a package structure according to an embodiment of the invention. Fig. 1B is a schematic top view of the package structure of fig. 1A. Fig. 1C is a schematic perspective view of an optical signal transmitter in the package structure of fig. 1A. Fig. 1D is a schematic side view of a portion of the optical signal transmitter of fig. 1C. For ease of illustration, fig. 1B omits some components, such as heat sink assembly 500.

Referring to fig. 1A and fig. 1B, in the present embodiment, a package structure 10a includes a circuit board 100, a package substrate 200, a reconfiguration circuit structure layer 300, an electronic component 400, a heat dissipation component 500a and an optical fiber component 600. The package substrate 200 is disposed on the circuit board 100 and electrically connected to the circuit board 100. The reconfiguration circuit structure layer 300 is disposed on the package substrate 200 and electrically connected to the package substrate 200, wherein the package substrate 200 is located between the reconfiguration circuit structure layer 300 and the circuit board 100. The electronic assembly 400 includes an application specific integrated circuit assembly 410, an electronic integrated circuit assembly 420, and a photonic integrated circuit assembly 430, wherein the reconfiguration wire structure layer 300 is located between the electronic assembly 400 and the package substrate 200. The asic assembly 410, the electronic ic assembly 420 and the photonic ic assembly 430 are respectively disposed on the redistribution layer 300, and are electrically connected to the package substrate 200 through the redistribution layer 300. The heat dissipation assembly 500a is disposed on the electronic assembly 400 to dissipate heat of the electronic assembly 400. The optical fiber assembly 600 is disposed on the package substrate 200 and electrically connected to the package substrate 200 and the photonic integrated circuit assembly 430.

That is, the asic 410, the asic 420 and the photonic ic 430 of the present embodiment are respectively disposed on the redistribution layer 300, and are electrically connected to the package substrate 200 through the redistribution layer 300. Compared to the prior art in which the build-up package substrate or the through-silicon via interposer is used, the package structure 10a of the present embodiment can satisfy the requirements and requirements of high-density package structure, and the cost of the reconfiguration circuit structure layer 300 is lower than that of the prior art.

Referring to fig. 1A again, in the present embodiment, the redistribution layer 300 includes a plurality of patterned circuit layers 310, a plurality of dielectric layers 320, a plurality of first pads 330, a plurality of second pads 340, a plurality of conductive vias 350, and a solder mask layer 360. The patterned circuit layers 310 and the dielectric layers 320 are alternately stacked, wherein the line widths and line pitches of the patterned circuit layers 310 are, for example, 2 microns, 5 microns, and 10 microns, i.e., the patterned circuit layers 310 are fine line layers. Preferably, the wiring density of the reconfiguration wire structure layer 300 is greater than that of the package substrate 200, and the wiring density of the package substrate 200 is greater than that of the circuit board 100. The material of the dielectric layer 320 may be, for example, an organic material, glass or ceramic, but is not limited thereto. The surface of the first pad 330 is exposed and aligned with the surface of the dielectric layer 320 nearest to the electronic component 400. The second pads 340 are directly electrically connected to the patterned circuit layer 310, wherein the surfaces of the second pads 340 are exposed and aligned with the surface of the solder mask layer 360. The conductive via 350 passes through the dielectric layer 320 and is electrically connected between the patterned circuit layers 310, between the patterned circuit layers 310 and the first pads 330, and between the patterned circuit layers 310.

Furthermore, referring to fig. 1A again, the heat dissipating assembly 500a of the present embodiment includes a plurality of thermoelectric cooling fins 512, 514, 516 and a plurality of heat sinks 522, 524, 526. Thermoelectric cooling fins 512 are disposed on asic assembly 410, thermoelectric cooling fins 514 are disposed on asic assembly 420, and thermoelectric cooling fins 516 are disposed on photonic ic assembly 430. The heat spreader 522 is disposed on the thermoelectric cooling fins 512, wherein the thermoelectric cooling fins 512 are located on the heat spreader 522 and the asic assembly 410. The heat spreader 524 is disposed on the thermoelectric cooling fins 514, wherein the thermoelectric cooling fins 514 are located between the heat spreader 524 and the electronic integrated circuit assembly 420. The heat sink 526 is disposed on the thermoelectric cooling fins 516, wherein the thermoelectric cooling fins 516 are located between the heat sink 526 and the photonic integrated circuit assembly 430. Here, the thicknesses of the thermoelectric cooling fins 512, 514, 516 may be the same or different, and the thicknesses of the thermoelectric cooling fins 512, 514, 516 may be changed according to the need, which is not limited thereto.

Furthermore, the heat dissipating assembly 500a of the present embodiment further includes a plurality of first thermal interface materials 532, 534, 536 and a plurality of second thermal interface materials 542, 544, 546, thereby securing the thermoelectric cooling fins 512, 514, 516 and the heat sinks 522, 524, 526 to the electronic assembly 400. In detail, the first thermal interface material 532 is disposed between the thermoelectric cooling fin 512 and the asic component 410, and the second thermal interface material 542 is disposed between the heat spreader 522 and the thermoelectric cooling fin 512. The first thermal interface material 534 is disposed between the thermoelectric cooling fins 514 and the electronic integrated circuit assembly 420, and the second thermal interface material 544 is disposed between the heat spreader 524 and the thermoelectric cooling fins 514. The first thermal interface material 536 is disposed between the thermoelectric cooling fins 516 and the photonic integrated circuit component 430, and the second thermal interface material 546 is disposed between the heat sink 526 and the thermoelectric cooling fins 516.

Furthermore, referring to fig. 1A again, the package structure 10a of the present embodiment further includes a plurality of first solder balls 710, a plurality of second solder balls 720, and a plurality of third solder balls 730. The first solder balls 710 are disposed between the package substrate 200 and the circuit board 100, wherein the package substrate 200 is electrically connected to the circuit board 100 through the first solder balls 710. The second solder ball 720 is disposed between the redistribution circuit structure layer 300 and the package substrate 200, wherein the redistribution circuit structure layer 300 is electrically connected to the package substrate 200 through the second solder ball 720. The third solder balls 730 are disposed between the electronic component 400 and the reconfiguration circuit structure layer 300, wherein the electronic component 400 is electrically connected to the reconfiguration circuit structure layer 300 through the third solder balls 730. Here, the size of each third solder ball 730 is smaller than the size of each second solder ball, and the size of each second solder ball 720 is smaller than the size of each first solder ball 710. That is, the first solder ball 710 has the largest size and the third solder ball 730 has the smallest size, wherein the size of the third solder ball 730 is, for example, in the micrometer scale. In addition, the package structure 10a of the present embodiment further includes a primer 800 disposed between the electronic component 400 and the reconfiguration circuit structure layer 300 and encapsulating the third solder balls 730, thereby encapsulating the third solder balls 730.

Referring to fig. 1A and fig. 1B, in the present embodiment, the electronic integrated circuit assembly 420 includes a driving chip 422 and a transimpedance amplifier 424. The photonic integrated circuit component 430 includes a photodiode 434 in addition to an optical signal emitter 432. The fiber optic assembly 600 includes a fiber optic connector 610, a first optical coupler 620, a second optical coupler 630, a first fiber optic cable 640, and a second fiber optic cable 650. The optical fiber connector 610 is disposed on the package substrate 200 and electrically connected to the package substrate 200. The first fiber optic cable 640 passes through the fiber optic connector 610 and is electrically connected to the photodiode 434 through the first optical coupler 620. The second fiber optic cable 650 passes through the fiber optic connector 610 and is electrically connected to the optical signal transmitter 432 through the second optical coupler 630. That is, the package structure 10a of the present embodiment simultaneously integrates the optical and electrical components (i.e. the photonic integrated circuit component 430 and the electronic integrated circuit component 420) onto the package substrate 200, and performs signal transmission through the optical fiber component 600 and the reconfiguration circuit structure layer 300.

In detail, as shown in fig. 1B, the optical signal L1 enters the photodiode 434 from the first optical fiber cable 640, and the photodiode 434 converts the optical signal L1 into the electrical signal E, and transmits the electrical signal to the transimpedance amplifier 424 via the reconfiguration line structure layer 300 to amplify the electrical signal. The amplified electrical signals are then passed through the reconfiguration circuitry layer 300 to the asic component 410. The asic assembly 410 then transmits the electrical signal E to the optical signal transmitter 432 by reconfiguring the circuit structure layer 300 and the driving chip 422, so that the optical signal transmitter 432 converts the electrical signal E into another optical signal L2, and transmits the optical signal L2 to the second optical fiber cable 650 in the form of a laser beam to be transmitted to an external circuit (such as an interconnect).

More specifically, referring to fig. 1C and 1D, the optical signal transmitter 432 of the present embodiment includes a substrate 433, a plurality of vertical cavity surface emitting laser light sources 435, and a plurality of solder bumps 437. The substrate 433 includes a plurality of pads P. The vertical cavity surface emitting laser light sources 435 are arranged in an array on the substrate 433. The solder bump 437 is disposed between the substrate 433 and the VCSEL light source 435, wherein the VCSEL light source 435 is electrically connected to the pads P of the substrate 433 through the solder bump 437. Here, the optical signal emitter 432 is embodied as a Vertical-Cavity Surface-Emitting Laser (VCSEL).

Referring to fig. 1A again, in the process of the package structure 10a, a reconfiguration circuit structure layer 300 is provided. Next, the electronic component 400 is bonded to the redistribution layer 300 through the third solder balls 730, and the underfill 800 is filled between the electronic component 400 and the redistribution layer 300 to encapsulate the third solder balls 730. Next, a second solder ball 720 is formed on a side of the reconfiguration wire structure layer 300 relatively far from the electronic component 400. After that, the above structure is singulated to form individual structures, and then bonded to the package substrate 200 through the second solder balls 720, and assembled to the circuit board 100 through the first solder balls 710 formed on the package substrate 200. Finally, the heat dissipation module 500a is formed on the electronic component 400, thereby completing the fabrication of the package structure 10 a.

It should be noted that the following embodiments use component numbers and part of the content of the foregoing embodiments, where the same numbers are used to denote the same or similar components, and descriptions of the same technical content are omitted. For the description of the omitted parts, reference is made to the foregoing embodiments, and the following embodiments are not repeated.

Fig. 2 is a schematic cross-sectional view of a package structure according to another embodiment of the invention. Referring to fig. 1A and fig. 2, the package structure 10b of the present embodiment is similar to the package structure 10a of fig. 1A, and the difference between them is that: the heat dissipation assembly 500b of the package structure 10b of the present embodiment is different from the heat dissipation assembly 500a of the package structure 10a of fig. 1A. In detail, in the present embodiment, the heat dissipating assembly 500b includes a first heat sink 510b, a second heat sink 520b, and a thermoelectric cooling fin 530b. The first heat spreader 510b is disposed on the asic assembly 410. The second heat sink 420b is disposed on the electronic integrated circuit assembly 420. Thermoelectric cooling fins 530b are disposed on first heat spreader 510b and second heat spreader 520b, wherein first heat spreader 510b is located between thermoelectric cooling fins 530b and asic assembly 410, and second heat spreader 520b is located between thermoelectric cooling fins 530b and asic assembly 420.

In other embodiments, the heat dissipation device may be disposed on a side of the reconfiguration circuit structure layer relatively far from the electronic device, and at least corresponds to the asic device and the asic device, so as to dissipate heat from the asic device and the asic device, thereby providing the package structure with better heat dissipation performance. In addition, the heat dissipation component can also only have a heat radiator or a thermoelectric cooling sheet, and can be alternatively arranged according to the requirement, and the heat dissipation component still belongs to the scope of the invention.

In summary, in the design of the package structure of the present invention, the asic device, and the photonic integrated circuit device of the electronic device are respectively disposed on the reconfiguration circuit structure layer and electrically connected to the package substrate through the reconfiguration circuit structure layer. Compared with the prior art of using a build-up package substrate or a through silicon via interposer, the package structure of the present invention has lower cost as well as meeting the expectations and requirements of people for high-density package structures.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (10)

1. A package structure, comprising:

a circuit board;

the packaging substrate is configured on the circuit board and is electrically connected with the circuit board;

the reconfiguration circuit structure layer is configured on the packaging substrate and is electrically connected with the packaging substrate;

the electronic component comprises an application specific integrated circuit component, an electronic integrated circuit component and a photonic integrated circuit component which are respectively configured on the reconfiguration circuit structure layer and are electrically connected with the packaging substrate through the reconfiguration circuit structure layer, wherein the photonic integrated circuit component comprises an optical signal emitter, and the optical signal emitter comprises:

a substrate including a plurality of pads;

a plurality of vertical cavity surface emitting laser light sources, an array being arranged on the substrate; and

a plurality of solder bumps disposed between the substrate and the plurality of VCSEL light sources, wherein the plurality of VCSEL light sources are electrically connected to the plurality of pads of the substrate through the plurality of solder bumps;

a heat dissipation assembly disposed on the electronic assembly; and

the optical fiber component is configured on the packaging substrate, and is electrically connected with the packaging substrate and the photonic integrated circuit component.

2. The package structure of claim 1, further comprising:

the first solder balls are configured between the packaging substrate and the circuit board, wherein the packaging substrate is electrically connected with the circuit board through the first solder balls;

the second solder balls are configured between the reconfiguration circuit structure layer and the packaging substrate, wherein the reconfiguration circuit structure layer is electrically connected with the packaging substrate through the second solder balls; and

and a plurality of third solder balls arranged between the electronic component and the reconfiguration line structure layer, wherein the electronic component is electrically connected with the reconfiguration line structure layer through the plurality of third solder balls, the size of each of the plurality of third solder balls is smaller than that of each of the plurality of second solder balls, and the size of each of the plurality of second solder balls is smaller than that of each of the plurality of first solder balls.

3. The package structure of claim 2, further comprising:

and the primer is configured between the electronic component and the reconfiguration circuit structure layer and coats the third solder balls.

4. The package structure of claim 1, wherein the heat sink assembly comprises:

a first heat sink disposed on the asic assembly;

a second heat sink disposed on the electronic integrated circuit assembly; and

and the thermoelectric cooling sheet is configured on the first radiator and the second radiator, wherein the first radiator is positioned between the thermoelectric cooling sheet and the application specific integrated circuit component, and the second radiator is positioned between the thermoelectric cooling sheet and the electronic integrated circuit component.

5. The package structure of claim 1, wherein the heat sink assembly comprises:

a plurality of thermoelectric cooling fins disposed on the asic module, the electronic ic module, and the photonic ic module, respectively; and

and the plurality of heat sinks are respectively arranged on the plurality of thermoelectric cooling fins, and the plurality of thermoelectric cooling fins are respectively positioned between the plurality of heat sinks and the application specific integrated circuit assembly, the electronic integrated circuit assembly and the photonic integrated circuit assembly.

6. The package structure of claim 5, wherein the heat sink assembly further comprises:

a plurality of first thermal interface materials disposed between the plurality of thermoelectric cooling fins and the asic assembly, the electronic ic assembly, and the photonic ic assembly, respectively; and

and a plurality of second thermal interface materials respectively arranged between the plurality of heat sinks and the plurality of thermoelectric cooling fins.

7. The package structure of claim 1, wherein the photonic integrated circuit component further comprises a photodiode and the electronic integrated circuit component comprises a transimpedance amplifier and a driver chip.

8. The package structure of claim 7, wherein the optical fiber assembly comprises an optical fiber connector, a first optical coupler, a second optical coupler, a first optical fiber cable and a second optical fiber cable, the optical fiber connector is disposed on and electrically connected to the package substrate, the first optical fiber cable passes through the optical fiber connector and is electrically connected to the photodiode through the first optical coupler, and the second optical fiber cable passes through the optical fiber connector and is electrically connected to the optical signal emitter through the second optical coupler.

9. The package structure of claim 8, wherein an optical signal enters the photodiode from the first optical fiber cable, the photodiode converts the optical signal into an electrical signal, the electrical signal is amplified by the transimpedance amplifier and then transferred to the asic component, and the asic component transfers the electrical signal to the optical signal transmitter through the driver chip to convert the electrical signal into another optical signal, and the optical signal is emitted to the second optical fiber cable and then transferred to an external circuit.

10. An optical signal transmitter, comprising:

a substrate including a plurality of pads;

a plurality of vertical cavity surface emitting laser light sources, an array being arranged on the substrate; and

and the plurality of solder bumps are configured between the substrate and the plurality of vertical cavity surface emitting laser light sources, wherein the plurality of vertical cavity surface emitting laser light sources are electrically connected to the plurality of connection pads of the substrate through the plurality of solder bumps.