CN117248203A - Binding method of graphite target and backboard - Google Patents
Binding method of graphite target and backboard Download PDFInfo
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- CN117248203A CN117248203A CN202311242560.3A CN202311242560A CN117248203A CN 117248203 A CN117248203 A CN 117248203A CN 202311242560 A CN202311242560 A CN 202311242560A CN 117248203 A CN117248203 A CN 117248203A
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- graphite target
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- backboard
- binding method
- welding surface
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 123
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 123
- 239000010439 graphite Substances 0.000 title claims abstract description 123
- 238000000034 method Methods 0.000 title claims abstract description 56
- 238000003466 welding Methods 0.000 claims abstract description 116
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims abstract description 53
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 44
- 238000007747 plating Methods 0.000 claims abstract description 38
- 238000005488 sandblasting Methods 0.000 claims abstract description 38
- 230000008595 infiltration Effects 0.000 claims abstract description 17
- 238000001764 infiltration Methods 0.000 claims abstract description 17
- 238000003825 pressing Methods 0.000 claims abstract description 16
- 239000013077 target material Substances 0.000 claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000004907 flux Effects 0.000 claims abstract description 5
- 229910000679 solder Inorganic materials 0.000 claims description 36
- 238000002791 soaking Methods 0.000 claims description 22
- 239000011324 bead Substances 0.000 claims description 13
- 238000001035 drying Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 238000005422 blasting Methods 0.000 claims description 5
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000005470 impregnation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 238000004381 surface treatment Methods 0.000 abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 9
- 238000005219 brazing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000007770 graphite material Substances 0.000 description 4
- 244000137852 Petrea volubilis Species 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920002379 silicone rubber Polymers 0.000 description 3
- 239000002893 slag Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004484 Briquette Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1806—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by mechanical pretreatment, e.g. grinding, sanding
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention provides a binding method of a graphite target and a backboard, which comprises the following steps: performing sand blasting treatment on the welding surface of the graphite target; chemically plating nickel on the welded surface of the sandblasted graphite target; and heating the graphite target and the backboard, respectively and independently placing welding flux on the welding surface of the graphite target and the welding surface of the backboard for infiltration, forming a welding groove on the welding surface of the backboard, placing copper wires, attaching the welding surfaces of the graphite target and the backboard, placing a pressing block, and cooling to finish welding. According to the binding method of the graphite target and the backboard, provided by the invention, the surface treatment is carried out on the welding surface of the graphite target by adopting a sand blasting and chemical nickel plating method, the nickel plating layer has strong binding force and good uniformity, and the welding flux infiltration is facilitated; the welding combination rate of the graphite target material and the backboard is high, and the welding strength is high; low production cost, and is beneficial to mass production and improves production efficiency.
Description
Technical Field
The invention belongs to the technical field of target manufacturing, relates to a binding method of a target and a backboard, and particularly relates to a binding method of a graphite target and a backboard.
Background
The graphite material has the characteristics of high temperature resistance, corrosion resistance, self lubrication and the like, and has wide application in the fields of nuclear reactors, aviation, electrode materials, drill bits for special purposes, corrosion-resistant crucibles for chemical experiments, semiconductor materials and the like. High purity graphite targets are commonly used in the semiconductor field as substrates for silicon carbide in chips. When the graphite target is used in sputtering, the graphite target and the back plate are required to be connected together in a brazing mode.
CN115770922a discloses a method for brazing a graphite target, which adopts a magnetron sputtering method to plate a layer of metal film on the welding surface of the graphite target, increases the wettability of solder on the surface of the graphite target, and then brazes the graphite target and the back plate, thereby improving the welding combination rate of the graphite target and the back plate and avoiding the cracking of the graphite target caused by the brazing process. The magnetron sputtering process has high cost, the film layer of the coating film is thinner, the welding strength of the target material is not high, and the risk of desoldering exists under a specific use environment.
CN116275337a discloses a method for welding a graphite target, the method comprises the steps of hot-pressing a welding surface of a graphite target blank to form an infiltration layer, then using ultrasonic waves to infiltrate the welding surface of a back plate and the infiltration layer, and then brazing and welding the graphite target blank and the back plate to obtain the graphite target. Graphite material has poor wettability with solder, and the bonding strength is limited only by ultrasonic infiltration of solder treatment on the surface.
Therefore, in order to overcome the shortcomings of the prior art, a binding method of a graphite target and a back plate needs to be provided.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to provide a binding method of a graphite target and a backboard, which improves the solder wettability and welding performance of the graphite target and improves the welding binding force of the target and the backboard.
To achieve the purpose, the invention adopts the following technical scheme:
the invention provides a binding method of a graphite target and a backboard, which comprises the following steps:
(1) Performing sand blasting treatment on the welding surface of the graphite target;
(2) Chemically plating nickel on the welded surface of the sandblasted graphite target;
(3) And heating the graphite target and the backboard, respectively and independently placing welding flux on the welding surface of the graphite target and the welding surface of the backboard for infiltration, forming a welding groove on the welding surface of the backboard, placing copper wires, attaching the welding surfaces of the graphite target and the backboard, placing a pressing block, and cooling to finish welding.
According to the binding method provided by the invention, the wettability of the graphite target is improved by carrying out sand blasting and nickel electroplating treatment on the welding surface of the graphite target, and then the welding strength of the target and the backboard is improved by combining the brazing and the backboard, so that the desoldering risk of the target in the use process is reduced.
The connection mode of graphite and the backboard made of metal materials generally adopts brazing, mainly because graphite is easy to oxidize at high temperature, the heating temperature of brazing is low, the influence of brazing on the structure and performance of a base metal is small, and welding deformation is small. However, graphite is a nonmetallic material, and is not bonded by covalent bonds, unlike metals, and has a low surface energy, so that it has poor surface wettability, most of the conventional solders are difficult to wet, and the strength is usually not high or the solder is not completely welded during soldering, and in addition, the tensile strength of graphite is low, cracks are extremely easy to occur, and the strength of the welded joint is reduced. After the sand blasting treatment is carried out on the surface of the graphite target, a nickel layer is formed on the surface of the graphite in a chemical nickel plating mode, and compared with a sputtering film plating mode, the bonding force between the nickel layer and the graphite is enhanced, the uniformity of the film layer is good, and the infiltration of solder is facilitated.
Preferably, the pressure of the blasting in step (1) is 4-6kg, for example, 4kg, 4.5kg, 5kg, 5.5kg or 6kg, but not limited to the values recited, and other values not recited in the range are equally applicable.
Preferably, the blast of step (1) comprises glass beads.
Preferably, the glass beads have a particle size in the range of 100-150 mesh, for example, 100 mesh, 110 mesh, 120 mesh, 130 mesh, 140 mesh, or 150 mesh, but are not limited to the recited values, and other non-recited values within the range are equally applicable.
The glass beads have smooth surfaces and uniform sizes, the contact area between the spraying material with the optimal particle size model adopted as the spraying sand and the spraying sand surface is small, the target surface is not easy to damage, and the stress elimination is more uniform.
Preferably, the nickel plating layer of the nickel plating in the step (2) has a thickness of 20 to 50. Mu.m, for example, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm or 50 μm, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
The nickel plating layer can generate good infiltration by adopting 5-10 mu m generally, the wettability of the graphite material surface to the solder is poor, the plating layer on the graphite surface needs to reach 20-50 mu m, the bonding force between the thicker nickel plating layer and the back plate is stronger, and the nickel plating layer is not easy to separate when in sputtering use.
Preferably, the heating rate of step (3) is 1-2 ℃/min, for example, 1 ℃/min, 1.2 ℃/min, 1.5 ℃/min, 1.8 ℃/min or 2 ℃/min, but is not limited to the recited values, and other values not recited in the numerical range are equally applicable.
Preferably, the heating process in the step (3) includes a first heat treatment, a second heat treatment and a third heat treatment, which are sequentially performed at a higher temperature.
Preferably, the temperature of the first heat treatment is 90-110 ℃, for example, 90 ℃, 95 ℃, 100 ℃, 105 ℃ or 110 ℃, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the time of the first heat treatment is 10-15min, for example, 10min, 11min, 12min, 13min, 14min or 15min, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the temperature of the second heat treatment is 150-170 ℃, for example, 150 ℃, 155 ℃, 160 ℃, 165 ℃, or 170 ℃, but is not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the second heat treatment is performed for 10-15min, for example, 10min, 11min, 12min, 13min, 14min or 15min, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the temperature of the third heat treatment is 200-220 ℃, for example, 200 ℃, 205 ℃, 210 ℃, 215 ℃ or 220 ℃, but not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the method of infiltration of step (3) comprises ultrasonic infiltration.
Preferably, the ultrasonic frequency of the ultrasonic infiltration is 15-20kHz, such as 15kHz, 16kHz, 17kHz, 18kHz, 19kHz or 20kHz, but not limited to the recited values, and other non-recited values within the numerical range are equally applicable.
Preferably, the time of the soaking in the step (3) is 5-15min, for example, may be 5min, 8min, 10min, 12min or 15min, but is not limited to the recited values, and other non-recited values in the range of values are equally applicable.
Preferably, the diameter of the copper wire in step (3) is 0.2-0.5mm, for example, 0.2mm, 0.3mm, 0.4mm or 0.5mm, but not limited to the values recited, and other values not recited in the range of values are equally applicable.
Preferably, the pressure of the briquette in step (3) is 0.3-0.5MPa, for example, 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa or 0.5MPa, but not limited to the values listed, and other values not listed in the numerical range are equally applicable.
As the preferred technical scheme of the binding method provided by the invention, the binding method comprises the following steps:
(1) Ultrasonic cleaning is carried out on the welding surface of the graphite target material, drying is carried out at 70-80 ℃, sand blasting treatment is carried out after drying, glass beads with the particle size of 100-150 meshes are used for sand blasting, and the pressure used for sand blasting is 4-6kg;
(2) After the sand blasting is finished, ultrasonically cleaning the welding surface of the graphite target, and then carrying out chemical nickel plating, wherein the thickness of a nickel plating layer is 20-50 mu m;
(3) Heating the graphite target and the backboard to 90-110 ℃ at a speed of 1-2 ℃/min, preserving heat for 10-15min, heating to 150-170 ℃ and preserving heat for 10-15min, heating to 200-220 ℃ at last, respectively and independently placing molten solder on the welding surface of the graphite target and the welding surface of the backboard, soaking by using ultrasonic waves, wherein the soaking time of the graphite target is 5-10min, the soaking time of the backboard is 10-15min, then placing copper wires with the diameter of 0.2-0.5mm in a welding groove on the welding surface of the backboard, attaching the welding surfaces of the graphite target and the backboard, placing a pressing block, wherein the pressure of the pressing block is 0.3-0.5MPa, and cooling to finish welding.
Compared with the prior art, the invention has the beneficial effects that:
according to the binding method of the graphite target and the backboard, provided by the invention, the surface treatment is carried out on the welding surface of the graphite target by adopting a sand blasting and chemical nickel plating method, the nickel plating layer has strong binding force and good uniformity, and the welding flux infiltration is facilitated; the welding combination rate of the graphite target material and the backboard is high, and the welding strength is high; low production cost, and is beneficial to mass production and improves production efficiency.
Detailed Description
The technical scheme of the invention is further described by the following specific embodiments.
Example 1
The embodiment provides a binding method of a graphite target and a back plate, which comprises the following steps:
(1) Wiping the welding surface of the graphite target material with ethanol, then placing the welding surface in pure water, cleaning the welding surface for 10 minutes by ultrasonic vibration, drying the welding surface in an oven at 75 ℃ for 5 minutes after cleaning, performing sand blasting after drying, shielding the other surfaces of the target material except the welding surface needing sand blasting by using an adhesive tape before sand blasting, starting sand blasting after shielding, wherein the spraying material adopts glass beads with the particle size of 120 meshes, and the pressure is 5kg;
(2) After the sand blasting is finished, ultrasonically cleaning the welding surface of the graphite target material by pure water for 5min, removing foreign matters carried in during surface sand blasting, then placing graphite into a nickel plating tank for chemical nickel plating, wherein the thickness of a nickel layer is 40 mu m, and drying by an air gun after the nickel plating is finished;
(3) Placing a graphite target and a backboard in a heating table for heating, polishing the welding surface of the backboard by sand paper and wiping the welding surface by ethanol, heating the heating table to 100 ℃ at a heating rate of 1.5 ℃/min for 10min, heating to 160 ℃ for 15min, heating to 210 ℃, respectively placing molten solder on the welding surface of the graphite target and the welding surface of the backboard, soaking by using ultrasonic welding equipment, wherein the ultrasonic frequency is 15kHz, the soaking time of the graphite target is 8min, the soaking time of the graphite target is consistent with the color of the molten solder, the soaking time of the backboard is 12min, the soaking time of the graphite target is consistent with the color of the molten solder, a solder groove with the depth of 0.3mm is processed on the welding surface of the backboard, solder slag in the clean solder groove is removed by a scraper, copper wires with the diameter of 0.3mm are placed in the solder groove, the welding surface of the graphite target and the welding surface of the backboard are scraped by the scraper, the graphite target and the backboard are bonded together, a silicon rubber pad is placed on the graphite target, a pressing block is placed on the graphite target, the pressing block is generated, after the welding is completed, the pressing block is cooled, and binding is completed.
Example 2
The embodiment provides a binding method of a graphite target and a back plate, which comprises the following steps:
(1) Wiping the welding surface of the graphite target material with ethanol, then placing the welding surface in pure water, cleaning the welding surface for 10 minutes by ultrasonic vibration, drying the welding surface in an oven at 70 ℃ for 5 minutes after cleaning, performing sand blasting after drying, shielding the other surfaces of the target material except the welding surface needing sand blasting by using an adhesive tape before sand blasting, starting sand blasting after shielding, wherein the spraying material adopts glass beads with the particle size of 100 meshes, and the pressure is 4kg;
(2) After the sand blasting is finished, ultrasonically cleaning the welding surface of the graphite target material by pure water for 5min, removing foreign matters carried in during surface sand blasting, then placing graphite into a nickel plating tank for chemical nickel plating, wherein the thickness of a nickel layer is 50 mu m, and drying by an air gun after the nickel plating is finished;
(3) Placing a graphite target and a backboard in a heating table for heating, polishing the welding surface of the backboard by sand paper and wiping the welding surface by ethanol, heating the heating table to 90 ℃ at a heating rate of 1 ℃/min for 10min, heating to 150 ℃ for 15min, heating to 200 ℃, respectively placing molten solder on the welding surface of the graphite target and the welding surface of the backboard, soaking by using ultrasonic welding equipment, wherein the ultrasonic frequency is 15kHz, the soaking time of the graphite target is 10min, the soaking time of the graphite target is consistent with the color of the molten solder, the soaking time of the backboard is 15min, the soaking time of the graphite target is consistent with the color of the molten solder, a solder groove with the depth of 0.2mm is processed on the welding surface of the backboard, the solder slag in the clean solder groove is removed by a scraper, copper wires with the diameter of 0.2mm are placed in the solder groove, the welding surface of the graphite target and the welding surface of the backboard are scraped by the scraper, the graphite target and the backboard are bonded together, a silicon rubber pad is placed on the graphite target, a pressing block is placed on the graphite pad, the pressing block is generated, the pressing block is cooled after the welding is completed, and the binding is completed.
Example 3
The embodiment provides a binding method of a graphite target and a back plate, which comprises the following steps:
(1) Wiping the welding surface of the graphite target material with ethanol, then placing the welding surface in pure water, cleaning the welding surface for 10 minutes by ultrasonic vibration, drying the welding surface in an oven at 80 ℃ for 5 minutes after cleaning, performing sand blasting after drying, shielding the other surfaces of the target material except the welding surface needing sand blasting by using an adhesive tape before sand blasting, starting sand blasting after shielding, wherein the spraying material adopts glass beads with the particle size of 150 meshes, and the pressure is 6kg;
(2) After the sand blasting is finished, ultrasonically cleaning the welding surface of the graphite target material by pure water for 5min, removing foreign matters carried in during surface sand blasting, then placing graphite into a nickel plating tank for chemical nickel plating, wherein the thickness of a nickel layer is 20 mu m, and drying by an air gun after the nickel plating is finished;
(3) Placing a graphite target and a backboard in a heating table for heating, polishing the welding surface of the backboard by sand paper and wiping the welding surface by ethanol, heating the heating table to 110 ℃ at a heating rate of 2 ℃/min for 10min, heating to 170 ℃ for 15min, heating to 220 ℃, respectively placing molten solder on the welding surface of the graphite target and the welding surface of the backboard, soaking by using ultrasonic welding equipment, wherein the ultrasonic frequency is 20kHz, the soaking time of the graphite target is 5min, the soaking time of the graphite target is consistent with the color of the molten solder, the soaking time of the backboard is 10min, the soaking time of the graphite target is consistent with the color of the molten solder, a solder groove with the depth of 0.5mm is processed on the welding surface of the backboard, the solder slag in the clean solder groove is removed by a scraper, copper wires with the diameter of 0.5mm are placed in the solder groove, the welding surface of the graphite target and the welding surface of the backboard are scraped by the scraper, the graphite target and the backboard are bonded together, a silicon rubber pad is placed on the graphite target, a pressing block is placed on the graphite pad, the pressing block is generated, the pressing block is cooled after the welding is completed, and the binding is completed.
Example 4
The embodiment provides a binding method of a graphite target and a back plate, and compared with the embodiment 1, the method controls the frequency of ultrasonic waves in the step (3) to be 10kHz, and the rest is the same as the embodiment 1.
Example 5
The embodiment provides a binding method of a graphite target and a back plate, and compared with the embodiment 1, the method controls the frequency of ultrasonic waves in the step (3) to be 30kHz, and the rest is the same as the embodiment 1.
Example 6
Compared with the embodiment 1, the embodiment provides a binding method of a graphite target and a back plate, wherein the particle size of glass beads used for sand blasting in the step (1) is controlled to be 180 meshes, and the rest is the same as the embodiment 1.
Example 7
The present embodiment provides a method for binding a graphite target with a back plate, and compared with embodiment 1, the method controls the particle size of glass beads used for sand blasting in step (1) to be 80 mesh, and the rest is the same as embodiment 1.
Example 8
Compared with the embodiment 1, the embodiment provides a binding method of a graphite target and a back plate, wherein the heating rate of the step (3) is controlled to be 3 ℃/min, and the rest is the same as the embodiment 1.
Example 9
Compared with the embodiment 1, the embodiment provides a binding method of a graphite target and a back plate, wherein the heating process of the control step (3) is directly heated to 210 ℃, and the rest is the same as the embodiment 1.
Example 10
The present embodiment provides a binding method for graphite target and back plate, and compared with embodiment 1, the thickness of the nickel plating layer in the step (2) is controlled to be 15 μm, and the rest is the same as embodiment 1.
Comparative example 1
The comparative example provides a method of binding a graphite target to a backing plate, without electroless nickel plating of step (2) as compared to example 1, and the remainder is the same as example 1.
Comparative example 2
The comparative example provides a binding method of a graphite target and a back plate, and compared with the embodiment 1, the step (2) adopts a magnetron sputtering method to plate nickel on the welding surface of the graphite target, and the rest is the same as the embodiment 1.
Comparative example 3
This comparative example provides a method of binding a graphite target to a backing plate, without performing step (1) grit blasting, as compared to example 1, with the remainder being the same as example 1.
TABLE 1
In the table "-" indicates no data.
As can be seen from table 1:
the binding method provided by the invention can ensure that the welding combination rate of the graphite target and the backboard is more than 98.5%, especially up to 99.7%, the welding strength is more than 5.0MPa, especially up to 6.0MPa, and the welding risk in the use process of the target is reduced.
In example 4 and example 5, compared with example 1, the use of ultrasonic frequency not preferred in the present invention resulted in poor solder wetting effect, decreasing the soldering strength; in examples 6 and 7, the particle diameter of the glass beads used for blasting, which is not preferable in the present invention, was used to reduce the blasting effect on the welded surface, and the bonding strength of the nickel plating layer was affected, and thus the welding strength was reduced; in the embodiment 8 and the embodiment 9, the excessive heating rate is adopted or the heat preservation stage is not carried out in the heating process, so that the internal temperature of the graphite target blank is uneven, and the target blank is cracked in the production process and cannot be used; in example 10, the nickel plating layer had a low thickness, and the graphite material had poor solder wettability, and if the nickel plating layer had a low thickness, the weld strength was difficult to meet the use requirements.
Compared with the example 1, the chemical nickel plating is not carried out in the comparative example 1, the solder is difficult to directly infiltrate on the graphite surface, and the welding effect is obviously reduced; in comparative example 2, the bonding force between the nickel layer and graphite is lower and the uniformity is inferior to that of the electroless plating, the infiltration effect of the solder is reduced, and the welding strength is reduced; in comparative example 3, the binding force between the nickel plating layer and graphite was reduced and the welding strength was lowered without sandblasting.
In summary, according to the binding method of the graphite target and the backboard provided by the invention, the surface treatment is carried out on the welding surface of the graphite target by adopting a method of sand blasting and chemical nickel plating, the binding force of a nickel plating layer is strong, the uniformity is good, and the infiltration of solder is facilitated; the welding combination rate of the graphite target material and the backboard is improved, and the welding strength is improved; low production cost, and is beneficial to mass production and improves production efficiency.
While the foregoing is directed to embodiments of the present invention, other and further details of the invention may be had by the present invention, it should be understood that the foregoing description is merely illustrative of the present invention and that no limitations are intended to the scope of the invention, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the invention.
Claims (10)
1. The binding method of the graphite target and the backboard is characterized by comprising the following steps of:
(1) Performing sand blasting treatment on the welding surface of the graphite target;
(2) Carrying out chemical nickel plating on the welded surface of the graphite target after sand blasting;
(3) And heating the graphite target and the backboard, respectively and independently placing welding flux on the welding surface of the graphite target and the welding surface of the backboard for infiltration, forming a welding groove on the welding surface of the backboard, placing copper wires, attaching the welding surfaces of the graphite target and the backboard, placing a pressing block, and cooling to finish welding.
2. The binding method according to claim 1, wherein the blasting pressure of step (1) is 4-6kg;
preferably, the blast of step (1) comprises glass beads;
preferably, the glass beads have a particle size in the range of 100-150 mesh.
3. The binding method according to claim 1 or 2, wherein the electroless nickel plating layer of step (2) has a thickness of 20 to 50 μm.
4. A binding method according to any one of claims 1 to 3, wherein the heating in step (3) is at a rate of 1-2 ℃/min.
5. The binding method according to any one of claims 1 to 4, wherein the heating process of step (3) includes a first heat treatment, a second heat treatment, and a third heat treatment performed sequentially at an elevated temperature;
preferably, the temperature of the first heat treatment is 90-110 ℃ and the time is 10-15min;
preferably, the temperature of the second heat treatment is 150-170 ℃ and the time is 10-15min;
preferably, the temperature of the third heat treatment is 200-220 ℃.
6. The binding method according to any one of claims 1 to 5, wherein the method of impregnating in step (3) comprises ultrasonic impregnation;
preferably, the ultrasonic frequency of the ultrasonic infiltration is 15-20kHz.
7. The binding method according to any one of claims 1 to 6, wherein the time of the infiltration in step (3) is 5 to 15min.
8. A binding method according to any one of claims 1 to 7, wherein the copper wire of step (3) has a diameter of 0.2 to 0.5mm.
9. The binding method according to any one of claims 1 to 8, wherein the pressure of the compact of step (3) is 0.3 to 0.5MPa.
10. Binding method according to any of claims 1-9, characterized in that the binding method comprises the steps of:
(1) Ultrasonic cleaning is carried out on the welding surface of the graphite target material, drying is carried out at 70-80 ℃, sand blasting treatment is carried out after drying, glass beads with the particle size of 100-150 meshes are used for sand blasting, and the pressure used for sand blasting is 4-6kg;
(2) After the sand blasting is finished, ultrasonically cleaning the welding surface of the graphite target, and then carrying out chemical nickel plating, wherein the thickness of a nickel plating layer is 20-50 mu m;
(3) Heating the graphite target and the backboard to 90-110 ℃ at a speed of 1-2 ℃/min, preserving heat for 10-15min, heating to 150-170 ℃ and preserving heat for 10-15min, heating to 200-220 ℃ at last, respectively and independently placing molten solder on the welding surface of the graphite target and the welding surface of the backboard, soaking by using ultrasonic waves, wherein the soaking time of the graphite target is 5-10min, the soaking time of the backboard is 10-15min, then placing copper wires with the diameter of 0.2-0.5mm in a welding groove on the welding surface of the backboard, attaching the welding surfaces of the graphite target and the backboard, placing a pressing block, wherein the pressure of the pressing block is 0.3-0.5MPa, and cooling to finish welding.
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| CN202311242560.3A CN117248203A (en) | 2023-09-25 | 2023-09-25 | Binding method of graphite target and backboard |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113579393A (en) * | 2021-08-19 | 2021-11-02 | 宁波江丰电子材料股份有限公司 | Method for brazing niobium target and copper back plate |
| CN115041767A (en) * | 2022-07-07 | 2022-09-13 | 宁波江丰电子材料股份有限公司 | Method for binding ITO target and Cu backboard |
| CN115770922A (en) * | 2022-12-01 | 2023-03-10 | 宁波江丰电子材料股份有限公司 | Brazing method of graphite target |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113579393A (en) * | 2021-08-19 | 2021-11-02 | 宁波江丰电子材料股份有限公司 | Method for brazing niobium target and copper back plate |
| CN115041767A (en) * | 2022-07-07 | 2022-09-13 | 宁波江丰电子材料股份有限公司 | Method for binding ITO target and Cu backboard |
| CN115770922A (en) * | 2022-12-01 | 2023-03-10 | 宁波江丰电子材料股份有限公司 | Brazing method of graphite target |
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