CN117239541A - Driving circuit, driving method and laser equipment - Google Patents
Driving circuit, driving method and laser equipment Download PDFInfo
- Publication number
- CN117239541A CN117239541A CN202210637700.6A CN202210637700A CN117239541A CN 117239541 A CN117239541 A CN 117239541A CN 202210637700 A CN202210637700 A CN 202210637700A CN 117239541 A CN117239541 A CN 117239541A
- Authority
- CN
- China
- Prior art keywords
- transistor
- resistor
- pulse
- voltage
- driving circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000007704 transition Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 208000028659 discharge Diseases 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
The present disclosure provides a driving circuit suitable for a laser, the driving circuit being connected with the laser, the driving circuit comprising: a source follower, a third resistor, a first transistor, and a second transistor; the source follower comprises a third transistor, a source electrode of the third transistor is connected with a first end of a third resistor, a drain electrode of the third transistor is connected with a power supply, and a grid electrode of the third transistor is used for receiving a first input signal; the second end of the third resistor is connected with the grid electrode of the first transistor; the grid electrode of the first transistor is also connected with the drain electrode of the second transistor, the drain electrode of the first transistor is connected with the cathode of the laser, the source electrode of the first transistor is grounded, and the first transistor is used for driving the laser; the grid electrode of the second transistor is used for receiving a pulse input signal, and the source electrode of the second transistor is grounded; the source follower, the third resistor and the second transistor are used to control the state of the first transistor. The present disclosure also provides a driving method and a laser apparatus.
Description
Technical Field
The disclosure relates to the technical field of laser radars, and in particular relates to a driving circuit, a driving method and laser equipment.
Background
The laser radar is a short term of laser detection and ranging system, which is based on classical radar principle, and detects the characteristic quantities such as the position, the speed and the like of a target by emitting laser beams through laser pulses. The laser radar system is generally composed of a laser transmitter, a light receiver, an information processing system and the like, and the specific principle is that the laser transmitter converts electric pulses into optical pulses to be transmitted, and the optical receiver restores the optical pulses reflected from the target into the electric pulses and compares the electric pulses with a transmitting signal so as to detect, track and identify the target. Assuming that the laser radar light pulse reaches the target with a propagation distance d and is then reflected back to the detector for subsequent processing, the time between pulse transmission and reception is t=2d/c, where c is the propagation velocity of the light in air, which is approximately 3.0x10 5 km/s. By measuring the propagation time t, the target distance can be determined. This technique is also known as TOF (time of flight) detection.
The laser of a lidar is driven by a dedicated circuit that is capable of providing a large amount of current in a short time, one of the most common circuit topologies for implementing such a driver being a capacitor discharge resonant circuit. However, in an actual laser radar system, if the traditional silicon-based MOSFET switching device has a low on-resistance, the device size is relatively large, and the parasitic capacitance thereof makes the charging time of the switching power tube too long; and the push-pull grid driving structure can not rapidly turn on and off the power switch device, so that the output pulse width is caused, and the main performance indexes such as the ranging resolution of the laser radar are limited.
Disclosure of Invention
In view of the above, the present disclosure provides a driving circuit, a driving method, and a laser apparatus.
According to a first aspect of the present disclosure, there is provided a driving circuit adapted for use with a laser, the driving circuit being connected to the laser, the driving circuit comprising: a source follower, a third resistor, a first transistor, and a second transistor;
the source follower comprises a third transistor, a source electrode of the third transistor is connected with a first end of a third resistor, a drain electrode of the third transistor is connected with a power supply, and a grid electrode of the third transistor is used for receiving a first input signal;
the second end of the third resistor is connected with the grid electrode of the first transistor;
the grid electrode of the first transistor is also connected with the drain electrode of the second transistor, the drain electrode of the first transistor is connected with the cathode of the laser, the source electrode of the first transistor is grounded, and the first transistor is used for driving the laser;
the grid electrode of the second transistor is used for receiving a pulse input signal, and the source electrode of the second transistor is grounded;
the source follower, the third resistor and the second transistor are used to control the state of the first transistor.
Optionally, the source follower is configured to apply a voltage to the gate of the first transistor and the drain of the second transistor;
the second transistor is used for switching to a conducting state when the pulse input signal is a forward pulse;
the third resistor and the second transistor are used for controlling the voltage of the grid electrode of the first transistor, and when the second transistor is in a conducting state, the voltage of the grid electrode of the first transistor is smaller than a threshold value, so that the first transistor is in a pre-conducting state.
Optionally, the source follower is configured to apply a voltage to the gate of the first transistor and the drain of the second transistor;
the second transistor is used for switching to an off state when the pulse input signal is a negative pulse;
the third resistor and the second transistor are used for controlling the voltage of the grid electrode of the first transistor, and when the second transistor is in an off state, the voltage of the grid electrode of the first transistor is larger than a threshold value, so that the first transistor is in an on state.
Optionally, the source follower is configured to apply a voltage to the gate of the first transistor and the drain of the second transistor;
the second transistor is used for switching to a conducting state when the pulse input signal is changed from negative pulse to positive pulse;
the third resistor and the second transistor are used for controlling the voltage of the grid electrode of the first transistor, and when the pulse input signal received by the second transistor is converted from negative pulse to positive pulse, the voltage of the grid electrode of the first transistor is smaller than a threshold value, so that the first transistor is in a pre-conduction state.
Optionally, the source follower further comprises:
the first end of the first resistor is connected with a power supply, and the second end of the first resistor is connected with the grid electrode of the third transistor;
the first end of the second resistor is connected with the second end of the first resistor and the grid electrode of the third transistor, and the second end of the second resistor is grounded;
the first resistor and the second resistor are used for controlling the voltage of the gate of the third transistor.
Optionally, the driving circuit further includes a fourth transistor;
the drain electrode of the fourth transistor is connected with the grid electrode of the third transistor, the grid electrode of the fourth transistor is used for receiving an enabling signal, and the source electrode of the fourth transistor is grounded;
the fourth transistor is used for controlling the voltage of the gate of the third transistor.
Optionally, the second transistor is configured to switch to an on state when the pulse input signal is a positive pulse, and to switch to an off state when the pulse input signal is a negative pulse;
the fourth transistor is used for receiving an enabling signal when the input signal received by the second transistor is converted from a negative pulse to a positive pulse and is switched to an on state, so that the voltage of the grid electrode of the third transistor is smaller than a threshold value, and the third transistor is in an off state;
the second transistor is used for switching to an on state when the pulse input signal is changed from a negative pulse to a positive pulse, so that the voltage of the grid electrode of the first transistor is smaller than a threshold value, and the first transistor is in an off state.
Optionally, the first transistor, the second transistor, the third transistor, and the fourth transistor comprise N-type/enhancement GaN high electron mobility transistors.
According to a second aspect of the present disclosure, there is provided a driving method applied to a driving circuit adapted for a laser, the driving circuit being connected to the laser, the driving circuit comprising: a first transistor, a second transistor, a third resistor and a source follower, the method comprising:
controlling the state of the first transistor through the source follower, the third resistor and the second transistor;
the laser is driven by the first transistor.
According to a third aspect of the present disclosure, there is provided a driving apparatus comprising a laser and a driving circuit as described above;
the laser is connected with the driving circuit.
Drawings
In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1 schematically illustrates a schematic diagram of a driving circuit provided by an embodiment of the present disclosure;
fig. 2 schematically illustrates an operation principle of a driving circuit according to an embodiment of the present disclosure;
fig. 3 schematically illustrates an operation principle of a driving circuit in a precharge phase according to an embodiment of the present disclosure;
fig. 4 schematically illustrates a schematic diagram of a driving circuit according to an embodiment of the present disclosure in a charging stage;
fig. 5 schematically illustrates a schematic diagram of a driving circuit according to an embodiment of the present disclosure in a discharge stage;
FIG. 6 schematically illustrates a schematic diagram of another driving circuit provided by an embodiment of the present disclosure;
fig. 7 schematically illustrates a schematic diagram of another driving circuit according to an embodiment of the present disclosure in a charging stage;
FIG. 8 schematically illustrates a schematic diagram of another driving circuit provided by an embodiment of the present disclosure;
FIG. 9 schematically illustrates a comparison of pulse time of a driving circuit with pulse time of a conventional driving structure according to an embodiment of the present disclosure; and
fig. 10 schematically illustrates a flow chart of a driving method according to an embodiment of the disclosure.
Reference numerals illustrate:
1 a first resistor; 2 a second resistor; 3 a third resistor; a 10 source follower; a first transistor 100; a second transistor 200; 300 a third transistor; 400 fourth transistor; VDD supply voltage; VBUS supply voltage; an EN enable signal; v (V) in A pulse input signal; v (V) M3g A third transistor gate voltage; v (V) M1g A first transistor gate voltage; v (V) th1 A first transistor threshold voltage; v (V) M3s A third transistor source voltage; d1 laser; c (C) gs And a gate-source capacitance.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Where expressions like at least one of "A, B and C, etc. are used, the expressions should generally be interpreted in accordance with the meaning as commonly understood by those skilled in the art (e.g.," a system having at least one of A, B and C "shall include, but not be limited to, a system having a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.). Where a formulation similar to at least one of "A, B or C, etc." is used, in general such a formulation should be interpreted in accordance with the ordinary understanding of one skilled in the art (e.g. "a system with at least one of A, B or C" would include but not be limited to systems with a alone, B alone, C alone, a and B together, a and C together, B and C together, and/or A, B, C together, etc.). It should also be appreciated by those skilled in the art that virtually any disjunctive word and/or phrase presenting two or more alternative items, whether in the description, claims, or drawings, should be understood to contemplate the possibilities of including one of the items, either of the items, or both. For example, the phrase "a or B" should be understood to include the possibility of "a" or "B", or "a and B".
Fig. 1 schematically illustrates a schematic diagram of a driving circuit according to an embodiment of the present disclosure. Fig. 2 schematically illustrates an operation principle of a driving circuit according to an embodiment of the present disclosure. Fig. 9 schematically illustrates a comparison of pulse time of a driving circuit and pulse time of a conventional driving structure according to an embodiment of the present disclosure.
As shown in fig. 1, in an embodiment of the disclosure, the driving circuit is applicable to a laser, where the driving circuit is connected to the laser, and the driving circuit includes: a source follower 10, a third resistor 3, a first transistor 100 and a second transistor 200; the source follower 10 includes a third transistor 300, a source of the third transistor 300 is connected to the first end of the third resistor 3, a drain of the third transistor 300 is connected to a power source, and a gate of the third transistor 300 is configured to receive the first input signal; a second terminal of the third resistor 3 is connected to the gate of the first transistor 100; the gate of the first transistor 100 is also connected to the drain of the second transistor 200, the drain of the first transistor 100 is connected to the cathode of the laser, the source of the first transistor 100 is grounded, and the first transistor 100 is used for driving the laser; the gate of the second transistor 200 is used for receiving a pulse input signal, and the source of the second transistor 200 is grounded; the source follower 10, the third resistor 3 and the second transistor 200 are used to control the state of the first transistor 100.
In the present embodiment, the first transistor 100, the second transistor 200, and the third transistor 300 may be N-type/enhancement type GaN high electron mobility transistors. The gate of the first transistor 100 is electrically coupled to the cathode of the third resistor 3 and the drain of the second transistor 200, the drain of the first transistor 100 is electrically coupled to the cathode of the laser, and the source of the first transistor 100 is grounded; the gate of the second transistor 200 is used for receiving the pulse input signal V in The drain of the second transistor 200 is electrically coupled to the cathode of the third resistor 3 and the gate of the first transistor 100, and the source of the second transistor 200 is grounded; the output end of the source follower 10 is electrically coupled to the positive electrode of the third resistor 3; the source of the third transistor 300 is electrically coupled to the positive electrode of the third resistor 3, and the drain of the third transistor 300 is connected to the power supply; wherein the source follower 10, the third resistor 3 and the second transistor 200 are used to control the state of the first transistor 100. The states of the first transistor 100 include a pre-conductive state and a conductive state. The driving circuit provided by the present disclosure adopts a source follower structure to provide a sink current for the first transistor. Before the first transistor generates a current pulse, the first transistor is placed in a pre-on state (as shown in fig. 2), so as to shorten the time for the pulse current to reach the peak value and reduce the pulse rising delay, refer to fig. 9, where a is the pulse time of the driving circuit provided by the present disclosure, and b is the pulse time of the conventional driving structure. The driving circuit provided by the disclosure further utilizes the positive feedback effect caused by the instantaneous load change of the source follower to shorten the turn-off time of the first transistor and reduce the pulse falling time delay, so that the switching speed of the first transistor is accelerated, narrower current pulses can be provided for a laser, and the range finding resolution of a laser radar and other main performance indexes are improved.
In order to facilitate understanding of the technical solutions of the present disclosure, the working principle of the driving circuit provided in the present disclosure will be described in detail below with reference to fig. 3 to 5 and embodiments.
Fig. 3 schematically illustrates an operation principle of a driving circuit in a precharge phase according to an embodiment of the present disclosure.
Referring to fig. 2 and 3 together, in one embodiment of the present disclosure, the source follower 10 is used to apply a voltage to the gate of the first transistor 100 and the drain of the second transistor 200; the second transistor 200 is used for switching to a conducting state when the pulse input signal is a forward pulse; the third resistor 3 and the second transistor 200 are used to control the voltage of the gate of the first transistor 100, and when the second transistor 200 is in the on state, the voltage of the gate of the first transistor 100 is made smaller than the threshold value, so that the first transistor 100 is in the pre-on state.
In the present embodiment, the output terminal of the source follower 10 is electrically coupled to the positive electrode of the third resistor 3, and the negative electrode of the third resistor 3 is electrically coupled to the drain of the second transistor 200 and the gate of the first transistor 100, so that the source follower 10 applies a voltage to the drain of the second transistor 200 and the gate of the first transistor 100 through the third resistor 3, when the pulse input signal V received by the gate of the second transistor 200 in In the case of the forward pulse, the second transistor 200 is turned on, and at this time, the power supply charges the gate of the third transistor 300 in the source follower 10 to output the voltage V of the gate of the third transistor 300 M3g Pulling up. During this time, the path formed by the power supply, the third transistor 300 and the second transistor 200 is kept on, since the gate of the third transistor 300 is electrically coupled to the third resistor 3, the gate voltage V of the first transistor 100 can be controlled by the third resistor 3 M1g Controlled at a threshold valuePressure V th1 In addition, the first transistor 100 is maintained in the pre-on state during this period, so that the time for the pulse current to reach the peak value is shortened, and the pulse rising time delay is reduced.
Fig. 4 schematically illustrates an operation principle of a driving circuit in a charging stage according to an embodiment of the present disclosure.
Referring to fig. 2 and 4 together, in one embodiment of the present disclosure, the source follower 10 is used to apply a voltage to the gate of the first transistor 100 and the drain of the second transistor 200; the second transistor 200 is configured to switch to an off state when the pulse input signal is a negative pulse; the third resistor 3 and the second transistor 200 are used to control the voltage of the gate of the first transistor 100, and when the second transistor 200 is in the off state, the voltage of the gate of the first transistor 100 is made greater than the threshold value, so that the first transistor 100 is in the on state.
In the present embodiment, the output terminal of the source follower 10 is electrically coupled to the positive electrode of the third resistor 3, and the negative electrode of the third resistor 3 is electrically coupled to the drain of the second transistor 200 and the gate of the first transistor 100, so that the source follower 10 applies a voltage to the drain of the second transistor 200 and the gate of the first transistor 100 through the third resistor 3, when the pulse input signal V received by the gate of the second transistor 200 in When the pulse is negative, the second transistor 200 is turned off, and the power supply, the third transistor 300, the third resistor 3 and the first transistor 100 are turned on, and the voltage V of the gate of the third transistor 300 M3g Is rapidly pulled up to the power supply voltage VDD, the voltage V of the source of the third transistor 300 M3s And the gate voltage V of the first transistor 100 M1g Also along with the voltage V of the gate of the third transistor 300 M3g The first transistor 100 is turned on by the rapid rise of the voltage, so that the first transistor 100 emits laser current pulse to drive the laser, and the laser is in an operating state.
Fig. 5 schematically illustrates an operation principle of a driving circuit in a discharging stage according to an embodiment of the present disclosure.
Referring to fig. 2 and 5 together, in one embodiment of the present disclosure, the source follower 10 is used to apply a voltage to the gate of the first transistor 100 and the drain of the second transistor 200; the second transistor 200 is used for switching to a conductive state when the pulse input signal is changed from a negative pulse to a positive pulse; the third resistor 3 and the second transistor 200 are used for controlling the voltage of the gate of the first transistor 100, and when the pulse input signal received by the second transistor 200 is changed from a negative pulse to a positive pulse, the voltage of the gate of the first transistor 100 is made to be smaller than the threshold value, so that the first transistor 100 is in a pre-conductive state.
In the present embodiment, the output terminal of the source follower 10 is electrically coupled to the positive electrode of the third resistor 3, and the negative electrode of the third resistor 3 is electrically coupled to the drain of the second transistor 200 and the gate of the first transistor 100, so that the source follower 10 applies a voltage to the drain of the second transistor 200 and the gate of the first transistor 100 through the third resistor 3, when the pulse input signal V received by the gate of the second transistor 200 in When the negative pulse is changed to the positive pulse, the voltage V of the gate of the third transistor 300 is switched to the on state due to the positive feedback effect caused by the instantaneous load change of the source follower 10 M3g And the gate voltage V of the first transistor 100 M1g Is pulled down quickly, thereby speeding up the turning off of the first transistor 100.
Fig. 6 schematically illustrates a schematic diagram of another driving circuit provided in an embodiment of the present disclosure.
As shown in fig. 6, in an embodiment of the present disclosure, the driving circuit further includes a fourth transistor 400; the drain of the fourth transistor 400 is connected to the gate of the third transistor 300, the gate of the fourth transistor 400 is for receiving an enable signal, and the source of the fourth transistor 400 is grounded; the fourth transistor 400 is used to control the voltage of the gate of the third transistor 300.
With the above-described driving circuit, the pulse input signal V is received by the gate of the second transistor 200 in When the pulse is forward, the second transistor 200 and the third transistor 300 are turned on simultaneously, and the driving circuit is always in the precharge phase, resulting in higher power consumption of the driving circuit. In this embodiment, the driving circuit further includes a fourth transistor 400, and the fourth transistor 400 may be providedWith an N-type/enhancement GaN hemt, the fourth transistor 400 is used to control the voltage of the gate of the third transistor 300, the drain of the fourth transistor 400 is connected to the gate of the third transistor 300, the gate of the fourth transistor 400 is used to receive the enable signal EN, and the source of the fourth transistor 400 is grounded.
Fig. 7 schematically illustrates an operation principle of another driving circuit provided in an embodiment of the present disclosure in a charging stage.
Referring to fig. 2, fig. 6 and fig. 7 together, in an embodiment of the disclosure, the second transistor 200 is configured to switch to an on state when the pulse input signal is a positive pulse, and to switch to an off state when the pulse input signal is a negative pulse; the fourth transistor 400 is configured to switch to an on state when receiving an enable signal when the pulse input signal received by the second transistor 200 is changed from a negative pulse to a positive pulse, so that the voltage of the gate of the third transistor 300 is less than a threshold value, and the third transistor 300 is in an off state; the second transistor 200 is configured to switch to an on state when the pulse input signal is changed from a negative pulse to a positive pulse, so that the voltage of the gate of the first transistor 100 is less than a threshold value, and the first transistor 100 is in an off state.
In the present embodiment, when the gate of the fourth transistor 400 receives the enable signal EN, the fourth transistor 400 is in the on state, and because the fourth transistor 400 is mainly used to control the voltage of the gate of the third transistor 300, the fourth transistor 400 needs to receive the pulse input signal V from the second transistor 200 in The enable signal EN is received when the negative pulse is changed to the positive pulse, when the fourth transistor 400 is turned on, the power supply does not charge the gate of the third transistor 300 any more, so that the voltage of the gate of the third transistor 300 is smaller than the threshold value, and the third transistor 300 is turned off, thereby placing the source follower 10 in the off state to reduce the idle power consumption of the driving circuit.
Fig. 8 schematically illustrates a schematic diagram of another driving circuit provided in an embodiment of the present disclosure.
As shown in fig. 8, in an embodiment of the present disclosure, the source follower 10 further includes: a first resistor 1, a first end of the first resistor 1 is connected to a power supply, and a second end of the first resistor 1 is connected to a gate of the third transistor 300; the first end of the second resistor 2 is connected with the second end of the first resistor 1 and the grid electrode of the third transistor 300, and the second end of the second resistor 2 is grounded; the first resistor 1 and the second resistor 2 are used to control the voltage of the gate of the third transistor 300.
In this embodiment, in order to better control the voltage of the gate of the third transistor 300, the source follower 10 in this embodiment further includes a first resistor 1 and a second resistor 2, where the positive electrode of the first resistor 1 is connected to the power supply, and the negative electrode of the first resistor 1 is connected to the gate of the third transistor 300 and the positive electrode of the second resistor 2; the positive electrode of the second resistor 2 is connected with the negative electrode of the first resistor 1 and the gate electrode of the third transistor 300, the negative electrode of the second resistor 2 is grounded, and the first resistor 1 and the second resistor 2 are used for controlling the voltage of the gate electrode of the third transistor 300.
In summary, the driving circuit provided by the present disclosure adopts the source follower structure to provide the sink current for the first transistor. Before the first transistor generates a current pulse, the first transistor is placed in a pre-conduction state, so that the time for the pulse current to reach the peak value is shortened, and the pulse rising time delay is reduced; and the positive feedback effect caused by the instantaneous load change of the source follower is utilized to shorten the turn-off time of the first transistor and reduce the pulse falling time delay, so that the switching speed of the first transistor is accelerated, narrower current pulses can be provided for the laser, and the range finding resolution and other main performance indexes of the laser radar are improved.
Based on the driving circuit, the present disclosure also provides a driving method.
Fig. 10 schematically illustrates a flow chart of a driving method according to an embodiment of the disclosure.
As shown in fig. 10, in an embodiment of the present disclosure, the method is applied to a driving circuit, the driving circuit is applicable to a laser, the driving circuit is connected to the laser, and the driving circuit includes: the method includes operations S1010 to S1020.
In operation S1010, a state of the first transistor is controlled by the source follower, the third resistor, and the second transistor.
In operation S1020, the laser is driven through the first transistor.
Based on the driving circuit, the disclosure also provides a laser device, which comprises a laser and the driving circuit; the laser is connected with the driving circuit.
Those skilled in the art will appreciate that the features recited in the various embodiments of the disclosure and/or in the claims may be combined in various combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, the features recited in the various embodiments of the present disclosure and/or the claims may be variously combined and/or combined without departing from the spirit and teachings of the present disclosure. All such combinations and/or combinations fall within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. While the present disclosure has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present disclosure as defined by the appended claims and their equivalents. The scope of the disclosure should, therefore, not be limited to the above-described embodiments, but should be determined not only by the following claims, but also by the equivalents of the following claims.
Claims (10)
1. A driving circuit suitable for use with a laser, the driving circuit coupled to the laser, the driving circuit comprising: a source follower (10), a third resistor (3), a first transistor (100) and a second transistor (200);
the source follower (10) comprises a third transistor (300), wherein the source electrode of the third transistor (300) is connected with the first end of the third resistor (3), the drain electrode of the third transistor (300) is connected with a power supply, and the grid electrode of the third transistor (300) is used for receiving a first input signal;
a second end of the third resistor (3) is connected with the grid electrode of the first transistor (100);
the grid electrode of the first transistor (100) is also connected with the drain electrode of the second transistor (200), the drain electrode of the first transistor (100) is connected with the cathode of the laser, the source electrode of the first transistor (100) is grounded, and the first transistor (100) is used for driving the laser;
the grid electrode of the second transistor (200) is used for receiving a pulse input signal, and the source electrode of the second transistor (200) is grounded;
the source follower (10), the third resistor (3) and the second transistor (200) are used to control the state of the first transistor (100).
2. The driving circuit according to claim 1, wherein,
-the source follower (10) is adapted to apply a voltage to the gate of the first transistor (100) and the drain of the second transistor (200);
the second transistor (200) is used for switching to a conducting state when the pulse input signal is a forward pulse;
the third resistor (3) and the second transistor (200) are used for controlling the voltage of the grid electrode of the first transistor (100), and when the second transistor (200) is in a conducting state, the voltage of the grid electrode of the first transistor (100) is smaller than a threshold value, so that the first transistor (100) is in a pre-conducting state.
3. The driving circuit according to claim 1, wherein,
-the source follower (10) is adapted to apply a voltage to the gate of the first transistor (100) and the drain of the second transistor (200);
the second transistor (200) is configured to switch to an off state when the pulse input signal is a negative-going pulse;
the third resistor (3) and the second transistor (200) are used for controlling the voltage of the grid electrode of the first transistor (100), when the second transistor (200) is in an off state, the voltage of the grid electrode of the first transistor (100) is larger than a threshold value, and the first transistor (100) is in an on state.
4. The drive circuit according to claim 1, wherein the source follower (10) is configured to apply a voltage to the gate of the first transistor (100) and the drain of the second transistor (200);
the second transistor (200) is configured to switch to an on state when the pulse input signal transitions from a negative pulse to a positive pulse;
the third resistor (3) and the second transistor (200) are used for controlling the voltage of the grid electrode of the first transistor (100), and when the pulse input signal received by the second transistor (200) is changed from negative pulse to positive pulse, the voltage of the grid electrode of the first transistor (100) is made to be smaller than a threshold value, so that the first transistor (100) is in a pre-conduction state.
5. The drive circuit according to claim 1, wherein the source follower (10) further comprises:
a first resistor (1), wherein a first end of the first resistor (1) is connected with the power supply, and a second end of the first resistor (1) is connected with the gate of the third transistor (300);
a first end of the second resistor (2) is connected with the second end of the first resistor (1) and the grid electrode of the third transistor (300), and a second end of the second resistor (2) is grounded;
the first resistor (1) and the second resistor (2) are used for controlling the voltage of the gate of the third transistor (300).
6. The drive circuit according to claim 1, characterized in that the drive circuit further comprises a fourth transistor (400);
the drain electrode of the fourth transistor (400) is connected with the gate electrode of the third transistor (300), the gate electrode of the fourth transistor (400) is used for receiving an enabling signal, and the source electrode of the fourth transistor (400) is grounded;
the fourth transistor (400) is for controlling the voltage of the gate of the third transistor (300).
7. The driving circuit according to claim 6, wherein,
the second transistor (200) is used for switching to an on state when the pulse input signal is positive pulse and switching to an off state when the pulse input signal is negative pulse;
the fourth transistor (400) is configured to switch to an on state when receiving an enable signal when an input signal received by the second transistor (200) is changed from a negative pulse to a positive pulse, so that a voltage of a gate of the third transistor (300) is less than a threshold value, and the third transistor (300) is in an off state;
the second transistor (200) is configured to switch to an on state when the pulse input signal is changed from a negative pulse to a positive pulse, so that the voltage of the gate of the first transistor (100) is smaller than a threshold value, and the first transistor (100) is in an off state.
8. The drive circuit of claim 6, wherein the first transistor (100), the second transistor (200), the third transistor (300), and the fourth transistor (400) comprise N-type/enhancement GaN high electron mobility transistors.
9. A driving method, wherein the method is applied to a driving circuit, the driving circuit is suitable for a laser, the driving circuit is connected with the laser, and the driving circuit comprises: a first transistor (100), a second transistor (200), a third resistor (3) and a source follower (10), the method comprising:
-controlling the state of the first transistor (100) by means of the source follower (10), the third resistor (3) and the second transistor (200);
the laser is driven by the first transistor (100).
10. A laser device comprising a laser and a drive circuit as claimed in any one of claims 1 to 8;
the laser is connected with the driving circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210637700.6A CN117239541A (en) | 2022-06-07 | 2022-06-07 | Driving circuit, driving method and laser equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210637700.6A CN117239541A (en) | 2022-06-07 | 2022-06-07 | Driving circuit, driving method and laser equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117239541A true CN117239541A (en) | 2023-12-15 |
Family
ID=89083082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210637700.6A Pending CN117239541A (en) | 2022-06-07 | 2022-06-07 | Driving circuit, driving method and laser equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117239541A (en) |
-
2022
- 2022-06-07 CN CN202210637700.6A patent/CN117239541A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210111533A1 (en) | Fast pulse, high current laser drivers | |
| JP5806076B2 (en) | RF pulse signal generation switching circuit, RF pulse signal generation circuit, and target detection apparatus | |
| WO2020182132A1 (en) | Laser device driving circuit and driving method, and laser radar system | |
| US20230178961A1 (en) | Light source system | |
| US9287870B2 (en) | High speed, high efficiency, high power RF pulse modulating integrated switch | |
| CN108011293B (en) | Narrow pulse infrared semiconductor laser emission circuit | |
| CN117239541A (en) | Driving circuit, driving method and laser equipment | |
| US20190267983A1 (en) | Method for operating a transistor device and electronic-circuit with a transistor device | |
| US5111084A (en) | Low loss drain pulser circuit for solid state microwave power amplifiers | |
| US6700532B2 (en) | Magnetron drive circuit | |
| CN209913235U (en) | Drive circuit and laser radar system of laser instrument | |
| CN210109317U (en) | Laser device driving circuit, laser circuit and laser radar | |
| CN210040874U (en) | Laser transmitter | |
| CN219106738U (en) | Narrow pulse laser driving circuit and laser ranging device | |
| US11152848B2 (en) | Drive circuit with zero-crossing detection function, and zero-crossing detection method | |
| WO2018176286A1 (en) | Laser pulse transmission device, laser measurement device, and mobile platform | |
| WO2021168712A1 (en) | Signal receiving method and device, medium, and radar system | |
| CN212181012U (en) | Pulse type laser driving circuit and laser radar | |
| CN114076932A (en) | Driving device and method for laser radar light-emitting device and laser radar | |
| CN215378887U (en) | Pulse modulator with any pulse width | |
| CN215986503U (en) | Laser power adjustable driving circuit | |
| CN218824670U (en) | Driving circuit of laser radar transmitter | |
| CN217720250U (en) | DFB laser drive circuit | |
| CN110783813B (en) | Drive device, emission system and drive method of nanosecond narrow-pulse laser | |
| CN210864029U (en) | Push-pull type pulse amplifier modulation circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |