CN117239001A - Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array - Google Patents
Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array Download PDFInfo
- Publication number
- CN117239001A CN117239001A CN202311505574.XA CN202311505574A CN117239001A CN 117239001 A CN117239001 A CN 117239001A CN 202311505574 A CN202311505574 A CN 202311505574A CN 117239001 A CN117239001 A CN 117239001A
- Authority
- CN
- China
- Prior art keywords
- layer
- contact electrode
- semiconductor substrate
- ohmic contact
- schottky contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 166
- 239000000463 material Substances 0.000 claims abstract description 106
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 230000004888 barrier function Effects 0.000 claims abstract description 35
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims description 116
- 230000031700 light absorption Effects 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000003780 insertion Methods 0.000 claims description 16
- 230000037431 insertion Effects 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 308
- 230000008569 process Effects 0.000 description 21
- 239000000969 carrier Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 239000007769 metal material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000011358 absorbing material Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000011084 recovery Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention provides a photoelectric detector, a preparation method thereof, a detection method thereof and a photoelectric detector array. The photodetector includes: a semiconductor substrate; the semiconductor material layer is positioned on one side surface of the semiconductor substrate and comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer away from the semiconductor substrate, and a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer; and the ohmic contact electrode and the Schottky contact electrode are positioned on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, and are mutually spaced. The photoelectric detector has a high response speed, so that the photoelectric detector has high detection sensitivity.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a photoelectric detector, a preparation method, a detection method and a photoelectric detector array.
Background
The ultraviolet detection technology is another photoelectric detection technology developed after the infrared and laser detection technology, and has important application in the fields of electric power high-voltage arc corona detection, national defense early warning and tracking, environmental monitoring and the like. With the continuous development of new materials and microelectronic technologies, ultraviolet photodetectors have evolved from photomultiplier tubes, position sensitive devices, to new devices made from wide bandgap semiconductor materials. The solid-state ultraviolet photoelectric detector adopting the wide forbidden band semiconductor material has the advantages of small size, low power consumption, high quantum efficiency, convenience in integration and the like. The wide forbidden band semiconductor represented by III-V nitride (such as GaN) has the characteristics of good heat conduction performance, high electron saturation drift speed, excellent chemical stability and the like, and has remarkable material performance advantage when being used for preparing a photoelectric detection device in an ultraviolet band.
However, the detection sensitivity of the existing photodetector needs to be improved.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the related art to some extent.
Based on this, the present invention provides, in a first aspect, a photodetector comprising: a semiconductor substrate; the semiconductor material layer is positioned on one side surface of the semiconductor substrate, and comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer, which is away from the semiconductor substrate, wherein a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer; and the ohmic contact electrode and the Schottky contact electrode are positioned on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, and are mutually spaced.
In the photoelectric detector, the channel layer and the barrier layer form a heterostructure, two-dimensional electron gas is formed in the heterostructure, so that the photoelectric detector has vertical electric field distribution, external light irradiation can generate photo-generated carriers in the photoelectric detector, electrons in the photo-generated carriers quickly enter a two-dimensional electron gas channel under the action of the vertical electric field and then are transmitted to the Schottky contact electrode, the electron saturation speed is accelerated, the transit time of the photo-generated carriers is greatly shortened, the response speed of the photoelectric detector is accelerated, and the detection sensitivity of the photoelectric detector is further improved.
According to an embodiment of the present invention, the photodetector further includes: and the light absorption layer is positioned on one side surface of the semiconductor material layer, which is away from the semiconductor substrate, and is positioned between the ohmic contact electrode and the Schottky contact electrode and is spaced from the ohmic contact electrode and the Schottky contact electrode. Therefore, the transit time of the photo-generated carriers can be further shortened, the response speed of the photoelectric detector is further increased, and the detection sensitivity of the photoelectric detector is further improved. Meanwhile, the arrangement of the light absorption layer can also modulate the response spectrum of the photoelectric detector, so that the application scene of the photoelectric detector is widened.
According to the embodiment of the invention, the forbidden band width of the light absorption layer is 2.3-eV-6.2 eV.
According to an embodiment of the present invention, the material of the light absorbing layer includes Ga 2 O 3 、AlN、TiO 2 、SnO 2 、WO 3 、Ta 2 O 5 At least one of ZnO.
According to an embodiment of the invention, the thickness of the light absorbing layer is 1nm-1 μm.
According to an embodiment of the invention, the thickness of the light absorbing layer is 10 nm-100 nm.
According to the embodiment of the invention, the photoelectric detector further comprises a passivation layer, the passivation layer covers the surface of one side of the semiconductor material layer, which faces away from the semiconductor substrate, the local area of the ohmic contact electrode and the local area of the Schottky contact electrode are exposed out of the passivation layer, and the passivation layer is made of inorganic insulating materials. Therefore, the service life of the photoelectric detector is prolonged.
According to an embodiment of the present invention, the photodetector further includes: and the light absorption layer is positioned on one side surface of the semiconductor material layer, which is away from the semiconductor substrate, is positioned between the ohmic contact electrode and the Schottky contact electrode, is spaced from the ohmic contact electrode and the Schottky contact electrode, and is exposed outside the passivation layer.
According to the embodiment of the invention, the semiconductor material layer further comprises a buffer layer positioned on one side surface of the semiconductor substrate, and the channel layer is positioned on one side surface of the buffer layer, which is away from the semiconductor substrate; an insertion layer located between the channel layer and the barrier layer; and the ohmic contact electrode and the Schottky contact electrode are both positioned on one side surface of the cap layer, which is away from the semiconductor substrate.
According to the embodiment of the invention, the material of the channel layer is GaN, the material of the barrier layer is AlGaN, the material of the buffer layer is GaN, the material of the insertion layer comprises AlN, and the material of the cap layer is GaN.
In a second aspect, the present invention provides a method for manufacturing a photodetector, including: providing a semiconductor substrate; forming a semiconductor material layer on one side surface of the semiconductor substrate, wherein the semiconductor material layer comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer away from the semiconductor substrate, and a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer; and forming an ohmic contact electrode and a Schottky contact electrode on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the ohmic contact electrode and the Schottky contact electrode are mutually spaced.
According to an embodiment of the present invention, the method for manufacturing a photodetector further includes: after the ohmic contact electrode and the Schottky contact electrode are formed, a passivation layer is formed on the surface of one side, facing away from the semiconductor substrate, of the semiconductor material layer, a local area of the ohmic contact electrode and a local area of the Schottky contact electrode are exposed out of the passivation layer, and the passivation layer is made of inorganic insulating materials.
According to an embodiment of the present invention, a surface of the semiconductor material layer facing away from the semiconductor substrate has an ohmic contact region and a schottky contact region that are disposed at intervals, and the steps of forming the ohmic contact electrode, the schottky contact electrode, and the passivation layer include:
forming a first metal layer in the ohmic contact region, and annealing the first metal layer to obtain the ohmic contact electrode; forming an initial passivation layer on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the initial passivation layer covers the ohmic contact electrode and exposes the Schottky contact region; forming a second metal layer in the Schottky contact area to obtain the Schottky contact electrode; depositing a passivation material in the Schottky contact area to enable the initial passivation layer to form an intermediate passivation layer, wherein the intermediate passivation layer covers the Schottky contact electrode; patterning the intermediate passivation layer to expose a local area of the ohmic contact electrode and a local area of the Schottky contact electrode, thereby obtaining a passivation layer;
Or forming a first metal layer in the ohmic contact region, and annealing the first metal layer to obtain the ohmic contact electrode; forming a second metal layer in the Schottky contact area to obtain the Schottky contact electrode; depositing a passivation material on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, to obtain an intermediate passivation layer, wherein the intermediate passivation layer covers the ohmic contact electrode and the Schottky contact electrode; and patterning the intermediate passivation layer to expose the local area of the ohmic contact electrode and the local area of the Schottky contact electrode, thereby obtaining the passivation layer.
According to an embodiment of the present invention, the method for manufacturing a photodetector further includes: and forming a light absorption layer on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the light absorption layer is positioned between the ohmic contact electrode and the Schottky contact electrode and is spaced from the ohmic contact electrode and the Schottky contact electrode.
According to an embodiment of the invention, a side surface of the semiconductor material layer facing away from the semiconductor substrate is provided with an ohmic contact region, a schottky contact region and a light absorption region positioned between the ohmic contact region and the schottky contact region; the preparation method of the photoelectric detector further comprises the following steps: forming an ohmic contact electrode in the ohmic contact region, forming a passivation layer on the surface of one side of the semiconductor material layer, which faces away from the semiconductor substrate, after the Schottky contact electrode is formed in the Schottky contact region, wherein a local area of the ohmic contact electrode, a local area of the Schottky contact electrode and the light absorption region are exposed out of the passivation layer, and the passivation layer is made of an inorganic insulating material; the light absorbing layer is formed in the light absorbing region.
According to an embodiment of the present invention, the step of forming the semiconductor material layer includes: forming a buffer layer on one side surface of the semiconductor substrate; forming the channel layer on the surface of one side of the buffer layer, which is away from the semiconductor substrate; forming an insertion layer on the surface of one side of the channel layer, which is away from the semiconductor substrate; forming the barrier layer on the surface of one side of the insertion layer, which is away from the semiconductor substrate; and forming a cap layer on the surface of one side of the barrier layer, which is away from the semiconductor substrate, and forming ohmic contact electrodes and Schottky contact electrodes on the surface of one side of the cap layer, which is away from the semiconductor substrate.
In a third aspect, the present invention provides a photodetector array comprising the above photodetectors arranged in an array or photodetectors manufactured by the above manufacturing method.
In a fourth aspect, the present invention provides a detection method, which uses the photodetector provided in the first aspect to perform detection, the detection method comprising: after the nth photodetection is performed, a bias voltage pulse is applied to the photodetector in a dark state environment before the n+1th photodetection is performed, N being an integer of 1 or more. Therefore, the continuous photoconductive effect can be removed rapidly, the dark current is restored to the initial dark current or the equivalent degree of the initial dark current rapidly, the (n+1) th photoelectric detection is carried out, the light restoration time is further shortened, the rapid refreshing of the photoelectric detector can be realized, and the continuous use of the photoelectric detector is facilitated.
According to the embodiment of the invention, the amplitude of the bias voltage pulse is 0.1V-10V, the pulse width is 1ns-1s, and the bias voltage pulse is a single pulse.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present invention, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a photodetector according to embodiment 1 of the present invention;
FIG. 2 is a flow chart of the preparation of a photodetector according to embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 4 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 5 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 6 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
Fig. 7 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 8 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 9 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
fig. 10 is a schematic structural diagram of a photoelectric detector according to embodiment 2 of the present invention in the manufacturing process;
FIG. 11 is a schematic diagram of electrical connections of a photodetector array;
FIG. 12 is an I-t curve of the experimental example and the comparative example in example 3.
Reference numerals illustrate:
1-a semiconductor substrate; a layer of 2-semiconductor material; 21-a channel layer; a 22-barrier layer; 23-a buffer layer; 24-an interposer; 25-cap layer; 26-grooves; a 27-schottky contact region; 28-a light absorbing region; 3-ohmic contact electrode; a 4-Schottky contact electrode; 5-a light absorbing layer; 6-passivation layer; 61-an initial passivation layer; 62—an intermediate passivation layer; 71-a first wire; 72-a second wire; 73-row conductors; 74-column conductors.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative and intended to explain the present invention and should not be construed as limiting the invention.
Example 1
Referring to fig. 1, the present embodiment provides a photodetector, including:
a semiconductor substrate 1;
a semiconductor material layer 2 located on one side surface of the semiconductor substrate 1, the semiconductor material layer 2 including a channel layer 21 located on one side of the semiconductor substrate 1, and a barrier layer 22 located on one side surface of the channel layer 21 facing away from the semiconductor substrate 1, a two-dimensional electron gas (2 DEG) channel being formed at an interface of the channel layer 21 and the barrier layer 22;
an ohmic contact electrode 3 and a schottky contact electrode 4 are positioned on a side surface of the semiconductor material layer 2 facing away from the semiconductor substrate 1, and the ohmic contact electrode 3 and the schottky contact electrode 4 are spaced apart from each other.
The channel layer 21 and the barrier layer 22 in the photoelectric detector form a heterostructure, two-dimensional electron gas is formed in the heterostructure, so that the photoelectric detector has vertical electric field distribution, external light irradiation can generate photo-generated carriers in the photoelectric detector, electrons in the photo-generated carriers are quickly swept into a two-dimensional electron gas channel under the action of the vertical electric field and then are transmitted to a Schottky contact electrode, the electron saturation speed is accelerated, the transit time of the photo-generated carriers is greatly shortened, the response speed of the photoelectric detector is accelerated, and the detection sensitivity of the photoelectric detector is further improved.
Specifically, in the present embodiment, the semiconductor substrate 1 may be Si, siC, sapphire (Al 2 O 3 ) Or one of GaN; the materials of the ohmic contact electrode 3 and the schottky contact electrode 4 each include at least one of Ti, al, W, cr, ni, pt, au, and the materials of the ohmic contact electrode 3 and the schottky contact electrode 4 may be the same or different. When the ohmic contact electrode 3 or the schottky contact electrode 4 has a plurality of materials, it may be a laminated structure or a single-layer structure, in which each metal material constitutes a single layer, and the plurality of metal materials in the single-layer structure are uniformly mixed. The ohmic contact electrode 3 has a thickness of 100 nm to 300 nm, such as 100 nm, 200 nm or 300 nm; the schottky contact electrode 4 has a thickness of 100 nm-300 nm, such as 100 nm, 200 nm or 300 nm.
With continued reference to fig. 1, in this embodiment, the semiconductor material layer 2 further includes:
a buffer layer 23 located on one side surface of the semiconductor substrate 1, and the channel layer 21 is located on one side surface of the buffer layer 23 facing away from the semiconductor substrate 1;
an insertion layer 24 located between the channel layer 21 and the barrier layer 22, the insertion layer 24 being capable of improving mobility of two-dimensional electron gas at a heterojunction interface;
A cap layer 25 located on a side surface of the barrier layer 22 facing away from the semiconductor substrate 1, and the ohmic contact electrode 3 and the schottky contact electrode 4 are located on a side surface of the cap layer 25 facing away from the semiconductor substrate 1.
As a specific example, the material of the channel layer 21 is GaN, the material of the barrier layer 22 is AlGaN, and the AlGaN/GaN heterostructure has a larger energy band offset and a stronger piezoelectric effect, so that it is easy to form a two-dimensional electron gas structure; at this time, the material of the buffer layer 23 may be GaN, the material of the insertion layer 24 may be AlN, the material of the cap layer 25 may be GaN, and the photodetector may be an ultraviolet photodetector.
Further, the thickness of the channel layer 21 may be 0.2 μm to 10 μm, such as 0.2 μm, 1 μm, 2.5 μm, 5 μm, 7.5 μm or 10 μm; the barrier layer 22 may have a thickness of 10nm-1 μm, such as 10nm, 50nm, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, or 1 μm; the thickness of the buffer layer 23 may be 0.5 μm to 10 μm, such as 0.5 μm, 1 μm, 2.5 μm, 5 μm, 7.5 μm or 10 μm; the thickness of the interposer 24 may be 0.5nm-3nm, such as 0.5nm, 1nm, 1.5nm, 2nm, 2.5nm, or 3nm; the thickness of the cap layer 25 may be 0nm to 10nm, such as 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm or 10nm, and may be 0nm since the cap layer may not be formed in the photodetector.
As a preferred embodiment, with continued reference to fig. 1, the photodetector further comprises a light absorbing layer 5 located on a side surface of the semiconductor material layer 2 facing away from the semiconductor substrate 1, the light absorbing layer 5 being located between the ohmic contact electrode 3 and the schottky contact electrode 4 and being spaced apart from the ohmic contact electrode 3 and the schottky contact electrode 4.
When external light with a certain wave band irradiates, the light absorption layer 5 absorbs light energy to generate photo-generated carriers, electrons in the photo-generated carriers are swept into the two-dimensional electron gas channel, so that the electron saturation speed of the two-dimensional electron gas channel is increased, the transit time of the photo-generated carriers is further shortened, the response speed of the photoelectric detector is further increased, and the detection sensitivity of the photoelectric detector is further improved. Meanwhile, the arrangement of the light absorption layer 5 can also modulate the response spectrum of the photoelectric detector (such as widening the wave band or reducing the wave band), so that the detectable wavelength range of the photoelectric detector is modulated, and the application scene of the photoelectric detector is widened. The light absorbing materials with different forbidden bandwidths have different absorption wave bands, so that the light absorbing materials have different response spectrums, and therefore, the response spectrums of the photoelectric detector can be regulated and controlled by regulating and controlling the material of the light absorbing layer 5, so that the light absorbing material has stronger flexibility. When the response spectrum of the photoelectric detector is positioned in the ultraviolet band, the photoelectric detector is an ultraviolet photoelectric detector.
Specifically, the forbidden band width of the light absorption layer 5 may be 2.3 eV-6.2 eV, such as 2.3 eV, 2.8 eV, 3.4 eV, 3.8 eV, 4.3 eV, 4.8 eV, 5.3 eV, 5.8 eV, or 6.2 eV; illustratively, the light absorbing layer 5Materials of (a) include, but are not limited to Ga 2 O 3 、AlN、TiO 2 、SnO 2 、WO 3 、Ta 2 O 5 At least one of ZnO and the light absorption layer 5 is made of the material, and the photoelectric detector is an ultraviolet photoelectric detector.
Further, the thickness of the light absorbing layer 5 is 1nm to 1 μm, such as 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 50nm, 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm or 1 μm; preferably, the thickness of the light absorbing layer 5 is 10 nm-100 nm.
As a preferred embodiment, with continued reference to fig. 1, the photodetector further includes a passivation layer 6, where the passivation layer 6 covers a surface of a side of the semiconductor material layer 2 facing away from the semiconductor substrate 1, and covers a part of a surface of the ohmic contact electrode 3 and a part of a surface of the schottky contact electrode 4, and a local area of the ohmic contact electrode 3 and a local area of the schottky contact electrode 4 are exposed outside the passivation layer 6, and a material of the passivation layer 6 is an inorganic insulating material, and the exposed areas of the ohmic contact electrode 3 and the schottky contact electrode 4 are used to connect wires, and bias the photodetector through the wires during the photoelectric detection. The inorganic insulating material with stable chemical properties is adopted to wrap the semiconductor material layer 2, the non-wiring area of the ohmic contact electrode 3 and the non-wiring area of the Schottky contact electrode 4, so that the protection effect can be achieved, moisture, oxygen and the like in the external environment are prevented from reacting with the semiconductor material or the metal material, and the service life of the photoelectric detector is prolonged.
Specifically, the passivation layer 6 may be at least one of silicon oxide, silicon nitride, and aluminum oxide, and may also be other inorganic insulating materials. The passivation layer 6 may have a thickness of 100 a nm-300 a nm a, such as 100 a nm a 200 a nm a 300 a nm a. Referring to fig. 10, a wire including a first wire 71 connected to the ohmic contact electrode 3 and a second wire 72 connected to the schottky contact electrode 4 is located on a side surface of the passivation layer 6 facing away from the semiconductor substrate 1.
Further, with continued reference to fig. 1, when the photodetector is provided with the light absorbing layer 5, the light absorbing layer 5 is exposed outside the passivation layer 6, so as to avoid affecting the light absorbing efficiency of the light absorbing layer 5.
Referring to fig. 11, the present embodiment further provides a photodetector array, including a plurality of photodetectors D (m×n) arranged in an array, where the number of rows m and the number of columns n may be equal or unequal, and the photodetectors are photodetectors provided in this embodiment. The photoelectric detectors share a semiconductor substrate and a buffer layer, adjacent photoelectric detectors are isolated by grooves, the depth of the grooves reaches the channel layer, each photoelectric detector is provided with an independent ohmic contact electrode and an independent Schottky contact electrode, when the photoelectric detectors are provided with light absorption layers, each photoelectric detector is provided with an independent light absorption layer, and the forbidden band widths of the light absorption layers of the different photoelectric detectors are the same. The ohmic contact electrodes of the same row are led out with a row conductor 73 and the schottky contact electrodes of the same column are led out with a column conductor 74.
The steps of detecting light rays in a specific wave band by using the photoelectric detector with a specific structure are as follows: applying a bias voltage to the photodetector; placing the photodetector in a dark state environment to obtain an initial dark current of the photodetector; transferring the photoelectric detector into a detection environment to obtain a detection current value of the photoelectric detector; when the detection current value is larger than the initial dark current, the light with the specific wave band in the detection environment is proved, and the light intensity value of the light with the specific wave band can be calculated according to the detection current value. However, due to the photoconductive effect of the photodetector, after removing the light of the specific wavelength band, the dark current is difficult to recover to the initial dark current or the level equivalent to the initial dark current in a short time, if the next photoelectric detection is performed at this time, the intensity of the light of the specific wavelength band to be detected cannot be accurately obtained, which affects the accuracy of the detection result, so that the detector can only be used for roughly detecting whether the light of the specific wavelength band exists in the environment; in order to ensure the detection accuracy of the light intensity value of the light in the specific wavelength band, the dark current needs to be recovered to the initial dark current or the equivalent degree of the initial dark current, so that a certain time interval is needed between the two photoelectric detection.
When both electrodes of the photodetector of the embodiment are ohmic contact electrodes, the photodetector has a continuous photoconductive phenomenon, and the light recovery time is long, which results in a long time interval between two photodetectors, and affects the continuous use of the photodetector. In this embodiment, the two electrodes of the photodetector are an ohmic contact electrode and a schottky contact electrode, which have relatively short light recovery time, so that the next photoelectric detection can be performed without waiting too long, which is beneficial to continuous use of the photodetector.
When the two electrodes of the photodetector are schottky contact electrodes, the photocurrent generated by the photodetector is relatively small, and when the difference between the photocurrent and the initial dark current is small, whether the detection environment contains light rays of a specific wave band cannot be accurately judged, so that the detection sensitivity and the detection accuracy of the photodetector are reduced. In this embodiment, the two electrodes of the photodetector are an ohmic contact electrode and a schottky contact electrode, so that a larger photocurrent can be generated, which is beneficial to improving the detection sensitivity and the detection accuracy of the photodetector.
Example 2
Referring to fig. 2, the embodiment provides a method for manufacturing a photoelectric detector, including:
step S1, providing a semiconductor substrate;
step S2, forming a semiconductor material layer on one side surface of the semiconductor substrate, wherein the semiconductor material layer comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer away from the semiconductor substrate, and a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer;
and S3, forming an ohmic contact electrode and a Schottky contact electrode on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the ohmic contact electrode and the Schottky contact electrode are mutually spaced.
In the photoelectric detector obtained by the preparation method, the channel layer and the barrier layer form a heterostructure, and two-dimensional electron gas is formed in the heterostructure, so that the response speed of the photoelectric detector can be accelerated, and the detection sensitivity of the photoelectric detector is improved; the two electrodes of the photoelectric detector are an ohmic contact electrode and a Schottky contact electrode respectively, and the photoelectric detector has relatively short light recovery time, so that the next photoelectric detection can be carried out without waiting for too long time, the continuous use of the photoelectric detector is facilitated, and larger photocurrent can be generated, and the detection sensitivity and the detection accuracy of the photoelectric detector are improved.
As a preferred embodiment, the method for manufacturing the photodetector further includes: and forming a light absorption layer on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the light absorption layer is positioned between the ohmic contact electrode and the Schottky contact electrode and is spaced from the ohmic contact electrode and the Schottky contact electrode. The formation of the light absorption layer can further accelerate the response speed of the photoelectric detector, and further improve the detection sensitivity of the photoelectric detector. Meanwhile, the formation of the light absorption layer can also modulate the response spectrum of the photoelectric detector, so that the detectable wavelength range of the photoelectric detector is modulated, and the application scene of the photoelectric detector is further widened.
As a preferred embodiment, the method for manufacturing the photodetector further includes: after the ohmic contact electrode and the Schottky contact electrode are formed, a passivation layer is formed on the surface of one side, facing away from the semiconductor substrate, of the semiconductor material layer, a local area of the ohmic contact electrode and a local area of the Schottky contact electrode are exposed out of the passivation layer, the exposed areas of the ohmic contact electrode and the Schottky contact electrode are used for connecting wires, and the passivation layer is made of inorganic insulating materials. And the inorganic insulating material with stable chemical properties is used for wrapping the semiconductor material layer, the non-wiring area of the ohmic contact electrode and the non-wiring area of the Schottky contact electrode, so that the service life of the photoelectric detector is prolonged. When a light absorbing layer and a passivation layer are simultaneously formed in the photodetector, the light absorbing layer is exposed outside the passivation layer.
The method of fabricating the photodetector will be described more clearly and fully below with reference to the exemplary embodiments of fig. 3-10.
Referring to fig. 3, a buffer layer 23 is formed on one side surface of the semiconductor substrate 1; forming the channel layer 21 on a surface of the buffer layer 23 on a side facing away from the semiconductor substrate 1; the barrier layer 22 is formed on a surface of the channel layer 21 facing away from the semiconductor substrate 1, resulting in the semiconductor material layer 2.
Further, after the channel layer 21 is formed, an insertion layer 24 may be formed on a surface of the channel layer 21 facing away from the semiconductor substrate 1, and the barrier layer 22 may be formed on a surface of the insertion layer 24 facing away from the semiconductor substrate 1; and a cap layer 25 is formed on a surface of the barrier layer 22 on a side facing away from the semiconductor substrate 1, thereby obtaining a semiconductor material layer 2.
Specifically, the processes of forming the channel layer 21, the barrier layer 22, the buffer layer 23, the insertion layer 24, and the cap layer 25 include, but are not limited to, metal Organic Chemical Vapor Deposition (MOCVD) processes, and different functional layers may be prepared by the same process or by different processes.
Referring to fig. 4, the semiconductor material layer 2 is selectively etched to a depth reaching the channel layer 21, resulting in a trench 26 and a mesa surrounded by the trench 26.
Specifically, the selective etching process includes, but is not limited to, an Inductively Coupled Plasma (ICP) etching process. The semiconductor material layer is far away from one side surface of the semiconductor substrate and is provided with an ohmic contact area, a Schottky contact area and a light absorption area positioned between the ohmic contact area and the Schottky contact area, the ohmic contact area, the Schottky contact area and the light absorption area are mutually spaced, and each mesa is provided with a group of ohmic contact area, schottky contact area and light absorption area.
Referring to fig. 5, a first metal layer is formed in the ohmic contact region, and the first metal layer is annealed to obtain the ohmic contact electrode 3.
Specifically, the process of forming the first metal layer includes, but is not limited to, a vacuum evaporation process, wherein in the evaporation process, a mask plate is arranged on the surface of one side of the semiconductor material layer, which faces away from the semiconductor substrate, so as to avoid depositing a metal material on the surface of the semiconductor material layer except for an ohmic contact area, thereby obtaining the first metal layer after the deposition is finished; the atmosphere for annealing the first metal layer is an inert atmosphere or a nitrogen atmosphere, so as to avoid oxidation of the first metal layer.
Referring to fig. 6, an initial passivation layer 61 is formed on a surface of the semiconductor material layer 2 facing away from the semiconductor substrate 1, the initial passivation layer 61 covering the ohmic contact electrode 3 and exposing the schottky contact region 27.
Specifically, the step of forming the initial passivation layer includes: forming a passivation material layer which covers the semiconductor material layer in an integral way, wherein the passivation material layer covers the ohmic contact electrode; and etching the passivation material layer to remove the passivation material positioned in the Schottky contact area, thereby obtaining an initial passivation layer. The process of forming the passivation material layer includes, but is not limited to, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. The passivation material layer may be etched using the following steps: and coating photoresist on the surface of one side of the passivation material layer, which is away from the semiconductor substrate, sequentially curing, exposing and developing the photoresist to expose the passivation material positioned in the Schottky contact area, etching the passivation material layer by taking the photoresist layer as a mask, and removing the photoresist after etching is finished.
Referring to fig. 7, a second metal layer is formed on the schottky contact region 27 to obtain the schottky contact electrode 4.
Specifically, the schottky contact electrode may be formed by the following steps: forming a whole metal material layer on the surface of one side of the initial passivation layer, which is away from the semiconductor substrate, wherein the metal material layer covers the Schottky contact area; and etching the metal material layer to remove the metal material outside the Schottky contact area, thereby obtaining the Schottky contact electrode. The process of forming the metal material layer includes, but is not limited to, a vacuum evaporation process. The schottky contact electrode may also be formed using other steps.
Referring to fig. 8, a passivation material is deposited on the schottky contact region 27 such that the initial passivation layer 61 forms an intermediate passivation layer 62, the intermediate passivation layer 62 covering the schottky contact electrode 4 and the ohmic contact electrode 3.
Specifically, the process of depositing the passivation material in the schottky contact region includes, but is not limited to, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and during the deposition process, a mask may be disposed on a surface of the initial passivation layer on a side facing away from the semiconductor substrate, so that the passivation material is deposited only on a surface of the schottky contact electrode on a side facing away from the semiconductor substrate and on a side surface of the schottky contact electrode. The intermediate passivation layer may also be formed using other steps.
Referring to fig. 9, the intermediate passivation layer 62 is patterned to expose a partial region of the ohmic contact electrode 3 and a partial region of the schottky contact electrode 4, resulting in the passivation layer 6.
Specifically, the intermediate passivation layer may be patterned by the following steps: and coating photoresist on the surface of one side of the intermediate state passivation layer, which is far away from the semiconductor substrate, sequentially curing, exposing and developing the photoresist to expose passivation materials in a local area of the ohmic contact area and a local area of the Schottky contact area, etching the intermediate state passivation layer by taking the photoresist layer as a mask, and removing the photoresist after etching is finished.
As a preferred embodiment, with continued reference to fig. 9, the passivation layer 6 also exposes the light absorbing region 28; referring to fig. 10, the method of manufacturing the photodetector further includes forming the light absorbing layer 5 in the light absorbing region 28.
Specifically, after developing the photoresist on the surface of the intermediate passivation layer, the passivation material located in the light absorbing region is exposed, so that the passivation material located in the light absorbing region is etched away, and the passivation layer is obtained and the light absorbing region is exposed. The step of forming the light absorbing layer in the light absorbing region includes: depositing a light absorbing material on the whole surface of the passivation layer, which is away from the semiconductor substrate layer, so as to obtain a light absorbing material layer; and patterning the light absorbing material layer to obtain the light absorbing layer. The process of depositing the light absorbing material includes, but is not limited to, a Physical Vapor Deposition (PVD) process, and the process of patterning the light absorbing material layer may be a wet etching process or a dry etching process.
As an alternative embodiment, the ohmic contact electrode 3, the schottky contact electrode 4, and the passivation layer 6 may also be formed by the steps of: forming a first metal layer in the ohmic contact region, and annealing the first metal layer to obtain an ohmic contact electrode 3, wherein the first metal layer can be deposited by using a mask plate; forming a second metal layer in the schottky contact region 27 to obtain a schottky contact electrode 4, wherein the second metal layer can be deposited by using a mask plate; depositing a passivation material on the surface of one side of the semiconductor material layer 2 away from the semiconductor substrate 1 to obtain an intermediate passivation layer 62, wherein the intermediate passivation layer 62 covers the ohmic contact electrode 3 and the Schottky contact electrode 4; the intermediate passivation layer 62 is patterned to expose a localized region of the ohmic contact electrode 3 and a localized region of the schottky contact electrode 4, resulting in a passivation layer 6.
Correspondingly, when the photodetector needs to form the light absorption layer 5, the light absorption region can be exposed after patterning treatment is performed on the intermediate passivation layer, so that the passivation layer is obtained, and then the light absorption layer is formed in the light absorption region; it is also possible to form the light absorbing layer 5 in the light absorbing region after forming the ohmic contact electrode 3 and the schottky contact electrode 4, and then form the intermediate passivation layer 62 entirely covering; during the patterning of intermediate passivation layer 62, the passivation material in light absorbing region 28 is removed to expose light absorbing layer 5.
Note that, since the ohmic contact electrode 3 is formed by high-temperature annealing, and the schottky contact electrode 4 is not formed by high-temperature annealing, the ohmic contact electrode 3 is formed prior to the schottky contact electrode 4 in this embodiment.
In this embodiment, with continued reference to fig. 10, the method for manufacturing the photodetector further includes: after the passivation layer 6 is formed, a wire including a first wire 71 connected to the ohmic contact electrode 3 and a second wire 72 connected to the schottky contact electrode 4 is formed on a side surface of the passivation layer 6 facing away from the semiconductor substrate 1, one end of the first wire 71 extends to a partial surface of the ohmic contact electrode 3 exposed outside the passivation layer, and one end of the second wire 72 extends to a partial surface of the schottky contact electrode 4 exposed outside the passivation layer. When the photodetector needs to form the light absorbing layer 5, the wires may be formed before the light absorbing layer 5 or after the light absorbing layer 5.
The preparation method of the photodetector provided in this embodiment can prepare the photodetector provided in embodiment 1, so in this embodiment, materials and thicknesses of the semiconductor substrate, the buffer layer, the channel layer, the insertion layer, the barrier layer, the cap layer, the ohmic contact electrode, the schottky contact electrode and the light absorption layer can be referred to in embodiment 1, and will not be described herein.
Example 3
The present embodiment provides a detection method, which uses the photodetector provided in embodiment 1 to perform detection, and the detection method includes: after the nth photodetection is performed, a bias voltage pulse is applied to the photodetector in a dark state environment before the n+1th photodetection is performed, N being an integer of 1 or more.
Specifically, the detection method further comprises the following steps: before the first photo detection is performed, the photo detector is placed in a dark state environment to obtain an initial dark current of the photo detector. The detection process of the photodetector includes an initial dark current acquisition step, a photodetection step, and a bias voltage pulse application step. The photoelectric detector is arranged in a detection environment, and when the generated detection current value is larger than the initial dark current, the light with a specific wave band in the detection environment is proved, and at the moment, one photoelectric detection is completed.
According to the embodiment, after the Nth photoelectric detection is carried out, the bias voltage pulse is applied to the photoelectric detector in the dark state environment, the continuous photoconductive effect can be removed rapidly, the dark current is restored to the initial dark current or the degree equivalent to the initial dark current rapidly, the (n+1) th photoelectric detection is carried out, the light restoration time is further shortened, the rapid refreshing of the photoelectric detector can be realized, and the continuous use of the photoelectric detector is facilitated. That is, after one photo-detection, a bias voltage pulse is applied to the photo-detector, followed by the next photo-detection.
As an alternative implementation manner, the amplitude of the bias voltage pulse can be 0.1V-10V, the pulse width can be 1 ns-1s, the bias voltage pulse is a single pulse, the pulse width is the time for applying the pulse, the pulse width can be adjusted according to the amplitude of the bias voltage pulse, and the pulse time is properly prolonged if the amplitude is small.
Preferably, the bias voltage pulse is preferably forward bias, and the effect is more obvious.
In the present embodiment, in both the initial dark current acquisition step and the photodetection step, the photodetector is applied with a constant bias voltage. Preferably, the bias voltage is between a maximum voltage value and a minimum voltage value of the bias voltage pulse, and the bias voltage may be equal to the maximum voltage value or the minimum voltage value of the bias voltage pulse. In other embodiments, the bias voltage may not be between the maximum voltage value and the minimum voltage value of the bias voltage pulse.
The detection method provided in this embodiment is applicable not only to the photodetector provided in embodiment 1, but also to photodetectors of other structures.
In the present application, when the photodetector is in the dark state environment, it means that no external light is irradiated on the photodetector.
Specific experimental examples and comparative examples are provided below to support the effects of the detection method provided in this example.
Experimental example:
ultraviolet light testing was performed using one of the photodetectors provided in example 1. The photodetector has Si substrate, 2 μm thick GaN buffer layer, 2 μm thick GaN channel layer, 2nm thick AlN insertion layer, 200nm thick AlGaN barrier layer, 3nm thick GaN cap layer, 300nm thick silicon nitride passivation layer, 10nm thick Ga 2 O 3 Light absorbing layer, 150nm thick ohmic contact electrode, 200nm thick Schottky contact electrode200nm thick wire; the ohmic contact electrode comprises a Ti layer, an Al layer, a Ni layer and an Au layer (Ti/Al/Ni/Au) which are sequentially laminated, and the Ti layer is contacted with the GaN cap layer; the Schottky contact electrode comprises a Ni layer and an Au layer (Ni/Au) which are sequentially stacked, and the Ni layer is in contact with the GaN cap layer; the wire includes a Ti layer and an Au layer (Ti/Au) laminated in this order, and the Ti layer is in contact with the passivation layer.
The detection steps are as follows: applying a bias voltage of-1V to the photodetector, and placing the photodetector in a dark state environment; then the photodetector is irradiated with ultraviolet light with the wavelength of 255nm and the intensity of 280 mu W/cm 2 The illumination time is 35s; then removing ultraviolet light and bias voltage, transferring the photoelectric detector into a dark state environment, and applying a forward bias voltage single pulse to the photoelectric detector, wherein the maximum value of the bias voltage pulse is 1V, the minimum value of the bias voltage pulse is 0V, and the pulse width is 50ms; detecting the whole-course change condition of the internal current value of the photoelectric detector.
Comparative example:
the same photoelectric detector as the experimental example is adopted for testing, and the only difference between the detection steps and the experimental example is that: after removing the ultraviolet light, the photodetector is transferred into a dark state environment, and the bias voltage of-1V is continuously applied to the photodetector, without applying a bias voltage pulse to the photodetector.
The test results of both the experimental example and the comparative example are shown in fig. 12, in which the abscissa indicates time t in seconds s and the ordinate indicates current I in amperes a. As can be seen from fig. 12, after the photoelectric detection, the bias voltage pulse is applied to the photodetector in the dark state environment, the dark current is quickly recovered to a level equivalent to the initial dark current, and the continuous photoconductive effect can be quickly removed, so that the rapid refresh of the photodetector is realized, and the continuous use of the photodetector is facilitated.
The terms "first," "second," and the like herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (19)
1. A photodetector, comprising:
a semiconductor substrate;
the semiconductor material layer is positioned on one side surface of the semiconductor substrate, and comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer, which is away from the semiconductor substrate, wherein a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer;
and the ohmic contact electrode and the Schottky contact electrode are positioned on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, and are mutually spaced.
2. The photodetector of claim 1, further comprising:
and the light absorption layer is positioned on one side surface of the semiconductor material layer, which is away from the semiconductor substrate, and is positioned between the ohmic contact electrode and the Schottky contact electrode and is spaced from the ohmic contact electrode and the Schottky contact electrode.
3. The photodetector of claim 2 wherein said light absorbing layer has a forbidden bandwidth of 2.3 eV-6.2 eV.
4. A photodetector according to claim 3 wherein the material of the light absorbing layer comprises Ga 2 O 3 、AlN、TiO 2 、SnO 2 、WO 3 、Ta 2 O 5 At least one of ZnO.
5. The photodetector of claim 2 wherein said light absorbing layer has a thickness of 1nm to 1 μm.
6. The photodetector of claim 5 wherein said light absorbing layer has a thickness of 10 nm to 100 nm.
7. The photodetector of claim 1, further comprising:
and the passivation layer covers the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, and the local area of the ohmic contact electrode and the local area of the Schottky contact electrode are exposed out of the passivation layer, and the passivation layer is made of inorganic insulating materials.
8. The photodetector of claim 7, further comprising:
and the light absorption layer is positioned on one side surface of the semiconductor material layer, which is away from the semiconductor substrate, is positioned between the ohmic contact electrode and the Schottky contact electrode, is spaced from the ohmic contact electrode and the Schottky contact electrode, and is exposed outside the passivation layer.
9. The photodetector of claim 1 wherein said layer of semiconductor material further comprises:
the buffer layer is positioned on one side surface of the semiconductor substrate, and the channel layer is positioned on one side surface of the buffer layer, which is away from the semiconductor substrate;
an insertion layer located between the channel layer and the barrier layer;
and the ohmic contact electrode and the Schottky contact electrode are both positioned on one side surface of the cap layer, which is away from the semiconductor substrate.
10. The photodetector of claim 9, wherein the channel layer is GaN, the barrier layer is AlGaN, the buffer layer is GaN, the insertion layer is AlN, and the cap layer is GaN.
11. A method of fabricating a photodetector, comprising:
providing a semiconductor substrate;
forming a semiconductor material layer on one side surface of the semiconductor substrate, wherein the semiconductor material layer comprises a channel layer positioned on one side of the semiconductor substrate and a barrier layer positioned on one side surface of the channel layer away from the semiconductor substrate, and a two-dimensional electron gas channel is formed at the interface of the channel layer and the barrier layer;
And forming an ohmic contact electrode and a Schottky contact electrode on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the ohmic contact electrode and the Schottky contact electrode are mutually spaced.
12. The method of manufacturing a photodetector of claim 11, further comprising:
after the ohmic contact electrode and the Schottky contact electrode are formed, a passivation layer is formed on the surface of one side, facing away from the semiconductor substrate, of the semiconductor material layer, a local area of the ohmic contact electrode and a local area of the Schottky contact electrode are exposed out of the passivation layer, and the passivation layer is made of inorganic insulating materials.
13. The method of manufacturing a photodetector of claim 12, wherein a side surface of said semiconductor material layer facing away from said semiconductor substrate has ohmic contact regions and schottky contact regions disposed at intervals, and the step of forming said ohmic contact electrode, said schottky contact electrode, and said passivation layer comprises:
forming a first metal layer in the ohmic contact region, and annealing the first metal layer to obtain the ohmic contact electrode; forming an initial passivation layer on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the initial passivation layer covers the ohmic contact electrode and exposes the Schottky contact region; forming a second metal layer in the Schottky contact area to obtain the Schottky contact electrode; depositing a passivation material in the Schottky contact area to enable the initial passivation layer to form an intermediate passivation layer, wherein the intermediate passivation layer covers the Schottky contact electrode; patterning the intermediate passivation layer to expose a local area of the ohmic contact electrode and a local area of the Schottky contact electrode, thereby obtaining a passivation layer;
Or forming a first metal layer in the ohmic contact region, and annealing the first metal layer to obtain the ohmic contact electrode; forming a second metal layer in the Schottky contact area to obtain the Schottky contact electrode; depositing a passivation material on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, to obtain an intermediate passivation layer, wherein the intermediate passivation layer covers the ohmic contact electrode and the Schottky contact electrode; and patterning the intermediate passivation layer to expose the local area of the ohmic contact electrode and the local area of the Schottky contact electrode, thereby obtaining the passivation layer.
14. The method of manufacturing a photodetector according to any one of claims 11 to 13, further comprising:
and forming a light absorption layer on the surface of one side of the semiconductor material layer, which is away from the semiconductor substrate, wherein the light absorption layer is positioned between the ohmic contact electrode and the Schottky contact electrode and is spaced from the ohmic contact electrode and the Schottky contact electrode.
15. The method of manufacturing a photodetector of claim 14, wherein a side surface of said semiconductor material layer facing away from said semiconductor substrate has an ohmic contact region, a schottky contact region, and a light absorption region between the ohmic contact region and the schottky contact region, said method further comprising:
Forming an ohmic contact electrode in the ohmic contact region, forming a passivation layer on the surface of one side of the semiconductor material layer, which faces away from the semiconductor substrate, after the Schottky contact electrode is formed in the Schottky contact region, wherein a local area of the ohmic contact electrode, a local area of the Schottky contact electrode and the light absorption region are exposed out of the passivation layer, and the passivation layer is made of an inorganic insulating material;
the light absorbing layer is formed in the light absorbing region.
16. The method of fabricating a photodetector of claim 11, wherein the step of forming said semiconductor material layer comprises:
forming a buffer layer on one side surface of the semiconductor substrate;
forming the channel layer on the surface of one side of the buffer layer, which is away from the semiconductor substrate;
forming an insertion layer on the surface of one side of the channel layer, which is away from the semiconductor substrate;
forming the barrier layer on the surface of one side of the insertion layer, which is away from the semiconductor substrate;
and forming a cap layer on the surface of one side of the barrier layer, which is away from the semiconductor substrate, and forming ohmic contact electrodes and Schottky contact electrodes on the surface of one side of the cap layer, which is away from the semiconductor substrate.
17. A photodetector array comprising a plurality of photodetectors arranged in an array, wherein the photodetectors are photodetectors according to any one of claims 1 to 10 or are prepared by a method according to any one of claims 11 to 16.
18. A detection method, characterized in that the photodetector according to any one of claims 1 to 10 is applied for detection, the detection method comprising:
after the nth photodetection is performed, a bias voltage pulse is applied to the photodetector in a dark state environment before the n+1th photodetection is performed, N being an integer of 1 or more.
19. The method of claim 18, wherein the bias voltage pulse has an amplitude of 0.1V-10V and a pulse width of 1ns-1s, and the bias voltage pulse is a single pulse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311505574.XA CN117239001A (en) | 2023-11-13 | 2023-11-13 | Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311505574.XA CN117239001A (en) | 2023-11-13 | 2023-11-13 | Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117239001A true CN117239001A (en) | 2023-12-15 |
Family
ID=89093277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311505574.XA Pending CN117239001A (en) | 2023-11-13 | 2023-11-13 | Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117239001A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637894A (en) * | 2023-12-18 | 2024-03-01 | 华南理工大学 | Ultra-thin barrier enhanced heterojunction ultraviolet photoelectric detector and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698870A (en) * | 1996-07-22 | 1997-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal |
| US20140042451A1 (en) * | 2012-08-10 | 2014-02-13 | Ngk Insulators, Ltd. | Semiconductor device, hemt device, and method of manufacturing semiconductor device |
| CN109888051A (en) * | 2019-03-08 | 2019-06-14 | 中国科学院物理研究所 | A kind of X-ray detector and its manufacturing method |
| CN110137246A (en) * | 2019-06-04 | 2019-08-16 | 中山大学 | A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof |
| CN111524998A (en) * | 2020-05-07 | 2020-08-11 | 西安电子科技大学 | Solar light blind area Schottky back grid metal oxide semiconductor field effect photoelectric transistor |
| CN111739960A (en) * | 2020-05-14 | 2020-10-02 | 中山大学 | Gain type heterojunction ultraviolet photoelectric detector |
| CN113421942A (en) * | 2021-05-13 | 2021-09-21 | 北京大学深圳研究生院 | Photodetection transistor, method for manufacturing the same, and photodetection method using the same |
| CN116387398A (en) * | 2023-02-03 | 2023-07-04 | 合肥工业大学 | Method for improving performance of AlGaN/GaN-based ultraviolet photoelectric detector through F-based plasma treatment |
-
2023
- 2023-11-13 CN CN202311505574.XA patent/CN117239001A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698870A (en) * | 1996-07-22 | 1997-12-16 | The United States Of America As Represented By The Secretary Of The Air Force | High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal |
| US20140042451A1 (en) * | 2012-08-10 | 2014-02-13 | Ngk Insulators, Ltd. | Semiconductor device, hemt device, and method of manufacturing semiconductor device |
| CN109888051A (en) * | 2019-03-08 | 2019-06-14 | 中国科学院物理研究所 | A kind of X-ray detector and its manufacturing method |
| CN110137246A (en) * | 2019-06-04 | 2019-08-16 | 中山大学 | A kind of low junction capacity characteristic Terahertz Schottky diode and preparation method thereof |
| CN111524998A (en) * | 2020-05-07 | 2020-08-11 | 西安电子科技大学 | Solar light blind area Schottky back grid metal oxide semiconductor field effect photoelectric transistor |
| CN111739960A (en) * | 2020-05-14 | 2020-10-02 | 中山大学 | Gain type heterojunction ultraviolet photoelectric detector |
| CN113421942A (en) * | 2021-05-13 | 2021-09-21 | 北京大学深圳研究生院 | Photodetection transistor, method for manufacturing the same, and photodetection method using the same |
| CN115411135A (en) * | 2021-05-13 | 2022-11-29 | 北京大学深圳研究生院 | Photoelectric detection transistor |
| CN116387398A (en) * | 2023-02-03 | 2023-07-04 | 合肥工业大学 | Method for improving performance of AlGaN/GaN-based ultraviolet photoelectric detector through F-based plasma treatment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637894A (en) * | 2023-12-18 | 2024-03-01 | 华南理工大学 | Ultra-thin barrier enhanced heterojunction ultraviolet photoelectric detector and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9112098B2 (en) | Minority carrier based HgCdTe infrared detectors and arrays | |
| JP5800291B2 (en) | ZnO-based semiconductor device and manufacturing method thereof | |
| CN108198897B (en) | Graphene field effect transistor quantum dot photoelectric detector and preparation method thereof | |
| CN117239001A (en) | Photoelectric detector, preparation method thereof, detection method thereof and photoelectric detector array | |
| CN110931611A (en) | High efficiency microdevice | |
| US20230147241A1 (en) | Electromagnetic wave detector and electromagnetic wave detector array | |
| US10886323B2 (en) | Infrared detector, infrared detection device, and method of manufacturing infrared detector | |
| JP6265032B2 (en) | Semiconductor photo detector | |
| US9960299B2 (en) | Avalanche photodiode using silicon nanowire and silicon nanowire photomultiplier using the same | |
| JP5082233B2 (en) | Infrared detector manufacturing method | |
| JP5779005B2 (en) | Ultraviolet light receiving element and manufacturing method thereof | |
| WO2018042534A1 (en) | Semiconductor crystal substrate, infrared detection device, optical semiconductor device, semiconductor device, thermoelectric transducer, method for producing semiconductor crystal substrate, and method for producing infrared detection device | |
| JPH05322646A (en) | Photodetecting device having variable detecting threshold | |
| US20230282759A1 (en) | Electromagnetic wave detector and electromagnetic wave detector assembly | |
| JP2008060161A (en) | Optical detector, and method of manufacturing optical detector | |
| KR20200127778A (en) | Array-Type Graphene-Semiconductor Heterojunction Photodetector and Method for Manufacturing the Same | |
| CN115101603B (en) | Photodetector | |
| JP7341373B1 (en) | Electromagnetic wave detector, electromagnetic wave detector array and image sensor | |
| JP7374222B2 (en) | Electromagnetic wave detector and electromagnetic wave detector assembly | |
| WO2023181593A1 (en) | Electromagnetic wave detector, electromagnetic wave detector array, and image sensor | |
| JP3922772B2 (en) | Light receiving element, method for manufacturing ultraviolet light receiving element, and light receiving element | |
| JP2023132638A (en) | Light receiving element and manufacturing method thereof | |
| JP2000323742A (en) | Infrared ray detecting device | |
| JP5731869B2 (en) | Semiconductor UV receiver | |
| CN117747685A (en) | Long wave infrared detector for improving quantum efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |