CN117238993A - Novel high-reflection black backboard base film, preparation method and application thereof - Google Patents
Novel high-reflection black backboard base film, preparation method and application thereof Download PDFInfo
- Publication number
- CN117238993A CN117238993A CN202311169945.1A CN202311169945A CN117238993A CN 117238993 A CN117238993 A CN 117238993A CN 202311169945 A CN202311169945 A CN 202311169945A CN 117238993 A CN117238993 A CN 117238993A
- Authority
- CN
- China
- Prior art keywords
- reflection
- parts
- base film
- copper
- black
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- RTOOMIOWOJBNTK-UHFFFAOYSA-K sodium;zinc;phosphate Chemical compound [Na+].[Zn+2].[O-]P([O-])([O-])=O RTOOMIOWOJBNTK-UHFFFAOYSA-K 0.000 claims abstract description 46
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000010410 layer Substances 0.000 claims abstract description 40
- 238000002310 reflectometry Methods 0.000 claims abstract description 30
- 239000002994 raw material Substances 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 20
- 239000011324 bead Substances 0.000 claims abstract description 20
- 239000012792 core layer Substances 0.000 claims abstract description 11
- 229920000098 polyolefin Polymers 0.000 claims abstract description 10
- 239000004925 Acrylic resin Substances 0.000 claims abstract description 6
- 229920000178 Acrylic resin Polymers 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 239000004594 Masterbatch (MB) Substances 0.000 claims description 45
- 239000011651 chromium Substances 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 11
- 238000005303 weighing Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000005022 packaging material Substances 0.000 claims description 6
- 238000001354 calcination Methods 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 4
- 239000001488 sodium phosphate Substances 0.000 claims description 4
- 238000010532 solid phase synthesis reaction Methods 0.000 claims description 4
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 4
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 3
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 241000269913 Pseudopleuronectes americanus Species 0.000 claims 3
- 239000010949 copper Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- 239000005038 ethylene vinyl acetate Substances 0.000 description 8
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 6
- HEQBUZNAOJCRSL-UHFFFAOYSA-N iron(ii) chromite Chemical compound [O-2].[O-2].[O-2].[Cr+3].[Fe+3] HEQBUZNAOJCRSL-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000032683 aging Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000006750 UV protection Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005090 crystal field Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- QUAMTGJKVDWJEQ-UHFFFAOYSA-N octabenzone Chemical compound OC1=CC(OCCCCCCCC)=CC=C1C(=O)C1=CC=CC=C1 QUAMTGJKVDWJEQ-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- CJWNFAKWHDOUKL-UHFFFAOYSA-N 2-(2-phenylpropan-2-yl)phenol Chemical compound C=1C=CC=C(O)C=1C(C)(C)C1=CC=CC=C1 CJWNFAKWHDOUKL-UHFFFAOYSA-N 0.000 description 1
- YEXOWHQZWLCHHD-UHFFFAOYSA-N 3,5-ditert-butyl-4-hydroxybenzoic acid Chemical compound CC(C)(C)C1=CC(C(O)=O)=CC(C(C)(C)C)=C1O YEXOWHQZWLCHHD-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- XXLJGBGJDROPKW-UHFFFAOYSA-N antimony;oxotin Chemical compound [Sb].[Sn]=O XXLJGBGJDROPKW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical group O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229940068886 polyethylene glycol 300 Drugs 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The application discloses a novel high-reflection black backboard base film, a preparation method and application thereof, wherein the novel high-reflection black backboard base film comprises a first high-reflection layer, a second high-reflection layer and a high-reflection core layer, and the first high-reflection layer comprises the following raw materials in parts by mass: acrylic resin, copper-chromium black doped zinc sodium phosphate and a silane coupling agent, wherein the addition amount of the copper-chromium black doped zinc sodium phosphate is 1% -5% of the total mass of the first high-reflectivity layer raw material; the second high-reflection layer comprises the following raw materials in parts by mass: 91-97 parts of polyolefin, 1-2 parts of glass beads, 1-5 parts of silane coupling agent and 1-2 parts of ultraviolet resistant agent; the high-reflection core layer comprises the following raw materials in parts by mass: 70-84 parts of EVA, 15-25 parts of polyolefin and 1-5 parts of silane coupling agent. The novel high-reflection black backboard base film has excellent infrared reflectivity and weather resistance.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a novel high-reflection black backboard base film, a preparation method and application thereof.
Background
The photovoltaic cell assembly is a device for directly converting light energy into electric energy through a photoelectric effect or a photochemical effect, wherein the photovoltaic backboard is the outermost layer structure of the photovoltaic cell assembly, and plays roles in insulation and protection of the photovoltaic assembly. In recent years, the conversion efficiency of solar cells is continuously improved, and it is more and more important to improve the conversion efficiency of the components, wherein improving the reflectivity of the back surface of the components is an important measure. The improvement of the reflectivity of the back surface of the component can be realized by using white EVA, but a large amount of white filler is needed to be added into the white EVA, the white filler can migrate to pollute the battery piece, the cost is increased, the ageing resistance of the EVA is reduced, and the service life of the component is shortened.
As conversion efficiency increases and component power increases, the heat dissipation of the component increases. The vast majority of current power stations use silicon solar cells, which are sensitive to temperature, and the conversion efficiency drops sharply with increasing temperature. Therefore, efficient conduction of heat generated by silicon solar cells is an urgent problem to be solved by high power components.
The infrared reflective filler added into the photovoltaic back sheet film comprises materials such as indium tin oxide, tin antimony oxide, carbon fiber and the like, and has high price and poor economy, so that large-scale production is difficult to realize, and the photovoltaic back sheet base film with economy and infrared reflectivity is required.
Disclosure of Invention
The application aims to provide a photovoltaic backboard base film with good infrared reflectivity and good economic adaptability.
The application further aims to provide a preparation method of the photovoltaic backboard base film, which is easy to prepare and high in applicability.
In order to achieve the above purpose, the application adopts the following technical scheme: the novel high-reflection black backboard base film comprises a first high-reflection layer, a second high-reflection layer and a high-reflection core layer, wherein the first high-reflection layer comprises the following raw materials in parts by mass: acrylic resin, copper-chromium black doped zinc sodium phosphate and a silane coupling agent, wherein the addition amount of the copper-chromium black doped zinc sodium phosphate is 1% -5% of the total mass of the first high-reflectivity layer raw material; the second high-reflection layer comprises the following raw materials in parts by mass: 91-97 parts of polyolefin, 1-2 parts of glass beads, 1-5 parts of silane coupling agent and 1-2 parts of ultraviolet resistant agent; the high-reflection core layer comprises the following raw materials in parts by mass: 70-84 parts of EVA, 15-25 parts of polyolefin and 1-5 parts of silane coupling agent.
Preferably, the doping amount of the copper-chromium black in the sodium phosphate doped with the copper-chromium black is 1% -5%.
As another preferable, the doping amount of copper chrome black in the copper chrome black doped sodium phosphate is 2%.
As another preferred, the glass beads are one or a combination of more of zinc-plated glass beads, silver-plated glass beads, or copper-plated glass beads.
As another preference, the silane coupling agent is one or a combination of more of vinyltriethoxysilane, vinyltrimethoxysilane or vinyltris (β -methoxyethoxy) silane.
The application provides a preparation method of a novel high-reflection black backboard base film, which comprises an S1 master batch step and an S2 coextrusion step, wherein the S1 master batch step comprises the following steps: s110: preparing the copper-chromium black doped zinc sodium phosphate; s120: adding the preparation raw materials of the first high-reflection layer, the second high-reflection layer and the high-reflection core layer into a granulator to prepare a first master batch, a second master batch and a third master batch; the step of S2 coextrusion is as follows: adding the first master batch, the second master batch and the third master batch into an extruder, and performing coextrusion to obtain the novel high-black-reflection back plate base film.
As another preferable aspect, the solid phase method is used in the step S110 to prepare the copper-chromium black doped zinc sodium phosphate, specifically: weighing Na 3 PO 4 、ZnO、(NH 4 ) 2 HPO 4 、CuO、Cr 2 O 3 And respectively grinding, uniformly mixing, placing into a muffle furnace, calcining for 4 hours at 900 ℃, naturally cooling, and grinding to obtain the copper-chromium black doped zinc sodium phosphate.
As another preferred, the S2 coextrusion step is specifically: and respectively conveying the first master batch, the second master batch and the third master batch to a first extruder, a second extruder and a third extruder of a back plate coextrusion production line, melting and plasticizing, and extruding through a common rectangular die to obtain a sheet melt, and cooling, shaping, rolling and cutting the sheet melt to obtain the novel high-blackening back plate base film.
The application provides a photovoltaic cell, which sequentially comprises a photovoltaic backboard, a packaging material, a cell piece, a packaging material and packaging glass from bottom to top, wherein the photovoltaic backboard comprises the novel high-reflection black backboard base film or the novel high-reflection black backboard base film prepared by the preparation method.
Compared with the prior art, the application has the beneficial effects that:
(1) The photovoltaic backboard base film has good infrared reflectivity, and the reflectivity exceeds 80% in 780-1100 nm wave band, so that the rapid temperature rise of a photovoltaic module is avoided;
(2) The photovoltaic backboard base film has good weather resistance, good damp and heat ageing resistance, low water vapor transmittance and capability of preventing water vapor from entering the battery piece through the backboard, so that the service life of the photovoltaic module can be prolonged;
(3) The photovoltaic back plate base film provided by the application is a material with low cost and convenient preparation, and the preparation method is simple, is suitable for most production lines of the photovoltaic back plate base film, and has better economic adaptability.
Detailed Description
The present application will be further described with reference to the following specific embodiments, and it should be noted that, on the premise of no conflict, new embodiments may be formed by any combination of the embodiments or technical features described below.
The terms "comprises" and "comprising," along with any variations thereof, in the description and claims, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The application provides a novel high-reflection black backboard base film which comprises a first high-reflection layer, a second high-reflection layer and a high-reflection core layer, wherein the preparation raw materials of the first high-reflection layer comprise: acrylic resin, copper chromium black doped zinc sodium phosphate and a silane coupling agent; the preparation raw materials of the second high-reflection layer comprise: polyolefin, glass beads, a silane coupling agent and an ultraviolet resistance agent; the preparation raw materials of the high-reflection core layer comprise: EVA, polyolefin, and silane coupling agents.
Sodium zinc phosphate is a compound with a porous structure, and is shown in NaZnPO 4 In the crystal structure, zn and P are surrounded by 4O to respectively form [ ZnO ] 4 ]、[PO 4 ]Tetrahedron, through sharing O atom, the two tetrahedrons form a three-dimensional annular grid structure, na + Located at [ ZnPO 4 ] - In the six-membered ring crystal cavity formed by tetrahedra, the molecular vibration is limited to a certain extent like a zeolite structure, so that the absorption of the molecules to light is small when the sunlight irradiates, and the infrared reflection performance is excellent.
In the research of zinc sodium phosphate in the prior art, transition metal elements are added into zinc sodium phosphate to carry out doping modification on the zinc sodium phosphate, d orbits and f orbits of transition element ions in a crystal field are subjected to crystal field splitting to form orbit groups with different energy levels, and energy between the d orbits and the f orbits corresponds to a certain wave band of visible light, so that electrons are excited to transit between the inequivalent d orbits or between the f orbits when sunlight passes through the crystal, and the visible light with a certain specific wavelength is absorbed, so that the crystal presents a certain color.
In addition, the infrared reflectivity of the zinc sodium phosphate can be enhanced to a certain extent by adding a metal element or a transition metal element to the zinc sodium phosphate. NaZnPO 4 The molecules have a ring grid structure, when electromagnetic waves act, the molecular vibration is limited, the photon absorption capacity is low, the infrared reflection performance is excellent, and the doping of metal elements can lead NaZnPO to be formed 4 Is more stable in structure, zn (PO) 4 ) 2 Reduced relative content, doped phase NaZn (Cu) PO 4 The increase in relative content is highly likely to increase scattering of the sample, resulting in an improvement in infrared reflection properties.
Preferably, the doping amount of copper chrome black in the zinc sodium phosphate is 1% -5%. The infrared reflectivity of the material has the tendency of rising and then falling along with the increase of the content of copper chrome black in the zinc sodium phosphate. Presumably, the reason is that the relative content of the main byproduct is changed due to the excessive doping of the copper chrome black, the lattice distortion of the zinc sodium phosphate is aggravated due to excessive doping elements, the defect concentration is improved, the electromagnetic wave absorption is enhanced, and meanwhile, the absorption rate of a sample is increased due to the increase of impurities such as the byproduct and the like, so that the reflection performance is reduced.
Preferably, the addition amount of the copper-chromium black doped zinc sodium phosphate is 1-5% of the total mass of the first high-reflection layer.
Preferably, a silane coupling agent is added to the first high-reflection layer and the second high-reflection layer to improve the dispersibility of the inorganic particles. The silane coupling agent is preferably one or a combination of vinyl triethoxysilane, vinyl trimethoxysilane or vinyl tris (beta-methoxyethoxy) silane.
Preferably, the glass bead is added in the second high-reflection layer, and specifically, the glass bead can be one of galvanized glass bead, silver-plated glass bead or aluminized glass bead. The glass beads are low in price, resistant to high temperature, easy to disperse in organic components, good in reflectivity, capable of reflecting penetrating light to the battery piece and improving the power generation efficiency of the photovoltaic module.
Preferably, the second highly reflective layer has added thereto an anti-uv agent comprising one or more of 2-hydroxy-4-n-octoxybenzophenone, 2'- (2' -hydroxy-3 '-tert-butyl-5' -methylphenyl) -5-chlorobenzotriazole, 2'- (2' -hydroxy-5 '-tert-octylphenyl) -benzotriazole, 2- (2H-benzotriazole-2) -4, 6-bis (1-methyl-1-phenylethyl) phenol, 2' -methylenebis (4-tert-octyl-6-benzotriazole phenol), 3- [3- (2-H-benzotriazole-2-yl) -4-hydroxy-5-tert-butylphenyl ] -propionic acid-polyethylene glycol 300 ester, and n-sixteen 3, 5-di-tert-butyl-4-hydroxybenzoate.
The photovoltaic backboard base film is suitable for most photovoltaic module setting scenes, and can reflect infrared light to avoid the temperature rise of the photovoltaic module, so that the photovoltaic backboard base film is applied to the preparation of black photovoltaic backboard.
According to the photovoltaic backboard base film disclosed by the application, copper-chromium black doped zinc sodium phosphate is creatively added into the first high-reflection layer, so that the first high-reflection layer has higher infrared reflectivity and better weather resistance.
The photovoltaic backboard base film disclosed by the application is made of cheap and convenient-to-prepare materials, and has good economic adaptability.
The application provides a preparation method of a novel high-reflection black backboard base film, which comprises an S1 master batch preparation step and an S2 coextrusion step, wherein the S1 master batch preparation step comprises the following steps:
s110: preparing copper-chromium black doped zinc sodium phosphate;
s120: adding the preparation raw materials of the first high-reflection layer, the second high-reflection layer and the high-reflection core layer into a granulator to prepare a first master batch, a second master batch and a third master batch;
s2, coextrusion step: and adding the first master batch, the second master batch and the third master batch into an extruder, and co-extruding to obtain the photovoltaic backboard base film.
The step of S2 coextrusion specifically comprises the following steps: the first master batch, the second master batch and the third master batch are respectively sent to a first extruder, a second extruder and a third extruder of a back plate coextrusion production line, melted and plasticized and extruded by a common rectangular die to obtain a sheet melt, and the sheet melt is cooled, shaped, rolled and cut to obtain the photovoltaic back plate base film.
Preferably, the solid phase method is used for preparing copper-chromium black doped zinc sodium phosphate, and the specific steps are as follows: weighing Na 3 PO 4 、ZnO、(NH 4 ) 2 HPO 4 、CuO、Cr 2 O 3 Grinding respectively, mixing uniformly, placing into a muffle furnace, calcining at 900 ℃ for 4 hours, naturally cooling, and grinding to obtain 1% copper-chromium black doped zinc sodium phosphate.
The preparation method disclosed by the application is simple in preparation steps and strong in universality, is suitable for most of current photovoltaic backboard base film production lines, does not need additional equipment, and saves cost.
The application provides a photovoltaic cell, which sequentially comprises a photovoltaic backboard, a packaging material, a cell piece, a packaging material and packaging glass from bottom to top, wherein the photovoltaic backboard comprises the photovoltaic backboard base film or the photovoltaic backboard base film prepared by the preparation method of the photovoltaic backboard base film.
Example 1
A novel high-reflection black backboard base film is prepared by the following steps:
s100: preparing master batches;
s110: preparing copper-chromium black doped zinc sodium phosphate by adopting a solid phase method, and weighing Na 3 PO 4 2.466g、ZnO 1.190g、(NH 4 ) 2 HPO 4 1.293g、CuO 0.017g、Cr 2 O 3 0.034g, respectively grinding, mixing, placing into a muffle furnace, calcining at 900deg.C for 4 hr, naturally cooling, and grindingGrinding to obtain 1% copper-chromium black doped zinc sodium phosphate.
S121: 94g of acrylic resin, 1g of 1% copper-chromium black doped zinc sodium phosphate and 5g of silane coupling agent are added into a granulator to obtain a first master batch;
s122: adding 91g of polyolefin, 2g of glass beads, 5g of silane coupling agent and 2g of ultraviolet resistance agent into a granulator to obtain a second master batch;
s123: adding 80g EVA, 15g polyolefin and 5g silane coupling agent into a granulator to obtain a third master batch;
s2: the first master batch, the second master batch and the third master batch are respectively sent to a first extruder, a second extruder and a third extruder of a back plate coextrusion production line, are extruded through a common rectangular die after being melted and plasticized to obtain a sheet-shaped melt, and the sheet-shaped melt is cooled, shaped, rolled and cut to obtain the photovoltaic back plate base film.
Example 2
In the step S110, 2% copper-chromium black doped zinc sodium phosphate is prepared, and the proportion of the raw materials is adjusted as follows: weighing Na 3 PO 4 2.441g、ZnO 1.178g、(NH 4 ) 2 HPO 4 1.280g、CuO 0.034g、Cr 2 O 3 0.067g。
Other preparation steps were identical to those of example 1.
Example 3
In the step S110, 3% copper-chromium black doped zinc sodium phosphate is prepared, and the proportion of the raw materials is adjusted as follows: weighing Na 3 PO 4 2.416g、ZnO 1.166g、(NH 4 ) 2 HPO 4 1.267g、CuO 0.051g、Cr 2 O 3 0.1g。
Other preparation steps were identical to those of example 1.
Example 4
In the step S110, 4% copper-chromium black doped zinc sodium phosphate is prepared, and the proportion of the raw materials is adjusted as follows: weighing Na 3 PO 4 2.391g、ZnO 1.154g、(NH 4 ) 2 HPO 4 1.254g、CuO 0.068g、Cr 2 O 3 0.133g。
Other preparation steps were identical to those of example 1.
Example 5
In the step S110, 5% copper-chromium black doped zinc sodium phosphate is prepared, and the proportion of the raw materials is adjusted as follows: weighing Na 3 PO 4 2.366g、ZnO 1.142g、(NH 4 ) 2 HPO 4 1.241g、CuO 0.085g、Cr 2 O 3 0.166g。
Other preparation steps were identical to those of example 1.
Comparative example 1
In the step S110, preparing zinc sodium phosphate without doping copper chrome black, and adjusting the raw material ratio to be: weighing Na 3 PO 4 2.491g、ZnO 1.202g、(NH 4 ) 2 HPO 4 1.307g。
Other preparation steps were identical to those of example 1.
Comparative example 2
The first highly reflective layer was prepared without adding zinc sodium phosphate, and in step S121, 95g of acrylic resin and 5g of silane coupling agent were added to a granulator to obtain a fourth master batch. In the steps S122 and S123, a second master batch and a third master batch were prepared in the same manner as in example 1.
S2: and respectively adding the fourth master batch, the second master batch and the third master batch into an extruder, and performing coextrusion to obtain the photovoltaic backboard base film.
Other preparation steps were identical to those of example 1.
Comparative example 3
In the step S110, 1% copper doped zinc sodium phosphate is prepared, and the raw material ratio is adjusted as follows: weighing Na 3 PO 4 2.466g、ZnO 1.190g、(NH 4 ) 2 HPO 4 1.293g、CuO 0.051g。
Other preparation steps were identical to those of example 1.
Comparative example 4
In the step S110, 1% chromium doped zinc sodium phosphate is prepared, and the raw material ratio is adjusted as follows: weighing Na 3 PO 4 2.466g、ZnO 1.190g、(NH 4 ) 2 HPO 4 1.293g、Cr 2 O 3 0.051g。
Other preparation steps were identical to those of example 1.
Performance testing
1. Reflectance test
And detecting infrared light reflectivity of 780-1100 nm by adopting an ultraviolet spectrophotometer.
2. Constant humidity and heat aging resistance test
Test methods refer to standard GB/T29848 ethylene-vinyl acetate copolymer (EVA) adhesive film for packaging photovoltaic modules. Test conditions: +85 ℃, 85% relative humidity.
3. Water vapor permeability test
The temperature was measured at 38℃and 100% relative humidity using an infrared sensor.
The photovoltaic backsheet base films of each example and each comparative example were subjected to performance testing, and the test results are recorded in table 1 below.
Table 1 results of performance testing of examples and comparative examples
From the reflectivity test results in table 1, it is known that the infrared reflectivity of the photovoltaic back sheet base film can be significantly improved by adding zinc sodium phosphate into the first high-reflectivity layer, and the zinc sodium phosphate has good reflectivity in the 780-1100 nm band. The infrared reflectivity of the material can be improved by doping copper element and chromium element into zinc sodium phosphate, but the infrared reflection effect of copper-chromium black is better than that of copper or chromium which is one element independently added.
Under the condition that the dosage of the copper-chromium black doped zinc sodium phosphate in the first high-reflection layer is consistent, the doping quantity of the copper-chromium black has a certain influence on the infrared reflectivity of the photovoltaic backboard base film. Examples 1-5 set the amounts of copper chromium black doped zinc sodium phosphate to 1%, 2%, 3%, 4% and 5%, and the infrared reflectance of the first highly reflective layer showed a tendency to rise first and then decrease as the copper chromium black content increases. Wherein when the amount of the copper-chromium black doped zinc sodium phosphate is 2%, the best infrared reflectivity can be obtained, and the reflectivity in the wave band range of 780-1100 nm exceeds 80%.
As the doping amount of the copper-chromium black increases from 2% to 5%, the infrared reflectivity gradually decreases. This is probably because with Cu 2+ And Cr (V) 3+ The doping amount of the (C) is increased, the substitution occupation of the doping ions in the crystal is selective, so that the change of the atomic weight of certain positions is caused, the content of main byproducts of the product is changed due to the change of the doping amount, and the infrared reflectivity of the product is changed.
In the test result of the middle layer reflectivity, a small amount of glass beads are added in the second high-reflectivity layer, so that the high-reflectivity solar photovoltaic cell has a certain reflectivity, and can reflect the penetrated light into the cell, so that the conversion efficiency of the photovoltaic cell is improved.
The photovoltaic backboard base film prepared by doping copper-chromium black with zinc sodium phosphate has good damp-heat aging resistance and low water vapor transmittance, meets the long-term outdoor use condition of the photovoltaic backboard, and prolongs the service life of the photovoltaic module.
The photovoltaic backboard base film prepared by the application can be applied to various photovoltaic backboard, meets the requirements of the black photovoltaic backboard on the aesthetic property, has the reflectivity of more than 80% in 780-1100 nm wave band, and avoids the reduction of the power generation efficiency caused by the aggregation of solar radiation energy.
The photovoltaic backboard base film prepared by the application creatively uses the copper-chromium black doped zinc sodium phosphate as the addition amount of the first high-reflection layer, thereby realizing the improvement of infrared reflectivity; the preparation method is simple, and is suitable for most of photovoltaic backboard base film production lines at present, and no additional production equipment is needed.
The photovoltaic backboard base film disclosed by the application has good weather resistance, good damp and heat ageing resistance, low water vapor transmittance and capability of preventing water vapor from entering the battery piece through the backboard, and the service life of the photovoltaic module can be prolonged.
The foregoing has outlined the basic principles, features, and advantages of the present application. It will be understood by those skilled in the art that the present application is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present application, and various changes and modifications may be made therein without departing from the spirit and scope of the application, which is defined by the appended claims. The scope of the application is defined by the appended claims and equivalents thereof.
Claims (9)
1. The novel high-reflection black backboard base film is characterized by comprising a first high-reflection layer, a second high-reflection layer and a high-reflection core layer, wherein the first high-reflection layer comprises the following raw materials in parts by mass: acrylic resin, copper-chromium black doped zinc sodium phosphate and a silane coupling agent, wherein the addition amount of the copper-chromium black doped zinc sodium phosphate is 1% -5% of the total mass of the first high-reflectivity layer raw material; the second high-reflection layer comprises the following raw materials in parts by mass: 91-97 parts of polyolefin, 1-2 parts of glass beads, 1-5 parts of silane coupling agent and 1-2 parts of ultraviolet resistant agent; the high-reflection core layer comprises the following raw materials in parts by mass: 70-84 parts of EVA, 15-25 parts of polyolefin and 1-5 parts of silane coupling agent.
2. The novel high-reflection black back plate base film according to claim 1, wherein the doping amount of copper-chromium black in the copper-chromium black doped sodium phosphate is 1% -5%.
3. The novel high-reflection black back plate base film according to claim 2, wherein the doping amount of copper-chromium black in the copper-chromium black doped sodium phosphate is 2%.
4. The novel high-reflection black back sheet base film according to claim 1, wherein the glass beads are one or a combination of more of zinc-plated glass beads, silver-plated glass beads, or copper-plated glass beads.
5. The novel high back-sheet base film of claim 1, wherein the silane coupling agent is one or more of vinyltriethoxysilane, vinyltrimethoxysilane, or vinyltris (β -methoxyethoxy) silane.
6. The method for preparing the novel high-reflection black backboard base film according to any one of claims 1 to 5, which is characterized by comprising an S1 master batch step and an S2 coextrusion step, wherein the S1 master batch step comprises the following steps:
s110: preparing the copper-chromium black doped zinc sodium phosphate;
s120: adding the preparation raw materials of the first high-reflection layer, the second high-reflection layer and the high-reflection core layer into a granulator to prepare a first master batch, a second master batch and a third master batch;
the step of S2 coextrusion is as follows: adding the first master batch, the second master batch and the third master batch into an extruder, and performing coextrusion to obtain the novel high-black-reflection back plate base film.
7. The preparation method of claim 6, wherein the solid phase method is used in step S110 to prepare the copper-chromium black doped zinc sodium phosphate, specifically: weighing Na 3 PO 4 、ZnO、(NH 4 ) 2 HPO 4 、CuO、Cr 2 O 3 And respectively grinding, uniformly mixing, placing into a muffle furnace, calcining for 4 hours at 900 ℃, naturally cooling, and grinding to obtain the copper-chromium black doped zinc sodium phosphate.
8. The method of claim 6, wherein the step of S2 coextrusion comprises: and respectively conveying the first master batch, the second master batch and the third master batch to a first extruder, a second extruder and a third extruder of a back plate coextrusion production line, melting and plasticizing, and extruding through a common rectangular die to obtain a sheet melt, and cooling, shaping, rolling and cutting the sheet melt to obtain the novel high-blackening back plate base film.
9. The photovoltaic cell is characterized by sequentially comprising a photovoltaic backboard, a packaging material, a cell piece, a packaging material and packaging glass from bottom to top, wherein the photovoltaic backboard comprises the novel high-reflection black backboard base film according to any one of claims 1 to 5 or comprises the novel high-reflection black backboard base film prepared by the preparation method according to any one of claims 6 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311169945.1A CN117238993A (en) | 2023-09-12 | 2023-09-12 | Novel high-reflection black backboard base film, preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311169945.1A CN117238993A (en) | 2023-09-12 | 2023-09-12 | Novel high-reflection black backboard base film, preparation method and application thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN117238993A true CN117238993A (en) | 2023-12-15 |
Family
ID=89087266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311169945.1A Pending CN117238993A (en) | 2023-09-12 | 2023-09-12 | Novel high-reflection black backboard base film, preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN117238993A (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102040210A (en) * | 2010-10-21 | 2011-05-04 | 华南理工大学 | High-ultraviolet high-infrared reflective material and preparation method thereof |
| CN103965675A (en) * | 2014-04-30 | 2014-08-06 | 中国船舶重工集团公司第七二五研究所 | High infrared reflection deep color material and preparing method thereof |
| CN105273002A (en) * | 2014-07-09 | 2016-01-27 | 北京建筑材料科学研究总院有限公司 | Preparation method for amorphous zinc dibenzyl phosphate complex |
| US20190359875A1 (en) * | 2017-03-02 | 2019-11-28 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Alumina-based thermally conductive oxide and method for producing same |
| US20200313014A1 (en) * | 2017-09-27 | 2020-10-01 | ZHONGTIAN PHOTOVOLTAIC MATERIALS Co.,Ltd. | Preparation method of solar cell backsheet film with high reflectivity |
| CN112011123A (en) * | 2020-07-29 | 2020-12-01 | 青岛国恩科技股份有限公司 | Low-heat-storage-degree polypropylene composite material for automotive upholstery and preparation method thereof |
| CN112848578A (en) * | 2021-01-06 | 2021-05-28 | 浙江中聚材料有限公司 | High-reflectivity solar photovoltaic back plate and preparation method thereof |
| US20210262130A1 (en) * | 2018-07-20 | 2021-08-26 | Groz-Beckert Kg | Non-shedding hybrid nonwovens and method of producing same |
| CN113308206A (en) * | 2021-06-11 | 2021-08-27 | 江苏鹿山新材料有限公司 | High-reflection black adhesive film and preparation method and application thereof |
| CN113943536A (en) * | 2021-10-19 | 2022-01-18 | 常州斯威克光伏新材料有限公司 | Black infrared reflection type packaging adhesive film and preparation method thereof |
| CN114149769A (en) * | 2021-12-29 | 2022-03-08 | 苏州赛伍应用技术股份有限公司 | High-reflection black adhesive film and preparation method and application thereof |
-
2023
- 2023-09-12 CN CN202311169945.1A patent/CN117238993A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102040210A (en) * | 2010-10-21 | 2011-05-04 | 华南理工大学 | High-ultraviolet high-infrared reflective material and preparation method thereof |
| CN103965675A (en) * | 2014-04-30 | 2014-08-06 | 中国船舶重工集团公司第七二五研究所 | High infrared reflection deep color material and preparing method thereof |
| CN105273002A (en) * | 2014-07-09 | 2016-01-27 | 北京建筑材料科学研究总院有限公司 | Preparation method for amorphous zinc dibenzyl phosphate complex |
| US20190359875A1 (en) * | 2017-03-02 | 2019-11-28 | Dainichiseika Color & Chemicals Mfg. Co., Ltd. | Alumina-based thermally conductive oxide and method for producing same |
| US20200313014A1 (en) * | 2017-09-27 | 2020-10-01 | ZHONGTIAN PHOTOVOLTAIC MATERIALS Co.,Ltd. | Preparation method of solar cell backsheet film with high reflectivity |
| US20210262130A1 (en) * | 2018-07-20 | 2021-08-26 | Groz-Beckert Kg | Non-shedding hybrid nonwovens and method of producing same |
| CN112011123A (en) * | 2020-07-29 | 2020-12-01 | 青岛国恩科技股份有限公司 | Low-heat-storage-degree polypropylene composite material for automotive upholstery and preparation method thereof |
| CN112848578A (en) * | 2021-01-06 | 2021-05-28 | 浙江中聚材料有限公司 | High-reflectivity solar photovoltaic back plate and preparation method thereof |
| CN113308206A (en) * | 2021-06-11 | 2021-08-27 | 江苏鹿山新材料有限公司 | High-reflection black adhesive film and preparation method and application thereof |
| CN113943536A (en) * | 2021-10-19 | 2022-01-18 | 常州斯威克光伏新材料有限公司 | Black infrared reflection type packaging adhesive film and preparation method thereof |
| CN114149769A (en) * | 2021-12-29 | 2022-03-08 | 苏州赛伍应用技术股份有限公司 | High-reflection black adhesive film and preparation method and application thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2021238116A1 (en) | Anti-pid poe adhesive film specifically for photovoltaic double-glass assembly packaging and preparation method therefor | |
| TW201304167A (en) | Physical tempered glass, solar cover plate, solar backsheet and solar panel | |
| CN111909628A (en) | Enhanced photovoltaic packaging adhesive film and preparation method thereof | |
| CN102766412A (en) | Novel photovoltaic encapsulation glue film, as well as preparation method and using method thereof | |
| CN114854331A (en) | Ultraviolet cut-off type EVA photovoltaic adhesive film, preparation method thereof and photovoltaic module | |
| WO2013191961A1 (en) | Backsheet for a photovoltaic cell module and photovoltaic cell module including same | |
| EP3933936A1 (en) | Composite encapsulating material and photovoltaic module including the same | |
| CN117238993A (en) | Novel high-reflection black backboard base film, preparation method and application thereof | |
| EP3762973B1 (en) | Photovoltaic module and encapsulant composition having improved resistance to potential induced degradation | |
| EP2483933A2 (en) | Encapsulant material for photovoltaic modules | |
| JP2011077089A (en) | Backside sealing material for solar cell, and solar cell module | |
| JP5378936B2 (en) | Solar cell sealing material, solar cell sealing sheet and solar cell using the same | |
| CN111087940B (en) | Light guide composite packaging adhesive film and preparation method and application thereof | |
| KR20120075000A (en) | Resin compositions for encapsulant material of photovoltaic modules including metal nano powder | |
| CN114989745A (en) | Photovoltaic packaging adhesive film with high transmittance | |
| CN109437584B (en) | Photovoltaic glass reflecting film with ultrahigh visible light reflectivity and preparation method thereof | |
| CN114656897B (en) | Ethylene-vinyl acetate copolymer packaging adhesive film and preparation method and application thereof | |
| CN102643037A (en) | Method for preparing functionalized EVA (Ethylene Vinyl Acetate) thin film | |
| CN115895100B (en) | Gain casting film, preparation method and application thereof | |
| CN117866544A (en) | PID-resistant EVA packaging adhesive film and preparation method and application thereof | |
| CN215947159U (en) | Packaging adhesive film | |
| CN118027854A (en) | PVB (polyvinyl butyral) adhesive film for light-converting type photovoltaic packaging and preparation method and application thereof | |
| CN112951936B (en) | High-reflectivity solar cell backboard and preparation process thereof | |
| CN115923212B (en) | Preparation method of casting film, casting film prepared by method and application of casting film | |
| CN111518486B (en) | Magnetic conductive reactance PID (proportion integration differentiation) adhesive film and solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |